JP3913250B2 - Electron beam exposure apparatus and exposure method therefor - Google Patents

Description

  The present invention relates to an electron beam exposure apparatus and an exposure method therefor, and more particularly to an electron beam exposure apparatus and pattern exposure method that perform pattern drawing using a plurality of electron beams for wafer direct drawing or mask / reticle exposure.

  The electron beam exposure apparatus includes a point beam type that uses a beam in the form of a spot, a variable rectangular beam type that uses a variable-size rectangular cross section, and a stencil mask type apparatus that uses a stencil to obtain a desired cross-sectional shape. is there.

  The point beam type electron beam exposure apparatus has low throughput and is used only for research and development. In the variable rectangular beam type electron beam exposure apparatus, the throughput is one to two orders of magnitude higher than that of the point type. However, in the case of exposing a pattern in which a fine pattern of about 0.1 μm is packed with a high degree of integration, it is still a point of throughput. There are many problems. On the other hand, a stencil mask type electron beam exposure apparatus uses a stencil mask in which a plurality of repetitive pattern transmission holes are formed in a portion corresponding to a variable rectangular aperture. Therefore, the stencil mask type electron beam exposure apparatus has a great merit in exposing a repeated pattern, and the throughput is improved as compared with the variable rectangular beam type.

  FIG. 2 shows an outline of an electron beam exposure apparatus provided with a stencil mask. The electron beam from the electron gun 501 is irradiated to the first aperture 502 that defines the electron beam irradiation region of the stencil mask. The illumination electron beam defined by the first aperture irradiates the stencil mask on the second aperture 504 via the projection electron lens 503, and the electron beam from the repetitive pattern transmission hole formed in the stencil mask is reduced by electron optics. A system 505 projects the reduced image onto the wafer 506. Further, the image of the pattern transmission holes is repeatedly moved on the wafer by the deflector 507 and sequentially exposed.

  The stencil mask type can expose a repeated pattern at a time, and can increase the exposure speed. However, although the stencil mask type has a plurality of pattern transmission holes as shown in FIG. 3, the pattern must be formed in advance as a stencil mask in accordance with the exposure pattern.

  In addition, because of the space charge effect and the aberration of the reduced electron optical system, the exposure area that can be exposed at one time is limited, so for semiconductor circuits that require a large number of transfer patterns that do not fit in one stencil mask, Since it is necessary to prepare a plurality of stencil masks and use them one by one, and it takes time to replace the mask, so the throughput is significantly reduced.

  In addition, when there are patterns with different sizes in the stencil mask or when there is one pattern in which patterns with different sizes are combined, the exposure pattern blur due to the space charge effect varies depending on the size of the pattern. . Even if the blur is corrected by refocusing, the refocus amount varies depending on the size of the pattern, and the above-described pattern cannot be used as a stencil mask pattern.

  An object of the present invention is, for example, to provide an electron beam exposure method and apparatus advantageous in improving throughput.

The electron beam exposure method of the present invention relates to an exposure method by an electron beam exposure apparatus that exposes an exposed surface with a plurality of electron beams, wherein the exposed surface is exposed with the plurality of electron beams, respectively. A plurality of scanning fields; each of the plurality of scanning fields includes a plurality of exposure positions arranged at the same interval; and the electron beam exposure apparatus moves the plurality of electron beams on the surface to be exposed. A plurality of electrons for controlling whether or not to expose each exposure position in each scanning field according to an exposure pattern to be formed on the surface to be exposed, and a deflector that deflects to move by an amount And a blanking array for individually controlling whether to transmit or block the beam. In the electron beam exposure method, the blanking array should transmit at least one of the plurality of electron beams when the deflector moves the plurality of electron beams from one exposure position to the next exposure position. The plurality of electron beams are moved to an exposure position, and the exposure positions to be blocked by the blanking array are all skipped .

According to a preferred embodiment of the present invention, the electron beam exposure method, wherein according to the pitch of repeated patterns included in the exposure pattern, the interval of the plurality of electron beams is preferably set.

According to a preferred embodiment of the present invention, that the spacing of the plurality of scanning fields is set to an integral multiple of the pitch of repeated patterns included in said exposure pattern is preferred.

The electron beam exposure apparatus according to the present invention relates to an electron beam exposure apparatus that exposes an exposed surface with a plurality of electron beams, wherein the exposed surface is exposed to a plurality of scans respectively exposed with the plurality of electron beams. Each of the plurality of scanning fields includes a plurality of exposure positions arranged at the same interval. The electron beam exposure apparatus includes: a deflector that deflects the plurality of electron beams so as to move with the same movement amount on the surface to be exposed; and a scanning field corresponding to an exposure pattern to be formed on the surface to be exposed. A blanking array that individually controls for each electron beam whether to transmit or block the plurality of electron beams in order to control whether or not each exposure position is exposed, and the deflector includes: When moving the plurality of electron beams from one exposure position to the next exposure position, the blanking array moves the plurality of electron beams to an exposure position where at least one of the plurality of electron beams should be transmitted. The exposure position where all of the plurality of electron beams should be blocked by the blanking array is controlled to be skipped .

  According to the present invention, for example, it is possible to provide an electron beam exposure method and apparatus advantageous for improving throughput.

  According to one embodiment of the present invention, without using a stencil mask, the exposure area that can be exposed at one time is expanded by reducing the influence of space charge effect and aberration of the reduced electron optical system, and an electron beam with high throughput is obtained. An exposure apparatus is provided.

  According to another embodiment of the present invention, an electron beam exposure apparatus that does not limit the patterns that can be used for the stencil mark is provided.

  (1) An embodiment of the electron beam exposure apparatus of the present invention is an electron beam exposure apparatus having a light source that emits an electron beam and a reduced electron optical system that reduces and projects an image of the light source on an exposed surface. A plurality of intermediate images of the light source are formed in a direction perpendicular to the optical axis of the reduced electron optical system, provided between the reduced electron optical systems, and each intermediate image is reduced to the exposed surface by the reduced electron optical system A correction electron optical system that corrects in advance aberrations generated during projection is provided.

  (1-1) The correction electron optical system can set the position of each intermediate image in the optical axis direction of the reduced electron optical system according to the curvature of field of the reduced electron optical system.

  (1-2) The correction electron optical system can set the position of each intermediate image in a direction orthogonal to the optical axis of the reduced electron optical system according to distortion of the reduced electron optical system.

  (1-3) The electron beam exposure apparatus may include means for blocking the electron beam for each intermediate image so that the electron beam forming the intermediate image does not reach the exposed surface.

  (1-4) The electron beam exposure apparatus may include a control unit that controls the blocking unit according to a pattern to be exposed on the surface to be exposed.

  (1-5) The electron beam exposure apparatus may include first position adjusting means for adjusting the position of each intermediate image in a direction orthogonal to the optical axis of the reduced electron optical system.

  (1-6) The electron beam exposure apparatus includes: a position detection unit that detects a position where each of the intermediate images is reduced and projected by the reduced electron optical system; and the intermediate image is generated based on a result of the position detection unit. And a means for controlling the first position adjusting means so as to be located at a predetermined position.

  (1-7) The electron beam exposure apparatus may include a second position adjusting unit that adjusts the position of each intermediate image in the optical axis direction of the reduced electron optical system.

  (1-8) The electron beam exposure apparatus includes a position detection unit that detects a position where each of the intermediate images is reduced and projected by the reduction electron optical system, and the second position adjustment based on a result of the position detection unit. Means for controlling the means.

  (1-9) The reduced electron optical system can have a magnification adjusting means for adjusting the magnification of the reduced electron optical system.

(1-10) The electron beam exposure apparatus controls a position detection unit that detects a position where each intermediate image is reduced and projected by the reduction electron optical system, and controls the magnification adjustment unit based on a result of the detection unit. Means.
(1-11) The reduction electron optical system includes a deflection unit that scans the plurality of light source images within the exposure surface, and a deflection aberration correction unit that corrects aberrations that occur during deflection. Can do.

  (1-12) The electron beam exposure apparatus may include means for changing the size of the light source.

  (1-13) In the electron beam exposure apparatus, the correction electron optical system includes an electron optical system that makes an electron beam from a light source substantially parallel, and each intermediate image from a part of the electron beam that is substantially parallel. And a plurality of element electron optical systems.

  (1-14) The focal length of each of the element electron optical systems can be set according to the curvature of field of the reduced electron optical system.

  (1-15) The position of each element electron optical system in the direction orthogonal to the optical axis of the reduced electron optical system can be set according to the distortion of the reduced electron optical system.

  (1-16) The astigmatism of each element electron optical system is determined by the position of the light source image formed via the element electron optical system in the image plane of the reduction electron optical system and the astigmatism of the reduction electron optical system. It can be set according to the point aberration.

  (1-17) For each of the element electron optical systems, an aperture stop that blocks an electron beam incident in the vicinity of the optical axis of the element electron optical system can be provided on the light source side.

  (1-18) The electron beam exposure apparatus includes means for switching a focal length of the element electron optical system, and the element electron optical system when the focal length of the element electron optical system is switched to a predetermined focal length. On the other hand, a shielding stop for shielding the electron beam incident on the element electron optical system can be provided on the exposed surface side.

  (1-19) The shielding stop may be disposed on a pupil of the reduced electron optical system.

  (1-20) Means for deflecting a substantially parallel electron beam incident on the intermediate image electron lens system toward the light source for each of the element electron optical systems, and the electron beam incident on the intermediate image electron lens system When the beam is deflected, a shielding stop for shielding the electron beam can be provided on the exposed surface side with respect to the element electron optical system.

  (1-21) The blocking diaphragm is disposed at a pupil of the reduction electron optical system.

  (1-22) The plurality of element electron optical systems may be formed on the same substrate.

  (2) An embodiment of the electron beam exposure method of the present invention is an electron beam exposure method in which an image of a light source that emits an electron beam is reduced and projected onto a surface to be exposed by a reduced electron optical system, the light source and the reduced electron optical system A plurality of intermediate images of the light source are formed in a direction orthogonal to the optical axis of the reduced electron optical system, and each intermediate image is formed on the exposed surface by the reduced electron optical system. A step of correcting in advance aberrations generated when the projection is reduced.

  (2-1) The exposure method may include a position detection step of detecting a position where each of the intermediate images is reduced and projected by the reduction electron optical system.

  (2-2) The exposure method may include a step of adjusting the position of each intermediate image in the optical axis direction of the reduced electron optical system based on the result of the position detection step.

  (2-3) The exposure method may include a step of adjusting the position of each intermediate image in a direction orthogonal to the optical axis of the reduced electron optical system based on the result of the position detection step.

  (2-4) The exposure method may include a step of adjusting a magnification of the reduced electron optical system based on a result of the position detection step.

  (2-5) The exposure method includes a deflection stage for scanning a plurality of the light source images in an image plane of the reduction electron optical system, and a deflection aberration correction correction stage for correcting aberrations generated during the deflection. Can have.

  (2-6) The deflection aberration correction step may include a step of adjusting the position of each intermediate image with respect to the optical axis direction of the reduction electron optical system.

  (3) According to an embodiment of the electron beam exposure method of the present invention, a plurality of electron beams are moved on the exposed surface with the same movement amount, and the plurality of electrons are formed according to an exposure pattern to be formed on the exposed surface. In the electron beam exposure method in which the beams are individually blocked, when moving the plurality of electron beams, if all the plurality of electron beams are blocked at the next movement position, the movement position after the next movement position is set. Preliminarily setting the movement of the plurality of electron beams.

  (3-1) The exposure method may include a step of setting intervals of the plurality of electron beams according to a pitch of a repetitive pattern included in the exposure pattern.

  (3-2) The exposure method may include a step of setting an interval between the plurality of electron beams to an integral multiple of a pitch of a repetitive pattern included in the exposure pattern.

  (4) An embodiment of the electron beam exposure apparatus of the present invention is an electron beam exposure apparatus having a light source that emits an electron beam and an electron optical system that focuses the electron beam on a surface to be exposed. When passing through the pupil plane of the optical system, there is provided an electron density distribution adjusting means for making the electron density distribution of the electron beam on the pupil plane larger than the electron density of the peripheral portion.

  (4-1) The electron optical system can project a reduced image of the light source on the exposed surface.

  (4-2) The exposure apparatus includes means for illuminating the substrate on which the pattern transmission holes are formed with the electron beam, and the electron optical system can reduce and project the electron beam transmitted through the substrate.

  (4-3) The electron density distribution adjusting means is, for example, a stop provided on a pupil plane of the electron optical system or a position conjugate with the pupil plane.

  Hereinafter, the present invention will be specifically described by way of example with reference to the drawings.

[Description of Principle]
FIG. 4 is a diagram for explaining the principle of the present invention. PL is a reduction electron optical system, and AX is an optical axis of the reduction electron optical system PL. O1, O2, and O3 are point light sources that emit electrons, and I1, I2, and I3 are point light source images corresponding to the respective point light sources.

  In FIG. 4A, electrons emitted from point light sources O1, O2, and O3 located on the object side of the reduced electron optical system PL and perpendicular to the optical axis AX pass through the reduced electron optical system PL. Thus, point light source images I1, I2, and I3 corresponding to the respective point light sources are formed on the image side. At that time, the point light source images I1, I2, and I3 are not formed in the same plane perpendicular to the optical axis AX due to aberration (field curvature) of the reduction electron optical system.

  Therefore, as shown in FIG. 4B, in the present invention, the point light sources O1, O2, and O3 are formed so that the point light source images I1, I2, and I3 are formed in the same plane perpendicular to the optical axis AX. The position in the optical axis direction is previously differentiated according to the aberration (field curvature) of the reduction electron optical system. Furthermore, since the reduction electron optical system has different aberrations (astigmatism, coma, distortion) depending on the position of the light source on the object side, if the light source is pre-distorted accordingly, a more desired light source image is formed in the same plane. .

Therefore, in the present invention, a plurality of intermediate images of the light source are formed on the object side of the reduction electron optical system,
By providing a correction electron optical system that corrects in advance aberrations generated when each intermediate image is reduced and projected onto the exposure surface by the reduction electron optical system, a large number of light source images having a desired shape can be simultaneously provided in a wide exposure area. Can be formed.

  As a matter of course, the plurality of intermediate images described above is not limited to being formed from a single light source, and a plurality of intermediate images may be formed from a plurality of light sources.

  Hereinafter, the present invention will be described in detail with reference to examples.

Example 1
[Explanation of exposure system components]
FIG. 1 shows a first embodiment of an electron beam exposure apparatus according to the present invention.

  In FIG. 1, reference numeral 1 denotes an electron gun including a cathode 11, a grid 12, and an anode 13, and electrons emitted from the cathode 11 form a crossover image between the grid 12 and the anode 13.

  The electron gun 1 has a function of changing the grid voltage, so that the size of the crossover image can be changed.

Further, by providing an electron optical system (not shown) for enlarging, reducing, or shaping the crossover image, an enlarged, reduced, or shaped crossover image can be obtained, whereby the size and shape of the crossover image are obtained. Can be changed. (Hereinafter, these crossover images are referred to as light sources.)
The electrons emitted from the light source become a substantially parallel electron beam by the condenser lens 2 whose front focal position is at the light source position. A plurality of element electron optical systems (31, 32) (the number of element electron optical systems is preferably as large as possible. However, in order to simplify the explanation, this two element electron optical system is shown in FIG. Are incident on a correction electron optical system 3 arranged in a direction orthogonal to the optical axis. Details of the plurality of element electron optical systems (31, 32) constituting the correction electron optical system 3 will be described later.

  The correction electron optical system 3 forms a plurality of intermediate images (MI1, MI2) of the light source, and each intermediate image forms a light source image (I1, I2) on the wafer 5 by the reduced electron optical system 4. At this time, each element of the correction electron optical system 3 is set so that the interval between the light source images on the wafer 5 is an integral multiple of the size of the light source image. Further, the correction electron optical system 3 varies the position of each intermediate image in the optical axis direction according to the field curvature of the reduction electron optical system 4, and each intermediate image is reduced and projected onto the wafer 5 by the reduction electron optical system 4. Aberrations that occur during the correction are corrected in advance.

  The reduction electron optical system 4 is a symmetric magnetic tablet including a first projection lens 41 and a second projection lens 42. When the focal length of the first projection lens 41 is f1, and the focal length of the second projection lens 42 is f2, the distance between the two lenses is f1 + f2. The intermediate image on the optical axis AX is at the focal position of the first projection lens 41, and the image is focused on the focus of the second projection lens. This image is reduced to -f2 / f1. In addition, since the two lens magnetic fields are determined so as to act in opposite directions, theoretically, the five aberrations of spherical aberration, isotropic astigmatism, isotropic coma aberration, field curvature aberration, and axial chromatic aberration are determined. Except for aberrations, other Seidel aberrations and chromatic aberrations related to rotation and magnification are canceled out.

  A deflector 6 deflects electron beams from a plurality of intermediate images and moves the images of the plurality of intermediate images on the wafer 5 in the X and Y directions. The deflector 6 includes an MOL (moving object lens) type electromagnetic deflector 61 that deflects with a converging magnetic field and a deflecting magnetic field that satisfies the MOL condition, and an electrostatic deflector 62 that deflects with an electric field. The electromagnetic deflector 61 and the electrostatic deflector 62 are selectively used according to the moving distance of the light source image. Reference numeral 7 denotes a dynamic focus coil that corrects a focus position shift caused by deflection aberration generated when the deflector is operated, and reference numeral 8 denotes a dynamic stig coil that similarly corrects astigmatism generated by deflection.

  91 and 92 are constituted by a plurality of electrostatic deflectors that translate (X and Y directions) or deflect (tilt with respect to the Z axis) electron beams from a plurality of intermediate images formed by the correction electron optical system. It is a deflector.

  10 is a Faraday cup having two single knife edges extending in the X and Y directions.

  Reference numeral 11 denotes an XYZ stage movable in the XYZ directions on which the wafer 5 is placed and moved, and is controlled by the stage drive controller 23.

  The Faraday cup 10 fixed to the wafer stage cooperates with the laser interference optical system 20 for detecting the position of the XYZ stage to transfer the charge amount of the light source image formed by the electron beam from the element electron optical system via the knife edge. By detecting while moving, the size of the light source image, its position (X, Y, Z), and the current irradiated from the element electron optical system can be detected.

  Next, the element electron optical system constituting the correction electron optical system 3 will be described with reference to FIG.

  In FIG. 5 (A), 301 is a blanking electrode composed of a pair of electrodes and having a deflection function, and 302 is an aperture stop having an aperture (AP) that defines the shape of the transmitted electron beam. In addition, a blanking electrode 301 and a wiring (W) for electrode on / of are formed. Reference numeral 303 denotes a unipotential lens having a converging function, which is composed of three aperture electrodes, in which the upper and lower electrodes are the same as the acceleration potential V0 and the intermediate electrode is maintained at another potential V1. 304 is a blanking aperture located on the focal plane of the unipotential lens 302.

  The electron beam made substantially parallel by the condenser lens 2 forms an intermediate image (MI) of the light source on the blanking aperture 304 by the unipotential lens 302 via the blanking electrode 301 and the aperture (AP). At this time, if no electric field is applied between the electrodes of the blanking opening 304, the opening of the blanking opening 304 is transmitted like the electron beam bundle 305. On the other hand, when an electric field is applied between the electrodes of the blanking opening 304, it is blocked by the blanking opening 304 like the electron beam bundle 306. Further, since the electron beam 305 and the electron beam bundle 306 have different angular distributions on the blanking aperture 304 (object surface of the reduced electron optical system), as shown in FIG. 5B, the pupil position ( On the P plane in FIG. 1, the electron beam bundle 305 and the electron beam bundle 306 are incident on different regions. Therefore, instead of providing the blanking aperture 304, a blanking aperture 304 ′ that transmits only the electron beam bundle 305 may be provided at the pupil position (on the P plane in FIG. 1) of the reduced electron optical system. Accordingly, the correction electron optical system 3 can be shared with the blanking apertures of other element electron optical systems.

  In this embodiment, a unipotential lens having a converging action is used. However, a virtual intermediate image may be formed using a dipotential lens having a diverging action.

  Returning to FIG. In the correction electron optical system 3, the position of the intermediate image formed by each of the above-described element electron optical systems in the optical axis direction is made different according to the curvature of field of the reduction electron optical system 4. As one specific means, the element electron optical systems are made the same, and the position of each element electron optical system is changed in the optical axis direction. As another method, each element electron optical system is installed on the same plane, and the electron optical characteristics (focal length, principal surface position) of each element electron optical system, particularly the unipotential lens, are made different so that the light of each intermediate image can be obtained. The position in the axial direction is changed. The latter employed in the present embodiment will be described in detail with reference to FIG.

In FIG. 6, a blanking electrode is formed for each opening on an opening aperture 302 having two openings (AP1, AP2) having the same shape, thereby forming a blanking array. Each blanking electrode is individually wired so that the electric field can be turned on / off independently. (See Figure 7)
The unipotential lenses 303-1 and 303-2 constitute a lens array by bonding three insulators 307, 308, and 309 on which electrodes are formed. The upper and lower electrodes (303U, 303D) are wired to a common potential (see FIG. 8), and the intermediate electrode (303M) is wired so that the potential can be individually set (see FIG. 9). The blanking array and the lens array have an integral structure with an insulator 310 interposed therebetween.

  The electrode shapes of the unipotential lenses 303-1 and 303-2 are the same, but the focal lengths are different because the potentials of the intermediate electrodes are different. Therefore, the positions of the intermediate images (MI1, MI2) in the optical axis direction are different like the electron beam bundles 311 and 312.

  Further, in order to correct astigmatism generated when each intermediate image is reduced and projected onto the exposure surface by the reduced electron optical system 4, each element electron optical system generates reverse astigmatism. In order to generate reverse astigmatism, the shape of the aperture electrode constituting the unipotential lens is distorted. As shown in FIG. 10, if the shape of the aperture electrode is circular like the unipotential lens 303-1, the electrons distributed in the M direction and the electrons distributed in the S direction form an intermediate image at substantially the same position 313. However, when the aperture electrode shape is elliptical like the unipotential lens 303-3, electrons distributed in the M direction (minor axis direction) form an intermediate image at the position 314 and are distributed in the S direction (major axis direction). The electrons that form form an intermediate image at position 315.

  Therefore, by changing the aperture electrode shape of the unipotential lens of each element electron optical system according to the astigmatism of the reduced electron optical system 4, each intermediate image is reduced and projected onto the exposure surface by the reduced electron optical system 4. Astigmatism that occurs during the correction can be corrected.

  Further, in order to correct coma aberration that occurs when each intermediate image is reduced and projected onto the exposure surface by the reduction electron optical system 4, each element electron optical system generates reverse coma aberration. In order to generate the reverse coma aberration, as one method, each element electron optical system decenters the center of the aperture on the aperture stop 302 with respect to the optical axis of the unipotential lens 303. As another method, electron beams from a plurality of intermediate images formed by the respective element electron optical systems are individually deflected by deflectors (91, 92).

  Furthermore, in order to correct distortion aberration that occurs when a plurality of intermediate images are reduced and projected onto the exposure surface by the reduced electron optical system 4, the distortion characteristics of the reduced electron optical system 4 are known in advance, and reduction is performed based on the distortion characteristics. The position of each element electron optical system in the direction orthogonal to the optical axis of the electron optical system 4 is set.

[Description of operation]
As shown in FIG. 11A, the light source image (I1, I2) formed on the wafer 5 by each element electron optical system (31, 32) indicates the scanning field of each element electron optical system at each reference position ( A fixed amount of movement is obtained by the polarizer 6 starting from A, B), the wafer is exposed, and sequentially deflected to the next exposure position (as indicated by the arrows in the figure) to expose the wafer. In the figure, each cell represents an area exposed by one light source image, and a hatched cell is an area to be exposed, and an unhatched cell is an unexposed area.

When the pattern data of the exposure pattern as shown in FIG. 11 (A) is input, the CPU 12 divides it into scanning fields for each element electron optical system, and as shown in FIG. 11 (B), the starting point for each scanning field. Position data (dx, dy) of the exposure position with reference to the position (A, B) and exposure data (whether the hatched cell is 1, hatched at each exposure field) A set of exposure control data. Then, an exposure control data file in which the exposure control data is arranged in the order of exposure is created. (Because the scanning field of each element electron optical system is obtained from the reference position (A, B) as a starting point, the same amount of movement is obtained by the deflector 6, the exposure data of a plurality of scanning fields for one position data Can be combined.)
Further, in the exposure control data, the exposure control data that is not exposed in all the scanning fields, that is, all the exposure data is 0 is deleted (exposure data surrounded by DEL in FIG. 11B), and FIG. Recreate the exposure control data file as shown in C). Then, the exposure control data file is stored in the memory 19 via the interface 13.

  In addition, when the input pattern has a large number of repetitive patterns with a specific period (pitch) (for example, a circuit pattern of a DRAM with a large number of patterns corresponding to the cell pitch), the start position interval of each scanning field is set to the specific pattern. The starting position of each scanning field (interval between light source positions formed via each element electron optical system on the wafer) is set so as to be an integral multiple of the period (pitch). Thereby, the exposure control data in which all exposure data is 0 increases, and the data can be further compressed. Specifically, the magnification of the reduction electron optical system 4 is adjusted (the focal length of each of the first projection lens 41 and the second projection lens 42 is changed by the magnification adjustment circuit 22), and each element electron optics. There is a method of adjusting the position of an intermediate image formed by the system by deflectors 91 and 92.

  In addition, when a pattern has already been formed on the wafer 5 and a pattern input to the apparatus is overprinted on the pattern, the wafer has already been formed by expansion and contraction by a process that was performed before the wafer was overprinted. The pattern that is also stretched. Therefore, in this apparatus, the position of at least two wafer alignment marks on the wafer 5 is detected by an alignment apparatus (wafer mark position detection apparatus) (not shown), and the expansion / contraction ratio of the already formed pattern is detected. Based on the detected expansion / contraction ratio, the magnification of the reduction electron optical system 4 is adjusted by the magnification adjusting circuit 22 to expand / contract the interval between the light source images, and the gain of the polarizer 6 is adjusted by the deflection control circuit 21 to adjust the light source image. Stretch the amount of movement. Therefore, good overprinting can be achieved even for a pattern subjected to expansion and contraction.

  Returning again to FIG. 1, the operation of this embodiment will be described. When a calibration command for the exposure system is issued by the CPU 12, the sequence controller 14 determines the position in the optical axis direction of the intermediate image formed by each element electron optical system of the correction electron optical system 3 via the focus control circuit 15. The potential of the intermediate electrode of each element electron optical system is set so as to be set at a predetermined position.

  Then, the system controller 14 controls the blanking control circuit 16 so that only the electron beam from the element electron optical system 31 is irradiated to the XYZ stage 11 side, and operates the blanking electrodes other than the element electron optical system 31. (Blanking on). At the same time, the drive controller 17 drives the XYZ stage 11 to move the Faraday cup 10 in the vicinity of the light source image formed by the electron beam from the element electron optical system 31, and the position of the XYZ stage 11 at that time is moved by the laser interferometer 20. To detect. Then, while detecting the position of the XYZ stage 11 and moving the XYZ stage, the Faraday cup 10 detects the light source image formed by the electron beam from the element electron optical system 31, and the position, size, Detect the current applied. The position (X1, Y1, Z1) at which the light source image has a predetermined size and the current I1 irradiated at that time are detected.

  Next, the blanking control circuit 16 is controlled so that only the electron beam from the element electron optical system 32 is irradiated to the XYZ stage 11 side, and the blanking electrodes other than the element electron optical system 32 are operated. At the same time, the drive controller 17 drives the XYZ stage 11 to move the Faraday cup 10 in the vicinity of the light source image formed by the electron beam from the element electron optical system 31, and the position of the XYZ stage 11 at that time is moved by the laser interferometer 20. To detect. Then, while detecting the position of the XYZ stage 11 and moving the XYZ stage, the light source image formed by the electron beam from the element electron optical system 32 is detected by the Faraday cup 10, and the position, size, The current irradiated at that time is detected. The position (X2, Y2, Z2) where the light source image becomes a predetermined size and the irradiation current I2 at that time are detected.

  Based on the detection result, the sequence controller places the position in the XY direction of each light source image formed by the electron beams from the element electron optical systems 31 and 32 in a predetermined relative positional relationship. Each intermediate image is translated in the XY directions by deflectors 91 and 92 via the optical axis alignment control circuit 18. Further, in order to position the position in the Z direction of each light source image formed by the electron beams from the element electron optical systems 31 and 32 within a predetermined range, each element electron optical system is connected via a focus control circuit 15. Reset the potential of the intermediate electrode. Further, the detected current to be irradiated onto the wafer of each element electron optical system is stored in the memory 19.

Next, when the exposure of the pattern is started by a command of the CPU 12, the sequence controller 14 reads the sensitivity of the resist applied to the wafer 5 previously input to the memory 19 and each of the memories stored in the memory 19 as described above. Based on the irradiation current on the wafer for each element electron optical system, the exposure time at the exposure position of the light source image formed by each element electron optical system (the residence time of the light source image at the exposure position) is It is calculated for each system and transmitted to the blanking control circuit 16. In addition, the sequence controller 14 transmits the exposure control file stored in the memory 19 to the blanking control circuit 16 as described above. The blanking control circuit 16 sets the blanking OFF time (exposure time) for each element electron optical system, and the exposure data and element electron optics for each element electron optical system in the transmitted exposure control file. Based on the blanking OFF time (exposure time) for each system, a blanking signal as shown in FIG. 12 is transmitted to each element electron optical system in synchronization with the deflection control circuit 21, and exposure for each element electron optical system is performed. Timing and exposure amount are controlled. (The exposure time at each exposure position is longer in field 2 than in field 1)
On the other hand, the sequence controller 14 transmits the exposure control file stored in the memory 19 to the deflection control circuit 21 as described above. In the deflection control circuit 2, based on the position data in the transmitted exposure control file, the deflection control signal, the focus control signal, and the astigmatism correction signal are respectively transmitted via the D / A to the deflector 6, the dynamic focus. Transmission is performed in synchronization with the blanking control circuit 16 to the coil 7 and the dynamic stig coil 8, and the positions of a plurality of light source images on the wafer are controlled.

  If the focus position shift due to deflection aberration that occurs when the deflector is actuated cannot be corrected with just the dynamic focus coil, the focus is set so that the position of the light source image in the Z direction is within a predetermined range. The position of the intermediate image in the optical axis direction may be changed by adjusting the potential of the intermediate electrode of each element electron optical system via the control circuit 15.

[Other Example 1 of Element Electron Optical System]
Another example 1 of the element electron optical system will be described with reference to FIG. In the figure, the same components as those in FIG.

  The main difference from the element electron optical system of FIG. 5 is the aperture shape on the aperture stop and the blanking electrode. This aperture (AP) shields the electron beam incident in the vicinity of the optical axis of the unipotential lens 303 and forms a holo-beam (hollow cylindrical beam) -shaped electron beam. The blanking electrode 321 is a blanking electrode suitable for this opening shape, and is composed of a pair of cylindrical electrodes.

  The electron beam made substantially parallel by the condenser lens 2 forms an intermediate image of the light source on the blanking aperture 304 by the unipotential lens 302 via the blanking electrode 321 and the aperture stop 322. At this time, if no electric field is applied between the electrodes of the blanking opening 304, the opening of the blanking opening 304 is transmitted like the electron beam bundle 323. On the other hand, when an electric field is applied between the electrodes of the blanking opening 304, the electron beam is deflected and blocked by the blanking opening 304 like the electron beam bundle 324. Further, since the electron beam bundle 323 and the electron beam 324 have different angular distributions on the blanking aperture 304 (the object surface of the reduced electron optical system), the pupil position of the reduced electron optical system (see FIG. 13B). In FIG. 1P), the electron beam bundle 323 and the electron beam bundle 324 are incident on different regions. Therefore, instead of providing the blanking aperture 304, a blanking aperture 304 ′ that transmits only the electron beam bundle 323 may be provided at the pupil position of the reduced electron optical system. Accordingly, the correction electron optical system 3 can be shared with the blanking apertures of other element electron optical systems.

  In addition, since the electron beam in the form of a hollow beam (hollow cylindrical beam) has a smaller space charge effect than a non-hollow electron beam (for example, a Gaussian beam), the electron beam is focused on the wafer, and a light source image with a small blur is formed on the wafer. Can be formed. That is, when the electron beam from each element electron optical system passes through the pupil plane P of the reduction electron optical system 4, the electron density distribution of the electron beam on the pupil plane is such that the electron density in the peripheral part is higher than the electron density in the central part. By increasing the size, the above effect can be obtained. The electron density distribution on the pupil plane P is such that the aperture (center portion is shielded from light) on the aperture stop 320 provided at a position substantially conjugate with the pupil plane P of the reduction electron optical system 4 as in this embodiment. Open).

[Other Embodiment 2 of Element Electron Optical System]
Next, another example 2 of the element electron optical system will be described with reference to FIG. In the figure, the same components as those in FIG. 5 or FIG.

  The main differences from the element electron optical system of FIG. 5 are the aperture shape on the aperture stop (the same shape as the aperture stop in FIG. 13A) and the absence of blanking electrodes.

  The electron beam made substantially parallel by the condenser lens 2 forms an intermediate image of the light source on the blanking aperture 304 by the unipotential lens 302 via the aperture stop 322. At this time, if the intermediate electrode of the unipotential lens 302 is set to a predetermined potential, the electron beam is converged and transmitted through the blanking opening 304 like the electron beam bundle 330. On the other hand, when the intermediate electrode of the unipotential lens 302 is set to the same potential as the other electrodes, the electron beam is not converged and is blocked by the blanking opening 304 like the electron beam bundle 331. Blanking can be controlled by changing the potential of the intermediate electrode of the unipotential lens 302.

  Further, since the electron beam bundle 331 and the electron beam bundle 332 have different angular distributions on the blanking aperture 304 (object surface of the reduced electron optical system), the pupil position of the reduced electron optical system as shown in FIG. (P in FIG. 1), the electron beam 330 and the electron beam 331 are incident on different regions. Therefore, instead of providing the blanking aperture 304, a blanking aperture 304 ′ that transmits only the electron beam bundle 330 may be provided at the pupil position of the reduced electron optical system. Accordingly, the correction electron optical system 3 can be shared with the blanking apertures of other element electron optical systems.

(Example 2)
[Explanation of exposure system components]
FIG. 15 is a view showing Embodiment 2 of the electron beam exposure apparatus according to the present invention. In the figure, the same components as those in FIG.

  In FIG. 15, the electrons emitted from the light source of the electron gun 1 become a substantially parallel electron beam by the condenser lens 2 whose front focal position is at the light source position. A substantially parallel electron beam is formed by an element electron optical system array 130 formed by arranging a plurality of element electron optical systems described in FIG. 13 in a direction perpendicular to the optical axis (in the correction electron optical system 3 of the first embodiment). To form a plurality of intermediate images. The element electron optical system array 130 includes a plurality of subarrays in which a plurality of element electron optical systems having the same electron optical characteristics are arranged, and the electron optical characteristics of the element electron optical systems belonging to each of the at least two subarrays are different. Details of the element electron optical system array 130 will be described later.

  Reference numeral 140 denotes a deflector that deflects (tilts with respect to the Z axis) an electron beam incident on the subarray, and is installed for each subarray. The function of the deflector 140 is to correct the difference in the incident angle of the electron beam incident on the sub-arrays at different positions due to the aberration of the condenser lens 2 for each sub-array.

  Reference numeral 150 denotes a deflector that translates (X and Y directions) and deflects (tilts with respect to the Z axis) the electron beams of a plurality of intermediate images formed by the subarray. This corresponds to 91 and 92 in the first embodiment, and the difference is that a plurality of electron beams from the subarray are translated and deflected together.

  A plurality of intermediate images formed by the element electron optical system array 130 are reduced and projected onto the wafer 5 by the reduced electron optical system 100 and the reduced electron optical system 4.

  In this embodiment, two-stage reduction is adopted in order to reduce the reduction ratio without increasing the size of the exposure apparatus. The reduction electron optical system 100 includes a first projection lens 101 and a second projection lens 102 as in the reduction electron optical system 4. That is, the reduced electron optical system 4 and the reduced electron optical system 100 constitute one reduced electron optical system.

  110 is a refocusing coil. When the number of electron beams from the element electron optical system array increases, the beam size incident on the reduced electron optical system substantially increases, and the light source image is blurred due to the space charge effect. In order to correct this, the focus position is controlled based on the number of light source images irradiated to the wafer obtained from the sequence controller 14 (the number of blanking electrodes turned off).

  120 is a common blanking aperture of the element electron optical system which is located on the pupil plane of the reduction electron optical system 100 and constitutes the element electron optical system array, and corresponds to 304 'in FIG.

  Next, the element electron optical system array 130 will be described with reference to FIG. This figure shows the element electron optical system array 130 as viewed from the electron gun 1 side.

  The element electron optical system array 130 is an arrangement of the element electron optical systems described in FIG. 13, and includes a blanking array in which a plurality of openings, blanking electrodes corresponding to the openings, and wirings thereof are formed on one substrate. The lens array is composed of a lens array in which electrodes constituting a unipotential lens are laminated on a single substrate with an insulator interposed, and the blanking array and the lens array are positioned so that each aperture and the corresponding unipotential lens face each other. Combined.

  130A to 130G are subarrays each including a plurality of element electron optical systems. For example, in the subarray 130A, 16 element electron optical systems 130A-1 to 130A-16 are formed. Since the amount of aberration to be corrected in one subarray is almost the same or within the allowable range, the unipotential lenses of the element electron optical systems 130A-1 to 130A-16 are applied with the same potential with the same aperture electrode shape. ing. Accordingly, wiring for applying individual potentials to the electrodes is not necessary. However, the blanking electrode requires individual wiring as in the first embodiment.

  Of course, the sub-array may be further divided into a plurality of sub-sub-arrays, and the electron-optical characteristics (focal length, astigmatism, coma aberration, etc.) of the element electron optical system may be the same for each sub-sub-array. Of course, wiring of the intermediate electrode is required for each sub-subarray at that time.

[Description of operation]
Differences from the first embodiment will be described.

  First, when performing calibration calibration of an exposure system, in the first embodiment, for all light source images, the position (X, Y, Z) at which the light source image becomes a predetermined size and the irradiation current I at that time are determined. In this embodiment, at least one light source image representing the subarray is detected. Based on the detection result, the sequence controller sets the optical axis alignment control circuit 18 in order to position the position of each light source image of the element electron optical system representing the subarray in the XY direction in a predetermined relative positional relationship. Accordingly, the deflector 150 translates each intermediate image in the sub-array by the same amount in the direction orthogonal to the optical axis of the reduced electron optical system. In addition, in order to position the position in the Z direction of each light source image of the element electron optical system representing the subarray within a predetermined range, the potential of the intermediate electrode of each subarray is set via the focus control circuit 15. fix. Further, the detected irradiation current of the element electron optical system representative of the subarray is stored in the memory 19 as the irradiation current of each element electron optical system in the same subarray.

  As shown in FIG. 17, the light source image formed on the wafer 5 by each element electron optical system in the subarray has the same movement amount starting from each reference position (black circle) as the scanning field of each element electron optical system. Obtained by the deflector 6, the scanning field of each element electron optical system is adjacent to expose the wafer. Then, the wafer is exposed by all the subarrays as shown in FIG. Then, the light is stepped Ly in the Y direction by the polarizer 7, and the scanning field of each element electron optical system is obtained from the reference position (black circle) as the starting point by the deflector 6 to expose the wafer. By repeating the above four times, an exposure field adjacent to the exposure field of each subarray is formed as shown in FIG.

(Example 3)
[Explanation of exposure system components]
FIG. 20 is a view showing Embodiment 3 of the electron beam exposure apparatus according to the present invention. In the figure, the same components as those in FIGS. 1 and 15 are denoted by the same reference numerals, and the description thereof is omitted.

  In the present embodiment, at least one electrode for decelerating or accelerating the electron beam is added to the second embodiment, and means for changing the light source shape is provided.

  The unipotential lens, which is an electrostatic lens constituting the element electron optical system array 130, can achieve a smaller electron lens as the energy is lower.

  However, it is necessary to increase the anode voltage in order to extract many electron beams from the electron gun 1, and as a result, the electrons from the electron gun may have high energy. Therefore, in this embodiment, a deceleration electrode such as DCE in the figure is provided between the electron gun 1 and the element electron optical system array 130. The deceleration electrode is an electrode having a lower potential than the anode, and thereby adjusts the energy of electrons incident on the element electron optical system array 130. The shape includes a type having an opening corresponding to each of the element electron optical systems as shown in FIG. 5A and a type having an opening corresponding to each of the sub-arrays as shown in FIG.

  The reduced electron optical system (4, 100) increases (accelerates) the energy of the electron beam from the unipotential lens because the electron beam focusing on the wafer becomes worse due to the space charge effect when the energy of the electron beam is low. )There is a need. Therefore, in this embodiment, an acceleration electrode such as ACE in the figure is provided between the element electron optical system array 130 and the reduced electron optical system (4, 100). The acceleration electrode is an electrode having a high potential with respect to the element electron optical system array, and thereby adjusts the energy of electrons incident on the reduced electron optical system (4, 100). Similar to the electrode for deceleration, the shape is a type having an opening corresponding to each of the element electron optical systems as shown in (A) in the figure and a type having an opening corresponding to each of the sub-arrays as shown in (B) in the figure. is there.

  In the first and second embodiments and the present embodiment as well, a desired exposure pattern is formed by transferring the light source image onto the wafer and scanning it. The size of the light source image is set to 1/5 to 1/10 of the minimum line width of the exposure pattern. Therefore, the number of light source image moving steps for exposure can be minimized by changing the size of the light source according to the minimum line width of the exposure pattern. Therefore, in this embodiment, an electron optical system for shaping the light source shape 160 is provided. In the electron optical system 160, the light source S0 of the electron gun forms the light source image S1 with the first electron lens 161, and the image S2 of the light source image S1 with the second electron lens 162. With such a configuration, if the focal lengths of the first electron lens 161 and the second electron lens 162 are changed, the position of the light source image S2 can be fixed and only its size can be changed. The focal lengths of the first electron lens 161 and the second electron lens 162 are controlled by the light source shape shaping circuit 163.

  Further, by providing an opening having a desired shape at the position S2 of the light source image, not only the size of the light source but also the shape can be changed.

Example 4
[Explanation of exposure system components]
FIG. 21 is a view showing Embodiment 4 of the electron beam exposure apparatus according to the present invention. In the figure, the same components as those in FIGS. 1, 15, and 20 are denoted by the same reference numerals, and the description thereof is omitted.

  The electron beam exposure apparatus of this embodiment is a stencil mask type exposure apparatus. That is, the electron beam from the electron gun 1 is shaped by the first shaping aperture 200 having an opening that defines the illumination area, and the first shaping electron lens 210 (comprising the electron lenses 211 and 212) and the shaping deflector 220 are used. The stencil mask 230 having pattern transmission holes is illuminated. Then, the drawing pattern elements of the stencil mask 230 are reduced and projected onto the wafer 5 by the reduction electron optical system (4, 100).

  This embodiment is different from the conventional stencil mask type exposure apparatus in that the electron beam from the stencil mask 230 passes near the pupil of the reduction electron optical system 100 when the electron beam passes through the pupil plane. This is because a diaphragm is provided to make the electron density distribution larger in the peripheral part than in the central part. That is, a holo-beam forming stop 240 that shields the center of the stop as shown in FIG. Then, as shown in FIG. 22, the electron beam from the stencil mask becomes the electron density distribution of the holo beam. For reference, the electron density distribution of a conventional Gaussian beam is also shown.

  As described in [Embodiment 1 of the Element Electron Optical System], the holobeam has a smaller space charge effect than the conventional Gaussian beam. Therefore, the electron beam is focused on the wafer, and a light source image with less blur is formed on the wafer. Can be formed. The electron beam passing through the stencil mask is considered as a light source located on the stencil mask. Then, even when an image of the light source having the shape of the stencil mask pattern is formed on the wafer, the space charge effect is small, and a light source image faithful to the light source shape can be formed. That is, an exposure pattern faithful to the stencil mask pattern can be formed on the wafer.

  In this embodiment, the holo-beam forming stop 240 is provided in the vicinity of the pupil plane of the reduction electron optical system 100. However, the position is conjugate with the pupil of the reduction electron optical system 100, for example, the pupil position of the first shaping lens 210 and the position of the light source S2. Even if a stop having the same shape as the holo-beam forming stop 240 is provided, the above effect can be achieved.

  Further, the shape and potential of each electrode of the electron gun may be adjusted to make the light source itself a holo-beam shape.

  Of course, in the present embodiment, the same configuration can be obtained even if the first shaping aperture 200 is changed to a rectangular opening, a second shaping aperture having a rectangular opening is installed instead of the stencil mask, and the exposure apparatus is changed to a variable rectangular beam type. Can achieve the same effect.

  Next, an embodiment of a device production method using the above-described electron beam exposure apparatus and exposure method will be described.

  FIG. 20 shows a manufacturing flow of a microdevice (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.). In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (exposure control data creation), exposure control data for the exposure apparatus is created based on the designed circuit pattern. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the wafer and the exposure apparatus to which the prepared exposure control data is input. The next step 5 (assembly) is referred to as a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), and the like. including. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, the semiconductor device is completed and shipped (step 7).

  FIG. 21 shows a detailed flow of the wafer process. In step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern is printed onto the wafer by exposure using the exposure apparatus described above. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

  By using the manufacturing method of this embodiment, a highly integrated semiconductor device that has been difficult to manufacture can be manufactured at low cost.

As described above, according to the present invention,
(1) A stencil mask is not required.
(2) Many light source images having a desired shape can be simultaneously formed in a wide exposure area.
(3) Since the light source images are discretely arranged, they are not affected by the space charge effect.
Therefore, a desired exposure pattern can be formed with higher throughput.

  In addition, by forming a holo-beam-like electron beam, the influence of the space charge effect can be reduced. In particular, in a stencil mask type electron beam exposure apparatus, the restriction on the pattern that can be used for the stencil mark can be reduced, and the throughput can be increased.

1 is a diagram showing Embodiment 1 of an electron beam exposure apparatus according to the present invention. The figure which shows the outline | summary of the electron beam exposure apparatus provided with the stencil mask. The figure explaining the concept of stencil mask type | mold exposure. The figure explaining the principle of this invention. The figure explaining an element electron optical system. The figure explaining a correction | amendment electron optical system. Blanking electrode wiring diagram. The figure explaining an upper and lower opening electrode. The figure explaining an intermediate electrode. The figure explaining the unipotential lens which has astigmatism. The figure explaining an exposure pattern and exposure control data. The figure explaining the blanking signal transmitted to each element electron optical system. FIG. 6 is a diagram for explaining another example 1 of the element electron optical system. The figure explaining other Example 2 of an element electron optical system. FIG. 5 is a view showing Embodiment 2 of the electron beam exposure apparatus according to the invention. The figure explaining an element electron optical system array. The figure explaining the scanning field of a subarray. The figure explaining the scanning field of an element electron optical system array. The figure explaining an exposure field. FIG. 5 is a view showing Embodiment 3 of the electron beam exposure apparatus according to the invention. FIG. 9 is a view showing Embodiment 4 of the electron beam exposure apparatus according to the invention. The figure explaining the electron density distribution on a pupil surface. The figure explaining the manufacturing flow of a microdevice. The figure explaining a wafer process.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Electron gun 2 Denser lens 3 Correction electron optical system 31, 32 Element electron optical system 4 Reduction electron optical system 5 Wafer 6 Deflector 7 Dynamic focus coil 8 Dynamic stig coil 91, 92 Deflector 10 Faraday cup 11 XYZ stage 12 CPU
DESCRIPTION OF SYMBOLS 13 Interface 14 Sequence controller 15 Focus control circuit 16 Blanking control circuit 17 Drive control apparatus 18 Optical axis alignment control circuit 19 Memory 21 Laser interference system 130 Element electron optical system array 160 Electron optical system for light source shape shaping DCE Deceleration electrode ACE Acceleration electrode 240 Holobeam forming stop

Claims (6)

An electron beam exposure method using an electron beam exposure apparatus that exposes an exposed surface with a plurality of electron beams, wherein the exposed surface includes a plurality of scanning fields that are respectively exposed with the plurality of electron beams. Each of the scanning fields includes a plurality of exposure positions arranged at the same interval, and the electron beam exposure apparatus deflects the plurality of electron beams so as to move with the same movement amount on the exposed surface. And whether to transmit or block the plurality of electron beams in order to control whether to expose each exposure position in each scanning field according to an exposure pattern to be formed on the exposure surface. A blanking array that is individually controlled for each electron beam, and the electron beam exposure method includes:
When the plurality of electron beams are moved from one exposure position to the next exposure position by the deflector, the plurality of electrons are at an exposure position where the blanking array should transmit at least one of the plurality of electron beams. Moving the beam and skipping the exposure positions where all of the plurality of electron beams should be blocked by the blanking array;
An electron beam exposure method. 2. The electron beam exposure method according to claim 1, wherein intervals between the plurality of electron beams are set in accordance with a pitch of a repetitive pattern included in the exposure pattern. Electron beam exposure method according to claim 2, characterized in that spacing of the plurality of scanning fields is set to an integral multiple of the pitch of repeated patterns included in said exposure pattern.   A device manufacturing method comprising: exposing a substrate to be exposed using the electron beam exposure method according to claim 1; and developing the substrate to be exposed. An electron beam exposure apparatus for exposing an exposed surface with a plurality of electron beams,
The exposed surface includes a plurality of scanning fields that are respectively exposed by the plurality of electron beams, and each of the plurality of scanning fields includes a plurality of exposure positions arranged at the same interval,
The electron beam exposure apparatus comprises:
A deflector for deflecting the plurality of electron beams so as to move with the same movement amount on the exposed surface;
Whether to transmit or block the plurality of electron beams is controlled for each electron beam in order to control whether or not to expose each exposure position in each scanning field according to an exposure pattern to be formed on the exposed surface. With a blanking array that is individually controlled,
The deflector moves the plurality of electron beams to an exposure position at which the blanking array should transmit at least one of the plurality of electron beams when moving the plurality of electron beams from an exposure position to a next exposure position. The electron beam is moved and controlled so as to skip the exposure position where all of the plurality of electron beams should be blocked by the blanking array.
An electron beam exposure apparatus. Device manufacturing method, comprising the steps of exposing a substrate to be exposed using an electron beam exposure apparatus according to claim 5, and a step of developing the substrate to be exposed.

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