JP2005136114A - Electrode substrate and its manufacturing method, and charged beam exposure device using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To realize stable electric contact and to make a charge-up to hardly occur in an exposure device for performing pattern drawing by using a plurality of charged beams. <P>SOLUTION: The electrode substrate includes a substrate 110 having a through hole 120, the electrode 130 installed on the side wall of the through hole, and wiring 140 for applying a voltage to the electrode. The wiring is brought into contact with the back surface 130b of a surface opposed to the through hole of the electrode. An insulator film 160 is provided on at least the part of a portion formed along the front surface of the substrate of the wiring. A conductor film 170 is provided on the insulator film, and this conductor film is electrically grounded. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a charged beam exposure apparatus such as an electron beam exposure apparatus or an ion beam exposure apparatus mainly used for exposure of a micro device such as a semiconductor integrated circuit, and more particularly to a charged beam that performs pattern writing using a plurality of charged beams. The present invention relates to an electrode substrate suitable as a deflector constituting a blanker array or an electron lens array in an exposure apparatus, and a manufacturing method thereof.

Examples of a charged beam exposure apparatus that performs pattern drawing using a plurality of charged beams are disclosed in Patent Document 1 and Non-Patent Document 1. FIG. 11 is a cross-sectional view of a blanking aperture array used in the charged beam exposure apparatus disclosed in Patent Document 1 and Non-Patent Document 1. The blanking aperture array has openings (through holes) and deflectors arranged in an array, and irradiation of a plurality of charged beams can be individually controlled. Here, in the drawing, 51 indicates an opening, and 52 and 53 indicate first and second blanking electrodes, respectively. When a charged beam having passed through the opening 51 is irradiated onto a sample such as a semiconductor wafer, a ground potential signal is applied to the first and second blanking electrodes 52 and 53, and when the first and second blanking electrodes 52 and 53 are cut off, the first and second Simultaneously apply positive and negative potential signals to the blanking electrode.
When exposure is performed using such a plurality of charged beams, the number of beams is one of the major factors that determine the throughput of the exposure apparatus. Therefore, in order to obtain a high-throughput exposure apparatus, it is necessary to produce a small and high-density blanking aperture that can handle a larger number of charged beams.

  In Patent Document 1 and Non-Patent Document 1, as a blanking aperture array manufacturing method, a plurality of openings are two-dimensionally formed at a predetermined interval on a substrate of a semiconductor crystal such as silicon, and deflection electrodes are formed around each opening. A method for making a pair is introduced. Specifically, concave portions corresponding to the blanking aperture array were formed on the surface of the Si substrate, and after forming the deflection electrode adjacent to each concave portion by plating, the substrate surface was used as a plating base. The conductor layer is removed, and then the membrane is formed by wet etching until the back surface of the Si substrate reaches the bottom surface of the recess. The wet etching is performed in a state where the Si substrate is protected except for a part of the back surface thereof.

However, the conventional blanking aperture array has the following problems. That is, (1) the higher the density of the blanking aperture array, the smaller the area of the upper or bottom surface (end surface in the substrate thickness direction) of the electrode. It is difficult to make a stable electrical contact in those planes, and proper deflection and position control of the charged beam may not be performed.
(2) In order to prevent the charged beam from being affected by the electric field from the voltage-applied wiring, a grounded conductor film is formed on the wiring so as to suppress the leakage of the electric field, and the conductor film and When an insulator film is formed to maintain a potential difference with the wiring, if the insulator is exposed near the charged beam, it will cause charge-up on the insulator surface and affect the charged beam passing through the opening. And proper deflection and position control of the charged beam may not be performed.
JP-A-11-354418 “Hiroshi Yasuda: Applied Physics 69, 1135 (1994)”

  The first object of the present invention is to enable stable electrical contact, and a further object is to provide an electrode substrate that is unlikely to cause charge-up.

  In order to achieve the above object, an electrode substrate of the present invention is an electrode substrate comprising a substrate having a through hole, an electrode installed on a side wall of the through hole, and a wiring for applying a voltage to the electrode. The wiring is in contact with the back surface of the surface of the electrode facing the through hole. Preferably, an insulator film is provided on at least a part of a portion formed along the surface of the substrate of the wiring, and a conductor film is provided on the insulator film. Electrically ground.

  The electrode substrate manufacturing method of the present invention is further provided with a substrate having a through hole, a pair of electrodes installed on a side wall of the through hole, and a wiring for applying a voltage to the electrode. A first step of forming a plurality of first openings corresponding to the shape and arrangement of the one set of electrodes in the substrate, and each of the plurality of first openings. A second step of filling the metal to form a metal body to be the electrode; a third step of projecting the metal body to be the electrode from the surface of the substrate; and the substrate surface of the metal body to be the electrode Corresponding to the fourth step of forming the wiring in contact with the surface which is the back surface of the surface facing the through hole in the portion protruding from the surface, and the shape in which the one set of electrodes is disposed in the through hole. Forming a second opening in a portion including between and in the vicinity of the plurality of first openings; Characterized in that it comprises a fifth step of exposing the side surface of the metal body in the serial through-hole.

  The charged beam exposure apparatus of the present invention is a charged beam exposure apparatus that exposes an exposed substrate using a charged beam, and forms a plurality of charged particle sources that emit a charged beam and intermediate images of the charged particle sources. A first electron optical system, a second electron optical system that projects a plurality of intermediate images formed by the first electron optical system onto the substrate to be exposed, and a predetermined position that holds the substrate to be exposed And the first electron optical system has the above-described electrode substrate.

  According to the present invention, since the wiring is brought into contact with the back surface of the electrode, the wiring and the electrode can be brought into contact with each other in a larger area than the end face of the electrode. Therefore, even when the through hole and the electrode of the electrode substrate of the present invention are downsized and densified, it is possible to stably perform electrical contact between the wiring and the electrode. In addition, by providing a shield electrode on the wiring via an insulator film, the exposed portion of the insulator film can be positioned between both end faces of the electrode in the axial direction of the through-hole. Therefore, it is possible to provide a highly reliable deflector. Further, by using this electrode substrate as a deflector in a charged beam exposure apparatus, a highly reliable exposure apparatus can be provided.

The embodiments of the present invention are listed below.
[Embodiment 1]
A deflector for deflecting a charged beam,
The deflector is
A substrate,
A through hole formed in the substrate;
At least two electrodes installed on a side wall of the through hole;
Wiring for applying a voltage independently to the electrodes;
Have
The said wiring is arrange | positioned so that it may contact with the said electrode at least in the surface facing the through-hole of the said electrode.
According to the first embodiment, since the wiring is performed also using the side surface of the electrode, more stable electrical contact can be made to the electrode than the wiring to only the end face (upper surface or bottom surface) of the electrode.

Second Embodiment An insulator film is provided on the wiring, a conductor film is provided on the insulator film, and the conductor film is grounded. Deflector as described in.
According to the second embodiment, it is possible to reduce the influence of the charged beam from the electric field of the wiring, and when the deflectors are arranged in an array, crosstalk between adjacent deflectors can be reduced.
[Embodiment 3] The portion where the insulator film is exposed from the conductor film is disposed in a space between two surfaces of the electrode in the depth direction of the through hole. The deflector according to the second embodiment.
According to the third embodiment, the possibility that the insulator is charged up can be reduced, and a more stable operation can be expected.

[Embodiment 4] The deflector according to any one of Embodiments 2 to 3, wherein the conductor film is made of a noble metal.
According to the fourth embodiment, by using a noble metal, the conductor film is not oxidized and the function as a conductor can be maintained.
[Embodiment 5] The deflector according to any one of Embodiments 1 to 4, wherein the substrate includes an insulating layer at a contact surface between the wiring and the substrate.
According to the fifth embodiment, since the contact surface between the wiring and the substrate includes the insulating layer, a potential can be stably applied to the wiring.
[Embodiment 6] The deflector according to any one of Embodiments 1 to 5, wherein an insulating layer is provided on the contact surface between the substrate and the electrode.
According to the sixth embodiment, since the contact surface between the electrode and the substrate includes the insulating layer, a potential can be stably applied to the electrode.

[Embodiment 7] The deflector according to any one of Embodiments 1 to 6, wherein the substrate is made of silicon.
According to the seventh embodiment, by using silicon for the substrate, reactive ion etching or wet etching with strong alkali can be performed, and the through hole can be formed with high accuracy.
[Embodiment 8] A deflector array, wherein the deflectors according to any one of Embodiments 1 to 7 are arranged in a line or a two-dimensional array.
According to the eighth embodiment, by arranging the deflectors in a line or two-dimensional array, it can be used in an exposure apparatus using a plurality of charged beams.

[Embodiment 9] A charged beam exposure apparatus for exposing a wafer using a charged beam,
The charged beam exposure apparatus comprises:
A charged particle source emitting a charged beam;
A first electron optical system for forming a plurality of intermediate images of the charged particle source;
A second electron optical system that projects a plurality of intermediate images formed by the first electron optical system onto a wafer;
A positioning device for holding and positioning the wafer by driving to a predetermined position;
The charged electron beam exposure apparatus, wherein the first electron optical system includes the deflector according to any one of the first to seventh embodiments or the deflector array according to the eighth embodiment.
The charged beam exposure apparatus according to the ninth embodiment has high reliability because the deflector is highly reliable for stable operation.

Embodiments of the present invention will be described below with reference to the drawings.
[First embodiment]
1A and 1B are schematic views of a charged beam deflector 100 according to a first embodiment of the present invention. FIG. 1A is a top view, and FIG. 1B is a cross-sectional view taken along line AA ′ in FIG. Show.
The deflector 100 is a deflector that deflects one charged beam, and includes a through hole 120 through which a charged beam passes in a substrate 110. Two deflection electrodes 130 are disposed on the side wall of the through hole 120 so as to face each other. The wiring 140 is in electrical contact with a surface (rear surface) 130 b facing the surface (front surface) 130 a facing the through hole 120 of the deflection electrode 130. For this reason, it is possible to contact the electrode 130 in a larger area than when wiring only to the upper surface 130c and / or the bottom surface (upper and lower surfaces in FIG. 1B) 130d of the deflection electrode 130. More stable electrical contact can be made.

An insulating layer 150 is formed between the wiring 140 and the substrate 110 and between the deflection electrode 130 and the substrate 110. An insulating film 160 and a conductive film 170 are formed on the wiring 140. By grounding the conductor film 170 and using it as a shield electrode, the influence of the electric field generated from the wiring 140 on the charged beam can be reduced. Further, by disposing the insulator film 160 in a space sandwiched between the upper surface 130c and the bottom surface 130d of the deflection electrode 130, the possibility of charge-up on the insulator film 160 is reduced.
By applying an arbitrary voltage to the deflection electrode 130 from the power source 180, the charged beam passing through the through hole 120 is deflected.
In addition, although the deflector 100 of the present embodiment has two deflection electrodes 130 in one through hole 120, the number of deflection electrodes may be two or more. Furthermore, it is good also as a deflector array by taking the structure which arrange | positions the deflector 100 in the shape of a line or a two-dimensional array on a board | substrate.

Next, a manufacturing method of the deflector 100 shown in FIG. 1 will be described with reference to FIGS. 2 (a) to 2 (k) and FIGS. 3 (l) to (r).
In the step of FIG. 2A, a silicon wafer 201 to be the substrate 110 of FIG. 1 is prepared.
In the step of FIG. 2B, a silicon dioxide film 202 is formed by a thermal oxidation method.
In the step of FIG. 2C, photolithography is performed, and then the silicon dioxide film 202 is etched with hydrofluoric acid.
In the step of FIG. 2D, reactive ion etching is performed on silicon to form the first opening 203.

In the step of FIG. 2E, after removing the silicon dioxide film once with hydrofluoric acid, a silicon dioxide film 220 to be the insulating layer 150 in FIG. 1 is formed again by thermal oxidation, and a substrate having a conductive layer 204 is further formed. Paste with 205.
In the step of FIG. 2F, copper 206 is embedded in the first opening 203 by copper electroplating.
In the step of FIG. 2G, chemical mechanical polishing (CMP) is performed to flatten the copper 206.
In the process of FIG. 2H, copper 206 is further grown by plating in a resist mold 207 formed by photolithography. The copper 206 is a metal body that becomes the deflection electrode 130 of FIG.
In the step of FIG. 2I, the bonded substrate 205 is removed, and the resist mold 207 is removed.

A resist mask 208 is formed by photolithography in the step of FIG. 2 (j), and then a portion of the silicon dioxide film 220 where the second opening 217 is to be formed in the step of FIG. To do.
In the step of FIG. 2 (k), a sacrificial layer 209 is formed by photolithography, and further a conductor film 210 to be the wiring 140 of FIG. 1 is formed thereon by vapor deposition.
By removing the sacrificial layer 209 in the step of FIG. 3L, an unnecessary portion of the conductor film 210 is lifted off.
In the step of FIG. 3M, a silicon nitride film 211 to be the insulator film 160 of FIG. 1 is formed by plasma CVD, and a resist mask 212 is formed thereon by photolithography.
In the step of FIG. 3N, reactive ion etching using an etching gas such as CF ₄ is performed to etch the silicon nitride film 211.

In the step of FIG. 3 (o), after the sacrifice layer 214 is formed by photolithography, a conductor film 215 to be the conductor film 170 of FIG. 1 is formed by vapor deposition.
In the step of FIG. 3 (p), the sacrifice layer 214 is removed, and an unnecessary portion of the conductor film 215 is lifted off.
In the step of FIG. 3 (q), a resist mask 216 is formed by photolithography, and a second opening 217 is formed by reactive ion etching of silicon.
In the step of FIG. 3R, the silicon dioxide film remaining on the side wall of the second opening 217 is etched with hydrofluoric acid. 1 is formed, and the front surface 130a of the deflection electrode 130 is exposed on the side wall of the through hole 120, whereby the deflector 100 is obtained.

[Second Embodiment]
Next, an electron beam exposure apparatus (drawing apparatus) using a deflector that can be manufactured by the above method as a blanker will be described. Although the following example is an exposure apparatus that employs an electron beam as a charged beam, the present invention can be similarly applied to an exposure apparatus that uses other types of charged beams such as an ion beam.

FIG. 4 is a schematic view of the main part of an electron beam exposure apparatus using a multi-charged beam lens that can be manufactured according to the present invention.
In FIG. 4, reference numeral 1 denotes a multi-source module that forms a plurality of electron source images and emits an electron beam from the electron source images. The multi-source modules 1 are arranged in 3 × 3. It will be described later.
21, 22, 23, and 24 are magnetic lens arrays, and magnetic disks MD having openings of the same shape arranged in 3 × 3 are vertically arranged at intervals and excited by a common coil CC. Is. As a result, each aperture becomes a magnetic pole of each magnetic lens ML, and a lens magnetic field is generated by design.

A plurality of electron source images of each multi-source module 1 are projected on the wafer 4 by the corresponding four magnetic field lenses ML (ML1, ML2, ML3, ML4) of the magnetic lens arrays 21, 22, 23, 24. An optical system that acts on an electron beam before the wafer is irradiated with an electron beam from one multi-source module is defined as a column. That is, a present Example is a structure of 9 columns (col.1-col.9).
At this time, an image is formed once by two magnetic lenses corresponding to the magnetic lens array 21 and the magnetic lens array 22, and then the image is formed by two corresponding magnetic lenses of the magnetic lens array 23 and the magnetic lens array 24. Projecting onto the wafer 4. Then, by individually controlling the excitation conditions of the magnetic lens arrays 21, 22, 23, and 24 with a common coil, the optical characteristics (focal position, image rotation, magnification) of each column are substantially uniform. In other words, the same amount can be adjusted.
A main deflector 3 deflects a plurality of electron beams from the multi-source module 1 and displaces a plurality of electron source images in the X and Y directions on the wafer 4.
Reference numeral 5 denotes a stage on which the wafer 4 is mounted and is movable in the XY direction orthogonal to the optical axis AX (Z axis) and the rotation direction around the Z axis, and a stage reference plate 6 is fixedly provided.
Reference numeral 7 denotes a reflected electron detector that detects reflected electrons generated when a mark on the stage reference plate 6 is irradiated by an electron beam.

Next, FIG. 5 is a diagram for explaining functions of the multi-source module 1 of the apparatus of FIG. The function of adjusting the optical characteristics of the electron beam irradiated onto the wafer 4 from the multi-source module 1 and the multi-module 1 will be described with reference to FIG.
In FIG. 5, reference numeral 501 denotes an electron source (crossover image) formed by an electron gun. The electron beam emitted from the electron source 501 is converted into a substantially parallel electron beam by the condenser lens 502. The condenser lens 502 of the present embodiment is an electrostatic lens composed of three aperture electrodes.
503 is an aperture array formed by two-dimensionally arranging apertures, 504 is a lens array formed by two-dimensionally arranging electrostatic lenses having the same optical power, and 505 and 506 can be driven individually. A deflector array 507 is formed by two-dimensionally arraying electrostatic eight-pole deflectors, and is a blanker array formed by two-dimensionally arraying electrostatic blankers that can be individually driven. In this embodiment, the deflector according to the present invention is used as a blanker array 507.

FIG. 6 is a detailed view of one column. The function of adjusting the optical characteristics of the electron beam irradiated onto the wafer 4 from the multi-source module 1 and the multi-module 1 will be described with reference to FIG.
The substantially parallel electron beam from the condenser lens 502 is divided into a plurality of electron beams by the aperture array 503. The divided electron beam forms an intermediate image of the electron source on the corresponding blanker of the blanker array 507 via the electrostatic lens of the corresponding lens array 504.
At this time, the deflector arrays 505 and 506 individually adjust the position of the intermediate image of the electron source formed on the blanker array 507 (the position in the plane orthogonal to the optical axis). Further, since the electron beam deflected by the blanker array 507 is blocked by the blanking aperture AP in FIG. 5, the wafer 4 is not irradiated. On the other hand, the electron beam that is not deflected by the blanker array 507 is not blocked by the blanking aperture AP in FIG.

Returning to FIG. 5, a plurality of intermediate images of the electron source formed by the multi-source module 1 are projected onto the wafer 4 through two magnetic field lenses corresponding to the magnetic field lens array 21 and the magnetic field lens array 22.
At this time, among the optical characteristics when a plurality of intermediate images are projected onto the wafer 4, the rotation and magnification of the image can be adjusted by deflector arrays 505 and 506 that can adjust the position of each intermediate image on the blanker array. The focal position can be adjusted by dynamic focus lenses (electrostatic or magnetic lens) 508 and 509 provided for each column.

Next, a system configuration diagram of this embodiment is shown in FIG.
The blanker array control circuit 41 is a circuit that individually controls a plurality of blankers that constitute the blanker array 507, the deflector array control circuit 42 is a circuit that individually controls the deflectors that constitute the deflector arrays 505 and 506, and D_FOCUS. The control circuit 43 is a circuit that individually controls the dynamic focus lenses 508 and 509, the main deflector control circuit 44 is a circuit that controls the main deflector 3, and the reflected electron detection circuit 45 is a signal from the reflected electron detector 7. Is a circuit for processing. These blanker array control circuit 41, deflector array control circuit 42, D_FOCUS control circuit 43, main deflector control circuit 44, and backscattered electron detection circuit 45 are provided as many as the number of columns (col. 1 to col. 9). Has been.
The magnetic lens array control circuit 46 controls the common coils of the magnetic lens arrays 21, 22, 23, and 24, and the stage drive control circuit 47 cooperates with a laser interferometer (not shown) that detects the position of the stage. The control circuit that drives and controls the stage 5. The main control system 48 controls the plurality of control circuits and manages the entire electron beam exposure apparatus.
In this embodiment, an example in which the deflector according to the present invention is used as a blanker has been described. However, the deflector according to the present invention may be used as a deflector array.

[Third embodiment]
FIGS. 8A and 8B are schematic views of a deflector 700 according to the third embodiment of the present invention, in which FIG. 8A is a top view and FIG. Is shown.
The deflector 700 is a deflector that deflects one charged beam, and includes a through-hole 720 through which a charged beam passes in a substrate 710. Two deflection electrodes 730 are disposed on the side wall of the through hole 720 so as to face each other. The wiring 740 is in electrical contact with a surface (rear surface) 730 b facing the surface (front surface) 730 a facing the through-hole 720 of the deflection electrode 730. For this reason, it is possible to make contact with a wider area than in the case of wiring only on the end face (upper face 730c and / or bottom face (upper and lower faces in FIG. 7B) 730d) of the deflection electrode 730. More stable electrical contact can be made.

An insulating layer 750 is formed between the wiring 740 and the substrate 710, and between the deflection electrode 730 and the substrate 710. Further, an insulator film 760 and a conductor film 770 are formed on the wiring 740. Thus, the influence on the charged beam due to the electric field generated from the wiring 740 can be reduced. Further, by disposing the insulator film 760 in a space sandwiched between the upper surface 730c and the bottom surface 730d of the deflection electrode 730, the possibility of charge-up on the insulator film 760 is reduced.
By applying an arbitrary voltage to the deflection electrode 730 from the power source 780, the charged beam passing through the through hole 720 is deflected.

Although the deflector 700 of the present embodiment has two deflection electrodes 730 in one through hole 720, the number of deflection electrodes may be two or more.
Furthermore, it is good also as a deflector array by taking the structure which arrange | positions the deflector 700 on a board | substrate in the shape of a line or a two-dimensional array.
The deflector exemplarily described here is also a blanker in a charged beam exposure apparatus such as the electron beam exposure apparatus exemplarily shown in FIG. 3 as the second embodiment, as in the first embodiment. It may be used as a deflector array.

  The deflector of the present embodiment can be manufactured by the same method as in the deflector manufacturing method of the first embodiment, except that the process of FIG. That is, in the step of FIG. 2H, instead of further growing the copper 206 by plating, at least a portion near the copper 206 on the surface of the substrate 201 is etched in the thickness direction of the substrate 201 to thereby deflect the deflection electrode 730 of FIG. The metal body 206 is projected from the surface of the substrate 201. As a result, the back surface 730b of the deflection electrode 730 is exposed as shown in FIG. 2I, and the wiring 740 can come into contact with the back surface 730b of the deflection electrode 730 as shown in FIG.

  According to the first and third embodiments described above, even in a deflector that has been reduced in size and increased in density, it is possible to stably make electrical contact with the electrode, and the insulator on the wiring A highly reliable deflector with a low possibility of charge-up of the film can be provided. Further, by using this deflector in a charged beam exposure apparatus as shown in the second embodiment, a highly reliable exposure apparatus can be provided.

[Fourth embodiment]
Next, an embodiment of a device production method using the electron beam exposure apparatus described above will be described.
FIG. 9 shows a flow of manufacturing a microdevice (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.). In step 1 (circuit design), circuit design of a micro device, for example, a semiconductor device is performed. In step 2 (EB data conversion), exposure control data for the exposure apparatus is created based on the designed circuit pattern. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the wafer and the exposure apparatus to which the prepared exposure control data is input. The next step 5 (assembly) is referred to as a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), and the like. including. In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, the semiconductor device is completed and shipped (step 7).

FIG. 10 shows a detailed flow of the wafer process. In step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern is printed onto the wafer by exposure using the exposure apparatus described above. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeatedly performing these steps, multiple circuit patterns are formed on the wafer.
By using the manufacturing method of the present embodiment, a highly integrated microdevice that has been difficult to manufacture can be manufactured at low cost.

[Scope of invention]
In the above description, an example in which the present invention is applied to a deflector constituting a blanker has been shown. However, the present invention can also be applied to a deflector constituting an electron lens that converges or diverges charged particles. In the above description, an example in which deflectors are arranged for 9 columns of 3 × 3 is shown, but the number of columns is not limited. Currently, thousands to thousands of columns are common. In the above description, an example of a deflector array in which the deflectors 100 or 700 are arranged in a matrix (two-dimensional array) is shown. However, even if the deflectors are arranged in a line (one-dimensional array). Good.

It is a figure explaining the structure of the deflector which concerns on the 1st Example of this invention. It is a figure explaining the manufacturing method of the deflector of FIG. It is a figure explaining the manufacturing method of the deflector of FIG. It is a figure which shows the principal part outline of the electron beam exposure apparatus which concerns on the 2nd Example of this invention. It is a figure explaining the function of the multi source module of the apparatus of FIG. It is a figure explaining the electron optical system for every column of the apparatus of FIG. It is a figure explaining the system configuration | structure of the apparatus of FIG. It is a figure explaining the structure of the deflector which concerns on the 3rd Example of this invention. It is a figure explaining the flow of the manufacturing process of the device which concerns on the 4th Example of this invention. It is a figure explaining the wafer process in FIG. It is a figure explaining the background art of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Multi-source module 3 Main deflector 4 Wafer 5 Stage 6 Stage reference plate 21, 22, 23, 24 Magnetic lens array 41 Blanker array control circuit 42 Deflector array control circuit 43 D_FOCUS control circuit 44 Main deflection control circuit 45 Reflected electron detection Circuit 46 Magnetic lens array control circuit 47 Stage drive control circuit 48 Main control system 100 Deflector 110 Substrate 120 Through-hole 130 Deflection electrode 130a Deflection electrode front surface 130b Deflection electrode back surface 130c Deflection electrode upper surface 130d Deflection electrode bottom surface 140 Wiring 150 Insulating layer 160 Insulator film 170 Conductor film 180 Power supply 201 Silicon wafer 202 Silicon dioxide film 203 First opening 204 Conductive layer 205 Substrate 206 Copper 207 Resist mold 208 Resist mask 209 Sacrificial Layer 210 Conductor film 211 Silicon nitride film 212 Resist mask 214 Sacrificial layer 215 Conductor film 216 Resist mask 217 Second aperture 218 Deflector 220 Silicon dioxide film 501 Electron source 502 Condenser lens 503 Aperture array 504 Lens array 505 and 506 Deflection Array 507 Blanker array 508, 509 Dynamic focus lens 700 Deflector 710 Substrate 720 Through-hole 730 Deflection electrode 740 Wiring 750 Insulating layer 760 Insulator film 770 Conductor film 780 Power supply ML1, ML2, ML3, ML4 Magnetic lens MD Magnetic body circle Plate CC common coil

Claims (13)

An electrode substrate comprising a substrate having a through hole, an electrode installed on a side wall of the through hole, and a wiring for applying a voltage to the electrode,
The wiring board is in contact with a back surface of a surface of the electrode facing the through hole.   An insulator film is provided on at least a part of a portion of the wiring formed along the surface of the substrate, and an electrically grounded conductor film is provided on the insulator film. The electrode substrate according to claim 1.   The portion of the insulator film exposed from the conductor film is located between two end faces of the electrode in the axial direction in the axial direction of the through hole. The electrode substrate as described.   The electrode substrate according to claim 1, wherein the substrate is a conductor or a semiconductor, and the substrate includes an insulating layer at a contact surface between the wiring and the substrate.   The electrode substrate according to claim 1, wherein the substrate is a conductor or a semiconductor, and the substrate includes an insulating layer at a contact surface between the electrode and the substrate.   6. The electrode substrate according to claim 1, wherein a plurality of sets of the through-holes and the electrodes are arranged one-dimensionally or two-dimensionally. The method for manufacturing an electrode substrate according to claim 1, comprising a substrate having a through hole, a pair of electrodes installed on a side wall of the through hole, and a wiring for applying a voltage to the electrode. And
A first step of forming a plurality of first apertures in the substrate corresponding to the shape and arrangement of the set of electrodes;
A second step of filling each of the plurality of first openings with a metal to form a metal body to be the electrode;
A third step of projecting the metal body to be the electrode from the surface of the substrate;
A fourth step of forming the wiring in contact with a surface to be a back surface of a surface facing the through hole in a portion of the metal body to be the electrode protruding from the substrate surface;
A second opening corresponding to a shape in which the one set of electrodes is arranged in the through hole is formed in a portion including between and in the vicinity of the plurality of first openings, and a side surface of the metal body is formed in the through hole. And a fifth step of exposing the electrode substrate.   The manufacturing method according to claim 7, wherein the third step is a step of further growing a metal body to be an electrode formed in the second step by plating and projecting from the substrate surface.   The third step is a step of projecting from the surface of the substrate a metal body to be an electrode formed in the second step by etching at least a part of the surface of the substrate in the thickness direction of the substrate. The manufacturing method according to claim 7.   10. The method according to claim 7, wherein the substrate is a conductor or a semiconductor, and further includes a sixth step of forming an insulating layer on at least a side wall of the first hole after the first step. The manufacturing method as described in.   The said board | substrate is a conductor or a semiconductor, It further includes the 7th process of forming an insulating layer in the part which contacts the said wiring at least before the said 4th process. The manufacturing method as described in one. A charged beam exposure apparatus for exposing a substrate to be exposed using a charged beam,
A charged particle source emitting a charged beam;
A first electron optical system for forming a plurality of intermediate images of the charged particle source;
A second electron optical system that projects a plurality of intermediate images formed by the first electron optical system onto a substrate to be exposed;
A positioning device for holding and positioning the substrate to be exposed and driving to a predetermined position;
A charged beam exposure apparatus, wherein the first electron optical system includes the electrode substrate according to claim 1.   A device manufacturing method, wherein a device is manufactured using the charged beam exposure apparatus according to claim 12.