JP4076834B2 - Deflector, deflector manufacturing method, and charged particle beam exposure apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a charged particle beam exposure apparatus that exposes a wafer to a pattern such as a semiconductor integrated circuit. In particular, the present invention relates to a deflector of a charged particle beam exposure apparatus that exposes a pattern using a plurality of charged particle beams, and a method of manufacturing the deflector.
[0002]
[Prior art]
In recent years, with the progress of miniaturization of semiconductor devices, various lithography means of 100 nm or less have been proposed, and further, high resolution, highly accurate drawing pattern superposition, and high throughput are required. For this reason, an electron beam exposure apparatus with potentially higher resolution and better dimensional controllability than other exposure means can generate an exposure pattern electrically and directly expose the wafer. It is also expected as a means.
[0003]
However, the electron beam exposure apparatus has a problem that the exposure area per shot is small and the throughput is low, and the actual situation is that it is not widely used for mass production of semiconductor devices. In order to solve this problem, a multi-electron beam exposure apparatus that simultaneously exposes a wafer with a plurality of electron beams has been proposed.
[0004]
In such a multi-electron beam exposure apparatus, a blanking aperture array device that switches whether or not to deflect a plurality of electron beams independently, and an electron beam deflected by the blanking aperture array device are blocked from the wafer. An electron beam shielding unit is provided to control with high accuracy whether or not each of the plurality of electron beams is irradiated onto the wafer. Such a blanking aperture array device includes a substrate such as a semiconductor provided with a plurality of openings, a deflection electrode provided in each of the openings, and an insulating layer that insulates the substrate and the deflection electrode. Whether or not to deflect the electron beam passing through the aperture is controlled depending on whether or not a voltage is applied.
[0005]
[Problems to be solved by the invention]
However, in the structure of the conventional blanking aperture array device, a part of the substrate and the insulating layer is exposed on the inner wall of the opening through which the electron beam passes. For this reason, the oxide film or insulating layer of the substrate exposed on the inner wall at the opening is charged up, which affects the electron beam passing through the opening. As a result, appropriate deflection and position control of the electron beam are not performed, and it becomes difficult to accurately expose the wafer.
[0006]
Therefore, an object of the present invention is to provide a deflector, a method of manufacturing the deflector, and a charged particle beam exposure apparatus that can solve the above-described problems. This object is achieved by a combination of features described in the independent claims. The dependent claims define further advantageous specific examples of the present invention.
[0007]
[Means for Solving the Problems]
  That is, according to the first aspect of the present invention,The deflectorA deflector for deflecting a charged particle beam, provided with an opening through which the charged particle beam passes;A conductive film is formed on the back sideIn the direction substantially perpendicular to the direction from the first deflecting electrode to the second deflecting electrode, the first deflecting electrode and the second deflecting electrode provided facing the inside of the opening to deflect the charged particle beam. A first conductive layer and a second conductive layer which are provided facing each other and made of a material having higher conductivity than the substrate;A first insulating layer and a second insulating layer provided between the first and second deflection electrodes and the substrate, respectively;WithIn the direction from the first deflection electrode to the second deflection electrode and the direction substantially perpendicular to the irradiation direction of the electron beam, the lengths of the first insulating layer and the second insulating layer are the lengths of the first deflection electrode and the second deflection electrode. Shorter than.
[0008]
  The first conductive layer and the second conductive layer may be formed of a material having higher conductivity than the substrate.The first conductive layer and the second conductive layer may be grounded. The first conductive layer and the second conductive layer may be formed by metal plating. The first conductive layer and the second conductive layer may be thinner than the first deflection electrode and the second deflection electrode. The interval between the first deflection electrode and the second deflection electrode may be smaller than the interval between the first conductive layer and the second conductive layer.
[0009]
  The semiconductor device further includes a first insulating layer and a second insulating layer provided between the first deflecting electrode and the second deflecting electrode and the substrate, respectively, wherein the substrate is a silicon substrate, and the first insulating layer and the second insulating layer are Alternatively, it may be a silicon oxide film formed by thermally oxidizing a silicon substrate.The first insulating layer and the second insulating layer may be in a position shielded by the first deflection electrode and the second deflection electrode with respect to a path through which the electron beam passes. The widths of the first insulating layer and the second insulating layer may be shorter than the widths of the first conductive layer and the second conductive layer in the direction from the first deflection electrode to the second deflection electrode.
[0010]
The semiconductor device further includes a first insulating layer and a second insulating layer provided between the first deflecting electrode and the second deflecting electrode and the substrate, respectively, and the first conductive layer and the second conductive layer are adjacent to the first insulating layer. It may be provided from a position to a position adjacent to the second insulating layer. The first conductive layer and the second conductive layer may be provided from the upper end to the lower end of the opening so as not to expose the substrate in the opening.
[0011]
  The first deflection electrode and the second deflection electrode may have a larger area on the surface facing the other deflection electrode than the area on the surface facing the substrate. The first deflection electrode and the second deflection electrode may be in the shape of a trapezoidal column that gradually decreases along the direction of the inner wall of the opening from the center of the opening.In a direction substantially perpendicular to the direction from the first deflection electrode to the second deflection electrode, the widths of the surfaces of the first deflection electrode and the second deflection electrode facing the substrate are equal to or greater than the widths of the first insulating layer and the second deflection electrode. It may be.
[0012]
  The semiconductor device further includes a third insulating layer and a fourth insulating layer provided between the first conductive layer and the second conductive layer, respectively, and the substrate is a silicon substrate, and the third insulating layer and the fourth insulating layer are Alternatively, it may be a silicon oxide film formed by thermally oxidizing a silicon substrate.The conductive film may be formed of a Cr / Au / Cr laminated film.
[0013]
According to a second aspect of the invention,The manufacturing method of the deflector is[Claim 18]
  A substrate provided with an opening through which a charged particle beam passes, a first deflection electrode and a second deflection electrode provided facing the opening to deflect the charged particle beam,A first insulating layer and a second insulating layer provided between the first deflection electrode and the second deflection electrode and the substrate, respectively;A method of manufacturing a deflector comprising a first conductive layer and a second conductive layer provided facing each other in an opening in a direction substantially perpendicular to a direction from the first deflection electrode to the second deflection electrode,The first insulation layer and the second insulation are shorter in length from the first deflection electrode to the second deflection electrode and in a direction substantially perpendicular to the electron beam irradiation direction than the lengths of the first deflection electrode and the second deflection electrode. Forming an insulating layer to form a layer;An electrode forming step for forming the first deflection electrode and the second deflection electrode, and a plurality of layers for forming the first conductive layer and the second conductive layer after forming the first deflection electrode and the second deflection electrode in the electrode formation step. Forming an opening on the substrate, and forming a conductive layer in each of the plurality of openings formed in the opening forming step.Forming a conductive film on the back surface of the substrate;Is provided.In the conductive layer forming step, the first conductive layer and the second conductive layer may be formed of a material having higher conductivity than the substrate. In the insulating layer forming step, the first insulating layer and the second insulating layer may be formed at positions shielded by the first deflection electrode and the second deflection electrode with respect to a path through which the electron beam passes. In the insulating layer forming step, the width of the first insulating layer and the second insulating layer may be shorter than the width of the first conductive layer and the second conductive layer in the direction from the first deflection electrode to the second deflection electrode. Good. In the electrode formation step, the widths of the surfaces of the first deflection electrode and the second deflection electrode facing the substrate in the direction substantially perpendicular to the direction from the first deflection electrode to the second deflection electrode are set to the first insulating layer and the second deflection electrode. You may form more than the width | variety of a deflection electrode. In the step of forming the conductive film, the conductive film may be formed of a Cr / Au / Cr laminated film.
[0014]
  According to a third aspect of the invention,The manufacturing method of the deflector isA substrate provided with an opening through which a charged particle beam passes, a first deflection electrode and a second deflection electrode provided facing the opening to deflect the charged particle beam, and a first deflection electrode and a second deflection. The first insulating layer and the second insulating layer provided between the electrode and the substrate, respectively, and provided in the opening in a direction substantially perpendicular to the direction from the first deflection electrode to the second deflection electrode. A method of manufacturing a deflector comprising a first conductive layer and a second conductive layer, and a third insulating layer and a fourth insulating layer provided between the first conductive layer and the second conductive layer and the substrate, respectively. Forming a plurality of openings for forming the first deflection electrode, the second deflection electrode, the first conductive layer, and the second conductive layer in the substrate, respectively, and the plurality of openings formed in the opening formation stage On the inner wall ofThe length is shorter than the length of the first deflection electrode and the second deflection electrode in the direction from the first deflection electrode to the second deflection electrode and in the direction substantially perpendicular to the electron beam irradiation direction.First insulating layerandThe second insulation layerForming,Third insulating layerandThe first deflection electrode is formed inside each of the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer in the insulating layer forming step of forming the fourth insulating layer and each of the plurality of openings. Forming the second deflection electrode, the first conductive layer, and the second conductive layer, respectivelyForming a conductive film on the back surface of the substrate;Is provided. The insulating layer forming step may include a step of forming the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer by thermally oxidizing the inner walls of the plurality of openings.In the electrode formation step, the first conductive layer and the second conductive layer may be formed of a material having higher conductivity than the substrate. In the insulating layer forming step, the first insulating layer and the second insulating layer may be formed at positions shielded by the first deflection electrode and the second deflection electrode with respect to a path through which the electron beam passes. In the insulating layer forming step, the width of the first insulating layer and the second insulating layer may be shorter than the width of the first conductive layer and the second conductive layer in the direction from the first deflection electrode to the second deflection electrode. Good. In the electrode formation step, the widths of the surfaces of the first deflection electrode and the second deflection electrode facing the substrate in the direction substantially perpendicular to the direction from the first deflection electrode to the second deflection electrode are set to the first insulating layer and the second deflection electrode. You may form more than the width | variety of a deflection electrode. In the step of forming the conductive film, the conductive film may be formed of a Cr / Au / Cr laminated film.
[0015]
  According to a fourth aspect of the invention,Charged particle beam exposure equipmentA charged particle beam exposure apparatus that exposes a wafer with a charged particle beam, comprising: a charged particle beam generating unit that generates a charged particle beam; and a deflector that deflects the charged particle beam to irradiate a desired position on the wafer. The deflector is provided with an aperture through which the charged particle beam should pass,A conductive film is formed on the back sideIn the direction substantially perpendicular to the direction from the first deflecting electrode to the second deflecting electrode, the first deflecting electrode and the second deflecting electrode provided facing the inside of the opening to deflect the charged particle beam. A first conductive layer and a second conductive layer which are provided facing each other and made of a material having higher conductivity than the substrate;A first insulating layer and a second insulating layer provided between the first and second deflection electrodes and the substrate, respectively;HaveIn the direction from the first deflection electrode to the second deflection electrode and the direction substantially perpendicular to the irradiation direction of the electron beam, the lengths of the first insulating layer and the second insulating layer are the lengths of the first deflection electrode and the second deflection electrode. Shorter than.The first conductive layer and the second conductive layer may be formed of a material having higher conductivity than the substrate. The first insulating layer and the second insulating layer may be in a position shielded by the first deflection electrode and the second deflection electrode with respect to a path through which the electron beam passes. The widths of the first insulating layer and the second insulating layer may be shorter than the widths of the first conductive layer and the second conductive layer in the direction from the first deflection electrode to the second deflection electrode. In a direction substantially perpendicular to the direction from the first deflection electrode to the second deflection electrode, the widths of the surfaces of the first deflection electrode and the second deflection electrode facing the substrate are equal to or greater than the widths of the first insulating layer and the second deflection electrode. It may be. The first deflecting electrode and the second deflecting electrode are formed by forming a Cr film on the surfaces of the first insulating layer and the second insulating layer exposed in the plurality of openings by sputtering, and then conducting the conductive material inside the Cr film in the plurality of openings. It may be formed by filling a material. The conductive film may be formed of a Cr / Au / Cr laminated film.
[0016]
The above summary of the invention does not enumerate all the necessary features of the present invention, and sub-combinations of these feature groups can also be the invention.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described through embodiments of the invention. However, the following embodiments do not limit the invention according to the claims, and all combinations of features described in the embodiments are included. It is not necessarily essential for the solution of the invention.
[0018]
FIG. 1 shows an example of the configuration of an electron beam exposure apparatus 100 according to an embodiment of the present invention. The electron beam exposure apparatus 100 is an example of a charged particle beam exposure apparatus of the present invention. The charged particle beam exposure apparatus of the present invention may be an ion beam exposure apparatus that exposes a wafer with an ion beam. Further, the electron beam exposure apparatus 100 may generate a plurality of electron beams at a narrow interval, for example, an interval such that all the electron beams are irradiated onto a region of one chip to be provided on the wafer.
[0019]
The electron beam exposure apparatus 100 includes an exposure unit 150 for performing a predetermined exposure process on the wafer 44 by an electron beam, and a control unit 140 for controlling the operation of each component included in the exposure unit 150.
[0020]
The exposure unit 150 generates a plurality of electron beams inside the housing 8 and forms an electron beam cross-sectional shape as desired, and whether to irradiate the wafer 44 with the plurality of electron beams. An irradiation switching means 112 that switches independently for each electron beam, an electron optical system that includes a wafer projection system 114 that adjusts the orientation and size of the pattern image transferred to the wafer 44, and a wafer 44 on which the pattern is to be exposed. And a stage system having a wafer stage 46 to be placed and a wafer stage driving unit 48 for driving the wafer stage 46.
[0021]
The electron beam shaping means 110 includes an electron beam generator 10 that generates a plurality of electron beams, a first forming member 14 having a plurality of openings that shape the cross-sectional shape of the electron beam by passing the electron beam, and a first forming member 14. A second multi-member 22, a first multi-axis electron lens 16 that focuses a plurality of electron beams independently, and adjusts the focus of the electron beam; and a first multi-beam electron beam that passes through the first member 14 is independently deflected. The first shaping deflection unit 18 and the second shaping deflection unit 20 are included. The electron beam generator 10 is an example of a charged particle beam generator of the present invention. The 1st shaping | molding deflection | deviation part 18 and the 2nd shaping | molding deflection | deviation part 20 are examples of the deflector of this invention.
[0022]
The electron beam generator 10 includes a plurality of electron guns 104 and a base material 106 on which the electron guns 104 are formed. The electron gun 104 includes a cathode 12 that generates thermoelectrons and a grid 102 that is formed so as to surround the cathode 12 and stabilizes the thermoelectrons generated at the cathode 12. The electron beam generator 10 forms an electron gun array by having a plurality of electron guns 104 provided at predetermined intervals on a base material 106.
[0023]
The first molding member 14 and the second molding member 22 desirably have a grounded metal film such as platinum on the surface irradiated with the electron beam. The cross-sectional shapes of the plurality of openings included in the first molding member 14 and the second molding member 22 may have a spread along the irradiation direction of the electron beam in order to efficiently pass the electron beam. The plurality of openings included in the first molding member 14 and the second molding member 22 are preferably formed in a rectangular shape.
[0024]
The irradiation switching means 112 converges a plurality of electron beams independently, adjusts the focus of the electron beam, and deflects the electron beams independently for each electron beam. A blanking aperture array device 26 that switches whether to irradiate the wafer 44 independently for each electron beam, and an electron beam that is deflected by the blanking aperture array device 26 and includes a plurality of openings that allow the electron beam to pass therethrough. And an electron beam shielding member 28 for shielding the light. The blanking aperture array device 26 is an example of a deflector of the present invention.
[0025]
The blanking aperture array device 26 includes a substrate provided with an opening through which an electron beam passes and a plurality of deflection electrodes provided in the opening. In addition, the cross-sectional shape of the plurality of openings included in the electron beam shielding member 28 may have a spread along the irradiation direction of the electron beam in order to efficiently pass the electron beam.
[0026]
The wafer projection system 114 focuses the plurality of electron beams independently, and a third multi-axis electron lens 34 that reduces the irradiation diameter of the electron beam and the plurality of electron beams independently, and adjusts the focus of the electron beam. The fourth multi-axis electron lens 36, the sub-deflecting unit 38, which is an independent deflecting unit for independently deflecting a plurality of electron beams to a desired position of the wafer 44 for each electron beam, and the first for focusing the electron beam. It has a coaxial lens 52 having a coil 40 and a second coil 50 and functioning as an objective lens, and a main deflection unit 42 which is a common deflection unit for deflecting a plurality of electron beams by a desired amount in substantially the same direction. The main deflection unit 42 is an example of a deflector according to the present invention.
[0027]
The main deflection unit 42 is preferably an electrostatic deflector capable of deflecting a plurality of electron beams at high speed using an electric field, and has opposing deflection electrodes. Further, the main deflection section 42 may have a cylindrical uniform octapole configuration including four sets of opposing deflection electrodes, or a configuration including eight or more deflection electrodes. The blanking aperture array device 26 has a pair of opposing deflection electrodes. The coaxial lens 52 is preferably provided in the vicinity of the wafer 44 from the fourth multi-axis electron lens 36.
[0028]
The control unit 140 includes an overall control unit 130 and an individual control unit 120. The individual control unit 120 includes an electron beam control unit 80, a multi-axis electron lens control unit 82, a shaping deflection control unit 84, a blanking aperture array control unit 86, a coaxial lens control unit 90, a sub deflection control unit 92, and a main deflection control unit. 94 and a wafer stage control unit 96. The overall control unit 130 is a workstation, for example, and performs overall control of each control unit included in the individual control unit 120.
[0029]
The electron beam control unit 80 controls the electron beam generation unit 10. The multi-axis electron lens control unit 82 controls the current supplied to the first multi-axis electron lens 16, the second multi-axis electron lens 24, the third multi-axis electron lens 34, and the fourth multi-axis electron lens 36. The shaping deflection control unit 84 controls the first shaping deflection unit 18 and the second shaping deflection unit 20. The blanking aperture array control unit 86 controls the voltage applied to the deflection electrodes included in the blanking aperture array device 26. The coaxial lens control unit 90 controls the current supplied to the first coil 40 and the second coil 50 included in the coaxial lens 52. The main deflection control unit 94 controls the voltage applied to the deflection electrodes included in the main deflection unit 42. The wafer stage control unit 96 controls the wafer stage driving unit 48 to move the wafer stage 46 to a predetermined position.
[0030]
The operation of the electron beam exposure apparatus 100 will be described. First, the electron beam generator 10 generates a plurality of electron beams. The electron beam generated by the electron beam generator 10 is irradiated onto the first forming member 14 and formed. The plurality of electron beams that have passed through the first shaping member 14 each have a rectangular cross-sectional shape corresponding to the shape of the opening included in the first shaping member 14.
[0031]
The first multi-axis electron lens 16 independently focuses a plurality of rectangular shaped electron beams and performs focus adjustment of the electron beam on the second shaping member 22 independently for each electron beam. The 1st shaping | molding deflection | deviation part 18 deflects the several electron beam shape | molded by the rectangle to a desired position with respect to a 2nd shaping | molding member independently for every electron beam. The second shaping deflection unit 20 deflects the plurality of electron beams deflected by the first shaping deflection unit 18 in a substantially vertical direction with respect to the second shaping member 22 independently for each electron beam. As a result, the electron beam is adjusted so as to irradiate the second molding member 22 at a desired position substantially perpendicularly to the second molding member 22. The second forming member 22 including a plurality of openings having a rectangular shape has a desired rectangular cross-sectional shape to be irradiated to the wafer 44 by a plurality of electron beams having a rectangular cross-sectional shape irradiated to each opening. Further shaping into an electron beam.
[0032]
The second multi-axis electron lens 24 independently focuses a plurality of electron beams and performs focus adjustment of the electron beams on the blanking aperture array device 26 independently for each electron beam. The electron beam whose focus is adjusted by the second multi-axis electron lens 24 passes through a plurality of openings included in the blanking aperture array device 26.
[0033]
The blanking aperture array control unit 86 controls whether or not to apply a voltage to the deflection electrode provided in each opening formed in the blanking aperture array device 26. The blanking aperture array device 26 switches whether to irradiate the wafer 44 with the electron beam based on the voltage applied to the deflection electrode. When a voltage is applied to the deflection electrode, the electron beam that has passed through the opening of the blanking aperture array device 26 is deflected, cannot pass through the opening included in the electron beam shielding member 28, and is not irradiated onto the wafer 44. When no voltage is applied to the deflection electrode, the electron beam that has passed through the opening of the blanking aperture array device 26 is not deflected, can pass through the opening included in the electron beam shielding member 28, and the electron beam is irradiated onto the wafer 44. .
[0034]
The third multi-axis electron lens 34 reduces the diameter of the electron beam that is not deflected by the blanking aperture array device 26 and allows the opening included in the electron beam shielding member 28 to pass therethrough. The fourth multi-axis electron lens 36 focuses a plurality of electron beams independently, and independently adjusts the electron beam focus on the sub-deflecting unit 38 for each electron beam. The light is incident on a deflector included in the deflecting unit 38.
[0035]
The sub deflection control unit 92 controls a plurality of deflectors included in the sub deflection unit 38 independently. The sub-deflecting unit 38 deflects the plurality of electron beams incident on the plurality of deflectors to a desired exposure position on the wafer 44 independently for each electron beam. The plurality of electron beams that have passed through the sub deflection unit 38 are focused on the wafer 44 by the coaxial lens 52 having the first coil 40 and the second coil 50, and are irradiated onto the wafer 44.
[0036]
During the exposure process, the wafer stage control unit 96 controls the wafer stage driving unit 48 to move the wafer stage 46 in a certain direction. The blanking aperture array control unit 86 determines an aperture through which the electron beam passes based on the exposure pattern data, and performs power control on the deflection electrode provided in each aperture. According to the movement of the wafer 44, the opening through which the electron beam is passed is appropriately changed, and the electron beam is deflected by the main deflection unit 42 and the sub deflection unit 38, whereby a desired circuit pattern can be exposed on the wafer 44. It becomes possible.
[0037]
FIG. 2 shows an example of the configuration of the blanking aperture array device 26. The blanking aperture array device 26 includes a deflection electrode pad 162 and a ground electrode pad 164 that serve as a connecting portion between the aperture section 160 provided with a plurality of openings through which an electron beam passes and the blanking aperture array control section 86 in FIG. And have. The aperture unit 160 is preferably disposed at the center of the blanking aperture array device 26. The deflection electrode pad 162 and the ground electrode pad 164 supply an electrical signal supplied from the blanking aperture array control unit 86 via a probe card, a pogo pin array, or the like to the deflection electrodes provided in the opening of the aperture unit 160. .
[0038]
FIG. 3 shows an example of the configuration of the aperture unit 160. The horizontal direction of the aperture unit 160 is defined as the x-axis direction, and the vertical direction is defined as the y-axis direction. The x axis indicates the direction in which the wafer stage 46 moves the wafer 44 stepwise during the exposure process, and the y axis indicates the direction in which the wafer stage 46 continuously moves the wafer 44 during the exposure process. Specifically, with respect to the wafer stage 46, the y-axis is the direction in which the wafer 44 is scanned and exposed, and the x-axis is the stepwise exposure of the wafer 44 to expose an unexposed area of the wafer 44 after the scanning exposure is completed. It is the direction to move.
[0039]
The aperture portion 160 is provided with openings 200 through which a plurality of electron beams pass. The plurality of openings 200 are arranged so as to expose the entire scanning region. For example, the plurality of openings 200 are arranged so as to cover the entire region between the plurality of openings 200a and 200b located at both ends in the x-axis direction. The openings 200 that are close to each other in the x-axis direction are preferably arranged at a constant interval. At this time, the interval between the plurality of openings 200 is preferably set to be equal to or less than the maximum deflection amount by which the main deflection unit 42 deflects the electron beam.
[0040]
FIG. 4 shows a first embodiment of a specific configuration of the blanking aperture array device 26. FIG. 4 is a plan view of the blanking aperture array device 26 as seen from the back side.
[0041]
The blanking aperture array device 26 includes a substrate 202 provided with an opening 200 through which an electron beam passes, deflection electrodes 204a and 204b provided facing the opening 200 to deflect the electron beam, and a deflection electrode 204a. Conductive layers 206a and 206b provided opposite to each other in the opening 200 in a direction substantially perpendicular to the direction from the electrode to the deflection electrode 204b, and an insulating layer 208a provided between the deflection electrodes 204a and 204b and the substrate 202, respectively. And 208b.
[0042]
The conductive layers 206a and 206b are grounded by being electrically connected to the ground electrode pad 164 shown in FIG. The conductive layers 206 a and 206 b may be connected by being directly wired to the ground electrode pad 164, or may be connected to the ground electrode pad 164 through the substrate 202.
[0043]
The conductive layers 206 a and 206 b are preferably formed using a material having higher conductivity than the substrate 202. The conductive layers 206a and 206b are preferably formed by metal plating. For example, the substrate 202 is a silicon substrate, and the conductive layers 206a and 206b are formed of a material whose main component is Au or Cu.
[0044]
The insulating layers 208a and 208b are oxide films formed by thermally oxidizing the substrate 202, for example, silicon oxide films formed by thermally oxidizing a silicon substrate. In the direction from the deflection electrode 204a to the deflection electrode 204b and the direction substantially perpendicular to the electron beam irradiation direction, the lengths of the insulating layers 208a and 208b are preferably shorter than the lengths of the deflection electrodes 204a and 204b. That is, the insulating layers 208a and 208b are at positions shielded by the deflection electrodes 204a and 204b with respect to the path through which the electron beam passes. Therefore, the insulating layers 208a and 208b can be prevented from being charged up.
[0045]
The distance between the deflection electrode 204a and the deflection electrode 204b is preferably smaller than the distance between the conductive layer 206a and the conductive layer 206b. Further, the conductive layers 206a and 206b may be thinner than the deflection electrodes 204a and 204b. Specifically, the deflection electrodes 204a and 204b are provided at intervals of several tens of μm. Since the distance between the deflection electrode 204a and the deflection electrode 204b is small, the electron beam can be deflected with high accuracy, and the voltage applied to the deflection electrodes 204a and 204b can be reduced.
[0046]
According to the blanking aperture array device 26 of the present embodiment, the conductive layers 206a and 206b are provided on the inner wall of the opening 200, so that the substrate 202 can be prevented from being naturally oxidized. For this reason, an insulating natural oxide film, for example, a silicon oxide film that affects the electron beam by charging up is not formed on the side surface of the opening 200, so that the electron beam can be deflected with high accuracy.
[0047]
FIG. 5 shows a second embodiment of a specific configuration of the blanking aperture array device 26. FIG. 5 is a plan view of the blanking aperture array device 26 as seen from the back side. In the second embodiment, the same components as those in the blanking aperture array device 26 according to the first embodiment are denoted by the same reference numerals, description thereof is omitted or simplified, and different portions are specifically described.
[0048]
The conductive layers 206a and 206b are provided from a position adjacent to the insulating layer 208a to a position adjacent to the insulating layer 208b. That is, the conductive layers 206a and 206b are provided from the surface on which the deflection electrode 204a is provided to the surface on which the deflection electrode 204b is provided on the inner wall of the rectangular opening 200. The conductive layers 206 a and 206 b are provided from the upper end to the lower end of the opening 200 so that the substrate 202 is not exposed in the opening 200. In this case, the conductive layers 206a and 206b and the deflection electrodes 204a and 204b are provided so as not to contact each other.
[0049]
Specifically, the deflection electrodes 204a and 204b have a surface facing the other deflection electrode, that is, a surface facing the electron beam, based on the area of the surface facing the substrate 202, that is, the surface contacting the insulating layers 208a and 208b. It is preferable that the area is larger. For example, the deflection electrodes 204a and 204b have a trapezoidal column shape that gradually narrows in the direction of the inner wall of the opening 200 from the center of the opening 200, that is, the position where the electron beam should pass. Further, in the direction substantially perpendicular to the direction from the deflection electrode 204a to the deflection electrode 204b, the width of the surface of the deflection electrodes 204a and 204b facing the substrate 202 may be equal to or larger than the width of the insulating layers 208a and 208b.
[0050]
According to the blanking aperture array device 26 of the present embodiment, since the conductive layers 206a and 206b are provided so as to cover the inner wall of the opening 200, the influence on the electron beam due to the substrate 202 being charged up is greatly reduced. And the electron beam can be deflected with high accuracy.
[0051]
6, 7 and 8 show an example of a method for manufacturing the blanking aperture array device 26 according to the first embodiment or the second embodiment. 6, 7 and 8 show AA 'cross-sections of the blanking aperture array device 26 shown in FIG. 4 or FIG.
[0052]
First, as shown in FIG. 6A, a substrate 202 is prepared, and silicon nitride films 210a and 210b are formed on the front surface and the back surface of the substrate 202, respectively. At this time, both the silicon nitride films 210a and 210b may be formed at the same time, or one of them may be formed at a time. The substrate 202 is, for example, a silicon wafer having a diameter of 6 inches and a thickness of 200 μm. The silicon nitride films 210a and 210b are formed to a thickness of 1 μm, for example.
[0053]
Next, as shown in FIG. 6B, a resist 212 is applied on the silicon nitride film 210a, exposed and developed, and the resist 212 in the region where the deflection electrodes 204a and 204b are formed is removed. Then, using the resist 212 as an etching mask, the silicon nitride film 210a in the region where the deflection electrodes 204a and 204b are to be formed is removed by etching, for example, reactive ion etching (RIE).
[0054]
Next, as shown in FIG. 6C, the substrate 202 in the portion where the deflection electrodes 204a and 204b are formed is etched, for example, inductively coupled plasma etching, using both or one of the resist 212 and silicon nitride film 210a as an etching mask. A plurality of openings 214 are formed by removal by an (ICP-RIE) method. The silicon nitride film 210b serves as an etching stopper layer when the substrate 202 is etched.
[0055]
Next, as shown in FIG. 6D, after removing the resist 212, insulating layers 208 a and 208 b are formed on the inner walls of the plurality of openings 214 formed in the substrate 202. For example, the insulating layers 208 a and 208 b are formed by thermally oxidizing the inner walls of the plurality of openings 214. Specifically, by selectively thermally oxidizing the exposed silicon surface of the inner wall of the plurality of openings 214 formed in the substrate 202, which is a silicon substrate, other than the portions covered with the silicon nitride films 210a and 210b. Then, insulating layers 208a and 208b which are silicon oxide films are formed.
[0056]
Next, as illustrated in FIG. 6E, a conductive film 216 is formed over the silicon nitride film 210 b and an insulating layer 218 is formed over the conductive film 216. Specifically, a Cr film 50 nm, an Au film 200 nm, and a Cr film 50 nm are formed in this order by an EB vapor deposition method or the like to form a conductive film 216 that is a Cr / Au / Cr laminated film. By forming a Cr / Au / Cr laminated film as the conductive film 216, adhesion between the silicon nitride film 210b and the conductive film 216 can be improved. Further, when there is no problem in the adhesion between the silicon nitride film 210b and the conductive film 216, the conductive film 216 may be a single layer film of an Au film, for example. Then, an insulating layer 218 of a silicon oxide film is formed on the conductive film 216 by a plasma chemical vapor deposition (CVD) method or the like. Note that the silicon nitride film 210b formed in FIG. 6A is provided to electrically insulate the substrate 202 and the conductive film 216 from each other.
[0057]
Next, as shown in FIG. 6F, the portions of the silicon nitride film 210a and the silicon nitride film 210b exposed to the plurality of openings 214 are selectively removed by, for example, the RIE method. At this time, the silicon nitride film 210 b is etched until the conductive film 216 is exposed in the plurality of openings 214 without removing the insulating layers 208 a and 208 b formed on the sidewalls of the plurality of openings 214. Further, the Cr film is etched until the Au film of the conductive film 216 is exposed. In another example, the plurality of openings 214 in the silicon nitride film 210a and the silicon nitride film 210b are not removed by wet etching using hot phosphoric acid without removing the insulating layers 208a and 208b formed on the sidewalls of the plurality of openings 214. After removing the exposed portion, the Cr film of the conductive film 216 may be similarly removed by etching.
[0058]
Next, as shown in FIG. 7A, the Au film of the conductive film 216 is used as a plating electrode (seed layer), and the inside of the plurality of openings 214 is selectively subjected to electrolytic plating to fill and deflect the conductive material. Electrodes 204a and 204b are formed. For example, the deflection electrodes 204a and 204b are formed of Cu, Au, or the like. Then, after forming the deflection electrodes 204a and 204b, the portions protruding from the openings 214 of the conductive material forming the deflection electrodes 204a and 204b are polished and removed by, for example, a chemical mechanical polishing (CMP) method. In another example, after a Cr film is formed on the surfaces of the insulating layers 208a and 208b exposed to the plurality of openings 214 by sputtering, a conductive material is filled inside the Cr film in the plurality of openings 214 to deflect the deflection electrode 204a. And 204b may be formed. Thereby, the adhesion between the deflection electrodes 204a and 204b and the insulating layers 208a and 208b can be improved.
[0059]
Next, as shown in FIG. 7B, a resist 220 is applied on the substrate 202, exposed and developed, and the resist 220 in the region where the conductive layers 206a and 206b are to be formed is removed. Then, using the resist 220 as an etching mask, the portion of the substrate 202 where the conductive layers 206a and 206b are to be formed is selectively removed by etching, for example, RIE to form the opening 222. Then, the portion exposed to the opening 222 of the silicon nitride film 210b is selectively removed by, for example, the RIE method. Further, the Cr film is etched until the Au film of the conductive film 216 is exposed. In another example, the portion exposed to the opening 222 of the silicon nitride film 210b and the Cr film of the conductive film 216 may be removed by wet etching using hot phosphoric acid.
[0060]
Next, as shown in FIG. 7C, the Au film of the conductive film 216 is used as a plating electrode (seed layer), and the conductive material is filled by selectively electrolytically plating the inside of the opening 222 to fill the conductive layer 206a. And 206b. For example, the conductive layers 206a and 206b are formed of Cu or the like. Then, after forming the conductive layers 206a and 206b, the resist 220 is removed, and unnecessary conductive material is polished and removed by, for example, CMP. In another example, after the Cr film is formed on the surface of the substrate 202 exposed to the opening 222 by sputtering, the conductive layers 206a and 206b may be formed by filling the inside of the Cr film of the opening 222 with a conductive material. Good. Thereby, the adhesiveness between the conductive layers 206a and 206b and the substrate 202 can be improved.
[0061]
Next, as shown in FIG. 7D, an insulating layer 224 and a wiring layer 226 are formed on the substrate 202. Specifically, an insulating layer 224 that is a silicon oxide film is formed to a thickness of about 1 μm by plasma CVD or the like. Then, a resist is applied on the insulating layer 224, exposed and developed, and the resist in the upper region such as the deflection electrodes 204a and 204b is removed. Then, the insulating layer 224 is removed by etching, for example, RIE using the resist as an etching mask. Then, after removing the resist, a wiring layer 226 is formed by depositing a Cr film and an Au film in this order on the surface of the insulating layer 224 by a sputtering method.
[0062]
Next, as shown in FIG. 7E, a wiring pattern is formed in the wiring layer 226. Specifically, a resist is applied on the wiring layer 226, exposed and developed, and the resist in a region where no wiring is formed is removed. Then, using the resist as an etching mask, the wiring layer 226 is removed by etching, for example, RIE to form a wiring pattern. Then, the resist is removed.
[0063]
Next, as illustrated in FIG. 8A, the insulating layer 228 and the conductive film 230 are formed over the insulating layer 224 and the wiring layer 226. Specifically, an insulating layer 228 that is a silicon oxide film is formed to a thickness of about 1 μm by plasma CVD or the like. Then, a conductive film 230 is formed by depositing a Cr film and an Au film in this order on the surface of the insulating layer 228 by sputtering. The conductive film 230 functions as a charge-up preventing metal layer such as the insulating layer 228 by being grounded.
[0064]
Next, as shown in FIG. 8B, a resist 232 is applied onto the conductive film 230, exposed and developed, and the resist 232 in the region where the opening 200 through which the electron beam should pass is removed. Then, using the resist 232 as an etching mask, the conductive film 230 is removed by etching, for example, ion milling, and the insulating layers 224 and 228 are removed by etching, for example, RIE.
[0065]
Next, as shown in FIG. 8C, using the resist 232 as an etching mask, the substrate 202 is removed by etching, for example, ICP-RIE. At this time, when viewed from above, an opening 200 in the shape of the letter “I” of the alphabet is formed.
[0066]
Next, as shown in FIG. 8D, the portions of the insulating layers 208a and 208b exposed at the openings 200, the insulating layer 218, and the conductive film 216 are removed by etching. Specifically, the insulating layers 208a and 208b, which are silicon oxide films on the sidewalls of the opening 200, are formed on the sidewalls of the opening 200 while the resist 232 is left.₄Removal is performed by wet etching using a mixed solution of F. At the same time, the insulating layer 218 is also removed by wet etching. Then, the Cr film of the conductive film 216 is removed by wet etching using, for example, a mixed solution of ammonium cerium (IV) nitrate, perchloric acid, and water. Then, the Au film of the conductive film 216 is removed by wet etching using, for example, a mixed solution of potassium iodide, iodine, and water.
[0067]
Next, as shown in FIG. 8E, after removing the resist 232, the silicon nitride film 210b is removed by etching. Specifically, the silicon nitride film 210b is removed by wet etching using, for example, hot phosphoric acid, and the opening 200 is penetrated. In this example, the back surface of the substrate 202 is exposed, but a conductive film may be formed on the back surface of the substrate 202 in order to prevent the substrate 202 from being charged up. As described above, the blanking aperture array device 26 is completed by the manufacturing method shown in FIGS. 6, 7, and 8.
[0068]
According to the blanking aperture array device 26 according to the first and second embodiments, since the conductive layers 206a and 206b and the substrate 202 are in contact, the conductive layers 206a and 206b are grounded through the substrate 202. be able to. Therefore, it is not necessary to form a wiring for grounding the conductive layers 206a and 206b, so that the wiring density can be reduced.
[0069]
FIG. 9 shows a third embodiment of a specific configuration of the blanking aperture array device 26. FIG. 9 is a plan view of the blanking aperture array device 26 as seen from the back side. In the third embodiment, the same components as those in the blanking aperture array device 26 according to the first embodiment and the second embodiment are denoted by the same reference numerals, the description thereof is omitted or simplified, and different portions are specifically described. I will explain it.
[0070]
The blanking aperture array device 26 further includes insulating layers 208c and 208d provided between the conductive layers 206a and 206b and the substrate 202, respectively. The insulating layers 208a, 208b, 208c, and 208d may be formed of the same material and may have substantially the same thickness.
[0071]
The insulating layers 208c and 208d are oxide films formed by thermally oxidizing the substrate 202, for example, silicon oxide films formed by thermally oxidizing a silicon substrate, like the insulating layers 208a and 208b. In the direction from the deflection electrode 204a to the deflection electrode 204b, the widths of the insulating layers 208c and 208d are preferably shorter than the widths of the conductive layers 206a and 206b. In other words, the insulating layers 208c and 208d are at positions shielded by the conductive layers 206a and 206b with respect to the path through which the electron beam passes. Therefore, the insulating layers 208c and 208d can be prevented from being charged up.
[0072]
FIG. 11 and FIG. 12 show an example of a manufacturing method of the blanking aperture array device 26 according to the third embodiment. 10, FIG. 11 and FIG. 12 show a BB ′ cross section of the blanking aperture array device 26 shown in FIG.
[0073]
First, as shown in FIG. 10A, a substrate 202 is prepared, and silicon nitride films 210a and 210b are formed on the front and back surfaces of the substrate 202, respectively. At this time, both the silicon nitride films 210a and 210b may be formed at the same time, or one of them may be formed at a time. The substrate 202 is, for example, a silicon wafer having a diameter of 6 inches and a thickness of 200 μm. The silicon nitride films 210a and 210b are formed to a thickness of 1 μm, for example.
[0074]
Next, as shown in FIG. 10B, a resist 212 is applied on the silicon nitride film 210a, exposed, and developed to form a resist 212 in a region where the deflection electrodes 204a and 204b and the conductive layers 206a and 206b are to be formed. Remove. Then, using the resist 212 as an etching mask, the silicon nitride film 210a in the region where the deflection electrodes 204a and 204b and the conductive layers 206a and 206b are to be formed is removed by etching, for example, RIE.
[0075]
Next, as shown in FIG. 10C, the substrate 202 in the portion where the deflection electrodes 204a and 204b and the conductive layers 206a and 206b are formed is etched using both or one of the resist 212 and the silicon nitride film 210a as an etching mask. For example, a plurality of openings 214 and 222 are formed by removal by ICP-RIE. The silicon nitride film 210b serves as an etching stopper layer when the substrate 202 is etched.
[0076]
Next, as shown in FIG. 10D, after removing the resist 212, insulating layers 208a, 208b, 208c, and 208d are formed on the inner walls of the plurality of openings 214 and 222 formed in the substrate 202. For example, the insulating layers 208a, 208b, 208c, and 208d are formed by thermally oxidizing the inner walls of the plurality of openings 214 and 222. Specifically, silicon exposed surfaces other than the portions covered with the silicon nitride films 210a and 210b among the inner walls of the plurality of openings 214 and 222 formed in the substrate 202 which is a silicon substrate are selectively thermally oxidized. Thus, insulating layers 208a, 208b, 208c, and 208d that are silicon oxide films are formed.
[0077]
Next, as illustrated in FIG. 10E, the conductive film 216 is formed over the silicon nitride film 210 b, and the insulating layer 218 is formed over the conductive film 216. Specifically, a Cr film 50 nm, an Au film 200 nm, and a Cr film 50 nm are formed in this order by an EB vapor deposition method or the like to form a conductive film 216 that is a Cr / Au / Cr laminated film. By forming a Cr / Au / Cr laminated film as the conductive film 216, adhesion between the silicon nitride film 210b and the conductive film 216 can be improved. Further, when there is no problem in the adhesion between the silicon nitride film 210b and the conductive film 216, the conductive film 216 may be a single layer film of an Au film, for example. Then, an insulating layer 218 of a silicon oxide film is formed over the conductive film 216 by a plasma CVD method or the like. Note that the silicon nitride film 210b formed in FIG. 10A is provided to electrically insulate the substrate 202 and the conductive film 216 from each other.
[0078]
Next, as shown in FIG. 11A, portions of the silicon nitride film 210a and the silicon nitride film 210b that are exposed in the plurality of openings 214 and 222 are selectively removed by, for example, RIE. At this time, without removing the insulating layers 208a, 208b, 208c, and 208d formed on the sidewalls of the plurality of openings 214 and 222, the silicon nitride film 210b is formed until the conductive film 216 is exposed in the plurality of openings 214 and 222. Etch. Further, the Cr film is etched until the Au film of the conductive film 216 is exposed. In another example, the silicon nitride film 210a and the silicon nitride film are removed without removing the insulating layers 208a, 208b, 208c, and 208d formed on the sidewalls of the openings 214 and 222 by wet etching using hot phosphoric acid. After removing portions exposed to the plurality of openings 214 and 222 of the film 210b, the Cr film of the conductive film 216 may be similarly removed by etching.
[0079]
Next, as shown in FIG. 11B, the conductive film 216 is filled with a conductive material by selectively electrolytically plating the openings 214 and 222 using the Au film of the conductive film 216 as a plating electrode (seed layer). Thus, the deflection electrodes 204a and 204b and the conductive layers 206a and 206b are formed. For example, the deflection electrodes 204a and 204b and the conductive layers 206a and 206b are formed of Cu, Au, or the like. Then, after forming the deflection electrodes 204a and 204b and the conductive layers 206a and 206b, unnecessary conductive material is polished and removed by, for example, CMP. In another example, a Cr film is formed on the surfaces of the insulating layers 208 a, 208 b, 208 c, and 208 d exposed in the plurality of openings 214 and 222 by a sputtering method, and then inside the Cr film in the plurality of openings 214 and 222. The deflection electrodes 204a and 204b and the conductive layers 206a and 206b may be formed by filling with a conductive material. Thereby, the adhesion between the deflection electrodes 204a and 204b and the conductive layers 206a and 206b and the insulating layers 208a, 208b, 208c, and 208d can be improved.
[0080]
Next, as illustrated in FIG. 11C, an insulating layer 224 and a wiring layer 226 are formed on the substrate 202. Specifically, an insulating layer 224 that is a silicon oxide film is formed to a thickness of about 1 μm by plasma CVD or the like. Then, a resist is applied onto the insulating layer 224, exposed and developed, and the resist in the upper regions such as the deflection electrodes 204a and 204b and the conductive layers 206a and 206b is removed. Then, the insulating layer 224 is removed by etching, for example, RIE using the resist as an etching mask. Then, after removing the resist, a wiring layer 226 is formed by depositing a Cr film and an Au film in this order on the surface of the insulating layer 224 by a sputtering method.
[0081]
Next, as shown in FIG. 11D, a wiring pattern is formed in the wiring layer 226. Specifically, a resist is applied on the wiring layer 226, exposed and developed, and the resist in a region where no wiring is formed is removed. Then, using the resist as an etching mask, the wiring layer 226 is removed by etching, for example, RIE to form a wiring pattern. Then, the resist is removed.
[0082]
Next, as illustrated in FIG. 11E, the insulating layer 228 and the conductive film 230 are formed over the insulating layer 224 and the wiring layer 226. Specifically, an insulating layer 228 that is a silicon oxide film is formed to a thickness of about 1 μm by plasma CVD or the like. Then, a conductive film 230 is formed by depositing a Cr film and an Au film in this order on the surface of the insulating layer 228 by sputtering. The conductive film 230 functions as a charge-up preventing metal layer such as the insulating layer 228 by being grounded.
[0083]
Next, as shown in FIG. 12A, a resist 232 is applied on the conductive film 230, exposed and developed, and the resist 232 in the region where the opening 200 through which the electron beam should pass is removed. Then, using the resist 232 as an etching mask, the conductive film 230 is removed by etching, for example, ion milling, and the insulating layers 224 and 228 are removed by etching, for example, RIE.
[0084]
Next, as shown in FIG. 12B, the substrate 202 is removed by etching, for example, ICP-RIE, using the resist 232 as an etching mask. At this time, when viewed from above, an opening 200 in the shape of the letter “I” of the alphabet is formed.
[0085]
Next, as shown in FIG. 12C, the portions of the insulating layers 208a, 208b, 208c, and 208d exposed to the opening 200, the insulating layer 218, and the conductive film 216 are removed by etching. Specifically, the insulating layers 208 a, 208 b, 208 c, and 208 d that are silicon oxide films on the sidewalls of the opening 200 are formed, for example, with HF and NH while the resist 232 is left.₄Removal is performed by wet etching using a mixed solution of F. At the same time, the insulating layer 218 is also removed by wet etching. Then, the Cr film of the conductive film 216 is removed by wet etching using, for example, a mixed solution of ammonium cerium (IV) nitrate, perchloric acid, and water. Then, the Au film of the conductive film 216 is removed by wet etching using, for example, a mixed solution of potassium iodide, iodine, and water.
[0086]
Next, as shown in FIG. 12D, after removing the resist 232, the silicon nitride film 210b is removed by etching. Specifically, the silicon nitride film 210b is removed by wet etching using, for example, hot phosphoric acid, and the opening 200 is penetrated. In this example, the back surface of the substrate 202 is exposed, but a conductive film may be formed on the back surface of the substrate 202 in order to prevent the substrate 202 from being charged up. As described above, the blanking aperture array device 26 is completed by the manufacturing method shown in FIGS. 10, 11, and 12.
[0087]
According to the blanking aperture array device 26 according to the third embodiment, since the deflection electrodes 204a and 204b and the conductive layers 206a and 206b have the same configuration, the deflection electrodes 204a and 204b and the conductive layers 206a and 206b are formed simultaneously. can do. Therefore, the manufacturing process of the blanking aperture array device 26 can be reduced.
[0088]
As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. Various modifications or improvements can be added to the above embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.
[0089]
【The invention's effect】
As is apparent from the above description, according to the present invention, a deflector that deflects a charged particle beam with high accuracy, a method of manufacturing the deflector, and a charged particle beam exposure apparatus including the deflector can be provided.
[Brief description of the drawings]
FIG. 1 is a diagram showing an example of the configuration of an electron beam exposure apparatus.
FIG. 2 is a diagram showing an example of a configuration of a blanking aperture array device 26. FIG.
3 is a diagram illustrating an example of the configuration of an aperture unit 160. FIG.
FIG. 4 is a diagram showing a first embodiment of a specific configuration of a blanking aperture array device 26;
FIG. 5 is a diagram showing a second embodiment of a specific configuration of the blanking aperture array device 26;
FIG. 6 is a diagram illustrating an example of a manufacturing method of the blanking aperture array device 26 according to the first embodiment or the second embodiment.
FIG. 7 is a diagram showing an example of a manufacturing method of the blanking aperture array device 26 according to the first embodiment or the second embodiment.
FIG. 8 is a diagram showing an example of a manufacturing method of the blanking aperture array device 26 according to the first embodiment or the second embodiment.
FIG. 9 is a diagram showing a third embodiment of a specific configuration of the blanking aperture array device 26;
FIG. 10 is a diagram illustrating an example of a manufacturing method of a blanking aperture array device 26 according to a third embodiment.
FIG. 11 is a diagram illustrating an example of a manufacturing method of a blanking aperture array device 26 according to a third embodiment.
FIG. 12 is a diagram showing an example of a manufacturing method of the blanking aperture array device 26 according to the third embodiment.
[Explanation of symbols]
8 .. Housing 10.. Electron beam generator 12.. Cathode 14.. First molded member 16. First multi-axis electron lens 18. First molded deflection unit 20. 2 shaping deflection part, 22 ... second molding member, 24 ... second multi-axis electron lens, 26 ... blanking aperture array device, 28 ... electron beam shielding member, 34 ... third multi-axis electron lens, 36 .. Fourth multi-axis electron lens 38.. Sub deflection unit 40.. First coil 42. Main deflection unit 44 Wafer 46 Wafer stage 48 Wafer stage drive unit 50 ... Second coil 52 ... Coaxial lens 80 ... Electron beam control unit 82 ... Multi-axis electron lens control unit 84 ... Shaping deflection control unit 86 ... Blanking aperture array control unit 90 ..Coaxial lens control unit, 92 , 94 ..Main deflection control unit, 96 ..Wafer stage control unit, 100 ..Electron beam exposure apparatus, 102 ..Grid, 104 ..Electron gun, 106 ..Base material, 110 ..Electron beam forming means , 112.. Irradiation switching means, 114... Projection system for wafer, 120.. Individual control unit, 130.. General control unit, 140... Control unit, 150 ... Exposure unit, 160 Aperture unit, 162 .. Deflection electrode pad, 164 .. Ground electrode pad, 200 .. Opening, 202 .. Substrate, 204 .. Deflection electrode, 206 .. Conductive layer, 208 .. Insulating layer, 210 .. Silicon nitride film, 212 Resist, 214... Opening, 216... Conductive film, 218 .. Insulating layer, 220 .. Resist, 222.. Opening, 224 .. Insulating layer, 226 .. Wiring layer, 228. Guidance Film, 232 ... resist

Claims (35)

A deflector for deflecting a charged particle beam,
An opening through which the charged particle beam is to pass, and a conductive film formed on the back surface ;
A first deflection electrode and a second deflection electrode provided opposite to each other in the opening to deflect the charged particle beam;
A first conductive layer and a second conductive layer, which are provided opposite to each other in the opening in a direction substantially perpendicular to the direction from the first deflection electrode to the second deflection electrode and are made of a material having higher conductivity than the substrate. With conductive layer
A first insulating layer and a second insulating layer respectively provided between the first deflection electrode and the second deflection electrode and the substrate ;
In the direction from the first deflection electrode to the second deflection electrode and the direction substantially perpendicular to the electron beam irradiation direction, the lengths of the first insulating layer and the second insulating layer are the first deflection electrode and the second deflection layer, respectively. A deflector shorter than the length of the second deflection electrode . The deflector according to claim 1, wherein the first conductive layer and the second conductive layer are formed of a material having higher conductivity than the substrate. The deflector according to claim 1 , wherein the first conductive layer and the second conductive layer are grounded. 4. The deflector according to claim 1, wherein the first conductive layer and the second conductive layer are formed by metal plating. 5. The deflector according to any one of claims 1 to 4 , wherein the first conductive layer and the second conductive layer are thinner than the first deflection electrode and the second deflection electrode. The deflector according to any one of claims 1 to 5 , wherein a distance between the first deflection electrode and the second deflection electrode is smaller than a distance between the first conductive layer and the second conductive layer. The substrate is a silicon substrate;
The deflector according to any one of claims 1 to 6 , wherein the first insulating layer and the second insulating layer are silicon oxide films formed by thermally oxidizing the silicon substrate. 8. The deflector according to claim 7, wherein the first insulating layer and the second insulating layer are in a position shielded by the first deflection electrode and the second deflection electrode with respect to a path through which the electron beam passes. The width of the first insulating layer and the second insulating layer is shorter than the width of the first conductive layer and the second conductive layer in the direction from the first deflection electrode to the second deflection electrode. The deflector according to claim 8. The deflector according to claim 7, wherein the first conductive layer and the second conductive layer are provided from a position adjacent to the first insulating layer to a position adjacent to the second insulating layer. . The deflector according to claim 10 , wherein the first conductive layer and the second conductive layer are provided from an upper end to a lower end of the opening so as not to expose the substrate in the opening. The deflection according to any one of claims 7 to 11 , wherein the first deflection electrode and the second deflection electrode have a larger area of a surface facing the other deflection electrode than an area of a surface facing the substrate. vessel. The deflector according to claim 12 , wherein the first deflection electrode and the second deflection electrode have a trapezoidal column shape gradually narrowing from the center of the opening along the direction of the inner wall of the opening. In a direction substantially perpendicular to the direction from the first deflection electrode to the second deflection electrode, the widths of the surfaces of the first deflection electrode and the second deflection electrode facing the substrate are the first insulating layer and the second deflection electrode. The deflector according to any one of claims 7 to 13, wherein the deflector is not less than the width of the second deflection electrode. A third insulating layer and a fourth insulating layer respectively provided between the first conductive layer and the second conductive layer and the substrate;
15. The deflector according to claim 7, wherein the third insulating layer and the fourth insulating layer are silicon oxide films formed by thermally oxidizing the silicon substrate. The deflector according to claim 7, wherein the conductive film is formed of a Cr / Au / Cr laminated film. A substrate provided with an opening through which a charged particle beam passes, a first deflection electrode and a second deflection electrode provided facing the opening to deflect the charged particle beam, the first deflection electrode, and A first insulating layer and a second insulating layer provided between the second deflection electrode and the substrate, respectively, and the opening in a direction substantially perpendicular to the direction from the first deflection electrode to the second deflection electrode; A manufacturing method of a deflector comprising a first conductive layer and a second conductive layer provided to face each other,
The first insulation having a length shorter than the length of the first deflection electrode and the second deflection electrode in a direction from the first deflection electrode to the second deflection electrode and in a direction substantially perpendicular to the electron beam irradiation direction. Forming an insulating layer to form a layer and the second insulating layer;
Forming an electrode for forming the first deflection electrode and the second deflection electrode;
After forming the first deflection electrode and the second deflection electrode in the electrode formation step, an opening formation step of forming a plurality of openings for forming the first conductive layer and the second conductive layer in the substrate, respectively. When,
A conductive layer forming step of forming the first conductive layer and the second conductive layer in the plurality of openings formed in the opening forming step, respectively;
Forming a conductive film on the back surface of the substrate . 18. The method of manufacturing a deflector according to claim 17, wherein in the conductive layer forming step, the first conductive layer and the second conductive layer are formed of a material having higher conductivity than the substrate. The insulating layer forming step forms the first insulating layer and the second insulating layer at positions shielded by the first deflection electrode and the second deflection electrode with respect to a path through which the electron beam passes. Item 19. A method for manufacturing a deflector according to Item 17 or Item 18. In the insulating layer forming step, the widths of the first insulating layer and the second insulating layer are set such that the widths of the first conductive layer and the second conductive layer in the direction from the first deflecting electrode to the second deflecting electrode. 20. The method of manufacturing a deflector according to claim 17, wherein the deflector is formed shorter than the width. In the electrode forming step, a width of a surface of the first deflection electrode and the second deflection electrode facing the substrate in a direction substantially perpendicular to a direction from the first deflection electrode to the second deflection electrode is set to 21. The structure according to claim 17, wherein the first insulating layer and the second deflection electrode are formed to have a width greater than that of the first insulating layer. A method of manufacturing a deflector according to any one of the above. The method of manufacturing a deflector according to any one of claims 17 to 21, wherein in the step of forming the conductive film, the conductive film is formed of a Cr / Au / Cr laminated film. A substrate provided with an opening through which a charged particle beam passes, a first deflection electrode and a second deflection electrode provided facing the opening to deflect the charged particle beam, the first deflection electrode, and A first insulating layer and a second insulating layer provided between the second deflection electrode and the substrate, respectively, and the opening in a direction substantially perpendicular to the direction from the first deflection electrode to the second deflection electrode; A first conductive layer and a second conductive layer provided to face each other, and a third insulating layer and a fourth insulating layer provided between the first conductive layer, the second conductive layer and the substrate, respectively. A method of manufacturing a deflector comprising:
Forming an opening in the substrate for forming a plurality of openings for forming the first deflection electrode, the second deflection electrode, the first conductive layer, and the second conductive layer;
The inner wall of the plurality of openings formed in the opening forming step has a length in the direction from the first deflection electrode to the second deflection electrode and in a direction substantially perpendicular to the electron beam irradiation direction. Forming an insulating layer forming the first insulating layer and the second insulating layer shorter than the length of the deflection electrode and the second deflection electrode, and forming the third insulating layer and the fourth insulating layer;
In each of the plurality of openings, inside the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer, the first deflection electrode, the second deflection electrode, An electrode forming step of forming the first conductive layer and the second conductive layer, respectively;
Forming a conductive film on the back surface of the substrate . The insulating layer forming step includes forming the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer by thermally oxidizing inner walls of the plurality of openings, respectively. The manufacturing method of the deflector of Claim 23 containing. 25. The method of manufacturing a deflector according to claim 23, wherein in the electrode formation step, the first conductive layer and the second conductive layer are formed of a material having higher conductivity than the substrate. The insulating layer forming step forms the first insulating layer and the second insulating layer at positions shielded by the first deflection electrode and the second deflection electrode with respect to a path through which the electron beam passes. 26. A method of manufacturing a deflector according to any one of items 23 to 25. In the insulating layer forming step, the widths of the first insulating layer and the second insulating layer are set such that the widths of the first conductive layer and the second conductive layer in the direction from the first deflecting electrode to the second deflecting electrode. 27. A method of manufacturing a deflector according to claim 23, wherein the deflector is formed shorter than the width. In the electrode forming step, a width of a surface of the first deflection electrode and the second deflection electrode facing the substrate in a direction substantially perpendicular to the direction from the first deflection electrode to the second deflection electrode is set to The method of manufacturing a deflector according to any one of claims 23 to 27, wherein the deflector is formed to be equal to or larger than a width of the first insulating layer and the second deflection electrode. 29. The method of manufacturing a deflector according to claim 23, wherein the step of forming the conductive film includes forming the conductive film with a Cr / Au / Cr laminated film. A charged particle beam exposure apparatus for exposing a wafer with a charged particle beam,
A charged particle beam generator for generating the charged particle beam;
A deflector for deflecting the charged particle beam to irradiate a desired position on the wafer,
The deflector is
An opening through which the charged particle beam is to pass, and a conductive film formed on the back surface ;
A first deflection electrode and a second deflection electrode provided opposite to each other in the opening to deflect the charged particle beam;
A first conductive layer and a second conductive layer, which are provided opposite to each other in the opening in a direction substantially perpendicular to the direction from the first deflection electrode to the second deflection electrode and are made of a material having higher conductivity than the substrate. With conductive layer
A first insulating layer and a second insulating layer respectively provided between the first deflection electrode and the second deflection electrode and the substrate ;
In the direction from the first deflection electrode to the second deflection electrode and the direction substantially perpendicular to the electron beam irradiation direction, the lengths of the first insulating layer and the second insulating layer are the first deflection electrode and the second deflection layer, respectively. A charged particle beam exposure apparatus shorter than the length of the second deflection electrode . The charged particle beam exposure apparatus according to claim 30, wherein the first conductive layer and the second conductive layer are formed of a material having higher conductivity than the substrate. The said 1st insulating layer and the said 2nd insulating layer are in the position shielded by the said 1st deflection electrode and the said 2nd deflection electrode with respect to the path | route through which the said electron beam passes. Charged particle beam exposure equipment. The widths of the first insulating layer and the second insulating layer are shorter than the widths of the first conductive layer and the second conductive layer in the direction from the first deflection electrode to the second deflection electrode. The charged particle beam exposure apparatus according to claim 32. In a direction substantially perpendicular to the direction from the first deflection electrode to the second deflection electrode, the widths of the surfaces of the first deflection electrode and the second deflection electrode facing the substrate are the first insulating layer and the second deflection electrode. The charged particle beam exposure apparatus according to any one of claims 30 to 33, wherein the charged particle beam exposure apparatus has a width equal to or greater than a width of the second deflection electrode. The charged particle beam exposure apparatus according to any one of claims 30 to 34, wherein the conductive film is formed of a Cr / Au / Cr laminated film.

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