JP4455846B2 - Electrode substrate and manufacturing method thereof, deflector using the electrode substrate, and charged particle beam exposure apparatus using the deflector - Google Patents

Description

  The present invention relates to a charged particle beam exposure apparatus such as an electron beam exposure apparatus and an ion beam exposure apparatus mainly used for exposure of micro devices such as semiconductor integrated circuits, and in particular, performs pattern drawing using a plurality of charged particle beams. The present invention relates to an electrode substrate used as a deflector constituting a blanker or an electron lens in a charged particle beam exposure apparatus and a method for manufacturing the same.

  Non-Patent Document 1 discloses an example of a charged particle beam exposure apparatus that performs pattern drawing using a plurality of charged particle beams. FIG. 9 is a cross-sectional view of a blanking aperture array used in the charged particle beam exposure apparatus disclosed in Non-Patent Document 1. The blanking aperture array has openings (through holes) and deflectors arranged in an array, and irradiation of a plurality of electron beams can be individually controlled. Here, in the figure, 51 indicates an opening, and 52 and 53 indicate first and second blanking electrodes, respectively. When a charged particle beam that has passed through the opening 51 is irradiated onto a sample such as a wafer, a ground potential signal is applied to the first and second blanking electrodes 52 and 53, and when the sample is cut off, the first and second Signals of positive and negative potentials are simultaneously applied to the blanking electrodes.

Non-Patent Document 1 describes a blanking aperture array fabrication method in which a plurality of openings are two-dimensionally formed in a semiconductor crystal substrate such as silicon, and a deflection electrode pair is formed around each opening. How to do is introduced. Specifically, concave portions corresponding to the blanking aperture array were formed on the surface of the Si substrate, and after forming the deflection electrode adjacent to each concave portion by plating, the substrate surface was used as a plating base. The conductor layer is removed, and then the back surface of the Si substrate is wet etched to form a membrane. The wet etching is performed in a state where the Si substrate is protected except for a part of the back surface thereof.

However, the conventional blanking aperture array has the following problems.
(1) The manufacturing method is very complicated. Therefore, when an attempt is made to increase the number of arrays, it is difficult to produce a large number of blanking aperture arrays with high accuracy and yield.
(2) An insulator such as a silicon oxide film is exposed in the vicinity of the deflection electrode. Therefore, when a charged particle beam is irradiated, charge-up is caused and there is a possibility of affecting the charged particle beam passing through the opening. For this reason, appropriate deflection and position control of the charged particle beam are not performed, and it may be difficult to expose the wafer with high accuracy.
“Hiroshi Yasuda: Applied Physics 69, 1135 (1994)”

  An object of the present invention is to solve the above-described problems in the conventional example, and to provide a method for easily manufacturing an electrode substrate used as a blanking aperture array or the like. Another object is to provide an electrode substrate that is less likely to be charged up when used as a blanking aperture array or the like.

In order to solve the above problems, an electrode substrate of the present invention is an electrode substrate having a substrate having a through-hole and one or more electrodes arranged on a side wall of the through-hole, Ri shape der the shape of parallel cross section is provided with a convex portion on a part of the convex polygon and the surface, as the plurality of electrodes, a first electrode pair provided to face each other, said first electrode the pair characterized Rukoto and a second electrode pair provided separately.

The convex portion is a groove when viewed from the side of the side wall surface where the electrode is formed. Such a groove is difficult to form a continuous film from the planar portion of the side wall of the through-hole to the inside of the groove by a film forming method such as sputtering or vapor deposition. Can be insulated. In particular, it is effective when the aspect ratio of the convex portion (ratio between the groove opening width and the depth) is larger than 1.
Further, the convex portions can be easily masked when forming a plurality of electrodes by a film forming method such as sputtering or vapor deposition, and a plurality of electrodes insulated from each other can be formed on the side wall of the through-hole with a high yield. .
Further, the through-hole is formed having a pair of first side wall surfaces parallel to each other and a pair of second side wall surfaces perpendicular to the first side wall surface, and the first side as the electrode By arranging the first electrode pair for deflecting charged particles on the wall surface to face each other and the second electrode pair for shielding to face each other on the second side wall surface, charging up can occur. A difficult electrode substrate can be provided. In this case, the convex polygon is a square or a rectangle, or a shape obtained by cutting these one to four corners with one or a plurality of straight lines.

In the following, as an embodiment of the present invention, a deflector is taken as an example and the expression is changed and listed.
[Embodiment 1] (shape of through-hole)
A deflector for deflecting a charged particle beam,
The deflector is
A substrate,
A through hole formed in the substrate;
A first electrode installed on a side wall of the through hole;
A second electrode disposed on the side wall of the through hole so as to face the first electrode;
Voltage application means for applying a voltage independently to the first electrode and the second electrode;
The deflector characterized in that the shape of the cross section of the through hole parallel to the surface of the substrate is a polygon, and the interior angle of the polygon is at least four locations exceeding 180 °.
Thus, when the cross-sectional shape of the through hole is a concave polygon having four or more locations where the inner angle exceeds 180 °, the polygon forms two or more convex portions. It is difficult to form a continuous film on the side wall of the through-hole by a film formation method such as sputtering or vapor deposition on the inside of the convex portion, and as a result, the first electrode and the second electrode are electrically insulated. Can do. This is particularly effective when the aspect ratio of the convex portion is larger than 1. It is more effective when the aspect ratio is larger than 2.

[Embodiment 2] (Divided into two electrodes)
The deflector according to the first embodiment, wherein there are eight or more locations where the inner angle of the polygon exceeds 180 °.
Thus, if eight or more locations where the internal angle of the polygon exceeds 180 ° are provided, the polygon forms four or more convex portions. For the same reason as in the first embodiment, four independent electrodes can be formed in the through hole.

[Embodiment 3] (Sidewall Shield Electrode)
Embodiment 3 wherein the third electrode is provided on a side surface of the through-hole and substantially perpendicular to the first electrode, and the third electrode is electrically grounded 3. A deflector according to 2.
Thus, by providing the third electrode on the surface perpendicular to the first electrode and electrically grounding it, it is possible to prevent the side wall of the through hole from being charged up. Further, when the deflectors are arranged in an array, crosstalk between adjacent deflectors can be reduced.

[Embodiment 4] (Insulation)
Embodiment 1 wherein the substrate includes an insulating layer on at least one of a contact surface between the substrate and the first electrode and a contact surface between the substrate and the second electrode. The deflector according to any one of?
As described above, since the contact surface between the electrode and the substrate includes the insulating layer, a potential can be stably applied to the electrode. Therefore, it is possible to cope with an attempt to improve the control speed of the charged particle beam.

[Embodiment 5] (Thermal oxide film)
The deflector according to any one of Embodiments 1 to 4, wherein the insulating layer is silicon dioxide.
Thus, by using silicon dioxide for the insulating layer, the insulating layer can be easily provided by various film forming means such as CVD and sputtering. In particular, when silicon is used for the substrate, a thermal oxide film can be formed by a thermal oxidation method, and an insulating layer with good coverage can be formed.

[Embodiment 6] (Silicon substrate)
The deflector according to any one of Embodiments 1 to 5, wherein the substrate is made of silicon.
Thus, by using silicon for the substrate, reactive ion etching or wet etching with strong alkali can be performed, and a through hole can be formed with high accuracy.

[Embodiment 7] (Precious metal electrode)
The deflector according to any one of Embodiments 1 to 6, wherein at least one exposed surface of the first electrode and the second electrode contains a noble metal.
Thus, there is no fear of the oxidation of an electrode by using a noble metal for the exposed surface of an electrode. Therefore, there is no fear of insulation due to oxidation of the electrode, and there is no possibility of charge-up of the electrode itself.

[Embodiment 8] (Array)
A deflector array, wherein the deflectors according to any one of Embodiments 1 to 7 are arranged in a line (one-dimensional) or a matrix (two-dimensional).
In this way, by arranging the deflectors in a line or matrix form, it can be used in an exposure apparatus using a plurality of charged particle beams.

[Embodiment 9] (Manufacturing method)
In the manufacturing method of the deflector or the deflector array according to any one of Embodiments 1 to 8,
Forming the through hole in the substrate using photolithography;
Forming an insulating layer on the side wall of the through hole;
Forming at least one of a first electrode, a second electrode, and a third electrode on the side wall of the through-hole.
Thus, by forming an opening (through hole) in the substrate using photolithography and forming an electrode inside the opening, the deflector or the deflector array described in the first to eighth embodiments can be manufactured by a simple manufacturing process. Can be offered.

[Embodiment 10] (RIE)
The method for manufacturing a deflector according to the ninth embodiment, wherein the step of forming the through hole includes reactive ion etching.
Thus, by forming the opening using reactive ion etching (RIE), the electrode and the opening can be formed with high accuracy. Further, the present invention can be applied to a case where a large number of deflectors are arranged.

[Embodiment 11] (Thermal oxide film)
11. The method of manufacturing a deflector according to embodiment 9 or 10, wherein the substrate is silicon, and the step of forming an insulating layer on the side wall of the through hole includes thermal oxidation.
Thus, silicon dioxide can be formed on the sidewall of the opening by thermal oxidation, and an insulating layer with good coverage can be formed.

[Embodiment 12] (Sputtering or vapor deposition)
Embodiments 9 to 11 wherein the step of forming at least one of the first electrode, the second electrode, and the third electrode on the side wall of the through hole includes any one of sputtering and vapor deposition. A method for manufacturing a deflector according to any one of the above.
In this manner, by forming the electrode by sputtering or vapor deposition, it is difficult to form a continuous film at the convex portion described above, and therefore the deflection electrode and the shield electrode can be formed electrically independently.

[Embodiment 13] (Exposure apparatus)
A charged particle beam exposure apparatus for exposing a wafer using a charged particle beam,
The charged particle beam exposure apparatus comprises:
A charged particle source emitting a charged particle beam;
A first electron optical system for forming a plurality of intermediate images of the charged particle source;
A second electron optical system that projects a plurality of intermediate images formed by the first electron optical system onto a wafer;
A positioning device for positioning the wafer;
The first electron optical system includes the deflector according to any one of Embodiments 1 to 8. A charged particle beam exposure apparatus, wherein:
As described above, by applying the deflector according to any one of the first to eighth embodiments to a charged particle beam exposure apparatus, there is less risk of charge-up of the deflector, so that charged particle beam exposure capable of stable operation is possible. An apparatus can be provided. In addition, since the deflector has a simple configuration, it can be provided at a low yield with a high yield.

Embodiments of the present invention will be described below with reference to the drawings.
[First embodiment] (Description of deflector of charged particle beam)
5A and 5B are schematic views of the charged particle beam deflector 500 according to the first embodiment of the present invention. FIG. 5A is a top view, FIG. 5B is a cross-sectional view taken along line AA ′ in FIG. ) Shows a cross-sectional view along BB ′ in FIG.

  First, the structure of the deflector 500 will be described. The deflector 500 is a deflector that deflects one charged particle beam, and includes a through hole 513 through which a charged particle beam passes in a substrate 501. The through-hole 513 is characterized by having four rectangular convex portions 515 at four corners of a rectangle (convex polygon). The shape of the through-hole 513 as a whole is a hexagon (concave hexagon) having eight locations where the inner angle exceeds 180 °, and the angle 514 is 225 °. The convex portion 515 is a groove or slit having an aspect ratio of 2 when viewed from the side wall of the through hole 513. The convex portion 515 is provided for the purpose of electrically forming a pair of deflection electrodes 503 and a pair of shield electrodes 506 in terms of the manufacturing method, and the manufacturing method will be described later.

  A pair of deflection electrodes 503a and 503b are provided on the side wall of the through hole 513 so as to face each other. In addition, a pair of shield electrodes 505a and 505b are provided opposite to each other on the side wall of the through hole 513 and perpendicular to the deflection electrodes 503a and 503b. The shield electrodes 505a and 505b are electrically grounded by wirings 506a and 506b formed on the surface of the substrate 501 as films continuous with the shield electrodes 505a and 505b. The side wall of the convex portion 515 has portions where the insulating layer 504 is exposed on both sides of the deflection electrodes 503a and 503b and the shield electrodes 505a and 505b and in the convex portion 515. Since it is away from the center, there is little risk of charge-up due to the passage of charged particle beams.

  Further, wirings 502a and 502b for applying a potential to the deflection electrodes 503a and 503b are provided on the surface of the substrate 501, and the wirings 502a and 502b and the deflection electrodes 503a and 503b are formed as continuous films. Here, the wirings 502a and 502b are formed with the same width as the deflection electrodes 503a and 503b, and the wirings 506a and 506b are formed with the same width as the shield electrodes 505a and 505b, respectively. The other ends of the wirings 502a and 502b function as pads 510a and 510b, and are brought into electrical contact with probe pins or wire bonding. Furthermore, an arbitrary potential can be applied to the deflection electrodes 503a and 503b by the power source 511.

  The substrate 501 is provided with an insulating layer 504, and can stably apply a potential to the deflection electrodes 503a and 503b. The substrate 501 is, for example, a silicon substrate having a thickness of 200 μm, and the thickness is mainly determined by the necessary deflection sensitivity. Further, a noble metal such as gold or platinum is used for the deflection electrodes 503a and 503b. The wirings 502a and 502b are made of a noble metal such as gold or platinum, or a low resistance metal such as copper or aluminum. For the insulating layer 504, a silicon nitride film, a silicon oxide film, or the like is used. The dimensions of the main part are shown in each figure. That is, the basic shape of the through hole 513 is a rectangle of 40 μm × 60 μm, and the through hole 513 is a concave hexagonal shape in which rectangular convex portions 515 having a width of 10 μm and a depth of about 20 μm are added to four corners of the basic rectangle. Is formed.

Next, functions of the shield electrodes 505a and 505b will be described. When the charged particle beam is irradiated so as to pass through the through-hole 513, the shield electrodes 505a and 505b prevent the insulating layer 504 from being charged up. Since the shield electrodes 505a and 505b are electrically grounded, they are always kept at the ground potential.
The deflector 500 of this embodiment has one through-hole 513 and a pair of deflecting electrodes 503a and 503b, but the deflector 500 is arranged in a line (one-dimensional) or matrix (two-dimensional) on the same substrate. It is good also as a deflector array. When the deflector 500 is configured as a deflector array in which a plurality of deflectors 500 are arranged in a matrix, for example, an effect of reducing crosstalk between adjacent deflectors 500 can be expected as an effect of the shield electrodes 505a and 505b.

6A and 6B are top views showing other structures of the deflector 500. FIG. In the figure, the same components as those in FIG.
In the example shown in FIG. 6A, triangle-shaped convex portions having a base whose length is longer than the joint portion with the rectangle are arranged at the four corners of the rectangle, and the overall shape is a decagon. There are eight places where the inner angle exceeds 180 °. In FIG. 6A, an angle 514 is 315 °, which is characterized in that the angle is larger than that in the example of FIG. In view of the manufacturing method, it is intended that the film is not continuously formed at the corner 514.
The example shown in FIG. 6B has a structure without the shield electrodes 505a and 505b and the wirings 506a and 506b shown in the above example, and the deflector 500 itself has a simple structure.

  Next, the operation of the deflector 500 will be described. Consider a case where a charged particle beam is irradiated so as to pass through the through-hole 513. When each of the deflection electrodes 503a and 503b is electrically grounded, the charged particle beam passes through the through hole 513 without changing its orbit. However, when different potentials are applied to the deflection electrodes 503a and 503b, an electric field is generated in the through-hole 513, and the charged particle beam can be deflected in a desired direction. In addition, since exposure of the insulating layer 504 is kept to a minimum, there is little risk of charge-up and stable operation can be expected.

Next, a method for manufacturing the deflector 500 shown in FIG. 6A will be described with reference to FIGS. 7A to 7C and FIGS. 8D to 8F. The deflector 500 is produced, for example, by performing the steps shown in the following (1) to (6). In the drawing, the left side is a cross-sectional view along AA ′ in FIG. 6A, and the right side is a top view.
(1) A substrate 501 is prepared. The substrate 501 is made of silicon and has a thickness of, for example, 200 μm, which is an important factor for determining the deflection sensitivity. Next, a silicon dioxide 507 having a film thickness of 1.5 μm is formed on the front and back surfaces of the substrate 501 by using a thermal oxidation method (FIG. 7A).
(2) Using a novolac resist on the surface of the substrate 501, photolithography is performed to form an etching mask (not shown). Next, reactive ion etching using a gas such as CF ₄ or CHF ₃ is performed to etch the silicon dioxide 507. Thereafter, the resist is removed (FIG. 7B).

(3) Reactive ion etching using inductively coupled plasma and a BOSCH process is performed on the substrate 501 that is silicon to expose the back (lower) side silicon dioxide 507 on the front side of the substrate (FIG. 7C).
(4) The silicon dioxide 507 is removed using buffered hydrofluoric acid (not shown). Thereafter, an insulating layer 504 made of silicon dioxide having a thickness of 1.5 μm is formed on the front and back surfaces of the substrate 501 and the sidewalls of the opening by using a thermal oxidation method. At the same time, a through hole 513 having a convex portion 515 and a corner 514 is formed (FIG. 8D).
(5) Mask the insulating layer 504 using the metal mask 516 (FIG. 8E).

(6) Wiring 502 (502a, 502b) layer, deflection electrode 503 (503a, 503b) layer, shield electrode 505 (505a, 505b) (see FIG. 5C) layer and wiring 506 (506a, 506b) layer By successively depositing titanium / gold at a set thickness (surface) of 5 nm / 500 nm by sputtering, the deflection electrode 503, the wiring 502, the shield electrode 505, and the wiring 506 are formed simultaneously. The shield electrode 505 (not shown in FIGS. 7 and 8) is continuous with the wiring 506 on a side wall (not shown) located in front of and behind the through hole 513 in the left view (cross-sectional view) of FIGS. It is formed. The film thickness of titanium should just work for adhesion promotion, and is used in the range of several nm to several hundred nm. Further, the side wall of the through-hole 513 tends to be thinner than the surface due to sputtering characteristics. For this reason, a sufficiently thick film thickness of 500 nm is set on the surface, and a film thickness of 100 nm or more is expected on the side surface. Further, since the convex portion 515 is masked by the metal mask 516, a continuous film is not formed on the side wall of the convex portion 515. Therefore, the deflection electrode 503 and the shield electrode 505 can be electrically insulated. In addition, since it is difficult to form a continuous film by sputtering at the corner 514, electrical insulation between the deflection electrode 503 and the shield electrode 505 can be effectively performed. In addition, the wirings 502a and 502b and the deflection electrodes 503a and 503b are formed as continuous films and are electrically connected.

[Second Embodiment] (Description of Components of Electron Beam Exposure Apparatus)
The second embodiment of the present invention shows an example of an electron beam exposure apparatus using the charged particle beam deflector described in the first embodiment as a blanker. Note that the present invention is not limited to an electron beam and can be similarly applied to an exposure apparatus using an ion beam.
FIG. 1 is a schematic view of the essential portions of an electron beam exposure apparatus according to a second embodiment of the present invention. In FIG. 1, reference numeral 1 denotes a multi-source module that forms a plurality of electron source images and emits an electron beam from the electron source images. The multi-source modules 1 are arranged in a 3 × 3 configuration. It will be described later.
21, 22, 23, and 24 are magnetic lens arrays, and magnetic disks MD having apertures of the same shape arranged in 3 × 3 are arranged above and below at intervals and excited by a common coil CC. It is what. As a result, each aperture becomes a magnetic pole of each magnetic lens ML, and a lens magnetic field is generated by design.

A plurality of electron source images of each multi-source module 1 are projected onto the wafer 4 by the corresponding four magnetic field lenses (ML1, ML2, ML3, ML4) of the magnetic lens arrays 21, 22, 23, 24. An optical system that acts on an electron beam before the wafer is irradiated with an electron beam from one multi-source module is defined as a column. That is, a present Example is a structure of 9 columns (col.1-col.9).
At this time, an image is formed once by two magnetic lenses corresponding to the magnetic lens array 21 and the magnetic lens array 22, and then the image is formed by two corresponding magnetic lenses of the magnetic lens array 23 and the magnetic lens array 24. Projecting onto the wafer 4. Then, by individually controlling the excitation conditions of the magnetic lens arrays 21, 22, 23, and 24 with a common coil, the optical characteristics (focal position, image rotation, magnification) of each column are substantially uniform. In other words, the same amount can be adjusted.

A main deflector 3 deflects a plurality of electron beams from the multi-source module 1 to displace a plurality of electron source images in the X and Y directions on the wafer 4.
Reference numeral 5 denotes a stage on which the wafer 4 is mounted and is movable in the XY direction orthogonal to the optical axis AX (Z axis) and the rotation direction around the Z axis, and a stage reference plate 6 is fixedly provided.
Reference numeral 7 denotes a reflected electron detector that detects reflected electrons generated when a mark on the stage reference plate 6 is irradiated by an electron beam.

Next, FIG. 2 is a diagram for explaining the functions of the multi-source module of the apparatus of FIG. The function of adjusting the optical characteristics of the electron beam irradiated onto the wafer 4 from the multi-source module 1 and the multi-module 1 will be described using FIG.
In FIG. 2, 101 is an electron source (crossover image) formed by an electron gun. The electron beam emitted from the electron source 101 becomes a substantially parallel electron beam by the condenser lens 102. The condenser lens 102 of this embodiment is an electrostatic lens composed of three aperture electrodes.

  103 is an aperture array formed by two-dimensionally arranging apertures, 104 is a lens array formed by two-dimensionally arraying electrostatic lenses having the same optical power, and 105 and 106 are electrostatic drives that can be individually driven. A deflector array formed by two-dimensionally arranging a type of 8-pole deflector, and 107 is a blanker array formed by two-dimensionally arraying electrostatic blankers that can be individually driven. The deflector described in the first embodiment is used as this blanker. In this embodiment, a blanker array 107 is formed.

  FIG. 3 shows the configuration of the optical system for one column after the aperture array 103 in FIG. Each function will be described with reference to FIG. The substantially parallel electron beam from the condenser lens 102 (FIG. 2) is divided into a plurality of electron beams by the aperture array 103. The divided electron beam forms an intermediate image of the electron source on the corresponding blanker of the blanker array 107 via the electrostatic lens of the corresponding lens array 104.

  At this time, the deflector arrays 105 and 106 individually adjust the position of the intermediate image of the electron source formed on the blanker array 107 (position in the plane orthogonal to the optical axis). Further, since the electron beam deflected by the blanker array 107 is blocked by the blanking aperture AP of FIG. 2, the wafer 4 is not irradiated. On the other hand, the electron beam that is not deflected by the blanker array 107 is not blocked by the blanking aperture AP in FIG.

Returning to FIG. 2, a plurality of intermediate images of the electron source formed by the multi-source module 1 are projected onto the wafer 4 via two magnetic field lenses corresponding to the magnetic field lens array 21 and the magnetic field lens array 22.
At this time, among the optical characteristics when a plurality of intermediate images are projected onto the wafer 4, the rotation and magnification of the image can be adjusted by the deflector arrays 104 and 105 that can adjust the position of each intermediate image on the blanker array 107. The focal position can be adjusted by dynamic focus lenses (electrostatic or magnetic lens) 108 and 109 provided for each column.

  Next, a system configuration diagram of this embodiment is shown in FIG. The blanker array control circuit 41 is a circuit that individually controls a plurality of blankers that constitute the blanker array 107, the deflector array control circuit 42 is a circuit that individually controls the deflectors that constitute the deflector arrays 104 and 105, and D_FOCUS. The control circuit 43 is a circuit that individually controls the dynamic focus lenses 108 and 109, the main deflector control circuit 44 is a circuit that controls the main deflector 3, and the reflected electron detection circuit 45 is a signal from the reflected electron detector 7. Is a circuit for processing. These blanker array control circuit 41, deflector array control circuit 42, D_FOCUS control circuit 43, main deflector control circuit 44, and backscattered electron detection circuit 45 are provided as many as the number of columns (col. 1 to col. 9). Has been.

  The magnetic lens array control circuit 46 controls the common coils of the magnetic lens arrays 21, 22, 23, and 24, and the stage drive control circuit 47 cooperates with a laser interferometer (not shown) that detects the position of the stage. The control circuit that drives and controls the stage 5. The main control system 48 controls the plurality of control circuits and manages the entire electron beam exposure apparatus.

  As described above, according to the above-described embodiment, the charged particle beam deflector can reduce the possibility of charge-up due to the irradiation of the charged particle beam, and a stable operation can be expected. In addition, a deflector having a simple structure can be provided. Further, by using this deflector in a charged particle beam exposure apparatus, a highly reliable exposure apparatus can be provided.

[Third embodiment] (Device production method)
Next, an embodiment of a device production method using the electron beam exposure apparatus described above will be described.
FIG. 10 shows a manufacturing flow of a microdevice (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.). In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (EB data conversion), exposure control data for the exposure apparatus is created based on the designed circuit pattern. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the wafer and the exposure apparatus to which the prepared exposure control data is input. The next step 5 (assembly) is referred to as a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), and the like. including. In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, the semiconductor device is completed and shipped (step 7).

FIG. 11 shows a detailed flow of the wafer process. In step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern is printed onto the wafer by exposure using the exposure apparatus described above. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeatedly performing these steps, multiple circuit patterns are formed on the wafer.
By using the manufacturing method of the present embodiment, a highly integrated microdevice that has been difficult to manufacture can be manufactured at low cost.

[Scope of invention]
In the above, an example in which the electrode substrate of the present invention is used as a deflector constituting a blanker has been shown, but the present invention can also be used as an electrode substrate or deflector constituting an electron lens that converges or diverges charged particles. Can do. In the above description, an example in which deflectors are arranged for 9 columns of 3 × 3 is shown, but the number of columns is not limited. Currently, thousands to thousands of columns are common. Moreover, the shape of a convex part is not restricted to the rectangle shown in FIG.5 and FIG.6 (b), and the triangle shown to Fig.6 (a). For example, other shapes such as a circle, an ellipse, or a part thereof, a shape in which the tip of the rectangle or the apex angle of the triangle is R, another polygon, or a shape obtained by rounding it may be used. Moreover, although the example of arrange | positioning the position of a convex part in the corner | angular part of a basic convex polygon was shown in the above-mentioned, you may arrange | position to the side of a basic convex polygon. This is particularly effective when a plurality of electrodes are arranged on the same surface of the side wall of the through hole. Furthermore, the basic shape of the through-hole itself may be a curved surface such as a circle or an ellipse that is a convex polygon having an infinite number of corners.

It is a figure which shows the principal part outline of the electron beam exposure apparatus which concerns on one Example of this invention. It is a figure explaining the function of the multi source module of the apparatus of FIG. It is a figure explaining the electron optical system for every column of the apparatus of FIG. It is a figure explaining the system configuration | structure of the apparatus of FIG. It is a figure explaining an example of the structure of the deflector used with the apparatus of FIG. It is a figure explaining the other example of the structure of the deflector used with the apparatus of FIG. It is a figure explaining an example of the manufacturing method of the deflector used with the apparatus of FIG. It is a figure explaining an example of the manufacturing method of the deflector used with the apparatus of FIG. It is a figure explaining the background art of this invention. It is a figure explaining the flow of the manufacturing process of a device. It is a figure explaining the wafer process in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Multi-source module 21, 22, 23, 24 Magnetic lens array 3 Main deflector 4 Wafer 5 Stage 6 Stage reference plate 7 Reflected electron detector 101 Electron source 102 Condenser lens 103 Aperture array 104 Lens array 105, 106 Deflector array 107 Blanker arrays 108 and 109 Dynamic focus lens 41 Blanker array control circuit 42 Deflector array control circuit 43 D_FOCUS control circuit 44 Main deflection control circuit 45 Reflected electron detection circuit 46 Magnetic lens array control circuit 47 Stage drive control circuit 48 Main control system 500 Deflection Device 501 Substrate 502a, 502b Wiring 503a, 503b Deflection electrode 504 Insulating layer 505a, 505b Shield electrode 506a, 506b Wiring 507 Silicon dioxide 51 a, 510b pad 511 power 513 through opening ES electron source ML1, ML2, ML3, ML4 magnetic lens MD magnetic disc CC common coil

Claims (19)

An electrode substrate having a substrate having a through hole and a plurality of electrodes arranged on a side wall of the through hole,
The shape of the surface parallel to the cross section of the substrate of the through-opening Ri shape der provided with a convex portion on a part of the convex polygon,
Wherein a plurality of electrodes, a first electrode pair, the first electrode substrate, characterized in Rukoto and a second electrode pair provided separately from the electrode pairs disposed opposite each other.   The electrode substrate according to claim 1, wherein at least one of the convex portions is located between the electrodes.   The electrode substrate according to claim 1, wherein the convex portion is provided at a corner portion of the convex polygon.   The electrode substrate according to claim 1, wherein the substrate is a silicon substrate.   The electrode substrate according to claim 1, wherein at least one of the electrodes includes a noble metal on an exposed surface thereof.   The electrode substrate according to any one of claims 1 to 5, wherein a plurality of through-holes in which the electrodes are arranged are arranged one-dimensionally or two-dimensionally. 7. The through hole has a pair of first side wall surfaces parallel to each other, and the first electrode pair is disposed on the first side wall surface so as to face each other. The electrode substrate according to any one of the above. The through hole has a pair of second side wall surfaces perpendicular to the first side wall surface, and the second electrode pair is disposed on the second side wall surface so as to face each other. The electrode substrate according to claim 7. An electrode substrate having a substrate having a through hole and a plurality of electrodes arranged on a side wall of the through hole,
The shape of the cross section of the through hole parallel to the surface of the substrate is a shape in which a convex portion is provided in a part of a convex polygon,
As the plurality of electrodes, a first electrode pair provided facing each other, and a second electrode pair provided separately from the first electrode pair,
An electrode substrate, wherein at least one convex portion is located between each electrode. The electrode substrate according to claim 1, further comprising an insulating layer on a contact surface between at least one electrode of the first electrode pair and the substrate. The electrode substrate according to claim 10 , wherein the insulating layer is silicon dioxide. A manufacturing method of an electrode substrate according to claim 1 to 11,
Forming the through hole in the substrate using photolithography;
Forming an insulating layer on the side wall of the through hole;
Forming at least one electrode on the side wall of the through-hole. The manufacturing method according to claim 12 , wherein the step of forming the through hole includes a reactive ion etching step. Wherein the substrate is silicon, the manufacturing method according to claim 12 or 13 forming an insulating layer on the sidewall of the through hole is characterized in that it comprises a thermal oxidation process. The manufacturing method according to any one of claims 12 to 14 , wherein at least one of the electrodes is formed by a process including any one of a sputtering process and a vapor deposition process. 12. An electrode substrate according to any one of claims 1 to 11 , and a potential applying means for applying a potential to at least one electrode of the first electrode pair independently of the other electrode. To deflector. The deflector according to claim 16, wherein the second electrode pair is electrically grounded. A charged particle beam exposure apparatus that exposes a substrate to be exposed using a charged particle beam,
A charged particle source emitting a charged particle beam;
A first electron optical system for forming a plurality of intermediate images of the charged particle source;
A second electron optical system that projects a plurality of intermediate images formed by the first electron optical system onto a wafer;
A positioning device for positioning the wafer;
A charged particle beam exposure apparatus, wherein the first electron optical system includes the deflector according to claim 16 or 17 . A device manufacturing method comprising manufacturing a device using the charged particle beam exposure apparatus according to claim 18 .

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