JP2004152504A - Deflector, method for manufacturing deflector, and charged particle beam exposure apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a deflector for accurately deflecting a charged particle beam. <P>SOLUTION: A blanking aperture array device 26 which is an example of a deflector for deflecting the particle beam comprises: a substrate 202 with an opening 200 through which the particle beam should pass; a deflection electrode 204 disposed on a side surface within the opening 200 so as to deflect the particle beam; a conductive electrode extending part 206 which extends from the opening 200 outward; and a ground layer(s) 208 formed on an upper surface and/or a lower surface of the array device 26. The extending part 206 is formed so as to cover above an end part(s) of the ground layer(s) 208. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a charged particle beam exposure apparatus that exposes a pattern of a semiconductor integrated circuit or the like onto a wafer. In particular, the present invention relates to a deflector of a charged particle beam exposure apparatus that exposes a pattern using a plurality of charged particle beams, and a method of manufacturing the deflector.
[0002]
[Prior art]
In recent years, along with the progress of miniaturization of semiconductor devices, various lithography means of 100 nm or less have been proposed, and further, high resolution, high-accuracy drawing pattern superposition, and high throughput are required. For this reason, an electron beam exposure apparatus that has potentially high resolution and good dimensional controllability compared to other exposure means can directly generate an exposure pattern and directly expose the wafer, so that maskless exposure is possible. It is also expected as a means.
[0003]
However, the electron beam exposure apparatus has a problem that the exposure area per shot is small and the throughput is low, and the fact is that it is not widely used in mass production of semiconductor devices. In order to solve this problem, there has been proposed a multi-electron beam exposure apparatus for simultaneously exposing a wafer with a plurality of electron beams.
[0004]
Such a multi-electron beam exposure apparatus has a blanking aperture array device for switching whether or not to independently deflect a plurality of electron beams, and intercepts an electron beam deflected by the blanking aperture array device with respect to a wafer. An electron beam shielding unit is provided to control with high accuracy whether each of the plurality of electron beams is irradiated on the wafer. Such a blanking aperture array device includes a substrate such as a semiconductor provided with a plurality of openings, a deflection electrode provided in each of the openings, and an insulating layer insulating the substrate and the deflection electrode. Controls whether or not to deflect the electron beam passing through the aperture depending on whether or not a voltage is applied to the aperture.
[0005]
[Problems to be solved by the invention]
However, in the structure of the conventional blanking aperture array device, a part of the substrate or the insulating layer is exposed on the upper surface of the device or on the inner wall of the opening through which the electron beam passes. As a result, the exposed oxide film or insulating layer of the substrate is charged up, which affects the electron beam passing through the opening. As a result, appropriate deflection and position control of the electron beam are not performed, and it becomes difficult to accurately expose the wafer.
[0006]
Therefore, an object of the present invention is to provide a deflector, a method of manufacturing the deflector, and a charged particle beam exposure apparatus that can solve the above-described problems. This object is achieved by a combination of features described in the independent claims. The dependent claims define further advantageous embodiments of the present invention.
[0007]
[Means for Solving the Problems]
That is, according to the first aspect of the present invention, the deflector for deflecting the charged particle beam includes a substrate provided with an opening through which the charged particle beam passes, and a deflector provided on a side surface in the opening to deflect the charged particle beam. And a conductive electrode extension extending from the deflection electrode and extending outward from the opening.
[0008]
The deflector further includes a ground layer provided on an upper surface and / or a lower surface of the deflector with respect to the traveling direction of the charged particle beam, and the electrode extension is provided so as to cover above an end of the ground layer. It may be. In addition, the insulating layer is exposed between the ground layer and the electrode extension, and the electrode extension is provided above and below the exposed insulating layer to prevent the charged particle beam from being irradiated on the exposed insulating layer. It may be provided so as to cover above the end of the ground layer.
[0009]
The deflection electrode and the electrode extension are conductors mainly made of gold, and the deflector is provided between the deflection electrode and the electrode extension, a titanium layer in contact with the deflection electrode, and a platinum layer in contact with the electrode extension and the titanium layer. And a layer.
[0010]
The deflection electrode and the electrode extension are conductors mainly made of gold, and the deflector has a titanium layer in contact with the deflection electrode, a chromium layer in contact with the electrode extension, between the deflection electrode and the electrode extension, It may further include a platinum layer in contact with the titanium layer and the chromium layer.
[0011]
According to a second aspect of the present invention, there is provided a method of manufacturing a deflector including a substrate provided with an opening through which a charged particle beam passes, and a deflection electrode provided on a side surface in the opening to deflect the charged particle beam. Comprises forming a deflection electrode, forming an extension portion that forms a conductive electrode extension extending from the deflection electrode and extending outward from the opening, and forming an opening.
[0012]
The extension forming step includes forming a ground layer on the upper surface and / or lower surface of the deflector with respect to the traveling direction of the charged particle beam, and at least a part of the insulating layer exposed between the ground layer and the electrode extension. Forming a sacrificial layer that covers the end of the ground layer, and forming an electrode extension on the upper surface of the sacrificial layer so as to cover the exposed insulating layer and the end of the ground layer. Removing the sacrificial layer.
[0013]
According to a third aspect of the present invention, there is provided a charged particle beam exposure apparatus including a deflector for deflecting a charged particle beam and exposing a wafer with the charged particle beam, wherein the deflector has an opening through which the charged particle beam passes. And a deflection electrode provided on a side surface in the opening to deflect the charged particle beam, and a conductive electrode extension extending from the deflection electrode and extending outward from the opening.
[0014]
Note that the above summary of the present invention does not list all of the necessary features of the present invention, and a sub-combination of these features may also be an invention.
[0015]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, the present invention will be described through embodiments of the present invention. However, the following embodiments do not limit the invention according to the claims, and all of the combinations of the features described in the embodiments are not limited thereto. It is not always essential to the solution of the invention.
[0016]
FIG. 1 shows an example of the configuration of an electron beam exposure apparatus 100 according to one embodiment of the present invention. The electron beam exposure apparatus 100 is an example of the charged particle beam exposure apparatus of the present invention. Further, the charged particle beam exposure apparatus of the present invention may be an ion beam exposure apparatus that exposes a wafer with an ion beam. Further, the electron beam exposure apparatus 100 may generate a plurality of electron beams at a narrow interval, for example, an interval at which all the electron beams are irradiated on a region of one chip to be provided on the wafer.
[0017]
The electron beam exposure apparatus 100 includes an exposure unit 150 for performing a predetermined exposure process on the wafer 44 with an electron beam, and a control unit 140 for controlling the operation of each component included in the exposure unit 150.
[0018]
The exposure unit 150 generates a plurality of electron beams inside the housing 8, and determines whether or not to irradiate the wafer 44 with the plurality of electron beams and an electron beam forming unit 110 that shapes a desired cross-sectional shape of the electron beam. An irradiation switching means 112 for independently switching for each electron beam, an electron optical system including a wafer projection system 114 for adjusting the direction and size of an image of a pattern transferred to the wafer 44, and a wafer 44 on which a pattern is to be exposed. A stage system having a wafer stage 46 on which the wafer stage 46 is mounted and a wafer stage driving unit 48 for driving the wafer stage 46;
[0019]
The electron beam shaping means 110 includes an electron beam generator 10 for generating a plurality of electron beams, a first shaping member 14 having a plurality of openings for shaping the cross-sectional shape of the electron beam by passing the electron beams, and (2) a forming member 22, a first multi-axis electron lens 16 for independently focusing a plurality of electron beams and adjusting the focus of the electron beam, and a first multi-axis electron lens 16 for independently deflecting the plurality of electron beams passing through the first forming member 14. It has a first shaping deflection unit 18 and a second shaping deflection unit 20. The electron beam generator 10 is an example of a charged particle beam generator. The first shaping deflecting unit 18 and the second shaping deflecting unit 20 are examples of the deflector of the present invention.
[0020]
The electron beam generator 10 has a plurality of electron guns 104 and a base material 106 on which the electron guns 104 are formed. The electron gun 104 has a cathode 12 for generating thermoelectrons, and a grid 102 formed so as to surround the cathode 12 and for stabilizing thermoelectrons generated by the cathode 12. The electron beam generator 10 forms an electron gun array by having a plurality of electron guns 104 provided at predetermined intervals on a base material 106.
[0021]
It is desirable that the first molding member 14 and the second molding member 22 have a grounded metal film such as platinum on the surface irradiated with the electron beam. The cross-sectional shapes of the plurality of openings included in the first forming member 14 and the second forming member 22 may have a spread along the irradiation direction of the electron beam in order to efficiently pass the electron beam. Further, it is preferable that the plurality of openings included in the first molding member 14 and the second molding member 22 be formed in a rectangular shape.
[0022]
The irradiation switching means 112 independently focuses the plurality of electron beams, adjusts the focus of the electron beams, and deflects the plurality of electron beams independently for each electron beam. Aperture beam array device 26 for independently switching whether or not to irradiate wafer 44 with each electron beam, and electron beam deflected by blanking aperture array device 26 including a plurality of openings for passing the electron beam. And an electron beam shielding member 28 for shielding the light. The blanking aperture array device 26 is an example of the deflector of the present invention.
[0023]
The blanking aperture array device 26 has a substrate provided with an opening through which an electron beam passes, and a plurality of deflection electrodes provided in the opening. Further, the cross-sectional shape of the plurality of openings included in the electron beam shielding member 28 may have a spread along the electron beam irradiation direction in order to allow the electron beam to pass efficiently.
[0024]
The wafer projection system 114 independently focuses the plurality of electron beams and reduces the irradiation diameter of the electron beam, and the third multi-axis electron lens 34, and independently focuses the plurality of electron beams to adjust the focus of the electron beam. A fourth multi-axis electron lens 36, a sub-deflecting unit 38 which is an independent deflecting unit for independently deflecting a plurality of electron beams to a desired position on the wafer 44 for each electron beam, and a first deflecting unit 38 for focusing the electron beams. It has a coaxial lens 52 having a coil 40 and a second coil 50 and functioning as an objective lens, and a main deflecting unit 42 that is a common deflecting unit that deflects a plurality of electron beams by a desired amount in substantially the same direction. The main deflection unit 42 is an example of the deflector of the present invention.
[0025]
The main deflecting unit 42 is preferably an electrostatic deflector capable of deflecting a plurality of electron beams at a high speed using an electric field, and has deflecting electrodes facing each other. The main deflecting unit 42 may have a cylindrical uniform octapole configuration including four pairs of deflecting electrodes facing each other, or a configuration including eight or more deflecting electrodes. The blanking aperture array device 26 has a pair of deflecting electrodes facing each other. Further, it is preferable that the coaxial lens 52 be provided closer to the wafer 44 than the fourth multi-axis electron lens 36.
[0026]
The control unit 140 includes an overall control unit 130 and an individual control unit 120. The individual control unit 120 includes an electron beam control unit 80, a multi-axis electron lens control unit 82, a shaping deflection control unit 84, a blanking aperture array control unit 86, a coaxial lens control unit 90, a sub deflection control unit 92, and a main deflection control unit. 94 and a wafer stage control unit 96. The general control unit 130 is, for example, a workstation, and performs general control of each control unit included in the individual control unit 120.
[0027]
The electron beam controller 80 controls the electron beam generator 10. The multi-axis electronic lens control unit 82 controls a current supplied to the first multi-axis electronic lens 16, the second multi-axis electronic lens 24, the third multi-axis electronic lens 34, and the fourth multi-axis electronic lens 36. The shaping / deflecting control unit 84 controls the first shaping / deflecting unit 18 and the second shaping / deflecting unit 20. The blanking aperture array controller 86 controls the voltage applied to the deflection electrodes included in the blanking aperture array device 26. The coaxial lens control unit 90 controls a current supplied to the first coil 40 and the second coil 50 included in the coaxial lens 52. The main deflection control unit 94 controls a voltage applied to a deflection electrode included in the main deflection unit 42. The wafer stage control unit 96 controls the wafer stage drive unit 48 to move the wafer stage 46 to a predetermined position.
[0028]
The operation of the electron beam exposure apparatus 100 will be described. First, the electron beam generator 10 generates a plurality of electron beams. The electron beam generated by the electron beam generator 10 is applied to the first forming member 14 to be formed. The plurality of electron beams that have passed through the first forming member 14 each have a rectangular cross-sectional shape corresponding to the shape of the opening provided in the first forming member 14.
[0029]
The first multi-axis electron lens 16 independently focuses a plurality of rectangularly shaped electron beams, and independently adjusts the focus of the electron beam on the second forming member 22 for each electron beam. The first shaping deflection unit 18 deflects a plurality of rectangularly shaped electron beams to a desired position with respect to the second shaping member independently for each electron beam. The second shaping / deflecting unit 20 deflects the plurality of electron beams deflected by the first shaping / deflecting unit 18 in a direction substantially perpendicular to the second shaping member 22 for each electron beam. As a result, the adjustment is performed so that the electron beam is applied to a desired position of the second molding member 22 substantially perpendicularly to the second molding member 22. The second forming member 22 including a plurality of openings having a rectangular shape is used to form a plurality of electron beams having a rectangular cross-sectional shape applied to each opening into a desired rectangular cross-sectional shape to be applied to the wafer 44. It is further shaped into an electron beam.
[0030]
The second multi-axis electron lens 24 independently focuses the plurality of electron beams, and independently adjusts the focus of the electron beam with respect to the blanking aperture array device 26 for each electron beam. The electron beam focused by the second multi-axis electron lens 24 passes through a plurality of openings provided in the blanking aperture array device 26.
[0031]
The blanking aperture array control unit 86 controls whether or not to apply a voltage to a deflection electrode provided in each opening formed in the blanking aperture array device 26. The blanking aperture array device 26 switches whether or not to irradiate the wafer 44 with the electron beam based on the voltage applied to the deflection electrode. When a voltage is applied to the deflection electrode, the electron beam that has passed through the opening of the blanking aperture array device 26 is deflected, cannot pass through the opening included in the electron beam shielding member 28, and does not irradiate the wafer 44. When no voltage is applied to the deflecting electrode, the electron beam passing through the opening of the blanking aperture array device 26 is not deflected, passes through the opening included in the electron beam shielding member 28, and irradiates the wafer 44. .
[0032]
The third multi-axis electron lens 34 reduces the diameter of an electron beam that is not deflected by the blanking aperture array device 26 and passes the electron beam through an opening included in the electron beam shielding member 28. The fourth multi-axis electron lens 36 independently focuses the plurality of electron beams, independently adjusts the focus of the electron beam with respect to the sub-deflecting unit 38 for each electron beam, and outputs the adjusted electron beam to the sub-deflector. The light enters the deflector included in the deflecting unit 38.
[0033]
The sub-deflection control unit 92 controls the plurality of deflectors included in the sub-deflection unit 38 independently. The sub deflection unit 38 deflects the plurality of electron beams incident on the plurality of deflectors to a desired exposure position on the wafer 44 independently for each electron beam. The plurality of electron beams that have passed through the sub-deflection unit 38 are adjusted in focus on the wafer 44 by a coaxial lens 52 having a first coil 40 and a second coil 50, and are irradiated on the wafer 44.
[0034]
During the exposure processing, the wafer stage control unit 96 controls the wafer stage driving unit 48 to move the wafer stage 46 in a certain direction. The blanking aperture array control unit 86 determines the openings through which the electron beam passes based on the exposure pattern data, and performs power control on the deflection electrodes provided in each opening. In accordance with the movement of the wafer 44, the opening through which the electron beam passes is appropriately changed, and the electron beam is deflected by the main deflecting unit 42 and the sub-deflecting unit 38, thereby exposing the wafer 44 to a desired circuit pattern. It becomes possible.
[0035]
FIG. 2 shows an example of the configuration of the blanking aperture array device 26. The blanking aperture array device 26 includes a deflecting electrode pad 162 and a ground electrode pad 164 serving as connecting portions of an aperture section 160 provided with a plurality of openings through which electron beams pass, and a blanking aperture array control section 86 in FIG. And The aperture section 160 is desirably arranged at the center of the blanking aperture array device 26. The deflection electrode pad 162 and the ground electrode pad 164 supply the electric signal supplied from the blanking aperture array control unit 86 via a probe card, a pogo pin array, or the like to the deflection electrode provided in the opening of the aperture unit 160. .
[0036]
FIG. 3 shows an example of the configuration of the aperture section 160. The horizontal direction of the aperture section 160 is defined as the x-axis direction, and the vertical direction is defined as the y-axis direction. The x axis indicates the direction in which the wafer stage 46 moves the wafer 44 stepwise during the exposure processing, and the y axis indicates the direction in which the wafer stage 46 continuously moves the wafer 44 during the exposure processing. Specifically, with respect to the wafer stage 46, the y-axis is a direction in which the wafer 44 is scanned and exposed, and the x-axis is a stepwise exposure of the wafer 44 to expose an unexposed area of the wafer 44 after the scanning exposure. The direction to move.
[0037]
The aperture section 160 is provided with openings 200 through which a plurality of electron beams respectively pass. The plurality of openings 200 are arranged so as to expose the entire scanning area. For example, the plurality of openings 200 are arranged so as to cover the entire area between the plurality of openings 200a and 200b located at both ends in the x-axis direction. The openings 200 that are close to each other in the x-axis direction are preferably arranged at regular intervals. At this time, the interval between the plurality of openings 200 is preferably set to be equal to or less than the maximum deflection amount at which the main deflection unit 42 deflects the electron beam.
[0038]
FIG. 4 is a cross-sectional view showing an example of a specific configuration of the blanking aperture array device 26.
[0039]
The blanking aperture array device 26 is provided with a substrate 202 provided with an opening 200 through which an electron beam passes, a deflection electrode 204 provided on a side surface in the opening 200 to deflect the electron beam, and an extension from the deflection electrode 204. And a conductive electrode extension 206a and an electrode extension 206b that extend outward from the opening 200. Specifically, the substrate 202 is formed of a silicon substrate. The deflection electrode 204 is preferably formed by electroplating a conductive material mainly containing gold. The electrode extension portion 206b is preferably formed by depositing a conductive material mainly containing gold by a sputtering method. The deflection electrode 204 and the electrode extension 206 may be made of copper as another example. In this case, it is preferable that the surface is plated with a conductive material mainly containing gold.
[0040]
The substrate 202 has an insulating layer 210. Insulating layer 210 is preferably formed of silicon oxide. The blanking aperture array device 26 further includes a wiring layer 216 connected to the deflection electrode 204 on the insulating layer 210. The wiring layer 216 has a titanium layer in contact with the deflection electrode 204 and a platinum layer in contact with the titanium layer and the electrode extension 206a. The titanium layer and the platinum layer are specifically formed by a sputtering method.
[0041]
The adhesion strength between the deflection electrode 204 and the titanium layer formed by electroplating containing gold as the main component, the adhesion strength between the titanium layer and the platinum layer, and the electrode extension portion 206a formed by sputtering and containing gold as the main component. The adhesive strength to the platinum layer is stronger than the adhesive strength when the electrode extension portion 206a is formed directly on the deflection electrode 204. Therefore, the adhesion strength between the electrode extension portion 206a and the deflection electrode 204 is improved by connecting the electrode extension portion 206a via the wiring layer 216 configured as described above.
[0042]
The blanking aperture array device 26 further includes a ground layer 208 provided on the upper surface and / or lower surface of the blanking aperture array device 26 with respect to the traveling direction of the electron beam. It is provided so as to cover above the end. The ground layer 208 includes a titanium layer, a platinum layer, and the like, each of which is formed by a sputtering method.
[0043]
The insulating layer 214 or the insulating layer 212 is exposed between the ground layer 208 and the electrode extension 206, and the electrode extension 206 reflects the electron beam from a blanking aperture array, a polarizer, a wafer, or the like. In order to prevent the scattered electrons from colliding with the exposed insulating layer 214 or the insulating layer 212, the scattered electrons cover the exposed insulating layer 214 and the insulating layer 212 and above the end of the ground layer 208. It is provided as follows. In addition, the blanking aperture array device 26 may further include an insulating layer 212 that insulates the substrate 202 and the deflection electrode 204. In this case, the electrode extension portion 206b is provided above the insulating layer 212 in order to prevent the electron beam from being irradiated on the insulating layer 212. The insulating layers 214 and 212 are preferably formed using silicon oxide.
[0044]
According to the blanking aperture array device 26 formed as described above, the electrode extension portion 206 prevents the electron beam from being directly or indirectly applied to the exposed insulating layer 214 or 212. Since the insulating layer 214 and the insulating layer 212 are provided so as to cover over the exposed insulating layer 214 and the insulating layer 212, irradiation of the insulating layer 212 and the insulating layer 214 with an electron beam can be prevented. Further, the electrode extension 206a also covers the insulating layer 214 in a direction perpendicular to the traveling direction of the electron beam, that is, in a direction from the opening 200 to the insulating layer 214. As a result, the electron beam reaching the insulating layers 212 and 214 is significantly reduced.
[0045]
Therefore, according to the blanking aperture array device 26 of the present embodiment, the influence on the electron beam due to the charge-up of the insulating layer 212 and the insulating layer 214 can be greatly reduced, and the electron beam is accurately deflected. be able to. Further, according to the electron beam exposure apparatus 100 using the blanking aperture array device 26 of the present embodiment, the wafer 44 can be exposed with the electron beam deflected with high accuracy. In this embodiment, the traveling direction of the electron beam may be either the up or down direction with respect to the blanking aperture array device 26 shown in FIG.
[0046]
The blanking aperture array device 26 includes a connection layer 218 having a titanium layer in contact with the deflection electrode 204 and a platinum layer in contact with the electrode extension 206b and the titanium layer between the deflection electrode 204 and the electrode extension 206b. Further provision. The titanium layer and the platinum layer are specifically formed by a sputtering method.
[0047]
The adhesion strength between the deflection electrode 204 formed by electroplating containing gold as a main component and the titanium layer, the adhesion strength between the titanium layer and the platinum layer, and the electrode extension portion 206 formed by a sputtering method containing gold as a main component The adhesive strength between the electrode and the platinum layer is higher than the adhesive strength when the electrode extension portion 206b is formed directly on the deflection electrode 204. Therefore, the connection layer 218 can improve the adhesion strength of the electrode extension portion 206b to the deflection electrode 204.
[0048]
FIG. 5 is a cross-sectional view showing another example of the specific configuration of the blanking aperture array device 26. The blanking aperture array device 26 according to this example has the same configuration as that of FIG. 4 except for the following description. According to this example, the blanking aperture array device 26 is replaced with the electrode extension portion 206 of FIG. 4, and extends inward from the ground layer 208 toward the opening 200 to expose the electron beam to the insulating layer 214 or the insulating layer. In order to prevent direct or indirect irradiation of the electrode 212, it is provided so as to cover the exposed insulating layer 214 and the insulating layer 212 and the deflection electrode 204.
[0049]
6, 7, 8, 9, 10, and 11 show an example of a method of manufacturing the blanking aperture array device 26 according to the present embodiment described with reference to FIG.
[0050]
First, as shown in FIG. 6A, a substrate 202 is prepared, and an insulating layer 210 is formed on one surface of the substrate 202. The substrate 202 is, for example, a silicon wafer having a diameter of 6 inches and a thickness of 200 μm. The insulating layer 210 is formed by forming silicon oxide (SiO ₂ ) by plasma CVD, for example.
[0051]
Next, as shown in FIG. 6B, a resist 220 is applied on the insulating layer 210, exposed and developed to remove the resist 220 in a region where the wiring layer 216 is to be formed. The shape of the resist 220 is desirably an inverted tapered shape in which the side closer to the substrate 202 is more removed. Then, the wiring layer 216a is formed on the insulating layer 210 using the resist 220 as a mask. Specifically, titanium, platinum, and chromium are deposited in this order by a vapor deposition method to form a wiring layer 216a that is a stacked film of titanium, platinum, and chromium.
[0052]
Next, as shown in FIG. 6C, the resist 220 in FIG. 6B and the wiring layer 216b laminated thereon are removed by, for example, lift-off. The formation of the wiring layer 216a may be performed by photolithography instead of the lift-off in this embodiment. However, since the wiring layer 216 is a multilayer metal, the lift-off process is simpler.
Next, as shown in FIG. 6D, an insulating layer 214 is formed over the insulating layer 210 and the wiring layer 216. Specifically, the insulating layer 214 which is a silicon oxide film is formed by a plasma CVD method or the like.
[0053]
Next, as shown in FIG. 6E, a resist 222 is applied, exposed, and developed to remove the resist 222 in a region where the insulating layer 212 is formed. Then, using the resist 222 as an etching mask, the portion of the substrate 202 where the insulating layer 212 is to be formed is etched, for example, by reactive ion etching (RIE) to form an opening 300. The insulating layer 210 becomes an etching stopper layer when the substrate 202 is etched.
[0054]
Next, as shown in FIG. 7A, the insulating layer 212 is formed in the opening 300. Specifically, the opening 300 is filled with silicon oxide by using a TEOS CVD method or the like which is excellent in embedding property.
Next, as shown in FIG. 7B, unnecessary silicon oxide is removed by polishing, for example, by a chemical mechanical polishing (CMP) method.
[0055]
Next, as shown in FIG. 7C, a resist 224 is applied on the substrate 202, exposed and developed, and the resist 224 in a region where the deflection electrode 204 is to be formed is removed. Then, using the resist 224 as an etching mask, the portion of the substrate 202 where the deflection electrode 204 is to be formed is selectively removed by etching, for example, RIE to form the opening 302. The insulating layer 210 becomes an etching stopper layer when the substrate 202 is etched.
[0056]
Next, as shown in FIG. 7D, a metal such as Cr is deposited on the upper surfaces of the substrate 202 and the insulating layer 212 and inside the opening 302 by a sputtering method, so that a conductive film 226 is formed.
Next, as shown in FIG. 7E, the conductive film 226 on the upper surfaces of the substrate 202 and the insulating layer 212 and on the bottom surface of the opening 302 is removed by, for example, RIE.
[0057]
Next, as shown in FIG. 8A, the insulating layer 210, which is a silicon oxide film, is etched until the wiring layer 216 is exposed at the bottom of the opening 302, and the exposed chrome layer of the wiring layer 216 is removed by, for example, RIE. .
Next, as shown in FIG. 8B, a portion where the deflection electrode 204 is to be formed is filled with a conductive material by selectively electroplating the inside of the opening 302 using the wiring layer 216 as a plating electrode (seed layer). For example, Cu, Au, or the like is filled in the opening 302 by electrolytic plating.
Next, as shown in FIG. 8C, the conductive material formed in the step shown in FIG. 8B and projecting on the upper surface of the substrate 202 is polished and removed by, for example, a chemical mechanical polishing (CMP) method. Thereby, the deflection electrode 204 is formed.
[0058]
Next, as shown in FIG. 8D, a resist 230 is applied, exposed, and developed to remove the resist 230 in a region where the ground layer 208 and the connection layer 218 are formed. At this time, the shape of the resist 230 is desirably an inverted tapered shape in which the side closer to the substrate 202 is further removed. Then, the ground layer 208 and the connection layer 218 are formed using the resist 230 as a mask. Specifically, Ti and Pt are formed in this order by a vapor deposition method, and the ground layer 208 and the connection layer 218, which are stacked films of Ti and Pt, are formed. By this step, the ground layers 208 are formed on the upper and lower surfaces of the blanking aperture array device 26 in the traveling direction of the electron beam.
[0059]
Next, as shown in FIG. 9A, the resist 230 in FIG. 8D and the conductive layer 232 laminated thereon are removed by, for example, lift-off.
Next, as shown in FIG. 9B, a resist 234 is applied on the blanking aperture array device 26, exposed and developed to remove the resist 234 in a region where the electrode extension 206a is to be formed. Then, using the resist 234 as an etching mask, the portion of the insulating layer 214 where the electrode extension portion 206a is to be formed is selectively removed by etching, for example, RIE to form the opening 236. The wiring layer 216 serves as an etching stopper layer when the insulating layer 214 is etched.
[0060]
Next, as shown in FIG. 9C, a sacrificial layer 238 that covers at least a part of the insulating layer 212 and the insulating layer 214 exposed between the ground layer 208 and the electrode extension 206 is formed. Specifically, a negative resist is applied to the upper and lower surfaces of the blanking aperture array device 26, exposed and developed, and unnecessary portions of the resist are removed to form the sacrificial layer 238.
[0061]
Next, as shown in FIG. 9D, a positive resist 240 is applied to the upper surface and the lower surface of the blanking aperture array device 26, and is exposed and developed to remove the resist 240 in a region where the electrode extension 206 is formed. . At this time, the shape of the resist 240 is desirably an inverted tapered shape in which the side closer to the substrate 202 is further removed. Next, Au is deposited on the upper surfaces of the sacrifice layer 238 and the insulating layer 240 by a sputtering method or evaporation, and the upper surface of the sacrifice layer 238 is formed between the exposed portions of the insulating layers 212 and 214 and the end of the ground layer 208. An electrode extension 206 is formed so as to cover the upper side. By this step, a conductive electrode extension 206 extending from the deflection electrode 204 and extending outward from the opening 200 is formed. The negative resist applied to form the sacrificial layer 238 in the step of FIG. 9C is a resist that does not dissolve when a positive resist is applied in the step of FIG. 9D.
[0062]
Next, as shown in FIG. 10A, the resist 240 in FIG. 9D and the metal layer laminated thereon are removed by, for example, lift-off.
Next, as shown in FIG. 10B, for example, a positive resist 242 is applied on the blanking aperture array device 26, exposed and developed to form a resist 242 in a region where an opening 244 slightly smaller than the opening 200 is formed. Is removed.
Next, as shown in FIG. 10C, using the resist 242 as an etching mask, the portion of the substrate 202 where the opening 244 is to be formed is selectively removed by etching, for example, RIE. The insulating layer 210, which is a silicon oxide film, becomes an etching stopper layer when the substrate 202 is etched.
[0063]
Next, as shown in FIG. 10D, a wax 248 is applied to a side of the blanking aperture array device 26 opposite to the opening 244. The wax 248 is applied for the purpose of preventing the blanking aperture array device 26 from being damaged in a subsequent step. Next, the substrate 202 interposed between the deflection electrode 204 and the opening 244 is removed by etching with a mixed solution of hydrofluoric acid and nitric acid until the conductive film 226 is exposed in the opening 244.
[0064]
Next, as shown in FIG. 11A, the conductive film 226 exposed to the opening 244 is formed on the opening 244 by wet etching using a mixed solution of cerium (IV) ammonium nitrate, perchloric acid, and water, for example. Etch and remove until exposed.
Next, as shown in FIG. 11B, using the resist 242 as an etching mask, portions of the insulating layer 210 and the insulating layer 214 where the opening 200 is to be formed are selectively removed by wet etching or RIE using hydrofluoric acid. The opening 200 is formed in this step.
Next, as shown in FIG. 11C, the wax 248 is removed.
[0065]
Finally, as shown in FIG. 11D, the resist 242, which is, for example, a negative resist, and the sacrificial layer 238 are removed. Specifically, the resist 242 and the sacrifice layer 238 are removed by ashing that decomposes an organic resist into CO ₂ and H ₂ O. As described above, the blanking aperture array device 26 is completed by the manufacturing method shown in FIGS.
[0066]
According to the manufacturing method described above, the blanking aperture array device 26 described with reference to FIG. 4 can be manufactured by the semiconductor process technology.
[0067]
In order to manufacture the blanking aperture array device 26 described with reference to FIG. 5 by the semiconductor process technology, in the method of manufacturing the blanking aperture array device 26 described with reference to FIGS. Instead of removing the resist in the area where the electrode extension 206 is formed, the resist 240 in the area where the electrode extension 207 is formed in FIG. 5 may be removed.
[0068]
As described above, the present invention has been described using the embodiment. However, the technical scope of the present invention is not limited to the scope described in the embodiment. Various changes or improvements can be added to the above embodiment. It is apparent from the description of the appended claims that embodiments with such changes or improvements can be included in the technical scope of the present invention.
[0069]
【The invention's effect】
As is apparent from the above description, according to the present invention, it is possible to provide a deflector for accurately deflecting a charged particle beam, a method for manufacturing the deflector, and a charged particle beam exposure apparatus including the deflector.
[Brief description of the drawings]
FIG. 1 is a diagram showing an example of a configuration of an electron beam exposure apparatus 100.
FIG. 2 is a diagram showing an example of a configuration of a blanking aperture array device 26.
FIG. 3 is a diagram illustrating an example of a configuration of an aperture unit 160.
FIG. 4 is a cross-sectional view showing an example of a specific configuration of a blanking aperture array device 26.
FIG. 5 is a cross-sectional view showing another example of a specific configuration of the blanking aperture array device 26.
FIG. 6 is a diagram illustrating an example of a method of manufacturing the blanking aperture array device 26.
FIG. 7 is a diagram illustrating an example of a method of manufacturing the blanking aperture array device 26.
FIG. 8 is a diagram illustrating an example of a method of manufacturing the blanking aperture array device 26.
FIG. 9 is a diagram illustrating an example of a method of manufacturing the blanking aperture array device 26.
FIG. 10 is a diagram illustrating an example of a method of manufacturing the blanking aperture array device 26.
FIG. 11 is a diagram illustrating an example of a method of manufacturing the blanking aperture array device 26.
[Explanation of symbols]
8. Casing, 10 Electron beam generator, 12 Cathode, 14 First molded member, 16 First multi-axis electron lens, 18 First molded deflector, 20 Second 2 shaping deflection section, 22 second shaping member, 24 second multi-axis electron lens, 26 blanking aperture array device, 28 electron beam shielding member, 34 third multi-axis electron lens, 36 .. Fourth multi-axis electron lens, 38 .. sub-deflection unit, 40 .. first coil, 42 .. main deflection unit, 44 .. wafer, 46 .. wafer stage, 48 .. wafer stage drive unit, 50 second coil, 52 coaxial lens, 80 electron beam control unit, 82 multi-axis electron lens control unit, 84 molding deflection control unit, 86 blanking aperture array control unit, 90 ..Coaxial lens control unit, 92. Unit, 94 main deflection control unit, 96 wafer stage control unit, 100 electron beam exposure apparatus, 102 grid, 104 electron gun, 106 base material 110 electron beam forming means .. 112 irradiation switching means, 114 wafer projection system, 120 individual control unit, 130 general control unit, 140 control unit, 150 exposure unit, 160 aperture unit, 200 unit Opening, 202, substrate, 204, deflection electrode, 206, electrode extension, 208, ground layer, 210, 212, 214 insulating layer, 216 wiring layer, 218 connection layer, 220 , 222, 224, 230, 234, 240, 242, resist, 226, 232, conductive film, 238, sacrificial layer, 248, wax

Claims (8)

A deflector for deflecting a charged particle beam,
A substrate provided with an opening through which the charged particle beam passes,
A deflection electrode provided on a side surface in the opening to deflect the charged particle beam,
A conductive electrode extension extending from the deflection electrode and extending outward from the opening. The deflector further includes a ground layer provided on an upper surface and / or a lower surface of the deflector with respect to a traveling direction of the charged particle beam, and the electrode extension portion is provided so as to cover an upper end of the ground layer. The deflector according to claim 1, wherein the deflector is provided. An insulating layer is exposed between the ground layer and the electrode extension,
The electrode extension is provided so as to cover above the exposed insulating layer and above the end of the ground layer to prevent the charged particle beam from being irradiated to the exposed insulating layer. The deflector according to claim 2, wherein: The deflection electrode and the electrode extension are conductors mainly made of gold,
The deflector is between the deflection electrode and the electrode extension,
A titanium layer in contact with the deflection electrode,
The deflector according to claim 1, further comprising a platinum layer in contact with the electrode extension. A deflector for deflecting a charged particle beam,
A substrate provided with an opening through which the charged particle beam passes,
A deflection electrode provided on a side surface in the opening to deflect the charged particle beam,
A ground layer provided on an upper surface and / or a lower surface of the deflector with respect to a traveling direction of the charged particle beam;
An insulating layer exposed between the deflection electrode and the ground layer,
In order to prevent the charged particle beam from being irradiated on the exposed insulating layer, the charged particle beam is extended inward from the ground layer toward the opening, and covers the exposed insulating layer and the deflection electrode. And a conductive ground extension provided in the deflector. A method for manufacturing a deflector, comprising: a substrate provided with an opening through which a charged particle beam passes, and a deflection electrode provided on a side surface in the opening to deflect the charged particle beam,
Forming the deflection electrode;
An extension forming step of forming a conductive electrode extension extending from the deflection electrode and extending outward from the opening;
Forming the opening. The step of forming the extension portion includes:
Forming a ground layer on the upper surface and / or lower surface of the deflector with respect to the traveling direction of the charged particle beam;
Forming a sacrificial layer covering at least a part of the insulating layer exposed between the ground layer and the electrode extension and an end of the ground layer;
Forming the electrode extension so as to cover the exposed upper surface of the insulating layer and the end of the ground layer on the upper surface of the sacrificial layer;
7. The method according to claim 6, further comprising removing the sacrificial layer. A charged particle beam exposure apparatus comprising a deflector for deflecting a charged particle beam, and exposing a wafer with the charged particle beam,
The deflector is
A substrate provided with an opening through which the charged particle beam passes,
A deflection electrode provided on a side surface in the opening to deflect the charged particle beam,
A charged particle beam exposure apparatus, comprising: a conductive electrode extension extending from the deflection electrode and extending outward from the opening.

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