JP2007123599A - Charged particle beam lens array and charged particle beam exposure device using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To realize at high level various qualifications such as miniaturization and higher precision. <P>SOLUTION: In a charged particle beam lens array constituted by arranging a plurality of charged particle lenses two-dimensionally, when the same voltage is supplied to all lenses, the power of each lens is set so as to be divided into at least two kinds. When the lens consists of apertures formed in a substrate, the diameter of the apertures is set so as to be more than two kinds. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a charged particle beam exposure apparatus such as an electron beam exposure apparatus or an ion beam exposure apparatus mainly used for exposure of a semiconductor device or the like, and a charged particle beam lens array used therefor. The present invention is particularly suitable for application to a charged particle beam exposure apparatus that performs pattern drawing using a plurality of charged particle beams.

  In the production of micro devices such as semiconductor devices, there has been proposed a multi-charged particle beam exposure system that simultaneously draws a pattern with a plurality of charged particle beams without using a mask. In a multi charged particle beam exposure apparatus using this system, the number of charged particle beams is determined by the number of arrays of multi charged particle beam lenses, and the number of lenses is a major factor in determining throughput. For this reason, how to improve lens performance while miniaturizing and increasing the density of the lens is one of the important factors in improving the performance of the multi-charged beam exposure apparatus.

Electron lenses, which are one type of charged particle beam lens, include an electromagnetic type and an electrostatic type. Compared to the magnetic field type, the electrostatic type does not need to be provided with a coil core or the like and is easy to configure, so it can be said that the electrostatic type is advantageous for downsizing. Here, the main prior art regarding the electrostatic electron lens (electrostatic lens) is shown below.
Non-Patent Document 1 discloses a configuration in which an Einzel lens array is formed by three electrodes having a lens aperture array. In the electrostatic lens configured as described above, generally, a lens action can be obtained by applying a voltage to the center electrode of the three electrodes and grounding the other two.
Sasaki (J. Vac. Sci. Technol., 19 (4), p963, (1981)

In the conventional lens array, the voltage applied to each lens is constant, and the diameter of the plurality of apertures and the distance between the electrodes are the same, so the lens action (lens power) is constant in each lens.
In order to make the lens action of each lens array different, a method of applying different voltages to each lens can be considered. However, in this case, the lens array needs to have an insulating structure between the lenses and a structure in which a voltage is individually applied to each lens, so that the lens array structure may be complicated.
The present invention starts from recognizing the above-mentioned problems of the prior art, and its improvement is the main problem. One of the specific problems is to provide a charged particle beam lens array that realizes various conditions such as miniaturization and high accuracy at a high level. Another object is to provide a highly accurate charged particle beam exposure apparatus using the same.

  In order to solve the above problems, the charged particle beam lens array of the present invention is formed by two-dimensionally arranging a plurality of charged particle beam lenses. The power of each lens when the same voltage is supplied to all the lenses is set to be divided into at least two types.

  A charged particle beam lens array according to a preferred embodiment of the present invention includes a substrate on which a plurality of lens apertures for passing a charged particle beam are formed, and the dimensions of these lens apertures are divided into at least two types. Is set. The charged particle beam lens array is arranged in series with the reduction electron optical system, and the size of each lens aperture is set in accordance with the optical aberration generated in the reduction electron optical system. Further, this charged particle beam lens array is composed of a plurality of substrates in which lens apertures are formed coaxially with each other, at least one of which has the lens aperture size divided into two or more types. It is a substrate.

  The charged particle beam exposure apparatus of the present invention includes a charged particle source that emits a plurality of charged particle beams, and a correction electron optical system that includes a charged particle beam lens array that forms a plurality of intermediate images of the charged particle source. A reduction electron optical system for reducing and projecting the plurality of intermediate images onto the exposure surface; and a deflector for deflecting the plurality of intermediate images projected on the exposure surface so as to move on the exposure surface. . The charged particle beam lens array of the present invention is used as the charged particle beam lens array.

  According to the present invention, since each lens has a different lens action in the charged particle beam lens array, it is possible to provide a charged particle beam lens array that realizes various conditions such as downsizing and higher performance at a high level. And a highly accurate charged particle beam exposure apparatus using this can be provided.

The embodiments of the present invention are listed below.
[Embodiment 1] (Application of the same voltage)
A charged particle beam lens array having a plurality of apertures formed in a substrate and having a different lens power in a charged particle beam lens array supplied with the same voltage.
[Embodiment 2] (Aperture diameter is different)
The charged particle beam lens array in which a plurality of apertures are formed in a substrate, wherein a diameter of at least one of the plurality of apertures is not the same as a diameter of other apertures. Charged particle beam lens array.
[Embodiment 3] (Multiple sheets)
The charged particle beam lens array according to Embodiment 2, wherein the charged particle beam lens array includes a plurality of the substrates.
[Embodiment 4] (Relationship between aperture diameter and aberration)
The charged particle beam lens array according to Embodiment 3, wherein the diameters of the plurality of apertures are set according to optical aberrations generated in the reduction electron optical system.
[Embodiment 5] (Exposure apparatus)
A charged particle source that emits a plurality of charged particle beams, and a correction electron optical system that includes the charged particle beam lens array according to any one of embodiments 1 to 4 that forms a plurality of intermediate images of the charged particle source. . And a reduction electron optical system for reducing and projecting the plurality of intermediate images onto the exposure surface, and a deflector for deflecting the plurality of intermediate images projected onto the exposure surface so as to move on the exposure surface. A charged particle beam exposure apparatus.

Hereinafter, an electron beam lens array as a preferred embodiment of the present invention will be described with reference to the accompanying drawings. However, this electron beam lens array is only one application example of the present invention, and the present invention can also be applied as a charged particle beam other than an electron beam, for example, an ion beam lens array.
[First Embodiment of Electron Beam Lens Array]
FIG. 1 is a diagram for explaining the structure of an electron beam lens array according to the first embodiment of the present invention. 1A is a top view, and FIG. 1B is a cross-sectional view of the electron beam lens array 200 taken along the line MM ′. In FIG. 1, a charged particle beam lens array 200 includes three electrodes, an upper electrode 201, an intermediate electrode 202, and a lower electrode 203, and the three electrodes are electrically insulated from each other. The thickness of the three electrodes 201, 202, and 203 is 100 μm, and the distance between the electrodes is 10 μm.

  In the upper electrode 201, 6 × 6 apertures 204 are formed in an array. In the opening 204, the diameter of the center four openings 204A is 10 μm, the diameter of the outer periphery opening 204B one outer side from the center four openings 204A is 50 μm, and the diameter of the outermost periphery opening 204C is 100 μm. The intermediate electrode 202 has a 6 × 6 opening 205 formed at the same position as the upper electrode 201, and the opening 205 has the same dimensions as the upper electrode. The lower electrode 203 has a 6 × 6 opening 206 formed at the same position as the upper electrode 201, and the opening 206 has the same dimensions as the upper electrode. Here, the openings 204, 205, and 206 of each of the three electrodes have a coaxial positional relationship.

  The operation of the electron beam lens array 200 will be described. In the electron beam lens array 200, an electron beam having an acceleration voltage of 5 kV is passed through all the apertures of 6 × 6. At this time, a potential of 0 V is applied to the upper electrode 201 and the lower electrode 203, and, for example, −100 V is applied to the intermediate electrode as a potential. As a result, the focal lengths of the lenses including the apertures 204A, 204B, and 204C are as shown in Table 1. That is, the electron beam lens array 200 has a distribution in which the focal length becomes longer toward the outer periphery.

  In the present embodiment, the dimensions of the aperture, the electrode thickness, and the distance between the electrodes are shown as examples. However, by changing these dimensions, the distribution of the desired focal length in the electron beam lens array 200 is shown. Can be obtained.

[Second Embodiment of Electron Beam Lens Array]
FIG. 2 is a diagram for explaining the structure of an electron beam lens array according to the second embodiment of the present invention. 2A and 2B are top views, and FIG. 2C is a cross-sectional view taken along the line MM ′ of the electron beam lens array 300. In FIG. 2, an electron beam lens array 300 includes three electrodes, an upper electrode 301, an intermediate electrode 302, and a lower electrode 303, and the three electrodes are electrically insulated from each other. The thicknesses of the three electrodes 301, 302, and 303 are each 100 μm, and the distance between each electrode is 10 μm.

  In the upper electrode 301, 6 × 6 apertures 304 are formed in an array, and the diameters of the apertures 304 are all 50 μm. In the intermediate electrode 302, a 6 × 6 opening 305 is formed at the same position as the upper electrode 301. In the intermediate electrode 302, 6 × 6 apertures 305 are formed in an array. In the opening 305, the diameter of the central four openings 305A is 200 μm, the diameter of the outer peripheral opening 305B is 100 μm, and the diameter of the outermost peripheral opening 305C is 10 μm. The lower electrode 303 is formed with 6 × 6 apertures 306 at the same position as the upper electrode 301. The apertures 306 are all the same size as the upper electrode and are 50 μm. Here, the openings 304, 305, and 306 of each of the three electrodes are in a coaxial positional relationship.

  The operation of the electron beam lens array 300 will be described. In the electron beam lens array 300, an electron beam having an acceleration voltage of 5 kV is passed through all 6 × 6 apertures. At this time, a potential of 0 V is applied to the upper electrode 301 and the lower electrode 303, and, for example, −100 V is applied as a potential to the intermediate electrode. As a result, the focal lengths of the lenses including the apertures 305A, 305B, and 305C are as shown in Table 2. In other words, the electron beam lens array 300 has a distribution in which the focal length becomes shorter toward the outer periphery.

  In the present embodiment, the dimensions of the aperture, the electrode thickness, and the distance between the electrodes are shown as examples. However, by changing these dimensions, the desired focal length distribution in the electron beam lens array 300 can be obtained. Can be obtained.

[Third embodiment of electron beam lens array]
FIG. 3 is a diagram for explaining the structure of an electron beam lens array according to the third embodiment of the present invention. 3A and 3B are top views, and FIG. 3C is a cross-sectional view of the electron beam lens array 400 taken along the line MM ′. In FIG. 3, an electron beam lens array 400 includes three electrodes, an upper electrode 401, an intermediate electrode 402, and a lower electrode 403, and the three electrodes are electrically insulated from each other. The thicknesses of the three electrodes 401, 402, and 403 are each 100 μm, and the distance between the electrodes is 10 μm.

  In the upper electrode 401, 6 × 6 apertures 404 are formed in an array. In the aperture 404, the diameter of the central four apertures 404A is 10 μm, the diameter of the outer peripheral aperture 305B just outside the central four apertures 404B is 100 μm, and the diameter of the outermost peripheral aperture 404C is 200 μm. In the intermediate electrode 402, 6 × 6 apertures 405 are formed in an array at the same position as the upper electrode 401, and all the apertures 405 have a diameter of 50 μm. The lower electrode 403 has a 6 × 6 aperture 406 formed at the same position as the upper electrode 401, and the size of the aperture 406 is the same as the aperture 404 of the upper electrode. Here, the openings 404, 405, and 406 of each of the three electrodes are in a coaxial positional relationship.

  The operation of the electron beam lens array 400 will be described. In the electron beam lens array 400, an electron beam having an acceleration voltage of 5 kV is passed through all 6 × 6 apertures. At this time, a potential of 0 V is applied to the upper electrode 401 and the lower electrode 403, and, for example, −100 V is applied to the intermediate electrode as a potential. As a result, the focal lengths of the lenses including the apertures 401A, 401B, and 401C are as shown in Table 3. That is, the electron beam lens array 400 has a distribution in which the focal length becomes longer toward the outer periphery.

  In the present embodiment, the dimensions of the aperture, the electrode thickness, and the distance between the electrodes are shown as examples. However, by changing these dimensions, the desired focal length distribution in the electron beam lens array 400 can be obtained. Can be obtained.

[Example of electron beam exposure apparatus]
Hereinafter, an electron beam exposure apparatus as a preferred embodiment of the present invention will be described with reference to the accompanying drawings. This electron beam exposure apparatus is only one application example of the present invention, and the present invention can also be applied to an exposure apparatus using a charged particle beam other than an electron beam, for example, an ion beam.
FIG. 4 is a schematic diagram of a main part of the electron beam exposure apparatus according to the present embodiment. In FIG. 4, 1 is an electron gun 1 composed of a cathode 1a, a grid 1b, and an anode 1c. The electrons emitted from the cathode 1a form a crossover image between the grid 1b and the anode 1c. Hereinafter, this crossover image is referred to as an electron source. The electrons emitted from the electron gun 1 become a substantially parallel electron beam by the condenser lens 2 whose front focal position is at the electron source position.

  The condenser lens 2 of the present embodiment is a unipotential lens composed of three aperture electrodes. The substantially parallel electron beam obtained by the condenser lens 2 enters the correction electron optical system 3. The correction optical system 3 includes an aperture array, a blanker array, a multi charged particle beam lens, an element electron optical system array unit, and a stopper array. Details of the correction electron optical system 3 will be described later.

  The correction electron optical system 3 forms a plurality of intermediate images of the light source, and each intermediate image is reduced and projected by a reduction electron optical system 4 described later to form a light source image on the wafer 5. At this time, the correction electron optical system 3 forms a plurality of intermediate images so that the interval between the light source images on the wafer 5 is an integral multiple of the size of the light source image. Further, the correction electron optical system 3 varies the position of each intermediate image in the optical axis direction according to the field curvature of the reduction electron optical system 4, and each intermediate image is reduced and projected onto the wafer 5 by the reduction electron optical system 4. Aberrations that occur during the correction are corrected in advance.

  The reduction electron optical system 4 includes two sets of symmetric magnetic doublets, and each symmetric magnetic doublet lens includes a first projection lens 41 (43) and a second projection lens 42 (44). When the focal length of the first projection lens 41 (43) is f1, and the focal length of the second projection lens 42 (44) is f2, the distance between the two lenses is f1 + f2. The object point on the optical axis AX is at the focal position of the first projection lens 41 (43), and the image point is connected to the focal point of the second projection lens 42 (44). This image is reduced to -f2 / f1. The two lens magnetic fields are determined so as to act in opposite directions. Therefore, theoretically, other Seidel aberrations and chromatic aberrations relating to rotation and magnification are canceled out except for five aberrations of spherical aberration, isotropic astigmatism, isotropic coma aberration, field curvature aberration, and axial chromatic aberration.

A deflector 6 deflects a plurality of electron beams from the correction electron optical system 3 and displaces a plurality of light source images on the wafer 5 by substantially the same amount of displacement in the x and y directions. Although not shown, the deflector 6 includes a main deflector used when the deflection width is wide and a sub-deflector used when the deflection width is narrow. The main deflector is an electromagnetic deflector, and the sub deflector is an electrostatic deflector.
Reference numeral 7 denotes a dynamic focus coil, which corrects the focus position shift of the light source image due to deflection aberration generated when the deflector 6 is operated. Reference numeral 8 denotes a dynamic stig coil which, like the dynamic focus coil 7, corrects astigmatism of deflection aberration caused by deflection.

  Reference numeral 9 denotes a θ-Z stage on which a wafer is placed and can move in the optical axis AX (z-axis) direction and the rotational direction around the z-axis. A stage reference plate 10 and a Faraday cup 13 are fixed to the θ-Z stage 9. The Faraday cup 13 detects the charge amount of the light source image formed by the electron beam from the correction electron optical system 3. Reference numeral 11 denotes an XY stage, which is a stage on which the θ-Z stage 9 is mounted and is movable in the XY direction orthogonal to the optical axis AX (z axis). A reflected electron detector 12 detects reflected electrons generated when the mark on the stage reference plate 10 is irradiated with an electron beam.

Next, the correction electron optical system 3 will be described with reference to FIG. 5A is a view of the correction electron optical system 3 as viewed from the electron gun 1 side, and FIG. 5B is a cross-sectional view taken along the line AA ′ of FIG.
As described above, the correction electron optical system 3 includes the aperture array AA, the blanker array BA, the multi-charged particle beam lens ML, the element electron optical system array unit LAU (LA1, LA2), and the stopper array SA. These optical elements are arranged in order from the electron gun 1 side along the optical axis AX.

  The aperture array AA has a plurality of openings formed in a substrate, and divides a substantially parallel electron beam from the condenser lens 2 into a plurality of electron beams. The blanker array BA is formed by forming a plurality of deflecting means for individually deflecting a plurality of electron beams divided by the aperture array AA on a single substrate. Details of one of the deflecting means are shown in FIG. In FIG. 6, the substrate 31 has an opening AP. Reference numeral 32 denotes a blanking electrode having a deflection function, which is composed of a pair of electrodes sandwiching the opening AP. In addition, wiring (W) for individually turning on / off the blanking electrode 32 is formed on the substrate 31.

Returning to FIG. 5, the multi-charged particle beam lens ML is used in the correction electron optical system 3 to increase the charged particle beam convergence effect.
The element electron optical system array unit LAU is composed of a first electron optical system array LA1 and a second electron optical system array LA2, which are electron lens arrays formed by two-dimensionally arranging a plurality of electron lenses in the same plane. The The charged particle beam lens array according to the present invention is used as at least one of the first electron optical system array LA1 and the second electron optical system array LA2.

  FIG. 7 is a diagram illustrating the first electron optical system array LA1. The first electron lens array LA1 is a multi-electrostatic lens composed of three pieces of an upper electrode UE, an intermediate electrode CE, and a lower electrode LE in which a plurality of openings are arranged. The upper, middle, and lower electrodes arranged in the direction of the optical axis AX constitute one electron lens EL1, that is, a so-called unipotential lens. All the upper and lower electrodes of each electron optical system are connected at the same potential and set to the same potential (in this embodiment, the acceleration potential of the electron beam is set). Then, a voltage is applied to the intermediate electrode of each electron lens. The aperture diameter of each lens is individually set to a desired value. Thereby, the electro-optical power (focal length) of each electron lens can be set to a desired value. The second electron optical system array LA1 also has the same structure and function as the first electron optical system array LA1.

Next, the action that the electron beam receives by the correction electron optical system 3 described above will be described with reference to FIG.
The electron beams EB1 and EB2 divided by the aperture array AA enter the element electron optical system array unit LAU via different blanking electrodes. The electron beam EB1 forms an intermediate image img1 of the electron source via the electron lens EL11 of the first electron optical system array LA1 and the electron lens EL21 of the second electron optical system array LA2. On the other hand, the electron beam EB2 forms an intermediate image img2 of the electron source via the electron lens EL12 of the first electron lens array LA1 and the electron lens EL22 of the second electron lens array LA2.
At this time, as described above, the electron lenses of the first electron optical system lens array LA1 are set to have different focal lengths. The electron lenses of the second electron optical system lens array LA2 are also set to have different focal lengths.

Further, the focal length of each electron lens is set so that the combined focal length of the electron lenses EL11 and EL21 through which the electron beam EB1 passes and the combined focal length of the electron lenses EL12 and EL22 through which the electron beam EB2 passes are substantially equal. ing. Thereby, the intermediate images img1 and img2 of the electron source are formed at substantially the same magnification. Further, in order to correct the field curvature that occurs when each intermediate image is reduced and projected onto the wafer 5 via the reduction electron optical system 4, the intermediate images img1 and img2 of the electron source according to the field curvature. Are formed in different positions in the optical axis AX direction.
Further, when an electric field is applied to the passing blanking electrode, the trajectories of the electron beams EB1 and EB2 change as indicated by broken lines in the figure. In this case, the electron beams EB1 and EB2 cannot be passed through the openings corresponding to the electron beams of the stopper array SA and are blocked.

(Description of system configuration)
FIG. 9 shows the system configuration of the electron beam exposure apparatus of this embodiment. In the figure, a BA control circuit 111 is a control circuit that individually controls on / off of blanking electrodes of the blanker array BA. The LAU control circuit 112 is a control circuit for the lens array unit LAU. The D_STIG control circuit 113 is a control circuit that controls the astigmatism of the reduction electron optical system 4 by controlling the dynamic stig coil 8. The D_FOCUS control circuit 114 is a control circuit that controls the focus of the reduction electron optical system 4 by controlling the dynamic focus coil 7. The deflection control circuit 115 is a control circuit that controls the deflector 6. The optical characteristic control circuit 116 is a control circuit that adjusts optical characteristics (magnification, distortion, rotational aberration, optical axis, etc.) of the reduction electron optical system 4. The stage drive control circuit 118 is a control circuit that drives and controls the XY stage 11 in cooperation with the laser interferometer LIM that drives and controls the θ-Z stage 9 and detects the position of the XY stage 11. The control system 120 controls each control circuit described above based on data from the memory 121 in which the drawing pattern is stored. The control system 120 is controlled by a CPU 123 that controls the entire electron beam exposure apparatus via an interface 122.

(Explanation of exposure operation)
Next, with reference to FIG. 9, the exposure operation of the above-described electron beam exposure apparatus of the present embodiment will be described.
The control system 120 commands the deflection control circuit 115 based on the exposure control data from the memory 121 and causes the deflector 6 to deflect a plurality of electron beams. In addition, the BA control circuit 111 is instructed to individually turn on / off the blanking electrodes of the blanker array BA according to the pattern to be exposed on the wafer 5. At this time, the XY stage 11 continuously moves in the y direction, and the deflector 6 deflects the plurality of electron beams so that the plurality of electron beams follow the movement of the XY stage.

Each electron beam scans and exposes a corresponding element exposure region (EF) on the wafer 5 as shown in FIG. Since the element exposure areas (EF) of each electron beam are set so as to be adjacent in two dimensions, as a result, a subfield (SF) composed of a plurality of element exposure areas (EF) exposed simultaneously is formed. Exposed.
The control system 120 in FIG. 9 instructs the deflection control circuit 115 to perform the next operation in order to expose the next subfield (SF2) after exposing the subfield (SF1). That is, the deflector 6 deflects a plurality of electron beams in a direction (x direction) orthogonal to the stage scanning direction (y direction). At this time, the aberration when each electron beam is reduced and projected via the reduction electron optical system 4 also changes due to the change of the subfield due to the deflection.

  Therefore, the control system 120 commands the LAU control circuit 112, the D_STIG control circuit 113, and the D_FOCUS control circuit 114 to perform the next operation. That is, the lens array unit LAU, the dynamic stig coil 8, and the dynamic focus coil 7 are adjusted so as to correct the changed aberration. Then, as described above, the subfield (SF2) is exposed by exposing the element exposure region (EF) to which each electron beam corresponds. Then, as shown in FIG. 10, the subfields (SF1 to SF6) are sequentially exposed to expose a pattern on the wafer 5. As a result, on the wafer 5, a main field (MF) composed of subfields (SF1 to SF6) arranged in a direction (x direction) perpendicular to the stage scanning direction (y direction) is exposed.

  Further, the control system 120 instructs the deflection control circuit 115 to perform the next operation after exposing the main field 1 (MF1) shown in FIG. That is, a plurality of electron beams are sequentially deflected and exposed to main fields (MF2, MF3, MF4...) Arranged in the stage scanning direction (y direction). As a result, as shown in FIG. 10, a stripe (STRIPE1) composed of main fields (MF2, MF3, MF4...) Is exposed. Then, the XY stage 11 is stepped in the x direction to expose the next stripe (STRIPE2).

[Example of micro device manufacturing]
Next, a manufacturing process of a micro device (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.) using this exposure apparatus will be described.
FIG. 11 shows a flow of manufacturing a semiconductor device.
In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (EB data conversion), exposure control data for the exposure apparatus is created based on the designed circuit pattern.
On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the wafer and the exposure apparatus to which the prepared exposure control data is input.
The next step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer manufactured in step 4. The post-process includes assembly processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. A semiconductor device is completed through these processes, and is shipped in Step 7.

  The wafer process in step 4 includes an oxidation step for oxidizing the surface of the wafer, a CVD step for forming an insulating film on the wafer surface, and an electrode formation step for forming electrodes on the wafer by vapor deposition. Also, an ion implantation step for implanting ions into the wafer, a resist processing step for applying a photosensitive agent to the wafer, and an exposure step for printing and exposing the circuit pattern on the wafer after the resist processing step by the exposure apparatus described above. Further, there are a development step for developing the wafer exposed in the exposure step, an etching step for removing portions other than the resist image developed in the development step, and a resist stripping step for removing the resist that has become unnecessary after the etching. By repeating these steps, multiple circuit patterns are formed on the wafer.

It is a figure explaining the electron beam lens array which concerns on the 1st Example of this invention. It is a figure explaining the electron beam lens array which concerns on the 2nd Example of this invention. It is a figure explaining the electron beam lens array which concerns on the 3rd Example of this invention. It is a figure which shows the principal part outline of the electron beam exposure apparatus which concerns on one Example of this invention. It is a figure explaining the correction | amendment electron optical system in the apparatus of FIG. It is a figure explaining the deflection | deviation means of the blanker array BA in the apparatus of FIG. It is a figure explaining 1st electron optical system array LA1 in the apparatus of FIG. It is a figure explaining the effect | action which the electron beam in the apparatus of FIG. 4 receives by the correction | amendment electron optical system. It is a figure explaining the structure of the control system in the apparatus of FIG. It is a figure explaining the exposure area | region in the apparatus of FIG. It is a figure explaining the flow of the manufacturing process of a device.

Explanation of symbols

AA: Aperture array BA: Blanker array ML: Multi-charged beam lens LAU: Element electron optical system unit LA1, LA2: Electron optical system array SA: Stopper array UE: Upper electrode CE: Intermediate electrode LE: Lower electrode EL: Electron lens LIM : Laser interferometer AP: Opening W: Wiring 1: Electron gun 2: Condenser lens 3: Correction electron optical system 4: Reduction electron optical system 5: Wafer 6: Deflector 7: Dynamic focus coil 8: Dynamic stig coil 9: θ-Z stage 10: stage reference plate 11: XY stage 12: backscattered electron detector 13: Faraday cup 21, 22: unipotential lens 31: substrate 32: blanking electrode 41, 43: first projection lens 42, 44: Second projection lens 111: BA control circuit 112: LA U control circuit 113: D_STIG control circuit 114: D_FOCUS control circuit 115: Deflection control circuit 116: Optical characteristic control circuit 120: Control system 122: Interface 123: CPU
200, 300, 400: Electron lens array 201, 301, 401: Upper electrode 202, 302, 402: Intermediate electrode 203, 303, 403: Lower electrode 204, 205, 206, 304, 305, 306, 404, 405, 406 : Open hole

Claims (6)

A charged particle beam lens array formed by two-dimensionally arranging a plurality of charged particle beam lenses,
A charged particle beam lens array, wherein the power of each lens when the same voltage is supplied to all the lenses is set to be divided into at least two types.   2. The substrate according to claim 1, further comprising a substrate on which a plurality of lens apertures for passing a charged particle beam are formed, wherein the dimensions of the lens apertures are set in at least two types. Charged particle beam lens array.   3. The charged particle beam according to claim 2, wherein the charged particle beam is arranged in series with a reduction electron optical system, and the size of each lens aperture is set in accordance with an optical aberration generated in the reduction electron optical system. Lens array.   The charged particle beam lens array includes a plurality of substrates having lens apertures formed coaxially with each other, at least one of which is the substrate according to claim 2 or 3. Line lens array. A charged particle source that emits a plurality of charged particle beams; and
A correction electron optical system including a charged particle beam lens array that forms a plurality of intermediate images of the charged particle source;
A reduction electron optical system for reducing and projecting the plurality of intermediate images onto an exposed surface;
A deflector for deflecting the plurality of intermediate images projected on the exposed surface so as to move on the exposed surface;
In a charged particle beam exposure apparatus having
A charged particle beam exposure apparatus using the charged particle beam lens array according to any one of claims 1 to 4 as the charged particle beam lens array.   6. A device manufacturing method comprising: exposing a substrate using the exposure apparatus according to claim 5; and developing the exposed substrate.

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