JP4252813B2 - Charged beam lens, charged beam exposure apparatus and device manufacturing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
  The present inventionloadElectric beamforThe present invention relates to a lens, a charged beam exposure apparatus, and a device manufacturing method.
[0002]
[Prior art]
In the production of semiconductor devices, the electron beam exposure technique has been spotlighted as a promising candidate for lithography that enables fine pattern exposure of 0.1 μm or less, and there are several methods. For example, there is a variable rectangular beam method that draws a pattern by so-called one-stroke drawing. However, this method has a low throughput and has many problems as a mass production exposure apparatus. As a means for improving the throughput, a figure batch exposure method for reducing and transferring a pattern formed on a stencil mask has been proposed. This method is advantageous for simple patterns with many repetitions, but random patterns such as a logic wiring layer have many problems in terms of throughput, and greatly impede productivity improvement in practical use.
[0003]
In contrast, a multi-beam system that simultaneously draws a pattern with multiple electron beams without using a mask has been proposed, which eliminates the need for physical mask fabrication and replacement, and has many advantages for practical use. I have. The number of electron lenses arranged in an array is important in making the electron beam multi-functional. That is, since the number of electron beams is determined by the number of electron lenses, the number of electron lenses is a major factor in determining throughput. Therefore, how to improve the lens performance while miniaturizing and increasing the density of the lens is one of the important factors in improving the performance of the multi-beam type exposure apparatus.
[0004]
Electron lenses include electromagnetic and electrostatic types. Compared to the magnetic field type, the electrostatic type does not need to be provided with a coil core or the like and is easy to configure, so it can be said that the electrostatic type is advantageous for downsizing. Here, the main prior art regarding the electrostatic electron lens (electrostatic lens) is shown below.
[0005]
AD Feinerman et al. (J. Vac. Sci. Technol. A 10 (4), p611, 1992) anodic-bonded V-grooves and fibers made by microcrystalline mechanical etching of Si-crystal anisotropic etching. By doing so, it is disclosed to form a three-dimensional structure composed of three electrodes which are electrostatic single lenses. Si is provided with a membrane frame, a membrane, and an opening through which the electron beam passes. In addition, KY Lee et al. (J. Vac. Sci. Technol. B12 (6), p3425, 1994) describe a structure in which a plurality of Si and Pyrex (registered trademark) glass are laminated and joined using an anodic bonding method. An aligned electron lens for a microcolumn is manufactured. Sasaki (J. Vac. Sci. Technol. 19, 963 (1981)) discloses a configuration in which an Einzel lens array is formed by three electrodes having a lens aperture array. In the electrostatic lens configured as described above, generally, a lens action can be obtained by applying a voltage to the center electrode of the three electrodes and grounding the other two.
[0006]
[Problems to be solved by the invention]
However, when an electron lens is configured by combining electrodes in the above-described conventional example, the Feinerman method and the Lee method require a new anodic bonding device in addition to the process device for electrode preparation. In Sasaki's method, the details of how to construct an electron lens by combining electrodes are not clear.
[0007]
Further, in the case where the miniaturization is advanced by bonding the electrodes, as shown in FIG. 16, when the electrodes 1 are fixed to each other with the adhesive 2 with the insulator 5 interposed therebetween, generally the insulation of the adhesive 2 is more than that of the insulator 5. Since the withstand voltage is low, there is a possibility that dielectric breakdown may occur in the adhesive 2, and this may cause a decrease in the operating voltage of the electrostatic lens.
[0008]
The present invention has been made in view of the above background. For example, an object of the present invention is to solve the problem of dielectric breakdown in a member for assembling a plurality of electrode substrates.
[0009]
[Means for Solving the Problems]
  A first aspect of the present invention relates to a charged beam lens, wherein the charged beam lens includes at least three electrode substrates each having a plurality of openings through which the charged beam passes, and the at least three electrode substrates. An insulator is disposed between each of the at least two electrode substrates, and a common potential is applied to at least two electrode substrates including the electrode substrates at both ends of the at least three electrode substrates. A potential different from the common potential is applied to at least one electrode substrate. The charged beam lens has a connecting portion including at least an adhesive for connecting outer peripheral portions of the at least two electrode substrates, and the outer peripheral end of the at least one electrode substrate does not contact the connecting portion. Have shape or dimensions.
  A second aspect of the present invention relates to a charged beam exposure apparatus, and the charged beam exposure apparatus has the charged beam lens described above, and draws a pattern on a substrate by the charged beam from the charged beam lens.
  A third aspect of the present invention relates to a device manufacturing method, which includes a step of drawing a pattern on a substrate using the above-described charged beam exposure apparatus, and developing the substrate on which the pattern is drawn in the step The process of carrying out.
  Of a preferred embodiment of the present invention.The multi-charged beam lens includes at least three electrode substrates each having a plurality of openings through which a charged beam passes, and at least two electrode substrates to which a common potential (for example, ground potential) is applied among the at least three electrode substrates. And a connecting portion that connects the two. Here, the connecting portion may be disposed so as not to contact an electrode substrate to which a potential (for example, a negative potential) different from the common potential is applied among the at least three electrode substrates. According to such a configuration, an advantageous effect that dielectric breakdown does not occur via the connecting portion can be obtained.
[0010]
According to a preferred embodiment of the present invention, the connecting portion may include an adhesive, and bonds the solid member to the solid member and the at least two electrode substrates to which the common potential is applied. An adhesive may be included. The former is particularly useful when, for example, the distance between electrode substrates to be connected is small, and the latter is particularly useful when the distance between electrode substrates to be connected is large.
[0011]
According to a preferred embodiment of the present invention, the multi-charged beam lens further comprises an insulator disposed between the at least three electrode substrates so as to position the at least three electrode substrates relative to each other. It is preferable to provide. In this case, it is preferable that the at least three electrode substrates have a positioning groove, and the insulator is disposed in the groove. According to such a configuration, for example, the at least three electrode substrates can be assembled by the connecting portion and the insulator, which facilitates assembly work.
[0012]
According to a preferred embodiment of the present invention, it is preferable that the connecting portion is made of a conductive material. In this case, for example, a common potential can be applied to the at least two electrode substrates by connecting a conducting wire to one of the at least two electrode substrates coupled by the coupling portion.
[0013]
  Of the present inventionOf the preferred embodimentA charged beam exposure apparatus includes the above-described multi-charged beam lens, and is configured to draw a pattern on a substrate by a charged beam from the multi-charged beam lens. Such a charged beam exposure apparatus has high reliability because the insulation performance of the multi charged beam lens is high..
[0014]
A third aspect of the present invention relates to a device manufacturing method, which includes a step of drawing a pattern on a substrate coated with a photosensitive agent by the above charged beam exposure apparatus, and a step of developing the substrate on which the pattern is drawn. Including.
[0015]
DETAILED DESCRIPTION OF THE INVENTION
Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.
[0016]
[First Embodiment]
FIG. 1 is a cross-sectional view schematically showing the structure of a multi-charged beam lens according to the first embodiment of the present invention. The multi-charged beam lens 100 has a structure in which three electrode substrates 1a, 1b, and 1c are arranged with an insulator 5 interposed therebetween. The three electrode substrates 1a, 1b, and 1c are formed with assembly grooves (positioning portions) 4a, 4b, and 4c, respectively, and the insulator 5 is disposed between the grooves 4a, 4b, and 4c. Thus, the three electrode substrates 1a, 1b, and 1c are positioned relative to each other. In this embodiment, the same potential (common potential) is applied to the upper electrode substrate 1a and the lower electrode substrate 1c among the upper electrode substrate 1a, the intermediate electrode substrate 1b, and the lower electrode substrate 1c. The multi-charged beam lens 100 is assembled by connecting the upper electrode substrate 1a and the lower electrode substrate 1c, to which the same potential is applied, by the connecting portion 2.
[0017]
Here, the connection part 2 is arrange | positioned so that it may not contact the intermediate electrode board | substrate 1b. According to such a configuration, since no potential difference is applied to the connecting portion 2, the problem of dielectric breakdown in the member for connecting the electrode substrates is solved. For example, the connecting portion 2 may be configured only by an adhesive, or may be configured by a solid member and an adhesive that bonds the solid member to the upper electrode substrate 1a and the lower electrode substrate 1c. The upper electrode substrate 1a and the lower electrode substrate 1c may be configured by a member that mechanically connects the upper electrode substrate 1a and the lower electrode substrate 1c. However, when the distance between the electrode substrates to be connected is small (for example, small enough to be sufficiently connected by an adhesive), the connecting portion 2 is used in terms of ease of assembly and simplification of the structure. It is preferable that it is composed only of an adhesive.
[0018]
As shown in FIG. 1, the intermediate electrode substrate 1b is typically given a negative potential with respect to the potentials of the upper electrode substrate 1a and the lower electrode substrate 1c.
[0019]
In this embodiment, the multi-charged beam lens 100 is composed of three electrode substrates, but the number of electrode substrates is not limited to three and may be other numbers. In this case, a structure in which the same potential is applied to at least two electrode substrates (that is, the uppermost electrode substrate and the lowermost electrode substrate) at least at both ends in the arrangement of the plurality of electrode substrates is desirable. According to the above, all the electrode substrates can be fixed by disposing the insulator between the electrode substrates and connecting the two electrode substrates at both ends by the connecting portion.
[0020]
Next, a method for manufacturing each of the electrode substrates 1a, 1b, and 1c shown in FIG. 1 will be described with reference to FIG. First, a silicon wafer 6 is prepared in the step shown in FIG. 2A, and in the step shown in FIG. 2B, a resist is applied on the surface of the silicon wafer 6 by spin coating or the like, and then an exposure step and a development step. Then, the resist is patterned to form a mask 7. Next, in the step shown in FIG. 2C, the lens openings 3 (3a, 3b, 3c) are formed in the silicon wafer 6 by dry etching (anisotropic etching) using an etching gas such as SF6 gas as the mask 7. Grooves 4 (4a, 4b, 4c) for assembly are formed, and then the resist 7 is removed. Next, in the step shown in FIG. 2D, by sputtering, at least the inner wall of the lens opening 3 of the silicon wafer 6 and its peripheral portion, preferably the entire surface of the silicon wafer 6 (including the inner wall of the lens opening 3) is made of Au or the like. A conductive material is deposited, thereby forming the conductor film 8.
[0021]
Here, the shape and / or dimensions of the intermediate electrode substrate 1 b, that is, the electrodes other than the electrode substrate connected by the connecting portion 2 are determined so as not to contact the connecting portion 2. Typically, the intermediate electrode 1b can be sized smaller than the upper electrode substrate 1a and the lower electrode substrate 1c so that the outer peripheral end thereof does not contact the connecting portion 2.
[0022]
Next, an assembly process of the electrode substrates 1a, 1b, and 1c manufactured as described above will be described. In the assembly process, the insulators 5 are disposed between the groove 4a of the upper electrode substrate 1a and the groove 4b of the intermediate electrode substrate 1b and between the groove 4b of the intermediate electrode substrate 1b and the groove 4c of the lower electrode substrate 1c. After that, the upper electrode 1a and the lower electrode 1c to which the same potential can be applied are connected by a connecting portion 2 such as an adhesive. By this assembly process, the multi-charged beam lens 100 shown in FIG. 1 is obtained.
[0023]
Note that even when a multi-charged beam lens is configured with three or more electrode substrates, the multi-charged beam lens can be manufactured by applying the same method as described above.
[0024]
In the multi-charged beam lens 100 shown in FIG. 1, the upper electrode substrate 1a and the lower electrode substrate 1c are grounded, and a negative voltage is applied to the intermediate electrode substrate 1b, thereby obtaining a lens effect on a charged beam such as an electron beam. Can do. Here, when the connecting portion 2 is made of a conductive material (for example, a conductive adhesive), the conductive wire only needs to be connected to one of the upper electrode substrate 1a and the lower electrode substrate 1c. It can be simplified.
[0025]
In the schematic cross-sectional view shown in FIG. 1, five electron lenses are shown. However, the number of electron lenses can be arranged in one or two dimensions according to the design specifications. In a typical multi-charged beam lens, several hundred to several thousand electron lenses can be two-dimensionally arranged.
[0026]
Next, an electron beam exposure apparatus (drawing apparatus) according to a preferred embodiment of the present invention will be described as an application example of a multi-charged beam lens that can be manufactured by the above method. Although the following example is an exposure apparatus that employs an electron beam as a charged beam, the present invention can also be applied to an exposure apparatus that uses other types of beams such as an ion beam as a charged beam.
[0027]
FIG. 3 is a diagram showing a schematic configuration of an electron beam exposure apparatus according to a preferred embodiment of the present invention. In FIG. 3, an electron gun 501 as an electron generator includes a cathode 501a, a grid 501b, and an anode 501c, and electrons emitted from the cathode 501a form a crossover image between the grid 501b and the anode 501c. Form. Hereinafter, this crossover image is referred to as an electron source.
[0028]
The electrons emitted from the electron source become one electron beam substantially parallel by the condenser lens 502 arranged so that the front focal position coincides with the electron source position. The condenser lens 2 can be composed of, for example, two electron lenses 521 and 522. The substantially parallel electron beam emitted from the condenser lens 2 is incident on a correction electron optical system array (correction electron optical system) 503.
[0029]
The element electron optical system array 503 includes, as its constituent elements, a multi-charged beam lens that can be manufactured by applying the above manufacturing method. As will be described later, the element electron optical system array 503 includes an aperture array, a blanker array, an element electron optical system array unit, a stopper array, and the like in addition to the multi-charged beam lens simplified in FIG. It can consist of
[0030]
The correction electron optical system array 503 includes a plurality of electron lenses (element electron optical systems) arranged two-dimensionally, thereby forming a plurality of intermediate images of the electron source. Each intermediate image is reduced and projected onto the wafer 505 by a reduction electron optical system 504 described later. Here, the plurality of correction electron optical system arrays 503 are arranged such that the interval between the plurality of electron source images projected on the wafer 505 on the wafer 505 is an integral multiple of the size of the electron source image on the wafer 505. An electronic lens is arranged. Further, the correction electron optical system array 503 forms a plurality of intermediate images at positions where the curvature of field of the reduction electron optical system 504 can be corrected, and the plurality of intermediate images are formed on the wafer 505 by the reduction electron optical system 504. Aberrations that occur when the projection is reduced and are corrected in advance.
[0031]
The reduction electron optical system 504 includes a symmetric magnetic tablet composed of a first projection lens 541 and a second projection lens 542 and a symmetric magnetic tablet composed of a first projection lens 543 and a second projection lens 544. When the focal length of the first projection lens 541 (543) is f1, and the focal length of the second projection lens 542 (544) is f2, the distance between the first projection lens 541 (543) and the second projection lens 542 (544). Is f1 + f2. The object point on the optical axis (electron optical system axis) AX is at the focal position of the first projection lens 541 (543), and the image point is at the focal position of the second projection lens 542 (544). This image is reduced to -f2 / f1. Further, since the lens magnetic fields of the first projection lens 541 (543) and the second projection lens 542 (544) are determined to act in opposite directions, theoretically, spherical aberration, isotropic astigmatism, etc. Except for the five aberrations of isotropic coma, curvature of field, and longitudinal chromatic aberration, other Seidel aberrations and chromatic aberrations relating to rotation and magnification are canceled out.
[0032]
The deflector 506 collectively deflects a plurality of electron beams between the element electron optical system array 503 and the wafer 505, and causes a plurality of electron source images to be displaced in the x and y directions on the wafer 505 with a common displacement amount. A deflector to be displaced. The deflector 506 includes, for example, a main deflector that deflects a plurality of electron beams with a wide deflection width and a sub-deflector that deflects a plurality of electron beams with a narrow deflection width. Typically, the main deflector is an electromagnetic deflector and the sub-deflector is an electrostatic deflector.
[0033]
The dynamic focus coil 507 corrects the shift of the focus position of the electron source image due to the deflection aberration generated when the deflector 506 is operated. Similar to the dynamic focus coil 507, the dynamic stig coil 508 corrects astigmatism of deflection aberration caused by deflection.
[0034]
A wafer (substrate) 505 coated with a photosensitive agent is placed on a θ-Z stage 509. The θ-Z stage 509 can be configured to be able to move the wafer 505 in the optical axis AX (Z-axis) direction and the rotation direction around the Z-axis. A stage reference plate 513 and a Faraday cup 510 can be disposed on the θ-Z stage 509. The θ-Z stage 509 is mounted on the XY stage 511.
[0035]
Next, the correction electron optical system array 503 will be described with reference to FIG. 4A is a correction electron optical system array viewed from the electron gun 1 side, and FIG. 4B is a cross-sectional view taken along line AA ′ in FIG.
[0036]
The correction electron optical system array 503 is arranged in order from the electron gun 1 side along the optical axis AX, and includes an aperture array AA, a blanker array BA, a multi-charged beam lens ML, an element electron optical system array unit LAU, and a stopper array SA. Can be configured.
[0037]
The aperture array AA is a substrate on which a plurality of openings are formed, and divides a substantially parallel electron beam from the condenser lens 502 into a plurality of electron beams. The blanker array BA is a substrate on which a plurality of deflectors that individually deflect a plurality of electron beams divided by the aperture array AA are arranged. One of a plurality of deflectors formed in the blanker array BA is shown in FIG. In FIG. 5, an opening AP is formed in the substrate 31, and a pair of electrodes 32 are arranged so as to sandwich the opening AP. The pair of electrodes 32 has a function of deflecting an electron beam and is called a blanking electrode (blanker). On the substrate 301, wiring (W) for individually turning on / off each blanking electrode 32 is formed.
[0038]
Returning to FIG. 4, the multi-charged beam lens ML is useful for increasing the convergence effect of the electron beam (charged beam) in the correction electron optical system array 503.
[0039]
The element electron optical system array unit LAU includes a first electron lens array LA1, a second electron lens array LA2, a third electron lens array LA3, and a fourth electron lens array LA4. These electron lens arrays LA1 to LA4 are electron lens arrays in which a plurality of electron lenses are two-dimensionally arranged in the same plane.
[0040]
FIG. 6 is a diagram illustrating the first electron lens array LA1. The first electron lens array LA1 is a multi-electrostatic lens composed of three pieces of an upper electrode substrate UE, an intermediate electrode substrate CE, and a lower electrode substrate LE on which a plurality of aperture electrodes are arranged. One set of upper opening electrode (opening electrode of upper electrode substrate US), intermediate opening electrode (opening electrode of intermediate electrode substrate CE), and lower opening electrode (opening electrode of lower electrode substrate LE) arranged in the direction of optical axis AX. An electron lens EL (a so-called unipotential lens) is configured. In this embodiment, the same potential (acceleration potential of the electron beam) is applied to all the opening electrodes formed on the upper electrode substrate UE and the lower electrode substrate LE. On the other hand, with respect to the intermediate electrode substrate CE, the opening electrodes arranged in the y direction (open electrodes having the same x coordinate) are connected by the common wiring (W), and a common potential is applied. With this structure, the LAU control circuit 12 to be described later can set the intermediate electrodes in the y-direction column to the same potential, and individually set the potentials of the opening electrodes for each y-direction column. That is, the optical characteristics (focal lengths) of the electron lenses in the y-direction column can be set to be substantially the same, and the optical characteristics (focal lengths) of the electron lenses in each column can be set individually. In other words, in this embodiment, the electron lenses in one column in the y direction are grouped, and the two-dimensionally arranged electron lenses are grouped.
[0041]
FIG. 7 is a diagram illustrating the second electron lens array LA2. The difference between the second electron lens array LA2 and the first electron lens system array LA1 is the configuration of the intermediate electrode substrate CE. That is, in the second electron lens array LA2, the rows in the x direction are grouped into one group, and the intermediate opening electrodes in each row are connected by a common wiring (W). With such a structure, the LAU control circuit 12 to be described later can set the opening electrodes in the x-direction row to the same potential, and can individually set the opening electrode potential for each row in the x-direction. That is, the optical characteristics (focal lengths) of the electron lenses in the x-direction columns can be set to be substantially the same, and the optical characteristics (focal lengths) of the electron lenses in each column can be individually set.
[0042]
The third electron lens array LA3 has the same structure as the first electron lens array LA1, and the fourth electron lens array LA4 has the same structure as the second electron lens array LA2.
[0043]
Next, the action that the electron beam receives from the element electron optical system of the element electron optical system array 503 will be described with reference to FIG. The electron beams EB1 and EB2 divided by the aperture array AA are incident on the element electron optical system array unit LAU via different blanking electrodes formed on the blanker array BA. The electron beam EB1 passes through the electron lens EL11 of the first electron lens array LA1, the electron lens EL21 of the second electron lens array LA2, the electron lens EL31 of the third electron lens array LA3, and the electron lens EL41 of the fourth electron lens array LA4. Thus, an intermediate image img1 of the electron source is formed. On the other hand, the electron beam EB2 includes the electron lens EL12 of the first electron lens array LA1, the electron lens EL22 of the second electron lens array LA2, the electron lens EL32 of the third electron lens array LA3, and the electron lens EL42 of the fourth electron lens array LA4. Then, an intermediate image img2 of the electron source is formed.
[0044]
At this time, as described above, the electron lenses arranged in the x direction in the first and third electron lens arrays LA1 are set so as to have different focal lengths, and in the second and fourth electron lens arrays LA1 in the x direction. The arranged electron lenses are set to have the same focal length. Furthermore, the combined focal length of the electron lens EL11, electron lens EL21, electron lens EL31, and electron lens EL41 through which the electron beam EB1 passes, and the electron lens EL12, electron lens EL22, electron lens EL32, and electron lens EL42 through which the electron beam EB2 passes. The focal lengths of the respective electron lenses are set so that the combined focal lengths are substantially equal. Thereby, the intermediate images img1 and img2 of the electron source are formed at substantially the same magnification. Further, intermediate images img1 and img2 are formed in accordance with the field curvature so as to correct the field curvature that occurs when each intermediate image is reduced and projected onto the wafer 505 via the reduction electron optical system 504. Each position in the optical axis AX direction is determined.
[0045]
Further, when an electric field is applied to the passing blanking electrode, the electron beams EB1 and EB2 change their trajectories as indicated by broken lines in FIG. 8 and cannot pass through the openings corresponding to the respective electron beams of the stopper array SA. The electron beams EB1 and EB2 are blocked.
[0046]
Next, the configuration of the control system of the electron beam exposure apparatus shown in FIG. 3 will be described with reference to FIG. The BA control circuit 111 is a control circuit that individually controls on / off of the blanking electrodes of the blanker array BA, and the LAU control circuit 112 is a control circuit that controls the electro-optical characteristics (focal length) of the lens array unit LAU. .
[0047]
The D_STIG control circuit 113 controls the dynamic stig coil 508 to control astigmatism of the reduction electron optical system 504, and the D_FOCUS control circuit 114 controls the dynamic focus coil 507 to focus the reduction electron optical system 504. A control circuit for controlling the deflection, a deflection control circuit 115 for controlling the deflector 506, and an optical characteristic control circuit 516 for adjusting the optical characteristics (magnification, distortion, rotational aberration, optical axis, etc.) of the reduction electron optical system 504. Control circuit.
[0048]
The stage drive control circuit 117 is a control circuit that controls the drive of the XY stage 510 in cooperation with the laser interferometer LIM that controls the drive of the θ-Z stage 509 and detects the position of the XY stage 10.
[0049]
The control system 120 controls the plurality of control circuits based on data read from the memory 121 in which information on patterns to be drawn is stored. The control system 120 is controlled by a CPU 123 that controls the entire electron beam exposure apparatus via an interface 122.
[0050]
The exposure operation of the electron beam exposure apparatus of this embodiment will be described with reference to FIG. The control system 120 instructs the deflection control circuit 115 based on the exposure control data provided from the memory 121, deflects a plurality of electron beams by the deflector 506, and instructs the BA control circuit 111 to perform the wafer 505. The blanking electrodes of the blanker array BA are individually turned on / off according to the pattern to be drawn. At this time, the XY stage 511 continuously moves in the y direction, and the deflector 506 deflects the plurality of electron beams so that the plurality of electron beams follow the movement of the XY stage 511. Each electron beam scans and exposes the corresponding element exposure region (EF) on the wafer 505 as shown in FIG. The element exposure area (EF) of each electron beam is set so as to be adjacent in two dimensions. As a result, a subfield (SF) composed of a plurality of element exposure areas (EF) that are exposed simultaneously is formed. Exposed.
[0051]
After the exposure of one subfield (SF1) is completed, the control system 120 instructs the deflection control circuit 115 to expose the next subfield (SF2), and the deflector 506 causes the stage scanning direction (y A plurality of electron beams are deflected in a direction (x direction) orthogonal to the (direction). At this time, as the subfield changes due to deflection, the aberration when each electron beam is reduced and projected via the reduction electron optical system 504 also changes. Therefore, the control system 120 instructs the LAU control circuit 112, the D_STIG control circuit 113, and the D_FOCUS control circuit 114 to correct the changed aberration, so that the lens array unit LAU, the dynamic stig coil 508, and the dynamic focus coil are corrected. 507 is adjusted. Then, as described above, the subfield 2 (SF2) is exposed by exposing the corresponding element exposure region (EF) with each electron beam.
[0052]
With this method, as shown in FIG. 10, the subfields (SF1 to SF6) are sequentially exposed. As a result, on the wafer 505, a main field (MF) composed of subfields (SF1 to SF6) arranged in a direction (x direction) orthogonal to the stage scanning direction (y direction) is exposed.
[0053]
The control system 120, after exposing the main field 1 (MF1) shown in FIG. 10, instructs the deflection control circuit 115 to sequentially arrange a plurality of main fields 1 (MF2, MF3, MF4...) Aligned in the stage scanning direction (y direction). The electron beam is deflected and exposed. As a result, as shown in FIG. 10, a pattern is drawn on a stripe (STRIPE1) composed of main fields (MF2, MF3, MF4...). Then, the control system 120 steps the XY stage 510 in the x direction to expose the next stripe (STRIPE2).
[0054]
Next, an embodiment of a device production method using the electron beam exposure apparatus will be described.
[0055]
FIG. 11 is a diagram showing a flow of manufacturing a microdevice (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.). In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (exposure control data creation), exposure control data for the exposure apparatus is created based on the designed circuit pattern. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the wafer and the exposure apparatus to which the prepared exposure control data is input. The next step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, and is a process such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), or the like. including. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, the semiconductor device is completed and shipped (step 7).
[0056]
FIG. 12 is a diagram showing a detailed flow of the wafer process of FIG. In step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern is printed onto the wafer by exposure using the exposure apparatus described above. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.
[0057]
By using the manufacturing method of the present embodiment, a highly integrated semiconductor device that has been difficult to manufacture can be manufactured at low cost.
[0058]
[Second Embodiment]
This embodiment provides a specific example in which a solid member and an adhesive that bonds the solid member to the upper electrode substrate and the lower electrode substrate are used as the connecting portion 2 in the first embodiment. FIG. 13 is a sectional view schematically showing the structure of a multi-charged beam lens according to the second embodiment of the present invention.
[0059]
The multi-charged beam lens 600 has a structure in which three electrode substrates 1a, 1b, and 1c are arranged via an insulator 5 as in the first embodiment. The three electrode substrates 1a, 1b, and 1c are formed with assembly grooves (positioning portions) 4a, 4b, and 4c, respectively, and the insulator 5 is disposed between the grooves 4a, 4b, and 4c. Thus, the three electrode substrates 1a, 1b, and 1c are positioned relative to each other. Of the upper electrode substrate 1a, intermediate electrode substrate 1b, and lower electrode substrate 1c, the same potential is applied to the upper electrode substrate 1a and the lower electrode substrate 1c. As shown in FIG. 13, the intermediate electrode substrate 1b is typically given a negative potential with respect to the potentials of the upper electrode substrate 1a and the lower electrode substrate 1c.
[0060]
In this embodiment, the multi-charged beam lens 600 is assembled by connecting an upper electrode substrate 1a and a lower electrode substrate 1c, to which the same potential is applied, by a solid member 2b via an adhesive 2a. By connecting the upper electrode substrate 1a and the lower electrode substrate 1b, to which the same potential is applied, by the connecting portion (adhesive 2a, solid member 2b), the problem of dielectric breakdown in the member for assembling the electrode substrate electrodes 1a to 1c is solved. Can be solved.
[0061]
Next, a method for manufacturing the multi-charged beam lens 600 shown in FIG. 13 will be described. First, the manufacturing method of the electrode substrates 1a, 1b, and 1c is the same as the method described with reference to FIG. 2 as the first embodiment.
[0062]
The assembly of the electrode substrates 1a, 1b, and 1c can be performed as follows. First, the insulator 5 is disposed between the groove 4a of the upper electrode substrate 1a and the groove 4b of the intermediate electrode substrate 1b, and between the groove 4b of the intermediate electrode substrate 1b and the groove 4c of the lower electrode substrate 1c. Thereafter, the upper electrode 1a and the lower electrode 1c to which the same potential can be applied are connected by the solid member 2b through the adhesive 2a.
[0063]
In the multi-charged beam lens 600 shown in FIG. 13, as in the first embodiment, an upper electrode substrate 1a and a lower electrode substrate 1c are installed, and a negative voltage is applied to the intermediate electrode substrate 1b, whereby an electron beam It is possible to obtain a lens action for a charged beam such as. Here, when the conductive material is used as the adhesive 2a as the connecting portion and the solid member 2b, the conductive wire only needs to be connected to one of the upper electrode substrate 1a and the lower electrode substrate 1c, so that the wiring is simplified. Can be realized.
[0064]
In this way, by connecting the upper electrode substrate 1a and the lower electrode substrate 1c using the solid member 2b, when the distance between the substrates 1a and 1b is large (for example, it is difficult to bond only with the adhesive) Even in the case of a large size, the two substrates 1a and 1b can be easily connected.
[0065]
Although FIG. 13 shows an example in which a multi-charged beam lens is configured with three electrode substrates, the number of electrode substrates is not limited to three, and may be other numbers. FIG. 14 is a diagram showing an example of a multi-charged beam lens constituted by five electrode substrates 1a to 1e in which openings 3a to 3e and grooves 4a to 4e are formed as such modifications. In the multi-charged beam lens 700 shown in FIG. 14, the upper electrode substrate 1a and the lower electrode substrate 1e are connected by the solid member 2b through the adhesive 2a, and are arranged between the upper electrode substrate 1a and the lower electrode substrate 1e. The other electrode substrates 1b, 1c, 1d are arranged so as not to adhere to the upper electrode substrate 1a, the lower electrode substrate 1e, the adhesive 2a, and the solid member 2b. Further, the five electrode substrates 1a to 1e are positioned with respect to each other by disposing the insulator 5 between the grooves 4a to 4e respectively formed therein.
[0066]
The multi-charged beam lens exemplarily described here can also be applied to a charged beam exposure apparatus such as the electron beam exposure apparatus exemplarily shown in FIG. 3 as in the first embodiment. Such a charged beam exposure apparatus is suitable for manufacturing devices such as semiconductor devices.
[0067]
[Third Embodiment]
This embodiment provides a specific example in which three or more electrode substrates are connected by a connecting member. FIG. 15 is a sectional view schematically showing the structure of a multi-charged beam lens according to the third embodiment of the present invention. A multi-charged beam lens 800 shown in FIG. 15 includes five first to fifth electrode substrates 1a to 1e each having openings 3a to 3e and grooves 4a to 4e. Here, as shown in FIG. 15, the same potential is applied to the first electrode (upper electrode) 1a, the third electrode 1c, and the fifth electrode (lower electrode) 1e, and the second electrode 1b and the fourth electrode 1d. A negative potential can be applied to the potentials of the first electrode (upper electrode) 1a, the third electrode 1c, and the fifth electrode (lower electrode) 1e. The potentials applied to the second electrode 1b and the fourth electrode 1d may be the same potential or may be different from each other.
[0068]
A multi-charged beam lens 800 shown in FIG. 15 has a function equivalent to a structure in which multi-charged beam lenses 100 as shown in FIG.
[0069]
The first electrode (upper electrode) 1a, the third electrode 1c, and the fifth electrode (lower electrode) 1e to which the same potential is applied are connected by a solid member 2b through an adhesive 2a. Here, instead of such a connection method, a structure in which only an adhesive is used as the connection portion may be employed. For assembling the first to fifth electrodes 1a to 1e by connecting the first electrode (upper electrode) 1a, the third electrode 1c, and the fifth electrode (lower electrode) 1e to which the same potential is applied by the connecting portion. The problem of dielectric breakdown in the member can be solved.
[0070]
Next, a method for manufacturing the multi-charged beam lens 800 shown in FIG. 15 will be described. First, the manufacturing method of the electrode substrates 1a to 1e is the same as the method described with reference to FIG. 2 as the first embodiment.
[0071]
The assembly of the electrode substrates 1a to 1e can be performed as follows. First, between the groove 4a of the first substrate 1a and the groove 4b of the second electrode substrate 1b, between the groove 4b of the second electrode substrate 1b and the groove 4c of the third electrode substrate 1c, and the groove 4c of the third substrate 1c. And the groove 4d of the fourth electrode substrate 1d, and the insulator 5 between the groove 4d of the fourth electrode substrate 1d and the groove 4e of the fifth electrode substrate 1e. Thereafter, the first electrode 1a, the third electrode 1c, and the fifth electrode 1e to which the same potential can be applied are connected by the solid member 2b via the adhesive 2a.
[0072]
In the multi-charged beam lens 800 shown in FIG. 15, the first electrode 1a, the third electrode 1c, and the fifth electrode 1e are grounded, and a negative voltage is applied to the second electrode 1b and the fourth electrode 1d. It is possible to obtain a lens action for a charged beam such as. Here, when a conductive material is used as the adhesive 2a as the connecting portion and the solid member 2b, the conductive wire is connected to only one of the first electrode 1a, the third electrode 1c, and the fifth electrode 1e. Since it is good, the wiring can be simplified.
[0073]
Here, the configuration of the multi-charged beam lens having a two-stage structure has been described as an example, but it is obvious that the number of repetitions of the structure can be increased, and a multi-charged beam lens having a structure with three or more breaks is manufactured. You can also.
[0074]
In this embodiment, an example in which a single-stage multi-charged beam lens is configured by three electrode substrates (however, the electrode substrate is shared between breaks) has been described. The beam lens may be composed of an electrode substrate other than three.
[0075]
The multi-charged beam lens exemplarily described here can also be applied to a charged beam exposure apparatus such as the electron beam exposure apparatus exemplarily shown in FIG. 3 as in the first embodiment. Such a charged beam exposure apparatus is suitable for manufacturing devices such as semiconductor devices.
[0076]
【The invention's effect】
According to the present invention, for example, the problem of dielectric breakdown in a member for assembling a plurality of electrode substrates can be solved.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating the structure of a multi-charged beam lens according to a first embodiment of the present invention.
FIG. 2 is a diagram illustrating a method for manufacturing each electrode substrate constituting a multi-charged beam lens.
FIG. 3 is a diagram showing a configuration of a multi-charged beam exposure apparatus.
FIG. 4 is a diagram for explaining details of an element electron optical system array;
5 is a diagram for explaining the details of the blanker array (BA) of FIG. 4; FIG.
6 is a diagram illustrating details of the first electron lens array (LA1) and the third electron lens array (LA3) in FIG. 4; FIG.
7 is a diagram illustrating details of a second electron lens array (LA2) and a fourth electron lens array (LA4) in FIG. 4; FIG.
FIG. 8 is a diagram for explaining the action that an electron beam receives from the element electron optical system of the element electron optical system array 503;
9 is a diagram for explaining the configuration of a control system of the multi-charged beam exposure apparatus shown in FIG.
10 is a view for explaining an exposure method by the multi-charged beam exposure apparatus shown in FIG. 3;
FIG. 11 is a diagram for explaining a manufacturing flow of a microdevice.
12 is a diagram for explaining the details of the wafer process of FIG. 11; FIG.
FIG. 13 is a diagram illustrating the structure of a multi-charged beam lens according to a second embodiment of the present invention.
FIG. 14 is a diagram illustrating the structure of a multi-charged beam lens according to a second embodiment of the present invention.
FIG. 15 is a diagram illustrating the structure of a multi-charged beam lens according to a third embodiment of the present invention.
FIG. 16 is a diagram illustrating a conventional charged beam lens.
[Explanation of symbols]
1a to 1e electrode substrate
2 connecting parts (adhesives, etc.)
2a Adhesive
2b Solid member
3a-3e Lens aperture
4a-4e Groove for assembly
5 Insulator
6 Silicon wafer
7 Mask
8 Conductor film

Claims (4)

At least three electrode substrates having a plurality of apertures through the load electric beam respectively, each between the insulator of the at least three electrode substrates are disposed, at both ends thereof of the at least three electrode substrates A charged beam in which a common potential is applied to at least two electrode substrates including a plurality of electrode substrates, and a potential different from the common potential is applied to at least one electrode substrate between each of the at least two electrode substrates. Lenses,
A connecting portion including at least an adhesive for connecting the outer peripheral portions of the at least two electrode substrates; and the at least one electrode substrate has a shape or a dimension such that an outer peripheral end thereof does not contact the connecting portion. load electrostatic beam lens according to claim. The connecting portion, the load electric beam lens according to claim 1, characterized by being composed of a conductive material. Have a load electric beam lens according to claim 1 or 2, charged beam exposure apparatus characterized by drawing a pattern on a substrate by a charged beam from the charged beam lens. Drawing a pattern on a substrate using the charged beam exposure apparatus according to claim 3;
Developing the substrate on which the pattern is drawn in the step;
A device manufacturing method comprising:

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