JP2004235435A - Multi-charged particle beam lens - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem of an electrical breakdown in a member for assembling a plurality of electrode substrates. <P>SOLUTION: Three electrode substrates 1a, 1b, 1c are disposed through an insulator 5, and an identical potential (common potential) is given to an upper electrode 1a and a lower electrode 1c, which are connected to each other by a connection part 2 of an adhesive, etc. Another potential is given to an intermediate electrode 1b, which is disposed so as not to come into contact with the connection part 2. As a potential difference is not applied to the connection part 2, there disappears the trouble of the electrical breakdown. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a multi-charged beam lens, a charged beam exposure apparatus, and a device manufacturing method.
[0002]
[Prior art]
In the production of semiconductor devices, the electron beam exposure technology has been spotlighted as a promising candidate for lithography capable of exposing fine patterns of 0.1 μm or less, and there are several methods. For example, there is a variable rectangular beam system that draws a pattern with a so-called one-stroke stroke. However, this method has a low throughput and has many problems as an exposure apparatus for mass production. In order to improve the throughput, there has been proposed a graphic batch exposure method for reducing and transferring a pattern formed on a stencil mask. Although this method is advantageous for a simple pattern having many repetitions, random patterns such as a logic wiring layer have many problems in terms of throughput, and greatly hinder improvement in productivity when put to practical use.
[0003]
On the other hand, there has been proposed a multi-beam system in which a pattern is simultaneously drawn with a plurality of electron beams without using a mask, which eliminates physical mask production and replacement, and provides many advantages for practical use. Have. What is important in multiplying the electron beam is the number of electron lenses arranged in an array. That is, since the number of electron beams is determined by the number of electron lenses, the number of electron lenses is a major factor in determining throughput. Therefore, how to improve the lens performance while miniaturizing and increasing the density of the lens is one of the important factors in improving the performance of the multi-beam exposure apparatus.
[0004]
Electron lenses are classified into an electromagnetic type and an electrostatic type. The electrostatic type can be said to be advantageous in miniaturization as compared with the magnetic field type because it does not require a coil core or the like and has a simple configuration. Here, main related arts related to an electrostatic electron lens (electrostatic lens) will be described below.
[0005]
A. D. Feinerman et al. (J. Vac. Sci. Technology. A 10 (4), p611, 1992) anodically bond an electrode fabricated by micromechanics technology to a V-groove fabricated by crystal anisotropic etching of Si and a fiber. This discloses that a three-dimensional structure including three electrodes, which is an electrostatic single lens, is formed. The Si is provided with a membrane frame, a membrane, and an opening through which the electron beam passes. In addition, K. Y. Lee et al. (J. Vac. Sci. Technology. B12 (6), p3425, 1994) disclose a structure in which a plurality of Si and Pyrex (registered trademark) glasses are laminated and joined by using an anodic bonding method. To produce an aligned microcolumn electron lens. Sasaki (J. Vac. Sci. Technol. 19, 963 (1981)) discloses a configuration in which three electrodes having a lens aperture arrangement are arranged in an Einzel lens arrangement. In the electrostatic lens configured as described above, a lens function can be generally obtained by applying a voltage to the center electrode among the three electrodes and grounding the other two lenses.
[0006]
[Problems to be solved by the invention]
However, when an electron lens is formed by combining electrodes in the above-described conventional example, the method of Feinerman and the method of Lee and the like require a new anodic bonding apparatus in addition to a process apparatus for manufacturing an electrode. In the method of Sasaki, details of a method of forming an electron lens by combining electrodes are not clear.
[0007]
In the case where miniaturization is promoted by bonding the electrodes, as shown in FIG. 16, when the electrodes 1 are fixed to each other with the adhesive 2 sandwiching the insulator 5, the insulation of the adhesive 2 is generally better than that of the insulator 5. Since the withstand voltage is low, dielectric breakdown may occur in the adhesive 2, which may cause a decrease in the operating voltage of the electrostatic lens.
[0008]
The present invention has been made in view of the above background, and has as its object to solve, for example, the problem of dielectric breakdown in a member for assembling a plurality of electrode substrates.
[0009]
[Means for Solving the Problems]
One aspect of the present invention relates to a multi-charged beam lens. The multi-charged beam lens according to the present invention includes at least three electrode substrates each having a plurality of apertures through which a charged beam passes, and at least two of the at least three electrode substrates to which a common potential (for example, a ground potential) is applied. And a connecting portion for connecting the electrode substrates. Here, the connecting portion may be arranged so as not to contact an electrode substrate to which a potential (eg, a negative potential) different from the common potential is applied among the at least three electrode substrates. According to such a configuration, an advantageous effect that dielectric breakdown does not occur via the connecting portion can be obtained.
[0010]
According to a preferred embodiment of the present invention, the connecting portion may include an adhesive, and bond the solid member and the at least two electrode substrates to which the solid member and the common potential are applied. An adhesive may be included. The former is particularly useful, for example, when the distance between the electrode substrates to be connected is small, and the latter is particularly useful when the distance between the electrode substrates to be connected is large.
[0011]
According to a preferred embodiment of the present invention, the multi-charged beam lens further includes an insulator disposed between the at least three electrode substrates so as to position the at least three electrode substrates relative to each other. Preferably, it is provided. In this case, it is preferable that the at least three electrode substrates have a positioning groove, and the insulator is disposed in the groove. According to such a configuration, for example, the at least three electrode substrates can be assembled by the connecting portion and the insulator, so that the assembling operation is facilitated.
[0012]
According to a preferred embodiment of the present invention, the connecting portion is preferably made of a conductive material. In this case, for example, by connecting a conducting wire to any of the at least two electrode substrates connected by the connecting portion, a common potential can be applied to the at least two electrode substrates.
[0013]
A second aspect of the present invention relates to a charged beam exposure apparatus, which includes the above-described multi-charged beam lens, and is configured to draw a pattern on a substrate by a charged beam from the multi-charged beam lens. Such a charged beam exposure apparatus has high reliability because the multi-charged beam lens has high insulation performance.
[0014]
A third aspect of the present invention relates to a device manufacturing method, comprising the steps of: drawing a pattern on a substrate coated with a photosensitive agent using the above-described charged beam exposure apparatus; and developing the substrate on which the pattern is drawn. And
[0015]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.
[0016]
[First Embodiment]
FIG. 1 is a sectional view schematically showing the structure of the multi-charged beam lens according to the first embodiment of the present invention. The multi-charged beam lens 100 has a structure in which three electrode substrates 1a, 1b, and 1c are arranged via an insulator 5. Grooves (positioning portions) 4a, 4b, 4c for assembling are formed on the three electrode substrates 1a, 1b, 1c, respectively, and the insulator 5 is arranged between these grooves 4a, 4b, 4c. Accordingly, the three electrode substrates 1a, 1b, and 1c are positioned with respect to each other. In this embodiment, the same potential (common potential) is applied to the upper electrode substrate 1a and the lower electrode substrate 1c among the upper electrode substrate 1a, the intermediate electrode substrate 1b, and the lower electrode substrate 1c. The multi-charged beam lens 100 is assembled by connecting the upper electrode substrate 1a and the lower electrode substrate 1c, to which the same potential is applied, by the connecting portion 2.
[0017]
Here, the connecting portion 2 is arranged so as not to contact the intermediate electrode substrate 1b. According to such a configuration, since a potential difference is not applied to the connection portion 2, the problem of dielectric breakdown in a member for connecting the electrode substrates is solved. The connecting portion 2 may be made of, for example, only an adhesive, or may be made of a solid member and an adhesive for bonding the solid member to the upper electrode substrate 1a and the lower electrode substrate 1c. The upper electrode substrate 1a and the lower electrode substrate 1c may be configured by a member that mechanically connects the upper electrode substrate 1a and the lower electrode substrate 1c. However, when the distance between the electrode substrates to be connected is small (for example, when it is small enough to be able to be sufficiently connected by an adhesive), the connecting portion 2 is formed from the viewpoint of ease of assembly and simplification of the structure. It is preferable that only the adhesive be used.
[0018]
As shown in FIG. 1, the intermediate electrode substrate 1b is typically given a negative potential with respect to the potentials of the upper electrode substrate 1a and the lower electrode substrate 1c.
[0019]
In this embodiment, the multi-charged beam lens 100 includes three electrode substrates, but the number of electrode substrates is not limited to three, and may be another number. Further, in this case, it is desirable that a structure in which the same potential is applied to at least two electrode substrates at both ends (that is, the uppermost electrode substrate and the lowermost electrode substrate) in the arrangement of the plurality of electrode substrates is desirable. According to this, all the electrode substrates can be fixed by arranging an insulator between the electrode substrates and connecting the two electrode substrates at both ends by the connecting portion.
[0020]
Next, a method for manufacturing each of the electrode substrates 1a, 1b, and 1c shown in FIG. 1 will be described with reference to FIG. First, a silicon wafer 6 is prepared in the step shown in FIG. 2A, and a resist is applied to the surface of the silicon wafer 6 by spin coating or the like in a step shown in FIG. The resist is patterned to form a mask 7. Next, in the step shown in FIG. 2C, lens openings 3 (3a, 3b, 3c) are formed in silicon wafer 6 by dry etching (anisotropic etching) using an etching gas such as SF6 gas as mask 7. The grooves 4 (4a, 4b, 4c) for assembly are formed, and then the resist 7 is removed. Then, in the step shown in FIG. 2D, at least the inner wall of the lens opening 3 of the silicon wafer 6 and its peripheral portion, preferably, the entire surface of the silicon wafer 6 (including the inner wall of the lens opening 3) are made of Au or the like by sputtering. A conductive material is formed, thereby forming the conductive film 8.
[0021]
Here, the shape and / or dimensions of the intermediate electrode substrate 1 b, that is, the electrodes other than the electrode substrate connected by the connecting portion 2 are determined so as not to contact the connecting portion 2. Typically, the intermediate electrode 1b can be made smaller in size than the upper electrode substrate 1a and the lower electrode substrate 1c so that the outer peripheral end does not contact the connecting portion 2.
[0022]
Next, a process of assembling the electrode substrates 1a, 1b, and 1c manufactured as described above will be described. In the assembling process, the insulators 5 are arranged between the groove 4a of the upper electrode substrate 1a and the groove 4b of the intermediate electrode substrate 1b and between the groove 4b of the intermediate electrode substrate 1b and the groove 4c of the lower electrode substrate 1c. After that, the upper electrode 1a and the lower electrode 1c to which the same potential can be applied are connected by the connecting portion 2 such as an adhesive. By this assembling process, the multi-charged beam lens 100 shown in FIG. 1 is obtained.
[0023]
Note that, even when a multi-charged beam lens is configured with three or more electrode substrates, a multi-charged beam lens can be manufactured by applying the same method as described above.
[0024]
In the multi-charged beam lens 100 shown in FIG. 1, the upper electrode substrate 1a and the lower electrode substrate 1c are grounded, and a negative voltage is applied to the intermediate electrode substrate 1b to obtain a lens effect on a charged beam such as an electron beam. Can be. Here, when the connecting portion 2 is made of a conductive material (for example, a conductive adhesive), the conductive wire may be connected to only one of the upper electrode substrate 1a and the lower electrode substrate 1c, so that the wiring is It can be simplified.
[0025]
In addition, in the schematic cross-sectional view shown in FIG. 1, five electron lenses are shown, but the number of the electronic lenses can be one-dimensionally or two-dimensionally arranged according to a design specification. In a typical multi-charged beam lens, several hundred to several thousand electron lenses can be arranged two-dimensionally.
[0026]
Next, an electron beam exposure apparatus (drawing apparatus) according to a preferred embodiment of the present invention will be described as an application example of a multi-charged beam lens that can be manufactured by the above method. Although the following example is an exposure apparatus that employs an electron beam as a charged beam, the present invention can also be applied to an exposure apparatus that uses another type of beam such as an ion beam as a charged beam.
[0027]
FIG. 3 is a diagram showing a schematic configuration of an electron beam exposure apparatus according to a preferred embodiment of the present invention. Referring to FIG. 3, an electron gun 501 as an electron generator includes a cathode 501a, a grid 501b, and an anode 501c. Electrons emitted from the cathode 501a form a crossover image between the grid 501b and the anode 501c. Form. Hereinafter, this crossover image is referred to as an electron source.
[0028]
The electrons emitted from this electron source are converted into one substantially parallel electron beam by the condenser lens 502 arranged so that the front focal position coincides with the position of the electron source. The condenser lens 2 can be composed of, for example, two electronic lenses 521 and 522. A substantially parallel electron beam emitted from the condenser lens 2 enters a correction electron optical system array (correction electron optical system) 503.
[0029]
The element electron optical system array 503 includes, as a constituent element thereof, a multi-charged beam lens that can be manufactured by applying the above-described manufacturing method. The element electron optical system array 503 includes an aperture array, a blanker array, an element electron optical system array unit, a stopper array, and the like, in addition to the multi-charged beam lens shown in simplified form in FIG. Can be configured.
[0030]
The correction electron optical system array 503 includes a plurality of electron lenses (element electron optical systems) arranged two-dimensionally, and forms a plurality of intermediate images of the electron source. Each intermediate image is reduced and projected on a wafer 505 by a reduction electron optical system 504 described later. Here, the plurality of correction electron optical system arrays 503 are arranged such that the distance between the plurality of electron source images projected on the wafer 505 on the wafer 505 is an integral multiple of the size of the electron source image on the wafer 505. An electronic lens is arranged. Further, the correction electron optical system array 503 forms a plurality of intermediate images at positions where the field curvature of the reduction electron optical system 504 can be corrected, and the plurality of intermediate images are formed on the wafer 505 by the reduction electron optical system 504. Is configured to correct in advance the aberration that occurs when the image is reduced and projected.
[0031]
The reduction electron optical system 504 includes a symmetric magnetic tablet including a first projection lens 541 and a second projection lens 542, and a symmetric magnetic tablet including a first projection lens 543 and a second projection lens 544. Assuming that the focal length of the first projection lens 541 (543) is f1 and the focal length of the second projection lens 542 (544) is f2, the distance between the first projection lens 541 (543) and the second projection lens 542 (544). Is f1 + f2. The object point on the optical axis (axis of the electron optical system) AX is at the focal position of the first projection lens 541 (543), and its image point is at the focal position of the second projection lens 542 (544). This image is reduced to -f2 / f1. In addition, since the lens magnetic fields of the first projection lens 541 (543) and the second projection lens 542 (544) are determined to act in opposite directions, theoretically, spherical aberration, isotropic astigmatism, etc. Except for the five aberrations of isotropic coma, curvature of field, and axial chromatic aberration, other Seidel aberrations and chromatic aberrations related to rotation and magnification are canceled out.
[0032]
The deflector 506 collectively deflects a plurality of electron beams between the elementary electron optical system array 503 and the wafer 505 to shift a plurality of electron source images on the wafer 505 in the x and y directions with a common displacement. It is a deflector that displaces. The deflector 506 includes, for example, a main deflector that deflects a plurality of electron beams with a wide deflection width and a sub deflector that deflects a plurality of electron beams with a narrow deflection width. Typically, the main deflector is an electromagnetic deflector and the sub deflector is an electrostatic deflector.
[0033]
The dynamic focus coil 507 corrects the shift of the focus position of the electron source image due to the deflection aberration generated when the deflector 506 is operated. Like the dynamic focus coil 507, the dynamic stig coil 508 corrects astigmatism of deflection aberration generated by deflection.
[0034]
The wafer (substrate) 505 to which the photosensitive agent has been applied is placed on the θ-Z stage 509. The θ-Z stage 509 can be configured to be able to move the wafer 505 in the direction of the optical axis AX (Z axis) and in the direction of rotation around the Z axis. A stage reference plate 513 and a Faraday cup 510 can be arranged on the θ-Z stage 509. The θ-Z stage 509 is mounted on the XY stage 511.
[0035]
Next, the correction electron optical system array 503 will be described with reference to FIG. FIG. 4A is a correction electron optical system array viewed from the electron gun 1 side, and FIG. 4B is a cross-sectional view along AA ′ in FIG. 4A.
[0036]
The correction electron optical system array 503 includes an aperture array AA, a blanker array BA, a multi-charged beam lens ML, an element electron optical system array unit LAU, and a stopper array SA arranged in this order from the electron gun 1 side along the optical axis AX. May be included.
[0037]
The aperture array AA is a substrate on which a plurality of openings are formed, and divides a substantially parallel electron beam from the condenser lens 502 into a plurality of electron beams. The blanker array BA is a substrate on which a plurality of deflectors for individually deflecting a plurality of electron beams divided by the aperture array AA are arranged. One of the plurality of deflectors formed in the blanker array BA is shown in FIG. In FIG. 5, an opening AP is formed in a substrate 31, and a pair of electrodes 32 are arranged so as to sandwich the opening AP. The pair of electrodes 32 has a function of deflecting the electron beam, and is called a blanking electrode (blanker). On the substrate 301, a wiring (W) for individually turning on / off each blanking electrode 32 is formed.
[0038]
Returning to FIG. 4, the multi-charged beam lens ML is useful in the correction electron optical system array 503 to increase the convergence of an electron beam (charged beam).
[0039]
The element electron optical system array unit LAU includes a first electron lens array LA1, a second electron lens array LA2, a third electron lens array LA3, and a fourth electron lens array LA4. These electronic lens arrays LA1 to LA4 are electronic lens arrays in which a plurality of electronic lenses are two-dimensionally arranged on the same plane.
[0040]
FIG. 6 is a diagram illustrating the first electron lens array LA1. The first electron lens array LA1 is a multi-electrostatic lens including three upper electrode substrates UE, intermediate electrode substrates CE, and lower electrode substrates LE on each of which a plurality of aperture electrodes are arranged. One set of upper opening electrode (opening electrode of upper electrode substrate US), intermediate opening electrode (opening electrode of intermediate electrode substrate CE), and lower opening electrode (opening electrode of lower electrode substrate LE) arranged in the optical axis AX direction are one. An electron lens EL (a so-called unipotential lens) is configured. In this embodiment, the same potential (acceleration potential of the electron beam) is applied to all the opening electrodes formed on the upper electrode substrate UE and the lower electrode substrate LE. On the other hand, with respect to the intermediate electrode substrate CE, the opening electrodes arranged in the y direction (opening electrodes having the same x coordinate) are connected by a common wiring (W), and a common potential is applied. With such a structure, the LAU control circuit 12 described later can set the intermediate electrodes in the columns in the y direction to the same potential and individually set the potentials of the aperture electrodes for each column in the y direction. That is, the optical characteristics (focal lengths) of the electron lenses in the rows in the y direction can be set substantially the same, and the optical characteristics (focal lengths) of the electron lenses in each row can be set individually. In other words, in this embodiment, the electron lenses in one row in the y direction are regarded as one group, and the two-dimensionally arranged electron lenses are grouped.
[0041]
FIG. 7 is a diagram illustrating the second electron lens array LA2. The difference between the second electron lens array LA2 and the first electron lens system array LA1 is the configuration of the intermediate electrode substrate CE. That is, in the second electron lens array LA2, each row in the x direction is a group, and the intermediate aperture electrodes in each row are connected by the common wiring (W). With such a structure, the opening electrodes in the x-direction rows can be set to the same potential by the LAU control circuit 12 described later, and the potentials of the opening electrodes can be individually set for each row in the x-direction. That is, the optical characteristics (focal length) of the electron lenses in the row in the x direction are set to be substantially the same, and the optical characteristics (focal length) of the electron lenses in each row can be set individually.
[0042]
The third electron lens array LA3 has the same structure as the first electron lens array LA1, and the fourth electron lens array LA4 has the same structure as the second electron lens array LA2.
[0043]
Next, the operation of the electron beam from the element electron optical system of the element electron optical system array 503 will be described with reference to FIG. The electron beams EB1 and EB2 split by the aperture array AA are incident on the element electron optical system array unit LAU via different blanking electrodes formed on the blanker array BA. The electron beam EB1 passes through the electron lens EL11 of the first electron lens array LA1, the electron lens EL21 of the second electron lens array LA2, the electron lens EL31 of the third electron lens array LA3, and the electron lens EL41 of the fourth electron lens array LA4. Thus, an intermediate image img1 of the electron source is formed. On the other hand, the electron beam EB2 is generated by the electron lens EL12 of the first electron lens array LA1, the electron lens EL22 of the second electron lens array LA2, the electron lens EL32 of the third electron lens array LA3, and the electron lens EL42 of the fourth electron lens array LA4. To form an intermediate image img2 of the electron source.
[0044]
At this time, as described above, the electron lenses arranged in the x direction in the first and third electron lens arrays LA1 are set so as to have mutually different focal lengths, and in the second and fourth electron lens arrays LA1 in the x direction. The electron lenses arranged side by side are set to have the same focal length. Further, the combined focal length of the electron lenses EL11, EL21, EL31, and EL41 through which the electron beam EB1 passes, and the electron lenses EL12, EL22, EL32, EL32, and EL42 through which the electron beam EB2 passes. Are set such that the combined focal lengths of the electronic lenses are substantially equal. Thereby, the intermediate images img1 and img2 of the electron source are formed at substantially the same magnification. Further, intermediate images img1 and img2 are formed in accordance with the respective field curvatures so as to correct the field curvatures generated when each intermediate image is reduced and projected on the wafer 505 via the reduction electron optical system 504. Each position in the optical axis AX direction is determined.
[0045]
Further, when an electric field is applied to the passing blanking electrode, the electron beams EB1 and EB2 change their trajectories as shown by the broken lines in FIG. 8 and cannot pass through the openings of the stopper array SA corresponding to the respective electron beams. , The electron beams EB1, EB2 are cut off.
[0046]
Next, the configuration of the control system of the electron beam exposure apparatus shown in FIG. 3 will be described with reference to FIG. The BA control circuit 111 is a control circuit that individually controls on / off of the blanking electrode of the blanker array BA, and the LAU control circuit 112 is a control circuit that controls the electro-optical characteristics (focal length) of the lens array unit LAU. .
[0047]
The D_STIG control circuit 113 controls the dynamic stig coil 508 to control the astigmatism of the reduction electron optical system 504. The D_FOCUS control circuit 114 controls the dynamic focus coil 507 to focus on the reduction electron optical system 504. A deflection control circuit 115 controls a deflector 506, and an optical characteristic control circuit 516 adjusts optical characteristics (magnification, distortion, rotational aberration, optical axis, etc.) of the reduction electron optical system 504. Control circuit.
[0048]
The stage drive control circuit 117 is a control circuit that controls the drive of the θ-Z stage 509 and controls the drive of the XY stage 510 in cooperation with the laser interferometer LIM that detects the position of the XY stage 10.
[0049]
The control system 120 controls the plurality of control circuits based on data read from the memory 121 in which information on a pattern to be drawn is stored. The control system 120 is controlled by a CPU 123 that controls the entire electron beam exposure apparatus via an interface 122.
[0050]
The exposure operation of the electron beam exposure apparatus of the present embodiment will be described with reference to FIG. The control system 120 instructs the deflection control circuit 115 based on the exposure control data provided from the memory 121, deflects the plurality of electron beams by the deflector 506, and instructs the BA control circuit 111 to deflect the wafer 505. The blanking electrodes of the blanker array BA are individually turned on / off according to the pattern to be drawn. At this time, the XY stage 511 is continuously moving in the y direction, and the deflector 506 deflects the plurality of electron beams so that the plurality of electron beams follow the movement of the XY stage 511. Each electron beam scans and exposes a corresponding element exposure area (EF) on the wafer 505 as shown in FIG. Since the element exposure area (EF) of each electron beam is set to be two-dimensionally adjacent, as a result, a subfield (SF) composed of a plurality of element exposure areas (EF) that are simultaneously exposed is formed. Exposed.
[0051]
After the exposure of one subfield (SF1) is completed, the control system 120 instructs the deflection control circuit 115 to expose the next subfield (SF2), and the deflector 506 causes the stage scanning direction (y) to be exposed. A plurality of electron beams are deflected in a direction (x direction) orthogonal to the direction (x direction). At this time, when the subfield is changed by the deflection, the aberration when each electron beam is reduced and projected through the reduction electron optical system 504 also changes. Accordingly, the control system 120 instructs the LAU control circuit 112, the D_STIG control circuit 113, and the D_FOCUS control circuit 114 to correct the changed aberration so that the lens array unit LAU, the dynamic stig coil 508, and the dynamic focus coil Adjust 507. Then, as described above, the subfield 2 (SF2) is exposed by exposing the corresponding element exposure area (EF) with each electron beam again.
[0052]
In this manner, the subfields (SF1 to SF6) are sequentially exposed as shown in FIG. As a result, on the wafer 505, a main field (MF) composed of subfields (SF1 to SF6) arranged in a direction (x direction) orthogonal to the stage scanning direction (y direction) is exposed.
[0053]
After exposing the main field 1 (MF1) shown in FIG. 10, the control system 120 instructs the deflection control circuit 115 to sequentially arrange a plurality of main fields (MF2, MF3, MF4...) Arranged in the stage scanning direction (y direction). The electron beam is deflected and exposed. As a result, as shown in FIG. 10, a pattern is drawn on the stripe (STRIPE1) composed of the main fields (MF2, MF3, MF4...). Then, the control system 120 causes the XY stage 510 to step in the x direction, and exposes the next stripe (STRIPE2).
[0054]
Next, an embodiment of a device production method using the above-described electron beam exposure apparatus will be described.
[0055]
FIG. 11 is a diagram showing a flow of manufacturing micro devices (semiconductor chips such as ICs and LSIs, liquid crystal panels, CCDs, thin-film magnetic heads, micro machines, etc.). In step 1 (circuit design), the circuit of the semiconductor device is designed. In step 2 (exposure control data creation), exposure control data of the exposure apparatus is created based on the designed circuit pattern. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the exposure apparatus and the wafer to which the prepared exposure control data has been input. The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). including. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).
[0056]
FIG. 12 is a diagram showing a detailed flow of the wafer process of FIG. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. Step 14 (ion implantation) implants ions into the wafer. In step 15 (resist processing), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern is printed on the wafer by exposure using the above-described exposure apparatus. Step 17 (development) develops the exposed wafer. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist removal), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.
[0057]
By using the manufacturing method of the present embodiment, it is possible to manufacture a highly integrated semiconductor device, which was conventionally difficult to manufacture, at low cost.
[0058]
[Second embodiment]
This embodiment provides a specific example in which a solid member and an adhesive for bonding the solid member to the upper electrode substrate and the lower electrode substrate are used as the connecting portion 2 in the first embodiment. FIG. 13 is a sectional view schematically showing the structure of the multi-charged beam lens according to the second embodiment of the present invention.
[0059]
This multi-charged beam lens 600 has a structure in which three electrode substrates 1a, 1b, and 1c are arranged via an insulator 5, as in the first embodiment. Grooves (positioning portions) 4a, 4b, 4c for assembling are formed on the three electrode substrates 1a, 1b, 1c, respectively, and the insulator 5 is arranged between these grooves 4a, 4b, 4c. Accordingly, the three electrode substrates 1a, 1b, and 1c are positioned with respect to each other. The same potential is applied to the upper electrode substrate 1a and the lower electrode substrate 1c among the upper electrode substrate 1a, the intermediate electrode substrate 1b, and the lower electrode substrate 1c. As shown in FIG. 13, the intermediate electrode substrate 1b is typically given a negative potential with respect to the potentials of the upper electrode substrate 1a and the lower electrode substrate 1c.
[0060]
In this embodiment, the multi-charged beam lens 600 is assembled by connecting the upper electrode substrate 1a and the lower electrode substrate 1c to which the same potential is applied by a solid member 2b via an adhesive 2a. By connecting the upper electrode substrate 1a and the lower electrode substrate 1b to which the same potential is applied by a connecting portion (adhesive 2a, solid member 2b), the problem of dielectric breakdown in a member for assembling the electrode substrate electrodes 1a to 1c can be solved. Can be solved.
[0061]
Next, a method for manufacturing the multi-charged beam lens 600 shown in FIG. 13 will be described. First, a method of manufacturing the electrode substrates 1a, 1b, and 1c is the same as the method described in the first embodiment with reference to FIG.
[0062]
The assembling of the electrode substrates 1a, 1b, 1c can be performed as follows. First, the insulators 5 are arranged between the groove 4a of the upper electrode substrate 1a and the groove 4b of the intermediate electrode substrate 1b and between the groove 4b of the intermediate electrode substrate 1b and the groove 4c of the lower electrode substrate 1c. Thereafter, the upper electrode 1a and the lower electrode 1c to which the same potential can be applied are connected by the solid member 2b via the adhesive 2a.
[0063]
In the multi-charged beam lens 600 shown in FIG. 13, as in the first embodiment, the upper electrode substrate 1a and the lower electrode substrate 1c are provided, and the electron beam is applied by applying a negative voltage to the intermediate electrode substrate 1b. And the like, a lens action can be obtained for the charged beam. Here, when a conductive material is used as the adhesive 2a and the solid member 2b as the connecting portion, the conductor may be connected to only one of the upper electrode substrate 1a and the lower electrode substrate 1c, so that the wiring is simplified. Can be
[0064]
As described above, by connecting the upper electrode substrate 1a and the lower electrode substrate 1c using the solid member 2b, when the distance between the substrates 1a and 1b is large (for example, to the extent that it is difficult to adhere only with the adhesive) Even in the case of large size), both substrates 1a and 1b can be easily connected.
[0065]
FIG. 13 shows an example in which a multi-charged beam lens is constituted by three electrode substrates. However, the number of electrode substrates is not limited to three, and may be another number. FIG. 14 is a view showing an example of such a multi-charged beam lens composed of five electrode substrates 1a to 1e in which openings 3a to 3e and grooves 4a to 4e are formed, respectively. In the multi-charged beam lens 700 shown in FIG. 14, the upper electrode substrate 1a and the lower electrode substrate 1e are connected by a solid member 2b via an adhesive 2a, and are disposed between the upper electrode substrate 1a and the lower electrode substrate 1e. The other electrode substrates 1b, 1c, and 1d are arranged so as not to adhere to the upper electrode substrate 1a, the lower electrode substrate 1e, the adhesive 2a, and the solid member 2b. The five electrode substrates 1a to 1e are positioned with respect to each other by arranging the insulator 5 between the grooves 4a to 4e formed respectively.
[0066]
The multi-charged beam lens exemplarily described here can also be applied to a charged beam exposure apparatus such as the electron beam exposure apparatus exemplarily shown in FIG. 3 similarly to the first embodiment. Such a charged beam exposure apparatus is suitable for manufacturing devices such as semiconductor devices.
[0067]
[Third Embodiment]
This embodiment provides a specific example in which three or more electrode substrates are connected by a connecting member. FIG. 15 is a sectional view schematically showing the structure of the multi-charged beam lens according to the third embodiment of the present invention. The multi-charged beam lens 800 shown in FIG. 15 includes five first to fifth electrode substrates 1a to 1e having openings 3a to 3e and grooves 4a to 4e, respectively. Here, as shown in FIG. 15, the same potential is applied to the first electrode (upper electrode) 1a, the third electrode 1c, and the fifth electrode (lower electrode) 1e, and the second electrode 1b and the fourth electrode 1d. To the first electrode (upper electrode) 1a, the third electrode 1c, and the fifth electrode (lower electrode) 1e, a negative potential can be applied. Note that the potentials applied to the second electrode 1b and the fourth electrode 1d may be the same or different.
[0068]
The multi-charged beam lens 800 shown in FIG. 15 has a function equivalent to a structure in which the multi-charged beam lens 100 as shown in FIG.
[0069]
The first electrode (upper electrode) 1a, third electrode 1c, and fifth electrode (lower electrode) 1e to which the same potential is applied are connected by a solid member 2b via an adhesive 2a. Here, instead of such a connection method, a structure in which only an adhesive is used as a connection portion can be adopted. A first electrode (upper electrode) 1a, a third electrode 1c, and a fifth electrode (lower electrode) 1e to which the same potential is applied are connected by a connecting portion to assemble the first to fifth electrodes 1a to 1e. The problem of dielectric breakdown in the member can be solved.
[0070]
Next, a method for manufacturing the multi-charged beam lens 800 shown in FIG. 15 will be described. First, a method of manufacturing the electrode substrates 1a to 1e is the same as the method described in the first embodiment with reference to FIG.
[0071]
The assembly of the electrode substrates 1a to 1e can be performed as follows. First, between the groove 4a of the first substrate 1a and the groove 4b of the second electrode substrate 1b, between the groove 4b of the second electrode substrate 1b and the groove 4c of the third electrode substrate 1c, and the groove 4c of the third substrate 1c. The insulator 5 is arranged between the groove 4d of the fourth electrode substrate 1d and the groove 4d of the fourth electrode substrate 1d and the groove 4e of the fifth electrode substrate 1e. After that, the first electrode 1a, the third electrode 1c, and the fifth electrode 1e to which the same potential can be given are connected by the solid member 2b via the adhesive 2a.
[0072]
In the multi-charged beam lens 800 shown in FIG. 15, the first electrode 1a, the third electrode 1c, and the fifth electrode 1e are grounded, and a negative voltage is applied to the second electrode 1b and the fourth electrode 1d. And the like, a lens action can be obtained for the charged beam. Here, in the case where a conductive material is used as the adhesive 2a and the solid member 2b as the connecting portion, a conductive wire may be connected to only one of the first electrode 1a, the third electrode 1c, and the fifth electrode 1e. As a result, the wiring can be simplified.
[0073]
Here, the configuration of the two-stage multi-charged beam lens has been described as an example. However, it is obvious that the number of repetitions of the structure can be increased, and it is necessary to manufacture a multi-charged beam lens having three or more structures. You can also.
[0074]
Further, in this embodiment, an example in which the one-stage multi-charged beam lens is constituted by three electrode substrates (however, the electrode substrate is shared between the two) has been described. The beam lens may be composed of electrode substrates other than three.
[0075]
The multi-charged beam lens exemplarily described here can also be applied to a charged beam exposure apparatus such as the electron beam exposure apparatus exemplarily shown in FIG. 3 similarly to the first embodiment. Such a charged beam exposure apparatus is suitable for manufacturing devices such as semiconductor devices.
[0076]
【The invention's effect】
According to the present invention, for example, the problem of dielectric breakdown in a member for assembling a plurality of electrode substrates can be solved.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating a structure of a multi-charged beam lens according to a first embodiment of the present invention.
FIG. 2 is a view for explaining a method of manufacturing each electrode substrate constituting the multi-charged beam lens.
FIG. 3 is a diagram showing a configuration of a multi-charged beam exposure apparatus.
FIG. 4 is a diagram illustrating details of an element electron optical system array.
FIG. 5 is a diagram illustrating details of a blanker array (BA) in FIG. 4;
FIG. 6 is a diagram illustrating details of a first electron lens array (LA1) and a third electron lens array (LA3) of FIG. 4;
FIG. 7 is a diagram illustrating details of a second electron lens array (LA2) and a fourth electron lens array (LA4) of FIG.
FIG. 8 is a diagram for explaining an effect that an electron beam receives from a component electron optical system of a component electron optical system array 503;
9 is a diagram illustrating a configuration of a control system of the multi-charged beam exposure apparatus shown in FIG.
FIG. 10 is a view for explaining an exposure method using the multi-charged beam exposure apparatus shown in FIG.
FIG. 11 is a diagram illustrating the flow of manufacturing a micro device.
FIG. 12 is a diagram illustrating details of the wafer process of FIG. 11;
FIG. 13 is a diagram illustrating a structure of a multi-charged beam lens according to a second embodiment of the present invention.
FIG. 14 is a diagram illustrating a structure of a multi-charged beam lens according to a second embodiment of the present invention.
FIG. 15 is a diagram illustrating a structure of a multi-charged beam lens according to a third embodiment of the present invention.
FIG. 16 is a diagram illustrating a conventional charged beam lens.
[Explanation of symbols]
1a to 1e electrode substrate
2 Connecting part (adhesive etc.)
2a Adhesive
2b Solid member
3a-3e lens aperture
4a-4e Groove for assembly
5 Insulator
6 Silicon wafer
7 Mask
8 Conductor film

Claims (1)

A multi-charged beam lens,
At least three electrode substrates each having a plurality of openings for passing a charged beam;
A connecting portion that connects at least two electrode substrates to which a common potential is applied among the at least three electrode substrates;
Wherein the connecting portion is arranged so as not to come into contact with an electrode substrate to which a potential different from the common potential is applied, of the at least three electrode substrates.

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