JP4648087B2 - Deflector fabrication method, charged particle beam exposure apparatus, and device manufacturing method - Google Patents

Description

  The present invention relates to a charged particle beam exposure apparatus such as an electron beam exposure apparatus and an ion beam exposure apparatus mainly used for exposure of a semiconductor integrated circuit or the like. In particular, the present invention relates to a deflector used in a charged particle beam exposure apparatus that performs pattern drawing using a plurality of charged particle beams, and a deflector manufacturing method.

  In the production of semiconductor devices, the electron beam exposure technique has been spotlighted as a promising candidate for lithography that enables fine pattern exposure of 0.1 μm or less, and there are several methods. For example, there is a variable rectangular beam method that draws a pattern by so-called one-stroke drawing. However, this has a low throughput and has many problems as an exposure machine for mass production. In order to improve the throughput, a figure batch exposure method has been proposed in which a pattern formed on a stencil mask is reduced and transferred. This method is advantageous for simple patterns with many repetitions, but random patterns such as a logic wiring layer have many problems in terms of throughput, and greatly impede productivity improvement in practical use.

  In contrast, a multi-beam system that simultaneously draws a pattern with multiple electron beams without using a mask has been proposed, which eliminates the need for physical mask fabrication and replacement, and has many advantages for practical use. I have.

“Yasuda Hiroshi: Applied Physics 69, 1135 (1994)” is an example of a document disclosing a multi-electron beam exposure apparatus that performs pattern drawing using a plurality of electron beams. FIG. 9 is a sectional view of a blanking aperture array used in the multi-electron beam exposure apparatus. This blanking aperture array has openings and deflectors arranged in an array and can individually control irradiation of a plurality of electron beams. Here, in the figure, 51 indicates an opening, and 52 and 53 indicate first and second blanking electrodes, respectively. When the charged particle beam that has passed through the opening is irradiated onto the sample, the first and second blanking electrodes 52 and 53 are used.
When a ground potential signal is applied to and cut off, positive and negative potential signals are simultaneously applied to the first and second blanking electrodes.

  In the prior art, as a document disclosing a deflector that deflects an electron beam by applying an electric field to the electron beam and a manufacturing method thereof, Japanese Patent Laid-Open Nos. 11-40093 (Patent Document 1) and 2001-307990 ( There is a patent document 2). The deflector described in Patent Document 1 is formed by laminating a plurality of substrates through an insulator, and is opened in parallel with a beam passage hole for passing an electron beam, and a predetermined voltage is applied to the plurality of substrates. Is applied to deflect the electron beam passing through the beam passage hole.

The deflector described in Patent Document 2 has a deflection electrode, a ground electrode, a deflection pad, a ground electrode pad, and an aperture (an opening through which electrons pass) on the same substrate, and further includes the deflection electrode pad and the ground electrode pad. Is made shorter than the deflection electrode and the ground electrode, and a voltage is applied to the deflection electrode pad electrically connected to the deflection electrode, thereby deflecting the electron beam passing through the aperture.
JP-A-11-40093 JP 2001-307990 A “Hiroshi Yasuda: Applied Physics 69, 1135 (1994)”

  The method of manufacturing the electron beam deflector disclosed in Patent Document 1 described above can easily make the deflection electrode and the electron beam passage opening long, and thus has an advantage that the electron beam can be sufficiently deflected. However, it is difficult to produce a deflector for deflecting multiple electron beams.

  Furthermore, the device manufacturing method in which the electron deflectors disclosed in Patent Document 2 described above are arrayed includes an electron beam passage, a deflection electrode, a ground electrode, a deflection electrode pad, a ground electrode pad, a deflection electrode, and a ground electrode. Since the electrically coupled wiring layers are formed on the same substrate, it is difficult to form all elements for independently deflecting multiple electron beams because of complicated processes.

The present invention, as one object to provide ease in terms of the preferred deflector of a manufacturing method of manufacturing a deflector.

  A first aspect of the present invention relates to a manufacturing method of a deflector that deflects a plurality of charged particle beams, the manufacturing method including a plurality of wirings, a first alignment mark, a plurality of reinforcing bumps on a first substrate, A plurality of stopper bumps and a plurality of electrode bumps respectively connected to the plurality of wirings are provided, and a second alignment mark, a plurality of reinforcing pads, a plurality of stopper pads, and the charged particle beam are deflected on a second substrate. A plurality of deflection electrodes and a plurality of electrode pads respectively connected to the plurality of deflection electrodes, and having a predetermined height lower than the height of the plurality of electrode bumps and the height of the plurality of reinforcement bumps. And having an aspect ratio smaller than the aspect ratio of each of the plurality of electrode bumps and the aspect ratio of each of the plurality of reinforcing bumps. The plurality of stopper bumps are deformed to align the first substrate and the second substrate using the first alignment mark and the second alignment mark, and the stopper bump and the stopper pad are The first substrate and the second substrate are pressed against each other until they come into contact with each other, and the electrode bumps and the electrode pads, and the reinforcing bumps and the reinforcing pads are bonded at room temperature.
  A second aspect of the present invention relates to a charged particle beam exposure apparatus, and the charged particle beam exposure apparatus includes a deflector manufactured by the manufacturing method.
  A third aspect of the present invention relates to a device manufacturing method, wherein the device manufacturing method develops the exposure target exposed in the step, the step of exposing the exposure target using the charged particle beam exposure apparatus. The process of carrying out.

ADVANTAGE OF THE INVENTION According to this invention , the manufacturing method of a deflector advantageous at the point of the ease of manufacture of a deflector can be provided .

  In a preferred embodiment of the deflector according to the present invention, a plurality of through-holes through which a charged beam passes, a wiring bump electrically connected to the electrode bump, and a wiring electrically connected to the electrode bump are formed on a wiring board as a first board. An external control electrode electrically connected at the end of the wiring, a reinforcing bump for reinforcing the bonding strength and an alignment mark which are electrically insulated, and a charged beam passing through the electrode substrate which is the second substrate A plurality of through holes, and an electrode pair comprising a first deflection electrode and a second deflection electrode at opposite positions on both side walls of each through hole in order to control deflection of the trajectory of the charged beam passing through the through hole. A deflection electrode having electrode, an electrode pad electrically connected to the deflection electrode, a reinforcement pad for reinforcing bonding strength that is electrically insulated, and an alignment mark, and both the first substrate and the second substrate. Clean the substrate surface After the cleaning, the two substrates are opposed to each other and aligned using the alignment marks, and a load is applied from both sides of the two substrates, and the electrode bump, the electrode pad, and the reinforcement are applied by applying the load. The bumps and the reinforcing pad are each bonded at room temperature to integrate the both substrates.

  Another preferred embodiment of the deflector according to the present invention includes a plurality of through holes through which a charged beam passes through the first substrate substrate, electrode bumps for electrical bonding, wiring electrically connected to the electrode bumps, An external control electrode that is electrically connected at the end of the wiring, a reinforcing bump that is electrically insulated to reinforce the bonding strength, a stopper bump that acts as a stopper during bonding, and an alignment mark are provided on the second substrate. A plurality of through-holes through which the charged beam passes, and a first deflection electrode and a second deflection electrode at opposite positions on both side walls of each through-hole in order to control deflection of the trajectory of the charged beam passing through the through-hole A deflection electrode having a pair of electrodes, an electrode pad electrically connected to the deflection electrode, a reinforcement pad for reinforcing bonding strength that is electrically insulated, and a stopper that contacts the stopper bump at the time of bonding And cleaning the surfaces of both the first substrate and the second substrate, and after the cleaning, align the two substrates opposite to each other using the alignment mark, A load is applied from both sides of the two substrates until the stopper bump and the stopper pad come into contact with each other, and the electrode bump and the electrode pad and the reinforcing bump and the reinforcing pad are bonded at room temperature by applying the load. The two substrates are integrated with each other.

The area of the reinforcing bump per plane is equal to or larger than the area of the electrode bump per plane, preferably 100 [μm ² ] or more and 1 [mm ² ] or less. The two substrates are integrated with each other.

  The area of the stopper bump on the plane is larger than the area of the electrode bump and the reinforcing bump on the plane. Preferably, the total area of the stopper bump on the plane is the electrode bump and the plane on the plane. The two substrates are integrated with 20% or more of the total area of the reinforcing bumps. The height of the stopper bump is preferably lower than the height of the electrode bump and the height of the reinforcing bump.

  The bump and the pad are made of a metal material having plastic deformability, preferably a metal material having a face-centered cubic crystal, and are Au, Cu, or Al.

  The bump and the pad are made of a metal material having plastic deformability, preferably a metal material having a low melting point, and are In or Sn.

  A preferred embodiment of the deflector manufacturing method according to the present invention is that a wiring substrate as a first substrate is electrically connected to a plurality of through holes through which a charged beam passes, electrode bumps for electrical bonding, and the electrode bumps. Wiring, external control electrodes that are electrically connected at the end of the wiring, reinforcing bumps that are electrically insulated to reinforce the bonding strength, stopper bumps that act as stoppers during bonding, and alignment marks. A plurality of through holes through which a charged beam passes through the electrode substrate, and a first deflection at opposite positions on both side walls of each through hole to control deflection of the trajectory of the charged beam through the through hole. A deflection electrode having an electrode pair consisting of an electrode and a second deflection electrode, an electrode pad electrically connected to the deflection electrode, a reinforcing pad for reinforcing joint strength that is electrically insulated, and A stopper pad and an alignment mark that contact the bumps are provided, and both the substrate surfaces of the wiring substrate and the electrode substrate are cleaned, and after the cleaning, the substrates are opposed to each other and aligned using the alignment mark, By applying a load from both sides of the two substrates until the stopper bump and the stopper pad are in contact with each other and abutting each other, and by applying the load, the electrode bump and the electrode pad and the reinforcing bump and the reinforcing pad are joined at room temperature The two substrates are integrated.

  The stopper bump is adjusted in advance to a predetermined height by crushing the bump before the room temperature bonding. The cleaning can be performed by impact with ions or neutralized ions (neutral particles).

  1, FIG. 2, FIG. 3 and FIG. 4 are diagrams showing the features of the present invention well. In these drawings, 1 is a first Si substrate (wiring substrate), 2 is a Si oxide film made of an insulator formed on the first Si substrate 1, and 3 penetrates the first Si substrate 1. It is an electron beam passage opening formed by drilling. Reference numeral 4 denotes a shield electrode made of a conductor formed on the inner wall of the electron beam passage opening 3 to prevent charging, and reference numeral 5 denotes an electrode bump made of Au formed on the first Si substrate. Reference numeral 6 denotes a multilayer wiring circuit formed on the first Si substrate, which is electrically connected to the individual electrode bumps 5 on a one-to-one basis. 7 is a reinforcing bump made of Au disposed around the electrode bump 5, and 9 and 18 are alignment marks for aligning the substrates when the first Si substrate and the second Si substrate are joined at room temperature. .

  11 is a second Si substrate (electrode substrate), 12 is an Si oxide film made of an insulator formed on both surfaces of the second Si substrate 11, and 13 is a through hole formed in the second Si substrate. It is the formed electron beam passage opening. Denoted by 14 is a deflecting electrode provided independently on both side walls of the electron beam passage opening 13 and having an electrode pair for deflecting the electron beam, and 15 is electrically coupled with each deflecting electrode 14 independently. It is an electrode pad made of Au. Reference numeral 16 denotes a reinforcing pad made of Au for further strengthening the bonding strength when bonding both the Si substrates 1 and 11, and 19 denotes both sides of the both Si substrates when bonding both the Si substrates 1 and 11 at room temperature. The applied load applied from.

  In the above configuration, the first Si substrate 1 is formed by forming an Si oxide film 2 as an insulator on one surface by sputtering, and further forming a three-layer Al film on the Si oxide film 2 using a semiconductor process. A multilayer wiring circuit 6 having wiring (Al wiring of each layer is electrically insulated by the Si oxide film 2) is formed, a through hole is formed on the multilayer wiring circuit 6, and electricity is passed through the through hole. The electrode bumps 5 to be bonded together were formed by Au plating. Each of the electrode bumps 5 is electrically connected to each of the external control electrodes 10 via the multilayer wiring circuit 6 on a one-to-one basis. That is, the electrode bump 5 and the external control electrode 10 are each independently a multilayer wiring circuit 6 (the same number of multilayer wiring circuits 6 as the number of electrode bumps 5 are required, but only two wirings are shown in FIG. The remaining wiring is not shown in the figure). Further, the reinforcing bumps 7 made of Au were formed by Au plating around the electrode bumps 5 of the Si substrate 1. The external control electrode 10 is electrically coupled to the multilayer wiring circuit 6 through a through hole formed immediately above the end of the multilayer wiring circuit 6, and is produced by Au plating.

  And the alignment mark 9 was formed in the outer peripheral position by Au thin film film-forming. The electrode bump 5, the reinforcing bump 7 and the external control electrode 10 were formed simultaneously by a photoresist process and an Au plating process. Therefore, in the Au plating step, the bump heights of the electrode bump 5, the reinforcing bump 7 and the external control electrode 10 are the same, and are about 15 μm. Thereafter, the back surface of the first Si substrate 1 was thinned by polishing to a thickness of 200 μm. Further, a through-hole serving as an electron beam passage port 3 was formed in the first Si substrate 1 processed to a thickness of 200 μm using a photoresist process and an ICPRIE etching technique. The electron beam passage openings 3 have a rectangular shape of 60 μm × 30 μm, and are arranged in a matrix of 32 × 32 (schematically illustrated in a 6 × 6 matrix in FIG. 2). Thereafter, a shield electrode 4 made of a conductor Au was formed on the inner wall of the electron beam passage port 3 to prevent charging. The first Si substrate 1 that has undergone the above steps is forced to have the Si oxide film 2 only on one side by thinning polishing, and thus the surface having the Si oxide film 2 is curved in a convex shape. That is, there is a state in which residual stress is generated.

  On the other hand, the second Si substrate 11 is formed with an Si oxide film 12 that is an insulator on both surfaces, and through holes (not shown) are first formed in the production area of the deflection electrode 14 using a photoresist process and an ICPRIE etching process. The deflection electrode 14 having an electrode pair was formed by filling the through hole with Cu as a conductor by a Cu plating process. Thereafter, a through hole to be the electron beam passage port 13 was formed by using a photoresist process and an ICPRIE etching process. Here, the electron beam passage apertures 13 are 50 μm × 30 μm rectangles and are arranged in a 32 × 32 matrix. In the above process, the deflection electrode 14 was formed on both side walls of the electron beam passage opening 13. Then, the electrode pads 15 electrically connected to the individual deflection electrodes 14 in the vicinity of the deflection electrodes 14 using the photoresist process and the film formation process are respectively connected to the reinforcement pads 16 at the peripheral positions of the electrode pads 15. And the alignment mark 18 were formed by Au thin film deposition.

  The first Si substrate 1 and the second Si substrate 11 that have undergone the above steps are introduced into a reduced pressure Ar atmosphere, and both bonded surfaces are cleaned by Ar ion sputtering, and then both the Si substrates in the atmosphere. And the Si substrate 1 and the Si substrate 11 are aligned using the respective alignment marks 9 and 18, that is, the electrode bump 5 and the electrode pad 15 and the reinforcing bump 7 and the reinforcing pad 16 overlap each other. In this aligned state, as shown in FIG. 4, an applied load 19 is applied to both the Si substrates 1 and 11, and the first Si substrate 1 and the second Si substrate 11 are bonded at room temperature at room temperature. did.

In this embodiment, the electrode bumps 5 and the reinforcing bumps 7 have the same shape, a diameter of 19 μm, and a height of 15 μm. These bumps are formed by batch Au plating. Preferably, the area on the plane per reinforcing bump is equal to or greater than the area on the plane per electrode bump, and is preferably 100 [μm ² ] or more and 1 [mm ² ] or less. . Since the electrode bump 5 is formed by plating on the wiring, a constricted portion is inevitably generated at a lower portion of the bump. For this reason, when it considers from an intensity | strength, an electrode bump smaller than 6 micrometers square cannot be formed. Therefore, the area of the electrode bump 5 in the plane is preferably 36 [μm ² ] (6 μm square) or more and 2500 [μm ² ] (50 μm square) or less.

  The first Si substrate 1 is curved and deformed due to residual stress because the Si oxide film is removed by single-side polishing as described above. For this reason, after the second Si substrate 11 that has not been bent and the first Si substrate 1 that has been bent and deformed at room temperature, there was a concern about the peeling of the bonding portion due to the restoring force of the bending deformation. Without doing so, the electrode bumps 5 and the electrode pads 15 and the reinforcing bumps 7 and the reinforcing pads 16 at the joints were firmly joined.

  In this embodiment, the electron beam passage openings 3 and 13 provided in the first Si substrate 1 and the second Si substrate 11 are arranged in a 32 × 32 (= 1024) square matrix. The deflection electrodes 14 for deflecting the electron beam passing through the electron beam passage port 13 of the second Si substrate 11 are 2048 on both side walls of the electron beam passage port 13, and the deflection electrode 14 is in the vicinity of the deflection electrode 14. There are provided 2048 electrode pads 15 that are electrically connected to the deflection electrode 14, and 380 reinforcing pads 16 for reinforcing the strength arranged around the electrode pads 15, respectively, and the first Si substrate. One electrode bump 5 is arranged in the same number as 2048 pieces of the electrode pad 15 of the second Si substrate 11, and reinforcing bumps 7 are arranged in the same number 380 as the reinforcing pads 16. Then, by applying an applied load of 50 [kg] from both sides of both Si substrates, the electrode bumps 5 and the electrode pads 15 and the reinforcing bumps 7 and the reinforcing pads 16 were joined, respectively. The bonding stress between the bump and the pad after bonding was about 130 [Mpa] and was firmly bonded. The bonding stress was larger than the maximum peel stress 32 [Mpa] between the pair of bumps and pads (the maximum peel stress was obtained by simulation). That is, by the above bonding method, the bonding portion between the electrode bump 5 and the electrode pad 15 was firmly bonded without peeling.

  A deflector manufactured by integrating the wiring substrate which is the first Si substrate 1 and the electrode substrate which is the second Si substrate 11 through the bonding process is attached to a measuring device provided in a vacuum apparatus, (Not shown) is guided to the electron beam passage openings 3 and 13, and when the same voltage (zero voltage) is applied from the external control electrode 10 to the deflection electrodes 14 on both walls of the arbitrary electron beam passage opening 13, the electron beam is Fluorescence (not shown) was emitted on the center of a fluorescent plate (not shown). When a voltage is applied from the external control electrode 10 to the deflection electrodes 14 on both side walls so as to be −5 [V] and +5 [V], respectively, the electron beam that has passed through the electron beam passage ports 3 and 13 is +5 It was confirmed that the light was greatly deflected to the side of the deflection electrode to which [V] was applied, and fluorescence was emitted at the corners of the fluorescent plate (not shown). Further, when the deflection of the electron beam passing through the electron beam passage port 13 was examined in the same manner as described above, the same electron beam deflection as described above was observed in all the electron beam passage ports 13. In other words, it was confirmed that it functions as a multi deflector.

  In the case of this embodiment, the deflection was confirmed using an electron beam, but a charged beam having a charge may be used, and there is no change as intended by the present invention.

  5, FIG. 6, FIG. 7 and FIG. 8 are diagrams showing the features of the present invention well. In these figures, 1 is a first Si substrate, 2 is a Si oxide film made of an insulator formed on the first Si substrate 1, and 3 is formed in the first Si substrate 1 by through holes. The electron beam passage opening. Reference numeral 4 denotes a shield electrode made of a conductor formed on the inner wall of the electron beam passage opening 3 to prevent charging, and reference numeral 5 denotes an electrode bump made of Au formed on the first Si substrate. 6 is a multilayer wiring circuit formed on the first Si substrate, and is electrically connected to each electrode bump 5 independently on a one-to-one basis, and 7 is a reinforcing bump made of Au arranged around the electrode bump 5. It is. Reference numeral 8 denotes a stopper bump having a function as a stopper when the first Si substrate 1 and the second Si substrate 11 are joined at room temperature, and reference numerals 9 and 18 denote the first Si substrate 1 and the second Si substrate 11 at room temperature. This is an alignment mark for aligning the substrates when bonding. 11 is a second Si substrate, 12 is a Si oxide film made of an insulator formed on both surfaces of the second Si substrate 11, and 13 is an electron formed in the second Si substrate 11 by drilling a through hole. It is a line passage entrance. Denoted at 14 is a deflecting electrode for independently deflecting the electron beam on both side walls of the electron beam passage opening 13, and 15 is an electrode made of Au that is electrically coupled to each of the deflecting electrodes 14 independently. It is a pad. Reference numeral 16 denotes a reinforcing pad made of Au for further strengthening the bonding strength when the two Si substrates 1 and 11 are bonded. Reference numeral 17 denotes when the first Si substrate 1 and the second Si substrate 11 are bonded at room temperature. This is a stopper pad made of Au that comes into contact with and comes into contact with the stopper bump 8. Reference numeral 19 denotes an applied load applied from both sides of the Si substrates 1 and 11 when they are bonded at room temperature.

  In the above configuration, the Si oxide film 2 as an insulator is formed on both surfaces of the first Si substrate 1 by sputtering film formation, and further, an Al wiring composed of three layers is formed on the Si oxide film 2 using a semiconductor process. A multilayer wiring circuit 6 (Al wiring of each layer is electrically insulated by the Si oxide film 2) is formed, and a through hole is formed on the multilayer wiring circuit 6, and is electrically coupled through the through hole. Electrode bumps 5 to be formed were respectively formed by Au plating. Each of the electrode bumps 5 is electrically connected to each of the external control electrodes 10 through the multilayer wiring circuit 6 on a one-to-one basis. That is, each of the multilayer wiring circuits 6 (the number of electrode bumps 5 and the same number of multilayer wiring circuits 6 are necessary. In FIG. 6, only two wirings are shown, and the remaining wirings are not shown. Are electrically coupled.

  Further, on the first Si substrate 1, reinforcing bumps 7 and stopper bumps 8 made of Au were formed on the peripheral positions of the electrode bumps 5 by Au plating, respectively. The external control electrode 10 is electrically coupled to the multilayer wiring circuit 6 through a through hole formed immediately above the end of the multilayer wiring circuit 6, and is produced by Au plating. And the alignment mark 9 was formed in the outer peripheral position by Au thin film film-forming. The electrode bump 5, the reinforcing bump 7 and the external control electrode 10 were formed simultaneously by a photoresist process and an Au plating process. Accordingly, in the Au plating step, the bump heights of the electrode bump 5, the reinforcing bump 7, the stopper bump 8 and the external control electrode 10 are the same, and are about 15 μm. Thereafter, the back surface of the first Si substrate 1 was thinned by polishing to a thickness of 200 μm. Further, a through-hole serving as an electron beam passage port 3 was formed in the first Si substrate 1 processed to a thickness of 200 μm using a photoresist process and an ICPRIE etching technique. The electron beam passage openings 3 have a rectangular shape of 60 μm × 30 μm, and are arranged in a matrix of 32 × 32 (in FIG. 6, schematically shown in a matrix of 6 × 6). Then, a shield electrode 4 made of a conductor Au was formed on the inner wall of the electron beam passage port 3 by electroless plating to prevent charging. The first Si substrate 1 that has undergone the above steps is forced to have the Si oxide film 2 only on one side by the thinning polishing, and thus the surface having the Si oxide film 2 is curved in a convex shape. That is, it is a state where residual stress is generated.

  On the other hand, on the second Si substrate 11, an Si oxide film 12 made of an insulator is formed on both surfaces, and a through hole (not shown) is first formed at a location where the deflection electrode 14 is manufactured using a photoresist process and an ICPRIE etching process. And the deflection electrode 14 which has an electrode pair was formed by filling this through-hole with Cu which is a conductor by Cu plating process. Thereafter, a through hole to be the electron beam passage port 13 was formed by using a photoresist process and an ICPRIE etching process. Here, the electron beam through-holes 13 have a rectangular shape of 50 μm × 30 μm and are arranged in a 32 × 32 matrix. In the above process, the deflection electrode 14 was formed on both walls of the electron beam passage opening 13. Then, an electrode pad 15 electrically connected to each of the deflection electrodes 14 is formed in the vicinity of the deflection electrode 14 by using a photoresist process and a film formation process, and the peripheral position of the electrode pad 15 is formed. The reinforcing pad 16, the stopper pad 17, and the alignment mark 18 were formed by Au thin film formation.

Next, a load (not shown) is applied to the stopper bump 8 of the first Si substrate 1 in advance via a pressing plate (not shown) in contact with the stopper bump 8, and a height of about 8 μm is applied by the load application. This was plastically deformed. Bumps that were previously plastically deformed by the above method were used as stopper bumps 8. Due to the plastic deformation, the hardness of the stopper bump 8 rapidly hardened from the initial Vickers hardness of 45 to Vickers hardness of 80. Due to the curing, the stopper bump 8 is less likely to be plastically deformed, and is suitable as a stopper. The stopper bumps 8 are for deforming the electrode bumps 5 to a desired height, and for suppressing the excessive deformation. Therefore, when the applied load 19 is applied, it is necessary to make the stress acting on the stopper bump 8 smaller than the stress acting on the electrode bump 5 and the reinforcing bump 7. Therefore, the area of the stopper bump 8 in the plane needs to be larger than the area of the electrode bump 5 and the reinforcing bump 7 in the plane. By increasing the area of the stopper bump 8 in the plane, the applied stress acting on the stopper bump 8 is reduced. Therefore, at the time of normal temperature bonding, the stopper bump 8 is deformed with a small deformation amount and functions as a stopper. Preferably, the total area of the stopper bumps 8 on the plane is desirably 20% or more of the total area of the electrode bumps 5 and the reinforcing bumps 7 (in the experiments by the inventors, the areas of the electrode bumps 5 and the reinforcing bumps 7 are each 0.00%). 739 [mm ² ], 0.134 [mm ² ], and the area of one stopper bump 8 is 0.216 [mm ² ], that is, the total area of the stopper bump 8 is the electrode bump 5 and the reinforcing bump. 7 was 20% or more of the sum of the total areas of each of the bumps and pads, it was firmly bonded).

  The first Si substrate 1 and the second Si substrate 11 that have undergone the above steps are introduced into a reduced pressure Ar atmosphere, and both bonded surfaces are cleaned by Ar ion sputtering, and then both the Si substrates in the atmosphere. The first Si substrate 1 and the second Si substrate 11 are aligned using the respective alignment marks 9 and 18, that is, the electrode bump 5 and the electrode pad 15, the reinforcing bump 7 and the reinforcing pad 16 are aligned. In this aligned state, an applied load 19 is applied to both the Si substrates 1 and 11 as shown in FIG. 8, and the first Si substrate 1 and the second Si substrate are aligned. 11 was joined at room temperature at room temperature. When the applied load 19 is applied from both sides of the Si substrates and the applied load 19 is gradually increased during the room temperature bonding, the electrode bumps 5 and the electrode pads 15 and the reinforcing bumps 7 and the reinforcing pads 16 are first formed. Contact and gradually plastically deform. When the stopper bump 8 and the stopper pad 17 come into contact with each other and come into contact with each other, the compressive stress acting between the bump and the pad is abruptly reduced, so that the plastic deformation is extremely reduced. At this point, the applied load is removed. By applying the applied load by the above method, the electrode bumps 5 and the reinforcing bumps 7 could be plastically deformed to the same height as the stopper bumps 8. For this reason, it is possible to eliminate electrical interference, that is, electrical short-circuiting, with the adjacent electrode pad 15 due to excessive plastic deformation of the electrode bump 5 (that is, due to excessive crushing). Therefore, by setting the height of the stopper bump 8 to an arbitrary predetermined height by the above method, excessive plastic deformation of the electrode bump 5 can be prevented, and an electrical short circuit between adjacent electrode bumps 5 can be prevented. I can do it. When the aspect ratio (aspect ratio; bump height / bump diameter) of the stopper bump 8 is smaller than that of the electrode bump 5 and the reinforcing bump 7, the function as a stopper bump can be suitably achieved. According to the inventor's experiment, when the bump is pressed with an equivalent stress, the plastic deformability of the bump decreases as the aspect ratio decreases. By utilizing this phenomenon, a function as a stopper bump could be imparted by the above method.

  In this embodiment, the electrode bumps 5 and the reinforcing bumps 7 have the same shape, a diameter of 19 μm, a height of 15 μm, and are made of a metal material Au. (The electrode bump 5, the reinforcing bump 7 and the stopper bump 8 are formed by batch Au plating in the same process.) On the other hand, the stopper bump 8 is 120 μm square and the height is 7 μm in the plastic deformation process. Since it decreased, it became 8 μm.

  The first Si substrate 1 is curved and deformed due to internal stress because the Si oxide film is removed by single-side polishing for the reasons described above. For this reason, after room-temperature bonding of the second Si substrate 11 that is not curved and the first Si substrate 1 that is curved and deformed, the restoring force of the first Si substrate 1 that is curved and deformed causes Although there was concern about peeling, the electrode bump 5 and the electrode pad 15 and the reinforcing bump 7 and the reinforcing pad 16 were firmly bonded without peeling.

  In this embodiment, the electron beam passage openings 3 and 13 provided in the first Si substrate 1 and the second Si substrate 11 are arranged in a 32 × 32 (= 1024) square matrix. The number of deflection electrodes 14 for deflecting the electron beam passing through the electron beam passage port 13 of the second Si substrate 11 is 2048 on both side walls of the electron beam passage port 13, and the deflection electrode 14 is in the vicinity of the deflection electrode 14. There are 2048 electrode pads 15 electrically connected to the electrode 14, and 380 reinforcing pads 16 for reinforcing the strength arranged around the electrode pads 15, respectively. The same number of electrode bumps 5 on the Si substrate 1 as 2048 as the electrode pads 15 on the second Si substrate 11 and the same number of 380 reinforcement bumps 7 as the reinforcement pads 16 are arranged. Then, both Si substrates are pressed by applying an applied load 19 of 50 [kg] from both sides by the above-described method, so that the electrode bumps 5 and the electrode pads 15 and the reinforcing bumps 7 and the reinforcing pads 16 are joined at room temperature and integrated. did. The bonding stress between the bump and the pad after bonding was about 130 [Mpa] and was firmly bonded. The bonding stress was larger than the maximum peel stress 32 [Mpa] between the pair of bumps and pads (the maximum peel stress was obtained by simulation). That is, the electrode bumps 5 and the electrode pads 15 were firmly bonded without being separated by the above bonding method.

  In this embodiment, the electrode bump 5 and the electrode pad 15, the reinforcing bump 7 and the reinforcing pad 16, and the stopper bump 8 and the stopper pad 17 are made of Au, which is a metal material.

In the present embodiment, the bonding surface is cleaned by Ar ion bombardment. However, for example, ions obtained by neutralizing Ar ions, that is, neutral particles may be used. .
Furthermore, the bonding between the two substrates was performed at room temperature bonding at room temperature, and no thermal residual stress was generated by the bonding.

  A deflector manufactured by integrating the wiring substrate which is the first Si substrate 1 and the electrode substrate which is the second Si substrate 11 through the bonding process is attached to a measuring device provided in a vacuum apparatus, (Not shown) was guided to the electron beam passage ports 3 and 13, and the same voltage (zero voltage) was applied from the external control electrode 10 to the deflection electrodes 14 on both walls of the arbitrary electron beam passage port 13. At this time, the electron beam emitted fluorescence (not shown) on the central portion of the fluorescent plate (not shown). When a voltage is applied from the external control electrode 10 to the deflection electrodes 14 on both side walls so as to be −5 [V] and +5 [V], respectively, the electron beam that has passed through the electron beam passage ports 3 and 13 is +5 It was confirmed that the light was greatly deflected to the side of the deflection electrode to which [V] was applied, and fluorescence was emitted at the corners of the fluorescent plate (not shown). Further, when the deflection of the electron beam passing through the electron beam passage ports 3 and 13 was examined in the same manner as described above, the same deflection of the electron beam was observed at all the electron beam passage ports 3 and 13. . In other words, it was confirmed that it functions as a multi deflector.

  As described above, the present invention includes an electron beam passage opening, an electrode bump, a multilayer wiring circuit electrically coupled to the electrode bump, a reinforcing bump for reinforcing the bonding strength, and a stopper at the time of bonding. A stopper bump, which plays a role as an external control electrode, an external control electrode electrically connected to the multilayer wiring circuit, and an alignment mark are formed, respectively, and an electron beam passage opening, a deflection electrode, and the deflection electrode are electrically connected to the second substrate. An electrode pad bonded to the substrate, a reinforcing pad for reinforcing the bonding strength, a stopper pad that contacts the stopper bump at the time of bonding, and an alignment mark are formed, and then both substrates are aligned using the alignment mark. By applying a load from both sides, room temperature bonding is performed between the electrode bump and the electrode pad and the reinforcing bump and the reinforcing pad, respectively. Ri electrical coupling at the same time it is possible to obtain a bonding strength between the both substrates. For this reason, since it is possible to mainly form wiring on the first substrate and mainly deflecting electrodes on the second substrate, it is easy to produce a high-density matrix-like deflector.

  In addition, it has stopper bumps and stopper pads that function as stoppers, and it can avoid excessive crushing of electrode bumps due to excessive application of mutual pressing load during joining, thus preventing electrical short circuit to adjacent electrodes And the influence of variations in bump height can be avoided. Further, the bonding between the reinforcing bump and the reinforcing pad enables the inter-electrode bonding of the substrate having internal stress in advance without peeling. Further, by previously performing a non-functional process on the bumps, it is possible to avoid bonding between the bumps and pads that do not need to be bonded, and the non-functional bumps can be used as stopper bumps. .

Next, a semiconductor device manufacturing process using the exposure apparatus according to the above embodiment will be described. FIG. 10 is a diagram showing a flow of an entire manufacturing process of a semiconductor device. In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (EB data conversion), exposure control data for the exposure apparatus is created based on the designed circuit pattern.
On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer using lithography using the exposure apparatus and wafer to which the exposure control data has been input. The next step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, and is an assembly process (dicing, bonding), packaging process (chip encapsulation), etc. Process. In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. A semiconductor device is completed through these processes, and is shipped in Step 7.
The wafer process in step 4 includes the following steps. An oxidation step for oxidizing the surface of the wafer, a CVD step for forming an insulating film on the wafer surface, an electrode formation step for forming electrodes on the wafer by vapor deposition, an ion implantation step for implanting ions on the wafer, and applying a photosensitive agent to the wafer The resist processing step, the exposure step for printing and exposing the circuit pattern onto the wafer after the resist processing step by the above-described exposure apparatus, the development step for developing the wafer exposed in the exposure step, and the etching for removing portions other than the resist image developed in the development step Step, resist stripping step to remove resist that is no longer needed after etching. By repeating these steps, multiple circuit patterns are formed on the wafer.

It is sectional drawing which showed the state before integrating the 1st board | substrate and 2nd board | substrate in the deflector which concerns on Example 1 of this invention by normal temperature joining. It is A arrow directional view of FIG. It is a B arrow line view of FIG. It is sectional drawing which showed the state which integrated the 1st board | substrate and 2nd board | substrate in the deflector which concerns on Example 1 of this invention by normal temperature joining. It is sectional drawing which showed the state before integrating the 1st board | substrate and 2nd board | substrate in the deflector which concerns on Example 2 of this invention by normal temperature joining. It is C arrow line view of FIG. It is D arrow line view of FIG. It is sectional drawing which showed the state which integrated the 1st board | substrate and the 2nd board | substrate in the deflector which concerns on Example 2 of this invention by normal temperature joining. It is explanatory drawing of background art. It is a figure which shows the flow of the whole manufacturing process of a semiconductor device.

Explanation of symbols

  1: first Si substrate, 2: Si oxide film, 3: electron beam passage port, 4: shield electrode, 5: electrode bump, 6: multilayer wiring circuit, 7: reinforcement bump, 8: stopper bump, 9: alignment Mark: 10: External control electrode, 11: Second Si substrate, 12: Si oxide film, 13: Electron beam passage port, 14: Deflection electrode, 15: Electrode pad, 16: Reinforcing pad, 17: Stopper pad, 18 : Alignment mark, 19: applied load, 51: opening, 52: first blanking electrode, 53: second blanking electrode.

Claims (6)

In a method of manufacturing a deflector that deflects a plurality of charged particle beams ,
On the first substrate, a plurality of wirings, a first alignment mark, a plurality of reinforcing bumps, a plurality of stopper bumps, and a plurality of electrode bumps respectively connected to the plurality of wirings are provided.
A second substrate, a second alignment mark, a plurality of reinforcing pads, a plurality of stopper pads, a plurality of deflection electrodes for deflecting the charged particle beam, and a plurality of electrodes respectively connected to the plurality of deflection electrodes A pad,
The plurality of electrode bumps have a predetermined height lower than that of the plurality of reinforcing bumps, and are smaller than the aspect ratio of each of the plurality of electrode bumps and the aspect ratio of each of the plurality of reinforcing bumps. Applying a load to deform the plurality of stopper bumps so as to have an aspect ratio,
And said second substrate and the first substrate is aligned with said second alignment mark and the first alignment mark,
Against the stopper bump and said first substrate and said second substrate stopper until pad you contact with each other to each other, the electrode bump and the electrode pad, and the room temperature the reinforcing bump and the reinforcing pad respectively Joining ,
Work made wherein the. The method of preparation according to claim 1, wherein prior to alignment, the or the first substrate and the cleaning of the second substrate each bonding surface ions conducted by bombardment by neutral particles, it is characterized. Applying a load after forming the plurality of electrode bumps, the plurality of reinforcing bumps, and the plurality of stopper bumps on the first substrate in the same process so that they have the same height. The manufacturing method according to claim 1, wherein the deformation of the plurality of stopper bumps is performed. The plurality of electrode bumps, the plurality of reinforcing bumps, and the plurality of stopper bumps are formed of Au, Cu, Al, In, or Sn. 2. The manufacturing method according to item 1. It comprises a deflector which is manufactured by the manufacturing method according to any one of claims 1 to 4, the charged particle beam exposure apparatus characterized by. A device manufacturing method characterized by chromatic and performing exposure to the exposure target using a charged particle beam exposure apparatus according to claim 5, and a step of developing the exposed length of the exposure target in the step.

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