JPH04243118A - Charged particle exposure transmitting mask - Google Patents

Abstract

PURPOSE:To facilitate perfect electric continuity between an upper layer silicon plate and a support silicon plate and avoid a stray beam by a method wherein metal films which communication with the upper layer silicon plate and the support silicon plate electrically in second apertures are formed. CONSTITUTION:A mask pattern 5 is formed in an upper layer silicon plate 1 with a charged particle beam. First apertures 4a and 6a through which the charged particle beam is transmitted are formed in a support silicon plate 2 under the mask pattern 5. Second apertures 4b and 6b which reach the rear parts of the upper layer silicon plate 1 directly are formed in the support silicon plate 2 under the region where the mask pattern 5 is not formed. Conductive films 8 which communicate with the upper layer silicon plate 1 and the support silicon plate 2 electrically in the second apertures 4b and 6b are formed. With this constitution, charge-up of the upper layer silicon plate 1 is hardly created and a stray beam can be avoided.

Description

[Detailed description of the invention]

0001

[Field of Industrial Application] The present invention relates to a transmission mask for charged particle exposure having a desired pattern as an opening, and more specifically, it is made by bonding and bonding an upper layer Si plate and a support Si plate with a silicon oxide film sandwiched therebetween. The present invention relates to a transmission mask for structured charged particle exposure.

In recent years, with the increase in the density of integrated circuits, new exposure methods using charged particle beams such as electron beams and ion beams and X-rays have been considered in place of photolithography, which has been the mainstream for forming fine patterns for many years. and has come to be actually used. Charged particle beam exposure performs pattern formation using a charged particle beam. Formation using an electron beam is characterized by the fact that the beam itself can be narrowed down to several angstroms, allowing the formation of fine patterns on the order of microns or smaller.

However, since this exposure method is a so-called "one-stroke" exposure method, the finer the beam, the smaller the beam must be used for exposure, resulting in an extremely long exposure time. To solve this problem, a block exposure method was devised. This block exposure method will be described later.

[0004] It is said that the transmission mask used in these exposure methods is best formed using a Si plate in consideration of workability and strength. When using a Si plate, it is unreasonable to open each permeation hole by the thickness of the Si plate, and it is common to form the pattern area in the form of a membrane (thin film) and form the pattern on it. It is.

[0005]

[Prior Art] A membrane constituting a transmission mask has two
Although it is preferable to form the layer with a thickness of about 0 μm or less, it is difficult to control the thickness with a thickness of 20 μm or less. This control usually uses the crystallinity and impurity concentration dependence of the etching rate. That is, when performing Si etching with a KOH (potassium hydroxide) aqueous solution, the plane orientation of the Si plate is [100] and [1
11], there will be an etching rate difference of more than 30 times, while if the boron concentration of the Si plate is 1020 pieces/cm3 or more, the plane orientation of the Si plate will be [100] and [111].
] has substantially the same etching rate. Therefore, a wafer with a surface orientation of [100] is used, and the boron concentration is set to about 1020 in the portion that will become the stencil, and etching is performed. However, when boron ions are implanted, it is difficult to obtain a sufficient concentration range necessary to slow down the etching rate, and ion implantation is required for a long time in order to obtain a sufficient concentration range. On the other hand, when using diffusion to achieve a boron concentration of about 1020, it is difficult to control the depth of diffusion. Furthermore, there remains the problem of the strength of the transmission mask.

In order to solve these problems, the present inventors previously proposed a transmission mask having a bonded structure. This is at least the upper layer Si with a silicon oxide film in between.
It has a structure in which a plate and a supporting Si plate are bonded together, and the supporting Si
The stencil portion is formed by opening the plate. The structure and manufacturing method will be specifically described below with reference to the drawings.

11 and 12 are diagrams explaining a conventional transmission mask for charged particle exposure, FIG. 11 is a sectional view showing the structure of the conventional example, and FIG. 12 is a diagram explaining the manufacturing method of the conventional example. . In these figures, 101 is an upper layer Si plate, 102
103 is a silicon oxide film formed on the support Si plate 102; 104 is an upper layer Si plate 101
105 is the upper layer Si plate.
101 is an opening formed in the silicon oxide film 103, and 106 is an opening formed in the silicon oxide film 103.

Next, the manufacturing method will be explained. First, as shown in FIGS. 12(a) to 12(c), the film thickness is 50
An upper Si plate 101 having a thickness of approximately 0 μm and a support Si plate 102 having a thickness of approximately 500 μm on which a silicon oxide film 103 having a thickness of approximately 5 to 15 μm has been formed by thermal oxidation are bonded together by melting.

Next, as shown in FIG. 12(d), the thick film upper layer Si plate 101 is polished to a predetermined thickness (for example, 1
The film is cut down to a thickness of about 0 μm) and made into a thin film. Upper layer Si plate 1
Generally, it is preferable to reduce the thickness of 01 to 20 μm or less, because if it becomes thicker than that, the pattern to be exposed will be affected by the thickness of the mask.

Next, as shown in FIG. 12(e), RIE
A mask pattern 104 is formed by patterning the upper layer Si plate 101 by et al. Next, as shown in FIG. 12(f), the supporting Si plate 102 is anisotropically etched using a KOH aqueous solution or the like to form an opening 105. In this case, for example, if the upper layer Si plate 101 is 500 μm thick and the mask pattern 104 is 500 μm square, it is necessary to form an opening 105 in the upper layer Si plate 101 with a size of about 1200 μm square. This is because pattern shift occurs due to etching. Naturally, the support substrate 102 needs to have a plane orientation of [100], and the etching is performed on the silicon oxide film 103.
It can be stopped with.

By removing a portion of the silicon oxide film 103 under the mask pattern 104 through the opening 105, a transmission mask having a desired mask pattern 104 as shown in FIG. 11 can be obtained.

[0012] Since the openings are opened due to the difference in etching rate between each material, the patterning of the upper layer Si plate 101 reaches the silicon oxide film 103, and the patterning does not pass through the silicon oxide film 103. good.

[0013]

[Problems to be Solved by the Invention] In the conventional charged particle exposure transmission mask described above, the support Si plate 102 and the upper layer S
Since the i-plates 101 were completely insulated by the silicon oxide film 103, there was no problem while exposing the desired transmission hole pattern using a stepper, etc., but in order to improve the turnaround of mask creation, charging When attempting to expose with a particle beam, there was a problem in that the upper layer Si plate 101 was easily charged up.

Furthermore, when used as a transmission mask, since the charged particle beam is irradiated onto the upper Si plate 101,
It may be possible to attach a metal film to the upper layer Si plate 101 to prevent charging and dissolution, but if this metal film is not completely attached or as a result of the mask being heated or sputtered during use, Charge-up also occurs when conductivity decreases.

Furthermore, this charge-up problem is
Silicon oxide film from upper Si plate 101 around the wafer
This can be solved by attaching a conductive layer across the wafer 103 to the support Si plate 102, but if it is applied around the wafer, other processes become difficult and the problem is that it is likely to peel off and cause defects.

[0016]Also, it may be possible to form a conductive film by drilling a hole through the silicon oxide film 103 from the upper Si plate 101, but this would require another independent process, which would increase the number of man-hours. There has been a problem in that when an electron beam is irradiated on a device, stray beams tend to occur.

Therefore, the present invention makes it possible to make it difficult to charge up the upper silicon plate and to make it difficult to generate stray beams when the upper silicon plate constituting the transmission mask is irradiated with a charged particle beam. It is an object of the present invention to provide a transmission mask for charged particle exposure that has a stable structure and is difficult to cause defects.

[0018]

[Means for Solving the Problems] In order to achieve the above object, a transmission mask for charged particle exposure according to the present invention has a mask pattern formed on an upper silicon plate for forming a desired pattern using a charged particle beam. An upper silicon plate and a support silicon plate are bonded together with a silicon oxide film in between, and a first opening through which the charged particle beam passes is formed in the support silicon plate under the mask pattern, and the mask pattern is A second opening is formed in the supporting silicon plate other than under the formed region, and the second opening penetrates directly below the upper silicon plate, and the upper silicon plate and the supporting silicon plate are electrically connected within the second opening. It is constructed by forming a conductive film for conduction. In this case, a conductive film may be formed to electrically connect the upper silicon plate and the supporting silicon plate within the first opening.

In order to achieve the above object, the transmission mask for charged particle exposure according to the present invention has a mask pattern formed on an upper silicon plate for forming a desired pattern using a charged particle beam, and the upper silicon plate and the supporting silicon A first opening through which the charged particle beam passes is formed in the support silicon plate under the mask pattern, and a first opening is formed under the area where the mask pattern is formed. A second opening that penetrates directly below the upper silicon plate is formed in the supporting silicon plate other than the above, and a conductive film that electrically connects the upper silicon plate and the supporting silicon plate is formed within the second opening. It is something that is formed.

In the present invention, the conductive film may be polysilicon. The temperature of the mask of the present invention is raised to 600 to 800° C. by being irradiated with an electron beam. When metal is attached to silicon and raised to this temperature, except for some metals, it diffuses into the silicon or precipitates out of the silicon, so the only metals that can be used are high-melting point metals. Polysilicon is more preferable than polysilicon because it allows a film with a sufficient thickness to be deposited.

[0021]

[Operation] In the present invention, as shown in FIG.
Since the structure is such that the metal film 8 that electrically connects the upper Si plate 1 and the supporting Si plate 2 is formed within the upper Si plate 6b, the upper Si plate 1 and the supporting Si plate 2 can be completely electrically connected. Therefore, when the upper layer Si plate 1 is irradiated with a charged particle beam, charge-up of the upper layer Si plate 1 can be made difficult to occur, and an opening is made in the silicon oxide film 3 from the conventional upper layer Si plate 1 to conduct Stray beams, which tend to occur when a substance is embedded, can be made less likely to occur.

[0022]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be explained below based on the drawings. 1 and 2 are diagrams explaining one embodiment of a transmission mask for charged particle exposure according to the present invention. FIG. 1 is a cross-sectional view showing the structure of one embodiment, and FIG. 2 is a diagram illustrating a manufacturing method of one embodiment. FIG. In these figures, 1 is an upper Si plate, 2 is a support Si plate, 3 is a silicon oxide film formed on the support Si plate 2, 4a and 4b are openings formed in the support Si plate 2, and 5
are mask patterns formed on the upper layer Si plate 1, 6a, 6
b is an opening formed in the silicon oxide film 3, and 7 is a polyS
A mask 8 is a metal film made of Ta or the like.

Next, the manufacturing method will be explained. First, as shown in FIG. 2(a), an upper layer Si plate 1 with a film thickness of about 500 μm and a film thickness of about 4″φ is formed by thermal oxidation to reduce the film thickness to 0.5 μm.
A film thickness 5 in which a silicon oxide film 3 of approximately 5 to 1 μm is formed.
The support Si plate 2 with a diameter of about 4" and a thickness of about 00 μm is melted and bonded together. The thickness of the upper layer Si plate 1 is 20 μm.
The thickness is preferably less than μm, and more preferably about 5 to 15 μm. This is because if the thickness exceeds 20 μm, the effect of the thickness of the Si plate will appear on the pattern during exposure.

Next, as shown in FIG. 2(b), the thick-film upper layer Si plate 1 is polished to a predetermined thickness, for example, 10 μm.
Cut it out to a certain extent and make it thin. Next, as shown in FIG. 2(c), the supporting Si plate 2 is anisotropically etched with a KOH aqueous solution using a mask (not shown) made of a Si3 N4 film, a SiO2 film, etc. to form a silicon oxide film 3. The openings 4a and 4b are formed to expose the openings 4a and 4b. For example, four openings 4b are formed around the opening 4a. Then, R
The mask is removed using IE or the like.

Next, as shown in FIG. 2(d), after patterning the upper layer Si plate 1 by RIE or the like to form a mask pattern 5 for forming a desired pattern using a charged particle beam, RIE The silicon oxide film 3 is etched through the openings 4a, 4b by etching the openings 6a, 4b, etc.
6b is formed. At this time, the support S under the mask pattern 5
Openings 4a and 6 penetrate through the i-board 2 to just below the upper Si board 1.
a is formed, and openings 4b and 6b are formed in the support Si plate 2 other than under the area where the mask pattern 5 is formed, penetrating to just below the upper layer Si plate 1. Opening 4b
, 6b are formed at, for example, four locations around the openings 4a, 6a.

Next, as shown in FIG. 2(e), the opening 4
After forming a mask 7 such as a resist in the openings 4b and 6a, Ta is deposited by sputtering or the like so that the upper Si plate 1 and the support Si plate 2 in the openings 4b and 6b are electrically connected to each other to form a metal film 8.
form.

Then, by removing the mask 7 on which the metal film 8 is formed by the lift-off method, a transmission mask for charged particle exposure as shown in FIG. 1 can be obtained.

That is, in the above embodiment, the upper layer Si plate 1
and supporting Si plate 2 are bonded together with silicon oxide film 3 in between, and openings 4a and 6a through which the charged particle beam passes are formed in supporting Si plate 2 below mask pattern 5, and mask pattern 5 is formed. An opening 4b that penetrates the supporting Si plate 2 to just below the upper layer Si plate 1 except under the area where
, 6b are formed, and a metal film 8 is formed to electrically connect the upper layer Si plate 1 and the support Si plate 2 within the openings 4b and 6b. In this way, the opening 4b,
Since the structure is such that the metal film 8 that electrically connects the upper Si plate 1 and the supporting Si plate 2 is formed within the upper Si plate 6b, the upper Si plate 1 and the supporting Si plate 2 can be completely electrically connected. Therefore, when the upper layer Si plate 1 is irradiated with a charged particle beam, charge-up of the upper layer Si plate 1 can be made difficult to occur, and an opening is made in the silicon oxide film 3 from the conventional upper layer Si plate 1 to conduct Stray beams, which tend to occur when a substance is embedded, can be made less likely to occur.

Further, the openings 4b, 6b and the metal film 8 can be formed by a deposition method, a photolithography process, or an etching process that is commonly used. To obtain a transmission mask for charged particle exposure that can be formed without adding a special process, such as forming openings 4b and 6b at the same time as forming 4b, and has a stable structure that is unlikely to cause defects. be able to.

Furthermore, in the above embodiment, the openings 4b, 6b
can be used for patterning the openings to the support, and can also be used for alignment with a desired pattern of through-holes. Therefore, it can significantly contribute to improving the reliability of the mask itself.

Next, block exposure using the transmission mask according to the present invention will be explained.

FIG. 3 is a diagram showing the configuration of an exposure apparatus having a transmission mask according to one embodiment. As shown in FIG. 3, the exposure apparatus is divided into an exposure section 10 and a control section 50. Exposure section 10
a charged particle beam generation source 14 having a cathode electrode 11, a grid electrode 12, and an anode 13; a first slit 15 for forming a charged particle beam into, for example, a rectangular shape;
a first electron lens 16 that focuses the shaped beam;
A slit deflector 17 for deflecting the beam position according to the deflection signal S1, second and third lenses 18 and 19 provided opposite to each other, and the second and third lenses 18,
A transmission mask 20 is mounted so as to be movable in the horizontal direction between the lenses 19 and 19, and second and third lenses 18, which are arranged above and below the transmission mask 20 according to positional information P1 to P4, respectively.
first to fourth deflectors 21 to 24 which deflect the beam between 19 and select one of the plurality of transmission holes 20 on the transmission mask;
, a blanking 25 that blocks or passes the beam according to a blanking signal, a fourth lens 26, an aperture 27, a refocusing coil 28, and a fifth
lens 29, focus coil 30, stigma coil 31, sixth lens 32, and exposure position determination signal S.
2, S3, a main differential coil 33 and a sub-deflector 34 that position the beam on the wafer, and a stage 35 on which the wafer is mounted and movable in the X-Y direction.
It has first to fourth alignment coils 36 to 39.

On the other hand, the control unit 50 includes a storage medium 51 that stores design data of an integrated circuit device, a CPU 52 that controls the entire charged particle beam, and information on, for example, drawing information taken in by the CPU 52 and a wafer on which the pattern is to be drawn. An interface 53 that transfers various information on drawing position information on W and mask information of the transparent mask 20, a data memory 54 that holds drawing pattern information and mask information transferred from the interface 53, and the drawing pattern information and mask information. Accordingly, for example, one of the transmission holes of the transmission mask is specified, and position data indicating the position of the specified transmission hole on the transmission mask is generated, and the shape difference between the pattern shape to be drawn and the specified transmission hole shape is A pattern control controller 55 serves as a specifying means, a holding means, a calculating means, and an output means for performing various processes including a process of calculating a corresponding deflection value H, and a deflection signal S1 is generated from the deflection value H.
an amplifier section 55 that generates a blanking signal SB, a mask moving mechanism 57 that moves the transmission mask 20 as necessary, a blanking control circuit 58, and an amplifier section 59 that generates a blanking signal SB.
A sequence controller 60 that controls the writing processing sequence according to the writing position information transferred from the wafer, a stage control mechanism 61 that moves the stage as necessary, a laser interferometer 62 that detects the stage position, and an exposure position on the wafer. a deflection control circuit 63 that calculates the
It is equipped with

Next, the transmission mask 20 according to the present invention will be specifically explained. FIGS. 4A and 4B are overall plan views showing the front and back surfaces of a transmission mask of one embodiment, respectively. As shown in FIG. 4(a), the transmission mask 20 has approximately 50
The size is about mm□, and some of them are 10 to 20 m.
Pattern formation area 201 consisting of m□ and 5×10m
A conductive hole formation region 2 for electrically connecting the first silicon plate 1 and the supporting silicon plate 3, consisting of m□
There are multiple 02's. As shown in FIG. 4(a), the pattern forming area 201 has a large number of areas E1 to E9 (nine in the figure) arranged in a matrix at a predetermined pitch interval EL.
is provided, and the size of one area is a size corresponding to the maximum deflection range of the beam in the transmission mask, for example, approximately 1 to 5 mm square. The reference points E1 to E9 (indicated by ● in the figure) are each given an XY coordinate value. For example, if the area coordinate EXY = (1, 1),
It is assumed that E7 is expressed.

As shown in FIG. 5, one area has a large number of cells arranged in matrix at a predetermined pitch BL (in the figure,
36) blocks B1 to B26 are provided,
The size of one block corresponds to the size of the beam on the transmission mask, and is, for example, about 100 to 500 μm square. That is, selection of a mask pattern 5 in which one exposure unit of mask pattern 5 is formed in one block is performed by selecting the block in which the mask pattern 5 is formed. That is, as shown in FIG. 6, B1 to B2
6 reference points are also given XY coordinates, for example, if block coordinates BXY = (1, 2), B22
This indicates the reference point.

That is, by specifying area coordinates EXY and block coordinates BXY, any block in any area can be expressed. For example, EXY=(1, 1
), BXY=(1, 2), this means that the block of B22 in the area of E7 is specified, and therefore one mask pattern is specified. On the other hand, Fig. 4(b
), first openings 401 to 402 are formed in a portion corresponding to the pattern formation region 202, and second openings 601 to 402 are formed in the conduction opening formation region.
602 is formed. The first opening only needs to be an opening in the support substrate 3 corresponding to a region where a mask pattern is formed, a so-called area portion, and one opening may be provided for each area as shown in 401. 402
As shown in the figure, one opening may be formed over a plurality of areas. Note that the second opening is 601a~
As shown in 601d, it is composed of a plurality of rectangles of about 2 mm x 3 mm square, but as described above, when aligning the transmission pattern with respect to the opening of the support part, as shown in 602a to 602d, , it is sufficient to use a small opening. In the figure, the openings appear to be double because they are formed by anisotropic etching.
The inner side that looks heavy is the part corresponding to the first silicon plate 1. In addition, blocks B1, B6, B31, which are indicated by hatching and located at the four corners of one area in FIG. 4(a),
B36 is a variable rectangular transmission hole. Note that FIG. 7 is a diagram showing an example of one exposure unit mask pattern 5 formed in a block of one embodiment.

Note that in the above embodiment, the openings 4a, 6a
After forming a mask 7 in the openings 4b and 6b and forming a metal film 8 on the entire surface so as to fill the openings 4b and 6b, the mask 7 with the metal film 8 formed thereon is removed by a lift-off method, and the upper layer Si plate 1 and the support are removed. The metal film 8 that makes the Si plate 2 conductive is connected to the opening 4b,
Although the case where the openings 4b and 6b are formed has been described, the present invention is not limited to this, and as shown in FIGS. A metal film 8 is formed by depositing Ta on the entire surface,
A resist mask 9 is formed on the metal film 8, and the metal film 8 in the openings 4a and 6a is etched by RIE or the like using this resist mask 9, and then the resist mask 9 is removed. It is also possible to form a metal film 8 in the openings 4b and 6b that conducts the support Si plate 2 and the support Si plate 2.

Furthermore, as shown in FIGS. 9(a) and 9(b),
A conductive poly-Si film 10 is formed by depositing conductive poly-Si over the entire surface so as to fill the openings 4b and 6b using a CVD method or the like.
After forming, the upper layer Si plate 1 and the conductive poly-Si film 10 are patterned by RIE etc. to form a mask pattern 5, and the conductive poly-Si film 10 is formed to make the upper layer Si plate 1 and the support Si plate 2 electrically conductive. It may also be formed within the openings 4b and 6b.

In each of the above embodiments, the support silicon plate 2 under the mask pattern 5 has an opening 4a through which the charged particle beam passes.
, 6a are formed, and openings 4b and 6b are formed in the supporting silicon plate 2 other than under the area where the mask pattern 5 is formed, penetrating to just below the upper silicon plate 1.
A case has been described in which a conductive film 8 is formed to electrically connect the upper silicon plate 1 and the support silicon plate 2 within the openings 4b and 6b, but as shown in FIG. Openings 4a and 6a through which the charged particle beam passes are formed in the supporting silicon plate 2 below 5, and a conductive film is formed to electrically connect the upper silicon plate 1 and the supporting silicon plate 2 within these openings 4a and 6a. 8 may be formed and configured. In this case, if poly-Si is used for the conductive film 8, the portions that will become the through holes are etched together during etching to form the desired pattern, so the number of steps can be reduced. In this case, the openings 4a and 6a may be opened first and the mask pattern 5 may be created after polysilicon is deposited.

[0040]

[Effects of the Invention] According to the present invention, when the upper silicon plate constituting the transmission mask is irradiated with a charged particle beam, charge-up of the upper silicon plate is less likely to occur, and stray beams are less likely to be generated. This has the effect that it is possible to obtain a transmission mask with a stable structure in which defects are unlikely to occur.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing the structure of one embodiment.

FIG. 2 is a diagram illustrating a manufacturing method of one embodiment.

FIG. 3 is a diagram showing the configuration of an exposure apparatus having a transmission mask according to an embodiment.

FIG. 4 is a plan view of a transmission mask according to one embodiment.

FIG. 5 is a diagram illustrating one area of a transmission mask in one embodiment.

FIG. 6 is a diagram showing each block within one area in one embodiment.

FIG. 7 is a diagram showing an example of a transmission hole formed in a block according to an embodiment.

FIG. 8 is a diagram illustrating a manufacturing method of another example.

FIG. 9 is a diagram illustrating a manufacturing method of another example.

FIG. 10 is a sectional view showing the structure of another embodiment.

FIG. 11 is a sectional view showing the structure of a conventional example.

FIG. 12 is a diagram illustrating a conventional manufacturing method.

[Explanation of symbols]

1 Upper layer Si plate 2 Support Si plate 3 Silicon oxide film 4a, 4b opening 5 Mask pattern 6a, 6b opening 8 Metal film 10 Conductive poly-Si film

Claims (3)

[Claims] 1. A mask pattern (5) for forming a desired pattern using a charged particle beam is formed on an upper silicon plate (1), and the upper silicon plate (1) and a supporting silicon plate (2) are connected to each other. are bonded together with a silicon oxide film (3) in between, and first openings (4a, 6a) through which the charged particle beam passes are formed in the supporting silicon plate (2) under the mask pattern (5). and the mask pattern (
5) The supporting silicon plate (
2) are formed with second openings (4b, 6b) penetrating directly below the upper silicon plate (1), and the second openings (4b, 6b) are formed in the upper silicon plate (1).
b, 6b), a conductive film (8) is formed to electrically connect the upper silicon plate (1) and the support silicon plate (2). mask. 2. A mask pattern (5) for forming a desired pattern using a charged particle beam is formed on an upper silicon plate (1), and the upper silicon plate (1) and a supporting silicon plate (2) are connected to each other. are bonded together with a silicon oxide film (3) in between, and openings (4a, 6a) through which the charged particle beam passes are formed in the supporting silicon plate (2) under the mask pattern (5). A charged particle characterized in that a conductive film (8) is formed in the opening (4a, 6a) to electrically connect the upper silicon plate (1) and the supporting silicon plate (2). Transmission mask for exposure. 3. The transmission mask for charged particle exposure according to claim 1, wherein the conductive film (8) is a polysilicon film.