TW529080B - Reflection and refraction optical system and exposure device having this system - Google Patents

Reflection and refraction optical system and exposure device having this system Download PDF

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Publication number
TW529080B
TW529080B TW090126179A TW90126179A TW529080B TW 529080 B TW529080 B TW 529080B TW 090126179 A TW090126179 A TW 090126179A TW 90126179 A TW90126179 A TW 90126179A TW 529080 B TW529080 B TW 529080B
Authority
TW
Taiwan
Prior art keywords
optical system
lens
reticle
refracting
imaging optical
Prior art date
Application number
TW090126179A
Other languages
English (en)
Chinese (zh)
Inventor
Tomowaki Takahashi
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
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Publication of TW529080B publication Critical patent/TW529080B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0836—Catadioptric systems using more than three curved mirrors
    • G02B17/0844—Catadioptric systems using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW090126179A 2000-10-23 2001-10-23 Reflection and refraction optical system and exposure device having this system TW529080B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000322068 2000-10-23
JP2001003200 2001-01-11
JP2001309516A JP4245286B2 (ja) 2000-10-23 2001-10-05 反射屈折光学系および該光学系を備えた露光装置

Publications (1)

Publication Number Publication Date
TW529080B true TW529080B (en) 2003-04-21

Family

ID=27345004

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090126179A TW529080B (en) 2000-10-23 2001-10-23 Reflection and refraction optical system and exposure device having this system

Country Status (8)

Country Link
US (1) US7030965B2 (enExample)
EP (1) EP1336887A4 (enExample)
JP (1) JP4245286B2 (enExample)
KR (1) KR100799418B1 (enExample)
CN (1) CN100460921C (enExample)
AU (1) AU2001295994A1 (enExample)
TW (1) TW529080B (enExample)
WO (1) WO2002035273A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US8289619B2 (en) 2004-01-14 2012-10-16 Carl Zeiss Smt Gmbh Catadioptric projection objective
US8363315B2 (en) 2004-04-08 2013-01-29 Carl Zeiss Smt Gmbh Catadioptric projection objective with mirror group
US8913316B2 (en) 2004-05-17 2014-12-16 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images

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TW538256B (en) 2000-01-14 2003-06-21 Zeiss Stiftung Microlithographic reduction projection catadioptric objective
JP2004514943A (ja) 2000-11-28 2004-05-20 カール・ツアイス・エスエムテイ・アーゲー １５７ｎｍリソグラフィ用の反射屈折投影系
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
DE10316428A1 (de) * 2003-04-08 2004-10-21 Carl Zeiss Smt Ag Katadioptrisches Reduktionsobjektiv
KR101532824B1 (ko) 2003-04-09 2015-07-01 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
KR101516140B1 (ko) * 2003-05-06 2015-05-04 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
JP4706171B2 (ja) * 2003-10-24 2011-06-22 株式会社ニコン 反射屈折投影光学系、露光装置及び露光方法
US7348575B2 (en) 2003-05-06 2008-03-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
CN1307456C (zh) * 2003-05-23 2007-03-28 佳能株式会社 投影光学系统、曝光装置及器件的制造方法
US7085075B2 (en) * 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
TWI609409B (zh) 2003-10-28 2017-12-21 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
TWI519819B (zh) 2003-11-20 2016-02-01 尼康股份有限公司 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法
US7466489B2 (en) * 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
WO2005059645A2 (en) * 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
CN1910494B (zh) * 2004-01-14 2011-08-10 卡尔蔡司Smt有限责任公司 反射折射投影物镜
US7463422B2 (en) 2004-01-14 2008-12-09 Carl Zeiss Smt Ag Projection exposure apparatus
TWI609410B (zh) 2004-02-06 2017-12-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
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JP5600128B2 (ja) * 2004-07-14 2014-10-01 カール・ツァイス・エスエムティー・ゲーエムベーハー カタディオプトリック投影対物系
JP2006119244A (ja) * 2004-10-20 2006-05-11 Canon Inc 反射屈折型投影光学系及び当該反射屈折型投影光学系を有する露光装置、デバイス製造方法
EP1844365A1 (en) * 2005-02-03 2007-10-17 Carl Zeiss SMT AG Catadioptric projection objective with intermediate image
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5495555B2 (ja) * 2005-03-31 2014-05-21 ケーエルエー−テンカー コーポレイション 非球面を使用した小型で超高ｎａの反射屈折対物レンズ
JP2006309220A (ja) 2005-04-29 2006-11-09 Carl Zeiss Smt Ag 投影対物レンズ
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20170089028A (ko) 2005-05-12 2017-08-02 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 디바이스 제조 방법
DE102005024290A1 (de) * 2005-05-27 2006-11-30 Carl Zeiss Smt Ag Abbildungssystem, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
WO2006128613A1 (en) 2005-06-02 2006-12-07 Carl Zeiss Smt Ag Microlithography projection objective
EP1746463A2 (de) 2005-07-01 2007-01-24 Carl Zeiss SMT AG Verfahren zum Korrigieren eines lithographischen Projektionsobjektivs und derartiges Projektionsobjektiv
US7738188B2 (en) * 2006-03-28 2010-06-15 Carl Zeiss Smt Ag Projection objective and projection exposure apparatus including the same
US7920338B2 (en) * 2006-03-28 2011-04-05 Carl Zeiss Smt Gmbh Reduction projection objective and projection exposure apparatus including the same
EP1852745A1 (en) * 2006-05-05 2007-11-07 Carl Zeiss SMT AG High-NA projection objective
EP1890191A1 (en) 2006-08-14 2008-02-20 Carl Zeiss SMT AG Catadioptric projection objective with pupil mirror
WO2008087827A1 (ja) * 2007-01-16 2008-07-24 Nikon Corporation 結像光学系、露光装置、およびデバイス製造方法
US7929114B2 (en) 2007-01-17 2011-04-19 Carl Zeiss Smt Gmbh Projection optics for microlithography
WO2008104192A1 (en) * 2007-02-28 2008-09-04 Carl Zeiss Smt Ag Catadioptric projection objective with pupil correction
US20080259304A1 (en) * 2007-04-20 2008-10-23 Asml Netherlands B.V. Lithographic apparatus and method
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
DE102009011328A1 (de) * 2009-03-05 2010-08-19 Carl Zeiss Smt Ag Abbildende Optik
JP2011049571A (ja) * 2010-09-24 2011-03-10 Nikon Corp 反射屈折投影光学系、露光装置及び露光方法
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CN104062746B (zh) * 2014-06-23 2016-08-24 中国科学院光电技术研究所 一种大数值孔径的折反射浸没投影光学系统
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JP2015132843A (ja) * 2015-03-02 2015-07-23 株式会社ニコン 投影光学系、露光装置、露光方法、およびデバイス製造方法
JP6358242B2 (ja) * 2015-11-30 2018-07-18 株式会社ニコン 露光装置、露光方法、デバイス製造方法およびパターン形成方法
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US8416490B2 (en) 2004-01-14 2013-04-09 Carl Zeiss Smt Gmbh Catadioptric projection objective
US8730572B2 (en) 2004-01-14 2014-05-20 Carl Zeiss Smt Gmbh Catadioptric projection objective
US8289619B2 (en) 2004-01-14 2012-10-16 Carl Zeiss Smt Gmbh Catadioptric projection objective
US8339701B2 (en) 2004-01-14 2012-12-25 Carl Zeiss Smt Gmbh Catadioptric projection objective
US8355201B2 (en) 2004-01-14 2013-01-15 Carl Zeiss Smt Gmbh Catadioptric projection objective
US9772478B2 (en) 2004-01-14 2017-09-26 Carl Zeiss Smt Gmbh Catadioptric projection objective with parallel, offset optical axes
US8208199B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US8804234B2 (en) 2004-01-14 2014-08-12 Carl Zeiss Smt Gmbh Catadioptric projection objective including an aspherized plate
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US8908269B2 (en) 2004-01-14 2014-12-09 Carl Zeiss Smt Gmbh Immersion catadioptric projection objective having two intermediate images
US8363315B2 (en) 2004-04-08 2013-01-29 Carl Zeiss Smt Gmbh Catadioptric projection objective with mirror group
US8913316B2 (en) 2004-05-17 2014-12-16 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9019596B2 (en) 2004-05-17 2015-04-28 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9134618B2 (en) 2004-05-17 2015-09-15 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images
US9726979B2 (en) 2004-05-17 2017-08-08 Carl Zeiss Smt Gmbh Catadioptric projection objective with intermediate images

Also Published As

Publication number Publication date
CN1535392A (zh) 2004-10-06
KR20030045130A (ko) 2003-06-09
KR100799418B1 (ko) 2008-01-30
AU2001295994A1 (en) 2002-05-06
JP2002277742A (ja) 2002-09-25
JP4245286B2 (ja) 2009-03-25
US20040130806A1 (en) 2004-07-08
CN100460921C (zh) 2009-02-11
EP1336887A1 (en) 2003-08-20
EP1336887A4 (en) 2008-07-09
WO2002035273A1 (en) 2002-05-02
US7030965B2 (en) 2006-04-18

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