TW525245B - Plating system with remote secondary anode for semiconductor manufacturing - Google Patents

Plating system with remote secondary anode for semiconductor manufacturing Download PDF

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Publication number
TW525245B
TW525245B TW090124242A TW90124242A TW525245B TW 525245 B TW525245 B TW 525245B TW 090124242 A TW090124242 A TW 090124242A TW 90124242 A TW90124242 A TW 90124242A TW 525245 B TW525245 B TW 525245B
Authority
TW
Taiwan
Prior art keywords
plating
electroplating
cavity
steel
copper
Prior art date
Application number
TW090124242A
Other languages
English (en)
Chinese (zh)
Inventor
Minh Quoc Tran
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of TW525245B publication Critical patent/TW525245B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating

Landscapes

  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
TW090124242A 2000-10-02 2001-10-02 Plating system with remote secondary anode for semiconductor manufacturing TW525245B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/678,503 US6413390B1 (en) 2000-10-02 2000-10-02 Plating system with remote secondary anode for semiconductor manufacturing

Publications (1)

Publication Number Publication Date
TW525245B true TW525245B (en) 2003-03-21

Family

ID=24723054

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090124242A TW525245B (en) 2000-10-02 2001-10-02 Plating system with remote secondary anode for semiconductor manufacturing

Country Status (9)

Country Link
US (1) US6413390B1 (https=)
EP (1) EP1323186B1 (https=)
JP (1) JP2004510888A (https=)
KR (1) KR100747132B1 (https=)
CN (1) CN1333442C (https=)
AU (1) AU2001275274A1 (https=)
DE (1) DE60140305D1 (https=)
TW (1) TW525245B (https=)
WO (1) WO2002029875A2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649034B1 (en) * 2001-06-27 2003-11-18 Advanced Micro Devices, Inc. Electro-chemical metal alloying for semiconductor manufacturing
JP4014827B2 (ja) * 2001-07-25 2007-11-28 シャープ株式会社 メッキ処理装置
AU2002343330A1 (en) * 2001-08-31 2003-03-10 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
JP2005163080A (ja) * 2003-12-01 2005-06-23 Toshiba Corp めっき装置及びめっき方法
DE102005014748B4 (de) * 2005-03-31 2007-02-08 Advanced Micro Devices, Inc., Sunnyvale Technik zum elektrochemischen Abscheiden einer Legierung mit chemischer Ordnung
CN102492971B (zh) * 2011-12-28 2014-09-17 无锡科硅电子技术有限公司 用于半导体基片表面进行电镀的装置
CN102560587B (zh) * 2012-02-08 2015-03-18 南通富士通微电子股份有限公司 电镀装置
CN103422150A (zh) * 2012-05-22 2013-12-04 泰州宏瑞新材料有限责任公司 用于电镀的重金属离子浓度调节槽及电镀装置
JP5692268B2 (ja) * 2013-03-25 2015-04-01 トヨタ自動車株式会社 金属被膜の成膜装置および成膜方法
CN114929943A (zh) * 2020-01-09 2022-08-19 朗姆研究公司 半导体金属互连件的高速3d金属打印

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3144128C1 (de) * 1981-11-06 1983-06-09 Bayerische Motoren Werke AG, 8000 München Vorrichtung zum galvanischen Abscheiden eines Metalls auf einem metallischen Werkstueck
GB8911566D0 (en) * 1989-05-19 1989-07-05 Sun Ind Coatings Plating system
US5368711A (en) * 1990-08-01 1994-11-29 Poris; Jaime Selective metal electrodeposition process and apparatus
JPH04284691A (ja) * 1991-03-13 1992-10-09 Arumetsukusu:Kk プリント配線板の電気めっき方法
JPH04362199A (ja) * 1991-06-06 1992-12-15 Nec Corp 電気めっき装置
JPH05339800A (ja) * 1992-06-09 1993-12-21 Nec Corp 可溶性アノードと不溶性アノードを持つ噴流めっき装置
TW405158B (en) * 1997-09-17 2000-09-11 Ebara Corp Plating apparatus for semiconductor wafer processing
CN1168854C (zh) * 1997-09-30 2004-09-29 塞米图尔公司 用于电镀半导体晶片的系统、装置和方法
US6024856A (en) * 1997-10-10 2000-02-15 Enthone-Omi, Inc. Copper metallization of silicon wafers using insoluble anodes
JP3187011B2 (ja) * 1998-08-31 2001-07-11 日本電気株式会社 半導体装置の製造方法
US6197182B1 (en) * 1999-07-07 2001-03-06 Technic Inc. Apparatus and method for plating wafers, substrates and other articles

Also Published As

Publication number Publication date
EP1323186A2 (en) 2003-07-02
CN1529903A (zh) 2004-09-15
WO2002029875A2 (en) 2002-04-11
KR20040007399A (ko) 2004-01-24
KR100747132B1 (ko) 2007-08-09
WO2002029875A3 (en) 2002-08-15
US6413390B1 (en) 2002-07-02
JP2004510888A (ja) 2004-04-08
CN1333442C (zh) 2007-08-22
EP1323186B1 (en) 2009-10-28
AU2001275274A1 (en) 2002-04-15
DE60140305D1 (de) 2009-12-10

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