JP2005163080A - めっき装置及びめっき方法 - Google Patents
めっき装置及びめっき方法 Download PDFInfo
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- JP2005163080A JP2005163080A JP2003401773A JP2003401773A JP2005163080A JP 2005163080 A JP2005163080 A JP 2005163080A JP 2003401773 A JP2003401773 A JP 2003401773A JP 2003401773 A JP2003401773 A JP 2003401773A JP 2005163080 A JP2005163080 A JP 2005163080A
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- plating
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- seed layer
- plating solution
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- 238000007747 plating Methods 0.000 title claims abstract description 137
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 230000033116 oxidation-reduction process Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 9
- 238000005192 partition Methods 0.000 claims description 9
- 239000007788 liquid Substances 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 52
- 239000010410 layer Substances 0.000 description 45
- 239000011229 interlayer Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910020177 SiOF Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/002—Cell separation, e.g. membranes, diaphragms
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】めっき装置1は、めっき液が貯留されるめっき液槽2、ウェハWを保持するホルダ3等から構成されている。めっき液槽2内には、ウェハWのシード層103との間に電圧が印加されるアノード5、及びシード層103に電気的に接続可能な犠牲アノード7が配置されている。犠牲アノード7は、酸化還元電位がシード層103を構成している金属の酸化還元電位より卑な物質から構成されている。
【選択図】図1
Description
以下、第1の実施の形態について説明する。図1は本実施の形態に係るめっき装置の模式的な垂直断面図であり、図2は本実施の形態に係るウェハの模式的な垂直断面図である。
以下、実施例について説明する。本実施例では、めっきの埋め込み状態について観察した。
以下、第2の実施の形態について説明する。本実施の形態では、炭素から形成された犠牲アノードを使用した例について説明する。図7は本実施の形態に係るめっき装置の模式的な垂直断面図である。
Claims (5)
- めっき液を貯留するめっき液槽と、
シード層が形成された基板を前記めっき液槽内で保持するホルダと、
前記めっき液槽内に配置され、酸化還元電位が前記シード層を構成している金属の酸化還元電位より卑な物質から構成され、前記ホルダに保持された基板のシード層に電気的に接続可能な第1のアノードと、
前記めっき液槽内に配置され、前記ホルダに保持された基板のシード層との間に電圧を印加可能な第2のアノードと、
を具備することを特徴とするめっき装置。 - 前記めっき液槽内に配置され、前記ホルダに保持された基板が前記めっき液に浸漬される領域と前記第1のアノードが配置された領域とを分離する隔壁或いは隔膜をさらに備えたことを特徴とする請求項1記載のめっき装置。
- めっき液を貯留しためっき液貯留部に配置され、かつ酸化還元電位が基板のシード層を構成している金属の酸化還元電位より卑な物質から構成された第1のアノードを前記シード層に電気的に接続する工程と、
前記基板を前記めっき液に接液させる工程と、
前記シード層と前記めっき液貯留部内に配置された第2のアノードとの間に電圧を印加して、前記基板にめっきを施す工程と、
を具備することを特徴とするめっき方法。 - 前記基板をめっき液に接液させる工程と前記基板にめっきを施す工程との間に前記第1のアノードと前記シード層との電気的な接続を解除する工程をさらに備えたことを特徴とする請求項3記載のめっき方法。
- 前記基板をめっき液に接液させる工程は、前記基板が前記めっき液に接液する領域と前記第1のアノードが配置された領域とが隔壁或いは隔膜で分離されて行われることを特徴とする請求項3又は4記載のめっき方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003401773A JP2005163080A (ja) | 2003-12-01 | 2003-12-01 | めっき装置及びめっき方法 |
TW093136334A TWI250552B (en) | 2003-12-01 | 2004-11-25 | Plating apparatus, plating method, and manufacturing method of semiconductor device |
US10/998,970 US20050145500A1 (en) | 2003-12-01 | 2004-11-30 | Plating apparatus, plating method, and manufacturing method of semiconductor device |
CNB2004100965542A CN100342062C (zh) | 2003-12-01 | 2004-11-30 | 电镀装置、电镀方法和半导体器件的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003401773A JP2005163080A (ja) | 2003-12-01 | 2003-12-01 | めっき装置及びめっき方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005163080A true JP2005163080A (ja) | 2005-06-23 |
Family
ID=34708658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003401773A Pending JP2005163080A (ja) | 2003-12-01 | 2003-12-01 | めっき装置及びめっき方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20050145500A1 (ja) |
JP (1) | JP2005163080A (ja) |
CN (1) | CN100342062C (ja) |
TW (1) | TWI250552B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007162068A (ja) * | 2005-12-13 | 2007-06-28 | Tokyo Electron Ltd | 半導体製造装置及び半導体装置の製造方法 |
JP7194305B1 (ja) | 2022-07-01 | 2022-12-21 | 株式会社荏原製作所 | 基板ホルダ、めっき装置、及びめっき方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060237319A1 (en) * | 2005-04-22 | 2006-10-26 | Akira Furuya | Planting process and manufacturing process for semiconductor device thereby, and plating apparatus |
JP4762702B2 (ja) * | 2005-12-08 | 2011-08-31 | 富士フイルム株式会社 | メッキ厚モニタ装置およびメッキ停止装置 |
US8101052B2 (en) * | 2006-11-27 | 2012-01-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Adjustable anode assembly for a substrate wet processing apparatus |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3191759B2 (ja) * | 1998-02-20 | 2001-07-23 | 日本電気株式会社 | 半導体装置の製造方法 |
US6551483B1 (en) * | 2000-02-29 | 2003-04-22 | Novellus Systems, Inc. | Method for potential controlled electroplating of fine patterns on semiconductor wafers |
US6527920B1 (en) * | 2000-05-10 | 2003-03-04 | Novellus Systems, Inc. | Copper electroplating apparatus |
JP2002097595A (ja) * | 2000-09-25 | 2002-04-02 | Hitachi Ltd | 半導体装置の製造方法 |
US6413390B1 (en) * | 2000-10-02 | 2002-07-02 | Advanced Micro Devices, Inc. | Plating system with remote secondary anode for semiconductor manufacturing |
US6425991B1 (en) * | 2000-10-02 | 2002-07-30 | Advanced Micro Devices, Inc. | Plating system with secondary ring anode for a semiconductor wafer |
JP2003268591A (ja) * | 2002-03-12 | 2003-09-25 | Ebara Corp | 電解処理方法及び電解処理装置 |
-
2003
- 2003-12-01 JP JP2003401773A patent/JP2005163080A/ja active Pending
-
2004
- 2004-11-25 TW TW093136334A patent/TWI250552B/zh not_active IP Right Cessation
- 2004-11-30 US US10/998,970 patent/US20050145500A1/en not_active Abandoned
- 2004-11-30 CN CNB2004100965542A patent/CN100342062C/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007162068A (ja) * | 2005-12-13 | 2007-06-28 | Tokyo Electron Ltd | 半導体製造装置及び半導体装置の製造方法 |
JP7194305B1 (ja) | 2022-07-01 | 2022-12-21 | 株式会社荏原製作所 | 基板ホルダ、めっき装置、及びめっき方法 |
KR102589063B1 (ko) * | 2022-07-01 | 2023-10-16 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판 홀더, 도금 장치 및 도금 방법 |
JP2024006255A (ja) * | 2022-07-01 | 2024-01-17 | 株式会社荏原製作所 | 基板ホルダ、めっき装置、及びめっき方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100342062C (zh) | 2007-10-10 |
TWI250552B (en) | 2006-03-01 |
US20050145500A1 (en) | 2005-07-07 |
TW200529286A (en) | 2005-09-01 |
CN1624208A (zh) | 2005-06-08 |
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