US20050145500A1 - Plating apparatus, plating method, and manufacturing method of semiconductor device - Google Patents
Plating apparatus, plating method, and manufacturing method of semiconductor device Download PDFInfo
- Publication number
- US20050145500A1 US20050145500A1 US10/998,970 US99897004A US2005145500A1 US 20050145500 A1 US20050145500 A1 US 20050145500A1 US 99897004 A US99897004 A US 99897004A US 2005145500 A1 US2005145500 A1 US 2005145500A1
- Authority
- US
- United States
- Prior art keywords
- plating
- anode
- plating solution
- seed layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000007747 plating Methods 0.000 title claims abstract description 160
- 238000000034 method Methods 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 230000033116 oxidation-reduction process Effects 0.000 claims abstract description 18
- 239000010405 anode material Substances 0.000 claims abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 238000005192 partition Methods 0.000 claims description 8
- 238000009736 wetting Methods 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000000243 solution Substances 0.000 description 58
- 239000010410 layer Substances 0.000 description 56
- 238000009413 insulation Methods 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 239000011800 void material Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229960000355 copper sulfate Drugs 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- -1 for example Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 229910020177 SiOF Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/002—Cell separation, e.g. membranes, diaphragms
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Definitions
- wiring to connect each element becomes finer and multilayered.
- wiring is formed by filling Cu in via holes and wiring trenches formed on an interlayer insulation film, and then removing unnecessary Cu.
- an electrolytic plating method is used for filling Cu from the point of view of a filling speed.
- a semiconductor wafer hereinafter, referred to as a ‘wafer’
- a seed layer is dissolved and/or bubbles remain on a surface to be plated of a wafer. It is desirable to restrain these dissolution of the seed layer and/or the retention of bubbles because they may cause the occurrence of voids.
- a plating apparatus including: a plating solution tank configured to store a plating solution; a holder configured to hold a substrate on which a seed layer is formed in said plating solution tank; a first anode disposed in said plating solution tank, composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer, and electrically-connectable to the seed layer of the substrate held by said holder; and a second anode disposed in said plating solution tank, capable of applying a voltage between the seed layer of the substrate held by said holder, is provided.
- FIG. 1 is a schematic vertical cross-sectional view of a plating apparatus according to a first embodiment.
- FIG. 2 is a schematic vertical cross-sectional view of a wafer according to the first embodiment.
- FIG. 3 is a flowchart showing the flow-of a plating process according to the first embodiment.
- FIG. 5A and FIG. 5B are schematic vertical cross-sectional views of a wafer according to the first embodiment.
- a plating apparatus 1 is composed of a plating solution tank 2 , and so on, formed in a cylindrical shape.
- the plating solution tank 2 is for storing a plating solution whose main constituent is an electrolytic solution, for example, such as aqueous copper-sulfate solution.
- the holder 3 is composed of a holder main body 3 A and so on, for housing the wafer W inside thereof substantially horizontally.
- a lower surface of the holder main body 3 A opens so that the surface to be plated of the wafer W is to be wetted in a plating solution.
- a seed layer 103 is formed on the barrier metal layer 102 for flowing a current through the wafer W.
- the seed layer 103 is composed of metal, for example, such as Cu.
- a contact 3 B is disposed on inner surface of the holder main body 3 A to bring into contact with the seed layer 103 .
- the contact 3 B is attached to a seal ring 3 C which inhibits the contact of the plating solution with the contact 3 B.
- the seal ring 3 C is elastically deformed, so that the seal ring 3 C sticks fast to the wafer W. Consequently, the contact of the plating solution with the contact 3 B is restrained.
- a tilting and rotating mechanism 4 for tilting the wafer W relative to the solution surface of the plating solution and rotating the wafer W is attached to the holder 3 .
- the tilting and rotating mechanism 4 tilts the wafer W relative to the solution surface of the: plating solution and rotates the holder 3 and all.
- a hoisting/lowering mechanism (not shown) to hoist/lower the wafer W is attached to the holder 3 .
- the hoisting/lowering mechanism hoists/lowers the holder 3 and all.
- the holder 3 is hoisted/lowered, so that the wafer W is immersed in the plating solution or pulled out of the plating solution.
- a substantially bar-shaped sacrificial anode 7 (first anode) which is electrically connectable to the seed layer 103 is disposed outside-of the region sandwiched by the wafer W and the anode 5 in the plating solution tank 2 .
- the sacrificial anode 7 is disposed in the vicinity of the side-wall of the plating solution tank 2 .
- the sacrificial anode 7 is composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer 103 .
- a material for example, metal, metal oxide, carbon (C), or the like, can be cited.
- the seed layer 103 is composed of Cu
- the sacrificial anode 7 is possible to be composed of Zn, Ta, oxides of those, C, or the like.
- the sacrificial anode 7 is formed to have a smaller contact area with the plating solution than the contact area of the wafer W width the plating solution.
- a partition wall 8 is disposed in the plating solution tank 2 .
- the partition wall 8 separate the region where the wafer W is wetted and immersed, from the region where the sacrificial anode 7 is disposed.
- the partition wall 8 is preventing the mixture of the plating solution in the region where the wafer W is wetted and immersed, and the plating solution in the region where the sacrificial anode 7 is disposed, but it is configured to connect the both regions electrically.
- a membrane may be used instead of the partition wall 8 .
- FIG. 3 is a flowchart showing the flow of a plating process according to the present embodiment.
- FIG. 4A to FIG. 4D are schematic views showing the operating state of the plating apparatus 1 according to the present embodiment
- FIG. 5A and FIG. 5B are schematic vertical cross-sectional views of the wafer W according to the present embodiment.
- the seed layer 103 of the wafer W and the sacrificial anode 7 are electrically connected while the wafer W is held by a holder 3 (Step 1 ).
- the tilting and rotating mechanism 4 is activated to rotate the wafer W and tilt the wafer W (Step 2 ).
- the hoisting/lowering mechanism is activated in that status to wet the wafer W and immerse the wafer W in the plating solution as shown in FIG. 4B (Step 3 ).
- the electrical connection between the seed layer 103 and the sacrificial anode 7 is disconnected as shown in FIG. 4C (Step 4 ).
- the power supply 6 is activated, so that a voltage is applied between the seed layer 103 and the anode 5 as shown in FIG. 4D , then the wafer W is plated (Step 5 ).
- the application of the voltage is stopped, so that the plating is stopped (Step 6 ).
- the hoisting/lowering mechanism is activated to pull the wafer W out of the plating solution (Step 7 ).
- a heat treatment (annealing) is applied to the wafer W, and thereby crystals of the seed layer 103 and the plating film 104 grow up. Accordingly, a wiring film being a combination-of the seed layer 103 and the plating film 104 is formed.
- unnecessary portions of the barrier metal film 102 and the wiring film on the interlayer insulation film 101 are removed respectively by, for example, a Chemical Mechanical Polishing (CMP) so that the barrier metal film 102 and the wiring film existing in the via holes 101 A and the wiring trenches 101 B remain respectively. Consequently, a wiring 105 is formed in the via holes 101 A and the wiring trenches 101 B.
- CMP Chemical Mechanical Polishing
- the wafer W is wetted and immersed in the plating solution while the seed layer 103 and the sacrificial anode 7 are in the electrically connected status, the occurrence of voids which is caused by dissolution of a seed layer can be restrained, and the uniformity in a surface of the filmy thickness on the plating film 104 can be improved.
- a reduction-reaction occurs on the seed layer 103 and an oxidization reaction occurs on the sacrificial anode 7 , when the wafer W is wetted, and immersed in the plating solution while the wafer-W and the sacrificial anode 7 are in the electrically connected status, because the sacrificial anode 7 is composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer 103 . Therefore, it is possible to restrain the dissolution of the seed layer 103 , so that it is possible to restrain the occurrence of voids.
- the reduction reaction occurs on the seed layer 103 , and thereby the seed layer 103 is plated.
- the amount of plating is even more reduced by making the contact area of the sacrificial anode 7 to the plating solution smaller.
- the non-uniformity of the amount-of plating applied to the wafer W when the wafer W is wetted and immersed in the plating solution is restrained, so that it is possible to improve the uniformity in the surface of the film thickness on the plating film 104 .
- the sacrificial anode 7 since the region where the wafer W is wetted and immersed and the region where the sacrificial anode 7 is disposed are separated by the partition-wall 8 , it is possible to restrain the precipitation of the dissolved sacrificial anode 7 to the wafer W. Namely, when the wafer W is wetted and immersed in the plating solution while the seed layer 103 and the sacrificial anode 7 are in the electrically connected status, the sacrificial anode 7 may be dissolved into the plating solution depending on they composing material thereof. Here, if the sacrificial anode 7 is dissolved, the dissolved material may inhibit the plating on the wafer W.
- the region where the wafer W is wetted and immersed and the region where the sacrificial anode 7 is disposed are separated by the partition wall 8 , and therefore it is possible to avoid the inhibition of the plating to the wafer W even when the sacrificial anode 7 is dissolved.
- the uniformity in the surface of the film thickness on the plating film 104 can be improved. Namely, when the wafer W is plated by applying a voltage between the seed layer 103 and the anode 5 while the seed layer 103 and the sacrificial anode 7 are in the electrically connected status, it is possible that the electric field distribution may be in disorder. On the contrary, in the present embodiment, since the wafer W is plated after the electrical connection between the seed layer 103 and the sacrificial anode 7 is disconnected, the disorder of electric field distribution can be avoided. Therefore, the uniformity in the surface of the film thickness on the plating film 104 can be improved.
- the sacrificial anode 7 is disposed outside of the region sandwiched by the wafer W and the anode 5 , the electric field distribution is rare to be in disorder when the wafer W is plated. Consequently, the uniformity in the surface of the film thickness on the plating film 104 can be improved.
- a plating 7 apparatus described in the above first embodiment is used.
- a plating solution whose main constituent is aqueous copper sulfate solution is used, and a sacrificial anode composed of Zn is used.
- a wafer which is formed as follows is used. An oxide film of 100 nm thickness is formed on an Si substrate by a thermal oxidation, and thereafter an interlayer insulation film of approximately 1 ⁇ m thickness is formed on the oxide film by using a Chemical Vapor Deposition (CVD) method. Further, wiring trenches having 0.09 ⁇ m width and 300 nm depth are formed on the interlayer insulation film by Photo Engraving Process (PEP) and etching.
- PEP Photo Engraving Process
- a barrier metal layer of 15 nm thickness composed of Ta is formed by using a sputtering method on the interlayer insulation film, and a seed layer of 80 nm thickness composed of Cu is formed on the barrier metal layer.
- these film thicknesses are values measured on the plane of the interlayer insulation film in which the wiring trenches are not formed.
- the wafer is plated so that the plating is filled up to the half height of wiring trenches by using the above-described plating apparatus and wafer and so on, and the same method described in the first embodiment.
- the filled status of plating at the center and edge portions of the wafer at that time is observed.
- the filled status of plating at the center and, edge portions of the wafer which is immersed to the plating solution while a voltage is not applied between the seed layer and the anode is also observed.
- the filled, status of plating at the center and edge portions of the wafer which is immersed in the plating solution while a voltage being substantially the same as when plating, is applied between the seed layer and the anode is also observed.
- the platings are filled up to half height of the wiring trenches at both the center and edge portions of the wafer according to the comparative example 1.
- voids occurred at the center and edge portions of the wafer according to the comparative example 1. It is conceivable that the voids occurred because the seed layer is dissolved.
- the plating is filled up to half height of the wiring trenches at the center portion of the wafer according to the comparative example 2, but at the edge portion of the wafer, the wiring trenches are fully filled by the plating.
- voids occurred at the edge portions of the wafer according to the comparative example 2. It is conceivable that the voids occurred not because the seed layer is dissolved but because the plating is not applied under; the appropriate filling condition when the wafer is immersed in the plating solution.
- the platings are filled up to half height of the wiring trenches at both the center and edge portions of the wafer according to the example.
- the platings are filled up to half height of the wiring trenches at both the center and edge portions of the wafer according to the example.
- FIG. 6 shows a schematic vertical cross-sectional view of a plating apparatus according to the present embodiment.
- the present invention is not limited to the contents described in the above embodiments, and appropriate changes in the structure, the materials, the arrangement of each member, and so on may be made within a range not departing from the sprit of the present invention.
- the wafer W is plated-while the wafer W is tilted relative to the anode 5 is described, but, the wafer W can be plated while the wafer W is substantially in parallel with the anode 5 .
- the wafer W is held in the facedown manner, but the wafer W, can be held in a so-called face-up manner, in which the surface to be plated of the wafer W faces upward.
Abstract
According to an embodiment of the present invention, a plating apparatus, including: a plating solution tank configured to store a plating solution; a holder configured to hold a substrate on which a seed layer is formed in said plating solution tank; a first anode disposed in said plating solution tank, composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer, and electrically connectable to the seed layer of the substrate held by said holder; and a second anode disposed in said plating solution tank, capable of applying a voltage between the seed layer of the substrate held by holder, is provided.
Description
- This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2003-401773, filed on Dec. 1, 2003; the entire contents of which are incorporated herein by reference.
- 1. Field of the Invention
- The present invention relates to, a plating apparatus and a plating method which applies plating on a substrate, and a manufacturing method of a semiconductor device.
- 2. Description of the Related Art
- In recent years, improvement in operating speed of a semiconductor device is required to achieve high integration density and high function of the device. Accordingly, wiring to connect each element becomes finer and multilayered. At present, to correspond to this finer and multilayered wiring, wiring is formed by filling Cu in via holes and wiring trenches formed on an interlayer insulation film, and then removing unnecessary Cu.
- Currently, an electrolytic plating method is used for filling Cu from the point of view of a filling speed. However, when a semiconductor wafer (hereinafter, referred to as a ‘wafer’) is immersed in a plating solution, it is possible that a seed layer is dissolved and/or bubbles remain on a surface to be plated of a wafer. It is desirable to restrain these dissolution of the seed layer and/or the retention of bubbles because they may cause the occurrence of voids.
- To solve these problems, a method to immerse a wafer in a plating solution while applying a voltage between the wafer and an anode, and tilting the wafer, is adopted. Here, when the wafer is immersed in the plating solution, a voltage being substantially the same as is applied when plating is applied. As another method, it is known that a reference electrode is disposed in the vicinity of a wafer, and the wafer is immersed in a plating solution while controlling the electric potential of the wafer to a predetermined electric potential by the reference electrode (for example, refer to the specification of U.S. Pat. No. 6,551,483, and the specification of U.S. Pat. No. 6,562,204).
- However, in the former case, the wafer is tilted to be immersed in the plating solution while applying a voltage thereto, so the amounts of plating film to be formed are different between the early wetted portion and the later wetted portion, and thus there is a problem that it is difficult to form the plating film uniformly. In the latter case, the reference electrode is disposed in the vicinity of the wafer, so an electric field is disturbed by the reference electrode at the time of plating, and thus there is a problem that it is difficult to form the plating film uniformly.
- According to an aspect of the present invention, a plating apparatus, including: a plating solution tank configured to store a plating solution; a holder configured to hold a substrate on which a seed layer is formed in said plating solution tank; a first anode disposed in said plating solution tank, composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer, and electrically-connectable to the seed layer of the substrate held by said holder; and a second anode disposed in said plating solution tank, capable of applying a voltage between the seed layer of the substrate held by said holder, is provided.
- According to another aspect of the present invention, a plating method, including: electrically connecting a first anode to a seed layer of a substrate, wherein the first anode is disposed in a plating solution, and composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer; wetting the substrate in the plating solution; and plating the substrate by applying a voltage between the seed layer and a second anode disposed in the plating solution, is provided.
- According to still another aspect of the present invention, a manufacturing method of a semiconductor device, including: forming a seed layer on a substrate having a recessed portion on the surface, so as to be filled in a part of the recessed portion; electrically connecting a first anode to the seed layer, wherein the first anode is disposed in a plating solution, and composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer; wetting the substrate on which the first anode is electrically connected to the seed layer in the plating solution; forming a plating film on the seed layer so as to be filled in the recessed portion, by applying a voltage between the seed layer and a second anode disposed in the plating solution; and removing the plating film other than the one filled in the recessed portion and the seed layer other than the one filled in the recessed portion, is provided.
-
FIG. 1 is a schematic vertical cross-sectional view of a plating apparatus according to a first embodiment. -
FIG. 2 is a schematic vertical cross-sectional view of a wafer according to the first embodiment. -
FIG. 3 is a flowchart showing the flow-of a plating process according to the first embodiment. -
FIG. 4A toFIG. 4D are schematic views showing the operating state of the plating apparatus according to the first embodiment. -
FIG. 5A andFIG. 5B are schematic vertical cross-sectional views of a wafer according to the first embodiment. -
FIG. 6 is a schematic vertical cross-sectional view of a plating apparatus according to a second embodiment. - Hereinafter, a first embodiment will be described.
FIG. 1 is a schematic vertical cross-sectional view of a plating apparatus according to the present embodiment, andFIG. 2 is a schematic vertical cross-sectional view of a wafer according to the present embodiment. - As shown in
FIG. 1 , aplating apparatus 1 is composed of aplating solution tank 2, and so on, formed in a cylindrical shape. Theplating solution tank 2 is for storing a plating solution whose main constituent is an electrolytic solution, for example, such as aqueous copper-sulfate solution. - A
holder 3 to hold a wafer W (substrate) is disposed above theplating solution tank 2. Theholder 3 holds the wafer W in a so-called facedown manner so that a surface to be plated of the wafer W faces downward. - The
holder 3 is composed of a holdermain body 3A and so on, for housing the wafer W inside thereof substantially horizontally. A lower surface of the holdermain body 3A opens so that the surface to be plated of the wafer W is to be wetted in a plating solution. - In the holder
main body 3A, the wafer W having the following structure is housed. The wafer W includes aninterlayer insulation film 101 as shown inFIG. 2 . Theinterlayer insulation film 101 is composed of a low dielectric constant insulation material, for example, SiOF, SiOC, porous silica, or the like. Theinterlayer insulation film 101 is formed above a semiconductor substrate provided with a semiconductor element (not shown), or the like. In theinterlayer insulation film 101, viaholes 101A as a recessed portion andwiring trenches 101B as the recessed portion are formed. - On the
interlayer insulation film 101, abarrier metal layer 102 is formed for inhibiting the diffusion of metal composing a later-describedplating film 104 to theinterlayer insulation film 101. Thebarrier metal layer 102 is made of a conductive material. Such a conductive material is composed of such as metal, for example, Ta, Ti, or the like, or metal nitride, for example, TiN, TaN, WN, or the like, having a small diffusion coefficient of metal composing theplating film 104 therein. Incidentally, thebarrier metal layer 102 may be formed of layered material of these metal or metal nitride. - A
seed layer 103 is formed on thebarrier metal layer 102 for flowing a current through the wafer W. Theseed layer 103 is composed of metal, for example, such as Cu. - A
contact 3B is disposed on inner surface of the holdermain body 3A to bring into contact with theseed layer 103. Thecontact 3B is attached to aseal ring 3C which inhibits the contact of the plating solution with thecontact 3B. By pressing the wafer W onto theseal ring 3C so as to block off the opening thereof, theseal ring 3C is elastically deformed, so that theseal ring 3C sticks fast to the wafer W. Consequently, the contact of the plating solution with thecontact 3B is restrained. - A tilting and rotating
mechanism 4 for tilting the wafer W relative to the solution surface of the plating solution and rotating the wafer W is attached to theholder 3. The tilting and rotatingmechanism 4 tilts the wafer W relative to the solution surface of the: plating solution and rotates theholder 3 and all. - A hoisting/lowering mechanism (not shown) to hoist/lower the wafer W is attached to the
holder 3. The hoisting/lowering mechanism hoists/lowers theholder 3 and all. By activating the hoisting/lowering mechanism, theholder 3 is hoisted/lowered, so that the wafer W is immersed in the plating solution or pulled out of the plating solution. - A substantially disk-shaped anode 5 (second anode) is disposed at the bottom position of the
plating solution tank 2. Thecontact 3B and theanode 5 are electrically connected to apower supply 6 for applying a voltage between theseed layer 103 and theanode 5 via thecontact 3B. - A substantially bar-shaped sacrificial anode 7 (first anode) which is electrically connectable to the
seed layer 103 is disposed outside-of the region sandwiched by the wafer W and theanode 5 in theplating solution tank 2. In the present embodiment, thesacrificial anode 7 is disposed in the vicinity of the side-wall of theplating solution tank 2. - The
sacrificial anode 7 is composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing theseed layer 103. As such a material, for example, metal, metal oxide, carbon (C), or the like, can be cited. Specifically, for example, when theseed layer 103 is composed of Cu, thesacrificial anode 7 is possible to be composed of Zn, Ta, oxides of those, C, or the like. Thesacrificial anode 7 is formed to have a smaller contact area with the plating solution than the contact area of the wafer W width the plating solution. - A
partition wall 8 is disposed in theplating solution tank 2. Thepartition wall 8 separate the region where the wafer W is wetted and immersed, from the region where thesacrificial anode 7 is disposed. Thepartition wall 8 is preventing the mixture of the plating solution in the region where the wafer W is wetted and immersed, and the plating solution in the region where thesacrificial anode 7 is disposed, but it is configured to connect the both regions electrically. Incidentally, a membrane may be used instead of thepartition wall 8. - Hereinafter, an operating state of a
plating apparatus 1 will be described.FIG. 3 is a flowchart showing the flow of a plating process according to the present embodiment.FIG. 4A toFIG. 4D are schematic views showing the operating state of theplating apparatus 1 according to the present embodiment, andFIG. 5A andFIG. 5B are schematic vertical cross-sectional views of the wafer W according to the present embodiment. - As shown in
FIG. 4A , theseed layer 103 of the wafer W and thesacrificial anode 7 are electrically connected while the wafer W is held by a holder 3 (Step 1). After that, the tilting androtating mechanism 4 is activated to rotate the wafer W and tilt the wafer W (Step 2). - Next, the hoisting/lowering mechanism is activated in that status to wet the wafer W and immerse the wafer W in the plating solution as shown in
FIG. 4B (Step 3). After the wafer W is wetted and immersed in the plating solution, the electrical connection between theseed layer 103 and thesacrificial anode 7 is disconnected as shown inFIG. 4C (Step 4). - After that, the
power supply 6 is activated, so that a voltage is applied between theseed layer 103 and theanode 5 as shown inFIG. 4D , then the wafer W is plated (Step 5). As shown inFIG. 5A , after theplating film 104 is formed up to the predetermined thickness, the application of the voltage is stopped, so that the plating is stopped (Step 6). Finally, the hoisting/lowering mechanism is activated to pull the wafer W out of the plating solution (Step 7). - Incidentally, after that, a heat treatment (annealing) is applied to the wafer W, and thereby crystals of the
seed layer 103 and theplating film 104 grow up. Accordingly, a wiring film being a combination-of theseed layer 103 and theplating film 104 is formed. Next, as shown inFIG. 5B , unnecessary portions of thebarrier metal film 102 and the wiring film on theinterlayer insulation film 101 are removed respectively by, for example, a Chemical Mechanical Polishing (CMP) so that thebarrier metal film 102 and the wiring film existing in the viaholes 101A and thewiring trenches 101B remain respectively. Consequently, awiring 105 is formed in the viaholes 101A and thewiring trenches 101B. - In the present embodiment, since the wafer W is wetted and immersed in the plating solution while the
seed layer 103 and thesacrificial anode 7 are in the electrically connected status, the occurrence of voids which is caused by dissolution of a seed layer can be restrained, and the uniformity in a surface of the filmy thickness on theplating film 104 can be improved. That is to say, a reduction-reaction occurs on theseed layer 103 and an oxidization reaction occurs on thesacrificial anode 7, when the wafer W is wetted, and immersed in the plating solution while the wafer-W and thesacrificial anode 7 are in the electrically connected status, because thesacrificial anode 7 is composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing theseed layer 103. Therefore, it is possible to restrain the dissolution of theseed layer 103, so that it is possible to restrain the occurrence of voids. On the other hand, the reduction reaction occurs on theseed layer 103, and thereby theseed layer 103 is plated. However, it is possible to reduce the amount of plating applied with the wafer W compared to the case when the wafer W is wetted and immersed in the plating solution while a voltage being substantially the same as the voltage when plating, is applied between theseed layer 103 and theanode 5. Moreover, the amount of plating is even more reduced by making the contact area of thesacrificial anode 7 to the plating solution smaller. Therefore, the non-uniformity of the amount-of plating applied to the wafer W when the wafer W is wetted and immersed in the plating solution is restrained, so that it is possible to improve the uniformity in the surface of the film thickness on theplating film 104. - In the present embodiment, since the region where the wafer W is wetted and immersed and the region where the
sacrificial anode 7 is disposed are separated by the partition-wall 8, it is possible to restrain the precipitation of the dissolvedsacrificial anode 7 to the wafer W. Namely, when the wafer W is wetted and immersed in the plating solution while theseed layer 103 and thesacrificial anode 7 are in the electrically connected status, thesacrificial anode 7 may be dissolved into the plating solution depending on they composing material thereof. Here, if thesacrificial anode 7 is dissolved, the dissolved material may inhibit the plating on the wafer W. On the contrary, in the present embodiment, the region where the wafer W is wetted and immersed and the region where thesacrificial anode 7 is disposed, are separated by thepartition wall 8, and therefore it is possible to avoid the inhibition of the plating to the wafer W even when thesacrificial anode 7 is dissolved. - In the present embodiment, since the wafer W is plated after the electrical connection between the
seed layer 103 and thesacrificial anode 7 is disconnected, the uniformity in the surface of the film thickness on theplating film 104 can be improved. Namely, when the wafer W is plated by applying a voltage between theseed layer 103 and theanode 5 while theseed layer 103 and thesacrificial anode 7 are in the electrically connected status, it is possible that the electric field distribution may be in disorder. On the contrary, in the present embodiment, since the wafer W is plated after the electrical connection between theseed layer 103 and thesacrificial anode 7 is disconnected, the disorder of electric field distribution can be avoided. Therefore, the uniformity in the surface of the film thickness on theplating film 104 can be improved. - Besides, in the present embodiment, since the
sacrificial anode 7 is disposed outside of the region sandwiched by the wafer W and theanode 5, the electric field distribution is rare to be in disorder when the wafer W is plated. Consequently, the uniformity in the surface of the film thickness on theplating film 104 can be improved. - Hereinafter, an example will be explained. In the present examples a filled status of a plating is observed.
- In the present example, a
plating 7 apparatus described in the above first embodiment is used. A plating solution whose main constituent is aqueous copper sulfate solution is used, and a sacrificial anode composed of Zn is used. Besides, a wafer which is formed as follows is used. An oxide film of 100 nm thickness is formed on an Si substrate by a thermal oxidation, and thereafter an interlayer insulation film of approximately 1 μm thickness is formed on the oxide film by using a Chemical Vapor Deposition (CVD) method. Further, wiring trenches having 0.09 μm width and 300 nm depth are formed on the interlayer insulation film by Photo Engraving Process (PEP) and etching. After that, a barrier metal layer of 15 nm thickness composed of Ta is formed by using a sputtering method on the interlayer insulation film, and a seed layer of 80 nm thickness composed of Cu is formed on the barrier metal layer. Incidentally, these film thicknesses are values measured on the plane of the interlayer insulation film in which the wiring trenches are not formed. - The wafer is plated so that the plating is filled up to the half height of wiring trenches by using the above-described plating apparatus and wafer and so on, and the same method described in the first embodiment. The filled status of plating at the center and edge portions of the wafer at that time is observed.
- Incidentally, as a comparative example 1 to compare with the present example, the filled status of plating at the center and, edge portions of the wafer which is immersed to the plating solution while a voltage is not applied between the seed layer and the anode is also observed. Besides, as a comparative example 2, the filled, status of plating at the center and edge portions of the wafer which is immersed in the plating solution while a voltage being substantially the same as when plating, is applied between the seed layer and the anode is also observed.
- Results of the observation is described. Table 1 and Table 2 show the results-of the observation-according to the present example and comparative examples 1 and 2.
TABLE 1 COMPARATIVE COMPARATIVE EXAMPLE EXAMPLE 1 EXAMPLE 2 CENTER HALF FILLED HALF FILLED HALF FILLED EDGE HALF FILLED HALF FILLED FULLY FILLED -
TABLE 2 COMPARATIVE COMPARATIVE EXAMPLE EXAMPLE 1 EXAMPLE 2 CENTER WITHOUT VOID WITH VOID WITHOUT VOID EDGE WITHOUT VOID WITH VOID WITH VOID - As shown in Table 1, the platings are filled up to half height of the wiring trenches at both the center and edge portions of the wafer according to the comparative example 1. However, as shown in Table 2, voids occurred at the center and edge portions of the wafer according to the comparative example 1. It is conceivable that the voids occurred because the seed layer is dissolved.
- Besides, as shown in Table 1, the plating is filled up to half height of the wiring trenches at the center portion of the wafer according to the comparative example 2, but at the edge portion of the wafer, the wiring trenches are fully filled by the plating. Meanwhile, as shown in Table 2, voids occurred at the edge portions of the wafer according to the comparative example 2. It is conceivable that the voids occurred not because the seed layer is dissolved but because the plating is not applied under; the appropriate filling condition when the wafer is immersed in the plating solution.
- On the contrary, as shown in Table 1, the platings are filled up to half height of the wiring trenches at both the center and edge portions of the wafer according to the example. Besides, as shown in Table 2, no void occurred at the center and edge portions of the wafer according to the example.
- From these results, it is verified that when the wafer is immersed in the plating solution while the seed layer and the sacrificial anode is in electrically connected status, it is hard to occur the voids than the case when the wafer is immersed in the plating solution in the status that no voltage is applied between the seed layer and the anode, and also, the uniformity in the surface of the film thickness on the plating film can be improved than the case when the wafer is immersed in the plating solution while a voltage is applied between the seed layer and the anode.
- Hereinafter, a second embodiment will be described. In the present embodiment, the case when a sacrificial anode formed of carbon is used is explained.
FIG. 6 shows a schematic vertical cross-sectional view of a plating apparatus according to the present embodiment. - As it is the same as the first embodiment, a
sacrificial anode 7 is disposed in aplating solution tank 2. Thesacrificial anode 7 of the present embodiment is composed of carbon. Here, in the case when thesacrificial anode 7 composed of carbon is used, thesacrificial anode 7 is hardly dissolved even when a wafer W is immersed in a plating solution while aseed layer 103 and thesacrificial anode 7 are in an electrically connected status. Accordingly, when thesacrificial anode 7 composed of carbon is used, apartition wall 8 can be removed as shown inFIG. 6 because the dissolvedsacrificial anode 7 does not disturb the plating to the wafer W. - The present invention is not limited to the contents described in the above embodiments, and appropriate changes in the structure, the materials, the arrangement of each member, and so on may be made within a range not departing from the sprit of the present invention. In the above embodiments, the case that the wafer W is plated-while the wafer W is tilted relative to the
anode 5 is described, but, the wafer W can be plated while the wafer W is substantially in parallel with theanode 5. Further, in the above embodiments, the wafer W is held in the facedown manner, but the wafer W, can be held in a so-called face-up manner, in which the surface to be plated of the wafer W faces upward.
Claims (20)
1. A plating apparatus, comprising:
a plating solution tank configured to store a plating; solution;
a holder configured to hold a substrate on which a seed layer is formed in, said plating solution tank;
a first anode disposed in said plating solution tank, composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer, and electrically connectable to the seed layer of the substrate held by said holder; and
a second anode disposed in said plating solution tank, capable of applying a voltage between the seed layer of the substrate held by said holder.
2. The plating apparatus according to claim 1 , further comprising:
a partition wall or a membrane which is disposed in said plating solution tank, and separates the region where the substrate held by said holder is immersed in the plating solution-from the region where said first anode is disposed.
3. The plating apparatus according to claim 1 , wherein said first anode is composed of metal, metal oxide, or carbon.
4. The plating apparatus according to claim 3 , wherein the seed layer is composed of Cu, and said first anode is composed of Zn, Ta, oxides of those, or C.
5. The plating apparatus according to claim 1 , wherein said first anode is disposed outside of the region sandwiched by the substrate held by said holder and said second anode.
6. The plating apparatus according to claim 1 , wherein said first anode is formed to have a smaller contact area with the plating solution than a contact area of the substrate with the plating solution.
7. A plating method, comprising:
electrically connecting a first anode to a seed layer of a substrate,
wherein the first anode is disposed in a plating solution, and composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer;
wetting the substrate in the plating solution; and
plating the substrate by applying a voltage between the seed layer and a second anode disposed in the plating solution.
8. The plating method according to claim 7 , further comprising:
disconnecting the electrical connection between the first anode and the seed layer between said wetting the substrate in the plating solution and said plating the substrate.
9. The plating method according to claim 7 , wherein said wetting the substrate in the plating solution is performed while separating the region where the substrate is wetted in the plating solution from the region where the first anode is disposed by a partition wall or a membrane.
10. The plating method according to claim 7 , wherein the first anode is composed of metal, metal oxide, or carbon.
11. The plating method according to claim 10 , wherein the seed layer is composed of Cu, the first anode is composed of Zn, Ta, oxides of those, or C.
12. The plating method according to claim 7 , wherein the first-anode is disposed outside of the region sandwiched by the substrate and the second anode.
13. The plating method according to claim 7 , wherein the first anode has a smaller contact area with the plating solution than a contact area of the substrate with the plating solution.
14. A manufacturing method of a semiconductor device, comprising:
forming a seed layer on a substrate having a recessed portion on the surface, so as to be filled in a part of the recessed portion;
electrically connecting a first anode to the seed layer,
wherein the first anode is disposed in a plating solution, and composed of a more anodic material in its oxidation-reduction potential than the oxidation-reduction potential of a metal composing the seed layer;
wetting the substrate on which the first anode is electrically connected to the seed layer in the plating solution;
forming a plating film on the seed layer so as to be filled in the recessed portion, by applying a voltage between the seed layer and a second anode disposed in the plating solution; and
removing the plating film other than the one filled in the recessed portion and the seed layer other than the one filled in the recessed portion.
15. The manufacturing method according to claim 14 , further comprising:
disconnecting the electrical connection between the first anode and the seed layer, between said wetting the substrate in the plating solution and said forming the plating film.
16. The manufacturing method according to claim 14 , wherein said wetting the substrate in the plating solution is performed while separating the region where the substrate is wetted in the plating solution from the region where the first anode is disposed by a partition-wall or a membrane.
17. The manufacturing method according to claim 14 , wherein the first anode is composed of metal, metal oxide, or carbon.
18. The manufacturing method according to claim 17 , wherein the seed layer-is composed of Cu, the first anode is composed of Zn, Ta, oxides of those, or C.
19. The manufacturing method according to claim 14 , wherein the first anode is disposed outside of the region sandwiched by the substrate and the second anode.
20. The manufacturing method according to claim 14 , wherein the first anode has a smaller contact area with the plating solution than a contact area of the substrate with the plating solution.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPP2003-401773 | 2003-12-01 | ||
JP2003401773A JP2005163080A (en) | 2003-12-01 | 2003-12-01 | Plating apparatus and plating method |
Publications (1)
Publication Number | Publication Date |
---|---|
US20050145500A1 true US20050145500A1 (en) | 2005-07-07 |
Family
ID=34708658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/998,970 Abandoned US20050145500A1 (en) | 2003-12-01 | 2004-11-30 | Plating apparatus, plating method, and manufacturing method of semiconductor device |
Country Status (4)
Country | Link |
---|---|
US (1) | US20050145500A1 (en) |
JP (1) | JP2005163080A (en) |
CN (1) | CN100342062C (en) |
TW (1) | TWI250552B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060237319A1 (en) * | 2005-04-22 | 2006-10-26 | Akira Furuya | Planting process and manufacturing process for semiconductor device thereby, and plating apparatus |
US20070134132A1 (en) * | 2005-12-08 | 2007-06-14 | Fujifilm Corporation | Plating-thickness monitor apparatus and plating-stopping apparatus |
US20080121526A1 (en) * | 2006-11-27 | 2008-05-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Adjustable anode assembly for a substrate wet processing apparatus |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4816052B2 (en) * | 2005-12-13 | 2011-11-16 | 東京エレクトロン株式会社 | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |
JP7194305B1 (en) | 2022-07-01 | 2022-12-21 | 株式会社荏原製作所 | Substrate holder, plating equipment, and plating method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6425991B1 (en) * | 2000-10-02 | 2002-07-30 | Advanced Micro Devices, Inc. | Plating system with secondary ring anode for a semiconductor wafer |
US6527920B1 (en) * | 2000-05-10 | 2003-03-04 | Novellus Systems, Inc. | Copper electroplating apparatus |
US6551483B1 (en) * | 2000-02-29 | 2003-04-22 | Novellus Systems, Inc. | Method for potential controlled electroplating of fine patterns on semiconductor wafers |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3191759B2 (en) * | 1998-02-20 | 2001-07-23 | 日本電気株式会社 | Method for manufacturing semiconductor device |
JP2002097595A (en) * | 2000-09-25 | 2002-04-02 | Hitachi Ltd | Method for manufacturing semiconductor device |
US6413390B1 (en) * | 2000-10-02 | 2002-07-02 | Advanced Micro Devices, Inc. | Plating system with remote secondary anode for semiconductor manufacturing |
JP2003268591A (en) * | 2002-03-12 | 2003-09-25 | Ebara Corp | Method and apparatus for electrolytic treatment |
-
2003
- 2003-12-01 JP JP2003401773A patent/JP2005163080A/en active Pending
-
2004
- 2004-11-25 TW TW093136334A patent/TWI250552B/en not_active IP Right Cessation
- 2004-11-30 CN CNB2004100965542A patent/CN100342062C/en not_active Expired - Fee Related
- 2004-11-30 US US10/998,970 patent/US20050145500A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6551483B1 (en) * | 2000-02-29 | 2003-04-22 | Novellus Systems, Inc. | Method for potential controlled electroplating of fine patterns on semiconductor wafers |
US6562204B1 (en) * | 2000-02-29 | 2003-05-13 | Novellus Systems, Inc. | Apparatus for potential controlled electroplating of fine patterns on semiconductor wafers |
US6527920B1 (en) * | 2000-05-10 | 2003-03-04 | Novellus Systems, Inc. | Copper electroplating apparatus |
US6425991B1 (en) * | 2000-10-02 | 2002-07-30 | Advanced Micro Devices, Inc. | Plating system with secondary ring anode for a semiconductor wafer |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060237319A1 (en) * | 2005-04-22 | 2006-10-26 | Akira Furuya | Planting process and manufacturing process for semiconductor device thereby, and plating apparatus |
US20110155578A1 (en) * | 2005-04-22 | 2011-06-30 | Renesas Electronics Corporation | Plating process and manufacturing process for semiconductor device thereby |
US8512540B2 (en) * | 2005-04-22 | 2013-08-20 | Renesas Electronics Corporation | Plating process and manufacturing process for semiconductor device thereby |
US20070134132A1 (en) * | 2005-12-08 | 2007-06-14 | Fujifilm Corporation | Plating-thickness monitor apparatus and plating-stopping apparatus |
US20080121526A1 (en) * | 2006-11-27 | 2008-05-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Adjustable anode assembly for a substrate wet processing apparatus |
US8101052B2 (en) * | 2006-11-27 | 2012-01-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Adjustable anode assembly for a substrate wet processing apparatus |
Also Published As
Publication number | Publication date |
---|---|
TWI250552B (en) | 2006-03-01 |
CN100342062C (en) | 2007-10-10 |
JP2005163080A (en) | 2005-06-23 |
TW200529286A (en) | 2005-09-01 |
CN1624208A (en) | 2005-06-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7129165B2 (en) | Method and structure to improve reliability of copper interconnects | |
US8691687B2 (en) | Superfilled metal contact vias for semiconductor devices | |
US7850836B2 (en) | Method of electro-depositing a conductive material in at least one through-hole via of a semiconductor substrate | |
EP2611950B1 (en) | Process for electrodeposition of copper chip to chip chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv), with heated substrate and cooled electrolyte | |
JP3116897B2 (en) | Fine wiring formation method | |
JP2008502806A (en) | Barrier layer surface treatment method enabling direct copper plating on barrier metal | |
JP2006525429A (en) | Method and apparatus for reducing defects in wet processing layer | |
US20040154931A1 (en) | Polishing liquid, polishing method and polishing apparatus | |
WO2002059398A2 (en) | Plating apparatus and method | |
JP2010503216A (en) | Method and apparatus for surface modification of a workpiece to selectively deposit material | |
US20120145552A1 (en) | Electroplating method | |
US20060086618A1 (en) | Method and apparatus for forming interconnects | |
CN106328583B (en) | CVD metal seed layer | |
KR20010103696A (en) | Process for semiconductor device fabrication having copper interconnects | |
KR100859899B1 (en) | Electrochemical methods for polishing copper films on semiconductor substrates | |
US20050145500A1 (en) | Plating apparatus, plating method, and manufacturing method of semiconductor device | |
US7901550B2 (en) | Plating apparatus | |
CN101074485B (en) | Method of manufacturing electronic component | |
US6677218B2 (en) | Method for filling trenches in integrated semiconductor circuits | |
CN110690166B (en) | Forming method of contact hole structure and contact hole structure | |
TW202208694A (en) | Electrolyte and deposition of a copper barrier layer in a damascene process | |
US9543199B2 (en) | Long-term heat treated integrated circuit arrangements and methods for producing the same | |
KR20230043153A (en) | Manufacturing method of metal-filled microstructure | |
US6180526B1 (en) | Method for improving conformity of a conductive layer in a semiconductor device | |
JP2010121168A (en) | Plating apparatus, plating method, and method for manufacturing semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: KABUSHIKI KAISHA TOSHIBA, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TOYODA, HIROSHI;MATSUI, YOSHITAKA;YAHIRO, KAZUYUKI;AND OTHERS;REEL/FRAME:016371/0801 Effective date: 20041124 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |