KR100747132B1 - 반도체 제조를 위한 원격의 제 2 애노드를 갖는 도금 시스템 - Google Patents

반도체 제조를 위한 원격의 제 2 애노드를 갖는 도금 시스템 Download PDF

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Publication number
KR100747132B1
KR100747132B1 KR1020037004726A KR20037004726A KR100747132B1 KR 100747132 B1 KR100747132 B1 KR 100747132B1 KR 1020037004726 A KR1020037004726 A KR 1020037004726A KR 20037004726 A KR20037004726 A KR 20037004726A KR 100747132 B1 KR100747132 B1 KR 100747132B1
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South Korea
Prior art keywords
plating
copper
anode
plating solution
chamber
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020037004726A
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English (en)
Korean (ko)
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KR20040007399A (ko
Inventor
트랜민쿠오크
Original Assignee
어드밴스드 마이크로 디바이시즈, 인코포레이티드
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Application filed by 어드밴스드 마이크로 디바이시즈, 인코포레이티드 filed Critical 어드밴스드 마이크로 디바이시즈, 인코포레이티드
Publication of KR20040007399A publication Critical patent/KR20040007399A/ko
Application granted granted Critical
Publication of KR100747132B1 publication Critical patent/KR100747132B1/ko
Assigned to 글로벌파운드리즈 인크. reassignment 글로벌파운드리즈 인크. 권리의 전부이전등록 Assignors: 어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating

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  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020037004726A 2000-10-02 2001-06-04 반도체 제조를 위한 원격의 제 2 애노드를 갖는 도금 시스템 Expired - Fee Related KR100747132B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/678,503 US6413390B1 (en) 2000-10-02 2000-10-02 Plating system with remote secondary anode for semiconductor manufacturing
US09/678,503 2000-10-02
PCT/US2001/018229 WO2002029875A2 (en) 2000-10-02 2001-06-04 Plating system with remote secondary anode for semiconductor manufacturing

Publications (2)

Publication Number Publication Date
KR20040007399A KR20040007399A (ko) 2004-01-24
KR100747132B1 true KR100747132B1 (ko) 2007-08-09

Family

ID=24723054

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020037004726A Expired - Fee Related KR100747132B1 (ko) 2000-10-02 2001-06-04 반도체 제조를 위한 원격의 제 2 애노드를 갖는 도금 시스템

Country Status (9)

Country Link
US (1) US6413390B1 (https=)
EP (1) EP1323186B1 (https=)
JP (1) JP2004510888A (https=)
KR (1) KR100747132B1 (https=)
CN (1) CN1333442C (https=)
AU (1) AU2001275274A1 (https=)
DE (1) DE60140305D1 (https=)
TW (1) TW525245B (https=)
WO (1) WO2002029875A2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649034B1 (en) * 2001-06-27 2003-11-18 Advanced Micro Devices, Inc. Electro-chemical metal alloying for semiconductor manufacturing
JP4014827B2 (ja) * 2001-07-25 2007-11-28 シャープ株式会社 メッキ処理装置
AU2002343330A1 (en) * 2001-08-31 2003-03-10 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
JP2005163080A (ja) * 2003-12-01 2005-06-23 Toshiba Corp めっき装置及びめっき方法
DE102005014748B4 (de) * 2005-03-31 2007-02-08 Advanced Micro Devices, Inc., Sunnyvale Technik zum elektrochemischen Abscheiden einer Legierung mit chemischer Ordnung
CN102492971B (zh) * 2011-12-28 2014-09-17 无锡科硅电子技术有限公司 用于半导体基片表面进行电镀的装置
CN102560587B (zh) * 2012-02-08 2015-03-18 南通富士通微电子股份有限公司 电镀装置
CN103422150A (zh) * 2012-05-22 2013-12-04 泰州宏瑞新材料有限责任公司 用于电镀的重金属离子浓度调节槽及电镀装置
JP5692268B2 (ja) * 2013-03-25 2015-04-01 トヨタ自動車株式会社 金属被膜の成膜装置および成膜方法
CN114929943A (zh) * 2020-01-09 2022-08-19 朗姆研究公司 半导体金属互连件的高速3d金属打印

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990029870A (ko) * 1997-09-17 1999-04-26 마에다 시게루 기판도금장치
KR20000017630A (ko) * 1998-08-31 2000-03-25 가네꼬 히사시 반도체 장치의 제조 방법, 그를 위한 도금 장치 및 스퍼터링장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3144128C1 (de) * 1981-11-06 1983-06-09 Bayerische Motoren Werke AG, 8000 München Vorrichtung zum galvanischen Abscheiden eines Metalls auf einem metallischen Werkstueck
GB8911566D0 (en) * 1989-05-19 1989-07-05 Sun Ind Coatings Plating system
US5368711A (en) * 1990-08-01 1994-11-29 Poris; Jaime Selective metal electrodeposition process and apparatus
JPH04284691A (ja) * 1991-03-13 1992-10-09 Arumetsukusu:Kk プリント配線板の電気めっき方法
JPH04362199A (ja) * 1991-06-06 1992-12-15 Nec Corp 電気めっき装置
JPH05339800A (ja) * 1992-06-09 1993-12-21 Nec Corp 可溶性アノードと不溶性アノードを持つ噴流めっき装置
CN1168854C (zh) * 1997-09-30 2004-09-29 塞米图尔公司 用于电镀半导体晶片的系统、装置和方法
US6024856A (en) * 1997-10-10 2000-02-15 Enthone-Omi, Inc. Copper metallization of silicon wafers using insoluble anodes
US6197182B1 (en) * 1999-07-07 2001-03-06 Technic Inc. Apparatus and method for plating wafers, substrates and other articles

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990029870A (ko) * 1997-09-17 1999-04-26 마에다 시게루 기판도금장치
KR20000017630A (ko) * 1998-08-31 2000-03-25 가네꼬 히사시 반도체 장치의 제조 방법, 그를 위한 도금 장치 및 스퍼터링장치

Also Published As

Publication number Publication date
EP1323186A2 (en) 2003-07-02
CN1529903A (zh) 2004-09-15
WO2002029875A2 (en) 2002-04-11
KR20040007399A (ko) 2004-01-24
WO2002029875A3 (en) 2002-08-15
US6413390B1 (en) 2002-07-02
JP2004510888A (ja) 2004-04-08
CN1333442C (zh) 2007-08-22
TW525245B (en) 2003-03-21
EP1323186B1 (en) 2009-10-28
AU2001275274A1 (en) 2002-04-15
DE60140305D1 (de) 2009-12-10

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