CN1529903A - 半导体工艺用的具有远程第二阳极的电镀系统 - Google Patents
半导体工艺用的具有远程第二阳极的电镀系统 Download PDFInfo
- Publication number
- CN1529903A CN1529903A CNA018167659A CN01816765A CN1529903A CN 1529903 A CN1529903 A CN 1529903A CN A018167659 A CNA018167659 A CN A018167659A CN 01816765 A CN01816765 A CN 01816765A CN 1529903 A CN1529903 A CN 1529903A
- Authority
- CN
- China
- Prior art keywords
- electroplating
- copper
- cavity
- electroplating solution
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000007747 plating Methods 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title description 2
- 238000009713 electroplating Methods 0.000 claims abstract description 78
- 239000010949 copper Substances 0.000 claims description 36
- 229910052802 copper Inorganic materials 0.000 claims description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 27
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 11
- 229910001431 copper ion Inorganic materials 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 238000000605 extraction Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 150000001879 copper Chemical class 0.000 claims 8
- 238000005086 pumping Methods 0.000 claims 4
- 239000000284 extract Chemical class 0.000 claims 1
- 229910021645 metal ion Inorganic materials 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 abstract 2
- 238000005516 engineering process Methods 0.000 description 13
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000002385 metal-ion deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- UPIXZLGONUBZLK-UHFFFAOYSA-N platinum Chemical compound [Pt].[Pt] UPIXZLGONUBZLK-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/678,503 | 2000-10-02 | ||
US09/678,503 US6413390B1 (en) | 2000-10-02 | 2000-10-02 | Plating system with remote secondary anode for semiconductor manufacturing |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1529903A true CN1529903A (zh) | 2004-09-15 |
CN1333442C CN1333442C (zh) | 2007-08-22 |
Family
ID=24723054
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018167659A Expired - Fee Related CN1333442C (zh) | 2000-10-02 | 2001-06-04 | 半导体工艺用的具有远程第二阳极的电镀系统 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6413390B1 (zh) |
EP (1) | EP1323186B1 (zh) |
JP (1) | JP2004510888A (zh) |
KR (1) | KR100747132B1 (zh) |
CN (1) | CN1333442C (zh) |
AU (1) | AU2001275274A1 (zh) |
DE (1) | DE60140305D1 (zh) |
TW (1) | TW525245B (zh) |
WO (1) | WO2002029875A2 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102492971A (zh) * | 2011-12-28 | 2012-06-13 | 无锡科硅电子技术有限公司 | 用于半导体基片表面进行电镀的装置 |
CN102560587A (zh) * | 2012-02-08 | 2012-07-11 | 南通富士通微电子股份有限公司 | 电镀装置 |
CN103422150A (zh) * | 2012-05-22 | 2013-12-04 | 泰州宏瑞新材料有限责任公司 | 用于电镀的重金属离子浓度调节槽及电镀装置 |
CN105102691A (zh) * | 2013-03-25 | 2015-11-25 | 丰田自动车株式会社 | 金属被膜的成膜装置和成膜方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6649034B1 (en) * | 2001-06-27 | 2003-11-18 | Advanced Micro Devices, Inc. | Electro-chemical metal alloying for semiconductor manufacturing |
JP4014827B2 (ja) * | 2001-07-25 | 2007-11-28 | シャープ株式会社 | メッキ処理装置 |
AU2002343330A1 (en) * | 2001-08-31 | 2003-03-10 | Semitool, Inc. | Apparatus and methods for electrochemical processing of microelectronic workpieces |
JP2005163080A (ja) * | 2003-12-01 | 2005-06-23 | Toshiba Corp | めっき装置及びめっき方法 |
DE102005014748B4 (de) * | 2005-03-31 | 2007-02-08 | Advanced Micro Devices, Inc., Sunnyvale | Technik zum elektrochemischen Abscheiden einer Legierung mit chemischer Ordnung |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3144128C1 (de) * | 1981-11-06 | 1983-06-09 | Bayerische Motoren Werke AG, 8000 München | Vorrichtung zum galvanischen Abscheiden eines Metalls auf einem metallischen Werkstueck |
GB8911566D0 (en) * | 1989-05-19 | 1989-07-05 | Sun Ind Coatings | Plating system |
US5368711A (en) * | 1990-08-01 | 1994-11-29 | Poris; Jaime | Selective metal electrodeposition process and apparatus |
JPH04284691A (ja) * | 1991-03-13 | 1992-10-09 | Arumetsukusu:Kk | プリント配線板の電気めっき方法 |
JPH04362199A (ja) * | 1991-06-06 | 1992-12-15 | Nec Corp | 電気めっき装置 |
JPH05339800A (ja) * | 1992-06-09 | 1993-12-21 | Nec Corp | 可溶性アノードと不溶性アノードを持つ噴流めっき装置 |
TW405158B (en) * | 1997-09-17 | 2000-09-11 | Ebara Corp | Plating apparatus for semiconductor wafer processing |
WO1999016936A1 (en) * | 1997-09-30 | 1999-04-08 | Semitool, Inc. | Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations |
US6024856A (en) * | 1997-10-10 | 2000-02-15 | Enthone-Omi, Inc. | Copper metallization of silicon wafers using insoluble anodes |
JP3187011B2 (ja) * | 1998-08-31 | 2001-07-11 | 日本電気株式会社 | 半導体装置の製造方法 |
US6197182B1 (en) * | 1999-07-07 | 2001-03-06 | Technic Inc. | Apparatus and method for plating wafers, substrates and other articles |
-
2000
- 2000-10-02 US US09/678,503 patent/US6413390B1/en not_active Expired - Fee Related
-
2001
- 2001-06-04 CN CNB018167659A patent/CN1333442C/zh not_active Expired - Fee Related
- 2001-06-04 EP EP01941966A patent/EP1323186B1/en not_active Expired - Lifetime
- 2001-06-04 JP JP2002533357A patent/JP2004510888A/ja active Pending
- 2001-06-04 WO PCT/US2001/018229 patent/WO2002029875A2/en active Application Filing
- 2001-06-04 KR KR1020037004726A patent/KR100747132B1/ko not_active IP Right Cessation
- 2001-06-04 DE DE60140305T patent/DE60140305D1/de not_active Expired - Lifetime
- 2001-06-04 AU AU2001275274A patent/AU2001275274A1/en not_active Abandoned
- 2001-10-02 TW TW090124242A patent/TW525245B/zh not_active IP Right Cessation
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102492971A (zh) * | 2011-12-28 | 2012-06-13 | 无锡科硅电子技术有限公司 | 用于半导体基片表面进行电镀的装置 |
CN102492971B (zh) * | 2011-12-28 | 2014-09-17 | 无锡科硅电子技术有限公司 | 用于半导体基片表面进行电镀的装置 |
CN102560587A (zh) * | 2012-02-08 | 2012-07-11 | 南通富士通微电子股份有限公司 | 电镀装置 |
CN102560587B (zh) * | 2012-02-08 | 2015-03-18 | 南通富士通微电子股份有限公司 | 电镀装置 |
CN103422150A (zh) * | 2012-05-22 | 2013-12-04 | 泰州宏瑞新材料有限责任公司 | 用于电镀的重金属离子浓度调节槽及电镀装置 |
CN105102691A (zh) * | 2013-03-25 | 2015-11-25 | 丰田自动车株式会社 | 金属被膜的成膜装置和成膜方法 |
CN105102691B (zh) * | 2013-03-25 | 2018-02-09 | 丰田自动车株式会社 | 金属被膜的成膜装置和成膜方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1323186A2 (en) | 2003-07-02 |
DE60140305D1 (de) | 2009-12-10 |
EP1323186B1 (en) | 2009-10-28 |
KR100747132B1 (ko) | 2007-08-09 |
TW525245B (en) | 2003-03-21 |
AU2001275274A1 (en) | 2002-04-15 |
JP2004510888A (ja) | 2004-04-08 |
KR20040007399A (ko) | 2004-01-24 |
CN1333442C (zh) | 2007-08-22 |
WO2002029875A3 (en) | 2002-08-15 |
WO2002029875A2 (en) | 2002-04-11 |
US6413390B1 (en) | 2002-07-02 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: GLOBALFOUNDRIES Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC. Effective date: 20100705 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: CALIFORNIA, THE UNITED STATES TO: CAYMAN ISLANDS, BRITISH |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100705 Address after: Grand Cayman, Cayman Islands Patentee after: Globalfoundries Semiconductor Inc. Address before: American California Patentee before: Advanced Micro Devices Inc. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070822 Termination date: 20160604 |