DE60140305D1 - Plattierungssystem mit abgesetzter sekundäranode zur halbleiterfabrikation - Google Patents

Plattierungssystem mit abgesetzter sekundäranode zur halbleiterfabrikation

Info

Publication number
DE60140305D1
DE60140305D1 DE60140305T DE60140305T DE60140305D1 DE 60140305 D1 DE60140305 D1 DE 60140305D1 DE 60140305 T DE60140305 T DE 60140305T DE 60140305 T DE60140305 T DE 60140305T DE 60140305 D1 DE60140305 D1 DE 60140305D1
Authority
DE
Germany
Prior art keywords
semiconductor fabrication
plating system
secondary anode
removed secondary
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60140305T
Other languages
German (de)
English (en)
Inventor
Minh Quoc Tran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE60140305D1 publication Critical patent/DE60140305D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47Electrolytic deposition, i.e. electroplating; Electroless plating
DE60140305T 2000-10-02 2001-06-04 Plattierungssystem mit abgesetzter sekundäranode zur halbleiterfabrikation Expired - Lifetime DE60140305D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/678,503 US6413390B1 (en) 2000-10-02 2000-10-02 Plating system with remote secondary anode for semiconductor manufacturing
PCT/US2001/018229 WO2002029875A2 (en) 2000-10-02 2001-06-04 Plating system with remote secondary anode for semiconductor manufacturing

Publications (1)

Publication Number Publication Date
DE60140305D1 true DE60140305D1 (de) 2009-12-10

Family

ID=24723054

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60140305T Expired - Lifetime DE60140305D1 (de) 2000-10-02 2001-06-04 Plattierungssystem mit abgesetzter sekundäranode zur halbleiterfabrikation

Country Status (9)

Country Link
US (1) US6413390B1 (https=)
EP (1) EP1323186B1 (https=)
JP (1) JP2004510888A (https=)
KR (1) KR100747132B1 (https=)
CN (1) CN1333442C (https=)
AU (1) AU2001275274A1 (https=)
DE (1) DE60140305D1 (https=)
TW (1) TW525245B (https=)
WO (1) WO2002029875A2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649034B1 (en) * 2001-06-27 2003-11-18 Advanced Micro Devices, Inc. Electro-chemical metal alloying for semiconductor manufacturing
JP4014827B2 (ja) * 2001-07-25 2007-11-28 シャープ株式会社 メッキ処理装置
AU2002343330A1 (en) * 2001-08-31 2003-03-10 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
JP2005163080A (ja) * 2003-12-01 2005-06-23 Toshiba Corp めっき装置及びめっき方法
DE102005014748B4 (de) * 2005-03-31 2007-02-08 Advanced Micro Devices, Inc., Sunnyvale Technik zum elektrochemischen Abscheiden einer Legierung mit chemischer Ordnung
CN102492971B (zh) * 2011-12-28 2014-09-17 无锡科硅电子技术有限公司 用于半导体基片表面进行电镀的装置
CN102560587B (zh) * 2012-02-08 2015-03-18 南通富士通微电子股份有限公司 电镀装置
CN103422150A (zh) * 2012-05-22 2013-12-04 泰州宏瑞新材料有限责任公司 用于电镀的重金属离子浓度调节槽及电镀装置
JP5692268B2 (ja) * 2013-03-25 2015-04-01 トヨタ自動車株式会社 金属被膜の成膜装置および成膜方法
CN114929943A (zh) * 2020-01-09 2022-08-19 朗姆研究公司 半导体金属互连件的高速3d金属打印

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3144128C1 (de) * 1981-11-06 1983-06-09 Bayerische Motoren Werke AG, 8000 München Vorrichtung zum galvanischen Abscheiden eines Metalls auf einem metallischen Werkstueck
GB8911566D0 (en) * 1989-05-19 1989-07-05 Sun Ind Coatings Plating system
US5368711A (en) * 1990-08-01 1994-11-29 Poris; Jaime Selective metal electrodeposition process and apparatus
JPH04284691A (ja) * 1991-03-13 1992-10-09 Arumetsukusu:Kk プリント配線板の電気めっき方法
JPH04362199A (ja) * 1991-06-06 1992-12-15 Nec Corp 電気めっき装置
JPH05339800A (ja) * 1992-06-09 1993-12-21 Nec Corp 可溶性アノードと不溶性アノードを持つ噴流めっき装置
TW405158B (en) * 1997-09-17 2000-09-11 Ebara Corp Plating apparatus for semiconductor wafer processing
CN1168854C (zh) * 1997-09-30 2004-09-29 塞米图尔公司 用于电镀半导体晶片的系统、装置和方法
US6024856A (en) * 1997-10-10 2000-02-15 Enthone-Omi, Inc. Copper metallization of silicon wafers using insoluble anodes
JP3187011B2 (ja) * 1998-08-31 2001-07-11 日本電気株式会社 半導体装置の製造方法
US6197182B1 (en) * 1999-07-07 2001-03-06 Technic Inc. Apparatus and method for plating wafers, substrates and other articles

Also Published As

Publication number Publication date
EP1323186A2 (en) 2003-07-02
CN1529903A (zh) 2004-09-15
WO2002029875A2 (en) 2002-04-11
KR20040007399A (ko) 2004-01-24
KR100747132B1 (ko) 2007-08-09
WO2002029875A3 (en) 2002-08-15
US6413390B1 (en) 2002-07-02
JP2004510888A (ja) 2004-04-08
CN1333442C (zh) 2007-08-22
TW525245B (en) 2003-03-21
EP1323186B1 (en) 2009-10-28
AU2001275274A1 (en) 2002-04-15

Similar Documents

Publication Publication Date Title
DE60128430D1 (de) Nichtwässrige elektrolytische Sekundärzellen
DE60239408D1 (de) Mehrprojektorsmosaic mit automatischer positionierung
DE60130586D1 (de) Speicherzelle
MXPA03001511A (es) Imidazol-5-il-2-amino-pirimidinas como agentes para la inhibicion de la proliferacion celular.
NO20005753D0 (no) Undersjöisk transformator-dirstribusjonssystem
DE60238871D1 (de) Waferpositionierungsverfahren
DE60228152D1 (de) Brennstoffzellensystem
DK1211361T3 (da) Momentmodstående stropforbindelse
DK1366144T3 (da) Anordning til fremstilling af celler
EP1423223A4 (en) SHOCK LOCK CHUCK
DE60141669D1 (de) Sekundärzellen mit Polabdichtungsstruktur
DE60237769D1 (de) Nichtwässrige-elektrolyt-sekundärzelle
NO20012607L (no) Multi-lags katodestrukturer
DE60229526D1 (de) Spannfutter mit einziehfunktion
EP1383183A4 (en) SECONDARY BATTERY
DE60128289D1 (de) Schaltung zur Pegelstellung
DE50115410D1 (de) Vakuumanlage mit koppelbarem Werkstückträger
DE50115444D1 (de) Photovoltaische zelle
DE60140305D1 (de) Plattierungssystem mit abgesetzter sekundäranode zur halbleiterfabrikation
DE60015271D1 (de) Schaltungsanordnung zur parallel/seriell-wandlung
DE60216555D1 (de) Zellumschaltungsverfahren
DE60121381D1 (de) Nichtwässrige-Elektrolyt Sekundärbatterie
DE10084996T1 (de) Lottragender Wafer zur Verwendung bei Lötvorgängen
DE50202713D1 (de) Halbleiteranordnung zur strommessung
DE50212755D1 (de) Bohrfutter

Legal Events

Date Code Title Description
8364 No opposition during term of opposition