JP2004510888A - 半導体製造のための遠隔第２アノードを備えるめっき装置 - Google Patents

半導体製造のための遠隔第２アノードを備えるめっき装置 Download PDF

Info

Publication number
JP2004510888A
JP2004510888A JP2002533357A JP2002533357A JP2004510888A JP 2004510888 A JP2004510888 A JP 2004510888A JP 2002533357 A JP2002533357 A JP 2002533357A JP 2002533357 A JP2002533357 A JP 2002533357A JP 2004510888 A JP2004510888 A JP 2004510888A
Authority
JP
Japan
Prior art keywords
plating
copper
anode
chamber
plating solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002533357A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004510888A5 (https=
Inventor
トラン，ミン・コック
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2004510888A publication Critical patent/JP2004510888A/ja
Publication of JP2004510888A5 publication Critical patent/JP2004510888A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating

Landscapes

  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2002533357A 2000-10-02 2001-06-04 半導体製造のための遠隔第２アノードを備えるめっき装置 Pending JP2004510888A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/678,503 US6413390B1 (en) 2000-10-02 2000-10-02 Plating system with remote secondary anode for semiconductor manufacturing
PCT/US2001/018229 WO2002029875A2 (en) 2000-10-02 2001-06-04 Plating system with remote secondary anode for semiconductor manufacturing

Publications (2)

Publication Number Publication Date
JP2004510888A true JP2004510888A (ja) 2004-04-08
JP2004510888A5 JP2004510888A5 (https=) 2008-06-26

Family

ID=24723054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002533357A Pending JP2004510888A (ja) 2000-10-02 2001-06-04 半導体製造のための遠隔第２アノードを備えるめっき装置

Country Status (9)

Country Link
US (1) US6413390B1 (https=)
EP (1) EP1323186B1 (https=)
JP (1) JP2004510888A (https=)
KR (1) KR100747132B1 (https=)
CN (1) CN1333442C (https=)
AU (1) AU2001275274A1 (https=)
DE (1) DE60140305D1 (https=)
TW (1) TW525245B (https=)
WO (1) WO2002029875A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023510255A (ja) * 2020-01-09 2023-03-13 ラム リサーチ コーポレーション 半導体金属配線の高速３ｄ金属印刷

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649034B1 (en) * 2001-06-27 2003-11-18 Advanced Micro Devices, Inc. Electro-chemical metal alloying for semiconductor manufacturing
JP4014827B2 (ja) * 2001-07-25 2007-11-28 シャープ株式会社 メッキ処理装置
AU2002343330A1 (en) * 2001-08-31 2003-03-10 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
JP2005163080A (ja) * 2003-12-01 2005-06-23 Toshiba Corp めっき装置及びめっき方法
DE102005014748B4 (de) * 2005-03-31 2007-02-08 Advanced Micro Devices, Inc., Sunnyvale Technik zum elektrochemischen Abscheiden einer Legierung mit chemischer Ordnung
CN102492971B (zh) * 2011-12-28 2014-09-17 无锡科硅电子技术有限公司 用于半导体基片表面进行电镀的装置
CN102560587B (zh) * 2012-02-08 2015-03-18 南通富士通微电子股份有限公司 电镀装置
CN103422150A (zh) * 2012-05-22 2013-12-04 泰州宏瑞新材料有限责任公司 用于电镀的重金属离子浓度调节槽及电镀装置
JP5692268B2 (ja) * 2013-03-25 2015-04-01 トヨタ自動車株式会社 金属被膜の成膜装置および成膜方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05339800A (ja) * 1992-06-09 1993-12-21 Nec Corp 可溶性アノードと不溶性アノードを持つ噴流めっき装置
WO1999019544A1 (en) * 1997-10-10 1999-04-22 Enthone-Omi, Inc. Copper metallization of silicon wafers using insoluble anodes

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3144128C1 (de) * 1981-11-06 1983-06-09 Bayerische Motoren Werke AG, 8000 München Vorrichtung zum galvanischen Abscheiden eines Metalls auf einem metallischen Werkstueck
GB8911566D0 (en) * 1989-05-19 1989-07-05 Sun Ind Coatings Plating system
US5368711A (en) * 1990-08-01 1994-11-29 Poris; Jaime Selective metal electrodeposition process and apparatus
JPH04284691A (ja) * 1991-03-13 1992-10-09 Arumetsukusu:Kk プリント配線板の電気めっき方法
JPH04362199A (ja) * 1991-06-06 1992-12-15 Nec Corp 電気めっき装置
TW405158B (en) * 1997-09-17 2000-09-11 Ebara Corp Plating apparatus for semiconductor wafer processing
CN1168854C (zh) * 1997-09-30 2004-09-29 塞米图尔公司 用于电镀半导体晶片的系统、装置和方法
JP3187011B2 (ja) * 1998-08-31 2001-07-11 日本電気株式会社 半導体装置の製造方法
US6197182B1 (en) * 1999-07-07 2001-03-06 Technic Inc. Apparatus and method for plating wafers, substrates and other articles

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05339800A (ja) * 1992-06-09 1993-12-21 Nec Corp 可溶性アノードと不溶性アノードを持つ噴流めっき装置
WO1999019544A1 (en) * 1997-10-10 1999-04-22 Enthone-Omi, Inc. Copper metallization of silicon wafers using insoluble anodes

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023510255A (ja) * 2020-01-09 2023-03-13 ラム リサーチ コーポレーション 半導体金属配線の高速３ｄ金属印刷
JP7768883B2 (ja) 2020-01-09 2025-11-12 ラム リサーチ コーポレーション 半導体金属配線の高速３ｄ金属印刷
US12601080B2 (en) 2020-01-09 2026-04-14 Lam Research Corporation High-speed 3D metal printing of semiconductor metal interconnects

Also Published As

Publication number Publication date
EP1323186A2 (en) 2003-07-02
CN1529903A (zh) 2004-09-15
WO2002029875A2 (en) 2002-04-11
KR20040007399A (ko) 2004-01-24
KR100747132B1 (ko) 2007-08-09
WO2002029875A3 (en) 2002-08-15
US6413390B1 (en) 2002-07-02
CN1333442C (zh) 2007-08-22
TW525245B (en) 2003-03-21
EP1323186B1 (en) 2009-10-28
AU2001275274A1 (en) 2002-04-15
DE60140305D1 (de) 2009-12-10

Similar Documents

Publication Publication Date Title
JP5780935B2 (ja) 半導体ウェーハをメッキする装置及び方法
JP2005539369A (ja) 無電解堆積装置
US20220415710A1 (en) Interconnect structure with selective electroplated via fill
JP2004510888A (ja) 半導体製造のための遠隔第２アノードを備えるめっき装置
US20050022745A1 (en) Electroless plating method, electroless plating device, and production method and production device of semiconductor device
US6544391B1 (en) Reactor for electrochemically processing a microelectronic workpiece including improved electrode assembly
US6793794B2 (en) Substrate plating apparatus and method
US6425991B1 (en) Plating system with secondary ring anode for a semiconductor wafer
US20180266001A1 (en) Layer-by-layer deposition using hydrogen
JP7741097B2 (ja) ウエハエッジにおける材料特性を維持するためのリップシールエッジエクスクルージョン処理
US6402909B1 (en) Plating system with shielded secondary anode for semiconductor manufacturing
CN111936675B (zh) 具有惰性和活性阳极的电镀系统
CN114502778A (zh) 用于防止唇形密封件镀出的晶片屏蔽
US7252750B2 (en) Dual contact ring and method for metal ECP process
US6649034B1 (en) Electro-chemical metal alloying for semiconductor manufacturing
JP2000256896A (ja) めっき装置
US20050121329A1 (en) Thrust pad assembly for ECP system
US20250333845A1 (en) Conformal copper deposition on thin liner layer
US20060054508A1 (en) Process for rendering metal corrosion-resistant in electrochemical metal deposition
JP2001007051A (ja) 半導体集積回路装置の製造装置および製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080501

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080501

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101210

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101214

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20111011