TW525199B - Electro-optical device - Google Patents
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- TW525199B TW525199B TW090131702A TW90131702A TW525199B TW 525199 B TW525199 B TW 525199B TW 090131702 A TW090131702 A TW 090131702A TW 90131702 A TW90131702 A TW 90131702A TW 525199 B TW525199 B TW 525199B
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8423—Metallic sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8721—Metallic sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/874—Passivation; Containers; Encapsulations including getter material or desiccant
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/23—Sheet including cover or casing
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
A7 B7
525199 五、發明説明(i 本發明係關於電光裝置,其包括·· 光線透射基板; 基板上的層疊,該層疊包括靠近基板之第一光線透射電 極層、第二電極層,以及介於第一與第二電極層之間的有 機電激發光層; 放置於層疊上方之中空覆蓋,該覆蓋以不漏氣的方式連 接到基板,並具有沿著層疊延伸的第一内壁;及 一水膠合吸氣劑,其容納於覆蓋中,以便緊靠第一内壁 此一電光裝置揭示於美國專利A-5,882,761。 藉著經由一電極層將電子射入發光層,並經由其他電極 層將電洞射入,藉由結合電洞與電子,於該層中產生光線 。私極之間較高之電壓,導致較強之光線放射。可是,可 以藉由製造過程所引起的濕氣,或由環境所引起的濕氣, 來消滅此一效應。 、為此,在已知裝置中,層疊係位於由基板與覆蓋所形成 <不漏氣的空間中,而且通常是用水膠合吸氣劑製作的。 舉例來說,藉由控制印刷電路板上的電子來操作裝置, 使黾極上的電壓能夠被控制或改變。 因此,存在於裝置與控制電子結合中之已知裝置的缺點 ’是佔去太多空間。 本發明 < 目的提供起始段落中所描述之類型的電光裝置 ,其被設計以便能夠限制裝置與相關控制電子所佔去的空 間。 裝 訂
-4 - 五、 發明説明( 口根據本發明,達成此—目的係在^覆蓋之第—内壁有缺 2,其巾容納控制f子,以便電地連接到第一電極與第二 電極。 裝置之設計使獲得—緊密的結構成為可能。此外, 义-裝置具有生產-種模組的優點,纟中控制f子位 t作裝置之電Μ件旁邊。此—模衫—個精緻完美的基 % ’可以供給較大裝置之裝配線,如電話。 此-裝置可以包括連續之第—電極層與連續之第二 層。這使裝置用作光源成為可能,舉例來說,作為背:。 :者是’第一與/或第二電極層可能是區段的,結果可以藉 由供給能量給區段㈣成影像或字元。這使裝置能作⑽ =1段也可能包括實質上在—層中平行的線,以及在、 “他層中,對其橫切地延伸而實質上平行的線,一 與影像由點構成。裝置可以是單色或 。子凡 說H έ疋早色成心顏色的,舉例來 %色與監色’以及其混合顏色,如白色與橘色 第-電極可能是電洞注入電極層,舉例來說是 如金、白金或銀,這些金屬在小的層 此一材料高的光線透射率。或者,也可以使 ,為 合物,如聚苯胺與聚骑二氧Β塞吩(pedot),以及::聚 物。舉例說,第一電極層可以是氧化錫细血聚 '出 吩(PEDOT)的雙層。該雙層通常產生改善的電洞、,主入希―礼口塞 第二電極層可以是電子注入電極層,舉::來王說入,具有低 本纸張尺度適用fii^_CNS) A4規格 -5 525199 A7 B7 五、發明説明( 功函數的金屬或金屬合金,如鏡(yb)、鈣(Ca)、鎂:銀 (Mg: Ag)、鐘:铭(Li: Αι)、鋇(Ba),或該層是各種層的薄片, 如鋇/鋁(Ba/ A1)或鋇/銀(Ba/ Ag)。 電激發光層基本上可以包括一種相當高或相當低之分子 里的有機電激發光材料。此一材料可能具有一實質上共軛 的月幹,如聚嘍吩、聚苯、聚乙晞噻吩,舉例來說,尤其 是監色發光聚(烷基)蔡與/或紅色、綠色或黃色發光聚兮苯 乙烯。 舉例來就,基板可以是合成樹脂,如熱塑性塑料,或是 玻璃,如石英玻璃,或者是陶瓷材料。 至於吸氣劑,舉例來說,則可用藉由壓縮或燒結固定於 覆蓋中之吸濕性物質來製成。此一物質的實例包含氧化鋇 (BaO)、氧化鈣(ca〇)、瓴酸鈣(CaS〇4)、氯酸鋇(如^幻⑶與氯酸 鈣(Ca(C104)” 已知裝置中所使用之玻璃覆蓋的缺點是其相當大的内壁 厚度,而為了足夠的機械強度,這是必要的。此一内壁的 厚度也導致相當大的重量。 因此,用金屬,舉例來說,鋁或鎳鉻鋼,來製作覆蓋是 較理想的。鎳鉻鋼是有吸引力的,因為與破璃基板結合, 其熱膨脹接近基板的熱膨脹,使覆蓋-基板的連接能夠經得 住相當大的溫度變化。此外,在此一情況中,舉例來說, 覆蓋可以用薄片材料或條狀材料,迅速地藉由深的拉延來 製造。 柔軟的箔片上有控制電子,並附有將控制電子與第_與 -6 · 本紙張尺度it财g S家標準(CNS) A视格(21GX297公爱) ------
裝 訂
線 525199
第二電極連接之導線軌跡較理想。這是有吸引力的,因為 泊片可以迅速地折疊成兩個,以便於覆蓋導線軌跡,因而 將其自覆蓋分離出來。結果,便不需要提供額外的絕緣體 控制電子,通常是一種積體電路(IC),可以藉由黏劑固定 方、缺口。此一措施具有產生堅定、容易操控單元的優點。
裝 如果覆蓋是用金屬製成,則舉例來說,覆蓋可以藉由密 2裝置連接到基板,其中電氣絕緣的粉末是分散的。舉例 來說,該粉末可以由玻璃珠組成。這使得黏劑,舉例來說 ,%氧基樹脂黏膠,能夠直接作用在覆蓋與基板上面,並 達到電極,而無須特殊的措施,以預防金屬覆蓋使基板上 的導線短路。在此一情況中,粉末係作為間隔。 參考下文中所敘述與說明之具體實施例,本發明之這些 興其他悲樣’將變得顯而易見。 。 圖式簡單說明: 圖式中: 圖1疋本裝置之圖表式、剖面圖。 圖2疋圖1足裝置的平面圖,其係於製造期間。 發明詳細說明: 圖1與圖2中,電光裝置包括一個光透射基板1,而圖中 基板1疋用玻璃製成的。基板丨上提供層之堆疊〕,此一堆 包含靠近電極層4之第—光透射電極層3,以及介於第一 =層3與第二電極層4之間的有機電激發光層5。_中,第 電極層3是包含氧化錫鋼3&與_層聚3,4m塞吩
5 五、發明説明( 3b之雙層。筮——化p ..^〜弟一电極層4是用鋇與鋁製成,而電激發光層5則 、χ % ^笨乙缔製成。在堆疊2上提供中空覆蓋10,以便於 〆一' 内2勺方式連接到基板1。覆蓋10具有沿著堆疊2延伸之 辟 11覆盍中容納水膠合吸氣劑12,以便緊靠第一内 壁:y圖1中,吸氣劑包括氧化鈣(Ca0)。 第内土11具有一缺口 13,其中容納操作裝置之控制電子 拴制I子並電地連接到第一電極3與第二電極4。控制電 子14包括—積體電路。圖中所示之覆蓋10係由金屬製成,即 鎳鉻鋼。 圖中的片15是聚酿亞胺,柔軟的搭片15上有控制電子14 並附有連接控制電子14到第一電極層3與第二電極層4的銅 導線軌跡16。 控制電子14藉由黏劑17,亦即圖中之環氧基樹脂黏膠,固 定於缺口 13中。 覆盖10藉由密封劑6連接到基板丨,期中電氣絕緣的粉末是 分散的,亦即圖1中附有玻璃珠的環氧基樹脂黏膠。 圖1所示之裝置係得自圖2之半成品,其分別沿著折疊線 15c與15d ’折疊落片15之側翼15a與说。如果需要,折疊的部 分可以使用一種黏劑來附著。側翼15b覆蓋導線圖樣16,而 側翼15a則覆盖導線ι8。亦請參見圖丨,箔片15藉著一種熱處 理的非均向導電黏膠,經由一種連接條15e連接到基板1。隨 後在覆盍ίο的上面提供箔片15,並於缺口 13中,藉由黏劑17 固定控制電子14。
Claims (1)
- 525199 A8 B8 C8 D8 六、申請專利範圍 1.. 一種電光裝置,包括: 一光線透射基板(1); 基板(1)上層之一堆疊(2),該堆疊包括靠近基板⑴之一 第一光線透射電極層(3),一第二電極層(4),以及介於第 一(3)與第二電極層⑷之間之一有機電激發光層(5); 一中空之覆蓋(10),放置於堆疊(2)的上面,該覆蓋以 不漏氣的方式連接到基板(1),並且具有沿著堆疊⑺延伸 的一第一内壁(11);及 一水膠合吸氣劑(12),其容納於覆蓋(10)之中,以便於 緊靠第一内壁(11), 其特徵為提供一附有缺口(13)之覆蓋(10).的第一内壁(11) ,其中容納控制電子(14),以便於電連接到第一電極(3) 與第二電極(4)。 2. 根據申請專利範圍第1項之電光裝置,其特徵為覆蓋(1〇) 係由金屬製成。 3. 根據申請專利範圍第1或2項之電光裝置,其特徵為控制 電子(14)係位於一附有導線軌跡(16)的柔軟箔片(15)上,該 導線軌跡連接控制電子(14)到第一電極層(3)與第二電極 層⑷。 4. 根據申請專利範圍第1或2項之電光裝置’其特徵為控制 電子(14)係藉由一種黏劑(17),固定於缺口(13)中。 5. 根據申請專利範圍第2項之電光裝置,其特徵為覆蓋(1〇) 係藉由一種密封劑(6)連接到基板⑴,其中電氣絕緣之粉 末是分散的。 • 9 - 本纸張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
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EP (1) | EP1336207A1 (zh) |
JP (1) | JP3860793B2 (zh) |
KR (1) | KR20020084084A (zh) |
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-
2001
- 2001-11-02 EP EP01993949A patent/EP1336207A1/en not_active Withdrawn
- 2001-11-02 KR KR1020027008689A patent/KR20020084084A/ko not_active Application Discontinuation
- 2001-11-02 CN CNB018060811A patent/CN1241273C/zh not_active Expired - Fee Related
- 2001-11-02 JP JP2002541729A patent/JP3860793B2/ja not_active Expired - Fee Related
- 2001-11-02 WO PCT/EP2001/012900 patent/WO2002039513A1/en not_active Application Discontinuation
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US7629740B2 (en) | 2004-04-30 | 2009-12-08 | Toshiba Matsushita Display Technology Co., Ltd. | Display device with stacked layer body |
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JP2004514245A (ja) | 2004-05-13 |
US20020067126A1 (en) | 2002-06-06 |
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CN1241273C (zh) | 2006-02-08 |
CN1411615A (zh) | 2003-04-16 |
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US6628070B2 (en) | 2003-09-30 |
WO2002039513A1 (en) | 2002-05-16 |
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