TW522575B - Light-emitting-diode-chip on the basis of GaN and the method to manufacture light-emitting-diode-element containing the said chip - Google Patents
Light-emitting-diode-chip on the basis of GaN and the method to manufacture light-emitting-diode-element containing the said chip Download PDFInfo
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- TW522575B TW522575B TW090109884A TW90109884A TW522575B TW 522575 B TW522575 B TW 522575B TW 090109884 A TW090109884 A TW 090109884A TW 90109884 A TW90109884 A TW 90109884A TW 522575 B TW522575 B TW 522575B
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- emitting diode
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- 238000000034 method Methods 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 230000008878 coupling Effects 0.000 claims abstract description 9
- 238000010168 coupling process Methods 0.000 claims abstract description 9
- 238000005859 coupling reaction Methods 0.000 claims abstract description 9
- 235000012431 wafers Nutrition 0.000 claims description 74
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910021124 PdAg Inorganic materials 0.000 claims description 2
- 239000004576 sand Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 6
- 238000000576 coating method Methods 0.000 claims 6
- 239000004411 aluminium Substances 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 239000004744 fabric Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000013589 supplement Substances 0.000 claims 1
- 238000000407 epitaxy Methods 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 description 13
- 239000013078 crystal Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
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- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H01L33/40—Materials therefor
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
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- H01L2924/181—Encapsulation
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L33/58—Optical field-shaping elements
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Description
522575 五、發明説明(1 ) 本發明是有關於根據申請專利範圍第1項或第4項 之前言之發光二極體晶片,以及有關於具有以GaN爲 主之發光二極體晶片之發光二極體元件之製造方法。 在製造以GaN爲主之發光二極體晶片中存在此基本 問題,即,此等p-摻雜層(尤其是P-摻雜之GaN層或 AlGaN層)的可獲得之最大導電性之不足,在由其他的 材料系統所構成之傳統之發光二極體晶片中通常使用正 面接觸,(其爲了得到儘可能高的光線耦合而出,只將 晶片正面的一小部份覆蓋),以便達成在晶片整個橫截 面上電流之擴散。 在導電基板上P-導電層的成長,因而在P-導電層之 整個橫截面上之施加電流可能會導致在經濟上不合理的 結果。此理由在於,製造用於以GaN爲主的層之成長 的導電式晶格調整基板(例如GaN基板)是涉及高的技 術費用,並且此p -摻雜之以G aN爲主之層的成長對於 未摻雜與η-摻雜之GaN-化合物而言,並不適合於晶格 調整基板,而導致對於發光二極體不足夠的結晶品質。 在一個熟知的附著物件中克服上述的問題,在此P-導電層之遠離背向基板的面之整個表面塗佈對於光線透 過之接觸層或另一個導電良好的層而用以擴散電流,此 層具有所設之連線接觸。 然而,此首先提到的建議具有缺點,此光線可觀的 部份在接觸層中被吸收◦在第二個所提到的建議中需要 額外的方法步驟,其提高了製造費用。 522575 五、發明説明(2 ) 在曰文專利文件JP 1 0- 1 5 0 220 A中揭示--種發光半 導體元件,其中在n-GaN-基板上相繼接續地塗佈n-GaN半體層,發光層與p_GaN半導體層◦在p-GaN半 體層的表面上配置此在基本上完全覆蓋的p-電極。 本發明的目的首先在於發展一種在一開始所提到特 1生的發光二極體晶片,其具有改善之電流擴散,而將其 額外的製造費用保持小。此外,應該使用一種方法以製 造具有此種晶片之發光二極體元件。 此首先所提到的目的是以具有申請專利範圍第1項 或第4項之特徵之發光二極體晶片而解決。有利之其他 發展是申請專利範圍附屬項之標的。製造根據本發明發 光二極體晶片之較佳的方法,是申請專利範圍第9至 1 4項之標的。一種較佳的發光二極體元件是申請專利 範圍第1 5項之標的。 在根據本發明的發光二極體晶片中此基板是導電的 。在此基板上首先塗佈磊晶層序列之η-導電層。在此 之上是磊晶層序列之Ρ-導電層,接著是側面整個表面 塗佈之反射能夠連接結合之ρ -接觸層。此基板是在其 遠離背向磊晶層序列之主要表面上具有所設之接觸金屬 層,其只將此主要表面之一部份覆蓋。此光線由晶片耦 合而出是經由基板之主要表面之裸露區域實施,以及, 經由晶片側面實施。 此基板在此有利地作爲窗口層,其將此在晶片中耦合 而出所產生的光線改善。爲了將基板的厚度最適化,是 -4 - 522575 五'發明説明(3 ) 以 此 有 利 的 方式 在 嘉 晶 層 序 列 成 長後 ,例如借助 於硏磨 及 / 或 飽 刻 而變 薄 〇 在 根 據 本 發明 之 另 — 個 發 光 —一 極體 晶片中,此 晶片 只 具 有 盘 晶 層。 對 此 成 長 基 板 在幕 晶層序列之 嘉晶成 長 後 被 去 除 ◦此 P· 導 電 石 晶 層 曰 疋 在其 遠離背向η -導電 磊 晶 層 之 主 要表 面 上 在 基 本 上 整 個表 面具有所設 之反射 能 夠 連 接 結合 之 p- 接 觸 層 〇 在 其遠 離背向ρ-_ 1電磊 晶 層 之 π .導 電嘉 晶 層 之 主 要 表 面 上是 η -接觸層, 其只 將 此 主 要 表 面之 一 部 份 覆 蓋 〇 此 光線 由晶片親合 而出是 經 由 η •導 電 嘉晶 層 之 主 要 表 面 之 裸露 區,以及經 由晶 片 側 面 而 實 施。 此 成 長 基 板在 此 情 形 中 可 以 不 但電 性絕緣,而 且可 以 不 讓 光 線 通過 並 且 因 此 有 利 地選 擇所有關於 最適的 成 長 條 件 〇 此 種 所 三田 日闫 的薄 膜 LED -晶片之特別的優點在於在晶片 中 減 少 在 理想 上 是 沒 有 光 線 吸 收, 以及光線之 改善之 由 晶 片 耦 合 而出 特 別 是 由 於 具 有折 射率突變之 界面總 數 之 減 少 〇 以 兩 個 根 據本 發 明 之 發 光 —' 極 體晶 片將此特別 的優 點 結 合 1 即 ,存 在 此 可 能 性 j 此 晶片 之損耗熱的 產生區 域 (尤其是P-摻雜層與1 ρ η -界 面 )非常接近所產生的散熱 匯 點 (h eat s ink) ,此磊晶層序列1 t際上可以有接在此散 熱 匯 點 上 作 熱耦 合 〇 因 此 , 此 π 曰曰 片可 以被非常有 效地冷 卻 9 因 而 其 所發 出 光 線 的 穩 定 5- 性 提高 ,同樣地也 提高了 522575 五、發明説明(4 ) 晶片的效率。 在兩個根據本發明之發光二極體晶片中,由於整個 表面的接觸而有利地降低流動電壓。 在根據本發明之發光_*極體晶片中,此p -接觸層具 有在此P-面上塗佈的透明第一層與在此上塗佈的第二 反射層。因此’此接觸層可以不但將其電氣特性而且將 其反射特性以簡單的方式最適化(〇 p t i m i z e d)。 用於此第一與第二層較佳的材料是P t及/或P d或 Ag,Au及或A1。然而,此反射層還可以形成作爲電介 鏡。 在另一個較佳的其他發展中,此p -接觸層具有P t A g 合金及/或PdAg合金。 在一個其他較佳的實施形式中,此藉由層序列所形 成之半導體主體之整個自由表面或是一部份區域起毛粗 縫。藉由此起毛粗f造干擾到光稱合出表面上的全反射, 並且因此具有光學鍋合出的強度進一步提昇的優點。 在根據本發明的方法以製造具有根據本發明之發光 一極體晶片之發光二極體兀件之中,此具有P-面的晶 片’是安裝在電性連接部件(尤其是電性導體框架)之晶 片安裝表面上。 在本發明尤其較佳的其他發展中,此製造方法經由 此以層序列所形成之半導體主體之起毛粗糙而繼續進行 ’其中此半導體主體之整個裸露表面或部份區域由此起 毛粗f造。關於提高光之產量(throughput)之特別有效之 -6- 522575 五、發明説明(5 ) 起毛粗糙是藉由半導體主體之蝕刻或借助於砂射束 (sand jet)的方法而製成。 本發明其他有利的配置是由以下關於第u至5圖所 描述說明的實施例而產生。 圖式之簡蚩說明 第1 a圖是槪要圖式說明經由第一實施例之截面。 第1 b圖是槪要圖式說明較佳的p _接觸層。 第2圖是槪要圖式說明經由第二實施例之截面。 第3 a至3 c圖是槪要圖式說明根據第1 a圖之實施例 之方法過程。 第4 a至4 e圖是槪要圖式說明製造根據第2圖之實施 例之方法過程。 第5圖是根據本發明之發光二極體晶片之另一個實 施例之槪要截面圖式。 在此等不同實施例的圖中,相同或相同作用的組成 成份各自具有所設之同樣或類似的參考符號。 在第la圖之發光二極體晶片1中是在SiC基板2上 塗佈光線發射磊晶層序列3。此具有例如η-導電摻雜 GaN-或AlGaN裔晶層4以及p-導電摻雜GaN-或AlGaN 嘉晶層5。同樣…以例如…-個以GaN爲主的磊晶層序 列3具有所設之雙異質結構,單量子井(S Q W )結構或多 重量子井(M Q W)結構,具有一個或多個非摻雜層i 9,例 如是由InGaN或InGaAIN所構成。 此SiC基板2是導電並且用於讓此由磊晶層序列3 522575 五、發明説明(6 ) 所發射之光線透過。 在其背向遠離s i C基板2 P -面9上是在比磊晶層序列 3上在本質上是整個表面塗佈一反射,能夠連接結合之 P-接觸層6。此在本質上例如由Ag,由PtAg合金及/ 或P d A g合金所構成。 此P -接觸層ό還可以如在第1 b圖中槪要圖式說明, 由透過光線的第一層1 5與反射第二層1 6所組成。此第 一層1 5在本質上例如是由P t及/或p d所構成,並且 此第二層1 6本質上例如是由A g,A U及/或A 1或介電 鏡子層所構成。 在其背向遠離磊晶層序列3之主要表面1 〇上是具有 接觸金屬丨曾7之S i C基板2,此層只將此主要表面1 〇 之一部份覆蓋,並且形成作爲用於接線連接(wirebonding)之連 接墊。 此接觸金屬層7例如是由在s i C基板2上所塗佈的 N i層,接著是A u層所構成。 此晶片1是借助於模片(Die)-連接其p-側,即,以p_ 接觸層6安裝於導電之連接框架1 1(導引架)之晶片安 裝表面12上。此η-接觸金屬層7是經由連接線17而 與連接框架1 1之連接部份1 8連接。 此光線由晶片1耦合而出,是經由S i C基板2之主 要表面1 〇的自由區域,以及經由晶片側面1 4實施。 選擇式地,晶片1具有在嘉晶層序列3成長後變薄 之SiC基板2(這在第la圖中借助於虛線來表示)。 522575 五、發明説明(7 ) 此在第2圖中所說明的實施例與在第1 a圖所描述說 明的實施例不同,其首先在於,晶片1僅只具有磊晶層 序列3之嘉晶層,並且不具有基板層。此後者在晶晶層 成長之後,例如借助於蝕刻及/或硏磨而去除。有關於 此種所謂的薄膜-LED-晶片的優點請參閱說明書的共同 部份。其次,此磊晶層序列3具有隻異質結構:一單量 子井(SQW)結構或一多量子井(MQW)結構其具有一個或 多個例如是由I n G a N或n G a A 1N所構成之非摻雜層1 9 。典型地,在此還槪要說明LED-殼體21。 在此於第3 a至3 c圖中槪要說明的方法過程中,以製 造根據第1 a圖之具有發光二極體晶片丨之發光二極體 元件,首先在SiC基板2上成長發射光線之磊晶層序 列3 (第3 a圖)。然後在此磊晶層序列3之p -面9上之 整個表面塗佈能夠連接之p -接觸層6,以及在基板2之 背向遠離磊晶層序列3之主要表面1 〇之部份區域上塗 佈η-接觸層7(第3b圖)◦此製程步驟是在所有的所謂 的晶圓複合結構中發生,因而多個晶片可以同時並排毗 鄰地製成。 在此以上所描述的製程步驟後,此晶圓複合結構被. 拆開成各個晶片1。此等各個晶片然後借助於焊料各自 以能夠連接結合的p -接觸層6,而安裝在電性導體框架 1 1的晶片安裝表面1 2上(第3c圖)。 此在第4a至4e圖中所槪要圖式說明之方法以製造具 有根據第2圖之發光二極體晶片丨之發光二極體元件, -9 - 522575 五、發明説明(8 ) 此方法在基本上是不同於在第3 a至3 c圖所說明 於,在磊晶層序列3成長之後,以及在塗佈p_g 之前或之後,基板2被去除(第4c圖)。此基板: 情況中不但可以電性絕緣,而且可以不透光線, 此有利地設計所有關於最適的成長條件。 在去除了基板2之後在磊晶層序列3之η-面1 佈η-接觸金屬層7(第4d圖),然而在此之前實茄 於以上有關於第3 c圖之已經說明之安裝步驟(第4 此在第5圖中所說明的實施例具有多個配置成 形不同的半導體層1 〇 1,其由GaN或一個以此爲 三或四個化合物所構成。在操作中在此等層的本 形成主動區1 〇 2,在其中產生光線1 〇 5。 此層堆疊由第一主要表面103與第二主要表面 爲邊界,在基本上此所產生的光線1 0 5經由第一 1 03在所鄰接的周圍中耦合而出。 在第二主要表面1 04上塗佈反射、能夠連接結 P-接觸層106如以上所說明。若是接觸則此半導 在其耦合而出之側是經由接觸表面1 1 2,以及在 是經由P-接觸層1 06。此反射側之接觸可以例如 下方式實施:此半導體主體之反射側是設置於金 之上,此不但可以作爲載體,並且還作爲電流輸 此反射層1 06造成,光線1 〇5的一部份,其在 主要表面1 0 3上耦合而出時反射回半導體主體中 於第一主要表面1 03的方向中反射,因此總共此 者是由 S觸層6 2在此 並且因 3上塗 2類似 e圖)◦ 堆疊 主的 身內部 1 04 主表面 合的 體主體 反射側 藉由以 屬主體 送。 第一 ,再度 經由第 -10- 522575 五、發明説明(9 ) 一主要表面1 03耦合而出的光線量增加。此增加由於以 下原因而使得可能,即,此元件作爲薄層元件實施而沒 有吸收光線的基板,並且反射面1 06直接塗佈在GaN-半導體主體上。 此半導體主體的表面因此具有起毛粗糙1 07。此粗糙 107導致光線105在第一主要表面103上的散射,因此 干擾在第一主要表面103上的全反射。爲了繼續防止此 種散射,此所產生的光線藉由在兩個主要表面1 03與 1 〇4或反射面1 06之間連續類似的反射根據光波導 (wave guide)的特性而進行,而沒有離開半導體主體。 因此藉由此起毛粗糙1 07,此光的產量繼續增加。 本發明根據上述實施例的說明當然不能被理解作 爲本發明的限制。本發明其實尤其是在所有的發光二極 體晶片中可使用,其中此由去除成長基板而存在之磊晶 層具有不充足的導電性。 參考符號說明 1 .....發光二極體晶片 2 .....基板 3 .....磊晶層序列 4 .....磊晶層 5 .....嘉晶層 6 .....p-接觸層 7 .....接觸金屬層 9.....p -面 -11- 522575 五、發明説明(1Q ) 10 · · · • •主要表面 11· · · • •終端框架 12 · · · • •晶片安裝表面 14 · · · • •晶片側面 15··· • •第一層 16 · · · •.第二層 17· · · ••連接線 18· · · • •終端部件 19 · · · • •層 21 · · · • · LED-殼體 -12-
Claims (1)
- ¢22515 ___ 補充丨 六、申請專利範圍 第90109884號「以GaN爲主的發光二極體晶片以及具有其之 發光二極體元件之製造方法」專利案(90年12月修正) Λ申請專利範圍 1. 一種發光二極體晶片(1),其中發射光線之磊晶層序列(3) 具有以GaN爲主之η-導電磊晶層(4)與ρ-導電磊晶層(5), 而以η-導電面(8)塗佈在導電基板(2)上塗佈,並且此基板 (2) 用於由磊晶層序列(3)所發射光線通過,此磊晶層序列 (3) 在其背向遠離基板(2)之ρ-面(9)上,在本質上整個表 面具有反射、能夠連接結合之ρ-接觸層(6),基板(2)在背 向遠離磊晶層序列(3)之主要表面(10)上設有接觸金屬層 (7),其只將此主要表面(10)的一部份覆蓋,並且此光線 由晶片(1)之耦合而出是經由基板(2)之主要表面(1〇)之裸 露區域與經由晶片側面(14)實施,其特徵爲, 此Ρ-接觸層(6)具有在ρ-面(9)上塗佈之透明第一層(15) 與在此層上塗佈之反射第二層(16)。 2. 如申請專利範圍第1項之發光二極體晶片(1) ’其中設有 在塗佈磊晶層序列(3)後變薄的基板(2)。 3. 如申請專利範圍第1或2項之發光二極體晶片(1),其中 設有碳化矽基板作爲導電基板(2)。 4. 一種發光二極體晶片(1),具有以GaN爲主之發射光線之 磊晶層序列(3),其具有η-導電磊晶層(4)與P-導電嘉晶層 (5),其特徵爲, 此晶片(1)借助於去除成長基板,在磊晶層序列(3)之嘉 晶成長後僅僅具有磊晶層,此Ρ-導電磊晶層(5)在其背向 六、申請專利範圍 遠離η-導電磊晶層(4)之主要表面(9)上在本質上整個表面 設有反射、能夠連接結合之Ρ-接觸層(6),並且此η-導電 磊晶層(4)在其背向遠離Ρ-導電磊晶層(5)之主要表面(8) 上設有η-接觸層(7),其只將此主要表面之一部份覆蓋, 並且光線之由晶片(1)之耦合而出是經由此η-導電磊晶層 (4)之主要表面(8)之裸露區域與經由晶片側面(14)實施。 5·如申請專利範圍第4項之發光二極體晶片,其中此ρ-接 觸層(6)具有在ρ-面(9)上塗佈之透明第一層(15)與在此層 上塗佈之反射第二層(16)。 6·如申請專利範圍第1或2項之發光二極體晶片,其中此 第一層(15)在本質上具有Pt及/或Pd,並且第二層(16) 具有Ag,Au及/或A1或形成作爲電介質鏡子。 7. 如申請專利範圍第4或5項之發光二極體晶片,其中此 第一層(15)在本質上具有Pt及/或Pd,並且第二層(16) 具有Ag,Αιι及/或A1或形成作爲電介質鏡子。 8. 如申請專利範圍第4項之發光二極體晶片,其中此ρ-接 觸層(6)具有PtAg-及/或PdAg合金。 9. 如申請專利範圍第1或2項之發光二極體晶片,其中層 序列(3,101)之整個裸露之表面或部份區域被塗佈。 10. 如申請專利範圍第4或5項之發光二極體晶片,其中層 序列(3,101)之整個裸露之表面或部份區域被塗佈。 11. 如申請專利範圍第8項之發光二極體晶片,其中層序列 (3,101)之整個裸露之表面或部份區域被塗佈。 12· —種製造具有以GaN爲主之發光二極體晶片(1)之發光二 -2- 622575 六、申請專利範圍 極體元件之方法,其特徵爲具有以下步驟: (a) 在基板(2)上磊晶成長光線發射之磊晶層序列(3),此基 板須對於此由磊晶層序列(3)發出的光線通過,使得磊 晶層序列(3)之η-面(8)面向接近基板(2),並且磊晶層 序列(3)之ρ-面(9)背向遠離基板(2), (b) 藉由在ρ-面(9)上塗佈透明的第一層(15),與在此第一 層(15)上塗佈反射第二層(16),而在磊晶層序列(3)之 P -面(9)整個表面上塗佈能夠連接結合之ρ -接觸層(6), (c) 在基板(2)之遠離背向磊晶層序列(3)之主要表面(10)之 部份區域上塗佈η-接觸層(7), (d) 將晶片(1)塗佈在LED殼體的晶片安裝表面(12)上,在 LED殼體中之內連線上或是電性連接框架(11)上,以 其能夠連接結合之P-接觸層(6)朝向晶片安裝表面。 &如申請專利範圍第12項之方法,其中在塗佈η-接觸層(7) 之前將基板(2)變薄。 14· 一種製造具有以GaN爲主之發光二極體晶片(1)之發光二 極體元件之方法,其特徵爲, U)須在基板(2)上磊晶成長一發射光線之磊晶層序列(3), 使得磊晶層序列(3)之η-面(8)面向接近基板(2),並且 磊晶層序列之Ρ-面(9)背向遠離基板(2), (b) 藉由在ρ -面(9)上塗佈透明的第一層(15),與在此第一 層(15)上塗佈反射第二層(16),而在磊晶層序列(3)之ρ-面(9)上整個表面塗佈能夠連接結合之ρ-接觸層(6), (c) 由磊晶層序列(3)去除基板(2), 522575 六、申請專利範圍 (d) 此磊晶層序列(3)之在步驟(c)中所裸露之主要表面(13) 之部份區域上塗佈η-接觸層(7) ’ (e) 將晶片(1)塗佈在LED殼體的晶片安裝表面(12)上,在 LED殻體中的內連線上或電性連接框架(11)上,以其 能夠連接結合之P-接觸層(6)朝向晶片安裝表面(12)。 15. 如申請專利範圍第1 2至1 4項中任一項之方法,其中此 層序列(3,101)整個或在部份區域中起毛粗糙。 16. 如申請專利範圍第1 5項之方法,其中此層序列(3 ’ 1 〇 1) 藉由蝕刻而起毛粗糙。 17. 如申請專利範圍第1 5項之方法,其中此層序列(3 ’ 1 〇 1) 藉由砂射束方法而起毛粗糙。 18. —種發光二極體元件,其具有如申請專利範圍第1至9 項中任一項之發光二極體晶片,其中晶片(1)是安裝於LED 殻體(21)之晶片安裝表面(12)上,尤其在導體框架(丨1)·^ 或在LED殻體之內連線上,其特徵爲,此反射接觸金屬 層(6)是置於晶片安裝表面(12)上。 -4-
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-
2001
- 2001-03-16 EP EP01931364.2A patent/EP1277241B1/de not_active Expired - Lifetime
- 2001-03-16 CN CNB018087345A patent/CN1252837C/zh not_active Expired - Lifetime
- 2001-03-16 JP JP2001581353A patent/JP2003533030A/ja active Pending
- 2001-03-16 US US10/258,340 patent/US7319247B2/en not_active Expired - Lifetime
- 2001-03-16 WO PCT/DE2001/001003 patent/WO2001084640A1/de active Application Filing
- 2001-04-25 TW TW090109884A patent/TW522575B/zh not_active IP Right Cessation
-
2006
- 2006-08-23 US US11/508,504 patent/US20070012944A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2003533030A (ja) | 2003-11-05 |
US7319247B2 (en) | 2008-01-15 |
WO2001084640A1 (de) | 2001-11-08 |
EP1277241B1 (de) | 2017-12-13 |
US20070012944A1 (en) | 2007-01-18 |
US20040026709A1 (en) | 2004-02-12 |
CN1439176A (zh) | 2003-08-27 |
EP1277241A1 (de) | 2003-01-22 |
CN1252837C (zh) | 2006-04-19 |
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