TW522544B - Production method for semiconductor crystal and semiconductor element - Google Patents

Production method for semiconductor crystal and semiconductor element Download PDF

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Publication number
TW522544B
TW522544B TW91102215A TW91102215A TW522544B TW 522544 B TW522544 B TW 522544B TW 91102215 A TW91102215 A TW 91102215A TW 91102215 A TW91102215 A TW 91102215A TW 522544 B TW522544 B TW 522544B
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TW
Taiwan
Prior art keywords
semiconductor
crystal
semiconductor crystal
substrate
mentioned
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TW91102215A
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English (en)
Chinese (zh)
Inventor
Seiji Nagai
Kazuyoshi Tomita
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Toyoda Gosei Kk
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Publication of TW522544B publication Critical patent/TW522544B/zh

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
TW91102215A 2001-03-30 2002-02-07 Production method for semiconductor crystal and semiconductor element TW522544B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001098870A JP4084544B2 (ja) 2001-03-30 2001-03-30 半導体基板及び半導体素子の製造方法

Publications (1)

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TW522544B true TW522544B (en) 2003-03-01

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TW91102215A TW522544B (en) 2001-03-30 2002-02-07 Production method for semiconductor crystal and semiconductor element

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JP (1) JP4084544B2 (ja)
TW (1) TW522544B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8030665B2 (en) 2002-07-08 2011-10-04 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
CN101939820B (zh) * 2008-02-15 2012-02-08 三菱化学株式会社 外延生长用基板、GaN类半导体膜的制造方法、GaN类半导体膜、GaN类半导体发光元件的制造方法以及GaN类半导体发光元件

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Publication number Priority date Publication date Assignee Title
JP4201541B2 (ja) 2002-07-19 2008-12-24 豊田合成株式会社 半導体結晶の製造方法及びｉｉｉ族窒化物系化合物半導体発光素子の製造方法
JP4447344B2 (ja) * 2004-02-19 2010-04-07 富士通株式会社 半導体装置及びその半導体装置に於ける半導体構造を用いた紫外発光素子及びそれらの製造方法
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US7777250B2 (en) 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
US8173551B2 (en) 2006-09-07 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Defect reduction using aspect ratio trapping
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
WO2008051503A2 (en) 2006-10-19 2008-05-02 Amberwave Systems Corporation Light-emitter-based devices with lattice-mismatched semiconductor structures
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
KR100763467B1 (ko) 2007-04-18 2007-10-04 주식회사 시스넥스 단결정 질화갈륨 기판의 제조방법
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
US8344242B2 (en) 2007-09-07 2013-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-junction solar cells
KR20110018890A (ko) * 2008-05-06 2011-02-24 키마 테크놀로지스, 인코포레이티드 제ｉｉｉ족 질화물 주형 및 관련된 헤테로구조체, 장치, 및 그들의 제조 방법
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
EP2335273A4 (en) 2008-09-19 2012-01-25 Taiwan Semiconductor Mfg FORMATION OF EQUIPMENT BY EXCESSIVE GROWTH OF THE EPITAXIAL LAYER
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
KR101563686B1 (ko) 2009-01-15 2015-10-27 삼성전자주식회사 반도체 발광소자의 제조방법
JP5705207B2 (ja) 2009-04-02 2015-04-22 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． 結晶物質の非極性面から形成される装置とその製作方法
JP5417211B2 (ja) * 2010-02-10 2014-02-12 Ｄｏｗａエレクトロニクス株式会社 エピタキシャル成長基板及び半導体装置、エピタキシャル成長方法
WO2012050888A2 (en) * 2010-09-28 2012-04-19 North Carolina State University Gallium nitride based structures with embedded voids and methods for their fabrication
KR101480949B1 (ko) 2013-07-04 2015-01-14 전자부품연구원 화합물 반도체 기판 및 이의 제조 방법
KR101578717B1 (ko) * 2014-05-20 2015-12-22 주식회사 루미스탈 질화갈륨 웨이퍼를 제조하는 방법
TWI569464B (zh) 2015-10-22 2017-02-01 隆達電子股份有限公司 化合物半導體薄膜結構

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8030665B2 (en) 2002-07-08 2011-10-04 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
CN101939820B (zh) * 2008-02-15 2012-02-08 三菱化学株式会社 外延生长用基板、GaN类半导体膜的制造方法、GaN类半导体膜、GaN类半导体发光元件的制造方法以及GaN类半导体发光元件

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Publication number Publication date
JP2002293698A (ja) 2002-10-09
JP4084544B2 (ja) 2008-04-30

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