TW544930B - Method for producing semiconductor crystal - Google Patents

Abstract

The invented method obtains a quality semiconductor crystal independent of the base substrate. The method comprises: forming a seed crystal layer formed of a GaN layer 103 (second layer of the seed crystal layer) and an AlN buffer layer 102 (second layer of the seed crystal layer) on a sapphire substrate 101; etching the surface of the seed crystal layer to form grooves having a width (width of the seed crystal S) of about 5 mum, a side wing width W of about 15 mum, a depth of about 0.5 mum, in order to form a rectangular platform with an approximately cross-sectioned shape; aligning the eroded remain portion of the flattened part having the seed crystal layer according to a period L of about 20 mum so that the side wing valley part exposes a portion of the sapphire substrate 101, in which the ratio of the width of the seed crystal to the side wing, S/W, is preferably 1/3; growing the semiconductor crystal A to be more than 50 mum; and separating the crystal from the base substrate to obtain a quality single crystal independent of the base substrate.

Description

544930 V. Description of the invention (1) [The high-quality semi-conductor compound semiconductor of the present invention belongs to this, and the crystal grows [Knowledge 1 technology of semiconductor crystal formed on the substrate 7-202 265: Wet type Qian Kefang produced a thick film of GaN (and so on to remove the blue [invention of the solution, but in the group IIIi nitride constant difference and other factors are applied to the target due to factors such as the formation of semiconductors, etc., but the constant difference and other factors The technical field is about the formation of crystalline substrates on the conductors of the conductive substrates, such as crystallization, a m family method, or the subject of semi-precious stones, and other conventional chemical elements. The domain produced by the substrate after the base substrate] A method of obtaining an independent crystal from the base substrate by growing a semiconductor crystal 5 of a group m nitride system on the base substrate. Suitable for manufacturing various semiconductor elements such as LEDs, etc. In regard to the semiconductor junction formed from a group III nitride compound semiconductor and obtained from this base substrate, a semiconductor junction such as the one disclosed in Japanese Patent Gazette "Heihide" is known. The method described in “Methods” includes sapphire substrates, where the conductor crystals are grown by the HVPE method, etc.), and then the plates are irradiated with laser light or polished. Question] In the technology, when the thermal expansion coefficient difference between the base substrate (such as sapphire, etc.) and the compound semiconductor, and the temperature drop after the completion of the lattice growth step, the crystal should be crystallized (such as: GaN), of course, will cause The subject of single crystal cracking. Knowing the state of the technology, if nitrides such as gallium nitride (G a N) are grown from sapphire or silicon (S i) plates to room temperature, the thermal expansion coefficient or the stress generated by the lattice will cause nitrogen to grow. Polyimide semiconductor layer

Page 5 544930 V. Description of the invention (2) Number misalignment and cracking. In this way, if cracks occur in the growth layer (nitride semiconductor layer), when a device is fabricated thereon, many lattice defects, dislocations, deformations, and deterioration of the characteristics of the through-hole assembly are caused. Most of X Temple ’s dislocations or tortoises will cause the device to be produced and form a trigger device. Furthermore, when the substrate (crystal) is removed, a large area is obtained. This causes the target crystal to have a turtle problem. The bottom substrate has only a residual growth condition. Because of the above-mentioned dislocation or the turtle, when the thick film grows and cracks, it is very easy to generate layers and obtain the effect of cracking from the substrate. In order to solve the above problems, the present invention is to solve the above-mentioned problems. The independent high-quality reference conductor crystals are separated from each other, and the purpose is to obtain the basic phase from the substrate. [Solutions, functions, and effects of the invention] The above measures are effective. Transformation: On the physical board, the high-quality growth of the Group III nitride system board is independent of this substrate-based substrate board. The second and next day nk steps are characterized by the following steps: Vertical layer t early layer or multiple layers of group m nitride-based compounds to form a seed layer layer of seed layer; the base substrate is used to make the seed: said; two;!;: F 'exercise chemistry Or physical invasion treatment, the steps are as follows: Γ: ί The remaining residual shape of the crystal on the base substrate Λ begins, the exposed surface of the etched remains on the V layer is set to the semiconductor junction utilization company 'νγ3 long Initially, the crystal growth surface is grown, and the crystal growth surface W is grown by m to crystallize the semiconductor A until they are connected to each other and at least

544930 V. Description of the invention (3) Crystal growth step until reaching a series of slightly flat planes; and a separation step of separating the semiconductor crystal A from the base substrate by breaking the etched remains. Among them] The so-called "Group VIII nitride compound semiconductor" generally refers to the "A1 Bu " GayIr ^ N; 0, 1, 0-, y = 1, 〇 ^ 1 —xy ^ i ”constitutes a semiconductor with an arbitrary mixed crystal ratio represented by the general formula. In addition, a semiconductor added with a p-type or η-type impurity is also included in the“ group m nitride compound semiconductor ”in this specification. Within the category. Furthermore, at least a part of the group m element (A1, Ga, In) is substituted with boron (B), thorium (T1), or the like, or at least a part of nitrogen (N) is substituted with phosphorus (P), arsenic Substituted semiconductors such as (As), antimony (Sb), and bismuth (Bi) are also included in the category of "m-nitride-based compound semiconductors" in this specification. Furthermore, the aforementioned P-type impurities may be added with, for example, magnesium, calcium (Ca), or the like. Furthermore, the above-mentioned n-type impurity system may be added with, for example, silicon (s i), sulfur (s), selenium (Se), tellurium (Te), or germanium (Ge). In addition, impurities such as europium may be added to more than two elements at the same time, and type 2 (P-type and η-type) may also be added at the same time. In addition, the above-mentioned base substrate material can be sapphire, spinel, manganese oxide, lithium gallium oxide (LiGa02), molybdenum sulfide (Mos), silicon (Si), silicon carbide (SiC), AIN, GaAs , InP, GaP, Mg0, Zn〇, or MgAl2O4, etc .: That is, the material of the base substrate such as hafnium can be a conventional or arbitrary crystal growth substrate that can contribute to the crystal growth of a Group VIII nitride-based compound semiconductor. .

91102218.ptd Page 7 544930 V. Description of the invention (4) Differential J3 ί: Material ’From the reaction with GaN and the coefficient of thermal expansion combined with the qualitative viewpoint of I t, it is best to choose sapphire. On the base substrate of the wreckage and the wreckage, the target semiconductor composed of the πm compound is formed into two, and the base is connected to the remnant, and the two are connected to the wreckage. Half force will easily focus on vwa, and internal or external stress will act as the oblique debris. As a result, in particular, the erosion wreckage will break. This stress means that according to the above-mentioned hand & of the present invention, if this = 2 is used to separate the base substrate from the semiconductor crystal A: ionization; this means, we can obtain the radical "ionization" by the crystal A). & Xi You independent early crystallization (semiconductor junction, by forming the erosion debris as described above, because the contact position between the semi-V body crystal A is limited, the earth substrate substrate ... The poorly derived strain, and at first glance, X is more difficult to produce the difference in the lattice constant between the semiconductor crystal A and the base substrate derived from the consideration of the semiconductor crystal A required for crystal growth. Therefore, when the semiconductor The crystal A does not require stress, but grows in density. The occurrence of cracks or cracks, and the so-called "major invasion | insect wreckage" is shown in the vertical section of Figure 1, and 4 "majority" can be said. It can be connected into one. Therefore, even if it is formed like a one-dimensional flail plane shape, a sharp sine wave shape, or a spiral shape, etc., the rectangular wave shape (ant eclipse debris))

91102218.ptd Page 8 544930 V. Description of the invention (5) The shape and shape of the surface can also obtain the functions and effects of the present invention. Second, it is not limited to strips. Even if the above erosion remains in a slightly circular, slightly elliptical, slightly polygonal, or slightly flat shape, etc., of course, any island such as the polygon of the hair can be obtained When the base substrate is separated from the semiconductor junction ::. When the semiconductor crystal A may contain iodine on the base substrate, the semiconductor crystal a may be left on the conductor crystal A. Divided, or no part of the material is left, the complete separation of the materials mainly depends on these conditions). Continued as a prerequisite (necessarily, the second means is that the thickness of the semiconductor crystal A in the company described above in the first means is set to more than 50 centimeters. = In the step, the thickness of the semiconductor crystal A is preferably about 50 centimeters. If the growth is for the purpose, the semiconductor crystal A can be strengthened, and the thickness of the semiconductor layer A can be concentrated on the above-mentioned erosion debris. The shear stress is further increased by the effects of these effects. Under high temperature conditions, it is also possible to obtain a squeegee # Bo # sleeve Mrt image that produces crystal growth. Therefore, after peeling, the stress caused by the difference in expansion coefficient hardly affects A. Therefore, it does not cause Dislocations or cracks occur, and 0f bulk crystal A (such as GaN single crystal) is returned to Mouth Wu's second method. The semiconductor will follow the semiconductor crystal A and the substrate and use this stress to invade. Furthermore, the third means is that the stress corrosion debris remains fractured between the first crystal A and the base substrate by using the difference in thermal expansion coefficient between cooling or adding the base substrate. 544930 5. Description of the invention (6) That is, the above-mentioned fracture (peeling ) Is based on semiconductor crystal A The stress (shearing stress) derived from the difference in thermal expansion coefficient between the base substrates is used. In addition, according to this method, it can be used especially when the thickness of the semiconductor crystal A is 5 0 // m or more. Improve and maintain the crystallinity of the semiconductor crystal a 'and reliably break the semiconductor crystal A from the base substrate. Furthermore, the fourth means is any one of the above-mentioned first to third means, a crystal layer or a seed crystal. The uppermost layer of the layer is made of gallium nitride (GaN). The specific composition of semiconductor crystal A is most useful for semiconductor crystal growth substrates and other extremely useful gallium nitride (GaN). Therefore, in this case, by forming the Xuanjing layer, or the uppermost layer of the Xuanjing layer, from gallium nitride (GaN), the target semiconductor crystal A (G a N single crystal) can be implemented according to the best conditions. However, related AlGaN, AlGalnN, etc., of course, because there is still considerable industrial use value, so the more specific composition of semiconductor crystal A can also be selected from it. Even in this case, the seed layer or seed crystal The uppermost layer of the layer is preferably a semiconductor (Group HI nitride / compound semiconductor) composed of a single crystal (semiconductor crystal layer A) closer to the target, or a semiconductor of approximately the same composition. Furthermore, the fifth means is the first above. In any of the methods from the fourth to the fourth, the uppermost layer of the Xuanjing layer or the seed layer is formed of aluminum nitride (A 1 N). Thereby, a so-called buffer can be formed because of aluminum nitride (A 1 N). Layer, so that the conventional action of stacking according to this buffer layer (A1 N) can be obtained. That is, the well-known action principle such as the relaxation of the stress acting on the target semiconductor crystal layer A can be reduced with the lattice constant difference. Can easily improve the junction of the target semiconductor crystal A

544930 Furthermore, 'in accordance with this method', because the stress between the A 1 N buffer layer and the base substrate can be made larger, the base substrate can be separated more easily, and 'the above-mentioned effect can be fully obtained For example, the seed layer can be formed of two layers, and an A1 N buffer layer (Xuanjingsheng first layer) can be formed on the lower layer, and a Fuxuan crystal having a GaN layer (seed layer second layer) can be formed on the upper layer. The layer structure can be effectively achieved. With this combination of knots, the functions and effects of the fourth and fifth means can be effectively obtained at the same time. In addition, the sixth means is any one of the first to the fifth, and in the formation step of the erosion debris part, the value of the erosion debris part is equal to or more than 1 and 50 or less. Although it depends on the crystalline growth and 0. You have another file, but it is best to set the interval of the erosion debris to the right. Among them, this arrangement interval refers to the distance between the center points of the left and right sides of each other. Each neodymium etched debris can be used above the semiconductor crystal portion by this means. The compound surplus erodes the valley of the wreckage. Furthermore, if this value is too large, the grain A will not erode the valleys between the wreckages, and only the semiconductor crystal with superior crystals (semiconductor crystal A) will be used. However, the crystallinity cannot be obtained ^ Or, if the value is larger, the result is not expected. The dislocation of the Βθ position will become obvious. If the diameter of the erosion debris is set to S, the thickness of the above configuration in the horizontal direction and the width η% (configuration period) may be ~ ☆ τ Α 直 _________ σ and 疋In words, the most 91102218.ptd page 苐 11 544930 V. Description of the invention (8) Good S / L value is about 1/4. With this setting, the lateral growth (EL0) of the required + conductor crystal A can be fully promoted, so that high-quality monolayers can be obtained, and the distance between the side walls of the erosion debris section facing each other is set to WC. = L —: Make the area between this side wall (ie, the etched recess and the area above it) private. In the following, the width s is referred to as a seed width. Therefore, the ratio s / w of the seed width to the flanks is preferably about 1/3. Furthermore, it is better to carry out the above-mentioned invading rice treatment by arranging the eroded wreckage at a regular interval or a fixed period. By using it, the growth conditions in the horizontal direction are uniform as a whole, which makes it difficult to produce poor crystallinity and uneven growth thickness. In addition, the time before the invasion of the wreckage portion above the valley portion is completely covered with the semiconductor crystal A is difficult to cause local unevenness. Therefore, for example, when the crystal growth method is used, the crystal growth rate is slower in the middle. When the crystal growth method is changed to a crystal growth method with a faster crystal growth rate, this period can be determined accurately, early, or intently. Furthermore, according to this method, the above-mentioned shear stress can be distributed evenly among the erosion debris portions, so that the fracture of all erosion debris portions does not cause unevenness, and the base substrate and the semiconductor crystal A can be reliably implemented. Separation. Therefore, for example, it is also possible to form the stripe-shaped platform of the eroded wreckage and arrange it in equal directions and at regular intervals. The formation of this type of surplus wreckage is relatively easy and reliable compared to the current level of general remaining processing technology.

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5. Description of the invention (9) Advantages of implementation. At this time, the crystallizable direction of the platform (the erosion debris) is < 1 -1 〇 〇 > or < n — 2 〇 >. _ Again ^ The method of forming an eroded wreck at the point of the two-dimensional triangular lattice based on a slightly regular triangle with an edge as its base is also effective. According to this method, since the contact area with the base substrate can be reduced, the above-mentioned effect can reliably reduce the number of dislocations', and the base substrate can be easily separated. / Furthermore, the method of eroding the horizontal cross-sectional shape of the wreckage to form a slightly regular triangle, a triangle, a regular circle, or a quadrangle is also effective. By this method, the direction of the crystal axis of the crystal formed by the Group VIII compound semiconductor can be easily integrated at various locations, or the length (roughness) in the horizontal direction of the etched remains can be limited to ^ It is almost the same in any horizontal direction, so the misalignment can be suppressed. In particular, a regular hexagon or a regular triangle is suitable because it is likely to be caused by the crystal structure of a semiconductor crystal. In addition, the circular or quadrangular shape is easier to form from the viewpoint of manufacturing technology, which is an advantage over the current general etching processing technology. Ninth, the seventh means of the present invention is to process the above-mentioned base substrate. In addition, by using the above-mentioned invasion (money-cut processing, X-name to part of the base substrate, the subsequent crystal growth will be easier for the bee to more easily make the target semiconductor crystal α surface (crystallize to ιΓ), and make it flatter. And, it is easy to form two holes on the side of the eroded wreckage. "The larger this" hole "is formed, the easier it is to concentrate _ Λ (shear stress) in the wreckage wreckage. About the stress

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To achieve the above-mentioned optimum value or appropriate range, it is practical and easy. In addition, the ninth means is to change the crystal growth method from the above 2 :: crystal growth method to the fast-growing crystal growth method in the first step. "," "Jingshe" 在 t will crystal growth method in order to grow faster in the horizontal direction; ai =, = is a crystal growth method that grows faster in the vertical direction, then: within more time τ The semiconductor crystal A having a high crystallinity is excellent. In addition, the tenth means is further behind the separation step of any one of the first to ninth means, and a etched wreck portion that remains on the semiconductor crystal is provided. Fractured debris is a debris removal step that is removed by chemical or physical processing such as etching. According to this method, when electrodes such as semiconductor light-emitting elements are formed on the backside of semiconductor crystal A (the semiconductor light-emitting element is formed on the substrate and the substrate is peeled off), the electricity can be suppressed. Near the interface between crystals A of human half V body, current unevenness or resistance is generated, so that the driving voltage can be reduced, or the luminous intensity can be increased. In other words, by removing the fractured debris that eroded the debris, when the When the electrode is a reflector such as a semiconductor light-emitting element, the light absorption and scattering in the vicinity of the mirror surface are reduced, and the reflectance is increased, so that the light emission intensity can be increased. Furthermore, for example, when physical properties such as grinding are used In the case of carrying out this debris removal step, the flatness of the back surface of the semiconductor crystal A or the semiconductor layer A can also be removed, so that the current unevenness or resistance can be suppressed. Or reduce the light absorption and scattering near the mirror surface and so on to strengthen the above-mentioned effect.

91102218.ptd Page 15 544930 V. Description of the Invention (12) Furthermore, the above processing may be heat treatment. When the sublimation temperature of the part to be removed is lower than the sublimation temperature of the target semiconductor crystal A, it is convenient to use a heating treatment or laser irradiation, etc., and the unnecessary part can also be removed. In addition, the eleventh means is a group m nitride-based compound semiconductor light-emitting device, and includes a method of manufacturing a semiconductor crystal using any one of the first to tenth means, The crystal serves as a crystal growth substrate. According to this method, a group π nitride-based compound semiconductor light emitting device can be easily manufactured by using a semiconductor having high crystallinity and less internal stress. In addition, the twelfth means is a method for manufacturing a semiconductor crystal using any one of the above-mentioned first to tenth methods, and the obtained semiconductor crystal is used as a crystal growth of a crystal growth substrate to manufacture the first III. Group nitride-based compound semiconductor light-emitting device. According to this method, a group Π nitride-based compound semiconductor light-emitting device can be easily manufactured by a semiconductor having high crystallinity and less internal stress. When the seed layer is a plurality of layers, it is preferable to form a buffer layer composed of "AlxGahNCO < 1)" as the first semiconductor layer to be laminated. However, in addition to this buffer layer, the intermediate layer having a composition that is slightly the same as the above buffer layer (such as: A1N, or AlGaN) may also be periodically stacked, or stacked with other layers, or formed into a multilayer structure. Way stack. By stacking such a buffer layer (or an intermediate layer), the stress and the like acting on the semiconductor crystal A, which are derived from the difference in lattice constants, can be relaxed, as is known in the art.

91102218.ptd Page 16 544930 V. Description of the invention (13) Principle of action can improve crystallinity. Furthermore, in the above-mentioned separation step, when the base substrate and the semiconductor crystal A are cooled, it is preferable to leave these in the reaction chamber of the growth device, and pass a slightly constant flow of ammonia (N H3) gas through the reaction. In the indoor state, the method is to cool to a normal temperature at a cooling rate of about "-10lTC / min to -0.5 ° C / min". For example, by this method, the crystallinity of the semiconductor crystal A can be maintained stably and with high quality, and the above-mentioned separation step can be carried out with certainty. The above problems can be effectively and reasonably solved by the means of the present invention. [Embodiment of the invention] Hereinafter, the present invention will be described based on specific embodiments. However, the present invention is not limited to the following examples. Implement

In this embodiment, a seed layer (Group IX nitrogen) composed of the first layer of the seed layer (A 1 N buffer layer 1 0 2) and the second layer of the Shu crystal layer (GaN layer 10 3) Chemical compounds (referred to as semiconductors) are formed by vapor phase growth of an organic metal compound vapor growth method (hereinafter referred to as movpe). Carriers used, Diamine 52,), carrier gas (H2 or synonym), trifluoride gallium (Ga (CH3) i, below) ", trifluorene aluminum (A.1 (CH3) 3, below Called "TMA"). First = 〇, Benxi f crystal pattern cross-section schematic diagram of the semiconductor crystal manufacturing process library illustrated in this example. U sequence ’s ’will initially be 1 的 square and ij 忖 r with a thickness of about 2 50 // m

544930 V. Description of the invention (14) 1 0 1 (base substrate), cleaned by organic cleaning and heat treatment (baking). Then 'the single-crystal base substrate] 〇1 a side as the crystal growth surface: and supply H2 at 10 liters / minute, supply 3 at 5 liters / minute, and supply TMA at 20 // mol / minute, The A 1 N buffer layer 102 (the first layer of the seed layer) is grown to a thickness of about 2000 nm. The crystal growth temperature at this time was about 40 ° C. Furthermore, 'the temperature of the sapphire substrate 100 was raised to 1000. 〇, and introduce H2 at 20 liters / minute, introduce 3 at 10 liters / minute, and supply TMG 'at 300 # m〇1 / minute to form a GaN layer with a thickness of about 1 · 5 // m 1 03 (Seed layer second layer) (Figure 1 (a)). The invaded worm's wreckage formed a hardened photoresist mask for boat bangs, and was etched with reactive ions, and “raw rolling etching” to form a stop with a configuration period of L and 20 # m: etched wreckage (Figure 1 (b)). Recognize the shape of the strip, that is, use strip etching until the width of the strip and flanks is $% 15. The degree of visibility is ㈧15, and the A / substrate is broken to about 0 · 1 // m is ^ and the mask is strip. Residual invasion of the surname]: Erwai '{10_2 ()} plane of the above 103 (second layer of seed layer). = 2, periodical formation The flat top has a ⑽ layer 丨 money engraving treatment, and a peripheral buffer layer m (seed crystal layer: layer), and the sapphire substrate is exposed, and the sapphire substrate is exposed in the valley portion of the flanks. 〇θ-shaped invasion remains of the county boat spoon. ^, s ^ Strip-shaped exposed part of the wreckage, volume # β, growth surface, using the HVPE method to form a semi-structured target consisting of GaN single company field and field early and early days

Conductor crystal A. Nisushi takes 5 'to grow the target semiconductor crystal "Ji Jing" to about 25 "m. In this initial stage of growth, the GaN system grows horizontally and vertically, and once the two junctions of each part are flattened into a series of slightly flat shapes, the crystals grow in the vertical direction. In this HVPE method, a horizontal HVpE device is used. In addition, in Group V raw materials, ammonia is used (Dragon 3) ', and in Group π raw materials, "and ^^" are used to obtain GaCl. In this way, seeds are mainly buried by epitaxial growth in the horizontal direction. The side of the crystal layer is then grown in the longitudinal direction to obtain the target thicker semiconductor crystal A (GaN single crystal) (Fig. 1 (c)). In addition, the number R in the figure refers to "void". 4. Separation steps. The above-mentioned semiconductor crystal A is cooled from a cold section at a cooling rate of 5 it / min to a room temperature. In this way, peeling occurs near the A 丨 N buffer layer 丨 02 (the first layer of the seed layer), and the target thicker semiconductor crystal A (G a N single crystal) independently obtained from the base substrate 101 is obtained (Figure 1 (d)). In addition, in addition to this buffer layer, the intermediate layer having a composition (eg, AJN, or AlGaN) that is slightly the same as the above-mentioned buffer layer may be periodically laminated, or cross-laminated with other layers, or formed into a multilayer structure. Way stack. By stacking such a buffer layer (or an intermediate layer), the stress on the semiconductor crystal A, which is caused by the difference in the lattice constant, can be relaxed, and the crystallinity can be improved as in the conventional principle of action. Furthermore, in the above-mentioned separation step, when the base substrate and the semiconductor crystal A are cooled, it is preferable to leave them in the reaction chamber of the growth device, and

544930 V. Description of the invention (16) In a state where a slightly constant flow of ammonia (N H3) gas flows through the reaction chamber, the temperature is about -100 ° C / mi η ~-0.5 ° C / mi η " Cooling rate, the method of cooling to slightly normal temperature If the cooling rate is too fast, the semiconductor crystal A may be cracked or cracked. [Element number description] 101 Base substrate (such as sapphire, etc.) 102 A 1 N buffer layer (seed layer first layer) 103 GaN layer (seed layer second layer) A target semiconductor crystal (group m nitride system) Compound semiconductor) R Cavity L Erosion debris placement cycle S Seed width W Flank width

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Claims (1)

544930 VI. Application Patent Scope 1. A method for manufacturing semiconductor crystals, which is to grow a semiconductor crystal composed of a group m nitride compound semiconductor on a base substrate, and obtain a high-quality semiconductor crystal A independently from the base substrate. The method is characterized in that it comprises: / on the base substrate, a seed layer stacking step of a seed layer composed of a single layer or a plurality of layers of a group III nitride-based compound semiconductor; and forming the base substrate on the base substrate; A part of the side surface of the seed layer is subjected to chemical or physical erosion treatment, so that the seed layer is partially or dispersedly formed on the base substrate to form a surviving wreckage part. The exposed wreckage wreckage part of the seed layer is exposed. A crystal growth step that is set to the first crystal growth surface where the above-mentioned semiconductor crystal A starts crystal growth, and the crystal growth surface is crystal-grown using the crystal growth until the semiconductor crystal A is connected to each other and grows to at least a series of slightly flat surfaces; and By breaking the erosion debris, the semiconductor crystal A is crystallized. Be separating step separates the base substrate. 2. The method of manufacturing a semiconductor crystal according to item 1 of the claim, in which the crystal growth step described above sets the thickness of the semiconductor crystal A to 50 0 // m or more. 3 · = The method of manufacturing a semiconductor crystal according to the item of the scope of the patent application, wherein 'the semiconductor crystal A and the base substrate are cooled or heated,' and the thermal expansion coefficient difference between the semiconductor crystal A and the base substrate is generated. The stress' is used to break the above-mentioned erosion debris. 4 · The method for manufacturing a semiconductor crystal according to item 1 of the scope of patent application, wherein the uppermost layer of the above-mentioned Xuanjing layer or the seed layer is made of gallium nitride (GaN)