TW517326B - Electrostatic chucking device and manufacturing method thereof - Google Patents
Electrostatic chucking device and manufacturing method thereof Download PDFInfo
- Publication number
- TW517326B TW517326B TW90119917A TW90119917A TW517326B TW 517326 B TW517326 B TW 517326B TW 90119917 A TW90119917 A TW 90119917A TW 90119917 A TW90119917 A TW 90119917A TW 517326 B TW517326 B TW 517326B
- Authority
- TW
- Taiwan
- Prior art keywords
- insulating layer
- film
- polyimide
- electrostatic chuck
- layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 58
- 239000002313 adhesive film Substances 0.000 claims abstract description 44
- 229920001721 polyimide Polymers 0.000 claims abstract description 44
- 229920006259 thermoplastic polyimide Polymers 0.000 claims abstract description 33
- 238000009413 insulation Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 27
- 230000006835 compression Effects 0.000 claims abstract description 10
- 238000007906 compression Methods 0.000 claims abstract description 10
- 238000010030 laminating Methods 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims description 22
- 239000004642 Polyimide Substances 0.000 claims description 18
- 238000002788 crimping Methods 0.000 claims description 12
- 239000011888 foil Substances 0.000 claims description 10
- 229910000838 Al alloy Inorganic materials 0.000 claims description 7
- 229920001169 thermoplastic Polymers 0.000 claims description 5
- 229920002098 polyfluorene Polymers 0.000 claims description 3
- 239000004416 thermosoftening plastic Substances 0.000 claims description 3
- -1 fluorene imine Chemical class 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 210000002784 stomach Anatomy 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 150000003949 imides Chemical class 0.000 claims 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 115
- 235000012431 wafers Nutrition 0.000 description 35
- 239000000853 adhesive Substances 0.000 description 17
- 230000001070 adhesive effect Effects 0.000 description 17
- 238000001179 sorption measurement Methods 0.000 description 16
- 238000012360 testing method Methods 0.000 description 13
- 239000012790 adhesive layer Substances 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 229910052770 Uranium Inorganic materials 0.000 description 6
- 239000001307 helium Substances 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 6
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 6
- 239000004809 Teflon Substances 0.000 description 5
- 229920006362 Teflon® Polymers 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 239000011889 copper foil Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229920006332 epoxy adhesive Polymers 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 150000002466 imines Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 241000446313 Lamella Species 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- 239000004433 Thermoplastic polyurethane Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- NTXGQCSETZTARF-UHFFFAOYSA-N buta-1,3-diene;prop-2-enenitrile Chemical compound C=CC=C.C=CC#N NTXGQCSETZTARF-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/269—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension including synthetic resin or polymer layer or component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31721—Of polyimide
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000246740A JP4753460B2 (ja) | 2000-08-16 | 2000-08-16 | 静電チャック及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW517326B true TW517326B (en) | 2003-01-11 |
Family
ID=18736992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW90119917A TW517326B (en) | 2000-08-16 | 2001-08-14 | Electrostatic chucking device and manufacturing method thereof |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6813134B2 (enExample) |
| EP (1) | EP1180793A3 (enExample) |
| JP (1) | JP4753460B2 (enExample) |
| KR (1) | KR100691098B1 (enExample) |
| TW (1) | TW517326B (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543813A (zh) * | 2010-12-16 | 2012-07-04 | 应用材料公司 | 用于半导体晶圆处理的高效率静电夹盘组件 |
| TWI401768B (zh) * | 2008-09-09 | 2013-07-11 | Komico Ltd | 包含用以降低熱應力之緩衝層之靜電夾頭 |
| TWI453857B (zh) * | 2007-08-02 | 2014-09-21 | Ulvac Inc | Manufacturing method of electrostatic chuck mechanism |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100912003B1 (ko) * | 2003-01-06 | 2009-08-14 | 주식회사 코미코 | 웨이퍼 주변을 보호하는 반도체 장비용 정전척 |
| KR100899292B1 (ko) * | 2003-01-06 | 2009-05-26 | 주식회사 코미코 | 수명을 연장시키는 절연막을 갖는 반도체 장비용 정전척 |
| JP2004235563A (ja) * | 2003-01-31 | 2004-08-19 | Tomoegawa Paper Co Ltd | 静電チャック装置用電極シート及びこれを用いた静電チャック装置 |
| US7084492B2 (en) * | 2003-06-30 | 2006-08-01 | Intel Corporation | Underfill and mold compounds including siloxane-based aromatic diamines |
| US6944028B1 (en) * | 2004-06-19 | 2005-09-13 | C-One Technology Corporation | Storage memory device |
| JP2006049357A (ja) * | 2004-07-30 | 2006-02-16 | Toto Ltd | 静電チャックおよび静電チャックを搭載した装置 |
| US7648914B2 (en) * | 2004-10-07 | 2010-01-19 | Applied Materials, Inc. | Method for etching having a controlled distribution of process results |
| US7544251B2 (en) * | 2004-10-07 | 2009-06-09 | Applied Materials, Inc. | Method and apparatus for controlling temperature of a substrate |
| US7436645B2 (en) | 2004-10-07 | 2008-10-14 | Applied Materials, Inc. | Method and apparatus for controlling temperature of a substrate |
| US8226769B2 (en) * | 2006-04-27 | 2012-07-24 | Applied Materials, Inc. | Substrate support with electrostatic chuck having dual temperature zones |
| US9275887B2 (en) | 2006-07-20 | 2016-03-01 | Applied Materials, Inc. | Substrate processing with rapid temperature gradient control |
| US8123902B2 (en) * | 2007-03-21 | 2012-02-28 | Applied Materials, Inc. | Gas flow diffuser |
| JP4976915B2 (ja) * | 2007-05-08 | 2012-07-18 | 新光電気工業株式会社 | 静電チャックおよび静電チャックの製造方法 |
| TWI484576B (zh) | 2007-12-19 | 2015-05-11 | Lam Res Corp | 半導體真空處理設備用之薄膜黏接劑 |
| KR101553422B1 (ko) * | 2007-12-19 | 2015-09-15 | 램 리써치 코포레이션 | 플라즈마 처리 장치를 위한 복합 샤워헤드 전극 어셈블리 |
| US8876024B2 (en) | 2008-01-10 | 2014-11-04 | Applied Materials, Inc. | Heated showerhead assembly |
| US8043433B2 (en) * | 2008-02-11 | 2011-10-25 | Applied Materials, Inc. | High efficiency electro-static chucks for semiconductor wafer processing |
| TWI475594B (zh) | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
| CN104538507B (zh) * | 2008-06-02 | 2017-08-15 | Lg伊诺特有限公司 | 用于制备半导体发光装置的方法 |
| US9520314B2 (en) * | 2008-12-19 | 2016-12-13 | Applied Materials, Inc. | High temperature electrostatic chuck bonding adhesive |
| JP5193886B2 (ja) * | 2009-01-14 | 2013-05-08 | 株式会社巴川製紙所 | 静電チャック装置の補修方法および補修装置、ならびに静電チャック装置 |
| US8861170B2 (en) | 2009-05-15 | 2014-10-14 | Entegris, Inc. | Electrostatic chuck with photo-patternable soft protrusion contact surface |
| SG176059A1 (en) | 2009-05-15 | 2011-12-29 | Entegris Inc | Electrostatic chuck with polymer protrusions |
| WO2011149918A2 (en) | 2010-05-28 | 2011-12-01 | Entegris, Inc. | High surface resistivity electrostatic chuck |
| JP5885404B2 (ja) * | 2010-08-04 | 2016-03-15 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
| EP2490073B1 (en) * | 2011-02-18 | 2015-09-23 | ASML Netherlands BV | Substrate holder, lithographic apparatus, and method of manufacturing a substrate holder |
| KR20130025025A (ko) * | 2011-09-01 | 2013-03-11 | 주식회사 코미코 | 정전척 |
| EP3550364A1 (en) | 2012-02-03 | 2019-10-09 | ASML Netherlands B.V. | Substrate holder, lithographic apparatus and method of manufacturing a substrate holder |
| KR101970301B1 (ko) | 2012-07-11 | 2019-04-18 | 삼성전자주식회사 | 웨이퍼 테스트 장치 |
| JP5981358B2 (ja) * | 2013-01-23 | 2016-08-31 | 東京エレクトロン株式会社 | 伝熱シート貼付方法 |
| KR102046534B1 (ko) * | 2013-01-25 | 2019-11-19 | 삼성전자주식회사 | 기판 가공 방법 |
| CN104752301B (zh) * | 2013-12-31 | 2018-05-25 | 北京北方华创微电子装备有限公司 | 一种静电卡盘以及腔室 |
| KR102311586B1 (ko) | 2014-12-26 | 2021-10-12 | 삼성디스플레이 주식회사 | 증착 장치 및 증착 장치 내 기판 정렬 방법 |
| KR102373326B1 (ko) | 2014-12-26 | 2022-03-11 | 삼성디스플레이 주식회사 | 증착 장치 및 증착 장치 내 기판 정렬 방법 |
| JP6123952B1 (ja) * | 2015-08-27 | 2017-05-10 | 住友大阪セメント株式会社 | 静電チャック装置 |
| US10570257B2 (en) | 2015-11-16 | 2020-02-25 | Applied Materials, Inc. | Copolymerized high temperature bonding component |
| JP6616363B2 (ja) * | 2017-09-05 | 2019-12-04 | 日本特殊陶業株式会社 | 保持装置 |
| CN110473824A (zh) * | 2019-09-05 | 2019-11-19 | 苏州芯慧联半导体科技有限公司 | 一种半导体用可再生静电卡盘及其制造方法 |
| CN113613411B (zh) * | 2021-09-23 | 2023-04-07 | 浙江清华柔性电子技术研究院 | 柔性电路基板及其制备方法和应用 |
| CN116646299A (zh) * | 2023-06-09 | 2023-08-25 | 拓荆创益(沈阳)半导体设备有限公司 | 静电吸盘及其制备方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6131636U (ja) * | 1984-07-31 | 1986-02-26 | 株式会社 徳田製作所 | 静電チヤツク |
| JPS63168072A (ja) * | 1986-12-27 | 1988-07-12 | 住友ベークライト株式会社 | 金属ベ−ス印刷回路用基板 |
| JPH01240243A (ja) * | 1988-03-18 | 1989-09-25 | Tokuda Seisakusho Ltd | 電極およびその製造方法 |
| JPH0227748A (ja) * | 1988-07-16 | 1990-01-30 | Tomoegawa Paper Co Ltd | 静電チャック装置及びその作成方法 |
| JPH05152742A (ja) * | 1991-11-25 | 1993-06-18 | Hitachi Chem Co Ltd | 金属はく張りセラミツク基板 |
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-
2000
- 2000-08-16 JP JP2000246740A patent/JP4753460B2/ja not_active Expired - Lifetime
-
2001
- 2001-08-10 US US09/925,739 patent/US6813134B2/en not_active Expired - Lifetime
- 2001-08-14 KR KR1020010048966A patent/KR100691098B1/ko not_active Expired - Lifetime
- 2001-08-14 TW TW90119917A patent/TW517326B/zh not_active IP Right Cessation
- 2001-08-16 EP EP20010306975 patent/EP1180793A3/en not_active Withdrawn
-
2004
- 2004-02-10 US US10/774,472 patent/US7411773B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI453857B (zh) * | 2007-08-02 | 2014-09-21 | Ulvac Inc | Manufacturing method of electrostatic chuck mechanism |
| TWI401768B (zh) * | 2008-09-09 | 2013-07-11 | Komico Ltd | 包含用以降低熱應力之緩衝層之靜電夾頭 |
| CN102543813A (zh) * | 2010-12-16 | 2012-07-04 | 应用材料公司 | 用于半导体晶圆处理的高效率静电夹盘组件 |
| CN105914175A (zh) * | 2010-12-16 | 2016-08-31 | 应用材料公司 | 用于半导体晶圆处理的高效率静电夹盘组件 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20040160021A1 (en) | 2004-08-19 |
| EP1180793A3 (en) | 2004-06-16 |
| KR20020014722A (ko) | 2002-02-25 |
| EP1180793A2 (en) | 2002-02-20 |
| JP2002064134A (ja) | 2002-02-28 |
| US20020021545A1 (en) | 2002-02-21 |
| KR100691098B1 (ko) | 2007-03-09 |
| US6813134B2 (en) | 2004-11-02 |
| US7411773B2 (en) | 2008-08-12 |
| JP4753460B2 (ja) | 2011-08-24 |
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