TW515085B - Semiconductor device, method of manufacturing the same and resistor - Google Patents

Semiconductor device, method of manufacturing the same and resistor Download PDF

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Publication number
TW515085B
TW515085B TW090112074A TW90112074A TW515085B TW 515085 B TW515085 B TW 515085B TW 090112074 A TW090112074 A TW 090112074A TW 90112074 A TW90112074 A TW 90112074A TW 515085 B TW515085 B TW 515085B
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
semiconductor
layer
junction
film
Prior art date
Application number
TW090112074A
Other languages
English (en)
Chinese (zh)
Inventor
Takashi Ipposhi
Toshiaki Iwamatsu
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW515085B publication Critical patent/TW515085B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW090112074A 2000-06-13 2001-05-21 Semiconductor device, method of manufacturing the same and resistor TW515085B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000176884 2000-06-13
JP2000322634A JP4988086B2 (ja) 2000-06-13 2000-10-23 半導体装置及びその製造方法並びに抵抗器及び半導体素子

Publications (1)

Publication Number Publication Date
TW515085B true TW515085B (en) 2002-12-21

Family

ID=26593831

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090112074A TW515085B (en) 2000-06-13 2001-05-21 Semiconductor device, method of manufacturing the same and resistor

Country Status (6)

Country Link
US (4) US6707105B2 (enExample)
JP (1) JP4988086B2 (enExample)
KR (1) KR100549742B1 (enExample)
DE (1) DE10119775A1 (enExample)
FR (1) FR2810156B1 (enExample)
TW (1) TW515085B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4988086B2 (ja) * 2000-06-13 2012-08-01 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法並びに抵抗器及び半導体素子
JP3719650B2 (ja) 2000-12-22 2005-11-24 松下電器産業株式会社 半導体装置
JP4413841B2 (ja) * 2005-10-03 2010-02-10 株式会社東芝 半導体記憶装置及びその製造方法
US7411409B2 (en) * 2005-11-17 2008-08-12 P.A. Semi, Inc. Digital leakage detector that detects transistor leakage current in an integrated circuit
WO2009101696A1 (ja) 2008-02-14 2009-08-20 Hidekazu Hirokawa 眼球運動の視軸照射軸同軸化追尾装置の作動方法
JP5430907B2 (ja) * 2008-10-31 2014-03-05 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
KR102771900B1 (ko) * 2019-12-09 2025-02-25 삼성전자주식회사 도핑 영역을 갖는 저항 소자

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02309661A (ja) * 1989-05-24 1990-12-25 Toshiba Corp 半導体集積回路
JP3188779B2 (ja) * 1992-02-25 2001-07-16 セイコーインスツルメンツ株式会社 半導体装置
JP3347423B2 (ja) * 1993-08-31 2002-11-20 キヤノン株式会社 液晶表示装置
JP3778581B2 (ja) * 1993-07-05 2006-05-24 三菱電機株式会社 半導体装置およびその製造方法
US5874768A (en) 1994-06-15 1999-02-23 Nippondenso Co., Ltd. Semiconductor device having a high breakdown voltage
JPH08130295A (ja) 1994-09-08 1996-05-21 Mitsubishi Electric Corp 半導体記憶装置および半導体装置
JP3361922B2 (ja) * 1994-09-13 2003-01-07 株式会社東芝 半導体装置
JP3397516B2 (ja) * 1995-06-08 2003-04-14 三菱電機株式会社 半導体記憶装置及び半導体集積回路装置
JPH11195712A (ja) * 1997-11-05 1999-07-21 Denso Corp 半導体装置およびその製造方法
JP4604296B2 (ja) * 1999-02-09 2011-01-05 ソニー株式会社 固体撮像装置及びその製造方法
JP2001077368A (ja) * 1999-09-03 2001-03-23 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP4988086B2 (ja) * 2000-06-13 2012-08-01 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法並びに抵抗器及び半導体素子

Also Published As

Publication number Publication date
KR20010112068A (ko) 2001-12-20
US7078767B2 (en) 2006-07-18
FR2810156A1 (fr) 2001-12-14
US6707105B2 (en) 2004-03-16
JP2002076111A (ja) 2002-03-15
JP4988086B2 (ja) 2012-08-01
US20090051009A1 (en) 2009-02-26
KR100549742B1 (ko) 2006-02-08
US20010052620A1 (en) 2001-12-20
DE10119775A1 (de) 2002-01-10
US20040094803A1 (en) 2004-05-20
US20060244064A1 (en) 2006-11-02
US7449749B2 (en) 2008-11-11
FR2810156B1 (fr) 2004-07-02

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