TW507266B - Method and system for manufacturing semiconductor device - Google Patents

Method and system for manufacturing semiconductor device Download PDF

Info

Publication number
TW507266B
TW507266B TW090116345A TW90116345A TW507266B TW 507266 B TW507266 B TW 507266B TW 090116345 A TW090116345 A TW 090116345A TW 90116345 A TW90116345 A TW 90116345A TW 507266 B TW507266 B TW 507266B
Authority
TW
Taiwan
Prior art keywords
mentioned
processing
film
manufacturing
semiconductor device
Prior art date
Application number
TW090116345A
Other languages
English (en)
Chinese (zh)
Inventor
Toshiaki Ohmori
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW507266B publication Critical patent/TW507266B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Weting (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW090116345A 2000-11-16 2001-07-04 Method and system for manufacturing semiconductor device TW507266B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000349027A JP4437611B2 (ja) 2000-11-16 2000-11-16 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW507266B true TW507266B (en) 2002-10-21

Family

ID=18822503

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090116345A TW507266B (en) 2000-11-16 2001-07-04 Method and system for manufacturing semiconductor device

Country Status (4)

Country Link
US (1) US20020056700A1 (en:Method)
JP (1) JP4437611B2 (en:Method)
KR (1) KR100437221B1 (en:Method)
TW (1) TW507266B (en:Method)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006518925A (ja) * 2002-08-28 2006-08-17 東京エレクトロン株式会社 半導体エッチング処理の力学的モデル化及び手法最適化のための方法およびシステム
US6842661B2 (en) * 2002-09-30 2005-01-11 Advanced Micro Devices, Inc. Process control at an interconnect level
US7265382B2 (en) * 2002-11-12 2007-09-04 Applied Materials, Inc. Method and apparatus employing integrated metrology for improved dielectric etch efficiency
US8257546B2 (en) 2003-04-11 2012-09-04 Applied Materials, Inc. Method and system for monitoring an etch process
JP2004319574A (ja) * 2003-04-11 2004-11-11 Trecenti Technologies Inc 半導体装置の製造方法、半導体製造装置の自動運転方法および自動運転システム、並びにｃｍｐ装置の自動運転方法
JP2007500941A (ja) * 2003-07-31 2007-01-18 エフエスアイ インターナショナル インコーポレイテッド 高度に均一な酸化物層、とりわけ超薄層の調節された成長
EP1663534A1 (en) * 2003-09-11 2006-06-07 FSI International, Inc. Acoustic diffusers for acoustic field uniformity
TW200517192A (en) * 2003-09-11 2005-06-01 Fsi Int Inc Semiconductor wafer immersion systems and treatments using modulated acoustic energy
JP4305401B2 (ja) * 2005-02-28 2009-07-29 セイコーエプソン株式会社 半導体装置
JP2006245036A (ja) * 2005-02-28 2006-09-14 Seiko Epson Corp 素子分離層の形成方法及び電子デバイスの製造方法、ｃｍｐ装置
US7596421B2 (en) 2005-06-21 2009-09-29 Kabushik Kaisha Toshiba Process control system, process control method, and method of manufacturing electronic apparatus
US8070972B2 (en) * 2006-03-30 2011-12-06 Tokyo Electron Limited Etching method and etching apparatus
JP4990548B2 (ja) 2006-04-07 2012-08-01 株式会社日立製作所 半導体装置の製造方法
JP5076426B2 (ja) * 2006-09-29 2012-11-21 富士通セミコンダクター株式会社 半導体装置の製造方法
JP4971050B2 (ja) 2007-06-21 2012-07-11 株式会社日立製作所 半導体装置の寸法測定装置
JP5401797B2 (ja) 2008-02-06 2014-01-29 富士通セミコンダクター株式会社 半導体装置の製造方法及び半導体装置製造システム
JP2010087300A (ja) * 2008-09-30 2010-04-15 Toshiba Corp 半導体装置の製造方法
JP5853382B2 (ja) * 2011-03-11 2016-02-09 ソニー株式会社 半導体装置の製造方法、及び電子機器の製造方法
US9005464B2 (en) * 2011-06-27 2015-04-14 International Business Machines Corporation Tool for manufacturing semiconductor structures and method of use
CN104409348B (zh) * 2014-11-10 2017-08-08 成都士兰半导体制造有限公司 沟槽器件的制作方法
WO2018211568A1 (ja) * 2017-05-15 2018-11-22 三菱電機株式会社 半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060731A (ja) * 1983-09-14 1985-04-08 Hitachi Ltd 半導体装置の製法
US5399229A (en) * 1993-05-13 1995-03-21 Texas Instruments Incorporated System and method for monitoring and evaluating semiconductor wafer fabrication
KR19980014172A (ko) * 1996-08-08 1998-05-15 김광호 반도체 제조공정의 오버레이 측정방법
JP2867982B2 (ja) * 1996-11-29 1999-03-10 日本電気株式会社 半導体装置の製造装置
US6148239A (en) * 1997-12-12 2000-11-14 Advanced Micro Devices, Inc. Process control system using feed forward control threads based on material groups
KR100251279B1 (ko) * 1997-12-26 2000-04-15 윤종용 반도체 제조용 증착설비의 막두께 조절방법
KR100382021B1 (ko) * 2000-02-03 2003-04-26 가부시끼가이샤 도시바 반도체 장치 제조 방법, 반도체 장치 제조 지원 시스템, 및 반도체 장치 제조 시스템

Also Published As

Publication number Publication date
JP2002151465A (ja) 2002-05-24
JP4437611B2 (ja) 2010-03-24
US20020056700A1 (en) 2002-05-16
KR20020038458A (ko) 2002-05-23
KR100437221B1 (ko) 2004-06-23

Similar Documents

Publication Publication Date Title
TW507266B (en) Method and system for manufacturing semiconductor device
CN107863290B (zh) 形成包含楼梯台阶型结构的半导体装置结构的方法及相关半导体装置
TWI252387B (en) An advanced process control approach for cu interconnect wiring sheet resistance control
TWI402976B (zh) 非揮發性半導體儲存裝置及其製造方法
TW512486B (en) Semiconductor device and manufacturing method thereof
US20090275146A1 (en) Method and apparatus for manufacturing device
TW201117270A (en) Integrated nanostructure-based non-volatile memory fabrication
TW200830358A (en) Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
TW201937707A (zh) 使用自對準雙圖案化以切割密集線圖案的方法及結構
TW200402832A (en) Method of manufacturing multi-level contacts by sizing of contact sizes in integrated circuits
TW201246369A (en) Substrate processing method
TW201214630A (en) Non-volatile memory with flat cell structures and air gap isolation
JPH05135999A (ja) 誘電体膜コンデンサ
CN110456451B (zh) 一种区域厚膜氮化硅的制备方法
TW200945413A (en) Pattern forming method and semiconductor manufacturing device
TW200908080A (en) Methods for forming patterns
TWI222210B (en) Semiconductor device and method of manufacturing the same
JP2001007304A (ja) ダマシンＦｅＲＡＭセル構造およびその製造方法
TW521380B (en) Method for forming isolation layer of semiconductor device
CN111602224B (zh) 针对碳化钨膜改进附着和缺陷的技术
US6277760B1 (en) Method for fabricating ferroelectric capacitor
TW519700B (en) Method of manufacturing a semiconductor device
JP2009094379A (ja) 半導体装置の製造方法
TW395007B (en) A method of forming capacitor of semiconductor device and semiconductor capacitor formed thereby
CN107731832A (zh) 一种顶层选择栅切线的刻蚀工艺方法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees