TW494707B - Plasma processor with coil responsive to variable amplitude RF envelope - Google Patents
Plasma processor with coil responsive to variable amplitude RF envelope Download PDFInfo
- Publication number
- TW494707B TW494707B TW089112870A TW89112870A TW494707B TW 494707 B TW494707 B TW 494707B TW 089112870 A TW089112870 A TW 089112870A TW 89112870 A TW89112870 A TW 89112870A TW 494707 B TW494707 B TW 494707B
- Authority
- TW
- Taiwan
- Prior art keywords
- coil
- amplitude
- plasma
- workpiece
- chamber
- Prior art date
Links
- 230000004907 flux Effects 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 24
- 238000012545 processing Methods 0.000 claims description 24
- 230000005284 excitation Effects 0.000 claims description 21
- 238000005538 encapsulation Methods 0.000 claims description 17
- 239000002245 particle Substances 0.000 claims description 16
- 230000002079 cooperative effect Effects 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 6
- 230000001276 controlling effect Effects 0.000 claims description 3
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 206010061218 Inflammation Diseases 0.000 claims 1
- 239000000428 dust Substances 0.000 claims 1
- 230000004054 inflammatory process Effects 0.000 claims 1
- 230000004936 stimulating effect Effects 0.000 claims 1
- 235000021251 pulses Nutrition 0.000 description 27
- 238000005530 etching Methods 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000006378 damage Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000009832 plasma treatment Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005686 electrostatic field Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000001012 protector Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- HGUFODBRKLSHSI-UHFFFAOYSA-N 2,3,7,8-tetrachloro-dibenzo-p-dioxin Chemical compound O1C2=CC(Cl)=C(Cl)C=C2OC2=C1C=C(Cl)C(Cl)=C2 HGUFODBRKLSHSI-UHFFFAOYSA-N 0.000 description 1
- 241001424309 Arita Species 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- -1 dielectric Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/343,246 US6319355B1 (en) | 1999-06-30 | 1999-06-30 | Plasma processor with coil responsive to variable amplitude rf envelope |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW494707B true TW494707B (en) | 2002-07-11 |
Family
ID=23345299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089112870A TW494707B (en) | 1999-06-30 | 2000-07-13 | Plasma processor with coil responsive to variable amplitude RF envelope |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6319355B1 (enExample) |
| EP (1) | EP1190436B1 (enExample) |
| JP (1) | JP5031159B2 (enExample) |
| KR (1) | KR100748050B1 (enExample) |
| DE (1) | DE60039874D1 (enExample) |
| TW (1) | TW494707B (enExample) |
| WO (1) | WO2001001443A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI507092B (zh) * | 2009-06-25 | 2015-11-01 | Mks Instr Inc | 用於控制射頻功率之方法與系統 |
| TWI641042B (zh) * | 2013-07-26 | 2018-11-11 | 蘭姆研究公司 | 用於腔室內及腔室至腔室匹配之具有多參數的蝕刻速率模型化及其使用 |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6531029B1 (en) * | 2000-06-30 | 2003-03-11 | Lam Research Corporation | Vacuum plasma processor apparatus and method |
| US7096819B2 (en) * | 2001-03-30 | 2006-08-29 | Lam Research Corporation | Inductive plasma processor having coil with plural windings and method of controlling plasma density |
| US6583572B2 (en) * | 2001-03-30 | 2003-06-24 | Lam Research Corporation | Inductive plasma processor including current sensor for plasma excitation coil |
| US6597117B2 (en) * | 2001-11-30 | 2003-07-22 | Samsung Austin Semiconductor, L.P. | Plasma coil |
| US7169255B2 (en) * | 2002-02-15 | 2007-01-30 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
| US6783629B2 (en) | 2002-03-11 | 2004-08-31 | Yuri Glukhoy | Plasma treatment apparatus with improved uniformity of treatment and method for improving uniformity of plasma treatment |
| US6700090B2 (en) * | 2002-04-26 | 2004-03-02 | Hitachi High-Technologies Corporation | Plasma processing method and plasma processing apparatus |
| US6905626B2 (en) * | 2002-07-24 | 2005-06-14 | Unaxis Usa Inc. | Notch-free etching of high aspect SOI structures using alternating deposition and etching and pulsed plasma |
| US7147759B2 (en) * | 2002-09-30 | 2006-12-12 | Zond, Inc. | High-power pulsed magnetron sputtering |
| KR100486724B1 (ko) * | 2002-10-15 | 2005-05-03 | 삼성전자주식회사 | 사행 코일 안테나를 구비한 유도결합 플라즈마 발생장치 |
| US6896773B2 (en) * | 2002-11-14 | 2005-05-24 | Zond, Inc. | High deposition rate sputtering |
| US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
| US9771648B2 (en) * | 2004-08-13 | 2017-09-26 | Zond, Inc. | Method of ionized physical vapor deposition sputter coating high aspect-ratio structures |
| US9123508B2 (en) * | 2004-02-22 | 2015-09-01 | Zond, Llc | Apparatus and method for sputtering hard coatings |
| WO2006036846A1 (en) * | 2004-09-24 | 2006-04-06 | Zond, Inc. | Apparatus for generating high-current electrical discharges |
| US8192576B2 (en) * | 2006-09-20 | 2012-06-05 | Lam Research Corporation | Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing |
| US20080204795A1 (en) * | 2007-02-23 | 2008-08-28 | Samsung Electronics Co., Ltd. | Data transmission apparatus and method of controlling the same and method of processing data to be printed onto a printable medium |
| US20080230008A1 (en) * | 2007-03-21 | 2008-09-25 | Alexander Paterson | Plasma species and uniformity control through pulsed vhf operation |
| US20090004836A1 (en) * | 2007-06-29 | 2009-01-01 | Varian Semiconductor Equipment Associates, Inc. | Plasma doping with enhanced charge neutralization |
| US9123509B2 (en) | 2007-06-29 | 2015-09-01 | Varian Semiconductor Equipment Associates, Inc. | Techniques for plasma processing a substrate |
| US20090017229A1 (en) * | 2007-07-10 | 2009-01-15 | Varian Semiconductor Equipment Associates, Inc. | Processing System Platen having a Variable Thermal Conductivity Profile |
| US7927986B2 (en) * | 2008-07-22 | 2011-04-19 | Varian Semiconductor Equipment Associates, Inc. | Ion implantation with heavy halogenide compounds |
| US20100048018A1 (en) * | 2008-08-25 | 2010-02-25 | Varian Semiconductor Equipment Associates, Inc. | Doped Layers for Reducing Electromigration |
| JP5227245B2 (ja) * | 2009-04-28 | 2013-07-03 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5546921B2 (ja) * | 2010-03-26 | 2014-07-09 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
| US8828883B2 (en) * | 2010-08-24 | 2014-09-09 | Micron Technology, Inc. | Methods and apparatuses for energetic neutral flux generation for processing a substrate |
| US10157729B2 (en) | 2012-02-22 | 2018-12-18 | Lam Research Corporation | Soft pulsing |
| US20130256271A1 (en) * | 2012-04-03 | 2013-10-03 | Theodoros Panagopoulos | Methods and apparatuses for controlling plasma in a plasma processing chamber |
| US9460894B2 (en) | 2013-06-28 | 2016-10-04 | Lam Research Corporation | Controlling ion energy within a plasma chamber |
| TWI501307B (zh) * | 2013-07-31 | 2015-09-21 | 盛美半導體設備（上海）有限公司 | Pulse electrochemical polishing method and device |
| US10573496B2 (en) * | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
| EP3088435A1 (de) | 2015-04-28 | 2016-11-02 | Sika Technology AG | Zweistufiges verfahren zur herstellung eines polyurethan-heissschmelzklebstoffs mit niedrigem gehalt an monomeren diisocyanaten und hoher anfangsfestigkeit |
| TW202209401A (zh) * | 2020-05-01 | 2022-03-01 | 美商得昇科技股份有限公司 | 用於表面處理製程之脈衝式感應耦合電漿的方法及設備 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2212974B (en) | 1987-11-25 | 1992-02-12 | Fuji Electric Co Ltd | Plasma processing apparatus |
| EP0395415B1 (en) | 1989-04-27 | 1995-03-15 | Fujitsu Limited | Apparatus for and method of processing a semiconductor device using microwave-generated plasma |
| US4948458A (en) | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
| US5304279A (en) | 1990-08-10 | 1994-04-19 | International Business Machines Corporation | Radio frequency induction/multipole plasma processing tool |
| JPH08979B2 (ja) * | 1991-12-06 | 1996-01-10 | 日新電機株式会社 | プラズマｃｖｄ法及び装置 |
| US5226967A (en) | 1992-05-14 | 1993-07-13 | Lam Research Corporation | Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber |
| US5277751A (en) | 1992-06-18 | 1994-01-11 | Ogle John S | Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window |
| KR100238627B1 (ko) | 1993-01-12 | 2000-01-15 | 히가시 데쓰로 | 플라즈마 처리장치 |
| US5401350A (en) | 1993-03-08 | 1995-03-28 | Lsi Logic Corporation | Coil configurations for improved uniformity in inductively coupled plasma systems |
| JP3202877B2 (ja) * | 1994-08-30 | 2001-08-27 | 東京エレクトロン株式会社 | プラズマアッシング装置 |
| JP3105403B2 (ja) | 1994-09-14 | 2000-10-30 | 松下電器産業株式会社 | プラズマ処理装置 |
| JP2845163B2 (ja) * | 1994-10-27 | 1999-01-13 | 日本電気株式会社 | プラズマ処理方法及びその装置 |
| US5731565A (en) * | 1995-07-27 | 1998-03-24 | Lam Research Corporation | Segmented coil for generating plasma in plasma processing equipment |
| JPH0982495A (ja) * | 1995-09-18 | 1997-03-28 | Toshiba Corp | プラズマ生成装置およびプラズマ生成方法 |
| CA2207154A1 (en) * | 1996-06-10 | 1997-12-10 | Lam Research Corporation | Inductively coupled source for deriving substantially uniform plasma flux |
| US5800619A (en) | 1996-06-10 | 1998-09-01 | Lam Research Corporation | Vacuum plasma processor having coil with minimum magnetic field in its center |
| US5759280A (en) | 1996-06-10 | 1998-06-02 | Lam Research Corporation | Inductively coupled source for deriving substantially uniform plasma flux |
| JP3220394B2 (ja) * | 1996-09-27 | 2001-10-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP3559429B2 (ja) * | 1997-07-02 | 2004-09-02 | 松下電器産業株式会社 | プラズマ処理方法 |
| TW396384B (en) | 1997-08-07 | 2000-07-01 | Applied Materials Inc | Modulated power for ionized metal plasma deposition |
-
1999
- 1999-06-30 US US09/343,246 patent/US6319355B1/en not_active Expired - Lifetime
-
2000
- 2000-06-22 EP EP00946836A patent/EP1190436B1/en not_active Expired - Lifetime
- 2000-06-22 JP JP2001506574A patent/JP5031159B2/ja not_active Expired - Lifetime
- 2000-06-22 KR KR1020017016487A patent/KR100748050B1/ko not_active Expired - Lifetime
- 2000-06-22 DE DE60039874T patent/DE60039874D1/de not_active Expired - Lifetime
- 2000-06-22 WO PCT/US2000/017088 patent/WO2001001443A1/en not_active Ceased
- 2000-07-13 TW TW089112870A patent/TW494707B/zh not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI507092B (zh) * | 2009-06-25 | 2015-11-01 | Mks Instr Inc | 用於控制射頻功率之方法與系統 |
| TWI641042B (zh) * | 2013-07-26 | 2018-11-11 | 蘭姆研究公司 | 用於腔室內及腔室至腔室匹配之具有多參數的蝕刻速率模型化及其使用 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1190436A1 (en) | 2002-03-27 |
| KR20020031344A (ko) | 2002-05-01 |
| WO2001001443B1 (en) | 2001-02-08 |
| DE60039874D1 (de) | 2008-09-25 |
| KR100748050B1 (ko) | 2007-08-09 |
| JP5031159B2 (ja) | 2012-09-19 |
| WO2001001443A1 (en) | 2001-01-04 |
| JP2003503839A (ja) | 2003-01-28 |
| US6319355B1 (en) | 2001-11-20 |
| EP1190436B1 (en) | 2008-08-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |