KR100748050B1 - 가변 진폭의 ｒｆ 포락선에 응답하는 코일을 구비한플라즈마 처리기 - Google Patents

가변 진폭의 ｒｆ 포락선에 응답하는 코일을 구비한플라즈마 처리기 Download PDF

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KR100748050B1
KR100748050B1 KR1020017016487A KR20017016487A KR100748050B1 KR 100748050 B1 KR100748050 B1 KR 100748050B1 KR 1020017016487 A KR1020017016487 A KR 1020017016487A KR 20017016487 A KR20017016487 A KR 20017016487A KR 100748050 B1 KR100748050 B1 KR 100748050B1
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plasma
coil
amplitude
manufacturing process
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KR20020031344A (ko
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존 홀랜드
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020017016487A 1999-06-30 2000-06-22 가변 진폭의 ｒｆ 포락선에 응답하는 코일을 구비한플라즈마 처리기 Expired - Lifetime KR100748050B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/343,246 1999-06-30
US09/343,246 US6319355B1 (en) 1999-06-30 1999-06-30 Plasma processor with coil responsive to variable amplitude rf envelope

Publications (2)

Publication Number Publication Date
KR20020031344A KR20020031344A (ko) 2002-05-01
KR100748050B1 true KR100748050B1 (ko) 2007-08-09

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KR1020017016487A Expired - Lifetime KR100748050B1 (ko) 1999-06-30 2000-06-22 가변 진폭의 ｒｆ 포락선에 응답하는 코일을 구비한플라즈마 처리기

Country Status (7)

Country Link
US (1) US6319355B1 (enExample)
EP (1) EP1190436B1 (enExample)
JP (1) JP5031159B2 (enExample)
KR (1) KR100748050B1 (enExample)
DE (1) DE60039874D1 (enExample)
TW (1) TW494707B (enExample)
WO (1) WO2001001443A1 (enExample)

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US6597117B2 (en) * 2001-11-30 2003-07-22 Samsung Austin Semiconductor, L.P. Plasma coil
US7169255B2 (en) * 2002-02-15 2007-01-30 Hitachi High-Technologies Corporation Plasma processing apparatus
US6783629B2 (en) 2002-03-11 2004-08-31 Yuri Glukhoy Plasma treatment apparatus with improved uniformity of treatment and method for improving uniformity of plasma treatment
US6700090B2 (en) * 2002-04-26 2004-03-02 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
US6905626B2 (en) * 2002-07-24 2005-06-14 Unaxis Usa Inc. Notch-free etching of high aspect SOI structures using alternating deposition and etching and pulsed plasma
US7147759B2 (en) * 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
KR100486724B1 (ko) * 2002-10-15 2005-05-03 삼성전자주식회사 사행 코일 안테나를 구비한 유도결합 플라즈마 발생장치
US6896773B2 (en) * 2002-11-14 2005-05-24 Zond, Inc. High deposition rate sputtering
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
US9771648B2 (en) * 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US9123508B2 (en) * 2004-02-22 2015-09-01 Zond, Llc Apparatus and method for sputtering hard coatings
WO2006036846A1 (en) * 2004-09-24 2006-04-06 Zond, Inc. Apparatus for generating high-current electrical discharges
US8192576B2 (en) * 2006-09-20 2012-06-05 Lam Research Corporation Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing
US20080204795A1 (en) * 2007-02-23 2008-08-28 Samsung Electronics Co., Ltd. Data transmission apparatus and method of controlling the same and method of processing data to be printed onto a printable medium
US20080230008A1 (en) * 2007-03-21 2008-09-25 Alexander Paterson Plasma species and uniformity control through pulsed vhf operation
US20090004836A1 (en) * 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
US9123509B2 (en) 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
US20090017229A1 (en) * 2007-07-10 2009-01-15 Varian Semiconductor Equipment Associates, Inc. Processing System Platen having a Variable Thermal Conductivity Profile
US7927986B2 (en) * 2008-07-22 2011-04-19 Varian Semiconductor Equipment Associates, Inc. Ion implantation with heavy halogenide compounds
US20100048018A1 (en) * 2008-08-25 2010-02-25 Varian Semiconductor Equipment Associates, Inc. Doped Layers for Reducing Electromigration
JP5227245B2 (ja) * 2009-04-28 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置
US8659335B2 (en) * 2009-06-25 2014-02-25 Mks Instruments, Inc. Method and system for controlling radio frequency power
JP5546921B2 (ja) * 2010-03-26 2014-07-09 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US8828883B2 (en) * 2010-08-24 2014-09-09 Micron Technology, Inc. Methods and apparatuses for energetic neutral flux generation for processing a substrate
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US20130256271A1 (en) * 2012-04-03 2013-10-03 Theodoros Panagopoulos Methods and apparatuses for controlling plasma in a plasma processing chamber
US9460894B2 (en) 2013-06-28 2016-10-04 Lam Research Corporation Controlling ion energy within a plasma chamber
US9502221B2 (en) * 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
TWI501307B (zh) * 2013-07-31 2015-09-21 盛美半導體設備（上海）有限公司 Pulse electrochemical polishing method and device
US10573496B2 (en) * 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
EP3088435A1 (de) 2015-04-28 2016-11-02 Sika Technology AG Zweistufiges verfahren zur herstellung eines polyurethan-heissschmelzklebstoffs mit niedrigem gehalt an monomeren diisocyanaten und hoher anfangsfestigkeit
TW202209401A (zh) * 2020-05-01 2022-03-01 美商得昇科技股份有限公司 用於表面處理製程之脈衝式感應耦合電漿的方法及設備

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Also Published As

Publication number Publication date
EP1190436A1 (en) 2002-03-27
KR20020031344A (ko) 2002-05-01
TW494707B (en) 2002-07-11
WO2001001443B1 (en) 2001-02-08
DE60039874D1 (de) 2008-09-25
JP5031159B2 (ja) 2012-09-19
WO2001001443A1 (en) 2001-01-04
JP2003503839A (ja) 2003-01-28
US6319355B1 (en) 2001-11-20
EP1190436B1 (en) 2008-08-13

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