TW473956B - Semiconductor device and a process for forming the semiconductor device - Google Patents

Semiconductor device and a process for forming the semiconductor device Download PDF

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Publication number
TW473956B
TW473956B TW089126521A TW89126521A TW473956B TW 473956 B TW473956 B TW 473956B TW 089126521 A TW089126521 A TW 089126521A TW 89126521 A TW89126521 A TW 89126521A TW 473956 B TW473956 B TW 473956B
Authority
TW
Taiwan
Prior art keywords
metal portion
metal
semiconductor
semiconductor device
substrate
Prior art date
Application number
TW089126521A
Other languages
English (en)
Chinese (zh)
Inventor
Stuart E Greer
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of TW473956B publication Critical patent/TW473956B/zh

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Classifications

    • H10W72/071—
    • H10W72/019—
    • H10W72/20—
    • H10W72/012—
    • H10W72/072—
    • H10W72/07211—
    • H10W72/07232—
    • H10W72/07236—
    • H10W72/222—
    • H10W72/234—
    • H10W72/241—
    • H10W72/242—
    • H10W72/251—
    • H10W72/29—
    • H10W72/952—
    • H10W74/012—
    • H10W74/15—

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  • Wire Bonding (AREA)
TW089126521A 2000-01-03 2000-12-13 Semiconductor device and a process for forming the semiconductor device TW473956B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/476,810 US6346469B1 (en) 2000-01-03 2000-01-03 Semiconductor device and a process for forming the semiconductor device

Publications (1)

Publication Number Publication Date
TW473956B true TW473956B (en) 2002-01-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW089126521A TW473956B (en) 2000-01-03 2000-12-13 Semiconductor device and a process for forming the semiconductor device

Country Status (7)

Country Link
US (1) US6346469B1 (enExample)
JP (1) JP4698826B2 (enExample)
KR (1) KR100762111B1 (enExample)
CN (1) CN100355065C (enExample)
HK (1) HK1038439A1 (enExample)
SG (1) SG90219A1 (enExample)
TW (1) TW473956B (enExample)

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TWI551199B (zh) * 2014-04-16 2016-09-21 矽品精密工業股份有限公司 具電性連接結構之基板及其製法
US9666547B2 (en) 2002-10-08 2017-05-30 Honeywell International Inc. Method of refining solder materials

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US7368777B2 (en) * 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9666547B2 (en) 2002-10-08 2017-05-30 Honeywell International Inc. Method of refining solder materials
TWI551199B (zh) * 2014-04-16 2016-09-21 矽品精密工業股份有限公司 具電性連接結構之基板及其製法

Also Published As

Publication number Publication date
JP2001196409A (ja) 2001-07-19
SG90219A1 (en) 2002-07-23
KR100762111B1 (ko) 2007-10-02
US6346469B1 (en) 2002-02-12
CN100355065C (zh) 2007-12-12
CN1303130A (zh) 2001-07-11
KR20010070397A (ko) 2001-07-25
JP4698826B2 (ja) 2011-06-08
HK1038439A1 (zh) 2002-03-15

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