CN100355065C - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN100355065C
CN100355065C CNB001370901A CN00137090A CN100355065C CN 100355065 C CN100355065 C CN 100355065C CN B001370901 A CNB001370901 A CN B001370901A CN 00137090 A CN00137090 A CN 00137090A CN 100355065 C CN100355065 C CN 100355065C
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metal
salient point
metal level
semiconductor element
semiconductor device
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CNB001370901A
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CN1303130A (zh
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斯图尔特·E·格里尔
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NXP USA Inc
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Freescale Semiconductor Inc
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Abstract

半导体管芯(11)上形成的导电凸点(32)。通常，导电凸点(32)中的铅含量减少，流动温度不高于260℃，并减少了与α颗粒相关的缺陷。一个实施例中，导电凸点(32)几乎全含锡(20)，只有一个铅薄层(30)。铅(30)与部分锡(20)相互反应形成有接近铅锡共熔点的较低熔点的焊料。大部分锡(20)留下没有反应，能在半导体管芯(11)与封装衬底(42)之间形成隔离。可用其它金属和杂质来提高导电凸点(32)的机械性能和电性能。

Description

半导体器件及其制造方法
技术领域
本发明通常涉及半导体器件，更具体地涉及带导电凸点的半导体器件及其制造方法。
背景技术
当前的环境或健康问题与封装中铅用量的增加有关。许多当前流行的芯片倒装焊法中用的导电凸点含铅的比例较高。在一种叫做控制塌陷的芯片连接(C4)的特定类型的凸点中，凸点中含铅的比例约为97wt％，锡约为3wt％。这些凸点中出现了三种不同的缺陷。第1，铅的用量高于许多顾客想要的量，第2，凸点的流动所需的温度较高，第3，用铅通常会使半导体器件产生α(阿尔法)颗粒。
为了降低高的流动温度，采用了蒸发蔓延低共熔凸点(E3)。本优选实施例中，凸点通常包括在较厚的几乎全是铅的铅层下的较薄的锡层和顶上的较薄的锡层。在流动过程中，锡和铅在远离管芯处在不高于200℃的温度下易于流动，使在较低温度下形成好的芯片连接。E3凸点的缺点是，它们的含铅量仍然很高，而且有α颗粒问题。
为了减少α颗粒，产生了用两种不同类型的铅的想法。杂质极少的下层铅用通用的市售铅层覆盖。这就在加热和流动中出了问题，一些铅和来自市售铅层中的杂质会迁移到下层铅层中，因此，α颗粒的减少不是很明显。对于C4凸点也会有两个相同的缺点，即铅量太大和流动温度太高。
发明内容
本发明一方面涉及一种半导体器件，其特征是，有管芯互连焊盘的半导体管芯；和与管芯互连焊盘连接并有第1金属部分、第2金属部分以及被抑制熔点的导电凸点；其中，第1金属部分位于比第2金属部分更靠近半导体管芯的位置；第1金属部分比第2金属部分厚；以及第2金属部分是离半导体管芯最远的导电凸点的金属部分。
本发明在另一方面涉及一种制造半导体器件的方法，其特征是，使半导体管芯与衬底相互接触，其中，半导体管芯包括管芯互连焊盘，和包含第1金属层和第2金属层的导电凸点；第1金属层位于比第2金属层更靠近半导体管芯的位置；第1金属层比第2金属层厚；和，其中，第2金属层是离半导体管芯最远的导电凸点的金属层；使导电凸点经受热循环，以在第一金属部分中形成被抑制的熔点部分。
附图说明
用实例说明本发明，但不限于附图所示实例，图中相同的元件用同一个数字指示。
图1是形成了下凸点冶金后的半导体管芯的部分示意图；
图2是形成凸点的第1金属层后的图1所示衬底的剖视图；
图3是凸点形成中，形成覆盖第1金属层的第2金属层后图2所示衬底的剖视图；
图4是在封装衬底上设置凸点的过程中封装衬底和半导体管芯的部分剖视图；
图5是凸点流动时图4所示衬底的剖视图；
图6是在半导体管芯与封装衬底之间形成底层填充材料后图5所示衬底的剖视图。
具体实施方式
本行业的技术人员应看出，图中的元件只是为了使图能简化和清楚，但对各元件的大小没有限制。例如，图中的某些元件的尺寸可以比其它元件的尺寸放大，以有助于理解本发明的实施例。
在半导体管芯上形成导电凸点。导电凸点的铅含量通常已减少，而流动温度不高于260℃，并相应地减少了α颗粒。一个实施例中，导电凸点几乎全是锡，只有较薄的铅层。铅与一部分锡相互作用形成有接近铅和锡的共熔点的较低熔点的焊料。大多数的铅没进行反应，并使半导体管芯与封装衬底之间形成分离。可用其它金属和杂质来提高导电凸点的机械性能和电性能。本发明由权利要求书限定，阅读了对实施例的说明之后，能更好地理解本发明。
图1是半导体管芯11的部分剖视图。如图1所示，半导体管芯11包括绝缘层10。绝缘层10包含氮化物，氧化物，氮氧化物，或它们的组合物。绝缘层10中形成半导体管芯互连焊盘12。互连焊盘12含有主要为铝、铜、钨等的导电填充材料。这里用的“主要”规定为至少一半。在导电填料没淀积之前通常还形成了粘接层或阻挡层，但没有画出。互连焊盘12形成之后，在绝缘层10和互连焊盘12上形成钝化层(即膜保护层114)。通过钝化层14形成开口，以形成露出管芯互连焊盘12的位置的开口。
之后在钝化层14上形成可选的防刮伤层或α保护层16。保护层16通常含聚酰亚胺等材料。之后，在钝化层14与管芯互连焊盘12接触部分的聚酰亚胺层上形成小凸点金属层18。小凸点金属层18通常包括多层膜，例如，铬、铜、钛、钽、金、铂、钯、镍、钴、铁及其合金，也可以是其它不同金属的化合物。为了提高阻挡性能，根据需要还能含金属氮化物。小凸点金属层的厚度通常不大于1μm。
之后，在小凸点金属层18上形成凸点的主要部分。凸点主要部分包括图2所示的第1金属层20。本优选实施例中，第1金属层20全是锡或几乎全是锡，第1金属层20的厚度是25至75μm。形成第1金属层20的方法可包括物理真空淀积，蒸发镀覆(电镀或化学镀膜)等。除锡之外，还能用其它材料，如铝等。为了提高材料的机械性能和电性能，第1金属层20可含杂质。杂质的实例包括：铜、银、铟、铋、锑、锌等。另一实施例中，第1金属层20可包括至少两种不同导电元素构成的导电合金。为了避免铅带来的缺点，第1金属层20不含铅。
之后，在第1金属层20上形成第2金属层30，如图3所示。可用形成第1金属层20所用的任何方法形成第2金属层30。注意，可用不同的方法形成第1和第2金属层20和30。再看图3，在本优选实施例中，第2金属层30全含铅或几乎全含铅，膜厚为1至25μm。除铅之外，也能用其它材料，例如金、铋、铟、银、镓等。
到此为止，已形成了导电凸点32并包括第1金属层20(第1部分)和第2金属层(第2部分)30。在一个优选实施例中，导电凸点32有同样重要的特性。导电凸点32至少含2wt％的铅，通常含25wt％以下的铅。显然，导电凸点32的锡含量比铅含量多。第1金属层20的厚度至少是第2金属层20的厚度的3倍。第2金属层20离半导体管芯11最远。
如图4-6所示，半导体管芯11包括多个连到封装衬底的凸点。再看图4，绝缘层10、14和16(从图1至3)用一个数字40指示，半导体管芯还包括上述的半导体管芯互连焊盘12和导电凸点32。封装衬底通常含至少一部分有机材料。一个实施例中，除了封装衬底42中互连焊盘44和其它互连(没画)之外，封装衬底几乎全是有机材料。另一实施例中，封装衬底几乎包括陶瓷衬底，在面对半导体管芯11的它的露出表面上有较薄的有机层。有机层有沿露出的有机膜边缘设置的布线，或其它互连焊盘和互连线。
半导体管芯11放到封装衬底42上之前，封装衬底42和封装焊盘44露在焊剂中。该焊剂通常含能与沿互连焊盘44表面形成的氧化物反应的有机酸。有机酸的实例是包括己二酸、柠檬酸、马来酸、松香酸的羧酸。一个优选实施例中，可用免洗焊剂。免洗焊剂，可加较薄的焊剂层，不需要在把半导体管芯11连接到封装衬底42上之后进行清洗步骤。一个优选实施例中，为了提高导电凸点32与封装衬底42的互连焊盘之间的粘接性，可用助粘剂，如樟脑。加了焊剂之后，半导体管芯11放到封装衬底42上，使导电凸点与互连焊盘44接触，稍微加压，使导电凸点32更好地粘到封装互连焊盘44上。通常所加的力是0.07至0.10牛顿，使半导体管芯与封装衬底牢固粘接而在例行处理中不容易分开。
导电凸点32放到互连焊盘44上之后，对组件进行热循环处理，形成焊料，把导电凸点32粘接到互连焊盘44上。如图5所示，用箭头52指示加热，通常在至少是183℃的温度下进行加热。通常在不高于201℃的温度下进行该项加热操作。但是，另一实施例中，可用更高的温度。锡的熔点是231℃。因此，为了减少类似锡流动这样的事情出现，在高于231℃的温度下要不出现流动。由于是有机衬底，如果用其它材料构成第1和第2金属层，流动温度通常不高于260℃。
邻近第1和第2金属层20和30处的温度使这些金属层中的铅与锡相互反应生成有接近锡和铅的共熔点的受抑制的熔点的材料，当组合物中锡含量为63wt％，铅含量为37wt％时，熔点为183℃，在180至190℃的温度范围内。如图5所示，虚线54指示被抑制的熔点部分与第1金属层20的剩余部分之间的范围。尽管两部分之间不能清楚地识别或不连续的变化，该区域还是能一般的展示出来。该优选实施例中，焊料沿着互连焊盘44的边流到互连焊盘44上。但由于第1金属层有没熔化的部分，因此会出现间隙。
下面填充材料层60放在半导体管芯衬底40与封装衬底42之间。这横向包围导电凸点50，使组件有更好的机械硬度。下层填充材料通常包括在环氧混合物中的氧化铝、氧化硅等。
另一实施例中，在封装衬底的连接作用中，也可用其它实施例。例如，不需要用于键合的焊剂，也不用助粘剂，如樟脑。
本发明实施例有现有技术无法达到的优点。更具体地说，至少在一些实施例中用作第1和第2金属层的铅锡材料允许形成有接近铅和锡的共熔点的较低熔点的材料，允许在低于或不高于200℃的温度下进行流动步骤。在一些实施例中，如果第1金属层的熔点高于将熔化的低共熔点，则流动温度可以更高。其次，可极大地减少铅含量。导电凸点中铅含量通常不大于25wt％。
由于铅进一步从半导体管芯衬底中移出，因此类似α颗粒的缺陷明显减少。流动操作中使第1金属层20隔离。因为流动操作的温度低于第1金属层20的熔点，第1金属层20不熔化，只是形成导电凸点的焊料部分熔化。甚至在流动操作后，第1金属层20的剩余部分的厚度还是比焊料部分厚度大3倍，焊料部分的厚度通常是测量封装互连焊盘44的表面(侧边或顶表面)得到的。
按以上说明，已参照具体实施例说明了发明。但是，本行业的技术人员会发现，不脱离由以下的权利要求书确定的本发明的范围的情况下还会有各种改型和变化。因此，说明书和附图只是为了说明发明，而不是对发明的限制。所有这些改型和变化均属本发明范围内。
上面已结合具体实施例说明了本发明的好处，其它优点和解决问题的方案。但是，这些好处、优点、解决问题的方案，和可能引起好处、优点、或解决问题的方案而造成或变成更好判断的任何构件都不能成为任何权利要求或全部权利要求规定的关键的、所需的或主要的特征或构件。这里所用的术语“包括”或它的其它变化是覆盖非专用的包括，例如，工艺，方法，产品，或设备，它包括一系列的构件，不仅仅包括这些构件，还可能包括没有明确地列出的或固有的构件，例如，工艺，方法，产品或设备。

Claims (10)

1.一种半导体器件，其特征是，
有管芯互连焊盘的半导体管芯；和
与管芯互连焊盘连接并有第1金属部分、第2金属部分以及被抑制熔点的导电凸点；其中，
第1金属部分位于比第2金属部分更靠近半导体管芯的位置；
第1金属部分比第2金属部分厚；以及
第2金属部分是离半导体管芯最远的导电凸点的金属部分。
2.按权利要求1的半导体器件，其特征是，所述第2金属部分包含铅。
3.按权利要求1或2的半导体器件，其特征是：包含衬底互连焊盘的衬底，其中，衬底与半导体管芯隔开；衬底互连焊盘接触第2金属部分。
4.按权利要求1或2的半导体器件，其中，第1金属部分主要含锡。
5.按权利要求4的半导体器件，其中，导电凸点含至少2wt％的铅。
6.按权利要求1或2的半导体器件，其中，第1金属部分的厚度至少比第2金属部分的厚度厚3倍。
7.按权利要求1或2的半导体器件，其中按重量百分比为基础，第1金属部分主要是不包括铅的导电合金或非铅的第1元素。
8.一种制造半导体器件的方法，其特征是，
使半导体管芯与衬底相互接触，其中，半导体管芯包括管芯互连焊盘，和包含第1金属层和第2金属层的导电凸点；
第1金属层位于比第2金属层更靠近半导体管芯的位置；
第1金属层比第2金属层厚；和，
其中，第2金属层是离半导体管芯最远的导电凸点的金属层；
使导电凸点经受热循环，以在第1金属层中形成被抑制熔点的部分。
9.按权利要求8的方法，其中，在低于第1金属层熔点的温度下使一部分导电凸点流动。
10.按权利要求8的方法，其中，衬底含有机部分。
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JP4698826B2 (ja) 2011-06-08
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US6346469B1 (en) 2002-02-12
HK1038439A1 (zh) 2002-03-15
TW473956B (en) 2002-01-21
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