CN1137797C - 用于减少焊料中金属间化合物形成的镍合金薄膜 - Google Patents
用于减少焊料中金属间化合物形成的镍合金薄膜 Download PDFInfo
- Publication number
- CN1137797C CN1137797C CNB001217879A CN00121787A CN1137797C CN 1137797 C CN1137797 C CN 1137797C CN B001217879 A CNB001217879 A CN B001217879A CN 00121787 A CN00121787 A CN 00121787A CN 1137797 C CN1137797 C CN 1137797C
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- Prior art keywords
- layer
- alloy
- nickel
- scolder
- pad
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- Expired - Lifetime
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- 229910000990 Ni alloy Inorganic materials 0.000 title claims description 14
- 230000015572 biosynthetic process Effects 0.000 title description 9
- 229910052751 metal Inorganic materials 0.000 title description 5
- 239000002184 metal Substances 0.000 title description 5
- 150000001875 compounds Chemical class 0.000 title description 2
- 230000004907 flux Effects 0.000 title description 2
- 150000002739 metals Chemical class 0.000 title 1
- 238000005476 soldering Methods 0.000 title 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 95
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 47
- 239000010931 gold Substances 0.000 claims abstract description 37
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052737 gold Inorganic materials 0.000 claims abstract description 34
- 229910000679 solder Inorganic materials 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 21
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 19
- 239000000956 alloy Substances 0.000 claims abstract description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052718 tin Inorganic materials 0.000 claims abstract description 16
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 14
- 229910000765 intermetallic Inorganic materials 0.000 claims description 49
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 22
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 22
- 238000003466 welding Methods 0.000 claims description 19
- 238000005275 alloying Methods 0.000 claims description 18
- 238000009736 wetting Methods 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 13
- 229910052763 palladium Inorganic materials 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 11
- 238000009713 electroplating Methods 0.000 claims description 4
- 230000004927 fusion Effects 0.000 claims description 4
- 229910002058 ternary alloy Inorganic materials 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 230000008569 process Effects 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000004100 electronic packaging Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/365,683 | 1999-08-02 | ||
US09/365,683 US6130479A (en) | 1999-08-02 | 1999-08-02 | Nickel alloy films for reduced intermetallic formation in solder |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1282645A CN1282645A (zh) | 2001-02-07 |
CN1137797C true CN1137797C (zh) | 2004-02-11 |
Family
ID=23439900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001217879A Expired - Lifetime CN1137797C (zh) | 1999-08-02 | 2000-08-01 | 用于减少焊料中金属间化合物形成的镍合金薄膜 |
Country Status (4)
Country | Link |
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US (2) | US6130479A (zh) |
CN (1) | CN1137797C (zh) |
SG (1) | SG91877A1 (zh) |
TW (1) | TW461067B (zh) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6082610A (en) * | 1997-06-23 | 2000-07-04 | Ford Motor Company | Method of forming interconnections on electronic modules |
US6485843B1 (en) * | 2000-09-29 | 2002-11-26 | Altera Corporation | Apparatus and method for mounting BGA devices |
US6765277B2 (en) | 2002-01-15 | 2004-07-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Microelectronic fabrication with corrosion inhibited bond pad |
SG107587A1 (en) * | 2002-04-23 | 2004-12-29 | Agency Science Tech & Res | A solder interconnection having a layered barrier structure and method for forming same |
JP4817418B2 (ja) * | 2005-01-31 | 2011-11-16 | オンセミコンダクター・トレーディング・リミテッド | 回路装置の製造方法 |
US7241640B1 (en) * | 2005-02-08 | 2007-07-10 | Xilinx, Inc. | Solder ball assembly for a semiconductor device and method of fabricating same |
US7233074B2 (en) * | 2005-08-11 | 2007-06-19 | Texas Instruments Incorporated | Semiconductor device with improved contacts |
US8242378B2 (en) * | 2007-09-21 | 2012-08-14 | Agere Systems Inc. | Soldering method and related device for improved resistance to brittle fracture with an intermetallic compound region coupling a solder mass to an Ni layer which has a low concentration of P, wherein the amount of P in the underlying Ni layer is controlled as a function of the expected volume of the solder mass |
US7847399B2 (en) * | 2007-12-07 | 2010-12-07 | Texas Instruments Incorporated | Semiconductor device having solder-free gold bump contacts for stability in repeated temperature cycles |
CN101879640B (zh) * | 2009-05-06 | 2012-07-25 | 光洋应用材料科技股份有限公司 | 陶瓷溅镀靶材组件及其焊合方法 |
US8592995B2 (en) | 2009-07-02 | 2013-11-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and structure for adhesion of intermetallic compound (IMC) on Cu pillar bump |
CN101983818B (zh) * | 2010-11-11 | 2012-10-03 | 西安北方捷瑞光电科技有限公司 | 一种直径1mm以下镍铬丝的焊接方法 |
CN102184905A (zh) * | 2011-04-26 | 2011-09-14 | 哈尔滨工业大学 | 单金属间化合物微互连焊点结构 |
US8574722B2 (en) * | 2011-05-09 | 2013-11-05 | Tyco Electronics Corporation | Corrosion resistant electrical conductor |
US9224550B2 (en) | 2012-12-26 | 2015-12-29 | Tyco Electronics Corporation | Corrosion resistant barrier formed by vapor phase tin reflow |
JP6236915B2 (ja) * | 2013-06-25 | 2017-11-29 | 富士電機株式会社 | はんだ付け方法および半導体装置の製造方法 |
GB2522406A (en) * | 2014-01-13 | 2015-07-29 | Seren Photonics Ltd | Semiconductor devices and fabrication methods |
CN104651898B (zh) * | 2015-02-09 | 2018-01-16 | 大连理工大学 | 一种金属间化合物薄膜的制备方法 |
CN104862701B (zh) * | 2015-05-11 | 2017-03-29 | 哈尔滨工业大学 | 一种采用多层微米、亚微米薄膜快速制备可高温服役全imc微焊点的方法 |
DE102015122259B4 (de) * | 2015-12-18 | 2020-12-24 | Infineon Technologies Austria Ag | Halbleitervorrichtungen mit einer porösen Isolationsschicht |
KR20190085590A (ko) * | 2018-01-11 | 2019-07-19 | 삼성전자주식회사 | 반도체 장치, 이를 포함하는 반도체 패키지 및 이의 제조 방법 |
US11646286B2 (en) | 2019-12-18 | 2023-05-09 | Micron Technology, Inc. | Processes for forming self-healing solder joints and repair of same, related solder joints, and microelectronic components, assemblies and electronic systems incorporating such solder joints |
CN111627870A (zh) * | 2020-05-28 | 2020-09-04 | 通富微电子股份有限公司技术研发分公司 | 一种半导体封装器件 |
CN112928099B (zh) * | 2021-02-09 | 2024-02-02 | 上海航天电子通讯设备研究所 | 一种基于铝硅合金的bga互连载体及其制备方法 |
WO2023070551A1 (zh) * | 2021-10-29 | 2023-05-04 | 京东方科技集团股份有限公司 | 发光器件、发光模组及其制备方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4679311A (en) * | 1985-12-12 | 1987-07-14 | Allied Corporation | Method of fabricating self-aligned field-effect transistor having t-shaped gate electrode, sub-micron gate length and variable drain to gate spacing |
US5179041A (en) * | 1989-06-16 | 1993-01-12 | Sumitomo Electric Industries, Ltd. | Method for manufacturing an electrode structure for III-V compound semiconductor element |
US5281684A (en) * | 1992-04-30 | 1994-01-25 | Motorola, Inc. | Solder bumping of integrated circuit die |
GB2292015B (en) * | 1994-07-29 | 1998-07-22 | Plessey Semiconductors Ltd | Trimmable inductor structure |
US5525204A (en) * | 1994-09-29 | 1996-06-11 | Motorola, Inc. | Method for fabricating a printed circuit for DCA semiconductor chips |
JP3138159B2 (ja) * | 1994-11-22 | 2001-02-26 | シャープ株式会社 | 半導体装置、半導体装置実装体、及び半導体装置の交換方法 |
US5849170A (en) * | 1995-06-19 | 1998-12-15 | Djokic; Stojan | Electroless/electrolytic methods for the preparation of metallized ceramic substrates |
US5936848A (en) * | 1995-12-20 | 1999-08-10 | Intel Corporation | Electronics package that has a substrate with an array of hollow vias and solder balls that are eccentrically located on the vias |
US5730853A (en) * | 1996-04-25 | 1998-03-24 | Northrop Grumman Corporation | Method for plating metal matrix composite materials with nickel and gold |
US5670418A (en) * | 1996-12-17 | 1997-09-23 | International Business Machines Corporation | Method of joining an electrical contact element to a substrate |
JP3070514B2 (ja) * | 1997-04-28 | 2000-07-31 | 日本電気株式会社 | 突起電極を有する半導体装置、半導体装置の実装方法およびその実装構造 |
-
1999
- 1999-08-02 US US09/365,683 patent/US6130479A/en not_active Expired - Lifetime
-
2000
- 2000-06-29 TW TW089112858A patent/TW461067B/zh not_active IP Right Cessation
- 2000-07-21 SG SG200004102A patent/SG91877A1/en unknown
- 2000-08-01 CN CNB001217879A patent/CN1137797C/zh not_active Expired - Lifetime
- 2000-08-18 US US09/641,413 patent/US6444562B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6130479A (en) | 2000-10-10 |
US6444562B1 (en) | 2002-09-03 |
CN1282645A (zh) | 2001-02-07 |
SG91877A1 (en) | 2002-10-15 |
TW461067B (en) | 2001-10-21 |
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