TW473562B - Method of making a product with improved material properties by moderate heat treatment of a metal incorporating a dilute additive - Google Patents

Method of making a product with improved material properties by moderate heat treatment of a metal incorporating a dilute additive Download PDF

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Publication number
TW473562B
TW473562B TW087120343A TW87120343A TW473562B TW 473562 B TW473562 B TW 473562B TW 087120343 A TW087120343 A TW 087120343A TW 87120343 A TW87120343 A TW 87120343A TW 473562 B TW473562 B TW 473562B
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Taiwan
Prior art keywords
coating
deposit
heat treatment
scope
patent application
Prior art date
Application number
TW087120343A
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English (en)
Chinese (zh)
Inventor
Jimmy Kuo-Wei Chen
Benjamin N Eldridge
Thomas H Dozier
Junjye J Yeh
Gayle J Herman
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Formfactor Inc
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Publication of TW473562B publication Critical patent/TW473562B/zh

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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0006—Interconnects
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    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
TW087120343A 1997-09-17 1998-12-08 Method of making a product with improved material properties by moderate heat treatment of a metal incorporating a dilute additive TW473562B (en)

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US7458816B1 (en) 2000-04-12 2008-12-02 Formfactor, Inc. Shaped spring
CN100339985C (zh) * 2000-04-12 2007-09-26 佛姆法克特股份有限公司 成形弹簧以及制造和使用成形弹簧的方法
EP1398831A3 (fr) * 2002-09-13 2008-02-20 Shipley Co. L.L.C. Formation d'espaces d'air
JP3745744B2 (ja) * 2003-04-16 2006-02-15 住友電気工業株式会社 金属構造体の製造方法およびその方法により製造した金属構造体
US7354354B2 (en) * 2004-12-17 2008-04-08 Integran Technologies Inc. Article comprising a fine-grained metallic material and a polymeric material
JP4762577B2 (ja) * 2005-03-11 2011-08-31 古河電気工業株式会社 ナノ構造体の製造方法
US7521128B2 (en) * 2006-05-18 2009-04-21 Xtalic Corporation Methods for the implementation of nanocrystalline and amorphous metals and alloys as coatings
US7782072B2 (en) * 2006-09-27 2010-08-24 Formfactor, Inc. Single support structure probe group with staggered mounting pattern
KR101811089B1 (ko) * 2010-11-11 2017-12-20 히타치 긴조쿠 가부시키가이샤 알루미늄박의 제조방법
US9714729B2 (en) * 2011-11-30 2017-07-25 Corning Incorporated Complex structures in refractory bodies and methods of forming
JP5077479B1 (ja) * 2011-12-15 2012-11-21 オムロン株式会社 コンタクトおよびこれを用いた電子部品
JP6054258B2 (ja) * 2013-06-17 2016-12-27 名古屋メッキ工業株式会社 電子機器のろう付け接続部
FR3041147B1 (fr) 2015-09-14 2018-02-02 3Dis Tech Procede d'integration d'au moins une interconnexion 3d pour la fabrication de circuit integre
KR101748082B1 (ko) 2016-05-18 2017-06-16 세종대학교산학협력단 비정질 전구체를 이용한 나노결정립 형상기억합금 또는 비정질 합금을 포함하는 프로브 팁, 이를 포함하는 프로브 카드 및 이의 형상 회복 방법
US11015255B2 (en) * 2018-11-27 2021-05-25 Macdermid Enthone Inc. Selective plating of three dimensional surfaces to produce decorative and functional effects
CN113005490A (zh) * 2021-03-16 2021-06-22 昆明理工大学 一种通过热处理提高纳米晶镍腐蚀性能的方法
KR102409029B1 (ko) * 2022-04-12 2022-06-14 이시훈 프로브 핀

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CN1278308A (zh) 2000-12-27
EP1023469A1 (fr) 2000-08-02

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