AU7959298A - Method of making a structure with improved material properties by moderate heat treatment of a metal deposit - Google Patents

Method of making a structure with improved material properties by moderate heat treatment of a metal deposit

Info

Publication number
AU7959298A
AU7959298A AU79592/98A AU7959298A AU7959298A AU 7959298 A AU7959298 A AU 7959298A AU 79592/98 A AU79592/98 A AU 79592/98A AU 7959298 A AU7959298 A AU 7959298A AU 7959298 A AU7959298 A AU 7959298A
Authority
AU
Australia
Prior art keywords
making
heat treatment
material properties
moderate heat
metal deposit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU79592/98A
Other languages
English (en)
Inventor
Jimmy Kuo-Wei Chen
Thomas H Dozier
Benjamin N Eldridge
Gayle J. Herman
Igor Y. Khandros
Junjye J. Yeh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FormFactor Inc
Original Assignee
FormFactor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FormFactor Inc filed Critical FormFactor Inc
Publication of AU7959298A publication Critical patent/AU7959298A/en
Abandoned legal-status Critical Current

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Classifications

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0006—Interconnects
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    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Measuring Leads Or Probes (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
AU79592/98A 1997-09-17 1998-06-11 Method of making a structure with improved material properties by moderate heat treatment of a metal deposit Abandoned AU7959298A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US93192397A 1997-09-17 1997-09-17
US08931923 1997-09-17
PCT/US1998/012094 WO1999014404A1 (fr) 1997-09-17 1998-06-11 Procede d'obtention de structures aux proprietes mecaniques ameliorees par traitement thermique modere d'un depot metallique

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AU7959298A true AU7959298A (en) 1999-04-05

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JP (1) JP2001516812A (fr)
KR (1) KR20010024022A (fr)
CN (1) CN1278308A (fr)
AU (1) AU7959298A (fr)
TW (1) TW473562B (fr)
WO (1) WO1999014404A1 (fr)

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US7458816B1 (en) 2000-04-12 2008-12-02 Formfactor, Inc. Shaped spring
JP2003531495A (ja) * 2000-04-12 2003-10-21 フォームファクター，インコーポレイテッド 成形バネ及びその製造及び使用方法
US6640432B1 (en) 2000-04-12 2003-11-04 Formfactor, Inc. Method of fabricating shaped springs
EP1398831A3 (fr) 2002-09-13 2008-02-20 Shipley Co. L.L.C. Formation d'espaces d'air
JP3745744B2 (ja) * 2003-04-16 2006-02-15 住友電気工業株式会社 金属構造体の製造方法およびその方法により製造した金属構造体
US7354354B2 (en) * 2004-12-17 2008-04-08 Integran Technologies Inc. Article comprising a fine-grained metallic material and a polymeric material
JP4762577B2 (ja) * 2005-03-11 2011-08-31 古河電気工業株式会社 ナノ構造体の製造方法
US7521128B2 (en) * 2006-05-18 2009-04-21 Xtalic Corporation Methods for the implementation of nanocrystalline and amorphous metals and alloys as coatings
US7782072B2 (en) * 2006-09-27 2010-08-24 Formfactor, Inc. Single support structure probe group with staggered mounting pattern
KR101811089B1 (ko) 2010-11-11 2017-12-20 히타치 긴조쿠 가부시키가이샤 알루미늄박의 제조방법
CN104185504B (zh) * 2011-11-30 2016-05-25 康宁股份有限公司 耐火体中的复杂结构及其形成方法
JP5077479B1 (ja) * 2011-12-15 2012-11-21 オムロン株式会社 コンタクトおよびこれを用いた電子部品
JP6054258B2 (ja) * 2013-06-17 2016-12-27 名古屋メッキ工業株式会社 電子機器のろう付け接続部
FR3041147B1 (fr) 2015-09-14 2018-02-02 3Dis Tech Procede d'integration d'au moins une interconnexion 3d pour la fabrication de circuit integre
KR101748082B1 (ko) 2016-05-18 2017-06-16 세종대학교산학협력단 비정질 전구체를 이용한 나노결정립 형상기억합금 또는 비정질 합금을 포함하는 프로브 팁, 이를 포함하는 프로브 카드 및 이의 형상 회복 방법
US11015255B2 (en) * 2018-11-27 2021-05-25 Macdermid Enthone Inc. Selective plating of three dimensional surfaces to produce decorative and functional effects
CN113005490A (zh) * 2021-03-16 2021-06-22 昆明理工大学 一种通过热处理提高纳米晶镍腐蚀性能的方法
KR102409029B1 (ko) * 2022-04-12 2022-06-14 이시훈 프로브 핀

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JPH02221377A (ja) * 1989-02-22 1990-09-04 Toyota Motor Corp Ｔｉ合金製コイルバネ
JP2002509639A (ja) * 1994-11-15 2002-03-26 フォームファクター，インコーポレイテッド 超小型電子素子の相互接続要素

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EP1023469A1 (fr) 2000-08-02
JP2001516812A (ja) 2001-10-02
WO1999014404A1 (fr) 1999-03-25
CN1278308A (zh) 2000-12-27
KR20010024022A (ko) 2001-03-26
TW473562B (en) 2002-01-21

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