TW473562B - Method of making a product with improved material properties by moderate heat treatment of a metal incorporating a dilute additive - Google Patents

Method of making a product with improved material properties by moderate heat treatment of a metal incorporating a dilute additive Download PDF

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Publication number
TW473562B
TW473562B TW087120343A TW87120343A TW473562B TW 473562 B TW473562 B TW 473562B TW 087120343 A TW087120343 A TW 087120343A TW 87120343 A TW87120343 A TW 87120343A TW 473562 B TW473562 B TW 473562B
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TW
Taiwan
Prior art keywords
coating
deposit
heat treatment
scope
patent application
Prior art date
Application number
TW087120343A
Other languages
Chinese (zh)
Inventor
Jimmy Kuo-Wei Chen
Benjamin N Eldridge
Thomas H Dozier
Junjye J Yeh
Gayle J Herman
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Formfactor Inc
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Publication of TW473562B publication Critical patent/TW473562B/en

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    • HELECTRICITY
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0006Interconnects
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    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60Electroplating characterised by the structure or texture of the layers
    • C25D5/615Microstructure of the layers, e.g. mixed structure
    • C25D5/617Crystalline layers
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/30107Inductance

Abstract

Deposition of metal in a preferred shape, including coatings (206) on parts (204), or stand-alone materials (300), and subsequent heat treatment (106) to provide improved mechanical properties. In particular, the method gives products with relatively high yield strength. The products often have relatively high elastic modulus, and are thermally stable, maintaining the high yield strength at temperatures considerably above 25 DEG C. this technique involves depositing a material (206) in the presence of a selected additive, and then subjecting the deposited material to a moderate heat treatment (106). This moderate heat treatment differs from other commonly employed ""stress relief"" heat treatments in using lower temperatures and/or shorter times preferably just enough to reorganize the material to the new, desired form. For example, coating and heat treating a spring-shaped elongate member provides a resilient, conductive contact (212, 920, 1060) useful for electronic applications.

Description

本專利申4案爲在1997年9月17日提出申請之共待審美國 專矛丨申明案序號⑽/幻丨,%3之部份連續案。此申請案亦爲在 1995年5月26EI提出申請之共待審美國專利申請案序號 08/452,255之部份連續案。 Π.發明背t 1. 技術農 本發明係關於將一種材料沉積成所選定之形狀,然後改 ^此最初材料,以提供所要之機械性質。將以非晶質結構 /几積之適虽材料在中度條件加熱,獲得在應力下具有較高 回彈I·生彈性模數及溫度安定性之較有序結構。特定言之 ,可私一種成形材料或多種形式,以此新材料塗覆並經熱 處理,而得成e、硬化塗層,特別是呈導電性彈簧形式。 2. 趣_闕技藝之描祕 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 訂 塗敷塗層以賦予所要機械性質之概念,係使用於許多領 域中’從半導體到汽車。例如,微電機結構、微電子封裝 及磁性儲存介質,均採用此種塗層。從濺射至電成形至化 學蒸氣沉積之多種方法’係被廣泛地用以製造此種塗層。 但是,許多此等塗層之機械性質並不完全安定,尤其是在 高溫下。這對於會造成非平衡結構之沉積方法而言,'格外 眞實。因此,具有此等塗層之配件,於應用上有—項基本 問題’其在負載下,特別是在高溫下,需要安定機械性質 〇 將材料在顯著提高溫度下回火或加熱一段長時間,通常 473562 A7 B7 五、發明説明(2 .In = I · 經濟部中央標準局員工消費合作社印製 被認爲是錢更多結構達成平衡之—財式。回火經常用 以減輕脆性。脆性經常由於不同材料形成程序所造成,例 如在形成導線時,一般係將材料經過孔模壓出,立涉及各 種壓縮與變形程序。剛壓出之導線具有所要之形狀,但此 材料微觀結構之檢視,顯示大量内部應力作爲㈣應力場 。若此等内部應力場很高,則此材料可能被認爲是易碎的 ,且將在中度外加應力下破碎。熱處理此種導線將允許此 材料重組並緩和此等内部應力場。 熱處理亦用以使系統内之諸成份再分佈。例如,一般係 在半導體加工處理中,於矽基材表面上施加摻雜劑,孽如 硼或磷。加熱或回火此產物,則當摻雜劑原子在基質材料 内擴散時’會允許在⑦結構内之摻雜劑原子再分佈。 金屬塗層譬如鎳(Ni)之回火,#常用於許多艘敷操作中 :電鍍鎳在基材上,然後在例如就下回火—至兩小時, 是十分常見的。這通常會解除基本上所有在塗層中之應力 ,因此回火係持續相對較長時間及/或在相對較高溫度下 :f傳統應財’鎳係相對較迅速地鍍敷,其係獲得相對 較無序之最初結構,其因而提供許多殘留應力場之來源。 回火允許材料達成平衡結構,其係較爲安定。 、應指出的是,典型回火熱處理係涉及時間與溫度,且熟 胬此藝者可平衡使用較高溫度對較短時間,或反之。 另一種傳統方法是製備供硬碟或其他記錄表面用之薄膜 。將譬如NiP材料之薄膜沉積在基材上,然後回 硬材科。 -5- 娜尺度適用中國國家標A4規格(210χ?^ J------;--1樣衣-- (請先閱讀背面之注意事項再填寫本頁) 、1Τ 473562 五、發明説明(3 由於半導體技術進步及在晶片上之裝置密度增加,故辦 加I要求係被寄托在微電子封裝與微電子診斷中之+互連 =亡。此種互連體之機械性質,在達成可信賴封裝:診斷 解決辦法上,是很重要的。 例如’典型上期望此種互連體具有斜回彈性。目前, 在微%子封裝上(常用技術,顯示極少或無回彈性。血刑 I線黏結 '膠帶自動化黏結σΑβ)、焊料塊技術: 針銷在孔洞中軟焊、針銷硬焊及表面裝載軟焊。雖炊使用 於微電子診斷學中之"彈簧單高驕„針銷,係經設計以具有 回=性機械結構,但其實質電感會抑制藉由診斷系統 向頻信號。 可使用於微電子工業之其他回彈性結構,包括一種被稱 爲微電子機械結構或MEMS之結構。許多研究人員已製造 出一些小結構,譬如與其他電子組件—起定位之水平 被=造譬如繼電器之裝置。多種齒輪及其他機械結構已 經濟部中央標隼局員工消費合作社印製 衣— (請先閲讀背面之注意事項再填寫本頁) 訂 在:::之前,已感知有需要形成強而回彈性之微觀結 ^但>又有技術允許達成之。自回彈性材料直接形成微觀 it 一般而言若非不可能亦十分困難,此係由於回彈性 二:抵抗特定成形方法。例如,在習用探測插件中之鎢 :可在約90。角下彎肖,定位,然後切割成某一長度 精巧<成形是極端困難的。 无 微在米=之前,不可能將塗層鍍敷於小的(數十至數百 未)或甚至大的(毫米、厘米或較大)最小特徵尺寸之基 經濟部中央檩準局員工消費合作社印製 473562 A7 _____ B7 五、發明説明(4 ) 材上以提供回彈性特徵,特別是在想要具有良好降服強度 結構之情況中。在欲將裝置使用於溫度超過1〇〇〇C、85°c或 甚至50°C之中度高溫下時,此項限制是特別麻煩的。習用 塗層不能用以產生耐久、強彈簧結構,此係由於所形成經 塗覆產物之熱不安定性所致。缺乏具有可使用機械性質之 結構’使其極端難以建立具有大數目小彈簧之裝置,譬如 探測插件之裝置。 在可形成微觀結構之早期研究工作中,顯示柔軟材料譬 如金可容易地成形,然後經鍍敷而得硬塗層與回彈性結構 。參閱1995年12月19日頒予之美國專利5 476 211,歸屬於 FormFactor公司,其標題爲"使用犧牲性構件製造電接點之 方法"。導致本發明之研究工作,顯示使用經改良之材料 ,及接著熱處理,可提供強 '回彈性最後產物。使用此等 相同或類似材料,以及適當熱處理,可在極多種應用上提 供回彈性結構。 鍵敷技術係爲一般所習知。參閲,例如美國專利 4,439,284,"電沉積鎳-鈷合金之組成控制”。但是,於本文中 所揭示之鍍敷材料與熱處理條件之選擇,未曾在過去、在 '284專利中或它處揭示過。 、熟諳此藝者將明瞭其中具有高降服強度之材料將爲有利 之其他應用。這對於具有任意且可能是複雜形狀之基質材 料,其中保持該形狀是很重要的,或其中基質材料未具有 足夠高降服強度而言,特別是眞實的。特定言之,當製造 具有相當幾何形狀與尺度之各種彈簧結構時,於彈性模= 度適用中國國家操準(CNS ) A4規格(21GX297公餐)" -~~ (請先閱讀背面之注意事項再填寫本頁) 訂 473562 A7 B7 五、發明説明(5 ) 上之增加,將會成比例地增加彈力値。對微細間距互連體 而言,在固定體積中達成較大彈力値是有利的。 III.發明摘述 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 此新發明係解決較早期材料在負載下,特別是在高溫下 ,不會提供安定機械性質之傳統問題。此一般技術允許製 造配件上之塗層或孤立塗層,其具有經改良之機械性質, 甚至是在高操作溫度下亦然。特定言之,此方法係使產物 具有相對較高降服強度,相對較高彈性模數及經改良之溫 度安定性,意即在高溫負載下對變形之抵抗性。此項技術 涉及以選定狀態沉積塗層,然後使此塗層接受中度熱處理 。此中度熱處理與其他一般採用之"應力緩和"熱處理不同 之處在於使用顯著較低溫度及/或時間之組合。傳統回火 熱處理係使材料溫熱至某一溫度及歷經一段時間,以在後 續冷卻之後,解除基本上所有應力。此項新技術係使剛塗 覆之材料接受較中等溫度及/或較短時間,較佳係剛好足 夠使材料重組成新的所要形式。機械性質係在處理後改良 。降服應力實際上在此新穎熱處理之後增加,然而降服應 力一般係在典型應力缓和熱處理後降低。一般性地參閲 R.J. Walter,嫂敷與表面處理(Hating & Surface Finishing), 1986 年 10 月,第 48-53 頁;A.J. Dill,鍍敷(Plating), 1974 年 11 月,第 1001-1004 頁;及 A.W. Thompson 與 H.J. Saxton,冶金學會報(Metallurgical Transactions)第 4 卷,1973 年 6 月,第 1599-1605 頁。 許多材料適合與此新穎技術一起使用,但一種特佳系統 包括鎳或鍊/姑合金,並使用少量含硫添加劑,譬如糖精 _-8- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) ^/i562 A7 ------- B7 五、發明説明(6 ) 。將此材料電鍍於基材上,然後在中度條件下熱處理。 種較佳沉積方法爲電鍍,但其他可使用之沉積方法包 括金屬之化學蒸氣沉積(CVD)、物理蒸氣沉積、電解 或無電水溶液鍍敷,及任何會造成材料經過氣體' 液體或 固體先質之分解或反應而沉積之方法。 此種製造具有安足機械性質塗層之新技術,有助於製造 回彈性結構,其係爲在譬如微電子互連體之許多應用上之 重要結構。除了安定機械性質以外,許多新穎塗層係提供 具有鬲導電性之結構。因此,利用本發明可製造低電感、 回彈性互連體。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 在一項特佳具體實施例中,係將塗層塗敷至導線或絲帶 ,以製造MicroSpringTM接點,譬如在美國專利5 476 211中所 述者,其標题爲"使用犧牲性構件製造電接點之方法"。此 项技術已被發展在與此種彈簧接點有關聯之研究工作上, 特別是以大約1-2密爾(25-50微米)之塗層,塗覆大約ι_2密爾 (約25-50微米)厚之導線。一般而言,此項技術可使用於 200埃或較厚之薄膜塗層,及具有毫米或甚至厘米尺寸厚 膜之塗層。熟讀此藝者將明瞭本發明之陳述内容可適用於 極多種結構。 在另一項特佳具體實施例中,係將塗層材料沉積在一種 成形物上,以組成有用之接點或其他具有經改良材料性質 之結構。一種較佳結構爲圖3B、3C之石印彈簧。其他特佳 結構爲在圖9C與10K中舉例之石印彈簧。 可使用其他沉積方法。特定言之,濺射可用以在成形物 -a- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 473562 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明(7 上製備最初成形之沉積物,然後熱處理該最初成形之沉浐 物,而得經熱處理之成形沉積物。 用以支撑藉由此等沉積方法所得沉積物之"成形物",可 採取多種料,包括:細長構件,譬如導線或晶種層軌跡 ^呈細長型態;被界定在適當可移除材料上之壕溝y此種 壕溝視情況包括一種材料,譬如可鍍敷晶種層;在可移除 材料中或其上之其他成形物;及此種成形物視情況包括二 種材料,譬如可鍍敷晶種層。一種較佳成形物爲導線骨架 另種較佳成形物爲被界定在遮蔽材料中之結構,具有 -個晶種層在該結構中。另一種較佳成形物爲被已構圖之 晶種層所界定之結構,位在遮蔽材料上方,其中覆蓋在遮 蔽材料外形之經#圖晶種層之形狀,會影嚮第一種材料 ,沉積之處。又另一種較佳成形物爲單獨之具有外形之遮 蔽材料,於其中根據譬如模板或罩蓋中開孔之圖樣,沉 第一種材料。 雖然稀添加劑之加入可使用於一些列舉之具體實施例中 ,但沉積物之重要特徵是被沉積金屬之晶粒帛構特性。本 揭示〇係陳述以非晶質形式沉積金屬,然後熱處理以形成 王要晶體結構。使用正確條件,如在本揭示文中所陳述者 ,所形成之產物比最初沉積物具有更良好材料性質。 、根據一項較佳實施例,—種回彈性結構係以下述方式製 成心仏細長構件,在細長構件上沉積塗層,而得經塗覆 γ 長構件,及在時間與溫度之組合下,熱處理該經塗覆 之細長構件,獲得具有經改良材料性質之塗層。此塗層包 (210X297公釐) (請先閲讀背面之注意事項再填寫本頁) 衣-This patent application No. 4 is a part of the pending US patent application filed on September 17, 1997. The serial number of the declaration case is ⑽ / magic,% 3. This application is also part of a series of co-pending US patent applications with serial numbers 08 / 452,255 filed on May 26, 1995. Π. Invention Back 1. Technical Agriculture The present invention is about depositing a material into a selected shape and then modifying the original material to provide the desired mechanical properties. By heating the material with an amorphous structure and a suitable product under moderate conditions, a more ordered structure with higher rebound I · elastic modulus and temperature stability under stress is obtained. In particular, a single forming material or multiple forms can be used, and the new material can be coated and heat-treated to obtain an e, hardened coating, especially in the form of a conductive spring. 2. Fun _ The description of the skill printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page). The concept of applying a coating to impart the desired mechanical properties is used in many fields Medium 'from semiconductor to automobile. For example, micro-motor structures, microelectronic packages, and magnetic storage media all use this coating. Various methods' from sputtering to electroforming to chemical vapor deposition are widely used to make such coatings. However, the mechanical properties of many of these coatings are not completely stable, especially at high temperatures. This is 'extremely solid' for deposition methods that cause unbalanced structures. Therefore, the accessories with these coatings have one basic problem in their application. They require stable mechanical properties under load, especially at high temperatures. Tempering or heating the material at a significantly elevated temperature for a long time, Usually 473562 A7 B7 V. Description of the invention (2.In = I · Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs is considered to be a balance of money and more structure-financial. Tempering is often used to reduce brittleness. Brittleness is often Due to the different material forming procedures, for example, when forming a wire, the material is generally extruded through a hole die, which involves various compression and deformation procedures. The newly extruded wire has the desired shape, but the inspection and display of the microstructure of the material shows A large amount of internal stress is used as the stress field. If these internal stress fields are high, the material may be considered fragile and will break under moderately applied stress. Heat treatment of such wires will allow the material to reorganize and relax. These internal stress fields. Heat treatment is also used to redistribute the components in the system. For example, it is generally used in semiconductor processing and silicon-based Dopants are applied on the surface of the material, such as boron or phosphorus. Heating or tempering this product, when the dopant atoms diffuse in the matrix material, will allow redistribution of dopant atoms in the plutonium structure. Metal coating Tempering of layers such as nickel (Ni), # are commonly used in many boat coating operations: it is very common to plate nickel on a substrate and then temper it for example to two hours. This usually releases almost all The stress in the coating, so the tempering system lasts for a relatively long time and / or at a relatively high temperature: f The traditional financial 'nickel system is plated relatively quickly, which obtains a relatively disordered initial structure It therefore provides many sources of residual stress fields. Tempering allows materials to reach a balanced structure, which is relatively stable. It should be noted that typical tempering heat treatment involves time and temperature, and those skilled in the art can use it in a balanced manner. Higher temperature for shorter time, or vice versa. Another traditional method is to prepare a film for hard disks or other recording surfaces. A film such as NiP material is deposited on a substrate and then returned to the Hard Materials Division. -5- Na Scale applicable to China House standard A4 specification (210χ? ^ J ------;-1 sample clothing-(Please read the precautions on the back before filling out this page), 1T 473562 V. Description of the invention (3 Due to advances in semiconductor technology and The density of devices on the chip has increased, so the requirement of adding I is entrusted to + interconnection = dead in microelectronic packaging and microelectronic diagnostics. The mechanical properties of such interconnects are achieving reliable packaging: diagnostic solutions It is very important. For example, 'Typically this type of interconnect is expected to have oblique resilience. At present, on micro-% subpackages (common technology, showing little or no resilience. Bloodline I-line adhesion' tape automated adhesion σΑβ), solder block technology: Pin pins are soldered in holes, pin pins are brazed, and surface soldering is used. Although used in microelectronic diagnostics, " Spring single high pin pins are designed to have The mechanical structure is reversible, but its substantial inductance will suppress the frequency signal through the diagnostic system. Other resilient structures that can be used in the microelectronics industry include a structure called a microelectromechanical structure or a MEMS. Many researchers have created small structures, such as those that are positioned at the same level as other electronic components, to make devices such as relays. A variety of gears and other mechanical structures have been printed on clothing by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs— (Please read the precautions on the back before filling out this page) Microstructures ^ but > technology allows it. The self-resilient material directly forms the microscopic it. It is generally very difficult, if not impossible, because of the resilience. Two: Resistance to specific forming methods. For example, tungsten in conventional probe inserts can be around 90. The corners are bent, positioned, and then cut to a certain length. Exquisite < forming is extremely difficult. It is impossible to plate the coating on small (tens to hundreds of) or even large (millimeters, centimeters or larger) minimum feature sizes before the meter is consumed by employees Cooperative printed 473562 A7 _____ B7 V. Description of the invention (4) Material to provide resilience characteristics, especially in the case of structures with good strength reduction. This limitation is particularly troublesome when the device is intended to be used at moderately high temperatures in excess of 1000C, 85 ° C, or even 50 ° C. Conventional coatings cannot be used to create durable, strong spring structures due to the thermal instability of the coated products formed. The lack of a structure with usable mechanical properties makes it extremely difficult to build a device with a large number of small springs, such as a device for detecting inserts. In the early research work that can form microstructures, it was shown that soft materials such as gold can be easily formed and then plated to obtain hard coatings and resilient structures. See U.S. Patent No. 5,476,211, issued December 19, 1995, which belongs to FormFactor Corporation and is entitled " Method of Manufacturing Electrical Contacts Using Sacrificial Components ". The research work leading to the present invention has shown that the use of improved materials and subsequent heat treatment can provide a strong 'resilient end product. The use of these same or similar materials and proper heat treatment can provide resilient structures in a wide variety of applications. Bonding techniques are generally known. See, for example, U.S. Patent 4,439,284, " Composition Control of Electrodeposited Nickel-Cobalt Alloys. &Quot; However, the choice of plating materials and heat treatment conditions disclosed herein has not been in the past, in the '284 patent, or elsewhere Revealed. Skilled artisans will understand other applications where materials with high drop strength will be beneficial. This is for matrix materials with arbitrary and possibly complex shapes, where maintaining the shape is important, or where matrix materials In terms of not having a sufficiently high yield strength, it is particularly solid. In particular, when manufacturing various spring structures with considerable geometric shapes and dimensions, the Chinese National Standards (CNS) A4 specification (21GX297 Meal) "-~~ (Please read the notes on the back before filling this page) Order 473562 A7 B7 V. The increase in the description of the invention (5) will increase the elasticity proportionally. For fine-pitch interconnects It is advantageous to achieve a large elasticity in a fixed volume. III. Summary of Invention Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the note on the back first) Please fill in this page again) This new invention solves the traditional problem of earlier materials under load, especially at high temperature, which does not provide stable mechanical properties. This general technology allows the manufacture of coatings or isolated coatings on parts, which It has improved mechanical properties, even at high operating temperatures. In particular, this method allows the product to have a relatively high yield strength, a relatively high elastic modulus, and improved temperature stability, which means that Resistance to deformation under high temperature loads. This technique involves depositing a coating in a selected state and then subjecting the coating to a moderate heat treatment. This moderate heat treatment differs from other commonly used " stress relaxation " heat treatments in that Use a combination of significantly lower temperatures and / or times. Traditional tempering heat treatments allow the material to warm to a certain temperature and over a period of time to relieve essentially all stress after subsequent cooling. This new technology makes it just coated Covered materials accept relatively moderate temperatures and / or shorter times, preferably just enough to reconstitute the material into the new desired form. Mechanical properties are in place Improved after treatment. The yielding stress actually increases after this novel heat treatment, but the yielding stress generally decreases after typical stress relaxation heat treatment. See RJ Walter, Hating & Surface Finishing, 1986 for a general description. October, pages 48-53; AJ Dill, Plating, November 1974, pages 1001-1004; and AW Thompson and HJ Saxton, Journal of the Metallurgical Society (Metallurgical Transactions) Volume 4, 1973 June, pp. 1599-1605. Many materials are suitable for use with this novel technology, but a particularly good system includes nickel or chain / alloys, and uses a small amount of sulfur-containing additives, such as saccharin_-8- This paper size applies to China National Standard (CNS) A4 specifications (210X 297 mm) ^ / i562 A7 ------- B7 V. Description of the invention (6). This material is plated on a substrate and then heat treated under moderate conditions. A preferred deposition method is electroplating, but other deposition methods that can be used include chemical vapor deposition (CVD) of metals, physical vapor deposition, electrolytic or electroless aqueous plating, and any material that will cause the material to pass through a gas' liquid or solid precursor. A method of deposition by decomposition or reaction. This new technology for manufacturing coatings with sufficient mechanical properties helps to make resilient structures, which are important structures for many applications such as microelectronic interconnects. In addition to stable mechanical properties, many novel coatings provide structures with rhenium conductivity. Therefore, the present invention can be used to manufacture low-inductance and resilient interconnects. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the notes on the back before filling this page) In a particularly preferred embodiment, the coating is applied to a wire or ribbon to make MicroSpringTM contacts, For example, as described in U.S. Patent No. 5,476,211, the title is " Method of Making Electrical Contacts Using Sacrificial Components ". This technology has been developed in research related to this type of spring contact, especially with a coating of about 1-2 mils (25-50 microns), coating about ι-2 mils (about 25-50 Micron) thick wire. Generally speaking, this technology can be used for thin film coatings of 200 angstroms or thicker, and coatings with thick films of millimeters or even centimeters. Those skilled in the art will appreciate that the teachings of the present invention are applicable to a wide variety of structures. In another particularly preferred embodiment, the coating material is deposited on a shaped article to form useful contacts or other structures with improved material properties. A preferred structure is the lithograph spring of Figures 3B and 3C. Other particularly preferred structures are the lithographic springs exemplified in Figs. 9C and 10K. Other deposition methods can be used. In particular, sputtering can be used to form the paper-a- This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 473562 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs An initially formed deposit is prepared, and then the initially formed sinker is heat-treated to obtain a heat-treated formed deposit. The " formed object " to support the deposit obtained by such a deposition method may take a variety of Materials, including: slender members, such as wires or seed layer tracks, which are slender; ditches defined on appropriate removable materials; such ditches optionally include a material, such as a plateable seed layer; in Other shaped articles in or on removable materials; and such shaped articles optionally include two materials, such as a plateable seed layer. One preferred shaped article is a wire frame and the other preferred shaped article is defined. The structure in the masking material has a seed layer in the structure. Another preferred shaped object is a structure defined by the patterned seed layer, located above the masking material, where The shape of the seed layer in the shape of the masking material will affect the first material, where it is deposited. Yet another preferred shaped object is a separate masking material with a shape, according to which, for example, a template or cover The pattern of mesoporosity is the first material. Although the addition of dilute additives can be used in some of the specific examples listed, an important feature of the deposit is the grain texture of the deposited metal. This disclosure is a statement The metal is deposited in an amorphous form and then heat treated to form the crystal structure. Using the correct conditions, as stated in this disclosure, the product formed has better material properties than the initial deposit. Example: A kind of resilient structure is made of a palatal slender member in the following manner, and a coating is deposited on the slender member to obtain a coated γ long member, and the coated heat treatment is performed under a combination of time and temperature The slender member is given a coating with improved material properties. This coating package (210X297 mm) (Please read the precautions on the back before filling this page) Clothing-

'II 五、發明説明(8 ) 含至少-種金屬與至少—種添加劑。 根據另一項較伟眚说/cl 製成,提供細長構件,在=回彈性結構係以下述方式 覆之細長構件,及在時間:件上沉積塗層,而得經塗 覆之细長構件 ’ 3 ’、'服又之組合下,熱處理該經塗 復(、'.田長構件,其會 王 少-種金屬與至少—種添含至 較佳添加劑包括糖精mm」醇金屬包括錄與姑,且 根據另一項較佳眚说办丨 製成,提供細長構件,在^播回彈性結構係以下述方式 :處= = :::,及在時間與溫度之组合下, ,而得安定塗層以在該亞穩塗層中引發轉變 加劑,此至少一稀沃層匕口至少一種金屬與至少一種添 根俨另一❹ 劑能夠與至少一種金屬共沉積。 製成,提件“::她:’―種回彈性結構係以下述方式 曰丨生姑拉 構牛,在細長構件上沉積塗層作爲毫微結 U虚而得經塗覆之細長構件,及在時間與溫度之組 結晶性㈣理通經塗覆之細長構件,以引發轉變而得包含 經濟部中夬檁準局員工消費合作社印製 :---- (請先閱讀背面之注意事項再填寫本頁}'II V. Description of the invention (8) Contains at least one metal and at least one additive. It is made according to another more advanced theory / cl, providing an elongated member, an elongated member covered with a resilient structure in the following manner, and a time: a coating is deposited on the member to obtain a coated elongated member Under the combination of '3' and 'service,' the heat-treated coated (, '. Tianchang member, which will be Wang Shao-a kind of metal and at least-a kind added to a better additive including saccharin mm "alcohol metal includes recording and In addition, it is made according to another preferred method to provide an elongated member. The elastic structure is broadcasted in the following manner: = = :::, and under the combination of time and temperature, The coating is stabilized to induce a transition additive in the metastable coating, and the at least one thin layer of the ferrous layer can co-deposit at least one metal and at least one root-adding agent with the at least one metal. ":: She: '-A kind of resilient structure is described in the following way: a snail is formed on the slender member, and a coating is deposited on the slender member as a nano-junction to obtain a coated slender member, and at A set of crystalline cavities coated with elongated members to induce transformation Ministry of Economic Affairs in the Bureau of prospective employees Jue purlin consumer cooperatives printed: ---- (Please read the Notes on the back page and then fill in}

-、1T 夠盘、、:塗層。此塗層包含至少-種金屬,及至少-種-夠與琢至少—種金屬共沉積之添加劑。 根t ’較佳具體實施例,一種回彈性結以下述形 ΐ細=細長構件,在細長構件上沉積塗層,而得經塗覆 細 件,及在時間與溫度之组合下熱處理該經塗覆之 件,其係增加該塗層之降服強度。此少 —種金屬與至少-種添加劑。 層 473562 經濟部中央標準局員工消費合作社印製 A7 B7五、發明説明(9 ) 根據另一項較佳實施例,一種具有經改良材料性質之結 構係以下述方式製成,提供基底配件,其包含可於其上沉 積第一種材料之成形物,在該成形物上沉積第一種材料, 而得最初成形之沉積物,及在時間與溫度之組合下熱處理 該最初成形之沉積物,而得經熱處理之成形沉積物,其具 有經改良之材料性質。該第一種材料包含至少一種金屬。 該成形物可採取如上述之多種形式。 根據另一項較佳實施例,一種結構係以下述方式製成, 提供基底配件,其包含可於其上沉積第一種材料之成形物 ,在該成形物上沉積第一種材料,而得最初成形之沉積物 ,及在時間與溫度之組合下,熱處理該最初成形之沉積物 ,而得經熱處理之成形沉積物,其具有經改良之材料性質 。該第一種材料包含至少一種金屬與至少一種添加劑。車交 佳金屬包括鎳與鉛,而較佳添加劑包括糖精與2- 丁炔-4-二 醇。該成形物可採取如上述之多種形式。 根據另一項較佳實施例,一種結構係以下述方式製成, 提供基底配件,其包含可於其上沉積第一種材料之成形物 ,在該成形物上沉積第一種材料,而得最初成形之沉積物 ,其係爲亞穩成形沉積物,及在時間與溫度之組合下,熱 處理該亞穩成形沉積物,以引發轉變而得經熱處理之成形 沉積物,其主要爲安定之成形沉積物,並具有所選定之材 料性質。該第一種材料包含至少一種金屬。該成形物可採 取如上述之多種形式。 根據另一項較佳實施例,一種結構係以下述方式製成, _-12-_ 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁) 473562 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明(ΊΟ 提供基底配件,其包含可於其上沉積第一種材料之成來物 ,在該成形物上沉積第一種材料,而得最初成形二 、心%物 ’其係爲毫微結晶性沉積物,及在時間與溫度之組人 熱處理該毫微結晶性沉積物,以引發轉變,而得麵熱處 之成形沉積物’其主要爲結晶性沉積物,並具有所選定之 材料性質。該第一種材料包含至少一種金屬。該成形^二 採取如上述之多種形式。 根據另一項較佳具體實施例,一種具有經改良材料性質 之產物係由下述形成,提供基底配件,其包含可於其上冗 積第一種材料之成形物,在該成形物上沉積第一種材料^ 而得最初成形之沉積物,及在時間與溫度之組合下,熱處 理該最初成形之沉積物,而得經熱處理之成形沉積物”,·'其 具有經改良之材料性質。第一種材料包含至少一種金屬。' 該成形物可採取如上述之多種形式。 在另:項較佳具體實施例中,一種結構具有接近關於此 種結構之最高降服強度,此結構包含細長構件及在該細長 構件上之塗層。此塗層係經處理而得具有所選定降服強度 ^回彈性結構,該降服強度大致上接近對該塗層組成之最 高降服強度。此塗層包含至少一種金屬。 在另一項較佳具體實施例中,一種結構具有接近關於此 種結構之最高降服強度,此結構包含細長構件及在該細長 構件上之塗層,此塗層係經處理而得具有主要包含晶體結 構之塗層之回彈性結構。此塗層包含至少—種金屬。 在另一項較佳具體實施例中,—種回彈性接點結構具有 (請先閱讀背面之注意事項再填寫本頁) 訂-, 1T enough disk, :: coating. The coating contains at least one metal, and at least one metal-additive sufficient to co-deposit with at least one metal. According to a preferred embodiment, a resilience knot is thin in the following form: an elongated member, and a coating is deposited on the elongated member to obtain a coated thin part, and the coated part is heat-treated under a combination of time and temperature. Covered parts increase the drop strength of the coating. The few metals and at least one additive. Layer 473562 Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (9) According to another preferred embodiment, a structure with improved material properties is made in the following manner, providing a base fitting, which Comprising forming a deposit on which the first material can be deposited, depositing the first material on the formation to obtain an initially formed deposit, and heat-treating the initially formed deposit under a combination of time and temperature, and A heat treated shaped deposit is obtained which has improved material properties. The first material contains at least one metal. The formed article may take various forms as described above. According to another preferred embodiment, a structure is made in the following manner, and a base fitting is provided, which includes a shaped article on which a first material can be deposited, and the first material is deposited on the shaped article, and The initially formed deposit, and the combination of time and temperature, is used to heat treat the initially formed deposit to obtain a heat treated formed deposit having improved material properties. The first material includes at least one metal and at least one additive. Good metals include nickel and lead, and preferred additives include saccharin and 2-butyne-4-diol. The formed article may take various forms as described above. According to another preferred embodiment, a structure is made in the following manner, and a base fitting is provided, which includes a shaped article on which a first material can be deposited, and the first material is deposited on the shaped article, and The first formed deposit is a metastable formed deposit, and the combination of time and temperature is used to heat treat the metastable formed deposit to induce transformation to obtain a heat treated formed deposit, which is mainly a stable formed Deposits with selected material properties. The first material contains at least one metal. The formed article can take various forms as described above. According to another preferred embodiment, a structure is made in the following way. _-12-_ This paper size applies to China National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling This page) 473562 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (ΊΟ Provides a base accessory that contains the product from which the first material can be deposited, and deposits the first on the formed product This material is initially shaped. It is a nanocrystalline deposit, and the nanocrystalline deposit is heat-treated at a time and temperature by a group of people to initiate a transformation. Shaped deposits' are mainly crystalline deposits and have selected material properties. The first material contains at least one metal. The shaped bodies take various forms as described above. According to another preferred embodiment A product with improved material properties is formed from the following, providing a base fitting that includes a molded article on which the first material can be accumulated, and depositing the first material on the molded article ^ To obtain the initially formed deposit, and to heat-treat the initially formed deposit under a combination of time and temperature to obtain a heat-treated formed deposit ", which has improved material properties. The first material Contains at least one metal. 'The shaped article can take a variety of forms as described above. In another preferred embodiment, a structure has a maximum yield strength close to that structure, and the structure includes an elongated member and an elongated member. A coating on a component. This coating is treated to have a selected yield strength and elastic resilience structure that is approximately close to the highest yield strength of the coating composition. This coating contains at least one metal. In a preferred embodiment, a structure has a maximum yield strength close to that structure. The structure includes an elongated member and a coating on the elongated member. The coating is processed to have a structure that mainly includes a crystal structure. The resilient structure of the coating. This coating contains at least one metal. In another preferred embodiment, a resilient contact Have (Please read the notes on the back of this page and then fill in) order

473562 A7 B7 五、發明説明(11 ) 關於此種結構之最高降服強度,此結構包含基底配件,具 有連接至此基底配件之物體。此物體依次包含第一種材料 ,其中第一種材料包含至少一種金屬,且其中該物體已經 處理而得經改良材料性質之物體。 在另一項較佳具體實施例中,一種結構,其具有主要爲 結晶性晶粒結構,其包含基底配件及連接至該基底配件之 物體。此物體包含第一種材料,且此第一種材料依次包含 至少一種金屬,及至少一種能夠與該至少一種金屬共沉積 之添加劑。此物體係經處理而得具有所選定降服強度之結 構,此降服強度大致上接近對該第一種材料組成呈物體形 式之最高降服強度。 本發明之此項及其他目的和優點,以及説明性具體實施 例之細節,將自下述專利説明書與附圖而更充分地瞭解。 IV.附圖簡述 圖1係説明根據本發明之較佳具體實施例製造經塗覆導 線方法'之流程圖。 圖2A係説明連接至基底之骨架之橫截面圖。 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 圖2B係説明剛塗覆導線之橫截面圖,其包含覆蓋該骨架 之未經熱處理之塗層。 圖2C係説明根據本發明較佳具體實施例之經熱處理之經 塗覆導線之橫截面圖,其包含覆蓋該骨架之經熱處理塗層 〇 圖3A係説明替代鍍敷基材之替代具體實施例之橫截面圖 ,此處彈簧接點構件係位在犧牲性基材上。 _-14-_ 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) 473562 A7 B7 經濟部中央標準局員工消費合作社印製 -15- 五、發明説明(12 圖3B係説明圖3A彈簧接點構件之透視圖,省略犧牲 材之顯示。 圖3C係説明彈簧接點構件之另—項 县體貫施例之橫截面 圖,其係被裝載至另一個組件。 圖4係説明經塗覆材料之示差掃描卡計度量法之圖表。 圖5A係説明得自剛塗覆Ni_Co塗層材料試樣之χ_射線繞射 圖樣之圖表。 圖5B係説明得自經熱處理Ni_Co塗層材料試樣之&射線繞 射圖樣之圖表。 圖6係説明剛塗覆導線與經熱處理導線之應力對應變數 據之圖表。 圖7係説明剛塗覆與經熱處理導線之彈性模數對糖精濃 度之圖表。 圖8係説明在熱處理前後,於不同時間與溫度下之導線 曲率之圖表。 圖9A爲製造彈簧接點構件技術之側面橫截面圖。 圖9B爲圖9A彈簧接點構件之側面橫截面圖。 圖9C爲圖9B彈簧接點構件之透視圖。 圖10A爲在接點結構製造方法之第一個列舉具體實施例 中之一個步骤之侧面橫截面圖。 圖10B爲在接點結構製造方法之第一個列舉具體實施例 中之另一個步驟之側面橫截面圖。 圖10C爲在根據接點結構製造方法之第—個列舉具體實 施例之圖10B所示步驟中所形成中間產物之頂部平面圖。 本紙張尺度適用中國國家標準(CNS ) A4規格(2丨0X297公餐) -----:--;---- (請先閱讀背面之注意事項再填寫本頁) 、vs 473562 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(13 ) 圖10D爲在接點結構製造方法之第一個列舉具體實施例 中之另一個步驟之側面橫截面圖。 圖10E爲在接點結構製造方法之第一個列舉具體實施例 中之另一個步驟之側面橫截面圖。 圖10F爲在根據接點結構製造方法之第一個列舉具體實施 例之圖10E所示步驟中所形成中間產物之頂部平面圖。 圖10G爲在接點結構製造方法之第一個列舉具體實施例 中之另一個步驟之側面橫截面圖。 圖10H爲在根據接點結構製造方法之第一個列舉具體實 施例之圖10G所示步驟中所形成產物之端部橫截面圖。 圖101與10J爲本發明接點結構之多種可能型態其中兩種 之透視圖,重要的是其似漏斗底端。圖101係説明部份塗覆 開孔側壁所形成之結構,大致上如圖10E與10G中所示。圖 10J顯示完全塗覆開孔側壁所形成之結構,如圖10E與10G 中所示。 圖10K爲在根據接點結構製造方法之第一個列舉具體實 施例之圖10G所示步驟中所形成中間產物之頂部平面圖。 圖10L與10M爲根據接點結構製造方法之第一個列舉具體 實施例,在電子组件上形成之已完成接點結構之個別側面 橫截面與透視圖。 圖10N爲圖10L與10M接點結構之側面橫截面圖,其頂端 係與電子組件之接點墊片接觸。 圖100爲圖10L與10M接點結構之J則面橫截面圖,其頂端 係焊接至電子組件之接點墊片。 _-16- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) .衣.473562 A7 B7 V. Description of the invention (11) Regarding the highest yield strength of this structure, the structure includes a base fitting and an object connected to the base fitting. This object in turn contains a first material, wherein the first material contains at least one metal, and wherein the object has been processed to obtain an object with improved material properties. In another preferred embodiment, a structure having a mainly crystalline grain structure includes a base fitting and an object connected to the base fitting. The object includes a first material, and the first material in turn includes at least one metal and at least one additive capable of being co-deposited with the at least one metal. This material system is processed to obtain a structure with a selected yield strength, which is approximately close to the highest yield strength in the form of an object for the first material composition. This and other objects and advantages of the present invention, as well as details of illustrative specific embodiments, will be more fully understood from the following patent specification and drawings. IV. Brief Description of the Drawings Fig. 1 is a flowchart illustrating a method of manufacturing a coated wire according to a preferred embodiment of the present invention. FIG. 2A is a cross-sectional view illustrating a skeleton connected to a substrate. Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page). Figure 2B is a cross-sectional view of the newly coated wire, which includes an unheated coating covering the skeleton. FIG. 2C is a cross-sectional view illustrating a heat-treated coated wire according to a preferred embodiment of the present invention, which includes a heat-treated coating covering the skeleton. FIG. 3A illustrates an alternative specific embodiment replacing a plated substrate. A cross-sectional view where the spring contact member is positioned on a sacrificial substrate. _-14-_ This paper size applies to China National Standard (CNS) A4 (210X 297 mm) 473562 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs -15- 5. Description of the invention (12 Figure 3B is an explanatory diagram 3A perspective view of spring contact member, omitting the display of sacrificial material. Figure 3C is a cross-sectional view illustrating another example of a spring contact member, which is loaded into another component. Figure 4 is a description Diagram of the differential scanning card meter measurement method of the coated material. Figure 5A is a diagram illustrating the χ_ray diffraction pattern obtained from a sample of the Ni_Co coating material just coated. Figure 5B is a diagram illustrating the heat treatment of the Ni_Co coating. A graph of & ray diffraction patterns of material samples. Figure 6 is a graph illustrating stress versus strain data for freshly coated and heat treated wires. Figure 7 is a graph illustrating the elastic modulus of freshly coated and heat treated wires versus saccharin. Concentration graph. Figure 8 is a graph illustrating the curvature of the wire at different times and temperatures before and after heat treatment. Figure 9A is a side cross-sectional view of the technology for manufacturing spring contact members. Figure 9B is a side view of the spring contact member of Figure 9A Sectional view. Fig. 9C is a perspective view of the spring contact member of Fig. 9B. Fig. 10A is a side cross-sectional view of a step in the first specific embodiment of the method for manufacturing a contact structure. Fig. 10B is a contact structure The first cross-sectional side view of another step in a specific embodiment of the manufacturing method. FIG. 10C is an intermediate product formed in the step shown in FIG. 10B of the first-item specific embodiment of a manufacturing method according to a contact structure. The top plan view of this paper. This paper scale is applicable to Chinese National Standard (CNS) A4 specification (2 丨 0X297 public meals) -----:-; ---- (Please read the precautions on the back before filling this page), vs 473562 Printed by the Consumer Standards Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs A7 B7 V. Description of the Invention (13) Figure 10D is a side cross-sectional view of another step in the first example of a specific embodiment of the manufacturing method of the contact structure. 10E is a side cross-sectional view of another step in the first enumerated embodiment of the contact structure manufacturing method. FIG. 10F is shown in FIG. 10E in the first enumerated embodiment of the contact structure manufacturing method. The top plan view of the intermediate product formed in the step. Figure 10G is a side cross-sectional view of another step in the first embodiment of the method for manufacturing the contact structure. Figure 10H is the first step in the method of manufacturing the contact structure. A cross-sectional view of the end of the product formed in the step shown in Fig. 10G of a specific embodiment is shown. Figs. 101 and 10J are perspective views of two of the many possible types of contact structures of the present invention. The bottom of the funnel. Figure 101 illustrates the structure formed by partially coating the side wall of the opening, which is roughly shown in Figures 10E and 10G. Figure 10J shows the structure formed by completely coating the side wall of the opening, as shown in Figures 10E and 10G As shown. Fig. 10K is a top plan view of an intermediate product formed in the step shown in Fig. 10G, which is a first example of a specific embodiment of a manufacturing method of a contact structure. 10L and 10M are cross-sectional and perspective views of individual side surfaces of a completed contact structure formed on an electronic component according to a first specific embodiment of a method for manufacturing a contact structure. Fig. 10N is a side cross-sectional view of the contact structure of Figs. 10L and 10M, the top end of which is in contact with a contact pad of an electronic component. Fig. 100 is a cross-sectional view of J of the contact structure of Figs. 10L and 10M, the top end of which is a contact pad soldered to an electronic component. _-16- This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page).

、1T 473562 第87120343號專利申請案 中文說明書修正頁(89年12月) A7 B7 五、發明説明( 年 Β ί;! B9.12. l 6 圖11係說明供圖10K及相關圖形之接點結構用之一種較 佳成形物之頂部平面圖。圖示符號簡單說明 經濟部中央標準局員工消費合作杜印製 102 表示導線骨架的形成; 104 表示塗覆的沉積; 106 表示熱處理; 202 表示一基處; 204 表示一導線骨架; 206 表示一塗層; 208 表示一塗覆之導線; 210 表示一經熱處理之塗層; 212 表示一經熱處理之經塗覆導線; 300 表示一接點結構; 302 表示一基底部分; 304 表示一接點末端部分; 306 表示一中央主體部分; 308 表示一特徵; 310 表示一斜截頭角錐形之接合特徵; 402 表示一經熱處理曲線; 404 表示一塗覆曲線; 460 表示一彈簧接點構件; 462 表示一基底末端; 470 表示一電子组件; 472 表示一銷釘; -17- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 訂 .- 473562 第87120343號專利申請案 中文說明書修正頁(89年12月) 五、發明説明(14a ) A7 B71T 473562 Patent Application No. 87120343 Amendment Page of Chinese Specification (December 89) A7 B7 V. Description of Invention (Year B ί ;! B9.12. L 6 Figure 11 illustrates the contacts for Figure 10K and related graphics A top plan view of a preferred shaped object for the structure. The symbol indicates the consumer cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs. Du printed 102 indicates the formation of the wire skeleton; 104 indicates the coating deposition; 106 indicates the heat treatment; 202 indicates a base Where: 204 indicates a wire skeleton; 206 indicates a coating; 208 indicates a coated wire; 210 indicates a heat-treated coating; 212 indicates a heat-treated coated wire; 300 indicates a contact structure; 302 indicates a Base part; 304 represents a contact end part; 306 represents a central body part; 308 represents a feature; 310 represents a joint feature of an oblique truncated pyramid; 402 represents a heat-treated curve; 404 represents a coating curve; 460 represents A spring contact member; 462 represents a base end; 470 represents an electronic component; 472 represents a pin; -17- The paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) (please read the precautions on the back before filling this page).-473562 No. 87120343 Patent Application Chinese Correction Sheet (December 89) V. Description of the invention (14a) A7 B7

902 表示一基材; 904 表示一經構圖之第一遮蔽層 906 表示一經構圖之第二遮蔽層 908 表示一經構圖之第三遮蔽層 912 表示一區域; 914 表示一導電性材料; 920 表示一導電性金屬材料; 922 表示一底端; 924 表示一頂端; (請先閲讀背面之注意事項再填寫本頁) 表示開孔; 表示傾斜區域; 表示突出特徵; 經濟部中央標準局員工消費合作社印製 932, 934 and 936 表示箭頭; 1002 表示一矽基材; 1004 表示一鈍化層; 1006 表示一開孔; 1008, 1008a and 1008b 表示金屬接點墊片; 1010 表示一導電層; 1020 表示一遮蔽層; 1022, 1022a and 1022b 1023, 1023a and 1023b 1030, 1030a and 1030b 1040 表示一模板; 1042, 1042a and 1042b 表示開孔; 1050 表示一晶種層; 1050a and 1050b 表示經構圖之軌跡; 1052a and 1052b 表示底端; 1053, 1053a and 1053b 表示傾斜區域; 17a- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) 473562902 indicates a substrate; 904 indicates a patterned first shielding layer 906 indicates a patterned second shielding layer 908 indicates a patterned third shielding layer 912 indicates a region; 914 indicates a conductive material; 920 indicates a conductive material Metal material; 922 indicates a bottom end; 924 indicates a top end; (Please read the notes on the back before filling this page) indicates openings; indicates inclined areas; indicates prominent features; printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs , 934 and 936 indicate arrows; 1002 indicates a silicon substrate; 1004 indicates a passivation layer; 1006 indicates an opening; 1008, 1008a and 1008b indicate metal contact pads; 1010 indicates a conductive layer; 1020 indicates a shielding layer; 1022, 1022a and 1022b 1023, 1023a and 1023b 1030, 1030a and 1030b 1040 represents a template; 1042, 1042a and 1042b represents an opening; 1050 represents a seed layer; 1050a and 1050b represent a patterned trajectory; 1052a and 1052b represent a bottom End; 1053, 1053a and 1053b indicate slanted area; 17a- This paper size applies Chinese National Standard (CNS) A4 regulations Grid (210X 297 mm) 473562

第87120343號專利申請案 A7 中文說明書修正頁(89年12月) B7 T**^*nv λ- Λ^·· 年 《 Η > ' t*. ,一 $ 、恭日日# Η日/ μ、 WliU 1054a and 1054b 表示頂端; 1056a and 1056b 表示中央主體部分; 1060, 1060a and 1060b 表示彈簧接點結構; 1062, 1062a and 1062b 表示底端部分; 1063, 1063a and 1063b 表示傾斜區域; 1064, 1064a and 1064b 表示接點頂端; 1066, 1066a and 1066b 表示主體部分; 1070 表示一末端; 1072 表示一電子組件; 1080 表示一末端; 1082 表示一電子组件及 1084 表示一焊料。 V.較佳具體實施例之詳述 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 本發明可以幾乎任何形狀之未經塗覆配件開始。一般而 言,可將本發明材料塗覆於任何適當基底或成形物上,然 後在如所述之中度條件下熱處理,而得有用之產物。此基 底或成形物可以或可以不保留,依特定應用而定。經塗覆 材料之沉積,會極早地在塗覆方法中組織成所要之結構^ 可能在所沉積材料之最初數百埃内,且數毫米或甚至數厘 米厚之塗層顯示之性質,在經熱處理後,係提供具有本文 中所討論之經改良機械性質之材料。 當與研究中之材料之其他可能狀態比較時,在特定結構 中之經熱處理材料之機械性質上之特殊改良,可包括增加 -17b- 本纸張尺度適用中國國家標準(CNS ) A4規格(210X29·/公釐) ~Γ / ~Γ /No. 87120343 Patent Application A7 Revised Chinese Manual (December 89) B7 T ** ^ * nv λ- Λ ^ ·· Year "Η > 't *. , 一 $ , 恭 日 日 # Η 日 / μ, WliU 1054a and 1054b represent the top end; 1056a and 1056b represent the central body part; 1060, 1060a and 1060b represent the spring contact structure; 1062, 1062a and 1062b represent the bottom end part; 1063, 1063a and 1063b represent the inclined area; 1064, 1064a and 1064b indicate the top of the contact; 1066, 1066a and 1066b indicate the main part; 1070 indicates an end; 1072 indicates an electronic component; 1080 indicates an end; 1082 indicates an electronic component and 1084 indicates a solder. V. Detailed description of the preferred embodiment Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (please read the notes on the back before filling out this page) The invention can begin with uncoated accessories in almost any shape. In general, the materials of the present invention can be applied to any suitable substrate or shaped article and then heat treated under moderate conditions as described to obtain useful products. This substrate or shaped article may or may not be retained, depending on the particular application. The deposited material will be organized into the desired structure very early in the coating process ^ It may be within the first few hundred angstroms of the deposited material, and the properties shown by a coating of several millimeters or even several centimeters thick, in After heat treatment, materials with improved mechanical properties as discussed herein are provided. When compared with other possible states of materials under study, special improvements in the mechanical properties of heat-treated materials in specific structures may include the addition of -17b- This paper size applies Chinese National Standard (CNS) A4 specifications (210X29 · / Mm) ~ Γ / ~ Γ /

罘8712〇343號專利申請案 中文說明書修正頁(89年12月) "" — ----- 五、發明説明(i14e) L:上大約最高)之降服強度’增加(較佳為大約最高)之 =數,及爾之溫度安定性。其他可能狀態包括剛 =覆(熱處理前)之材料,及廣泛回火(例如,為使 和)後之材料。 交 =此藝者可按照本發明之陳術,選擇性地控制材 枓性貝。例如’熱處理可經選擇以獲得最低延展性,或可 經選擇’以選擇性地獲得較多延展性4類似方式,吾人 :=熱處理’以獲得低於最高降服強度,或低於最高彈 =:吾人也許期望例如平衡各種材料性質或順應其他 μ限制’但仍然遵照本發明之陳述内容,以製造… 改艮性質之材料,勝過剛塗覆而未熱處理之材料。 C請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 -17c ------ 本紙張尺度適财國國家縣(CNS ) A4規格(210X 297公爱罘 87112〇343 Chinese Application for Correction Sheet of the Patent Application (December 89) " " — ----- V. Description of the Invention (i14e) L: Approximately the highest). (Approximately the highest) = number, and temperature stability. Other possible states include materials that have just been overclad (before heat treatment), and materials that have been extensively tempered (for example, for tempering). The artist can selectively control the quality of the shellfish according to the technique of the present invention. For example, 'heat treatment can be selected to obtain the lowest ductility, or can be selected' to selectively obtain more ductility. 4A similar way, we: = heat treatment 'to obtain lower than the maximum yield strength, or lower than the maximum elasticity =: We may expect, for example, to balance the properties of various materials or to comply with other μ restrictions' but still follow the statements of the present invention to make materials with properties that are better than those that have just been coated but not heat treated. C Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs -17c ------ This paper is suitable for countries and counties (CNS) A4 size (210X 297 public love)

五、發明説明(15 經濟部中央標準局員工消費合作社印製 供基底用 < 一種特佳成形物爲細長構件,譬如骨架或臨 時支木。一種較佳骨架爲導線,其依次可被固定至基材或 基底’或以其他方式支撑。另一種較佳骨架爲橫揉,其係 經固足但經取向以避開基材或基底。特佳係使用可被製成 彈簧形狀之細長構件。此細長構件並非必須具回彈性,而 事實上可爲完全可撓性,以幫助成形爲任意或所要之形式 〇 本發明之基質材料亦可以其他方式沉積。例如,所要之 成形物可措由應用各種材料,被界定於譬如矽晶圓之基材 上,正如此項技藝中所習知者。此種材料可包括供某些應 用使用之光阻。—成形物可藉由構圖、蝕刻等而被界定, 然後準備供電鍍,其方式是沉積薄晶種層,例如含銅金屬 層。可將此基質材料鍍敷至該晶種層上,並按下述熱處理 。一邵份或甚至全部其下方之材料,可容易接受選擇性移 除,,留下已沉積之本發明材料,部份或完全不含最初基材 1選擇性移除可在熱處理步驟之前或之後達成,按需要而 定。 、另種沉積材料之較佳方法係爲漱射β材料可以適當形 式沉積,然後可經熱處理以改良材料性質。圖〗顯示根據 本發明t 一項較佳具體實施例,製造經塗覆導線方法之流 程圖。 仙 首先,使小導線骨架204 (參閲圖2A)在基底2〇2 (參閲圖 上形成1〇2。例如,導線骨架2〇4可由金導線製成,且形成 作用102可使用導線黏結機完成。基底2〇2可包括例如半導 本紙張尺度逋财_家揉準7^s ) A4規格(2]0X'~^------__ H- ^^1 I ^^1 i - ....... -i-i C请先閲讀背齒之注意事項真填寫本萸〕 "•• .II I I I · 473562 A7 B7 五、發明説明(16 ) 體基材。許多其他基底202當然可行,譬如包括陶瓷、塑 膠或金屬基材之基底。 其次,使塗層206 (參閲圖2B)沉積104於導線骨架204上。 塗層206可爲例如使用包含糖精作爲添加劑之鍍敷浴所沉 積之大約50-50 (原子百分比)鎳-姑(Ni-Co)合金。糖精在鍍敷 浴中之濃度,係參考圖8討論於下文。此浴液可更換以改 變Ni/Co比例,或加入不同添加劑以代替糖精。多種鍍敷浴 之變型均可使用。 在一種替代沉積方法中,未加入添加劑。適當材料與適 當沉積條件係經選擇,以使材料以非晶質形式沉積,此形 式易於接受本發明之熱處理。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 一般預期以鎳、鈷或鐵(Ni、Co、Fe)爲基料之塗層,會 獲得大致上類似之結果。較佳合金包括Ni-Co、Co-Mn、Ni-Mn,及各種三元合金,譬如Ni-Co-Mn。替代之塗層材料包 括Ni-W-B與Rh。其他可行之塗層包括Pd、Pd-Au、Pd-Co、 W、W-Co、Ti-N、Cu、Cr、Ti、Ti-W、A1、Au 及 Pt。替代 添加劑包括茶-三-磺酸(NTSA)、2- 丁炔-1,4-二醇及硫脲。其 他可行之添加劑包括NiCl、NiBr,以及一般之種類1與種類 2增白劑。所有此等塗層材料與添加劑,均爲鍍敷技藝上 所習知。 第三,使剛塗覆之導線208 (參閲圖2B)在溫度高於塗層 206之轉變溫度下接受熱處理106,因此形成經熱處理之經 塗覆導線212 (參閲圖2C)。例如,Ni-Co合金之熱處理106可 在350°C下歷經十分鐘或在300°C下歷經六十分鐘完成。熱 _-19-_ 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) A7 B7 五、發明説明(17 ) (請先閱讀背面之注意事項再填寫本頁) 處理106應發生之時間與溫度範圍(意即熱處理限幅)係參 考圖4與8描述於下文。當然,對不同合金或添加劑系統, 可能需要不同熱處理計劃。 圖2A爲連接至基底2〇2之導線骨架2〇4之橫截面圖。骨架 204可以各種形狀形成,譬如所顯示者,以製造可使用之 回彈性配件。一種有用之形狀爲彈簧,或有彈性形狀。不 同形狀都可使用,依回彈性配件所欲之應用而定。或者, 骨架2〇4可爲直導線。 圖2B爲剛塗覆導線2〇8之橫截面圖,其包含塗層2〇6覆蓋 導線204。相關於骨架204之厚度,塗層2〇6具有足以顯著地 衝擊剛塗覆導線208機械性質之厚度。如下文參考圖5A所 述,剛塗覆之塗層206具有非晶質或毫微結晶性原子組態 〇 經濟部中央標準局員工消費合作社印製 圖2C爲經熱處理之經塗覆導線212之橫截面圖,其包含 經熱處理之塗層210,覆蓋導線骨架2〇4。經熱處理之經塗 覆導線212 ,係藉由將剛塗覆之導線2〇8在溫度大於未經熱 處理塗層206之轉變溫度下加熱1〇6,較佳係歷經相對較短 時間而形成。如下文參考圖5B所述,經熱處理之塗層21〇 具有結晶性或有序原子組態。再者,正如藉由下文參考圖 8所述之試驗結果所証實者,經熱處理之經塗覆導線212係 爲回彈性’且在接受模擬操作條件後,保持其回彈性遠優 於剛塗覆之導線208。因此,塗層206之厚度係足以對該經 塗覆及經熱處理之結構賦予回彈性。 代表性導線可具有直徑約1至丨5密爾(25至38微米),具 -20- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公襲) 473562 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(18 有塗層厚度在1_5密爾(38微米)之譜,以提供總直徑約4密 爾(100微米)。塗層厚度低達2〇〇至5〇〇埃顯示此處討論之性 質。塗層可相對較厚,當然是毫米且可能在厘米或較大之 譜’並且仍然顯示此處討論之性質。 有用I塗層可使用電鍍沉積。典型鍍敷浴與操作法係如 下述。此説明例,較佳爲實施例,係提供具有經改良硬度 與機械性質之合金,並具有大約最低限度之共沉積硫。一 種杈佳微晶劑爲苯并醯硫亞胺鈉s),亦稱爲糖精 鈉。此種及其他微晶劑係爲熟諳此藝者所習知。雖然含硫 物質使用於此較佳具體實施例中,但這似乎不是絕對ς: 。例如,已証實2- 丁炔4,4_二醇,在實施本發明上是有效 的。此添加劑或沉積條件應促進所要塗層結構之形成,如 下文所討論者。 電鍍係爲熟諳此藝者極爲明瞭的。當採用所概述之電解 質組成、電極、有關聯之電流密度、沉積物厚度及特定裝 置之條件時,在本揭示内容建議之熱處理溫度下,沒有风 硫化物於晶粒邊界沉澱之証據。此沉澱作用不存在,會促 進防止晶粒邊界形成及鬆脆性,否則其可能因而導致產品 過早損壞。 成功之產物性能係來自高降服強度,伴隨著適當延展性 。經驗已証實"帶狀”(或層狀)塗層結構,會導致有利產物 性能。添加晶粒微化添加劑,譬如莕_三_磺酸、 NDSA、對-甲苯磺醯胺或(較佳爲)糖精鈉,將產生此"帶狀 作用”,以在產物中進一步提高降服強度及所要之彈回特 (請先閲讀背面之注意事項再填寫本頁)V. Description of the invention (15 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs for use in substrates < A particularly good shaped object is an elongated member, such as a skeleton or a temporary branch. A preferred skeleton is a wire, which in turn can be fixed to The substrate or substrate 'or other support. Another preferred skeleton is horizontal kneading, which is fixed but oriented to avoid the substrate or substrate. Particularly preferred is the use of an elongated member that can be made into a spring shape. This elongated member does not have to be resilient, but in fact can be fully flexible to help shape into any or desired form. The matrix material of the present invention can also be deposited in other ways. For example, the desired shaped article can be used by the application Various materials are defined on substrates such as silicon wafers, as is known in the art. Such materials may include photoresists for certain applications.-Shaped objects can be patterned, etched, etc. Is defined, and then power plating is prepared by depositing a thin seed layer, such as a copper-containing metal layer. This matrix material can be plated onto the seed layer and heat treated as follows. Or even all the materials below it can be easily accepted for selective removal, leaving the material of the present invention deposited, partially or completely free of the original substrate 1. Selective removal can be achieved before or after the heat treatment step, as per It depends on the need. Another preferred method of depositing materials is to deposit the beta material in a suitable form and then heat-treat to improve the material properties. The figure shows a preferred embodiment according to the present invention. A flowchart of a method for coating a wire. First, a small wire frame 204 (see FIG. 2A) is formed on a substrate 200 (see FIG. 10). For example, the wire frame 204 may be made of a gold wire, And the forming action 102 can be completed by using a wire bonding machine. The substrate 202 may include, for example, a semi-conductive paper size of 逋 财 _ 家 揉 准 7 ^ s) A4 specification (2) 0X '~ ^ ------__ H -^^ 1 I ^^ 1 i-....... -ii C Please read the notes on the back teeth first and fill in this note] " •• .II III · 473562 A7 B7 V. Description of the invention (16 ) Bulk substrate. Of course many other substrates 202 are possible, such as substrates including ceramic, plastic or metal substrates Second, a coating 206 (see FIG. 2B) is deposited 104 on the lead frame 204. The coating 206 may be, for example, about 50-50 (atomic percent) nickel-gum (deposited) deposited using a plating bath containing saccharin as an additive. Ni-Co) alloy. The concentration of saccharin in the plating bath is discussed below with reference to Figure 8. This bath can be changed to change the Ni / Co ratio, or different additives can be added instead of saccharin. Variations of various plating baths are Can be used. In an alternative deposition method, no additives are added. Appropriate materials and suitable deposition conditions are selected so that the material is deposited in an amorphous form, which is easy to accept the heat treatment of the present invention. Consumption by employees of the Central Bureau of Standards, Ministry of Economic Affairs Printed by a cooperative (please read the notes on the back before filling out this page) It is generally expected that coatings based on nickel, cobalt, or iron (Ni, Co, Fe) will have roughly similar results. Preferred alloys include Ni-Co, Co-Mn, Ni-Mn, and various ternary alloys, such as Ni-Co-Mn. Alternative coating materials include Ni-W-B and Rh. Other possible coatings include Pd, Pd-Au, Pd-Co, W, W-Co, Ti-N, Cu, Cr, Ti, Ti-W, Al, Au, and Pt. Alternative additives include tea-tri-sulfonic acid (NTSA), 2-butyne-1,4-diol and thiourea. Other possible additives include NiCl, NiBr, and general Type 1 and Type 2 whitening agents. All these coating materials and additives are known in the art of plating. Third, the freshly coated wire 208 (see FIG. 2B) is subjected to heat treatment 106 at a temperature higher than the transition temperature of the coating 206, thereby forming a heat-treated coated wire 212 (see FIG. 2C). For example, the heat treatment 106 of Ni-Co alloy can be completed at 350 ° C for ten minutes or at 300 ° C for sixty minutes. Hot _-19-_ This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) A7 B7 V. Description of invention (17) (Please read the precautions on the back before filling this page) Processing 106 should happen The time and temperature range (meaning heat treatment limit) is described below with reference to FIGS. 4 and 8. Of course, different heat treatment plans may be required for different alloys or additive systems. FIG. 2A is a cross-sectional view of a lead frame 204 connected to a substrate 200. FIG. The skeleton 204 can be formed in various shapes, such as those shown, to make a resilient elastic fitting that can be used. A useful shape is a spring or elastic shape. Different shapes can be used, depending on the desired application of the elastic accessory. Alternatively, the skeleton 204 may be a straight wire. FIG. 2B is a cross-sectional view of a freshly coated wire 208 that includes a coating 206 covering the wire 204. In relation to the thickness of the skeleton 204, the coating 206 has a thickness sufficient to significantly impact the mechanical properties of the freshly coated wire 208. As described below with reference to FIG. 5A, the newly applied coating 206 has an amorphous or nanocrystalline atomic configuration. Printed by the Consumer Cooperatives of the Central Standards Bureau, Ministry of Economic Affairs. Figure 2C shows the heat-treated coated wire 212. A cross-sectional view that includes a heat-treated coating 210 covering the lead frame 204. The heat-treated coated wire 212 is formed by heating the freshly-coated wire 208 at a temperature greater than the transition temperature of the unheated coating 206 for 106, preferably over a relatively short period of time. As described below with reference to FIG. 5B, the heat-treated coating 21 has a crystalline or ordered atomic configuration. Furthermore, as confirmed by the test results described below with reference to FIG. 8, the heat-treated coated wire 212 is resilient, and it retains its resilience much better than just coated after accepting simulated operating conditions. Of the wire 208. Therefore, the thickness of the coating 206 is sufficient to impart resilience to the coated and heat-treated structure. Representative wire can have a diameter of about 1 to 5 mils (25 to 38 microns), with -20- This paper size applies to China National Standard (CNS) A4 specifications (210X297 public attack) 473562 Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs Print A7 B7 V. Description of the invention (18 has a spectrum with a coating thickness of 1-5 mils (38 microns) to provide a total diameter of about 4 mils (100 microns). The coating thickness is as low as 2000 to 500. Angstrom shows the properties discussed here. The coating can be relatively thick, of course millimeters and possibly in centimeters or larger spectrum and still shows the properties discussed here. Useful I coatings can be deposited using electroplating. Typical plating baths The method of operation is as follows. This illustrative example, preferably an example, provides an alloy with improved hardness and mechanical properties, and has about a minimum of co-deposited sulfur. A good microcrystalline agent is benzopyrene sulfur Sodium imine s), also known as sodium saccharin. This and other microcrystalline agents are well known to those skilled in the art. Although sulfur-containing materials are used in this preferred embodiment, this does not seem to be absolute:. For example, 2-butyne 4,4-diol has been shown to be effective in practicing the present invention. This additive or deposition conditions should promote the formation of the desired coating structure, as discussed below. The electroplating department is very clear to those skilled in this art. When using the outlined electrolyte composition, electrodes, associated current density, deposit thickness, and specific device conditions, there is no evidence of wind sulfide precipitation at the grain boundaries at the heat treatment temperatures suggested in this disclosure. This precipitation does not exist, which will help prevent the formation of grain boundaries and brittleness, otherwise it may lead to premature product damage. The product properties of success are derived from high drop strength, with appropriate ductility. Experience has shown that " belt-like " (or layered) coating structures can lead to favorable product properties. Addition of grain micronizing additives such as hydrazine_tri_sulfonic acid, NDSA, p-toluenesulfonamide or (preferably To) Sodium saccharin will produce this "band-like effect" to further increase the strength of the drop-off and the desired rebound characteristics in the product (please read the precautions on the back before filling this page)

473562 經濟部中央標準局員工消費合作社印製 A7 B7五、發明説明(19 ) 性。此等添加劑一般而言不應與欲被沉積之主要金屬(一 或多種)形成合金,但應與其共沉積。某些合金之薄沉積 物,包括鈷與鎳之共沉積,可能不會顯示可見之"帶狀作 用”,但卻提供可觀之降服強度。 合金沉積:雖然下述溶液組成、控制及操作條件,對於 此較佳具體實施例係爲特定的,但熟諳合金電鍍技藝者可 針對其他應用產生具有優越性質之可比擬電沉積物。會影 嚮電沉積中之合金組成之經認可因素,包括在溶液中電解 質Ni/Co比例;電流密度,電解質攪拌,pH値,溫度;硼酸 及金屬總濃度。 較佳沉積物性質:剛電鍍(未經熱處理) 組成:60% ± 2%鎳(重量比),40% ± 2%鈷 硬度:〜550 Knoop 極限強度:〇" u 265 min ksi (ksi =千 psi) 降服強度:cr y 160 min ksi 模數:E22 ± 2 (Msi)(最低値)(Msi =百萬 psi) 伸長率·· 4.5% ± 0.5% 沉積物外觀:沉積物係爲平滑且連續,具有高光譜反射 度。習用Hull Cell Panel試驗顯示此外觀涵蓋寬廣範圍之鍍敷 電流密度。 典型溶液組成:本發明用以製造具有高回彈性產物之一 項較佳實施例,係示於下表1中。鍍敷係在習用鍍敷槽桶 中進行,譬如層流聚丙烯槽桶。鍍敷時間與條件係按需要 而定,以獲得令人滿意之塗層。 _-22- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) 訂 473562 A7 B7 五、發明説明(2〇 表1 -典帮組忐 化學品典型组成 1) 100克/升 2) 38克/升 3) 3-5毫升/升(@ 18%濃) 4) 8.3 克 / 升(8.3 克 Co) 5) 25達因/公分 6) 1〇〇毫克/升 I----.---- (請先鬩讀背面之注意事項再填寫本頁) 1) 胺基磺酸Ni 2) 硼酸 3) 溴化Ni 4) 胺基磺酸Co 5) 月桂基硫酸鈉 6) 糖精Na 在本發明之一項典型方法中,可將此等物質之整體或一 邵份以下表2中之替代物質取代。 產-替代物晳成Μ么 典型替代化學品 1)胺基磺酸Ni la)硫酸Ni lb)醋酸Ni lc)氟硼酸Ni ΐφ 氣化Ni le)硫酸Ni-氣化]STi 焦蹲酸473562 Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs A7 B7 V. Invention Description (19). These additives should generally not be alloyed with the major metal (s) to be deposited, but should be co-deposited with them. Thin deposits of certain alloys, including co-deposition of cobalt and nickel, may not show visible "banding", but provide considerable yield strength. Alloy deposition: Although the following solution composition, control and operating conditions For this preferred embodiment, it is specific, but skilled alloy plating technicians can produce comparable electrodepositions with superior properties for other applications. Approved factors that affect the composition of alloys in electrodeposition include Electrolyte Ni / Co ratio in solution; current density, electrolyte agitation, pH 値, temperature; total concentration of boric acid and metal. Preferred deposit properties: freshly plated (without heat treatment) Composition: 60% ± 2% nickel (weight ratio) , 40% ± 2% cobalt hardness: ~ 550 Knoop ultimate strength: 〇 " u 265 min ksi (ksi = thousand psi) yield strength: cr y 160 min ksi modulus: E22 ± 2 (Msi) (minimum 値) ( Msi = million psi) Elongation 4.5% ± 0.5% Appearance of the sediment: The sediment is smooth and continuous with high spectral reflectance. The conventional Hull Cell Panel test shows that this appearance covers a wide range of plating currents. Typical solution composition: A preferred embodiment of the present invention for producing products with high resilience is shown in Table 1 below. Plating is performed in a conventional plating tank, such as a laminar flow polypropylene tank. Barrels. Plating time and conditions are determined as needed to obtain a satisfactory coating. _-22- This paper size applies to China National Standard (CNS) A4 (210X297 mm) (Please read the note on the back first Please fill in this page again.) Order 473562 A7 B7 V. Description of the invention (2) Table 1-Typical composition of typical chemical group 1) 100 g / l 2) 38 g / l 3) 3-5 ml / l (@ 18% concentrated) 4) 8.3 g / l (8.3 g Co) 5) 25 dyne / cm 6) 100 mg / l I ----.---- (Please read the precautions on the back first Fill out this page) 1) Ni sulfonic acid 2) Boric acid 3) Ni bromide 4) Co sulfamic acid 5) Sodium lauryl sulfate 6) Saccharin Na In a typical method of the present invention, these can be The whole or one part of the substance is replaced by the substitute substance in Table 2 below. Production-substitutes are cleared into typical alternative chemicals 1) Amino sulfonic acid Ni la) Sulfate Ni lb) Acetic acid Ni lc) Fluoroborate Ni ΐφ Of Ni le) sulfate Ni- gasification] STi acid pyrophosphate squatting

Ni 2a)擰檬酸 經濟部中央標準局員工消費合作社印製 2) 硼酸 3) 溴化Ni 4) 胺基續酸c〇 5) 潤濕劑 6) 種類1增白劑 7) 平整劑 3a)氯化Ni 3b)氯化鎂 4a)硫酸Co 4b)氯化Co 4c)氟棚酸Co 5a)經設計供鍍敷應用之市售潤濕劑 6a)對-甲苯績醯胺 6b)葚三績酸鈉 6c)荅二績酸或上述6a-6c之組合 7a)香豆素7b)喹啉 7c) 2- 丁块-1,4-二 醇或種類1增白劑與平整劑之组合。 在一較佳具體實施例中,係將塗層材料沉積在已被製成Ni 2a) Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economics of the Citric Acid Industry 2) Boric acid 3) Ni bromide 4) Amino acid c 05) Wetting agent 6) Type 1 whitening agent 7) Leveling agent 3a) Ni 3b Chloride 4M) Magnesium Chloride 4a) Co 4b Sulfate Chloride 4 Co) Chlorofluoride Co 5a) Commercially available wetting agents designed for plating applications 6a) p-Toluidine amine 6b) Sodium triphosphate 6c) Perylene dipic acid or a combination of 6a-6c above 7a) Coumarin 7b) Quinoline 7c) 2-Butyl-1,4-diol or a combination of a type 1 whitening agent and a leveling agent. In a preferred embodiment, the coating material is deposited on

經濟部中央標準局員工消費合作社印製 473562 A7 ------ -B7 五、發明説明(21 ) :頁形式之導泉上。在適當加熱後’經熱處理之彈簧 受模擬操作條件後,係實質上保持細彈性。此種特性係 馬彈簧所極爲期望的,尤其是對使用在半導體裝置 體封裝、半導體晶片、用以接觸—或多種半導體裝置之電 子裝置、用以測試-或多種半導體裝置之電子裝置、探測 插件、探測物、連接器、插人物或套筒上者而言。此種特 性係爲彈簧所極爲期望的,無論何時,回彈性之維持對於 保持壓力接點是很重要的。此相同特性對於在高溫下受到 負載歷經長時期,而具有任何形狀或幾何形狀之純粹 組件亦爲有利的。 於本文中所述之較佳具體實施例,係以覆蓋導線之塗層 爲基礎,其可以或可以不被製成所要之形式。本發明之陳 述内容亦可用於塗覆其他成形物。特別是,可將欲被塗覆 之物體在熱處理步驟之前或之後,自此新穎塗層移除。參 閲,例如共待審美國專利申請案序號08/802,054,其標題爲" 微電子接點結構及其製法",與本發明共同歸屬於 FormFactor公司,現在是Livermore (California)。此申請案與其相 應之PCT專利申請案序號97/08271,於1997年5月15曰提出申 請,並於1997年11月27日公告爲WO 97/44676,係揭示在基 材上形成一種結構,然後自基材移除該結構,而產生無支 撑配件。參閲,例如圖3A、3B及3C (個別爲該參考申請案 之圖3A、3B及4E),其係顯示一種在基材上形成之結構(圖 3A),一種未使用基材之相同結構(圖3B) ’及一種連接至不 同基材之結構(圖3C)。使用本發明之陳述内容,熟諳此藝 ___-9Λ- 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐〉 (請先閱讀背面之注意事項再填寫本頁) 訂 473562 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(22 ) 者可在適當時間下塗覆圖3A、3B及3C之結構,以製備如 在本揭示文中所陳述之塗層。例如,可使彈簧接點構件 460 (圖3C)接合至電子组件470,然後塗覆及熱處理。或者 ,可在移除犧牲性基材252之前,將接點結構300 (圖3A、 3B)塗覆及熱處理。 圖3A與3B係説明藉由所引用申請案中所述技術製成之接 點結構300之多種可能具體實施例中之另一種。犧牲性基 材252係用以製備接點結構300。稍微截頭角錐形之接合特 徵(銷釘)310係在接點結構300之基底部份302處,以連附特 徵製成。接點結構300之其餘部份,係爲中央主體部份306 、接點末端部份304及特徵308,此處是一個接觸點。W1與 W2爲在接點結構個別末端之寬度。 圖3C係説明所述發明之替代具體實施例,其中彈簧接點 構件460係經由從電子组件470之表面延伸之銷釘472,裝載 至電子組件470。彈簧接點構件460之基底末端462係經適當 地硬焊至銷釘472。 此外,熟諳此藝者可選擇適合作爲基材以供塗覆之材料 ,應用本發明之陳述内容以塗敷此種塗層,及接著移除基 材,留下由該塗層本身所形成之產物。在一特佳具體實施 例中,接點結構譬如300可建立在適當基材上,以致使該 塗層形成接點結構300材料之整體。一種替代基材可爲導 電層,覆蓋所要形狀之材料,此材料本身可容易地移除。 此種實施例可以呈蠟、光阻或其他材料之成形物開始,然 後塗敷薄導電層以促進鍍敷,鍍敷如本發明中所揭示之塗 _-25- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) 衣. 訂 473562 A7 B7 五、發明説明(23 ) 層,接著熱處理而得具有所要形狀與性質之產物。此種產 物之兩種較佳具體實施例,係詳細描述於本專利説明書結 尾處。 圖4爲類似塗層206之剛塗覆塗層之示差掃描卡計度量法 之圖表。此度量係以最初剛塗覆而未採用加熱之材料開始 ,並以每分鐘10°C增加其溫度,從室溫(約30°C )至500°C, 同時度量熱流量。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 在圖表中,中心位在約266°C之(逆)吸收峰602,係指示 放熱轉變發生在材料中,特別是當溫度在藉由吸收峰602 之寬度所顯示之範園内時。此放熱轉變係被推論爲使微觀 結構與原子組態從剛塗覆塗層206改變成經熱處理塗層210 之轉變。由於吸收峰602顯示係在高於約200°C時開始,故 當使用Ni-Co合金作爲塗層材料時,高於約200°C之熱處理 106應能夠造成此種轉變。但是,通常較佳係選擇溫度接 近或稍微高於該尖峰溫度。在所示實例中,吸收峰係發生 在約266°C,且有用而較佳之熱處理條件包括300°C歷經60 分鐘,或350°C歷經十分鐘。一般而言,熟請此藝者將明瞭 一加熱溫度範圍將獲得所要之作用。一般而言,有用溫度 範圍係在高於吸收峰轉移溫度0與150°C内,且特別有用溫 度範圍係在高於吸收峰轉移溫度0與100°C内。 僅被部份轉變之產物,亦可使用。熟諳此藝者可按照本 發明之陳述内容,獲得所要之轉變量。一般而言,若實質 部份之剛塗覆材料進行轉變至較有序狀態,則可見及在材 料性質上之有用增加。一項特佳實施例係涉及將已塗覆之 _-26- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 473562 經濟部中央標準局員工消費合作社印製 -27- A7 五、發明説明(24 材料在3〇o°C下熱處理十五分鐘。 圖5A爲塗覆塗層2Q6試樣之χ_射線繞射圖樣之圖表。於 圖5中所示之兩個χ_射線繞射吸收峰之顯著寬度,表示約 16毫微米之相對較小平均晶粒大小在材料中。(平均晶粒 大!係使用此項技藝中所習知之Debye_SchejTer公式測定,並 獲得平均晶粒大小之下限)。由於具有平均晶粒大小爲Μ 毫微米,故剛塗覆塗層㈣之特徵可爲毫微結晶 質材料。 圖5B爲根據本發明較佳具體實施例之經熱處理塗層別 試樣之X-射線繞射圖樣之圖表。於此情況中,所施加之熱 處理106爲在33(TC下1〇分鐘。於圖5B中所示兩個吸收峰之 狹窄性,表7F相對較大平均晶粒大小爲約78毫微米在材料 中(再一次使用Debye-Scherrer公式)^由於具有平均晶粒大小 爲78毫微米,故經熱處理之塗層21〇之特徵可爲結晶性或 有序材料。 因此,正如圖5A與5B所示,此塗層材料係在熱處理1〇6 期間經歷轉變,從毫微結晶性或非晶質至結晶性或有序。 圖6爲剛塗覆導線208與經熱處理導線2丨2之應力對伸長率 (應變)數據之圖表。此處所測試之此等導線2〇8與212,係 爲直的,而非被製成彈簧形式,因此,此伸長率(應變)度 量値,具有與導線208及212形狀無關聯之材料機械性 意義。 ' 圖6中之數據顯示經熱處理之導線212,與剛塗覆導線2㈨ 比較,具有優越機械性質。經熱處理曲線402,與剛塗覆 本紙張尺度適用中國國家標準(CNS ) A4規格(21GX297公釐 (請先閱讀背面之注意事項再填寫本頁)Printed by the Employees' Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 473562 A7 ------ -B7 V. Description of the Invention (21): Guide on page form. After proper heating, the heat-treated spring is kept substantially finely elastic after being subjected to simulated operating conditions. This characteristic is highly desirable for horse springs, especially for semiconductor device body packages, semiconductor wafers, electronic devices used to contact-or multiple semiconductor devices, electronic devices used to test-or multiple semiconductor devices, and detection plugs. , Probes, connectors, people or sleeves. This characteristic is highly desirable for springs, and the maintenance of resilience is important to maintain pressure contacts at all times. This same characteristic is also advantageous for pure components with any shape or geometry when subjected to a long period of time under high temperature. The preferred embodiment described herein is based on a coating that covers the wire, which may or may not be made into the desired form. The description of the present invention can also be used for coating other shaped articles. In particular, the object to be coated can be removed from the novel coating before or after the heat treatment step. See, for example, co-pending U.S. Patent Application Serial No. 08 / 802,054, entitled "Microelectronic Contact Structure and Method of Making", which belongs to FormFactor, and is now Livermore (California) with the present invention. This application and its corresponding PCT patent application serial number 97/08271 were filed on May 15, 1997 and published as WO 97/44676 on November 27, 1997, which revealed that a structure was formed on the substrate, The structure is then removed from the substrate, resulting in an unsupported fitting. See, for example, Figures 3A, 3B, and 3C (individually Figures 3A, 3B, and 4E of the reference application), which show a structure formed on a substrate (Figure 3A), an identical structure without a substrate (Figure 3B) 'and a structure connected to different substrates (Figure 3C). Use the statement content of this invention, familiar with this art ___- 9Λ- This paper size is applicable to Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) Order 473562 Economy Printed by A7 B7, Consumer Cooperatives of the Ministry of Standards and Standards of the People's Republic of China 5. Inventors (22) can apply the structure of Figs. 3A, 3B and 3C at an appropriate time to prepare a coating as stated in this disclosure. For example, may The spring contact member 460 (FIG. 3C) is bonded to the electronic component 470, and then coated and heat-treated. Alternatively, the contact structure 300 (FIGS. 3A, 3B) may be coated and heat-treated before the sacrificial substrate 252 is removed. 3A and 3B illustrate another of many possible specific embodiments of the contact structure 300 made by the technology described in the cited application. The sacrificial substrate 252 is used to prepare the contact structure 300. Slightly The truncated pyramid-shaped joint feature (pin) 310 is made at the base portion 302 of the contact structure 300, and is made of attaching features. The rest of the contact structure 300 is the central body portion 306, the contact End part 304 and feature 308, this Is a contact point. W1 and W2 are the widths at the individual ends of the contact structure. Figure 3C illustrates an alternative embodiment of the described invention, wherein the spring contact member 460 is via a pin 472 extending from the surface of the electronic component 470, Loaded into the electronic component 470. The base end 462 of the spring contact member 460 is appropriately brazed to the pin 472. In addition, those skilled in the art can select a material suitable for use as a substrate for coating, and apply the statement of the present invention To apply such a coating, and then remove the substrate, leaving a product formed by the coating itself. In a particularly preferred embodiment, the contact structure, such as 300, can be built on a suitable substrate so that The coating is formed as a whole of the material of the contact structure 300. An alternative substrate may be a conductive layer that covers the desired shape of the material, and the material itself can be easily removed. Such an embodiment may be a wax, photoresist, or other material The formed article starts, and then a thin conductive layer is applied to promote the plating. The coating is as disclosed in the present invention. The paper size applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) ( Read the precautions on the back before filling in this page) Clothing. Order 473562 A7 B7 V. Description (23) layer, and then heat treatment to obtain products with the desired shape and properties. Two preferred specific embodiments of this product, It is described in detail at the end of this patent specification. Figure 4 is a chart of the differential scanning card meter measurement of a newly applied coating similar to coating 206. This measurement starts with the material that was just applied initially without heating, The temperature is increased by 10 ° C per minute from room temperature (about 30 ° C) to 500 ° C, and the heat flow is measured. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling in) (In this page) In the graph, the (inverse) absorption peak 602 centered at about 266 ° C indicates that an exothermic transition occurs in the material, especially when the temperature is within the range shown by the width of the absorption peak 602. This exothermic transition is inferred to change the microstructure and atomic configuration from the newly applied coating 206 to the heat-treated coating 210. Since the absorption peak 602 appears to start above about 200 ° C, when using a Ni-Co alloy as a coating material, a heat treatment 106 above about 200 ° C should be able to cause this transformation. However, it is generally preferred to choose a temperature close to or slightly above this peak temperature. In the example shown, the absorption peak occurs at about 266 ° C, and useful and preferred heat treatment conditions include 300 ° C for 60 minutes, or 350 ° C for ten minutes. Generally speaking, the skilled artist will understand that a heating temperature range will achieve the desired effect. In general, the useful temperature range is between 0 and 150 ° C above the absorption peak transfer temperature, and the particularly useful temperature range is between 0 and 100 ° C above the absorption peak transfer temperature. Products that have only been partially converted may also be used. Those skilled in the art can obtain the desired variables according to the content of the present invention. Generally speaking, if a substantial portion of the freshly coated material undergoes a transition to a more orderly state, a useful increase in material properties is visible and useful. A particularly preferred embodiment involves applying the coated _-26- this paper size to the Chinese National Standard (CNS) A4 (210X297 mm) 473562 printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs -27- A7 2. Description of the invention (24 materials are heat-treated at 30 ° C for fifteen minutes. Figure 5A is a chart of the χ_ray diffraction pattern of the coated 2Q6 sample. The two χ_rays shown in Figure 5 The significant width of the diffraction absorption peak indicates a relatively small average grain size of about 16 nanometers in the material. (The average grain size is large! It is determined using the Debye_SchejTer formula known in the art, and the average grain size is obtained. Lower limit). Because it has an average grain size of M nanometers, the characteristics of the newly coated coating ㈣ can be nanocrystalline materials. Figure 5B is a sample of a heat-treated coating according to a preferred embodiment of the present invention. A chart of the X-ray diffraction pattern. In this case, the heat treatment 106 applied is 10 minutes at 33 ° C. The narrowness of the two absorption peaks shown in Figure 5B, Table 7F is relatively large average crystal The particle size is about 78 nm in the material ( The Debye-Scherrer formula is used again) ^ Since the average grain size is 78 nm, the heat-treated coating 21 can be characterized as a crystalline or ordered material. Therefore, as shown in Figures 5A and 5B, this The coating material undergoes a transformation during the heat treatment 10, from nanocrystalline or amorphous to crystalline or ordered. Figure 6 shows the stress versus elongation of the newly coated wire 208 and the heat treated wire 2 丨 2 ( Strain) data. These wires 208 and 212 tested here are straight rather than made in the form of a spring. Therefore, this elongation (strain) measure is 値 and has the same shape as the wires 208 and 212. There is no mechanical significance of the material. 'The data in Figure 6 shows that the heat treated wire 212 has superior mechanical properties compared to the newly coated wire 2㈨. After the heat treatment curve 402, the national standard of the paper that is just coated is applicable to Chinese standards. (CNS) A4 specification (21GX297 mm (please read the precautions on the back before filling this page)

、1T 473562 A7 B7 五、發明説明(25 曲線404比較,顯示較高降服應力(定義爲對0.2〇/。應變之應 力)興較回彈性模數。因此,經熱處理之導線爲彈性,涵 蓋运爲較大範圍之外加應力。這表示經熱處理彈簧之較高 回彈性,且似乎是由於基本材料改良所致。由於大部份機 械組件係經設計以在彈性體系中操作(意即保持其形狀), 故較具回彈性之材料係較具機械安定性。在經熱處理彈簧 中之回彈性材料,在高溫負載下係顯著地改良機械性質之 安定性。 當與研究中之材料之其他可能狀態比較時,在經熱處理 之機械性質上之特殊改良,可包括增加(較佳爲大約 最高)之降服強度,增加(較佳爲大約最高)之彈性模數, 及經改良之溫度安定性。其他可能狀態包括剛塗覆(於熱 處理前)之材料,及廣泛回火(例如,爲了應力緩和)後^ 材料。經改良之溫度安定性,係藉由在高溫負載下增加對 變形乏抵抗性証實,其中溫度可稍高於25°C,包括85-ioot ,及甚至爲300 C或更高。這顯示該材料呈一種比剛塗覆之 最初材料更安定之狀態 (請先閲讀背面之注意事項再填寫本頁)1T 473562 A7 B7 V. Description of the invention (Comparison of 25 curve 404 shows a higher yield stress (defined as the stress against 0.20 /. Strain) than the modulus of resilience. Therefore, the heat-treated wire is elastic and covers transportation Stressing beyond a large range. This indicates the higher resilience of the heat-treated spring, and appears to be due to basic material improvements. Since most mechanical components are designed to operate in elastic systems (meaning to maintain their shape) ), So the more resilient materials are more mechanically stable. The resilient materials in heat-treated springs significantly improve the stability of mechanical properties under high temperature loads. When compared with other possible states of materials under study In comparison, special improvements in heat-treated mechanical properties may include increased (preferably about the highest) drop strength, increased (preferably about the highest) elastic modulus, and improved temperature stability. Others Possible states include materials that have just been coated (before heat treatment), and materials that have been extensively tempered (for example, for stress relief). Improved temperature security Qualitative, confirmed by increasing the lack of resistance to deformation under high temperature loads, where the temperature can be slightly higher than 25 ° C, including 85-ioot, and even 300 C or higher. This shows that the material is a kind of The initial material of the cover is more stable (Please read the precautions on the back before filling this page)

、1T 經濟部中央標準局員工消費合作社印製 圖7爲剛塗覆(在圖7中之,I原始的,,或,贿")導線2〇8與經 熱處理(在圖7中之"經熱處理"或·ΉΤ")導線212之彈性模數 對糖精濃度之圖表。此圖表顯示經熱處理導線212之彈性 模數,對於所測試之所有非零(特別是2〇毫克/升或較大 糖精濃度,係實質上大於剛塗覆導線2〇8之彈性模數。當' 在根據表1配方之鍍敷浴中使用糖精作爲添加劑時,經熱 處理導線212典型上具有彈性模數约32Msi,而剛塗覆^線 -28- 木紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐了 • m Hi · 473562 A7 B7 五、發明説明(26 208典型上具有彈性模數約24 Msi。Msi表示"百萬” psi。 圖8爲從包含糖精之浴液,以Ni-Co塗覆之各種導線,在 0.5英吋心軸試驗下之導線曲率之圖表。此心軸試驗包括將 直的經鍍敷導線環繞具有特定直徑之心軸包覆,以產生固 定應變(心軸材料係經選擇,以具有與導線相同之熱膨脹 係數,以避免由於熱膨脹係數差異所引致之其他應力)。 然後使導線在兩端連接至心軸,以保持此應變。然後可使 心軸-導線組裝曝露至任何時間/溫度組合。此項試驗爲 一種在高溫負載下測試材料性質作爲時間函數之合宜方式 ,其爲一種模擬不同操作條件之極端有用方式。對特定試 驗條件所發生之塑性變形量,係藉由在所形成導線曲率上 之改變作反映,其中曲率係定義爲: 曲率=100* 導線之s〇uter邊緣 _ 半在導線中心 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 圖8顯示不同熱處理溫度對於導線曲率之作用。一组剛 鍍敷之導線具有其在室溫下度量之曲率。然後,使其在不 同溫度下接受7分鐘熱處理,冷卻至室溫,及再一次度量 曲率。使其在室溫下接受兩分鐘心軸試驗,及再一次度量 曲率。然後,使其在85°C下,接受13小時心轴試驗,冷卻 至室溫,及再一次度量曲率。最後,使其在85°C下接受另 外24小時心軸試驗(總延續時間爲在85°C下37小時),冷卻 至室溫,及度量曲率。正如在圖8中所見及者,伴隨著機 械負載在室溫下歷經兩分鐘之塑性變形,於公稱上係與在 不同溫度下熱處理之導線相同。但是,當在高溫下以機械 29- 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐) Α7 Α7 B7 、發明説明( ^ 7 在較尚溫度(‘ 400 C )下熱處理之導線,顯示 較小塑性_形 * 艾〜。這是在熱處理後,經改良機械性質之另一 種指徵。itl·* 1/1 、此寺機械性質對於在Tg350°c下熱處理之經塗覆 導線而言,其士 是恒定的,與圖4之結果—致(參閱上文 相關敎科書)。 „ ^又説明已詳細討論某些Ni與M/C〇系統,其中具有多種 j添力州,特別是糖精。但是,此等一般原理可用以嫂 數極多種且古夕仏、 夕種添加劑之系統,然後在中度條件下熱處 、而彳于具有所要性質之產物。在某些沉積條件下,不需 要添加劑。 ,可犯(金屬系统係詳細列示^上文。迄今使用之添加劑 、’大郅份包含硫,但已使用2- 丁炔-1,4-二醇,以獲得所要 I轉變在—較佳具體實施例中,浴液濃度大於或等於約 2〇 =克/升之糖精係爲有用。在另一較佳具體實施例中 :浴液濃度大於或等於約5毫克/升之2-丁炔·Μ_二醇,係 爲有用的。 、雖然此等物理性質並不完全瞭解,但一般理論是剛沉積 之材料具有不平衡之毫微結晶性結構。若添加劑存在,則 八係主相對較低濃度,且係被分散在整個剛沉積之塗層中 。若將已塗覆之材料力0熱一段時間,貝晶體結構會重組而 得較大晶體]添加劑會擴散,且主要金屬會以一種受添加 劑分子所影衡之方式進行組織,可能成爲直接捧入添加劑 之晶體,可能成爲順應添加劑分子之晶粒,或可能呈某種 至今尚未明瞭之結構。進一步熱處理會導致不同组織,其 本紙張尺度適用中國國家標準(CNS ) A4規格(21〇x2=Jj· ------•”--*---- (請先閱讀背面之注意事項再填寫本頁)1T printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs Figure 7 is just coated (in Figure 7, I original, or, bribe ") wire 208 and heat treated (in Figure 7 " Heat treated " or " ") chart of elastic modulus versus saccharin concentration of the lead 212. This graph shows the elastic modulus of the heat-treated wire 212 for all non-zero (especially 20 mg / L or greater saccharin concentrations tested), which is substantially greater than the elastic modulus of the freshly coated wire 208. When '' When saccharin is used as an additive in the plating bath according to Table 1, the heat-treated wire 212 typically has an elastic modulus of about 32 Msi, and the newly coated wire -28- Wood paper size applies Chinese National Standard (CNS) A4 Specifications (210 X 297 mm • m Hi · 473562 A7 B7 V. Description of the invention (26 208 typically has a modulus of elasticity of about 24 Msi. Msi stands for “Million” psi. Figure 8 shows a bath solution containing saccharin. A graph of the curvature of the wires under a 0.5-inch mandrel test with various wires coated with Ni-Co. This mandrel test includes wrapping a straight plated wire around a mandrel with a specific diameter to produce a fixed Strain (mandrel material is selected to have the same coefficient of thermal expansion as the wire to avoid other stresses due to differences in the coefficient of thermal expansion). The wire is then connected to the mandrel at both ends to maintain this strain. The strain can then be made heart Shaft-wire assembly is exposed to any time / temperature combination. This test is a convenient way to test material properties as a function of time under high temperature loads. It is an extremely useful way to simulate different operating conditions. What happens to specific test conditions The amount of plastic deformation is reflected by the change in the curvature of the formed wire, where the curvature is defined as: curvature = 100 * the edge of the conductor of the conductor _ half printed on the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (Please read the notes on the back before filling this page) Figure 8 shows the effect of different heat treatment temperatures on the curvature of the wire. A group of freshly plated wires has a curvature measured at room temperature. Then, it is accepted at different temperatures 7 minutes heat treatment, cooling to room temperature, and measuring the curvature again. It was subjected to a two-minute mandrel test at room temperature, and the curvature was measured again. Then, it was subjected to a 13-hour mandrel test at 85 ° C. , Cooled to room temperature, and measured the curvature again. Finally, it was subjected to another 24 hours mandrel test at 85 ° C (total duration is 8 37 hours at 5 ° C), cooled to room temperature, and measured curvature. As seen in Figure 8, plastic deformation at room temperature with mechanical load after two minutes at nominal temperature and at different temperatures The heat-treated wires are the same. However, when mechanically used at high temperature 29- This paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) Α7 Α7 B7, the description of the invention (^ 7 at the higher temperature ('400 C) The wire under heat treatment shows a smaller plastic shape * Ai ~. This is another indication of improved mechanical properties after heat treatment. Itl · * 1/1, the mechanical properties of this temple are under Tg350 ° c For heat-treated coated conductors, the cheat is constant, consistent with the result of Figure 4 (see the relevant monograph above). „^ It is also explained that certain Ni and M / C systems have been discussed in detail, which has a variety of Timing states, especially saccharin. However, these general principles can be used for a wide range of additives and ancient additives System, and then heat treatment under moderate conditions, and suffocate products with the desired properties. Under certain deposition conditions, additives are not required. Can be offended (metal systems are listed in detail above. Additives used so far, 'Large portion contains sulfur, but 2-butyne-1,4-diol has been used to obtain the desired I conversion. In a preferred embodiment, the concentration of the bath is greater than or equal to about 20 = grams per liter. Saccharin is useful. In another preferred embodiment: 2-butyne · M_diol with a bath concentration greater than or equal to about 5 mg / L is useful. Although these physical properties are not Fully understood, but the general theory is that the newly deposited material has an imbalanced nanocrystalline structure. If additives are present, the concentration of the eight series is relatively low, and it is dispersed throughout the newly deposited coating. The coated material has a force of 0 heat for a period of time. Larger crystals are obtained through recombination] The additives will diffuse, and the main metals will be organized in a manner affected by the molecules of the additives. They may become crystals that directly attract the additives, may become crystal grains that conform to the additives, or may be This kind of structure has not been known so far. Further heat treatment will lead to different organizations, and its paper size applies the Chinese National Standard (CNS) A4 specification (21〇x2 = Jj · ------ • "-* ---- (Please read the notes on the back before filling this page)

、1T 經濟部中央標準局員工消費合作社印製 473562 A7 五 、發明説明(28 ) 經濟部中央標準局員工消費合作社印製 中基質材料會組織成大結構 .一 —π _…一,、—加^ 收集成沉澱物與主要金屬分離之情況。其係爲傳统回火德 所造成之結構(其通常亦未包含本發明之添加劑)。 確定可使用量之添加劑,及可使用之熱處理條件,並不 困難。雖然可藉由研究所選擇之添加劑在基質金屬系統年 又擴散速率以進行預測,但少數實驗將極迅速地概述主要 參數。最可能發生中度熱處理之溫度範園可加以選擇,其 万式是將所要之金屬系統塗覆至適當基材,然後如上述翅 行示差掃描卡計法(DSC)。轉移溫度可容易地鑒定,且該調 =恤度乏尖峰係爲隨後實驗之良好起點。對此最初實驗而 言,添加劑之量並不很重要,因爲添加劑對於此卢 只有極少或無作用。 @ 可使用之添加劑量可經確認,其方式是製備試驗產物, 使用不同量之添加劑,例如2.5%、1%、〇1%及〇〇1%,以 莫耳爲基準,然後在於或接近上文確認之溫度下熱處理, :經短暫時間,例如5、10或20分鐘。所形成經熱處理產 物〈抗張強度,顯示該條件獲得所要之機械性質。特別有 ^試驗結構,係爲適合在傳統抗張強度試驗機中測試之 傳統狗骨㈣結構。或者,錢覆之導線將提供有用之張 力訊息。使用關於有效量添加劑之最初訊息,則可評估不 同時間與溫度條件,以快速歧出—组可使用之條件。 =添加劑量而言,在以不同量熱處理下,降服應力 p曰增加至最大値,但接著降低。—般而言,最大降服 應力將發現於減理料之相對財帶處(平 與溫 不包括添加劑 ------;--*---- (請先閱讀背面之注意事項再填寫本頁)1T printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 473562 A7 V. Description of the Invention (28) Matrix materials will be organized into a large structure in the printing of the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. ^ Collected to separate the precipitate from the main metal. It is a structure caused by traditional tempering (it usually also does not include the additives of the present invention). It is not difficult to determine the amount of additives that can be used and the heat treatment conditions that can be used. Although it is possible to predict the diffusion rate of the matrix metal system by the additives selected by the study, a few experiments will outline the main parameters very quickly. The temperature range at which moderate heat treatment is most likely to occur can be selected by applying the desired metal system to an appropriate substrate and then performing DSC as described above. The transfer temperature can be easily identified, and this tone is a good starting point for subsequent experiments. For this initial experiment, the amount of additive was not important, as the additive had little or no effect on this. @ The usable additive dosage can be confirmed by preparing test products, using different amounts of additives, such as 2.5%, 1%, 〇1%, and 〇01%, based on Mohr, and then lying on or close to Heat treatment at the temperature confirmed by the text: After a short time, such as 5, 10 or 20 minutes. The resulting heat-treated product, <tensile strength, shows that the conditions achieve the desired mechanical properties. In particular, the test structure is a traditional dog bone structure suitable for testing in a conventional tensile strength testing machine. Alternatively, the money-covered wire will provide useful tension information. Using the initial information about the effective amount of the additive, different time and temperature conditions can be evaluated to quickly discriminate-conditions that the group can use. = In terms of the added dose, under different heat treatments, the reduction stress p increases to the maximum 値, but then decreases. —In general, the maximum stress of surrender will be found at the relative financial belt where the material is reduced (Ping and Wen do not include additives ------;-* ---- (Please read the notes on the back before filling (This page)

、1T, 1T

473562 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(29 ) 度)。此時點可能不會獲得所要之延展性質。一般而言, 超過此最大降服應力條件點之熱處理,將會增加延展性, 而在熱處理上之適度增加,會獲得一種具有接近最高降服 應力以及所要延展量之配件。持續熱處理,最後將使降服 應力降低,通常是使經處理塗層之回彈性降低。此持續熱 處理通常將會增加延展性。確認熱處理條件,以在特定塗 層系統中,在受到該塗層系統之限制下,賦予所要之降服 應力程度及所要之延展性程度,係良好地在此項技藝之技 術範園内。 熟諳此藝者可利用實驗設計之原理,以相對容易地確認 關鍵成份與數値。此領域已是相當可觀學術興趣之主題。 例如,在加州伯克莱大學之圖書館中,於1997年9月,在 電子卡片目錄中列示大約287件參考資料,關於實驗設計 。參閲 www.lib.berkeley.edu ,或特別是 www.lib.berkeley.edu/ENG/ about.html。特定言之,因子實驗設計或分數因子之研究, 可能是有用的。伯克莱收藏資料列出大約十四種有關聯參 考資料。其中特別令人感興趣者,可能是基本參考資料” 實驗者用之統計學,設計、數據分析及模式建立導論 n, George E.P. Box, Wiley, New York (1978),及&quot;經驗模式建立與回 應表面 ' George E.P. Box 與 Norman R. Draper, Wiley, New York (1987) o 回彈性接點結構之列舉具體實施例 適用於熱處理之基底結構之代表性具體實施例,已伴隨 著圖2A-2C及圖3A-3C描述於上文。本發明之熱處理方法可 -32- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) ------,---- (請先閱讀背面之注意事項再填寫本頁) 、1Τ 經濟部中央標準局員工消費合作社印製 473562 A7 --—----—_______ 五、發明説明(30 ) 與其他回彈性接點成形物—起使用,特別是另外兩項美國 (及相應PCT以及其他外國)申請案主題之成形物。其在某 些細節上或許有助於考量此等實例。473562 Printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs A7 B7 V. Description of Invention (29) Degree). At this point, the desired extensional properties may not be obtained. Generally speaking, heat treatment beyond this point of maximum yield stress will increase ductility, while a moderate increase in heat treatment will result in a fitting with a maximum yield stress and the desired amount of elongation. Continued heat treatment will eventually reduce the yield stress, usually reducing the resilience of the treated coating. This continuous heat treatment will generally increase ductility. Confirm the heat treatment conditions to give the required degree of yield stress and the required degree of ductility in a specific coating system, subject to the restrictions of the coating system, which are well within the technical park of this technology. Those skilled in the art can use the principles of experimental design to relatively easily identify key ingredients and data. This area is already a subject of considerable academic interest. For example, in the library of the University of California, Berkeley, in September 1997, about 287 references were listed in the e-card catalogue regarding experimental design. See www.lib.berkeley.edu, or especially www.lib.berkeley.edu/ENG/about.html. In particular, factorial experimental designs or fractional factorial studies may be useful. The Berkeley Collection lists approximately fourteen related references. Those who are particularly interested may be the basic reference materials. "Introduction to Statistics, Design, Data Analysis, and Model Building Used by Experimenters, George EP Box, Wiley, New York (1978), and" Empirical Model Building and Response Surfaces' George EP Box and Norman R. Draper, Wiley, New York (1987) o Examples of Resilience Contact Structures Specific Examples Representative specific examples of substrate structures suitable for heat treatment have been accompanied by Figures 2A-2C And Figures 3A-3C are described above. The heat treatment method of the present invention can be -32- This paper size is applicable to China National Standard (CNS) A4 specifications (210X297 mm) ------, ---- (please first Read the notes on the back and fill in this page), 1473 printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, 473562 A7 -------------- _______ 5. Description of the invention (30) and other resilient contact forming objects—from Uses, in particular the shaped articles of the subject of two other US (and corresponding PCT and other foreign) applications. It may help to consider these examples in some detail.

對實施本發明之目的而言,上文伴隨著圖2A_2C與3A_3C 所列示之材料’在製造此等列舉具體實施例中所述之回彈 性接點結構時,係爲特佳的。 1997年5月6日提出申請,共同持有之共待審美國專利申 凊案08/852,152,其標題爲&quot;微電子彈簧接點構件&quot;,揭示一 種有用產物,及製造類似上文所討論構件之方法。其相應 之PCT申請案係在i997年u月2〇日以w〇 97/43654公告。上文 所时淪之材料可使用於製造申請案〇8/852,152產物之方法中 ,且可進一步按本文中所揭示,經熱處理以製造優越接點 構件。 一般而1:,係將許多其中具有開孔之遮蔽層對準,並以 了層導電性材料,,接種,,。然後,可使導電性材料團塊在經 接種之開孔中形成(或沉積),譬如藉電鍍(或、濺射、 無電鍍敷等)。在將遮蔽層移除後,該團塊可充作無支撑 回彈性接點結構,此種結構不僅可在组件表面上垂直延伸 而且可以從裝載位置側向延伸。依此方式,可容易地將 接點結構設計爲在2_軸《及在x_y平面(平行於組件之表面: 兩者之上具有順應性。現在,將其更詳細地針對圖 9C (WO 97/43654揭示内容之圖1A_1C)加以描述。 回想此接點構件係爲回彈性,因此&quot;順應性m (變形之調 整)會隨著從安放位置位移之量及接點構件之彈力常數(恢 本紙浪尺度適用中國國家襟準(CNS)八4祕(210χ297公餐) ---------衿一—-- (請先閱讀背面之注意事項再填寫本頁) 、?τ 復力)而改變。小位移係被相對較小恢復力反抗,但較大 位移係被較大恢復力反抗。 圖9A係説明在基材9〇2上製造多個無支撑回彈性(彈簧) 接點構件之一之技術舉例。基材9〇2可爲有源電子组件, 包括半導體裝置,特別是包括留置在半導體晶圓上之半導 體裝置(未示出)。 基材902具有多個(示出多個中之一)區域912在其表面上 ,於其巾可製造彈簧接點構件。在一較佳具體實施例中, 其中基材902爲電子組件,譬如半導體裝置,區域912爲電 子組件之末端(譬如黏結墊片)。在另一個較佳具體實施例 中,藉由變更路徑,使主要末端連接至導電性材料,譬如 金屬軌跡,及在電子組件上之某一不同位置連接至遠距末 |场。各種變更路控之型式,係爲此項技藝中所明瞭的。關 於本發明之一般技術,變更路徑之初步討論可參閱PCT申 請案 PCT/US95/14885,於 1996 年 5 月 23 日以 WO %/15459 公告。 經濟部中央標準局員工消費合作社印製 此種變更路徑作用,可用於從第一個陣列至第二個陣列 再標示一組末端。一種有用之再標示路線方法,係爲將周 園黏結墊片陣列變更路徑至一個區域陣列。另一種有用之 再標示路線方法係爲將中央導線黏結墊片陣列變更路徑至 一個區域陣列。變更路徑作用通常可在使電接點定位上提 供很大彈性。下述方法可用以在主要末端上建立接點構件 ,且同樣良好地在遠距末端建立接點構件。 一般而言,製造產物9〇〇之技術係涉及施用許多(顯示三 個)具有開孔之經構圖遮蔽層904、906及908至基材表面上 _____-ru-___ 本紙張尺度適财® S家縣(CNS ) A4規格(210X297公釐) 經濟部中央標準局員工消費合作社印製 五、發明説明(32 ) 。此等層係經構圖以具有與區域912對準之開孔(如所示) ,且此等開孔係經裁切尺寸及成形,因此在一層(例如 9〇6)中之開孔,係比在其下層(例如個別之90ό、904)中之 開孔,進一步從區域912延伸。換言之,第一層9〇4具有一 個開孔,直接在區域912上方。第二層906中之一部份開孔 、’係對準覆蓋在第一層9〇4中之至少一部份開孔上,及反 之,一邵份第一層904係延伸在第二層906中之一部份開孔 I方。同樣地,在第三層908中之一部份開孔,係對準覆 盍在第二層906中之至少一部份開孔上方,及反之,—部 份第二層906係延伸在第三層908中之一部份開孔下方。L 個特定整體開孔之底邵邵份,係直接覆蓋所選定之區域 912,且其頂部部份係被提高,並於側向偏離其底部部份 正如將於下文更詳細地討論者,係將導電性金屬材料沉 積,開孔中,並移除遮蔽層,而造成已直接在基材上製成 、‘、支撑接點結構,其底端係在區域912處固定至基材 ,而其自由端係延伸在基材表面上,及自區域912側向位 移。 若需要’譬如對電鍍而言,可將導電性材料914之極 例如4500埃)&quot;晶種&quot;層,譬如鈦/鎢_沉積至開孔中。 =後,可藉電鍍使導電性金屬材料(例如鎳)92〇之團塊沉 積至開孔中。約αι至10密爾,較佳爲約密爾,且更 佳馬約1至3密爾之金屬沉積物,係爲特佳的。一種特 屬爲鎳。 &quot; 圖犯與9C係説明所形成之彈簧接點構件,其底端似 本紙張ϋ逋用中榡準(CNS ) Α4規格(21G^^ -----^--i---- (請先閱讀背面之注意事項再填寫本頁)For the purpose of implementing the present invention, the materials listed above along with FIGS. 2A_2C and 3A_3C are particularly good when manufacturing the resilient contact structures described in these specific embodiments. An application was filed on May 6, 1997, and the co-pending U.S. patent application 08 / 852,152, jointly held, entitled "Microelectronic Spring Contact Member", discloses a useful product, and manufactures similar to the above Discuss methods of building blocks. Its corresponding PCT application was announced on September 20, 1997 as WO 97/43654. The materials as described above can be used in the method of manufacturing the product of application 08 / 852,152, and can be further heat treated to produce superior contact components as disclosed herein. Generally, 1: aligns many shielding layers with openings in them, and injects a layer of conductive material. Then, masses of conductive material can be formed (or deposited) in the inoculated openings, such as by electroplating (or, sputtering, electroless plating, etc.). After the shielding layer is removed, the mass can act as an unsupported resilient contact structure, which can not only extend vertically on the component surface, but can also extend laterally from the loading position. In this way, the contact structure can be easily designed to be compliant on the 2_axis <and on the x_y plane (parallel to the surface of the component: both. Now, it will be more detailed for FIG. 9C (WO 97 / 43654 discloses the content of Figures 1A_1C). Recall that this contact member is resilient, so the "compliance m (adjustment of deformation) will vary with the amount of displacement from the placement position and the elastic constant of the contact member (recovery The scale of this paper is applicable to the Chinese National Standards (CNS) Eighty-fourth Secret (210 x 297 meals) --------- 衿 一 --- (Please read the precautions on the back before filling this page),? Τ Reply Force). The small displacement system is resisted by a relatively small restoring force, but the larger displacement system is resisted by a larger restoring force. Figure 9A illustrates the manufacture of multiple unsupported rebound springs (springs) on the substrate 902. An example of a technology of a point member. The substrate 902 may be an active electronic component, including a semiconductor device, and in particular a semiconductor device (not shown) placed on a semiconductor wafer. The substrate 902 has a plurality of (shown) One of the multiple) area 912 on its surface, can make bombs on its towel Spring contact member. In a preferred embodiment, the substrate 902 is an electronic component, such as a semiconductor device, and the region 912 is the end of the electronic component (such as a bonding pad). In another preferred embodiment, By changing the path, the main end is connected to a conductive material, such as a metal trajectory, and at a different position on the electronic component to the remote end field. Various types of road control changes are used in this technology. It is clear. For a preliminary discussion of the general technology of the present invention and the changing path, please refer to the PCT application PCT / US95 / 14885, published as WO% / 15459 on May 23, 1996. Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs This rerouting function can be used to mark a group of ends from the first array to the second array. A useful method of relabeling is to reroute the Zhouyuan bonding pad array to an area array. Another A useful re-marking method is to change the path of the central wire bonding pad array to an area array. The effect of changing the path is usually to make the electrical contacts The following methods provide great flexibility. The following methods can be used to build a contact member on the main end, and equally well to build a contact member on a remote end. Generally speaking, the technique of making the product 900 involves applying a lot (show (3) Patterned masking layers 904, 906, and 908 with openings on the surface of the substrate _____- ru -___ This paper size is suitable for wealth® Sjia County (CNS) A4 size (210X297 mm) Central standard of the Ministry of Economy Printed by the Bureau ’s Consumer Cooperatives. V. Invention Description (32). These layers are patterned to have openings aligned with area 912 (as shown), and these openings are cut to size and shaped, so The openings in one layer (for example, 906) are further extended from the area 912 than the openings in the lower layer (for example, 90 °, 904). In other words, the first layer 904 has an opening directly above the region 912. A part of the openings in the second layer 906 is aligned to cover at least a part of the openings in the first layer 904, and vice versa, a portion of the first layer 904 extends on the second layer. A part of 906 is opened in a square. Similarly, a portion of the openings in the third layer 908 is aligned over at least a portion of the openings in the second layer 906, and vice versa, a portion of the second layer 906 extends in the first One of the three layers 908 is under the opening. The bottom of the L specific overall openings, Shao Shaofen, directly covers the selected area 912, and its top portion is raised and deviates laterally from its bottom portion. As will be discussed in more detail below, the The conductive metal material is deposited, opened in the holes, and the shielding layer is removed, resulting in a ', and support contact structure that has been made directly on the substrate. Its bottom end is fixed to the substrate at area 912, and its The free end extends on the surface of the substrate and is laterally displaced from the region 912. If necessary, such as for electroplating, a layer of conductive material 914 (e.g. 4500 angstroms) &quot; seed &quot; layer, such as titanium / tungsten, can be deposited into the openings. After that, agglomerates of conductive metal material (such as nickel) 92 can be deposited into the openings by electroplating. Metal deposits of about α to 10 mils, preferably about mils, and more preferably about 1 to 3 mils, are particularly preferred. One characteristic is nickel. &quot; Figure culprit and 9C are spring contact members formed with descriptions, the bottom end of which is similar to this paper, and is used in the standard (CNS) A4 specification (21G ^^ ----- ^-i ---- (Please read the notes on the back before filling this page)

、1T 473562, 1T 473562

經濟部中央標準局員工消費合作社印製 係鄰近區域912,及其自由端(頂端)924係在基材9〇2表面上 之z-軸中升间,以及在χ_轴與y_轴上侧向偏離底端。 正如最良好地在圖9C中所見及者,接點構件92〇將會對 被施加在Z-軸中,於其頂端924處之壓力有反應,該壓力係 如藉由前頭924所表示者,譬如由於進行與另一個電子組 件(未示出)之末端(未示出)之暫時壓力電連接所造成。於 z-軸上之順應性,係確保接觸力(壓力)將被保持,以及適 應第二個搭配電子組件(未示出)末端(未示出)間之非平面 性(若具有時)。此種暫時電連接可用於製造對電子组件 902之暫時或甚至長期連接。 頂端924亦在X-與y_方向上順應地自由移動,如個別由箭 頭936與934所示者。這就使頂端924接合(藉軟焊或硬焊, 或使用導電性黏著劑)至另一個電子組件(未示出)之末端( 未示出)而論,是很重要的,該電子組件具有與基材(組件) 902不同之熱膨脹係數。此種永久性電連接可用於電子組 件之組裝,譬如多個記憶晶片(各以基材9〇2表示)至另一 個電子組件,譬如互連基材,例如印刷電路板(&quot;pcB” ; 示出)。 藉由材料與幾何形狀之適當選擇,此等被製成之團塊92〇 可充作無支撑回彈性接點結構,其已被製成具有極精密尺 寸,及彼此間之極精密間隔。例如,》十個或數千個此種 彈簧接點構件(920)係容易且精密地以相應數目之末端在半 導體裝置上製成,該半導體裝置” £在半導體晶:(未 本紙張尺度適用中國國家標準(CNS ) A4規格(2丨〇&gt;&lt;297公釐)The adjacent area 912 of the printing department of the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs, and its free end (top end) 924 is in the z-axis on the surface of the substrate 902, and on the χ_ and y_ axes. Sideways off the bottom. As best seen in FIG. 9C, the contact member 920 will respond to the pressure applied in the Z-axis at its top 924, as indicated by the front 924, For example, due to a temporary pressure electrical connection to the end (not shown) of another electronic component (not shown). Compliance in the z-axis is to ensure that the contact force (pressure) will be maintained and to accommodate non-planarity (if any) between the ends (not shown) of the second paired electronic component (not shown). Such temporary electrical connections can be used to make temporary or even long-term connections to the electronic component 902. The top end 924 also moves freely in the X- and y_ directions, as shown by the arrows 936 and 934, respectively. It is important that the top end 924 is joined (by soldering or brazing, or using a conductive adhesive) to the end (not shown) of another electronic component (not shown), which has Coefficient of thermal expansion different from the substrate (component) 902. This kind of permanent electrical connection can be used for the assembly of electronic components, such as multiple memory chips (each represented by a substrate 902) to another electronic component, such as an interconnect substrate, such as a printed circuit board (&quot; pcB "; (Shown). With the proper selection of materials and geometries, these fabricated masses 92 can be used as unsupported resilient contact structures, which have been made to have extremely precise dimensions and polarities between each other. Precisely spaced. For example, "ten or thousands of such spring contact members (920) are easily and precisely made on a semiconductor device with a corresponding number of ends, and the semiconductor device" Paper size applies Chinese National Standard (CNS) A4 specification (2 丨 〇 &gt; &lt; 297 mm)

自極一般透视圖看來,在遮蔽材料中經構圖之開孔,係 構成一種成形物,可於其中沉積材料,並於稍後經熱處理 。對電艘目的而言,較佳係按上述沉積晶種層。此晶種層 亦可被認爲是一種成形物,可於其上沉積材料,並於稍後 經熱處理。材料可藉一些其他方法直接沉積至開孔中,譬 如經過罩蓋濺射,或其他沉積方法,極像關於晶種層所述 者’但使用適合後續熱處理之材料,及沉積此材料至可用 於製造有用結構之厚度。此處再一次,於遮蔽材料中之開 孔係形成一種成形物,其係界定最後形成結構之形狀,達 顯著程度。 生接點結構之第二個列舉具體實施例 上述關於圖9A-9C之方法,係利用三層(904, 9〇6, 9〇8)遮蔽材 料,其必須經構圖且塗敷於彼此之上,而造成多層壕溝, 可於其中沉積材料920。 經濟部中央標準局員工消費合作社印製 種可比擬之接點結構,可以較少層之遮蔽材料(例如 光阻)製成。如前述,這特別可用於微電子應用。圖ι〇Α_ 10L係説明本發明技術之具體實施例。此等圖及伴隨之説 明,係取自共待審、共同歸屬之美國專利申請案序號 〇9/032,473,於1998年2月26日提出申請,其標題爲&quot;以石印 方式界定微電子接點結構&quot;,亦參閲1998年5月14日提出申 請之相應PCT申請案PCT/US98/09999。 圖10A顯示一種舉例之電子組件,可於其上製造多個接 點結構。在後文之主要内容中,單一接點結構(1〇6〇)之製造 ’將被描述爲製造多個此種接點結構之舉例,較佳爲全 473562 經濟部中央標準局員工消費合作社印製 A7 B7五、發明説明(35 ) 同時在相同電子組件或基底上。典型上,在單一组件上製 造之各接點結構,將實質上彼此相同(意即尺寸、形狀等) ,但使用此項技藝中已知之技術,各接點結構之尺寸與形 狀可個別地加以控制,並由設計者針對特定應用要求條件 作決定。 在此項較佳實施例中,電子組件爲半導體裝置,其包含 矽基材1002,鈍化層1004 (例如,聚醯亞胺,約4微米厚), 經配置在矽基材1002之表面上,及多個(示出多個中之一) 開孔1006,經過鈍化層1004延伸至金屬接點墊片1008。典 型上,有多個此種接點墊片在電子組件上。於先前技藝中 ,在一個完整组裝内,各接點墊片典型上係連接(例如, 與黏結導線一樣)至另一個電子組件(未示出)上之相應接 點墊片,該另一個電子組件譬如導線架,及最後成爲薄而 小之外形封裝(TSOP)。 此處,如圖10A中所示,在此方法之第一個步驟中,係 沉積導電層1010。導電層1010係爲例如鈦-鎢(Ti-W),其可 藉濺射沉積至約3000-6000 A (埃)之厚度,譬如至約4500 A之 厚度。導電層1010係實質上順應地且鄰接地覆蓋鈍化層 1004之表面,開孔1006之側壁及金屬接點墊片1008之外露 表面(在開孔1006内)。導電層1010較佳爲導電性,且若以 連續”被覆&quot;層沉積時,將與電子组件之所有接點墊片(1〇〇8) 一起形成電短路。正如將從下文説明而得以明白的,導電 層1010之此種短路特徵,可有利地被採用,以建立供電解 程序(例如電鍍)用之適當電位,以在電子組件上製造接點 _-2ft-_ 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) 473562 A7 B7 五、發明説明(36 ) 結構。 在一較佳具體實施例中,導電層1010係具有圖樣而非連 續,並可被沉積爲多個非鄰接區域。在另一個較佳具體實 施例中,導電層1010係覆蓋末端1008之外露表面。在一替 代具體實施例中,導電層1010僅覆蓋末端1008之一部份。 在另一替代具體實施例中,導電層1010完全未覆蓋末端 1008,但足夠接近末端1008,以致當塗敷晶種層1050時, 其係與導電層1010接觸。 在一較佳具體實施例中,可將另一種材料(譬如金)之第 二個導電層,在導電層1010上沉積與構圖。這可用於例如 達成局部互連體,及信號從接點墊片1008變更路徑至接點 結構(1060)。一般而言,雙層對於許多應用可能較佳。適當 材料之選擇,係在此項技藝之技術範圍内。 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 在一較佳具體實施例中,接點墊片(1008)係在基材(1002) 之表面上,或在基材本身之表面(已外露)中,而無鈍化層 (1004),惟鈍化層通常係存在於半導體裝置上。在沉積導電 層1010之前,可視情況先將鈍化層1004 (若有一層存在時)π 弄粗糙&quot;,以加強導電層1010對鈍化層1004之黏著性。這可 簡單地以下述方式達成,使電子組件曝露至氧(02)電漿, 使用適當參數(其可容易地由熟諳此藝者決定)以在鈍化層 上獲得所要之表面组織。材料之選擇亦會影嚮晶種層對鈍 化層之黏著性。例如,已知鈥-鎮(Ti-W)或銅,會良好地黏 著至聚醯亞胺。 如圖10B中所示,在此方法之下一步驟中,係將一層遮 _-39-_ 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 473562 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明(37 ) 蔽材料(例如光阻)1020沉積至組件1002之表面上(意即,至 導電層1010上),且經構圖(例如,使用習用光石印術技術) 以加入開孔1022,完全延伸經過遮蔽層1020。開孔1022可 位在覆蓋(如所示)鈍化層1004中開孔1006之位置,或可位 在遠離開孔1006,及因此遠離接點墊片1008之位置。 如上述,及如在參考資料09/032,473揭示内容中更詳細地 描述者,經由將開孔1022定位在遠離接點墊片1008之位置 ,則可在電子组件上製造多個接點結構,其平面佈置係與 電子組件接點墊片之佈置不同。一種特佳型態是將開孔 1022定位,因此於其上建立之接點結構,將在相當於典型 球格柵陣列之區域陣列中具有尖端。開孔可連接至電子组 件上之接點墊片,經排列成例如周圍墊片。可有利地製造 與接點墊片實質上相同而無位移之接點結構。在此情況中 ,將開孔1022定位在相應於最後接點結構之尖端陣列之區 域陣列中,是有用的。 各開孔1022較佳係具有比接點墊片1008上方開孔1006之面 積大之面積。例如,尺寸爲4密爾X 4密爾(意即100微米 X 100微米)之方形接點墊片1008,係具有外露面積爲10,000 平方微米,而尺寸爲200微米X 200微米之方形開孔1022係具 有面積爲40,000 (接點墊片1008外露面積之四倍)。具有直徑 爲200微米之圓形開孔1022,係具有面積爲31,400平方微米( 接點蟄片1008外露面積之約三倍)。一般而言,開孔較佳係 曝露出約1〇,〇〇〇與約40,000平方微米間之末端及/或基材之 面積,最佳係超過約30,000平方微米。以下雖然不是本發 -=-40-_ 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) (請先聞讀背面之注意事項再填寫本頁) 473562 A7 經濟部中央標準局員工消費合作社印製 B7五、發明説明(38 ) 明之主要特徵,但作爲一般提議,接點結構之足區(底端 區域)應提供足夠面積,以供接點結構之機械固定(黏著) 至電子組件。 關於開孔1022,其較佳爲推拔狀,且在推拔狀開孔底部 之尺寸,對方形開孔而言,係在200微米X 200微米之譜, 或對圓形開孔而言,係爲200微米直徑。在空間有限且此 等尺寸爲不可能之應用中,可使用可取得之空間。例如, 當處理在125微米中心上具有100微米X 100微米墊片之電子 組件時,開孔1022可具有大約105微米X 105微米、110微米 X 110微米等之尺寸,包括非方形尺寸。或者,在空間有限 之應用中,接點結構之底部可位在遠離其電連接之墊片處 ,並具有較大(例如200微米)之較佳尺寸。開孔1022之推拔 狀(傾斜)區域,在圖10B中係被指定爲參考數字1023。 遮蔽層1020較佳係被沉積至厚度爲至少約50微米,或者 至厚度爲至少約1〇〇微米,至少約150微米,及至少約200微 米。遮蔽層1020可被沉積爲多層。將決定接點結構之主體 部份與電子組件表面之間隔距離者,主要是遮蔽層1020之 整體厚度。注意圖10L中所示彈簧接點構件1060之主體部份 1066與基底部份1062之偏移距離&quot;d2&quot;。 開孔1022之側壁(邊壁),較佳爲推拔狀,因此開孔在遮 蔽層1〇2〇之表面處,可比在導電層1010處較大。這稱爲&quot;正 ”推拔。無推拔會造成具有90°角之陡峭側壁。開孔側壁較 佳係具有約60-75°之平均推拔角。這可容易地使用光阻作爲 遮蔽層1020之材料,並烘烤光阻及使其再流動而達成。一 _-41 -_ 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) (請先閲讀背面之注意事項再填寫本頁) 473562 A7 經濟部中央標準局員工消費合作社印製 B7五、發明説明(39 ) 般熟諳本發明所最接近相關技藝者,在明白參考資料 09/032,473揭示内容中所提出之説明後,將立即瞭解如何控 制側壁推拔。推拔狀開孔可以任何適當方式形成,且事實 上可爲階梯狀,就像倒置階梯狀截頭角錐一般。控制遮蔽 層(1020)中開孔(1022)之形狀,係更詳細地討論於09/032,473 揭示内容中。 圖10C爲圖10B電子组件之頂部平面圖,顯示兩個開孔 1022a與1022b在遮蔽層1020中,各開孔個別與兩個接點墊片 1008a及1008b (以虚線顯示)之一結合。開孔1022a與1022b之 推拔狀區域,在此圖中係個別以參考數字l〇23a與1023b指稱 如圖10D中所示,在此方法之下一步驟中,對多個開孔 1022之每一個所選定者,可將突出特徵1030沉積至遮蔽層 1020之表面上,其中心係在與開孔1022之中心相距&quot;L”處。 正如即將明白的,此特徵1030將界定在電子組件上製成之 所形成接點結構(1060)之接點端(頂端)(1064),且距離&quot;L”係 表示在電子組件上製成之接點結構(1060)之基底(1062)與頂 端(1064)間之直線距離。突出特徵1030可爲材料之”網點&quot;或 &quot;團塊&quot;,例如,顯示壓扁半球形。有用且較佳之突出特徵 ,包括少量環氧樹脂光阻或其類似物,其可適當地經過模 板或利用習用網版印刷技術塗敷。突出特徵1030亦可爲導 電性材料。呈壓扁半球形網點形式之突出特徵1030之適當 尺寸,係爲約5-15密爾(125-375微米)直徑,及約2密爾(50微 米)高度。在一較佳具體實施例中,此突出特徵可較消痩( _-42- 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標率局員工消費合作社印裝 4/3562 五、發明説明(40 例如,小於约5密爾寬), 炱鈐眘恋Μ丨』丄λ 在另一個具體實施例中,其可 爲較寬廣(例如大於約1S密爾寬)。對典刑 ^其丄 度較佳係在約2-7.5密爾之範園内。 土途而言,其咼 如更詳細地在09/032,473揭示内容中所 用於該突出特徵,更廣義言接,、他形狀可 疋所形成頂㈣〇64)心多種形狀,包括 “) 球形,及角錐形、圓錐形或半. ®錐形或半 ,環形等。 ,及十字形 一般熟諳此藝者在明白本文所 ^ 所徒出又説明後,將立即明 瞭如何應用與控制突出特徵1〇3〇之形狀。 與模板(未示出)以產生突出特 'σ,吏用光阻 H , n 出特徵1030,其中模板係在適當 ,置上,可將光阻軟烘烤,以自模板釋出突出特徵,然後 移除模板,進行硬烘烤。 在所形成微電子彈簧接點結構之底端(舰)與頂端(刪) 間之距離,,L”,可在例如約10-麵密爾之範圍内,較佳係在 約10-50密爾之範圍内。 如圖10Ε中所tf,在此方法之下_步驟中,可將模板(陰 影罩蓋)1040配置在遮蔽層1〇2〇之表面上。模板1〇4〇具有多 個(示出多個中之一)開孔1042。如所示,開孔1〇42係自開 孔1022延伸至相應突出特徵1〇3〇。模板1〇4〇可適當地爲薄 的(例如,約2密爾(50微米)厚)不銹鋼箔,其可經穿孔或蝕 刻以具有開孔1042。模板1〇4〇可爲具有任何適當厚度之任 何適當材料,其將允許晶種層1050被沉積在遮蔽材料1〇2〇 上’呈相應於開孔1042形狀之導電軌跡圖樣。 -43 各紙張尺度適用中國國家榇準(CNS ) M規格(2丨οχ297公釐) H·—— - IJ I - 1J - I (請先閲讀背面之注意事項再填寫本頁) 訂 473562 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明(41 ) 利用置於遮蔽層1020表面之適當位置上之模板1040,將” 晶種”層1050藉譬如濺射,沉積至遮蔽層1020與突出特徵 1030之外露表面上。晶種層1050係被沉積在開孔1〇22之外 露部份内,及在開孔1022内之導電層1010之表面上。晶種 層1050具有傾斜區域1053,其中係將其沉積在遮蔽材料 1020中之開孔1022之傾斜區域1023上。 此種1050晶種層之替代具體實施例,係藉網版印刷導電 性油墨進行沉積。適當導電性油墨包括麵油墨或石墨油墨 。此種材料與方法係用於製造印刷電路板,且爲此項技藝 中所習知。 此晶種層可被認爲是一種成形物,稍後於其上沉積材料 ,以形成本發明之結構。自另一透視圖,此具有圖樣之晶 種層爲一細長组件,其可經塗覆以形成本發明之結構。從 又另一個透視圖,遮蔽材料1020與開孔1022之表面爲一種 成形物,其適合藉由譬如濺射膨鬆材料之方法直接沉積, 該材料適用於本發明之熱處理。此種沉積可經過適當罩蓋 ,藉沉積構圖。 晶種層1050可被沉積成具有許多”軌跡”之圖樣,其中每 一個係爲在上覆模板1040中開孔1042圖樣之物理寫眞。晶 種層1050,在經構圖後,係充作欲被製造在電子組件上之 接點結構之先質。例如,在電鍍方法中,晶種層1050之導 電性軌跡,每一個將充作電形成物,於是可在其上製造接 點結構(1060)之物質(團塊)。 遮蔽材料1020之選擇,及沉積晶種層1050之方法,必須 _-44- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁) €衣. 訂 473562 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(42 ) 一起考量。遮蔽材料在沉積方法之環境中必須是安定的。 例如,典型正型光阻材料含有某種溶劑,並可在高眞空狀 態下除氣。在此情況下較佳係將材料改質’例如藉烘烤或 曝露至光線,以使遮蔽材料交聯或以其他方式硬化。聚醯 亞胺爲一種可使用之遮蔽材料,且將容忍激射環境而不會 顯著降解。沉積亦可利用化學蒸氣沉積(CVD)或電子束方 法。此等方法比濺射需要較少眞空。對此等方法而言,可 使用傳統酚醛清漆光阻樹脂,可能使用若干中度交聯作用 。另一項考量是,對遮蔽材料之任何改質,以使其在眞空 下安定,均可能使其稍後在此方法中更難以移除。適當材 料與方法可由熟諳此藝者作選擇。 一種特佳方法是使用酚醛清漆光阻,按上述構圖,然後 藉加熱部份交聯。晶種層1050之沉積,係使用CVD進行。 圖10F係以頂部視圖説明圖10E中所述步驟之結果,並顯 示兩個開孔1042a與1042b在模板1040中,各開孔1042a與 1042b係個別從兩個接點墊片1008a與1008b (以虛線顯示)中 所結合之一個上方,延伸至兩個突出特徵1030a與1030b (以 虛線顯示)中所選定之一個。 圖10F亦説明在模板1040中,已個別經過開孔1042a與 1042b沉積之晶種層之兩個經構圖之軌跡1050a與1050b。爲 清楚説明起見,軌跡l〇50a與1050b係以影線網作出陰影顯示 ,但應清楚明瞭的是,此影線作成之陰影在此圖中並非表 示橫截面。 在圖10F中所示之各軌跡1050a與1050b個別具有底端1052a -45- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -.---- - τι - I (請先閲讀背面之注意事項再填寫本頁) 訂 473562 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(43 ) 與1052b,頂端1054a與1054b,及中央主體部份1056a與1056b ,係個別相應於接點結構(1060)底端(1062)、頂端(1064)及主 體部份(1066),其將被建立在導電軌跡1050a與l〇5〇b上。軌 跡1050a與1050b之傾斜區域1053a與1053b,係個別示於此圖 中 〇 圖10G係説明此方法之下一步驟,其中陰影罩蓋1040已被 移除,並藉由譬如鍍敷(例如電鍍),建立多個(示出多個 中之一)接點結構1060,在多個(示出多個中之一)軌跡1030 上作爲導電性材料之團塊。各接點結構1060具有一個底端 部份1062 (比較圖3B之302),一個頂端部份1064 (比較圖3B 之304)及一個主體部份1066 (比較圖3B之306),在底端部份 1062與頂端部份1064之間延伸。如所示,接點結構1060具 有傾斜區域1063,介於其底端1062與其主體部份1066之間 ,傾斜區域1063係建立在晶種層1050之傾斜區域1053上, 其依次建立在遮蔽材料1020中之開孔1022之傾斜區域1023 上。 圖10H爲圖10G電子組件在線條10H-10H上所取得之橫截面 圖,説明根據本發明一項較佳實施例所製成接點結構(1060) 之剖面(橫截面)。此剖面大致上爲半圓形或蕈狀物形。經 過主體部份1066取得之此截面,係爲接點結構在整個長度 上剖面之代表例。此結構爲在外露晶種層上電鍍之結果, 該晶種層大部份約爲平面狀。 參考圖10G (亦參閲圖10L),所形成接點結構1060之整體 高度”H”,換言之,爲其頂端1064距離基材表面1002之高度 _-4fi-_ 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) ------:--*--衣-- (請先閲讀背面之注意事項再填寫本頁) 訂 473562 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明(44 ,較佳爲至少約4.0密爾,並可爲約8〇密爾或較大。 參考圖10H,主體部份1066之厚度&quot;t&quot;,換言之,爲在轨跡 1050上之導電性材料團塊之厚度,較佳爲至少約〇5密爾 ,並可爲約1.5密爾或較大。 參考圖10Η,主體部份祕之寬度&quot;w&quot;,換言之,爲在軌 跡1050上之導電性材料團塊之寬度&quot;w&quot;,較佳爲至少約〇 $ 密爾,並可爲約4.0密爾或較大。在.一較佳具體實施例中·, 沿著主體部份讓之寬度大約不變。在一特佳具體實施例 中主P卩伤在寬度上爲推拔狀,例如從主體部份1〇66之 接近底端1064處較寬,至接近頂端忉砧處較窄。 如上又所述,在所形成微電予接點結構(1〇6〇)之底端(ι〇62) 與頂端(滿句間之長度&quot;L&quot;,係適#地爲至少約ι〇密爾,並 可長達約50密爾或較大,甚至遠爲更大。 自極爲一般性之透視圖觀看,在遮蔽材料中具有圖樣之 開孔’係構成-種成形物’於其中可沉積材料,並於稍後 經熱處理。對電鍍目的而言,較佳係按上述沉積晶種層。 此晶種層亦可被認爲是一種成形物,可於其上沉積材料, 並於稍後經熱處理。可將此材料藉一些其他方法,直接沉 積至開孔中’譬如經過罩蓋进射或其他沉積方法,極像關 於晶種層所述者,但使用適合後續熱處理之材料,並沉積 ^材料至可用於製造有用結構之厚度。此處再一次,於遮 故材料中(開孔,係形成一種成形物,界定最後所形成結 構之形狀,達顯著程度。 關於彈簧形狀設計之-般要求條件,係爲此項技藝中一 本紙張尺中國國家標準(CNS) ---- ------.--J---- (請先閱讀背面之注意事項再填寫本頁) 訂 473562 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(45 ) 般已知的。譬如尺寸、彎曲力矩、形狀以允許在不同尺寸 中之撓性等細節,可由設計者加以選擇,並根據本發明之 陳述内容施行。一種特佳形狀係大致上接近圓形截面,具 有推拔狀内部與外部曲率半徑。此種形狀係示於圖11 (參 考資料〇9/〇32,473揭示内容之圖7)中。 圖101與10J爲圖10G接點結構1060之許多可能型態其中兩 種之透視圖,爲清楚説明起見,與組件1〇〇〇分離。此等圖 形係説明可使用本發明加以選擇之兩種重要變型。在圖101 中,接點結構具有方形底端1062。在圖10J中,接點結構具 有圓形(環形)底端1062。在此兩圖中,傾斜區域1063中底 端之漏斗形狀,係易於明瞭,該形狀已藉由遮蔽層1020中 開孔1022之傾斜側壁(1023)而被賦予底端。在圖10J中,底 端1062之傾斜區域1063係被完全涵蓋(360°),且小”唇部''係 延伸環繞整個底端。此完整漏斗形狀易於使用模板1040獲 得,其允許沿著遮蔽層1020之所有側壁及一部份表面,沉 積晶種層。圖101顯示僅在開孔1022之一部份側壁上沉積晶 種層之結果。這可容易地使用覆蓋一部份開孔1022之模板 獲得,如圖10E中所示。或多或少之側壁可根據所選擇之 罩蓋與沉積條件覆蓋。這可包括只有一個側壁之一部份, 整個侧壁,如圖101中所示者,超過一個侧壁之一部份(較 佳具體實施例),或所有側壁區域,如圖10J中所示者,以 形成完整漏斗(特佳具體實施例)。鍍敷後所形成之結構, 係在圖10G中以橫截面顯示。若基底爲方形,則圖10G之透 視圖可類似圖101中所示之視圖。 _-48- 本紙張尺度適用中國國家標準(CNS ) A4規格(2丨0X297公釐) ------.--^---- (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印裝 473562 A7 B7 五、發明説明(46 ) 爲便於説明起見,頂部平面圖10F與10K顯示完整漏斗具 體實施例,替代圖10E ' 10G及10L之詳細橫截面之部份漏 斗具體實施例。熟諳此藝者將明瞭圖10F與10K可稍微修?文 ,以相應於圖10E、10G及10L之特殊具體實施例。所形成 之結構係類似圖101中所示之部份漏斗,具有如圖10J中所 示之圓形基底。 圖10K爲圖10G電子组件之頂部平面圖,説明多個接點結 構中之兩個1060a與1060b,各接點結構1060a與1060b係與兩 個接點墊片l〇〇8a與1008b (以虛線顯示)之一結合。接點結構 1060a與1060b各具有個別之底端1062a與1062b,頂端1064a與 1064b,及中央主體部份1066a與1066b。接點結構1060a與 1060b之傾斜區域1063a與1063b,係個別示於此圖中。 正如在圖10K中所顯見者,所形成之接點結構係經適當 地推拔(寬度方向),個別在其底端1062a與1062b處較寬,至 頂端1064a與1064b處較窄,呈相當於前文所提及之08/852,152 申請案中所説明與描述之推拔狀接點結構之方式。爲清楚 説明起見,接點結構1060a與1060b係以雙重影線作成之陰影 表示,但應清楚地明瞭,此雙重影線作成之陰影,在此圖 中並非表示橫截面。 正如可自圖10G之説明而明白的,底端部份1062,因此是 整個接點結構1060,係經由晶種層1050與導電層1010,電 連接至電子組件之接點墊片1008之一個經結合者。正如亦 可自上文提出之説明而明白的,電子組件之一組接點塾片 1008,可藉由導電層1010而彼此短路,以幫助藉由電鍍方 _-49- 本紙張尺度適用中國國家標隼(CNS ) A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁) '?τ 473562 經濟部中央標準局員工消費合作社印製 A7 B7五、發明説明(47 ) 法建立接點結構1060。 在此方法之最後加工處理步驟中,可將遮蔽層1020移除 ,譬如以適當溶劑將其洗離。例如,光阻之遮蔽層1020可 以丙酮選擇性地洗離,而不會不利地影嚮上述之其他構件 。及最後,未被另一種材料(意即,被晶種層1050)覆蓋之 導電層1010之所有部份,可使用適當化學物質選擇性地蝕 離0 圖10L與10M係個別以橫截面與透視圖,説明無支撑接點 結構1060之最後產物,在其底端1062處連接至電子組件, 其主體部份1066位於遠離電子組件1002之表面,及其頂端 部份1064具有一種表面形態,自主體部份1066之階層延伸 得更遠。所形成接點結構1060之底端1062之傾斜區域1063 ,可清楚地在此等圖中,以及在下文所述之圖10N與100中 見及。 實質上,對各接點結構1060而言,係將導電性材料之細 長團塊沉積至遮蔽材料上,以具有底端1062,與底端相對 之頂端1064,及在底端1062與頂端1064間之主體部份1066。 在一較佳具體實施例中,主體部份1066係在一個平面上, 其較佳係大約平行於基材1002之表面,且其係偏離(在z-軸 上)底端1062。頂端1064,由於突出特徵1030之結果,係進 一步偏離主體部份1066。在將遮蔽材料1020移除時,所形 成之接點結構1060爲無支撑,藉其底端1062固定至基材 1002,其中頂端1064係爲自由的,以與另一個電子組件(例 如1072或1082,個別描述於下文)之末端(例如1070或1080)接 _-50- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印製 -51 - 473562 五、發明説明(48 ) 觸。 旦里座構之第三侗列蛊I體實施例 一種有用之回彈性接點結構,可藉其他材料沉積方法製 成,特別是直接沉積方法,譬如濺射、CVD、pv〇等。 f -替代具體實施例中種所要之形狀係由多種構件 界定參考圖1〇A至i〇d,開孔係被界定在遮蔽材料中,且 亦可加入突出構件,如上文詳述。這會形成—種成形物, 通當沉積物可於其上藉直接沉積方法製成。材料之塗敷可 以此員技藝中已知之多種方式加以控制。最簡單具體實施 例可能是使用罩蓋,譬如具有開孔1〇42之模板ι〇4〇,以限 制材料可沉積於何處,通常係如前文製備晶種層1〇5〇所述 &lt;万式。但是,適當沉積材料可經選擇,以允許沉積適當 厚度t最初成形沉積物’以連續進行熱處理程序,如上文 詳述。 應注意的是,在濺射厚膜時,最後完成配件之剖面,將 受此項技藝中所明瞭之許多變數所影嚮。一般而言,完全 激射配件之剖面,將與鍍敷配件之剖面不同,後者嬖如在 圖10H中所示者。實際剖面將反映出沉積條件,其包括沉 知%序之方向性。在高度定向沉積方法中,其剖面大致上 爲矩形。當材料以大致上類似之速率越過模板1040中之開 孔1〇42建立,並持續以大致上一致之寬度及大致上—致之 厚度蓄積時,經濺射之配件易於具有較具矩形之橫截面。 準直爲一種用以獲得高度定向沉積方法之技術。若沉積方 法並非極具定向性,則此沉積方法易於獲得較具圓形沉積 本紙張尺度適用中國國家檩準(CNS )人4規格(2丨〇&gt;&lt;297公釐) -----^------- (請先閲讀背面之注意事項再填寫本頁) 、?τ 473562 A7 B7 五、發明説明(49 ) 物。此等參數係爲此項技藝中所明瞭。橫截面幾何形狀可 合理且良好地預測,而且罩蓋與方法可經選擇或修正,以 獲得適當橫截面。在製造回彈性接觸器之過程中,配件之 剖面會衝擊彈力行爲,因此剖面可在設計所要之彈簧形狀 時加以考量。此種彈簧之設計係良好地在機械工程技藝之 技術範園内。 材料與方法 以一種相當於08/852,152申請案之方式,本發明之接點結 構係主要地較佳爲完全金屬性,並可形成(製成)多層結構 。對本發明熱處理之目的而言,上文詳述之合金與添加劑 係爲較佳的。供此結構各種其他組件用之適當材料,包括 但不限於:鎳,及其合金;銅、姑、鐵,及其合金;金( 尤其是硬金)與銀,此兩者均顯示優越運送電流能力及良 好接觸電阻率特性;鉑族元素;貴金屬;半貴金屬及其合 金,特別是鈀族元素及其合金;及鎢、鉬,以及其他耐火 金屬,及其合金。使用鎳與鎳合金係爲特佳的。 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 用以沉積供導電層(例如1010)、晶種層(例如1050)及接點 結構(例如1060)用之材料之適當方法,包括但不限於:涉 及沉積來自水溶液之材料之各種方法;電解鍍敷;無電鍍 敷;濺射;化學蒸氣沉積(CVD);物理蒸氣沉積(PVD);造 成材料經過所引致之液體或固體先質分解而沉積之方法等 ,所有此等沉積材料之技術均爲一般所習知。 導電層用之適當材料包括鈦-鎢(Ti-W),其可藉濺射沉積 至3000-6000 A之厚度,譬如至4500 A之厚度。一種選用但較 _-52- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 473562 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明(5〇 ) 佳係被加入導電層中者,係爲金層,其可被沉積至2500-4500 A之厚度,例如3500 A厚。導電層之一項重要的目,係 爲提供電連接至導電軌跡,以達成利用電鍍程序以沉積導 電性材料團塊之目的,其將在晶種層上變成所形成之接點 結構。但是,在一較佳具體實施例中,係將導電層省略。 另一種方法,譬如無電鍍敷,可用以沉積導電性材料團塊 ,其將變成所形成之接點結構。又另一種方法,譬如濺射 ,可用以沉積導電性材料團塊。 晶種層可爲例如金(Au),其可藉濺射沉積至約2500-4000 A 之厚度。在另一項較佳具體實施例中,晶種層爲銅(Cu), 其可藉濺射沉積至約1000-3000 A之厚度。或者,晶種層可 爲另一種適當材料,可於其上沉積所形成接點結構之團塊 。此種材料包括鋁,Ti-W,譬如關於導電層所述者,鈀油 墨及石墨油墨。 應注意的是,在某些型態中之晶種層可爲細長構件。亦 應注意的是,其他細長構件,譬如矽,可以使用。呈微切 削軸形式之矽,如在MEMS應用中所使用者,係爲一種可 使用之實例。 遮蔽材料(例如1020)用之適當材料,包括多種石印光阻 、酿·搭清漆樹脂及聚酿亞胺。 順應性與回彈性 圖10N係説明一種情況,其中係期望在接點結構1060之頂 端1064與另一種電子组件1072 (譬如印刷電路板(PCB))之接 點墊片1070之間製造壓力接點連接。於此情況中,接點結 _-53-_ 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -----L--^---- (請先閲讀背面之注意事項再填寫本頁) 訂 2 6 5 3 7 A7 B7 五、發明説明(51 ) 構1060應在”z-轴&quot;上回彈性地(意即,彈性地,而非塑性地) 反應,該z-軸係垂直(以九十度)於基材1002之表面。下述 即爲此種情況,例如一般期望在基材1002與電子組件1072 之間製造可接插、可易於移除之接頭。 圖100係説明一種情況,其中係期望較永久性地連接, 譬如使用軟焊料1084,使接點結構1060之頂端1064連接至 另一種電子組件1082 (比較1072)譬如印刷電路板(PCB)之接 點墊片1080 (比較1070)。於此情況中,接點結構1060應在&quot;X-軸&quot;及/或&quot;y-轴”順應性地反應,該兩轴係平行於基材1002 之表面。下述即爲此種情況,其中期望調節兩種電子組件 間熱膨脹係數上之差異。 接點結構(1060)可藉由在任何或所有X-、y-及z-軸上回彈 性地及/或順應性地偏斜,以對外力產生反應。由於熱處 理所造成之經改良材料性質,可加以利用以在各軸上提供 有用之回彈性。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 此種回彈性接點結構可藉由加入其他組件而被加強。共 待審,共同歸屬之美國專利申請案序號08/819,464,其標題 爲&quot;微電子互連元件用之接點頂端結構及其製法&quot;,及其相 應之PCT申請案序號PCT/US97/08606,1997年11月20日公告爲 WO 97/43653,係描述一種在犧牲性基材上界定頂端結構及 轉移此結構至電子組件之方法。此頂端結構可使用該申請 案中所述之技術,轉移至圖10L之結構。 利用本發明以及本發明較佳具體實施例之裝置與方法之 一般説明,已於上文提出。熟諳此藝者將明瞭且能夠在上 _- -_ 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 473562 A7 B7 五、發明説明(52 ) 述裝置與方法之許多方面實施許多改變,包括落在本發明 陳述内容中之變型。本發明之精神與範圍應僅受限於下述 申請專利範圍中所提出者。 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 _-55- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)From a very general perspective, the patterned openings in the masking material constitute a shaped object in which the material can be deposited and then heat treated later. For electric boat purposes, the seed layer is preferably deposited as described above. This seed layer can also be thought of as a shaped article on which material can be deposited and then heat treated later. The material can be deposited directly into the openings by some other methods, such as through cap sputtering, or other deposition methods, much like those described for the seed layer, but using materials suitable for subsequent heat treatment, and depositing this material to be used for Create useful structure thickness. Here again, the openings in the shielding material form a shaped object that defines the shape of the resulting structure to a significant degree. The second enumerated specific embodiment of the raw contact structure. The method described above with reference to FIGS. 9A-9C uses three layers (904, 906, 908) of masking material, which must be patterned and coated on each other. As a result, a multilayer trench is formed, in which material 920 can be deposited. The Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs has printed a comparable contact structure, which can be made with fewer layers of shielding material (such as photoresist). As mentioned previously, this is particularly useful for microelectronic applications. Figure 10A-10L illustrates a specific embodiment of the technology of the present invention. These figures and accompanying descriptions are taken from the co-pending, jointly-owned US patent application serial number 09 / 032,473, which was filed on February 26, 1998, and its title is "Define Microelectronic Connections with Lithographs" Point structure ", see also the corresponding PCT application PCT / US98 / 09999 filed on May 14, 1998. FIG. 10A shows an example electronic component on which multiple contact structures can be fabricated. In the main content below, the manufacture of a single contact structure (1060) will be described as an example of manufacturing multiple such contact structures, preferably all 473562 printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. Preparation A7 B7 V. Description of the invention (35) Simultaneously on the same electronic component or substrate. Typically, the contact structures manufactured on a single component will be substantially the same as each other (meaning size, shape, etc.), but using techniques known in the art, the size and shape of each contact structure can be individually Control, and the designer decides on the requirements of the specific application. In this preferred embodiment, the electronic component is a semiconductor device, which includes a silicon substrate 1002 and a passivation layer 1004 (for example, polyimide, about 4 microns thick), which is configured on the surface of the silicon substrate 1002, And a plurality of (one of the plurality shown) openings 1006 extend through the passivation layer 1004 to the metal contact pad 1008. Typically, there are multiple such contact pads on an electronic component. In previous techniques, within a complete assembly, each contact pad was typically connected (eg, as with a bonded wire) to a corresponding contact pad on another electronic component (not shown), which another Electronic components such as leadframes, and eventually thin and small profile packages (TSOP). Here, as shown in FIG. 10A, in the first step of this method, a conductive layer 1010 is deposited. The conductive layer 1010 is, for example, titanium-tungsten (Ti-W), which can be deposited to a thickness of about 3000-6000 A (Angstroms) by sputtering, for example, to a thickness of about 4500 A. The conductive layer 1010 substantially conforms to and adjoins the surface of the passivation layer 1004, the side wall of the opening 1006 and the exposed surface of the metal contact pad 1008 (within the opening 1006). The conductive layer 1010 is preferably conductive, and if it is deposited as a continuous "coating" layer, an electrical short will be formed with all the contact pads (1008) of the electronic component. As will be understood from the description below This kind of short-circuiting feature of the conductive layer 1010 can be advantageously used to establish an appropriate potential for the power supply decompression process (such as electroplating) to make contacts on electronic components. _-2ft-_ This paper size is applicable to China Standard (CNS) A4 specification (210X297 mm) (Please read the notes on the back before filling this page) 473562 A7 B7 V. Description of the invention (36) Structure. In a preferred embodiment, the conductive layer 1010 has The pattern is not continuous and can be deposited as multiple non-contiguous areas. In another preferred embodiment, the conductive layer 1010 covers the exposed surface of the end 1008. In an alternative embodiment, the conductive layer 1010 only covers Part of the terminal 1008. In another alternative embodiment, the conductive layer 1010 does not cover the terminal 1008 at all, but is close to the terminal 1008 so that when the seed layer 1050 is applied, it is connected to the conductive layer 1010. In a preferred embodiment, a second conductive layer of another material (such as gold) can be deposited and patterned on the conductive layer 1010. This can be used, for example, to achieve local interconnects, and signal slave connections. The spot gasket 1008 changes the path to the contact structure (1060). In general, the double layer may be better for many applications. The choice of appropriate materials is within the technical scope of this skill. The Central Consumers Bureau of the Ministry of Economic Affairs Consumer Cooperatives Printed (Please read the precautions on the back before filling this page) In a preferred embodiment, the contact pad (1008) is on the surface of the substrate (1002), or on the surface of the substrate itself ( (Exposed), but without a passivation layer (1004), but the passivation layer is usually present on the semiconductor device. Before the conductive layer 1010 is deposited, the passivation layer 1004 (if one exists) may be roughened as appropriate. To enhance the adhesion of the conductive layer 1010 to the passivation layer 1004. This can be achieved simply by exposing the electronic component to an oxygen (02) plasma, using appropriate parameters (which can be easily determined by the skilled person) In The desired surface structure is obtained on the passivation layer. The choice of material will also affect the adhesion of the seed layer to the passivation layer. For example, known as Ti-W or copper, it will adhere well to Polyurethane As shown in Figure 10B, in the next step of this method, a layer is covered. _-39-_ This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) 473562 A7 B7 Central Ministry of Economic Affairs Printed by the Consumer Bureau of the Standards Bureau. 5. Description of the invention (37) A masking material (such as photoresist) 1020 is deposited on the surface of the component 1002 (that is, onto the conductive layer 1010) and patterned (for example, using conventional light lithography). Technique) to join the opening 1022 and extend completely through the shielding layer 1020. The opening 1022 may be located at a position covering the opening 1006 in the passivation layer 1004 (as shown), or may be located far away from the hole 1006, and thus away from the contact pad 1008. As described above, and as described in more detail in the disclosure of reference 09 / 032,473, by positioning the opening 1022 away from the contact pad 1008, multiple contact structures can be fabricated on the electronic component, which The layout is different from that of the contact pads of electronic components. A particularly good form is to locate the openings 1022, so the contact structure established thereon will have a tip in an area array equivalent to a typical ball grid array. The openings can be connected to contact pads on the electronic component, arranged as, for example, surrounding pads. A contact structure that is substantially the same as a contact pad without displacement can be advantageously manufactured. In this case, it is useful to position the openings 1022 in an area array corresponding to the tip array of the last contact structure. Each opening 1022 preferably has a larger area than the area of the opening 1006 above the contact pad 1008. For example, a square contact pad 1008 with a size of 4 mils x 4 mils (meaning 100 micrometers x 100 micrometers) has a square opening 1022 with an exposed area of 10,000 square micrometers and a size of 200 micrometers x 200 micrometers. It has an area of 40,000 (four times the exposed area of the contact pad 1008). A circular opening 1022 having a diameter of 200 micrometers has an area of 31,400 square micrometers (approximately three times the exposed area of the contact cymbal 1008). Generally speaking, the opening is preferably an area exposing a terminal and / or substrate between about 10,000 and about 40,000 square microns, and most preferably more than about 30,000 square microns. Although the following is not this issue-=-40-_ This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) (Please read the precautions on the back before filling this page) 473562 A7 Central Bureau of Standards, Ministry of Economic Affairs Printed by employee consumer cooperatives B7 V. Main features of the invention description (38), but as a general proposal, the foot area (bottom area) of the contact structure should provide enough area for mechanical fixing (adhesion) of the contact structure to Electronic components. With regard to the opening 1022, it is preferably a push-out shape, and the size at the bottom of the push-out opening is, for a square opening, a spectrum of 200 microns by 200 microns, or for a circular opening, It is 200 microns in diameter. In applications where space is limited and such dimensions are not possible, the available space can be used. For example, when processing an electronic component having a 100 micron x 100 micron spacer on a 125 micron center, the opening 1022 may have dimensions of approximately 105 micron x 105 micron, 110 micron x 110 micron, etc., including non-square dimensions. Alternatively, in applications where space is limited, the bottom of the contact structure can be located away from the pads with which it is electrically connected, and has a larger (eg, 200 micron) preferred size. The push-shaped (inclined) area of the opening 1022 is designated as reference number 1023 in FIG. 10B. The shielding layer 1020 is preferably deposited to a thickness of at least about 50 microns, or to a thickness of at least about 100 microns, at least about 150 microns, and at least about 200 microns. The shielding layer 1020 may be deposited in multiple layers. What will determine the distance between the main part of the contact structure and the surface of the electronic component is mainly the overall thickness of the shielding layer 1020. Note the offset distance &quot; d2 &quot; between the main body portion 1066 and the base portion 1062 of the spring contact member 1060 shown in FIG. 10L. The side wall (side wall) of the opening 1022 is preferably push-shaped, so the opening may be larger at the surface of the shielding layer 1020 than at the conductive layer 1010. This is called &quot; positive &quot; push. No push will result in a steep side wall with a 90 ° angle. The open side wall preferably has an average push angle of about 60-75 °. This can easily use photoresist for shielding The material of layer 1020 is achieved by baking the photoresist and reflowing it. _-41 -_ This paper size applies to China National Standard (CNS) A4 specification (210X 297 mm) (Please read the precautions on the back first (Fill in this page again) 473562 A7 Printed B7 by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (39) The person who is most familiar with the relevant arts of the present invention, understands the explanation provided in the disclosure of reference material 09 / 032,473 Later, you will immediately learn how to control the push-out of the side wall. Push-out openings can be formed in any suitable way and can be stepped, in fact, like an inverted stepped truncated pyramid. Control the openings in the shielding layer (1020) ( The shape of 1022) is discussed in more detail in the disclosure of 09 / 032,473. Figure 10C is a top plan view of the electronic component of Figure 10B, showing two openings 1022a and 1022b in the shielding layer 1020. Contact pad 1008a and 1008b (shown in dashed lines) are combined. The push-out areas of the openings 1022a and 1022b are individually referenced in this figure with reference numerals 1023a and 1023b as shown in FIG. 10D. In this method, In the next step, for each selected one of the plurality of openings 1022, a protruding feature 1030 may be deposited on the surface of the shielding layer 1020, the center of which is at a distance "L" from the center of the opening 1022. As will be understood, this feature 1030 will define the contact end (top) (1064) of the formed contact structure (1060) formed on the electronic component, and the distance &quot; L "means that it is made on the electronic component The linear distance between the base (1062) and the top (1064) of the contact structure (1060). The protruding feature 1030 may be a "dot" or "lump" of the material, for example, showing a flattened hemisphere. Useful and preferred features include a small amount of epoxy photoresist or the like, which can be suitably applied through a template or using conventional screen printing techniques. The protruding feature 1030 may also be a conductive material. Appropriate dimensions of the prominent features 1030 in the form of flattened hemispherical dots are about 5-15 mils (125-375 microns) in diameter and about 2 mils (50 microns) in height. In a preferred embodiment, this prominent feature can be eliminated. (_-42- This paper size applies to the Chinese National Standard (CNS) A4 specification (210 × 297 mm). (Please read the precautions on the back before filling in this page. ) Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 4/3562 V. Description of the invention (40, for example, less than about 5 mils wide), 炱 钤 慎 恋 M 丨 』丄 λ In another specific embodiment, it may It is wider (for example, greater than about 1S mil wide). For the punishment, its degree is preferably within the range of about 2 to 7.5 mils. As far as the earthen road is concerned, it is revealed in more detail in 09 / 032,473 The prominent features used in the content, in a broader sense, can be formed in different shapes, including various shapes of the heart, including ") spherical, and pyramidal, conical, or semi-circular. ® Conical or semi-circular , And cross-shaped generally familiar with this artist, after understanding what is described and explained in this article, he will immediately understand how to apply and control the shape of the prominent feature 1030. And template (not shown) to produce a prominent feature 'σ, using photoresist H, n to characterize 1030, where the template is at If appropriate, the photoresist can be soft-baked to release the prominent features from the template, and then the template is removed for hard baking. At the bottom (ship) and top (delete) of the formed microelectronic spring contact structure The distance, L ", may be, for example, in the range of about 10-face mils, and preferably in the range of about 10-50 mils. As shown in tf in FIG. 10E, in the step below this method, a template (shadow cover) 1040 can be arranged on the surface of the shielding layer 1020. The template 1040 has a plurality of openings 1042 (one of which is shown). As shown, the opening 1042 extends from the opening 1022 to the corresponding protruding feature 1030. The template 1040 may suitably be a thin (e.g., about 2 mil (50 microns) thick) stainless steel foil, which may be perforated or etched to have an opening 1042. The template 1040 can be any suitable material having any suitable thickness that will allow the seed layer 1050 to be deposited on the shielding material 1020 'to have a conductive trace pattern corresponding to the shape of the opening 1042. -43 Applicable to China Paper Standard (CNS) M specifications (2 丨 οχ297 mm) for each paper size H · ——-IJ I-1J-I (Please read the precautions on the back before filling this page) Order 473562 A7 B7 Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (41) Using a template 1040 placed on the surface of the shielding layer 1020, a "seed" layer 1050 is deposited on the shielding layer 1020 and The protruding features 1030 are on the exposed surface. The seed layer 1050 is deposited in the exposed portion of the opening 1022 and on the surface of the conductive layer 1010 in the opening 1022. The seed layer 1050 has an inclined region 1053, which is deposited on the inclined region 1023 of the opening 1022 in the shielding material 1020. An alternative embodiment of such a 1050 seed layer is deposited by screen printing conductive ink. Suitable conductive inks include face inks or graphite inks. Such materials and methods are used in the manufacture of printed circuit boards and are well known in the art. This seed layer can be thought of as a shaped object on which material is later deposited to form the structure of the present invention. From another perspective, this patterned seed layer is an elongated component that can be coated to form the structure of the present invention. From yet another perspective view, the surface of the shielding material 1020 and the opening 1022 is a shaped object, which is suitable for direct deposition by a method such as sputtered bulk material, which is suitable for the heat treatment of the present invention. This deposition can be appropriately masked and patterned by deposition. The seed layer 1050 can be deposited into a pattern with many "tracks", each of which is a physical writing of a pattern of holes 1042 in the overlying template 1040. The seed layer 1050, after being patterned, acts as a precursor to the contact structure to be fabricated on the electronic component. For example, in the electroplating method, each of the conductive trajectories of the seed layer 1050 will be charged as an electrical formation, so that a substance (lump) of the contact structure (1060) can be manufactured thereon. The selection of the masking material 1020 and the method of depositing the seed layer 1050 must be _-44- This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page) € robe. Order 473562 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (42) Consider together. The shielding material must be stable in the environment of the deposition method. For example, a typical positive type photoresist material contains a solvent and can be degassed in a high airspace state. In this case, it is preferable to modify the material ', for example, by baking or exposing it to light to crosslink or otherwise harden the shielding material. Polyimide is a usable shielding material and will tolerate lasing environments without significant degradation. Deposition can also be performed by chemical vapor deposition (CVD) or electron beam methods. These methods require less airspace than sputtering. For these methods, conventional novolak photoresist resins can be used, and some moderate crosslinking may be used. Another consideration is that any modification of the masking material to make it stable in the air may make it more difficult to remove it later in this method. Appropriate materials and methods can be selected by those skilled in the art. A particularly good method is to use a novolac photoresist, pattern it as described above, and then cross-link it by heating it. The seed layer 1050 is deposited using CVD. FIG. 10F illustrates the results of the steps described in FIG. 10E in a top view, and shows two openings 1042a and 1042b. In the template 1040, each of the openings 1042a and 1042b is taken from two contact pads 1008a and 1008b (using (Shown in dashed lines) above the combined one, extending to the selected one of the two prominent features 1030a and 1030b (shown in dashed lines). Figure 10F also illustrates the two patterned trajectories 1050a and 1050b of the seed layer that have been individually deposited through the openings 1042a and 1042b in the template 1040. For the sake of clarity, the trajectories 1050a and 1050b are shown by a hatched net, but it should be clear that the hatched shadows do not represent a cross section in this figure. The trajectories 1050a and 1050b shown in FIG. 10F each have a bottom end 1052a -45- This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -.-----τι-I (please first Read the notes on the back and fill in this page) Order 473562 Printed by the Consumer Standards Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs A7 B7 5. Invention Description (43) and 1052b, Top 1054a and 1054b, and Central Body Parts 1056a and 1056b are individual Corresponding to the bottom end (1062), the top end (1064) and the main body (1066) of the contact structure (1060), it will be established on the conductive tracks 1050a and 105b. The sloped areas 1053a and 1053b of the tracks 1050a and 1050b are shown individually in this figure. Figure 10G illustrates the next step of this method, in which the shadow cover 1040 has been removed, and by, for example, plating (such as plating) , A plurality of (one of the plurality is shown) contact structures 1060 are established, and a plurality of (one of the plurality is shown) tracks 1030 are used as a mass of conductive material. Each contact structure 1060 has a bottom portion 1062 (compared to 302 in FIG. 3B), a top portion 1064 (compared to 304 in FIG. 3B), and a main body portion 1066 (compared to 306 in FIG. 3B) at the bottom end The portion 1062 extends between the top portion 1064. As shown, the contact structure 1060 has an inclined region 1063 between its bottom end 1062 and its main portion 1066. The inclined region 1063 is established on the inclined region 1053 of the seed layer 1050, which is sequentially established on the shielding material 1020 On the inclined area 1023 of the opening 1022 in the middle. 10H is a cross-sectional view taken on the line 10H-10H of the electronic component of FIG. 10G, illustrating a cross-section (cross-section) of a contact structure (1060) made according to a preferred embodiment of the present invention. This section is roughly semi-circular or mushroom-shaped. This section obtained through the main body portion 1066 is a representative example of the section of the contact structure over the entire length. This structure is the result of electroplating on an exposed seed layer, and most of the seed layer is approximately planar. Referring to FIG. 10G (see also FIG. 10L), the overall height “H” of the contact structure 1060 is formed, in other words, the height of the top 1064 from the surface of the substrate 1002 _-4fi-_ This paper standard applies Chinese national standards ( CNS) A4 specification (210X 297 mm) ------:-*-clothing-(Please read the precautions on the back before filling out this page) Order 473562 A7 B7 Staff Consumer Cooperatives, Central Standards Bureau, Ministry of Economic Affairs Printed 5. Description of the invention (44, preferably at least about 4.0 mils, and may be about 80 mils or larger. Referring to FIG. 10H, the thickness of the main portion 1066 &quot; t &quot;, in other words, is in orbit The thickness of the mass of conductive material on the trace 1050 is preferably at least about 0.05 mils, and may be about 1.5 mils or more. Referring to FIG. 10 (a), the width of the main part &quot; w &quot;, in other words, For the width &quot; w &quot; of the mass of conductive material on track 1050, it is preferably at least about 0 mils, and may be about 4.0 mils or more. In a preferred embodiment, Keep the width approximately constant along the main body portion. In a particularly preferred embodiment, the main P sting is push-like in width. For example, it is wider from the main part 1066 near the bottom end 1064 to the top near the anvil and narrower. As mentioned above, at the bottom end of the microelectric pre-contact structure (1060) formed ( ι〇62) and the top (the length between the full sentences) is at least about mil, and can be up to about 50 mils or larger, or even much larger. Since very general When viewed from a perspective view, the openings in the masking material have a pattern of 'system composition-a shaped article' in which the material can be deposited and then heat treated later. For electroplating purposes, it is preferred to deposit the seeds as described above This seed layer can also be considered as a shaped object, on which material can be deposited and then heat treated later. This material can be deposited directly into the opening by some other method, such as through a cover Injection or other deposition methods, much like those described for the seed layer, but use materials suitable for subsequent heat treatment and deposit ^ materials to a thickness that can be used to make useful structures. Here again, in the opaque material (open A hole that forms a shaped object that defines the structure that is finally formed The shape has reached a significant level. The general requirements for the design of the spring shape are the Chinese National Standard (CNS) for a paper rule in this technique ---- ------.-- J ---- (Please read the notes on the back before filling out this page) Order 473562 Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (45) It is generally known. For example, the size, bending moment, and shape allow Details such as flexibility in dimensions can be selected by the designer and implemented in accordance with the statements of the present invention. A particularly good shape is a nearly circular cross-section with a push-like inner and outer radius of curvature. This shape is shown in Fig. 11 (Fig. 7 of the disclosure of reference material 09 / 32,473). Figures 101 and 10J are perspective views of two of the many possible forms of the contact structure 1060 of Figure 10G. For clarity, they are separated from the module 1000. These figures illustrate two important variations that can be selected using the present invention. In FIG. 101, the contact structure has a square bottom end 1062. In FIG. 10J, the contact structure has a circular (ring-shaped) bottom end 1062. In these two figures, the funnel shape of the bottom end in the inclined region 1063 is easy to understand, and the shape has been given to the bottom end by the inclined side wall (1023) of the opening 1022 in the shielding layer 1020. In Figure 10J, the sloped area 1063 of the bottom end 1062 is completely covered (360 °), and the small "lip" is extended around the entire bottom end. This complete funnel shape is easy to obtain using the template 1040, which allows shadowing along A seed layer is deposited on all sidewalls and a portion of the surface of layer 1020. Figure 101 shows the result of depositing a seed layer on only a portion of the sidewalls of the opening 1022. This can easily be used to cover a portion of the openings 1022 The template is obtained, as shown in FIG. 10E. More or less sidewalls can be covered according to the selected cover and deposition conditions. This can include only one part of the sidewall, the entire sidewall, as shown in FIG. 101 , More than one part of the side wall (the preferred embodiment), or all the side wall areas, as shown in FIG. 10J, to form a complete funnel (the best embodiment). The structure formed after plating, It is shown in cross-section in Figure 10G. If the base is square, the perspective view of Figure 10G can be similar to the view shown in Figure 101. _-48- This paper size applies Chinese National Standard (CNS) A4 specifications (2 丨0X297 mm) ------.-- ^ ---- (Please read first Note on the back, please fill in this page again.) Order printed by the Consumers Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 473562 A7 B7 V. Description of the invention (46) For the sake of convenience, the top plan views 10F and 10K show the specific embodiment of the complete funnel, instead of the figure 10E '10G and 10L detailed cross-section specific embodiment of the funnel. Those skilled in the art will understand that Figures 10F and 10K can be slightly modified? The text corresponds to the specific embodiments of Figures 10E, 10G and 10L. The structure is similar to a part of the funnel shown in Figure 101, with a circular base as shown in Figure 10J. Figure 10K is a top plan view of the electronic component of Figure 10G, illustrating two of the multiple contact structures 1060a and 1060b Each of the contact structures 1060a and 1060b is combined with one of two contact pads 1008a and 1008b (shown in dotted lines). The contact structures 1060a and 1060b each have individual bottom ends 1062a and 1062b, and the top ends 1064a and 1064a 1064b, and the central body portions 1066a and 1066b. The sloped areas 1063a and 1063b of the contact structures 1060a and 1060b are shown individually in this figure. As can be seen in Figure 10K, the formed contact structure is properly The ground push (width direction) is individually wider at the bottom ends 1062a and 1062b, and narrower at the top ends 1064a and 1064b, which are equivalent to the pushes explained and described in the 08 / 852,152 application mentioned above. For the sake of clarity, the contact structures 1060a and 1060b are represented by double shadows, but it should be clearly understood that the shadows made by this double shadow are not horizontal. section. As can be understood from the description of FIG. 10G, the bottom portion 1062, and thus the entire contact structure 1060, is electrically connected to the contact pad 1008 of the electronic component via the seed layer 1050 and the conductive layer 1010. Combiner. As can also be understood from the explanations provided above, a group of contact pads 1008 of an electronic component can be short-circuited to each other by the conductive layer 1010 to help the electroplating party. Standard (CNS) A4 specification (210X297 mm) (Please read the notes on the back before filling this page) '? Τ 473562 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (47) Law establishment Contact structure 1060. In the final processing step of this method, the masking layer 1020 can be removed, for example, it can be washed away with a suitable solvent. For example, the photoresist shielding layer 1020 can be selectively washed away with acetone without adversely affecting the other components described above. And finally, all parts of the conductive layer 1010 that are not covered by another material (that is, covered by the seed layer 1050) can be selectively etched using appropriate chemicals. Figures 10L and 10M are shown in cross section and perspective individually. The figure illustrates the final product of the unsupported contact structure 1060, which is connected to the electronic component at its bottom end 1062, its main body portion 1066 is located on the surface away from the electronic component 1002, and its top portion 1064 has a surface shape from the main body Part of the 1066 hierarchy extends further. The sloped area 1063 of the bottom end 1062 of the formed contact structure 1060 can be clearly seen in these figures, as well as in FIGS. 10N and 100 described below. In essence, for each contact structure 1060, an elongated mass of conductive material is deposited on the shielding material to have a bottom end 1062, a top end 1064 opposite the bottom end, and a space between the bottom end 1062 and the top end 1064. The main part 1066. In a preferred embodiment, the main body portion 1066 is on a plane, which is preferably approximately parallel to the surface of the substrate 1002, and is offset (in the z-axis) from the bottom end 1062. The top end 1064 is further deviated from the main body part 1066 due to the protruding feature 1030. When the shielding material 1020 is removed, the formed contact structure 1060 is unsupported and is fixed to the substrate 1002 by its bottom end 1062. The top end 1064 is free to connect with another electronic component (such as 1072 or 1082). , Individually described below) at the end (such as 1070 or 1080) of _-50- This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm) (Please read the precautions on the back before filling this page) Order Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs -51-473562 V. Description of Invention (48) Touch. Example of the Third Array of Denier Structures A useful resilient contact structure can be made by other material deposition methods, especially direct deposition methods, such as sputtering, CVD, pv0, etc. f-In the alternative embodiment, the desired shape is defined by multiple members. Referring to Figures 10A to 10d, the openings are defined in the shielding material, and protruding members can also be added, as described in detail above. This will form a shaped object on which the deposit can be made by a direct deposition method. Material application can be controlled in a number of ways known in the art. The simplest specific embodiment may be the use of a cover, such as a template with an opening 1042, to limit where the material can be deposited, usually as described in the above-mentioned preparation of the seed layer 1050. &lt; Manshi. However, a suitable deposition material may be selected to allow the deposition of the initially formed deposit &apos; to a suitable thickness t for continuous heat treatment procedures, as detailed above. It should be noted that when thick films are sputtered, the final profile of the accessory will be affected by many variables known in the art. In general, the cross-section of a fully lasing accessory will differ from the cross-section of a plating accessory, as shown in Figure 10H. The actual profile will reflect the deposition conditions, including the directionality of the known% sequence. In the highly directional deposition method, the cross section is substantially rectangular. When the material is established at a substantially similar rate across the opening 1042 in the template 1040, and continues to accumulate with a substantially uniform width and approximately the same thickness, the sputtered accessory tends to have a rectangular cross-section. section. Collimation is a technique used to obtain highly oriented deposition methods. If the deposition method is not very directional, this deposition method is easy to obtain a more circular deposition. The paper size is applicable to China National Standards (CNS) Standard 4 (2 丨 〇 &gt; &lt; 297 mm) ----- ^ ------- (Please read the notes on the back before filling this page),? τ 473562 A7 B7 V. Description of the invention (49). These parameters are known in the art. Cross-section geometry can be reasonably and well predicted, and covers and methods can be selected or modified to obtain the appropriate cross-section. In the process of manufacturing the resilient contactor, the cross section of the accessory will impact the elastic behavior, so the cross section can be considered when designing the desired spring shape. The design of this spring is well within the technical park of mechanical engineering skills. Materials and Methods In a manner equivalent to the 08 / 852,152 application, the contact structure of the present invention is mainly preferably completely metallic, and can form (made) a multilayer structure. For the purpose of the heat treatment of the present invention, the alloys and additives detailed above are preferred. Suitable materials for various other components of this structure, including but not limited to: nickel, and its alloys; copper, iron, iron, and their alloys; gold (especially hard gold) and silver, both of which show superior transport current Ability and good contact resistivity characteristics; platinum group elements; precious metals; semi-precious metals and their alloys, especially palladium group elements and their alloys; and tungsten, molybdenum, and other refractory metals and their alloys. The use of nickel and nickel alloys is particularly preferred. Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the notes on the back before filling this page) for deposition of conductive layers (such as 1010), seed layers (such as 1050) and contact structures (such as 1060) Suitable methods of materials include, but are not limited to: various methods involving deposition of materials from aqueous solutions; electrolytic plating; electroless plating; sputtering; chemical vapor deposition (CVD); physical vapor deposition (PVD); All the methods for depositing liquid or solid precursors caused by decomposition are generally known. Suitable materials for the conductive layer include titanium-tungsten (Ti-W), which can be deposited by sputtering to a thickness of 3000-6000 A, such as a thickness of 4500 A. A choice but more than _-52- This paper size is applicable to Chinese National Standard (CNS) A4 specifications (210X297 mm) 473562 A7 B7 Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economy The conductive layer is a gold layer, which can be deposited to a thickness of 2500-4500 A, such as 3500 A. An important purpose of the conductive layer is to provide an electrical connection to the conductive tracks to achieve the purpose of depositing a clump of conductive material using an electroplating process, which will become a contact structure formed on the seed layer. However, in a preferred embodiment, the conductive layer is omitted. Another method, such as electroless plating, can be used to deposit clumps of conductive material that will become the contact structure formed. Yet another method, such as sputtering, can be used to deposit clumps of conductive material. The seed layer can be, for example, gold (Au), which can be deposited to a thickness of about 2500-4000 A by sputtering. In another preferred embodiment, the seed layer is copper (Cu), which can be deposited to a thickness of about 1000-3000 A by sputtering. Alternatively, the seed layer may be another suitable material on which agglomerates of the formed contact structures may be deposited. Such materials include aluminum, Ti-W, such as those mentioned for the conductive layer, palladium ink and graphite ink. It should be noted that the seed layer may be an elongated member in some forms. It should also be noted that other elongated members, such as silicon, can be used. Silicon in the form of a micro-cutting axis, as used in MEMS applications, is a useful example. Suitable materials for masking materials (such as 1020) include a variety of lithographic photoresists, varnishes, varnishes, and polyimines. Compliance and Resilience Figure 10N illustrates a situation where it is desired to make a pressure contact between the top 1064 of the contact structure 1060 and a contact pad 1070 of another electronic component 1072, such as a printed circuit board (PCB). connection. In this case, the contact point _-53-_ This paper size applies to China National Standard (CNS) A4 (210X297 mm) ----- L-^ ---- (Please read the note on the back first Please fill in this page again) Order 2 6 5 3 7 A7 B7 V. Description of the invention (51) The structure 1060 should respond elastically (that is, elastically, not plastically) on the "z-axis", which The z-axis is perpendicular (at ninety degrees) to the surface of the substrate 1002. The following is the case. For example, it is generally desirable to make a pluggable and easily removable connector between the substrate 1002 and the electronic component 1072. Figure 100 illustrates a situation where a more permanent connection is desired, such as the use of soft solder 1084 to connect the top 1064 of the contact structure 1060 to another electronic component 1082 (compare 1072) such as a printed circuit board (PCB). Contact pad 1080 (compare 1070). In this case, the contact structure 1060 should respond compliantly in the "X-axis" and / or "y-axis", the two axes being parallel to the substrate 1002 surface. This is the case where it is desirable to adjust the difference in coefficient of thermal expansion between the two electronic components. The contact structure (1060) can react to external forces by resiliently and / or compliantly deflecting on any or all of the X-, y-, and z-axes. The improved material properties due to heat treatment can be exploited to provide useful resilience on each axis. Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the notes on the back before filling out this page) This resilient contact structure can be enhanced by adding other components. Co-pending US patent application serial number 08 / 819,464, entitled "Top Structure of Contacts for Microelectronic Interconnect Components and Manufacturing Method", and its corresponding PCT application serial number PCT / US97 / 08606, published on November 20, 1997 as WO 97/43653, describes a method for defining a top structure on a sacrificial substrate and transferring this structure to an electronic component. This top structure can be transferred to the structure of Fig. 10L using the technique described in the application. A general description of the device and method utilizing the present invention and the preferred embodiments of the present invention has been presented above. Those skilled in this art will understand and be able to implement many of the above aspects of the paper size applicable to the Chinese National Standard (CNS) A4 (210X297 mm) 473562 A7 B7 5. Description of the Invention (52) Changes, including variations that fall within the description of the invention. The spirit and scope of the present invention should be limited only by those set forth in the following patent application scope. (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs _-55- This paper size applies to China National Standard (CNS) A4 (210X297 mm)

Claims (1)

1. 一種製造回彈性結構之方法,其包括以下步驟 ⑻形成一具有基底之細長構件, (b) 在細長構件上沉積塗層,而得經塗覆之細長構件, 此塗層包含至少一種金屬與至少一種添加劑,及 (c) 在高於該塗層吸收峰轉移溫度〇與丨5〇充内之温度 下’熱處理該經塗覆之細長構件’獲得具有經改良 材料性質之塗層; 其中該細長構件之基底係於步驟(b)之前或步驟(c)之後 附於電子基材的接點墊片上。 2. —種製造回彈性結構之方法,其包括以下步驟 ⑻形成一具有基底之細長構件, ⑸在細長構件上沉積塗層,而得經塗覆之細長構件, 此塗層包含至少一種金屬與至少一種添加劑, 此金屬包含一種選自包括鎳與姑之金屬,及至少 一種添加劑選自包括糖精與2- 丁块-1,4-二醇,及 (C)在高於該塗層吸收峰轉移溫度〇與丨5 〇 内之溫度 下’熱處理該經塗覆之細長構件,以增加該塗層之 降服強度; 其中該細長構件之基底係於步驟⑸之前或步驟(c)之後 附於電予基材的接點塾片上。 3. —種製造回彈性結構之方法,其包括以下步驟 ⑻形成一具有基底之細長構件, (b)在細長構件上沉積塗層作為亞穩塗層,而得經塗覆 之細長構件,此塗層包含至少一種金屬與至少一種 本紙張尺度適用中國國家標準(CNS) A4規格Ϊ210X 297公釐)1. A method of manufacturing a resilient structure, comprising the steps of: forming an elongated member having a base, (b) depositing a coating on the elongated member to obtain a coated elongated member, the coating comprising at least one metal With at least one additive, and (c) 'heat-treating the coated elongated member' at a temperature higher than the absorption peak transfer temperature of the coating by 0 and 50 ° to obtain a coating having improved material properties; wherein The substrate of the elongated member is attached to the contact pad of the electronic substrate before step (b) or after step (c). 2. A method of manufacturing a resilient structure, comprising the steps of: forming an elongated member having a base; and depositing a coating on the elongated member to obtain a coated elongated member, the coating comprising at least one metal and At least one additive, the metal comprising a metal selected from the group consisting of nickel and nickel, and at least one additive selected from the group consisting of saccharin and 2-butan-1,4-diol, and (C) above the absorption peak of the coating The heat treatment of the coated elongated member is performed at a temperature within a temperature range of 0 and 5 ° to increase the drop strength of the coating; wherein the substrate of the elongated member is attached to the electrode before step (i) or after step (c). Pre-contact pads on the substrate. 3. A method for manufacturing a resilient structure, comprising the steps of forming an elongated member with a base, (b) depositing a coating on the elongated member as a metastable coating to obtain the coated elongated member, The coating contains at least one metal and at least one paper size applicable to Chinese National Standard (CNS) A4 specifications (210X 297 mm) =:,,Γ少—種添加劑能夠與該至少-種金屬 ,高::塗層吸收導轉移溫度。與…内之溫度 引择:”塗覆之細長構件,以在亞穩塗層中 1發轉蜒,而得安定塗層。 4. -種製造回彈性結構之方法,其包括以 ⑻形成一具有基底之細長構件, 驟 ⑸在細長構件上沉積塗層作為毫微結晶性材料,而将 經塗覆(細長構件,此塗層包含至少一種金屬盘至 少一種添加劑,此至少一種添加劑能夠與該至少一 種金屬共沉積,及 ㈡在高於該塗層吸收峰轉移溫度〇與15〇它内之溫廣 下’熱處理該經塗覆之細長構件,以引發轉變而得 包含結晶性材料之塗層; 其中該細長構件之基底係於步驟(b)之前或步驟㈡之後 附於電子基材的接點墊片上。 5. 如申請專利範圍第丨,2, 3或4項之方法,其中細長構件包 括導線骨架。 6. 如申請專利範圍第5項之方法,其進一步包含具有接點 墊片之電子組件’其中導線骨架係連接至接點墊片, 其中電子組件可為半導體裝置,半導體封裝物,半導 體晶圓,用以接觸一或多種半導體裝置之電子裝置, 用以測試一或多種半導體裝置之電子裝置,探測插 件,探測物,連接器,插入物或套筒。 2- 本纸張尺度適用中國國家揉準(CNS) A4规格(210 X 297公釐) 〜VJ乙 A8 B8=: ,, Γ less—an additive can interact with the at least one metal, high :: coating absorption transfer temperature. And the temperature within: "the coated elongated member to turn in a metastable coating to obtain a stable coating. 4. A method of making a resilient structure, which includes forming a A slender member having a base, a coating is deposited on the slender member as a nanocrystalline material, and the coated (slender member, the coating contains at least one metal disc and at least one additive, and the at least one additive can interact with the Co-deposition of at least one metal, and 'heat-treating the coated elongated member at a temperature that is higher than the absorption peak transfer temperature of the coating between 0 and 15 ° to initiate transformation to obtain a coating comprising a crystalline material Wherein the base of the elongated member is attached to the contact pad of the electronic substrate before step (b) or after step ㈡. 5. If the method of the scope of patent application No. 丨, 2, 3 or 4 is applied, wherein the elongated member is The component includes a lead frame. 6. The method of claim 5 further includes an electronic component having a contact pad, wherein the lead frame is connected to the contact pad, and the electronic component may be Conductor devices, semiconductor packages, semiconductor wafers, electronic devices used to contact one or more semiconductor devices, electronic devices used to test one or more semiconductor devices, probe plugs, probes, connectors, inserts, or sleeves. 2- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ~ VJ B A8 B8 如申請專利範圍第1,2, 3或4項之方法 括犧牲性基材。 其中細長構件包 8,如申請專利範圍第u,3或4項之方法’其中細長構件包 括塗有材料晶種層以促進鍍敷之犧牲性基材。 9·如申請專利範圍第U,3或4項之方法,其中細長構件句 括金屬骨架。 其中塗層係藉電 1〇·如申請專利範圍第1,2, 3或4項之方法 鍍形成。 11.如申請專利範圍第丨,2, 3或4項之方法,其中沉積塗層之 万法係選自包括金屬之電鍍、化學蒸氣沉積(CVD)、物 理蒸氣沉積(PVD)、電解或無電水溶液鍍敷,及任何經 由氣體、液體或固體先質之分解或反應而造成材料沉 積之方法。 12.如申請專利範圍第丨,2, 3或4項之方法,其中塗層係足夠 厚’以致經熱處理之塗層係對該經塗覆之細長構件賦 予回彈性。 13. 如申請專利範圍第丨,3或4項之方法,其中該至少一種 金屬係包含一種選自包括鎳、鈷、鐵、铑、鈀、鎢、 銅、鉻、鈦、鋁、金及鉑之金屬。 14. 如申請專利範圍第1, 3或4項之方法,其中該至少一種 金屬包含一種選自包括鎳、鈷及鐵之金屬。 15. 如申請專利範圍第丨,2, 3或4項之方法,其進一步包括具 有含至少兩種金屬之材料之塗層,該兩種金屬係選自 包括 Ni-Co、Co-Mn、Ni-Mn、Pd-Au、Pd-Co、W-Co、Ti-N -3- _______* 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公董)For example, the method of claim 1, 2, 3 or 4 includes sacrificial substrates. Wherein the elongated member includes a method according to item u, 3 or 4 of the scope of the patent application, wherein the elongated member includes a sacrificial substrate coated with a seed layer of material to promote plating. 9. The method according to item U, 3 or 4 of the scope of patent application, wherein the elongated member includes a metal skeleton. Wherein the coating layer is formed by applying electricity according to the method of item 1, 2, 3 or 4 in the scope of patent application. 11. The method of claim 1, 2, 3 or 4, wherein the method of depositing the coating is selected from the group consisting of electroplating of metals, chemical vapor deposition (CVD), physical vapor deposition (PVD), electrolysis or electroless Aqueous solution plating, and any method of material deposition by decomposition or reaction of gas, liquid or solid precursors. 12. The method of claim 1, 2, 3 or 4, wherein the coating is thick enough 'so that the heat-treated coating imparts resilience to the coated elongated member. 13. The method of claim 1, 3 or 4, wherein the at least one metal system comprises one selected from the group consisting of nickel, cobalt, iron, rhodium, palladium, tungsten, copper, chromium, titanium, aluminum, gold, and platinum. Of metal. 14. The method of claim 1, 3 or 4, wherein the at least one metal comprises a metal selected from the group consisting of nickel, cobalt and iron. 15. The method of claim 1, 2, 3 or 4, further comprising a coating having a material containing at least two metals selected from the group consisting of Ni-Co, Co-Mn, Ni -Mn, Pd-Au, Pd-Co, W-Co, Ti-N -3- _______ * This paper size applies to China National Standard (CNS) A4 specifications (210X297 public director) 及 Ti-w。 16.如申凊專利範圍第丨,2, 3或*項之方法,其中塗層包含 Ni-Co合金。 I7·如申請專利範圍第1,2, 3或4項之方法,其進/步包括具 有含至少二種金屬之材料之塗層,該三種金屬係選自 包括 Ni-Co-Mn 與 Ni-W-B。 18·如申請專利範圍第1,2,3或4項之方法,其中该至少一種 添加劑係為相對較少成份。 19·如申請專利範圍第1,3或4項之方法’其中該至少一種 添加劑中之至少一種或其衍生物,能夠與該至少一種 金屬共沉積’且能夠在中度熱處理下與該至少一種金 屬共存’以組織塗層之結構’以提供該經蜜覆細長構 件降服強度上之增加。 20. 如申請專利範圍第丨,3或4項之方法,其中該至少一種 添加劑係包括含硫化合物。 21. 如申請專利範圍第丨,3或4項之方法,其中該至少一種 添加劑係選自包括糖精、蕃-三-橫酸^^TSA)、2- 丁块_ 1,4-二醇及硫脲》 22. 如申請專利範圍第2項之方法’其進一步包括使用鍍敷 浴以沈積塗層,其中至少一種添加劑為糖精,其在鍍 敷浴中之濃度係大於或等於20毫克/升。 23. 如申請專利範圍第2項之方法,其進—步包括使用鍍敷 浴以沉積塗層,其中至少一種添加劑為2_ 丁炔_丨,4_二 醇,其在鍍敷浴中之濃度係大於或等於5毫克/升。 -4- i紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 一 473562 A8 B8And Ti-w. 16. The method of claim 1, 2, 3 or *, wherein the coating comprises a Ni-Co alloy. I7. If the method of claim 1, 2, 3 or 4 is applied, the method further includes a coating having a material containing at least two metals selected from the group consisting of Ni-Co-Mn and Ni- WB. 18. The method according to claim 1, 2, 3 or 4, wherein the at least one additive is a relatively small component. 19. The method according to claim 1, 3, or 4 in which at least one of the at least one additive or a derivative thereof can be co-deposited with the at least one metal, and can be subjected to the at least one with moderate heat treatment Metals coexist in a 'structured coating structure' to provide an increase in the strength of the honeycomb elongated member. 20. The method of claim 1, 3 or 4, wherein the at least one additive comprises a sulfur-containing compound. 21. The method of claim 1, 3 or 4, wherein the at least one additive is selected from the group consisting of saccharin, tris-trans-acid ^ TSA), 2-butan-1, 4-diol and Thiourea 22. The method according to item 2 of the scope of patent application, which further comprises using a plating bath to deposit the coating, wherein at least one of the additives is saccharin, and the concentration in the plating bath is greater than or equal to 20 mg / liter . 23. The method according to item 2 of the patent application, further comprising using a plating bath to deposit the coating, wherein at least one of the additives is 2_butyne_4, diol, and its concentration in the plating bath Is greater than or equal to 5 mg / L. -4- i Paper size applies to Chinese National Standard (CNS) A4 (210X 297 mm)-473562 A8 B8 24.如申請專利範圍第丨,2, 3或 —種選自包括NiCl、NiBr、 之物質存在下,沉積塗層 4項之方法,其進一步包括在 種類1增白劑及種類2增白劑 25. 如申請專利範圍第丨2 3或 甘士么p 〜H馬又万法,其中塗層係在揭 觀結構上經歷放熱轉變,從較無組織化至較具组^t :態,其中放熱轉變具有尖辛溫度,且其中熱處理還 度係在尚於尖峰溫度or與高於1〇(rc之間。 26. 如申請專利範圍第i 2 3或4; 、 貞又万法,其中在熱處理; 驟之刖’該塗層包含非晶質材科。 27.如申請專利範圍第26項之方法, 層中造成轉變,以致使至少__ 有序材料。 其中熱處理步驟會在塗 部份非晶質材料轉變成24. If the scope of the patent application is No. 丨, 2, 3, or a method selected from the group consisting of 4 items in the presence of a substance including NiCl, NiBr, and further including a type 1 whitening agent and a type 2 whitening agent 25. For example, if the scope of patent application is No. 23 or Gan Shima p ~ H Mawanwanfa, in which the coating system undergoes an exothermic transition on the exposed structure, from a less organized to a more organized ^ t: state, where The exothermic transition has a sharp temperature, and the heat treatment degree is between the peak temperature or or higher than 10 (rc. 26. For example, the scope of patent application i 2 3 or 4; Heat treatment; 刖 之 'The coating contains an amorphous material. 27. If the method of the scope of application for the patent No. 26, the layer causes a transformation, so that at least __ ordered materials. The heat treatment step will be in the coating part Amorphous material transforms into 裝 28.如申請專利範圍第丨,2, 3或4项之方法 驟後,該塗層包含有序材料。 29·如申請專利範圍第込2, 3或4項之方法 驟之前’該塗層包含毫微結晶性材料 其中在熱處理步 其中在熱處理步 訂 30_如申請專利範圍第29項之方法, 塗層中顯著部份之毫微結晶性 料。 其中熱處理步驟會造成 材料轉變成結晶性材28. After the method of claim 2, 2, 3 or 4, the coating comprises an ordered material. 29. If the method of the scope of patent application item 込 2, 3 or 4 is used before the step, the coating contains nanocrystalline material, which is in the heat treatment step and in the heat treatment step. Nanocrystalline material in a significant portion of the layer. The heat treatment step will cause the material to change into a crystalline material. 具中在熱處ί] 31_如申請專利範圍第丨,2, 3或4項之方法 驟後’該塗層包含結晶性材料。一 32·如申請專利範圍第I 2, 3或4項之方沬甘 7次,具進一步包4 積塗層’以致使經塗覆之細長構件連接至較大 並包含回彈性電接點。 ’ ° $ -5- 申請專利範圍 A B c DIn the hot place] 31_ If the method of claim No. 1,2, 3 or 4 is applied after the step, the coating contains a crystalline material. A 32. If the patent application No. I 2, 3 or 4 is applied 7 times, it has a further coating 4 'so that the coated slender member is connected to a larger one and includes a resilient electrical contact. ’° $ -5- Patent application scope A B c D 33. 如申請專利範圍第^一或斗項之方法,其進一步包括在 塗覆步驟後及在熱處理步驟之前或之後,移除全部或 一部份細長構件。 34. 如申請專利範圍第i,2,3或4項之方法,其中細長構件包 含一種選自包括金、矽、鋁、銅及鈇-鎢之材料。 35. 如申請專利範圍第丨,2, 3或4項之方法,其中經塗覆之細 長構件在熱處理之後比在熱處理之前具有較高降服強 度。 36. 如申請專利範圍第35項之方法,其中熱處理係在時間與 /皿度之组合下,獲得經塗覆之細長構件,其具有接近 對該塗層為最大值之降服強度,以致顯著進一步熱處 理會顯著地降低該降服強度偏離該最大值。 37. 如申睛專利範圍第丨,2, 3或4項之方法,其中該經塗覆之 細長構件在熱處理之後比之前,較具回彈性。 38. 如申清專利範圍第丨,2, 3或4項之方法,其中該塗層之經 改良材料性質,與該塗層在熱處理前之降服強度比 較’包括增加之降服強度。 39. 如申請專利範圍第1,2, 3或4項之方法,其中該塗層之經 改良材料性質’與該塗層在熱處理前之彈性模數比 較’包括增加之彈性模數。 40_如申請專利範圍第1,2, 3或4項之方法,其中該塗層之經 改良材料性質,與該塗層在熱處理前之相應安定性比 較_包括在溫度南於c之負載下增加之安定性。 41·如申凊專利範圍第3項之方法,其中該安定塗層具有大 -6 - 本紙張尺度家料(c Α视格(靜挪公釐)- ----- 裝 訂 AS B833. The method of claim 1 or item 21, further comprising removing all or part of the elongated member after the coating step and before or after the heat treatment step. 34. The method of claim i, 2, 3 or 4, wherein the elongated member comprises a material selected from the group consisting of gold, silicon, aluminum, copper and thorium-tungsten. 35. The method of claim 1, 2, 3 or 4 in which the coated elongated member has a higher yield strength after heat treatment than before heat treatment. 36. The method of claim 35, wherein the heat treatment is a combination of time and temperature to obtain a coated slender member having a drop-intensity close to the maximum value of the coating, so that it is significantly Heat treatment significantly reduces the yield strength deviation from this maximum. 37. The method of claim 2, 2, 3 or 4, wherein the coated elongated member is more resilient after heat treatment than before. 38. The method of claiming item Nos. 1,2, 3, or 4 of the patent scope, wherein the improved material properties of the coating are compared with the coating's down-strength before heat treatment, including the increased down-strength. 39. The method of claim 1, 2, 3 or 4 in which the scope of the patent application is applied, wherein the comparison of the improved material properties of the coating 'with the elastic modulus of the coating before heat treatment' includes an increased elastic modulus. 40_ The method according to item 1, 2, 3 or 4 of the scope of patent application, wherein the improved material properties of the coating are compared with the corresponding stability of the coating before heat treatment Increased stability. 41. The method of item 3 in the scope of patent application, in which the stable coating has a large size of -6-paper-size household materials (c Α visual grid (static mm)------ binding AS B8 玲亞穩塗層之降服強度。 42·如申凊專利範圍第3項之方法,其中該安定塗層具有大 於亞穩塗層之彈性模數。 3.如申晴專利範圍第3項之方法,其中該安定塗層比亞 塗層較具回彈性。 44. 如申凊專利範圍第4項之方法,其中結晶性材料具有大 於愛微結晶性材料之降服強度。Lowering strength of Ling Yawen coating. 42. The method of claim 3, wherein the stable coating has a modulus of elasticity greater than that of the metastable coating. 3. The method according to item 3 of Shen Qing's patent scope, wherein the stable coating and the bia coating are more resilient. 44. The method according to item 4 of the patent application, wherein the crystalline material has a lower strength than the microcrystalline material. 45. 如申請專利範圍第4項之方法,其中結晶性材料具有大 於毫微結晶性材料之彈性模數。 46. 如申請專利範圍第4項之方法,其中結晶性材料比毫微 結晶性材料較具回彈性。 47. —種製造結構之方法,其包括以下步驟 提供基底配件,此配件包含一種可於其上沉積第— 種材料之成形物, 、 沉積第一種材料於該成形物上,而得最初成形之沉 積物,此第一種材料包含至少一種金屬,及 鬌 在高於該沈積物吸收峰轉移溫度〇與1 5〇 t内之溫产 下’熱處理該最初成形之沉積物,獲得具有經改良^ 料性質之經熱處理之成形沉積物。 48. 一種製造結構之方法,其包括以下步驟 提供基底配件,此配件包含一種可於其上沉積第— 種材料之成形物, 沉積第一種材料於該成形物上’獲得最初成形之沉 積物,該第一種材料包含至少一種金屬與至少— 本紙張尺度適用中國國家標準(CNS) ^iTiT〇X297公釐) 47356245. The method of claim 4 in which the crystalline material has a modulus of elasticity greater than that of the nanocrystalline material. 46. The method of claim 4 in which the crystalline material is more resilient than the nanocrystalline material. 47. A method of manufacturing a structure, comprising the steps of providing a base fitting, the fitting comprising a shaped material on which the first material can be deposited, and depositing the first material on the shaped material to obtain an initial shape The first material comprises at least one metal, and the heat treatment of the initially formed deposit is performed at a temperature higher than the absorption peak transfer temperature of the deposit within 0 and 150 t to obtain an improved ^ Heat treated shaped deposits based on material properties. 48. A method of manufacturing a structure, comprising the steps of providing a base fitting, the fitting comprising a shaped material on which a first material can be deposited, and depositing the first material on the shaped material to obtain an initially shaped deposit , The first material contains at least one metal and at least — this paper size applies Chinese National Standard (CNS) ^ iTiT〇X297 mm) 473562 A8 B8 C8 _________D8 六、申請專利範圍 加劑, 該金屬係選自包括鎳與鈷,而該至少一種添加劑係 選自包括糖精與2-丁炔-ΐ,4-二醇,及 在高於該塗層吸收峰轉移溫度〇與15 〇。(;内之溫度 下,熱處理該最初成形之沉積物,獲得具有經改良材 料性質之經熱處理成形沉積物。 49. 如申請專利範圍第48項之方法,其進一步包栝使用鍍敷 浴以沉積該第一種材料,其中該至少一種添加劑為糖 精,其在鍍敷浴中之濃度係大於或等於2〇毫克/升。 50. 如申請專利範圍第48項之方法,其進一步包括使用鍍敷 浴以沉積該第一種材料,其中該至少一種添加劑為厶 丁块-1,4-二醇,其在鍍敷浴中之濃度係大於或等於5毫 克。 51_ —種製造結構之方法,其包括以下步驟 提供基底配件’此配件包含一種可於其上沉積第_ 種材料之成形物, 沉積第一種材料於該成形物上,獲得最初成形之沉 積物,其為亞穩成形沉積物,該第一種材料包含至少 一種金屬,及 在高於該沈積物吸收峰轉移溫度〇與150。(:内之溫度 下’熱處理該亞穩成形沉積物以引發轉變,獲得經熱 處理之成形沉積物,其為安定成形沉積物並具有經選 擇之材料性質。 52.如申請專利範圍第51項之方法,其中該安定成形之沉積 -8- 本紙張尺度適财g g家揉準(CNS) A4規格(21Qx 297公着) ' ~ · 473562 A B c D 六、 申請專利範圍 导涕 修正; .補元 物 具有大於亞穩成形沉積物之降服5 !度。 53 如 申請專利範圍第51項之方法,其中該安定成形 之 沉 積 物 具有大於亞穩成形沉積物之彈性模數。 54 如 申請專利範圍第51項之方法,其中該安定成形 之 沉 積 物 ,與亞穩成形沉積物之溫度安定 性比較 ,在 溫 度 於 100°C之負載下具有增加之溫度安定性。 55 — 種製造結構之方法,其包括以下步驟 提供基底配件,此配件包含一種 可於其 上沉 積 第 一 種 材料之成形物, 沉積第一種材料於該成形物上, 獲得最 初成形 之 沉 積 物,其為毫微結晶性沉積物,該 第一種 材料 包 含 至 少 一種金屬,及 在高於該沈積物吸收峰轉移溫度 0 與 150 。。内 之 溫 度 下 ,熱處理該毫微踔晶j生沉積物以 引發轉 變, 獲 得 經 熱處理之成形沉積物,其為結晶性 沉積物 並具 有 經 選 擇 之材料性質。 56 如 申請專利範圍第55項之方法,其中該結晶 性沉 積 物 具 有 大於毫微結晶性沉積物之降服強度。 57 如 申請專利範圍第55項之方法,其中該結晶 性沉 積 物 具 有 大於毫微結晶性沉積物之彈性模數。 58 如 申請專利範圍第55項之方法,其中該結晶 性沉 積 物 與 毫微結晶性沉積物之溫度安定性 比較, 在溫 度 南 於 100°C之負載下,具有增加之溫度安定性。 59 如 申請專利範圍第47, 48, 51或55項之 方法, 其中 該 成 形 -9 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) JJOZ AS B8A8 B8 C8 _________D8 6. The patent application scope of the additive, the metal is selected from the group consisting of nickel and cobalt, and the at least one additive is selected from the group consisting of saccharin and 2-butyne-fluorene, 4-diol, and above The coating absorbed peak transfer temperatures of 0 and 15 °. (; At an internal temperature, heat-treating the initially formed deposit to obtain a heat-treated formed deposit with improved material properties. 49. If the method according to item 48 of the patent application is applied, it further includes the use of a plating bath to deposit The first material, wherein the at least one additive is saccharin, and its concentration in the plating bath is greater than or equal to 20 mg / liter. 50. The method of claim 48, further comprising using plating Bath to deposit the first material, wherein the at least one additive is tintin-1,4-diol, and its concentration in the plating bath is greater than or equal to 5 mg. 51_ —A method for manufacturing a structure, which Including the following steps to provide a substrate accessory 'This accessory includes a shaped material on which the first material can be deposited, depositing the first material on the shaped material to obtain an initially shaped deposit, which is a metastable shaped deposit, The first material contains at least one metal, and the metastable shaped deposit is 'heat-treated' at a temperature higher than the absorption absorption peak transfer temperatures of 0 and 150. To obtain a heat-treated shaped deposit, which is a stable formed deposit and has selected material properties. 52. The method of claim 51 in the scope of patent application, wherein the stable formed deposit-8 CNS A4 specification (21Qx 297) '~ · 473562 AB c D VI. Patent application scope Correction of nasal discharge;. Complementary substance has a drop of 5 degrees greater than metastable formed sediment. 53 If applied The method according to item 51 of the patent, wherein the stablely formed deposit has a modulus of elasticity greater than that of the metastable formed deposit. 54 The method according to item 51 of the patent application, wherein the stablely formed deposit and metastable formed deposit Comparing the temperature stability of the sediment, it has an increased temperature stability under a load at a temperature of 100 ° C. 55 — A method of manufacturing a structure that includes the following steps to provide a substrate accessory that includes a substrate on which it can be deposited. A shaped material, a first material is deposited on the shaped material to obtain an initially shaped deposit The nanomaterial is a nanocrystalline deposit. The first material contains at least one metal, and the nanocrystals are heat-treated at a temperature higher than the absorption peak transfer temperature of 0 and 150 ° C. The sediment is induced to transform to obtain a heat-treated shaped deposit, which is a crystalline deposit and has selected material properties. 56 The method of claim 55, wherein the crystalline deposit has a greater than nanocrystalline Degradation strength of sexual deposits. 57. The method of claim 55, wherein the crystalline deposit has a modulus of elasticity greater than that of the nanocrystalline deposit. 58 If the method according to item 55 of the patent application scope, wherein the temperature stability of the crystalline deposits and the nanocrystalline deposits is compared, the temperature stability is increased under a load of 100 ° C. 59 If the method of applying for the scope of the patent No. 47, 48, 51 or 55, where the formation -9-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) JJOZ AS B8 物包括導線骨架。 6〇.:申請專利範園第47,48,51或55項之方法,其進一步包 MU墊片之電子組件’其中該導線骨架係連接 :二點#片’其中電子組件可為半導體裝置,半導體 曰°用以接觸一或多種半導體裝置之電子裝置,用 :測:一或多種半導體裝置之電子裝置,探測插件, 連接器或套筒。 a H印專利範圍第47,48,51或55項之方法,其中該成形 物包含在第二種材料中界定之空間,此空間有助於經 熱處理&lt;成形沉積物之幾何形狀。 62.如申6a ^利範圍第4入48,叫分項之方法,其中該成形 物包含第—種材料,其已塗覆一層晶種材料以促進鍍 敷。 63. 如申請專利範圍第62項之方法,其中第二種材料係選 自包括光阻與壤。 64. 如申請專利㈣㈣,心或例之方法^中最初成 形之沉積物係藉電鍍形成。 65·如申請專利範圍第47,48,51或”項之方法,其中沉積方 法係選自包括金屬之電鍍、化學蒸氣沉積(CVD)、物理 备氣沉積(PVD)、電解或無電水溶液鍍敷,及任何經由 氣體、液體或固體先質之分解或反應而造成材料沉積 之方法。 66.如申請專利範圍第47, 48, 51或55項之方法,其中該經熱 處理之成形沉積物係足夠厚,以致經改良之材料性質 -10- 本紙張尺度適财S S家標準(CNS) A4規格(210X2974^·) 係對該經熱處理之成形沉積物賦予回彈性。 67, 如申請專利範圍第47,51或55項之方法,其中該至少一種 金屬係包含一種選自包括鎳、鈷、鐵、鍺、鈀、鎢、 鋼、鉻、鈦、鋁、金及鉑之金屬。 68. 如申請專利範圍第47, 51或55項之方法,其中該至少一種 金屬係包含一種選自包括鎳、鈷及鐵之金屬。 69·如申請專利範圍第47, 48, 51或55項之方法,其進一步包 括沉積含有至少兩種金屬之第一種材料,該兩種金屬 係選自包括 Ni-Co、Co-Mn、Ni-Mn、Pd-Au、Pd-Co、W-C〇、Ή-Ν 及 Ti-W。 7〇_如申請專利範圍第47, 48, 51或55項之方法,其中該經熱 處理之成形沉積物包含Ni-Co合金。 71’如申請專利範圍第47, 48, 51或55項之方法,其進一步包 括沉積含有至少三種金屬之第一種材料,該三種金屬 係選自包括Ni-Co-Mn與Ni-W-B。 72.如申請專利範圍第47, 51或55項之方法,其在該最初成形 &quot;L積物中進一步包含至少一種添加劑,其中該至少一 種添加劑係為相對較少成份。 73·如申請專利範圍第47, 51或55項之方法,其在該最初成形 沉積物中進一步包含至少一種添加劑,其中該至少— 種添加劑中之至少一種或其衍生物,能夠與該至少— 種金屬共沉積,且能夠在中度熱處理下與該至少—種 金屬.共存’以組織該經熱處理成形沉積物之結構,以 相對於該最初成形沉積物提供增加之降服強度。 -11 - JJOZThe object includes a wire skeleton. 60 .: The method of applying for patent No. 47, 48, 51 or 55 of the patent park, which further includes the electronic component of the MU gasket 'where the wire skeleton is connected: two points # pieces' where the electronic component can be a semiconductor device, Semiconductor: An electronic device that is used to contact one or more semiconductor devices. It is used to measure: electronic devices of one or more semiconductor devices, probe plugs, connectors or sleeves. a The method of the 47th, 48th, 51st, or 55th patent, wherein the formed article includes a space defined in the second material, the space contributing to the heat treatment &lt; formed geometries of the deposit. 62. The method of claim 4a to 48 of claim 6a, which is called a sub-item method, wherein the formed article includes a first material that has been coated with a layer of seed material to facilitate plating. 63. The method of claim 62, wherein the second material is selected from the group consisting of photoresist and soil. 64. In the case of a patent application, the method of forming an initial deposit in the method ^ is formed by electroplating. 65. The method according to item 47, 48, 51 or "in the scope of patent application, wherein the deposition method is selected from the group consisting of metal plating, chemical vapor deposition (CVD), physical gas deposition (PVD), electrolytic or electroless aqueous solution plating And any method of material deposition caused by the decomposition or reaction of gas, liquid or solid precursors. 66. A method as claimed in item 47, 48, 51 or 55 of the patent application scope, wherein the heat-treated shaped deposit is sufficient Thick so as to improve the material properties -10- This paper size is suitable for SS Home Standard (CNS) A4 specification (210X2974 ^ ·) to give the heat-treated shaped deposits resilience. 67, such as the scope of application for patent 47 51, 55, or 55, wherein the at least one metal system comprises a metal selected from the group consisting of nickel, cobalt, iron, germanium, palladium, tungsten, steel, chromium, titanium, aluminum, gold, and platinum. The method of the scope of items 47, 51, or 55, wherein the at least one metal system comprises a metal selected from the group consisting of nickel, cobalt, and iron. 69. The method of the scope of claims 47, 48, 51, or 55 of the application, further Including deposits containing at least The first material of the two metals is selected from the group consisting of Ni-Co, Co-Mn, Ni-Mn, Pd-Au, Pd-Co, WC〇, Ή-N and Ti-W. 7〇_ For example, the method of applying scope 47, 48, 51 or 55, wherein the heat-treated shaped deposit comprises a Ni-Co alloy. 71 'According to the method of applying scope 47, 48, 51 or 55, further Including depositing a first material containing at least three metals, the three metals being selected from the group consisting of Ni-Co-Mn and Ni-WB. 72. The method of claim 47, 51 or 55, which is initially formed &quot; L deposit further contains at least one additive, wherein the at least one additive is a relatively small amount of ingredients. 73. The method of claim 47, 51 or 55, which further comprises in the initially formed sediment At least one additive, wherein at least one of the at least one additive or a derivative thereof can be co-deposited with the at least one metal and can coexist with the at least one metal under moderate heat treatment to organize the heat-treated Shape the structure of the deposit relative to that Shaped deposits provide increased drop strength. -11-JJOZ 其中該最 凡如申請專利範圍第47,51或55項之方法,其在該最初成形 沉積物中進一步包含至少一種添加劑,其中該至少— 種添加劑包括含硫化合物。 75.如申請專利範圍第47,51或55項之方法,其在該最初成形 沉積物中進一步包含至少一種添加劑,其中該至少— 種添加劑係選自包括糖精、莕_三_磺酸、厶丁 块-1,4-二醇及硫服。 瓜如申請專利範圍第47,48,51或55項之方法,其進一步包 括在一種選自包括廳、麵Γ、種類丨增白劑及種類2増 白劑之第三種物質存在下,沉積第一種材料。 苁如申請專利範圍第47,48,51或55项之方法,其中該最初 成形沉積物係在舞觀結構上經歷放熱轉變,從較無组 織化至較具组織化狀態’其中放熱轉變具有尖峰溫 度’且其中熱處理溫度係在高於尖學溫度此與高於觸 78. 如申請專利範圍第47, 48, 51或乂項之方法 成形之沉積物包含非晶質材料。 79. 如申請專利範圍第78項 此 z卜. 万忐其中熱處理步驟係 邵份最初成形沉積物材料中造成轉變,在娘 8。形沉積物中從非晶質材料轉變成有序材料。 肌:申請專利範圍第47,48,51或柯之方法,其中該經 處理之成形沉積物包含有序材料。 81·如申請專利範圍第47,48,5 万法,其中兮邊 成形之沉積物包含毫微結晶性材料。 '^取 -12- 本纸張尺度適财國準(CNS) Α4規格(靡挪公fAmong them, the method as in the scope of the patent application No. 47, 51 or 55, further comprises at least one additive in the initially formed sediment, wherein the at least one additive includes a sulfur-containing compound. 75. The method of claim 47, 51, or 55, further comprising at least one additive in the initially formed sediment, wherein the at least one additive is selected from the group consisting of saccharin, hydrazone trisulfonic acid, hydrazone Butyl-1,4-diol and sulfur service. The method of Guarullo's patent application No. 47, 48, 51 or 55, further comprising depositing in the presence of a third substance selected from the group consisting of hall, surface Γ, type 丨 whitening agent and type 2 whitening agent. The first material.苁 If the method of the scope of patent application is No. 47, 48, 51 or 55, wherein the initially formed sediment undergoes an exothermic transition on the structure of Wuguan, from a less organized to a more organized state, where the exothermic transition It has a peak temperature 'and wherein the heat treatment temperature is higher than the peak temperature and the contact temperature is higher than 78. For example, the deposit formed by the method of the patent application scope 47, 48, 51 or 包含 includes an amorphous material. 79. For example, the scope of application for the patent is No. 78. This is Z. Wan, where the heat treatment step is caused by Shao Fen's initial formation of the sedimentary material. From a non-crystalline material to an ordered material. Muscle: Patented Method 47, 48, 51 or Ko, where the processed shaped deposits contain ordered material. 81. If the scope of patent application is No. 47,485,000, the deposit formed by the side contains nanocrystalline material. '^ 取 -12- This paper is suitable for financial standards (CNS) Α4 size Hold 二申明專利範圍第81项之方法,其中熱處理步驟係在 邵h最初成形沉積物材料中造成轉變,從毫微 結晶性材料至結晶性材料。 83·如申請專利範圍第4入48, 51或55項之方法,其中該經熱 處理之成形沉積物包含結晶性材料。 84.如:請專利範^圍第47,48,51或55項之方法,其進一步包 括'儿積第—種材料,以致使該經熱處理之成形沉積物 連接至基底塾片,並包含回彈性電接點。 85·如申請專利範圍第们,48, 51或55項之方法,其進一步包 括在沉積步驟後及在熱處理步驟之前或之後,移除全 部或一部份該成形物。 Μ如中請㈣範圍第85項之方法,其中經熱處理成形沉 積物(第一部份,係固定至基底配件,而經熱處理成 形沉積物之第二部份係與基底配件分離,以致若不受 限制時,其可相關於基底配件回彈性地移動。 87. 如申請專利範圍第47,48,51或55項之方法,其中該成形 物包含一種選自包括金 '矽、鋁、銅及鈦_鎢之材料。 88. 如申請專利範圍第47,48, 51或55項之方法,其中該經熱 處理之成开^沉積物具有比該最初成形沉積物高之降服 強度。 89. 如申請專利範圍第88項之方法,其中熱處理係在時間 與溫度之組合下’獲得經熱處理之成形沉積物,其具 有接近對該經熱處理之成形沉積物為最大值之降服強 度,以致顯著進一步熱處珲會顯著地降低該降服強度 -13- 本紙張尺度適用中國國家標準(CNS) A4规格(210 X 297公釐) Λ8 ΒδThe method of claim 81 of the second patent claim, wherein the heat treatment step causes a change in Shao's initial forming of the sedimentary material, from nanocrystalline material to crystalline material. 83. The method according to claims 4 to 48, 51 or 55, wherein the heat-treated shaped deposit comprises a crystalline material. 84. For example, please refer to the method of item 47, 48, 51 or 55, which further includes a material, such that the heat-treated shaped deposit is connected to the base septum and includes a back Flexible electrical contacts. 85. The method of claim 48, 51 or 55, further comprising removing all or part of the formed article after the deposition step and before or after the heat treatment step. The method as described in item 85 of the above, wherein the heat-treated formed deposit (the first part is fixed to the base fitting, and the second part of the heat-treated formed deposit is separated from the base fitting, so that if not When restricted, it can be elastically moved in relation to the base fitting. 87. The method of claim 47, 48, 51 or 55, wherein the formed article comprises a member selected from the group consisting of gold, silicon, aluminum, copper and Titanium_tungsten material. 88. The method of claim 47, 48, 51 or 55, wherein the heat-treated deposited deposit has a higher yield strength than the initially formed deposit. 89. If applied The method of item 88 of the patent, wherein the heat treatment is to obtain a heat-treated shaped deposit under a combination of time and temperature, which has a yield strength close to the maximum value of the heat-treated shaped deposit, so that the heat treatment is significantly further Will significantly reduce the yield strength -13- This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) Λ8 Βδ 偏離該最大值。 9〇·:申請專利範圍第47,48,51或5 處理成形沉積物之經改良材料性質,其中該經熱 沉積物之降服強度,包括缺 相對於最初成形 91·如申請專利範圍第47, 48, 增加之降服強度。 處理成形沉積物之經改良^^万法,其中該經熱 沉積物之彈性模數,包括?料性質1對於最初成形 〇9 , Ο, * 、邊選擇增加之彈性模數。 92_如申請專利範圍第4 模数 # ^ 8,51或55項之方法,其中該經埶 =形沉積物之經改良材料性質,與最初成形沉積 物疋相應安定性比較,包括在溫度高於峨之負^ 下’經選擇增加之安定性。 91如申請專利範圍第47, 處理之成形沉積物, 性0Deviation from this maximum. 9〇 ·: Improved material properties of processed deposited deposits under scope 47,48,51 or 5 of the application for patents, wherein the yield strength of the thermal deposits, including defects relative to the initial formation 91. If applied for scope 47, 48, Increased strength of surrender. An improved method for processing shaped deposits, wherein the elastic modulus of the thermal deposits includes: Material property 1 For the initial forming 〇9, 〇, *, the elastic modulus of the edge selection increases. 92_ If the method of the patent application No. 4 module # ^ 8, 51 or 55, wherein the modified material properties of the warp-shaped deposits are compared with the corresponding stability of the initially formed deposits, including at high temperatures Yu Ezhi's negative ^ 'selected to increase stability. 91 If the scope of the patent application is No. 47, the processed shaped sediment, 裝 48, 51或55項之方法,其中該經熱 比最初成形之沉積物較具回彈The method of 48, 51 or 55, wherein the heat is more resilient than the initially formed sediment -14 - 本紙張尺度適用中國國家標準⑴^^) Α4規格(210X297公釐)-14-This paper size applies the Chinese national standard ^^) Α4 size (210X297 mm)
TW087120343A 1997-09-17 1998-12-08 Method of making a product with improved material properties by moderate heat treatment of a metal incorporating a dilute additive TW473562B (en)

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Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7458816B1 (en) 2000-04-12 2008-12-02 Formfactor, Inc. Shaped spring
WO2001080315A2 (en) * 2000-04-12 2001-10-25 Formfactor, Inc. Shaped springs and methods of fabricating and using shaped springs
US6640432B1 (en) 2000-04-12 2003-11-04 Formfactor, Inc. Method of fabricating shaped springs
EP1398831A3 (en) 2002-09-13 2008-02-20 Shipley Co. L.L.C. Air gaps formation
JP3745744B2 (en) * 2003-04-16 2006-02-15 住友電気工業株式会社 Method for producing metal structure and metal structure produced by the method
US7354354B2 (en) * 2004-12-17 2008-04-08 Integran Technologies Inc. Article comprising a fine-grained metallic material and a polymeric material
JP4762577B2 (en) * 2005-03-11 2011-08-31 古河電気工業株式会社 Method for producing nanostructure
US7521128B2 (en) * 2006-05-18 2009-04-21 Xtalic Corporation Methods for the implementation of nanocrystalline and amorphous metals and alloys as coatings
US7782072B2 (en) * 2006-09-27 2010-08-24 Formfactor, Inc. Single support structure probe group with staggered mounting pattern
EP2639341B1 (en) * 2010-11-11 2020-01-22 Hitachi Metals, Ltd. Method for producing aluminium foil
US9714729B2 (en) * 2011-11-30 2017-07-25 Corning Incorporated Complex structures in refractory bodies and methods of forming
JP5077479B1 (en) * 2011-12-15 2012-11-21 オムロン株式会社 Contacts and electronic parts using the same
JP6054258B2 (en) * 2013-06-17 2016-12-27 名古屋メッキ工業株式会社 Brazed connections for electronic equipment
FR3041147B1 (en) * 2015-09-14 2018-02-02 3Dis Tech METHOD FOR INTEGRATING AT LEAST ONE 3D INTERCONNECT FOR INTEGRATED CIRCUIT MANUFACTURING
KR101748082B1 (en) 2016-05-18 2017-06-16 세종대학교산학협력단 Probe tip including amorphous alloy or nanocrystalline shape memory alloy using amorphous precursor, probe card including the same and method of recovering shape of the same
US11015255B2 (en) * 2018-11-27 2021-05-25 Macdermid Enthone Inc. Selective plating of three dimensional surfaces to produce decorative and functional effects
CN113005490A (en) * 2021-03-16 2021-06-22 昆明理工大学 Method for improving corrosion performance of nanocrystalline nickel through heat treatment
KR102409029B1 (en) * 2022-04-12 2022-06-14 이시훈 Probe pin

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1696093A1 (en) * 1968-02-03 1971-11-04 Draht Und Federnwerke Veb Process to increase the fatigue strength of surface-treated springs
JPH02221377A (en) * 1989-02-22 1990-09-04 Toyota Motor Corp Coil spring made of ti alloy
AU4160096A (en) * 1994-11-15 1996-06-06 Formfactor, Inc. Probe card assembly and kit, and methods of using same

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