KR101748082B1 - Probe tip including amorphous alloy or nanocrystalline shape memory alloy using amorphous precursor, probe card including the same and method of recovering shape of the same - Google Patents

Abstract

There is provided a probe tip including a nanocrystalline shape memory alloy using an amorphous precursor. Specifically, a probe tip including a nanocrystalline shape memory alloy using an amorphous precursor includes a tip portion and a body portion. The tip includes a conductive material and is configured to contact the test pad of the semiconductor device. The body portion is connected to the distal end portion and configured to transmit an electrical signal to the distal end portion. The conductive material is a shape memory alloy represented by Ni _a Ti _b Hf _c M _d wherein a is not less than 40 and not more than 50, b is not less than 25 and not more than 35, c is not less than 10 and not more than 20, B19 'composed of Ni-Ti-Hf as a solute element having a negative mixing sequence with Ni, Ti and Hf, and satisfying a + b + c + d = 100, Which is a metal that can be employed.

Description

TECHNICAL FIELD [0001] The present invention relates to a probe tip including a nanocrystalline shape memory alloy or an amorphous alloy using an amorphous precursor, a probe card including the probe tip, and a method for recovering the shape of the probe card. OF RECOVERING SHAPE OF THE SAME}

The present invention relates to a probe tip, a probe card including the probe tip, and a method for recovering the shape of the probe tip. More particularly, the present invention relates to a probe tip including a nanocrystalline shape memory alloy or amorphous alloy using an amorphous precursor, , A probe card including the probe card, and a shape recovery method thereof.

Generally, a semiconductor device includes a fabrication process in which a circuit pattern including electrical elements on a wafer and a contact pad for inspecting the circuit pattern are formed on the wafer, a test for checking whether a circuit pattern is abnormal by making electrical contact with the contact pad, an electrical die sorting process, and a package assembly process in which a circuit pattern selected with good quality is assembled into a semiconductor package.

In the case of the inspection process, a probe card is used to provide electrical signals to the contact pads. The probe card is electrically connected to a tester for applying an electrical signal, and transmits the electric signal applied from the tester by bringing the probe tip into contact with the contact pad of the semiconductor device. The electric signal applied to the contact pad from the tester via the probe card is again received by the tester, thereby testing whether the semiconductor device is defective or not.

The probe tip may have a sharp tip or a tip with a narrow contact surface in order to remove the oxide film on the surface of the contact pad or to easily transmit an electric signal.

On the other hand, in recent years, as the degree of integration of semiconductor chips increases, the interval between neighboring contact pads on the wafer becomes very narrow, and probe tips for contacting the contact pads are also made in a minute shape.

Further, when an oxide film is formed by exposing the surface of the contact pad to air, in order to transmit an electric signal to the contact pad, sufficient force may be applied to the probe tip to remove or scratch the surface oxide film of the contact pad. There is a problem that the shape of the probe tip used for inspection of various wafers may be deformed or distorted unlike the shape that the probe tip originally possesses.

SUMMARY OF THE INVENTION A problem to be solved by the present invention is to provide a probe tip capable of reducing deformation and distortion of the tip even when it is reused in a repeated inspection process of a semiconductor wafer, a probe card including such a probe tip, And to provide a method for restoring the shape of a probe tip that can be recovered.

According to an aspect of the present invention, there is provided a probe tip including a nanocrystalline shape memory alloy using an amorphous precursor. The probe tip includes a tip portion and a body portion. The tip portion includes an electrically conductive material and is configured to contact the test pad of the semiconductor device. The body is connected to the distal end to transmit an electrical signal to the distal end. Wherein the conductive material is a shape memory alloy represented by Ni _a Ti _b Hf _c M _d wherein a is not less than 40 and not more than 50, b is not less than 25 and not more than 35, c is not less than 10 and not more than 20, d B19 'phase consisting of Ni-Ti-Hf as a solute element having a negative mixing column with Ni, Ti and Hf and satisfies a + b + c + d = 100, Lt; / RTI > metal).

M of the shape memory alloy may be a metal selected from the group consisting of Zr, Pd, Pt, Au, Al, Fe, Cu, Sn, Cr and V.

The shape memory alloy may include crystal grains having a size of 1 nm or more and less than 1 占 퐉.

The shape memory alloy may be configured to recover its shape in the range of 400 K or more and 650 K or less.

According to an aspect of the present invention, there is provided a probe tip including an amorphous alloy. The probe tip includes a tip portion and a body portion. The tip portion includes an electrically conductive material and is configured to contact the test pad of the semiconductor device. The body is connected to the distal end to transmit an electrical signal to the distal end. Wherein the conductive material is an amorphous alloy represented by Ni _a Ti _b Hf _c M _d wherein a is not less than 40 and not more than 50, b is not less than 25 and not more than 35, c is not less than 10 and not more than 20, B19 'composed of Ni-Ti-Hf as a solute element having a negative mixing sequence with Ni, Ti and Hf, and satisfying a + b + c + d = 100, Which is a metal that can be employed.

M of the amorphous alloy may be a metal selected from the group consisting of Zr, Pd, Pt, Au, Al, Fe, Cu, Sn,

The distal end portion and the body portion may be integrally formed.

The distal end portion may be electrically connected to the body portion and configured to be detachable from the body portion.

According to an aspect of the present invention, there is provided a probe card. The probe card includes a printed circuit board, a probe head, and a plurality of probe tips. The printed circuit board includes a circuit pattern. The probe head is electrically connected to the printed circuit board. Each of the probe tips is disposed on the probe head so as to protrude from a surface opposite to the surface on which the printed circuit board is opposed, and is electrically connected to the circuit pattern. Wherein the probe tip is a probe tip comprising a nanocrystalline shape memory alloy using an amorphous precursor, the alloy being represented by Ni _a Ti _b Hf _c M _d wherein a is greater than or equal to 40 and less than or equal to 50, b is greater than or equal to 25, C is not less than 10 and not more than 20, d is not less than 5 and not more than 10 and satisfies a + b + c + d = 100, and M is a solute element having a negative mixing column with Ni, Which is a metal that can be solubilized on B2-B19 'consisting of Ni-Ti-Hf.

The M of the alloy may be a metal selected from the group consisting of Zr, Pd, Pt, Au, Al, Fe, Cu, Sn, Cr and V.

The alloy may be a shape memory alloy comprising crystal grains having a size of 1 nm or more and less than 1 占 퐉.

The probe tip may be configured to be removable relative to the probe head.

At least a portion of the probe tip may be configured to recover its shape in the range of greater than 400K and less than 650K.

The portion of the probe tip configured to recover the shape may be the tip of the probe tip.

According to one aspect of the present invention, there is provided a method for recovering a shape of a probe tip including a nanocrystalline shape memory alloy using an amorphous precursor. The method comprises the steps of: (a) separating a probe tip from a probe card; (b) heating the probe tip to a predetermined first temperature; (c) cooling the probe tip to a second predetermined temperature; And (d) reassembling the probe tip into the probe card. Wherein the probe tip is _a shape memory alloy represented by Ni _a Ti _b Hf _c M _d wherein a is greater than or equal to 40 and less than or equal to 50, b is greater than or equal to 25 and less than or equal to 35, c is greater than or equal to 10 and less than or equal to 20, B19 'composed of Ni-Ti-Hf as a solute element having a negative mixing sequence with Ni, Ti and Hf, and satisfying a + b + c + d = 100, Lt; / RTI > metal). The first temperature is a temperature of 400 K or more and 650 K or less, and the second temperature is a temperature of 273 K or more and 450 K or less.

M of the shape memory alloy may be a metal selected from the group consisting of Zr, Pd, Pt, Au, Al, Fe, Cu, Sn, Cr and V.

The shape memory alloy may include crystal grains having a size of 1 nm or more and less than 1 占 퐉.

According to the present invention, even if the shape of the probe tip that can be used in the inspection process of the semiconductor device is deformed or distorted by the repeated inspection process under pressure, such a distorted shape can be recovered and reused, It is possible to reduce the cost of the inspection process.

In addition, by easily recovering the shape of the probe tip by a simple heat treatment, it is possible to increase the reusability of the probe tip and reduce the overall cost associated with the inspection process of the semiconductor device.

However, the effects of the present invention are not limited to those mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

1 is a cross-sectional view illustrating a probe card according to an embodiment of the present invention.
2A to 2C are views showing examples of a probe tip according to embodiments of the present invention.
3 is a flowchart showing a flow of a method of manufacturing a probe tip according to an embodiment of the present invention.
FIGS. 4A-4D are X-ray diffraction (XRD) diagrams of amorphous precursors of shape memory alloys that may be included in probe tips according to embodiments of the present invention.
FIG. 5A is a graph showing super-plasticity characteristics in a supercooled liquid phase region according to a glass transition of a shape memory alloy included in a probe tip according to an embodiment of the present invention. FIG.
FIG. 5B is differential scanning calorimetry (DSC) graphs showing the crystallization behavior of a shape memory alloy included in a probe tip according to embodiments of the present invention with temperature.
5C is an X-ray diffraction diagram of a crystallized shape memory alloy included in a probe tip according to an embodiment of the present invention.
6A and 6B are graphs of differential scanning calorimetry (DSC) graphs showing the change in the temperature of the phase transformation upon heating and cooling after crystallization, according to the alloy composition of the shape memory alloy included in the probe tip according to one embodiment of the present invention .
7 is a flowchart illustrating a procedure of a shape recovery method of a probe tip according to an embodiment of the present invention.
8A and 8B are diagrams illustrating a secondary electron image of a shape memory alloy that may be included in a probe tip according to an embodiment of the present invention.
9A to 9D are TEM (transmission electron microscopy) images and SAD (selected area diffraction) patterns of a shape memory alloy that can be included in a probe tip according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms.

In the drawings, where a layer is referred to as being "on" another layer or substrate, it may be formed directly on another layer or substrate, or a third layer may be interposed therebetween. In the drawings, the thicknesses of the layers and regions may be exaggerated or reduced for clarity. Like reference numerals throughout the specification denote like elements.

Probe card

1 is a cross-sectional view illustrating a probe card according to an embodiment of the present invention.

Referring to FIG. 1, a probe card according to the present embodiment includes a printed circuit board 11, a probe head 15, and a plurality of probe tips 17. The probe card further includes a plurality of conductive elastic connection pins 13, one or more gussets 21, 23 and 25, a leaf spring 31 and one or more holding members 41, 43 and 45 can do.

The printed circuit board 11 is a circuit part for providing an electrical signal to the probe head 15 through the conductive elastic connection pins 13 and checks whether or not the semiconductor device is defective through the contact pads for inspection of the semiconductor device To transmit the electrical signal for the < / RTI > The electrical signal may be a signal provided from a separately provided tester (not shown). The electrical signal provided to the printed circuit board 11 can be configured to be transmitted to the probe head 15 through the conductive elastic connection pins 13. [ To this end, a plurality of connection holes can be defined in the printed circuit board 11 so that the conductive elastic connection pins 13 can be electrically connected to the circuit. However, the printed circuit board 11 is electrically connected to the probe head 15 by the conductive elastic connection pins 13, and in other embodiments, the printed circuit board 11 may be electrically connected to the printed circuit board 11 An electrical signal may be transmitted to the probe head 15. For example, the probe head 15 may be arranged directly on the printed circuit board 11 and contacted, or another member may be further disposed therebetween, so that the probe head 15 is electrically connected. In this embodiment, it is assumed that the printed circuit board 11 and the probe head 15 are electrically connected by the conductive elastic connection pins 13 by way of example.

The conductive elastic connection pins 13 may be disposed between the printed circuit board 11 and the probe head 15. [ The conductive elastic connection pins 13 may be respectively inserted into the connection holes of the printed circuit board 11 and partially protruded. The conductive elastic connection pins 13 may be mounted on the printed circuit board 11 and the probe head 15 such that the spaced distance between the printed circuit board 11 and the probe head 15 may be at least partially varied, And may have a curved shape in between. This curved shape is deformed and restored by the elasticity, so that the distance between the printed circuit board 11 and the probe head 15 can be changed. It is to be noted that such an elastic member is disposed between the printed circuit board 11 and the probe head 15 by way of example and the elastic member may be provided between the probe head 15 and the probe tips 17 And the like. As such, the elastic member can be disposed at various locations within the probe card to provide elasticity along the direction in which pressure is applied to the inspection substrate of the semiconductor device via the probe tips 17. [

The probe head 15 may be configured to transmit an electrical signal provided from the conductive elastic connection pins 13 to the probe tip 17. [ The probe head 15 can be spaced apart from the printed circuit board 11 by the conductive elastic connection pins 13 and can be opposed to the printed circuit board 11. [

The probe tips 17 may be disposed on one side of the probe head 15 so as to protrude from the probe head 15. Specifically, the probe tips 17 may be arranged so that the probe head 15 protrudes from the opposite surface of the surface opposed to the printed circuit board 11. The probe tip 17 can be configured to transmit an electric signal provided from the conductive elastic connection pins 13 to the inspection contact pad of the semiconductor device. The shape of the probe tip 17 may vary, and the probe tip 17 will be described in more detail with reference to FIGS. 2A to 2C.

Probe tip

2A to 2C are views showing examples of a probe tip according to embodiments of the present invention.

Referring to FIGS. 2A to 2C, the probe tip according to the embodiments of the present invention includes a tip portion 17a that can contact a contact pad for inspection of a semiconductor device. The probe tip may further include a body portion 17b connected to the distal end 17a and configured to transmit an electrical signal to the distal end. According to the embodiment, the tip portion 17a of the probe tip and the body portion 17b may be integrally formed. In this case, the distal end portion 17a and the body portion 17b of the probe tip can be made of the same components. Alternatively, in another embodiment, the distal end portion 17a of the probe tip may be configured to be separated from the body portion 17b. In this case, an electrical signal can be transmitted from the body portion 17b of the probe tip to the tip portion 17a of the probe tip. That is, the tip portion 17a of the probe tip can be electrically connected to the body portion 17b of the probe tip. However, the probe tips shown in Figs. 2A to 2C are illustrative, and the probe tips according to the present invention are not limited to the embodiments shown in Figs. 2A to 2C, but may be configured to have different shapes It should be understood that there is.

In the inspection process of the semiconductor device, such a probe tip can be brought into direct contact with the inspection contact pad of the semiconductor device at a predetermined pressure. At this time, as the probe tip is repeatedly used in the inspection process of the semiconductor device, the shape of the probe tip in contact with the contact pad for inspection may be partially deformed or distorted. For example, when the tip portion 17a of the probe tip in contact with the contact pad for inspection of the semiconductor device has an acute shape, the tip portion 17a of the probe tip is repeatedly contacted with various contact pads at a predetermined pressure, Can be deformed and distorted into a blunt shape. In this case, the inspection result of the semiconductor device may be influenced by the distorted shape of the probe tip 17a.

In order to correct such shape distortion of the probe tip, the probe tip according to the present embodiment may include a shape memory alloy or an amorphous alloy. That is, the probe tip includes a conductive material in order to provide an electrical signal to the inspection contact pad of the semiconductor device. In particular, the tip portion 17a of the probe tip is made of a conductive material, Ni _a Ti _b Hf _c M _d And may include a shape memory alloy or an amorphous alloy to be expressed. Wherein a is not less than 40 and not more than 50, b is not less than 25 and not more than 35, c is not less than 10 and not more than 20, d is not less than 5 and not more than 10 and a + b + c + d = 100 . Further, M is a metal component which can be solidified on B2-B19 'formed of Ni-Ti-Hf as a solute element having a negative mixed heat with Ni, Ti and Hf, and more specifically, Zr, Pd, Pt , Au, Al, Fe, Cu, Sn, Cr, and V.

Generally, shape memory alloys have shape memory characteristics and superelasticity characteristics. The shape memory property is obtained by modifying martensite of low temperature stable phase obtained by cooling the shape memory alloy at a low temperature and modifying the external shape at a low temperature and then heating it to a high temperature stable phase austenite phase transformation, and recover the shape before deformation.

The superelastic property is a characteristic that the deformed alloy is restored to its initial shape after returning to a stable high temperature phase by removing the applied stress after applying stress in a high temperature stable phase region.

The shape memory and superelastic characteristics of such shape memory alloys are characteristics that appear as austenite or martensite phase transition at a high / low temperature stable phase, and physical characteristics such as the type and degree of the stable phase depend on the temperature, In applying the alloy, the phase transformation temperature of the shape memory alloy is an important factor.

In the case of a typical shape memory alloy, by using a Ni-Ti binary shape memory alloy, the temperature range in which the alloy can be applied is limited to about 80 캜 or less. As a result, it is difficult to apply such a binary Ni-Ti shape memory alloy to a component that can be exposed to a high temperature environment.

In addition, attempts have been made to develop a shape memory alloy for high temperature by adding another element to the binary alloy of Ni-Ti, but in this case, as the available temperature becomes higher, the moldability is rapidly alleviated, . Further, in order to miniaturize the crystal grains of the high-temperature shape memory alloy, it is necessary to perform severe plastic working at a temperature of about 600 ° C or higher.

Particularly, as the size of the semiconductor device is miniaturized and the size of the contact pad for inspection of the semiconductor device is also miniaturized, the shape of the probe tip in contact with the contact pad for inspection of such a miniaturized semiconductor device also needs to be precisely processed have. However, in order to process the shape memory alloy so as to have nanocrystalline grains, a complicated process is required to process the shape of the probe tip into a desired shape and a high cost may be required.

However, the shape memory alloy included in the probe tip according to the embodiments of the present invention is an amorphous precursor alloy represented by Ni _a Ti _b Hf _c M _d (where a is not less than 40 and not more than 50, and b is not less than 25 And not more than 35, c is not less than 10 and not more than 20, d is not less than 5 and not more than 10, and satisfies a + b + c + d = 100 and M has a negative mixing column with Ni, Ti and Hf Can be manufactured to have nanocrystalline grains by a simple thermo plastic working and heat treatment process in a supercooled liquid phase region of a metal (which is a metal which can be dissolved on B2-B19 'made of Ni-Ti-Hf as a solute element) The reusability of the probe tip using the shape memory property of the shape memory alloy can be improved while the manufacturing cost is reduced.

Meanwhile, the probe tip according to embodiments of the present invention may be an amorphous alloy represented by Ni _a Ti _b Hf _c M _d (where a is at least 40 and not more than 50, b is at least 25 and not more than 35, c is at least 10 And M is a solute element having a negative mixing sequence with Ni, Ti and Hf, and Ni-Ti-Hf < RTI ID = 0.0 > , The elastic strain of the probe tip is improved to about 2% or more (in the case of the crystal grains, less than 1% of the crystal grain is contained) ), The strength of the alloy increases, and resistance to plastic deformation increases. Therefore, when the probe tip includes such an amorphous alloy, elastic recovery can be improved in the repeated inspection process of the semiconductor device as compared with the probe tip including the crystal alloy, so that the life of the probe tip can be increased.

On the other hand, this way, Ni _a Ti _b Hf _c M _d shape memory alloy containing nanocrystalline using an amorphous precursor is represented by an amorphous alloy or a Ni _a Ti _b Hf _c M _d is represented as (where, a is 40 - and 50 B is 25 or more and 35 or less, c is 10 or more and 20 or less, d is 5 or more and 10 or less and a + b + c + d = 100, M is Ni, Ti and Hf (Atomic%) of the solute element having a negative mixed heat and being a metal which can be solved on B2-B19 'made of Ni-Ti-Hf is out of the above-mentioned range, the amorphous alloy or Partial crystallization of the amorphous precursor alloy makes it difficult to obtain an improved elastic strain as an amorphous alloy or to form nano-crystal grains as a crystal grain alloy. The partial crystallization of such an amorphous (precursor) alloy is described below with reference to FIGS. 4A to 4D.

Hereinafter, a method of manufacturing a probe tip according to embodiments of the present invention will be described in detail with reference to FIG.

Method for manufacturing a probe tip including a Ni-Ti-Hf-M based shape memory alloy

3 is a flowchart showing a flow of a method of manufacturing a probe tip according to an embodiment of the present invention.

Referring to FIG. 3, a method of manufacturing a shape memory alloy of a probe tip according to an embodiment of the present invention includes forming a Ni-Ti-Hf-M alloy (M is a solute having a negative mixed heat with Ni, (Step S12) of rapidly solidifying and alloying the amorphous precursor alloy into an amorphous precursor alloy, which is a metal that can be solidified on B2-B19 'made of Ni-Ti-Hf as an element, (S14) molding the amorphous precursor alloy into a load, and heating the formed amorphous precursor alloy to a crystallization completion temperature or higher (S16).

In this embodiment, the probe tip may be formed integrally with the distal end portion and the body portion or may be formed such that the distal end thereof is detachable from the body (see Figs. 2A to 2C). In either case, the tip of the probe tip includes a shape memory alloy. According to the embodiment, even if the tip portion and the body portion of the probe tip are integrally formed, the shape memory alloy may have different composition ratios. For example, the tip of the probe tip is configured to include a nanocrystalline shape memory alloy of Ni ₅₀ Ti ₃₃ Hf ₁₂ Zr ₅ , and the body of the probe tip includes a nanocrystalline shape memory alloy of Ni ₅₀ Ti ₂₈ Hf ₁₂ Zr ₁₀ . However, in the present embodiment, it is assumed that the tip end portion and the body portion of the probe tip are integrally formed and include the shape memory alloy of the same composition for the convenience of explanation.

In step S12, the Ni-Ti-Hf-M based alloy is rapidly solidified and can be cast into an amorphous precursor alloy. In this case, M may be a metal selected from the group consisting of Zr, Pd, Pt, Au, Al, Fe, Cu, Sn, The composition of such an amorphous precursor alloy is confirmed by X-ray diffraction (XRD) of FIGS. 4A to 4D.

Figures 4A-4D are X-ray diffraction diagrams of amorphous precursors of shape memory alloys that may be included in a probe tip according to embodiments of the present invention.

Referring to FIG. 4A, when the composition of the shape memory alloy is Ni ₅₀ Ti ₃₃ Hf ₁₂ M ₅ , Ni ₄₇ Ti ₃₂ Hf ₁₃ M ₅ , and Ni ₄₅ Ti ₃₅ Hf ₁₅ M ₅ , Ni ₄₀ Ti ₃₃ XRD in the case of Hf ₂₀ M ₇ is confirmed. Referring to FIG. 4A, in each case, 2? = 40 deg. And shows an amorphous structure having a broad peak in the vicinity thereof. At this time, in the composition of the Ni-Ti-Hf-M type shape memory alloy, Zr was used as M. 4B to 4D described later, Zr is used as M, but M is not limited to the composition of the shape memory alloy according to this embodiment. That is, M is a solute element having a negative mixed heat with Ni, Ti and Hf, and is a metal that can be solidified on B2-B19 'formed of Ni-Ti-Hf, and Zr, Pd, Pt, Au, , Cu, Sn, Cr, and V. < RTI ID = 0.0 > 4A shows an amorphous state in the case where Ni is included in the range of 40 to 50, particularly in the composition of the Ni-Ti-Hf-M type shape memory alloy. On the contrary, when the Ni exceeds the range of 40 to 50, the XRD pattern of the alloy appears to be partially crystallized, which will be described with reference to FIG. 4B.

Referring to FIG. 4B, XRD in the case of Ni ₅₃ Ti ₃₀ Hf ₁₂ M ₅ and Ni ₃₈ Ti ₃₅ Hf ₁₇ M ₁₀ is confirmed as the composition of the shape memory alloy. Referring to FIG. 4B, in both cases, partially crystallized XRD peaks are observed, specifically, in the case of Ni ₅₃ Ti ₃₀ Hf ₁₂ M ₅ , 2θ = 30 deg., 42 deg. 60 deg. It is confirmed that a narrow peak is generated in some cases. Also, it was confirmed that a strong peak occurs at 2? = 42 deg. When Ni ₃₈ Ti ₃₅ Hf ₁₇ M ₁₀ is used. 4A and 4B, when the Ni content in the composition ratio of the Ni-Ti-Hf-M type shape memory alloy is less than 40 or more than 50, it is found that the amorphous precursor alloy is partially crystallized I could.

Referring to FIG. 4C, XRD in the case of Ni ₅₀ Ti ₃₃ Hf ₁₂ M ₅ and Ni ₅₀ Ti ₂₈ Hf ₁₂ M ₁₀ is confirmed as the composition of the shape memory alloy. Referring to FIG. 4C, in both cases, it is confirmed that a broad peak appears at 2? = 40 deg. In an amorphous state. Thus, it can be seen that when Ti is included in the composition ratio in the range of 25 to 35 and M is included in the composition ratio in the range of 5 to 10, it can have the characteristic as an amorphous precursor for use in the probe tip according to the present invention have. On the other hand, when the composition ratio of M is out of the range of 5 to 10, or when the composition ratio of Ti is out of the range of 25 to 35, the amorphous precursor can be partially crystallized, which will be described in detail with reference to FIG. 4D.

Referring to Figure 4d, as a composition of the shape memory _{alloy, Ni 50 Ti 23 Hf 12 M} 15 of the _{case, Ni 50 Ti 25 Hf 12 M} 13 of the case, Ni ₅₀ Ti ₃₅ Hf ₁₂ when the M _3, Ni ₅₀ Ti ₃₈ XRD in the case of Hf ₁₂ is confirmed. In FIG. 4D, a pattern of a partially crystallized state appears in all four XRDs. When the second and third XRDs shown in FIG. 4D are compared with those in FIG. 4C, when M is out of the range of 5 to 10, It can be confirmed that the alloy is partially crystallized. In addition, when the first and fourth XRDs shown in FIG. 4D are compared with the case of FIG. 4C, even when the Ti is out of the range of 25 to 35 and only the ternary alloy of Ni-Ti-Hf is formed, It was confirmed that this was partially crystallized.

Therefore, the composition ratio of the Ni-Ti-Hf-M shape memory alloy Ni _a Ti _b Hf _c M _d for use in the probe tip according to the present invention is such that a is from 40 to 50, b is from 25 to 35 (a + b + c + d = 100), the shape memory alloy of the Ni-Ti-Hf-M type is an amorphous precursor for obtaining nanocrystalline grains Can be used.

On the other hand, the composition ratio of the shape memory alloy using the aforementioned Ni-Ti-Hf-M amorphous precursor can be similarly applied to the amorphous alloy. As described above, the composition ratio of the shape memory alloy or the amorphous alloy described in terms of atomic ratios may include 28 to 45 wt% of Ni, 14 to 26 wt% of Ti, 22 to 42 wt% of Hf, the remainder M and unavoidable impurities , M may be selected from Zr, Pd, Pt, Au, Al, Fe, Cu, Sn, Cr and V.

Atomic ratio (at.%) Weight ratio (wt.%) at least maximum at least maximum Ni 40 50 28 45 Ti 25 35 14 26 Hf 10 20 22 42 M 5 10 Remainder Remainder

Hereinafter, for convenience of explanation, the composition ratio of the Ni-Ti-Hf-M alloy will be described by the atomic ratio.

Referring again to FIG. 3, in step S14, the amorphous (precursor) alloy cast in the preceding step S12 can be formed into a load of 100 MPa or less in the supercooled liquid phase region. In the case of a ternary shape memory alloy (for example, Ni ₅₀ Ti ₃₈ Hf ₁₂ ) in which other metals are added to ordinary Ni-Ti, in order to improve the shape memory characteristics by making crystal grains extremely fine, Should be done. As a result, the steps required to process the shape memory alloy having the finely grained crystal are complicated, and the manufacturing cost and time are increased.

On the other hand, in step S14, the molding process of the amorphous (precursor) alloy can be simplified and the manufacturing cost can be reduced by molding the cast amorphous (precursor) alloy in a supercooled liquid phase region at a remarkably low load of several MPa to several tens MPa. Through this molding process, the probe tip according to the embodiments of the present invention can be formed into a desired shape.

FIG. 5A is a graph showing super-plasticity characteristics in a supercooled liquid phase region according to a glass transition of a shape memory alloy included in a probe tip according to an embodiment of the present invention. FIG.

5A, the shape memory alloy included in the probe tip according to the present embodiment is a Ni-Ti-Hf-M alloy (M is a Ni-Ti- Hf). As the amorphous precursor alloy is glass transitioned, super plasticity is exhibited in the supercooled liquid phase region at a temperature range of about 400 ° C to about 550 ° C Can be confirmed. The temperature region in which such superplasticity characteristics appear can be used to shape the shape memory alloy according to the embodiments of the present invention into a desired shape.

Meanwhile, when the probe tip according to the embodiment of the present invention is a Ni-Ti-Hf-M type (M is a B2-B19 'phase formed of Ni-Ti-Hf as a solute element having negative mixing heat with Ni, Ti and Hf , The probe tip formed in the supercooled liquid phase region by steps S12 and S14 described above can be configured to be used by itself in the semiconductor inspection process. In this case, the amorphous alloy of Ni-Ti-Hf-M type is rapidly solidified and cast into an amorphous alloy containing the composition ratio of the above-mentioned atomic ratio (S12), and is molded into a supercooled liquid phase region at a load of 100 MPa or less (S14), and a probe tip can be manufactured. When such an amorphous alloy is prepared, the elastic strain of the probe tip is improved, the strength of the alloy contained in the probe tip is increased, and the resistance to plastic deformation can be increased. Thus, in the repeated inspection process of the semiconductor device, the elastic recovery property of the probe tip can be improved, and the life of the probe tip can be increased.

Referring again to FIG. 3, the probe tip is immersed in a solution of Ni-Ti-Hf-M (M is employed on B2-B19 'formed of Ni-Ti-Hf as a solute element having a negative mixed heat with Ni, Ti and Hf In step S16, the amorphous precursor alloy formed in step S14 can be crystallized by heating to a temperature exceeding the crystallization completion temperature in the case of the shape memory alloy containing nanocrystalline using amorphous precursor of the amorphous precursor. This crystallized Ni-Ti-Hf-M system (M is a metal that can be dissolved on B2-B19 'made of Ni-Ti-Hf as a solute element having negative mixing heat with Ni, Ti and Hf) The memory alloy may include submicrometer sized grains. For example, the Ni-Ti-Hf-M based shape memory alloy crystallized in this step may have a grain size of 1 nm or more and less than 1 占 퐉. As described above, since the shape memory alloy having ultra-fine crystal grains is produced, the shape recovery of the shape of the micro-formed probe tip applied to the miniaturized inspection touch pad of the semiconductor device is restored to its original shape even if it is distorted or deformed The characteristics can be improved.

FIG. 5B is a differential scanning calorimetry (DSC) graph showing the crystallization behavior of a shape memory alloy included in a probe tip according to an embodiment of the present invention. FIG. X-ray diffraction diagram of the crystallized shape memory alloy included in the probe tip according to the example.

Referring to FIG. 5B, when the shape memory alloy included in the probe tip according to the embodiments of the present invention includes a composition of Ni ₅₀ Ti ₃₃ Hf ₁₂ Zr ₅ or a composition of Ni ₅₀ Ti ₃₃ Hf ₁₂ Cu ₅ , It can be confirmed that when the amorphous precursor alloy is heated to about 0.33 K / s, it crystallizes in a temperature range of about 770 K to about 800 K. In this case, the crystallization completion temperature for heating the amorphous precursor alloy in step S16 may be about 800K. That is, in step S14, the amorphous precursor alloy formed at a relatively low load of less than 100 MPa can be crystallized to have a grain size of several to several hundred nanometers as heated to a temperature of 800 K or more at a rate of about 0.33 K / s.

Referring to FIG. 5C, when the probe tip according to an embodiment of the present invention is crystallized including the shape memory alloy of Ni ₅₀ Ti ₃₃ Hf ₁₂ Zr _5, the austenite phase and the martensite phase XRD. ≪ / RTI >

When the shape memory alloy thus produced is included in the probe tip, the distorted shape of the probe tip can be restored using the shape memory property of the shape memory alloy, which will be described with reference to FIGS. 6A, 6B and 7 More detailed description will be given.

How to recover shape of probe tip

6A and 6B are graphs of differential scanning calorimetry (DSC) graphs showing the change in the temperature of the phase transformation upon heating and cooling after crystallization, according to the alloy composition of the shape memory alloy included in the probe tip according to one embodiment of the present invention .

6A, when the shape memory alloy according to the present embodiment includes a Ni-Ti-Hf-Zr alloy (more specifically, Ni ₅₀ Ti ₃₃ Hf ₁₂ Zr ₅ ), the shape memory alloy is cooled A martensitic transformation in which a high temperature phase is transformed into a low temperature phase is called a martensitic transformation start temperature (Ms), and a temperature at which the transformation is terminated is called a martensitic transformation And the termination temperature (Mf).

On the other hand, when the shape memory alloy according to the present embodiment is heated, the low temperature phase is subjected to austensitic transformation into a high temperature phase. The temperature at which the transformation into the high temperature phase starts is called the austenite transformation start temperature (As) The termination temperature is referred to as an austenite transformation end temperature (Af).

In this case, at a temperature lower than the martensitic transformation end temperature (Mf), martensite is a stable phase. Accordingly, when the shape of the alloy is deformed due to the stress applied to the martensite, the alloy of the deformed shape can be transformed into the austenite phase by heating to the austenite transformation end temperature Af have. At this time, the shape memory alloy can be restored to the shape originally intended for molding, unlike the shape which was distorted below the martensitic transformation end temperature (Mf) as the austenite phase transformation was achieved. However, since the austenite phase is a stable phase at a high temperature, a stable austenite at a temperature equal to or higher than the austenite transformation end temperature (Af) is used as a stable phase at a low temperature such as an inspection environment of a semiconductor device, It is cooled to a temperature equal to or lower than the site transformation end temperature (Mf), and can be transformed into martensite, which is a low temperature stable phase. As described above, after the austenite phase transformation and the subsequent martensite phase transformation, the shape distorted by the stress applied at low temperature can be restored to the original shape.

6A and 6B, the shape memory alloy included in the probe tip according to the embodiments of the present invention has a composition (a + b + c + d = 100) of Ni _a Ti _b Hf _c M _d , Depending on the molar ratio (atm.%) Of the metal M, the austenite transformation temperature range and the martensitic transformation temperature range may vary. For example, if the proportion of the metal M in the composition (a + b + c + d = 100) of Ni _a Ti _b Hf _c M _d is relatively larger, the austenite transformation temperature range and the martensitic transformation temperature range , And can be shifted toward a higher temperature. Specifically, the martensitic transformation end temperature (Mf) of Ni ₅₀ Ti ₂₈ Hf ₁₂ Zr _{10 and} the martensite transformation end temperature (Mf) of Ni ₅₀ Ti ₃₃ Hf ₁₂ Zr ₅ are compared with the martensitic transformation end temperature (Mf) and the austenite transformation end temperature The austenite transformation end temperature (Af) is higher.

6A and 6B, the shape memory alloy included in the probe tip according to the present embodiment has _a composition (a + b + c + d = 100, a: not less than 40 and not more than 50) of Ni _a Ti _b Hf _c M _d , b is not less than 25 and not more than 35, c is not less than 10 and not more than 20, d is not less than 5 and not more than 10). However, the metal M is not limited to Zr, and M may be any metal selected from the group consisting of Zr, Pd, Pt, Au, Al, Fe, Cu, Sn, . In FIG. 6B, a graph of a differential scanning calorimetry analysis for the case where the composition of the shape memory alloy is a ternary system of Ni-Ti-Hf (that is, the molar ratio of Zr is 0 atm.%) Is also shown for comparison. However, such a ternary shape memory alloy of Ni-Ti-Hf is partially crystallized during casting, so that uniform shape processing in the supercooled liquid phase region is limited. In order to have uniform ultrafine grains, The manufacturing process will be complicated and the cost will increase.

Referring again to FIGS. 6A and 6B, the composition of the shape memory alloy Ni _a Ti _b Hf _c Zr _d (a + b + c + d = 100, a is 40 or more and 50 or less, b is 25 or more and 35 , C is 10 or more and 20 or less, d is 5 or more, and 10 or less), when Zr is contained at 10 atm.%, The amount of Zr is not more than 5 atm.% For austenite transformation and martensite transformation The start temperature and the end temperature are higher. Thus, the heating and cooling for recovering the original shape using the shape memory property of the shape memory alloy can be performed at a higher temperature.

Thus, the composition (a + b + c + d = 100, a is not less than 40 and not more than 50, b is not less than 25 and not more than 35, c is not less than 10 and not more than 20) of Ni _a Ti _b Hf _c M _d of the shape memory alloy. , D is 5 or more, and 10 or less) in the range of 5 atm.% To 10 atm.%, It is possible to apply the shape memory alloy to a part to be applied at various processing temperatures . In the embodiments of the present invention, the shape memory alloy having such a composition is applied to the probe tip of the probe card used in the inspection process of the semiconductor device. That is, as the probe tip is repeatedly contacted with the contact pads in the inspection process of the semiconductor device, the shape of the probe tip may be deformed differently from the original shape. By using the shape memory property of the shape memory alloy, Can be corrected to the shape of FIG. A method of restoring the distorted shape of the probe tip will be described in more detail with reference to FIG.

7 is a flowchart illustrating a procedure of a shape recovery method of a probe tip according to an embodiment of the present invention.

Referring to FIG. 7, a method for recovering a shape of a probe tip according to the present embodiment includes separating a probe tip from a probe card (S22), heating the probe tip to a predetermined first temperature or higher (S24) Cooling the probe tip to a predetermined second temperature or lower (S26), and reassembling the cooled probe tip to the probe card (S28).

In step S22, the probe tip can be separated from the probe card. Since the probe card is made up of various parts such as a probe tip, a printed circuit board, a probe head, etc., other parts may be damaged if heated to a high temperature to restore shape memory characteristics of the probe tip. Therefore, it is desirable to separate the probe tip from the probe card and process the subsequent heating and cooling process only for the probe tip. At this time, the separated probe tip may have an at least partially distorted shape by being repeatedly contacted and pressed against the contact pads of the semiconductor device in the inspection process of the semiconductor device, unlike the originally formed shape.

In step S24, the probe tip separated from the probe card can be heated to a predetermined first temperature or higher. Here, the predetermined first temperature is a temperature required to transform the shape memory alloy contained in the probe tip and having a martensitic phase as a low temperature stable phase into a high temperature stable phase austenite phase, that is, the austenite transformation end temperature (Af in FIG. 6A or Af in FIG. 6B). For example, if the shape memory alloy comprises a composition of Ni ₅₀ Ti ₃₃ Hf ₁₂ Zr ₅ , the first temperature (Af in FIG. 6A) may be about 400K. In this case, the probe tip may be heated at a rate of about 0.33 K / s. In another embodiment, if the shape memory alloy comprises a composition of Ni ₅₀ Ti ₂₈ Hf ₁₂ Zr ₁₀ , the first temperature (Af in FIG. 6B) may be about 650 K. In this case, the probe tip may be heated at a rate of about 0.67 K / s. In any case, the heating may be performed to a predetermined temperature below the melting point of the shape memory alloy.

At this time, the distorted shape of the probe tip can be restored to the shape originally produced, not distorted in the semiconductor inspection process, as the shape memory alloy is transformed into the austenite phase by the above heat treatment.

In step S26, the heated probe tip can be cooled to a predetermined second temperature or lower. Here, the predetermined second temperature is a temperature required to transform the shape memory alloy contained in the probe tip and having the austenite phase of the high temperature stable phase into the martensite phase of the low temperature stable phase, that is, the martensitic transformation end temperature 6a or Mf in Fig. 6B). For example, if the shape memory alloy comprises a composition of Ni ₅₀ Ti ₃₃ Hf ₁₂ Zr ₅ , the second temperature may be about 273 K. For example, if the shape memory alloy comprises a composition of Ni ₅₀ Ti ₂₈ Hf ₁₂ Zr ₁₀ , the second temperature may be about 450 K.

At this time, no additional external force acts on the shape memory alloy of the probe tip during the cooling process, and the already recovered shape can be substantially maintained.

In step S28, the cooled probe tip can be reassembled into the probe card. The probe tip including the shape memory alloy transformed into the martensite phase, which is a low temperature stable phase, may be cooled to, for example, 260 K or less in step S26. In this case, the probe card can be reassembled into the probe card only after waiting for the probe tip to rise to room temperature in accordance with the appropriate operating temperature of the probe card (for example, -5 ° C to 50 ° C).

8A and 8B are diagrams illustrating a secondary electron image of a shape memory alloy that may be included in a probe tip according to an embodiment of the present invention. FIG. 8B is an enlarged view of a portion of FIG. 8A.

8A and 8B, the shape memory alloy, which can be included in the probe tip according to the present embodiment, has a superfine shape through the molding using the super plasticity characteristic in the supercooled liquid phase region temperature range of the amorphous precursor Respectively. The shape memory alloy containing nanocrystalline particles produced by using such a characteristic makes it possible to manufacture a probe tip for inspection of ultra-miniaturized semiconductor devices in an ultra-fine shape. In addition, since the formed amorphous precursor is manufactured as a probe tip including nanocrystalline grains having shape memory characteristics through heat treatment at a crystallization temperature or higher, even if the shape of the probe tip is deformed or distorted by the inspection process, The shape of the probe tip can be recovered, and the reusability of the probe tip can be improved.

9A to 9D are TEM (transmission electron microscopy) images and SAD (selected area diffraction) patterns of a shape memory alloy that can be included in a probe tip according to an embodiment of the present invention. FIGS. 9A and 9C show a TEM image of a shape memory alloy that can be included in a probe tip according to an embodiment of the present invention, and FIGS. 9B and 9D show SAD patterns for the case of FIGS. 9A and 9C, respectively.

Referring to FIGS. 9A and 9B, in the case of the amorphous precursor alloy, the crystal grains are not observed in the TEM image, and the amorphous precursor alloy is in an amorphous state as a whole (gray portion excluding the upper right corner). In this case, in the SAD pattern, the diffraction of the irradiation light due to the amorphous specimen is confirmed as a continuous linear shape (specifically, a ring shape).

Referring to FIGS. 9C and 9D, in the case of a nanocrystalline shape memory alloy obtained by heat-treating an amorphous precursor according to an embodiment of the present invention, fine grains having a size of several nanometers are confirmed in a TEM image. Also, in the SAD pattern, diffracted light due to these nanocrystalline grains is identified in a dispersed spot form.

Therefore, by applying the nanocrystalline shape memory alloy using the amorphous precursor alloy according to the embodiments of the present invention to the probe tip, even if the shape of the finely shaped probe tip is distorted or deformed, the shape memory Characteristics can be used to easily recover the probe tip.

As described above, according to the present invention, even if the shape of the probe tip that can be used in the inspection process of the semiconductor device is deformed or distorted by the pressure repeatedly inspected by the repeated inspection process, the distorted shape can be recovered and reused Thus, the cost required for the inspection process of the semiconductor device can be reduced.

In addition, the shape of the probe tip can be easily restored by a simple heat treatment without using a rigid processing method, thereby increasing the reusability of the probe tip and reducing the overall cost associated with the inspection process of the semiconductor device.

It should be noted that the embodiments of the present invention disclosed in the present specification and drawings are only illustrative of specific examples for the purpose of understanding and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that other modifications based on the technical idea of the present invention are possible in addition to the embodiments disclosed herein.

11: printed circuit board
13: Conductive elastic connecting pin
15: probe head
17: Probe tip
17a:
17b:
21, 23, 25: reinforced plate
41, 43, 45: fixing member

Claims (17)

A tip including a conductive material and configured to contact an inspection pad of a semiconductor device; And
And a body portion connected to the distal end portion and configured to transmit an electric signal to the distal end portion,
The conductive material may include,
Ni _a Ti _b Hf _c M _d wherein a is not less than 40 and not more than 50, b is not less than 25 and not more than 35, c is not less than 10 and not more than 20, d is not less than 5 and not more than 10 And M can be solubilized on B2-B19 'consisting of Ni-Ti-Hf as a solute element having a negative mixing column with Ni, Ti and Hf, wherein a + b + c + Metal), the nanocrystalline shape memory alloy comprising an amorphous precursor. The method according to claim 1,
M of the shape memory alloy is represented by the following formula:
Wherein the amorphous precursor is a metal selected from the group consisting of Zr, Pd, Pt, Au, Al, Fe, Cu, Sn, Cr and V. The method according to claim 1,
Wherein the shape memory alloy comprises crystal grains having a size of greater than or equal to 1 nm and less than 1 < RTI ID = 0.0 > um. ≪ / RTI > The method according to claim 1,
Wherein the shape memory alloy is configured to recover its shape in the range of 400 K or more and 650 K or less. A tip including a conductive material and configured to contact an inspection pad of a semiconductor device; And
And a body portion connected to the distal end portion and configured to transmit an electric signal to the distal end portion,
The conductive material may include,
Ni _a Ti _b Hf _c amorphous alloy represented by M _d (stage, a is at least 40 and less than 50, b is at least 25, 35 or less, c is 10 or more and 20 or less, d is at least 5 and not more than 10 Wherein M is a solute element having a negative mixing column with Ni, Ti and Hf, and a metal which can be solubilized on B2-B19 'formed of Ni-Ti-Hf, wherein a + b + c + d = Lt; RTI ID = 0.0 > amorphous < / RTI > alloy. 6. The method of claim 5,
The M of the amorphous alloy is,
Wherein the amorphous alloy is a metal selected from the group consisting of Zr, Pd, Pt, Au, Al, Fe, Cu, Sn, Cr and V. 6. The method according to claim 1 or 5,
And the tip portion and the body portion are integrally formed. 6. The method according to claim 1 or 5,
And the distal end portion is configured to be electrically connected to the body portion and to be detachable from the body portion. A printed circuit board including a circuit pattern;
A probe head electrically connected to the printed circuit board; And
And a plurality of probe tips electrically connected to the circuit patterns, the probe tips being disposed on the probe head so as to protrude from opposite surfaces of the opposite surfaces of the printed circuit board,
Each of the probe tips
Ni _a Ti _b Hf _c M _d wherein a is not less than 40 and not more than 50, b is not less than 25 and not more than 35, c is not less than 10 and not more than 20, d is not less than 5 and not more than 10 , a + b + c + d = 100, and M is a metal that can be solidified on B2-B19 'consisting of Ni-Ti-Hf as a solute element having a negative mixing column with Ni, Ti and Hf ). ≪ / RTI > 10. The method of claim 9,
The M of the alloy is,
Wherein the metal is a metal selected from the group consisting of Zr, Pd, Pt, Au, Al, Fe, Cu, Sn, Cr and V. 10. The method of claim 9,
Wherein the alloy is a shape memory alloy comprising crystal grains having a size of 1 nm or more and less than 1 占 퐉. 10. The method of claim 9,
Wherein the probe tip is configured to be removable relative to the probe head. 10. The method of claim 9,
Wherein at least a portion of the probe tip is configured to recover its shape in the range of greater than 400K and less than 650K. 14. The method of claim 13,
Wherein a portion of the probe tip configured to recover the shape is a tip portion of the probe tip. (a) separating the probe tip from the probe card;
(b) heating the probe tip to a predetermined first temperature;
(c) cooling the probe tip to a second predetermined temperature; And
(d) reassembling the probe tip to the probe card,
Wherein the probe tip is _a shape memory alloy represented by Ni _a Ti _b Hf _c M _d wherein a is greater than or equal to 40 and less than or equal to 50, b is greater than or equal to 25 and less than or equal to 35, c is greater than or equal to 10 and less than or equal to 20, B19 'composed of Ni-Ti-Hf as a solute element having a negative mixing sequence with Ni, Ti and Hf, and satisfying a + b + c + d = 100, Which is a metal that can be employed,
Wherein the first temperature is greater than or equal to 400 K and less than or equal to 650 K, and the second temperature is greater than or equal to 273 K and less than or equal to 450 K. A method of recovering shape of a probe tip comprising a nanocrystalline shape memory alloy using an amorphous precursor. 16. The method of claim 15,
M of the shape memory alloy is represented by the following formula:
Wherein the amorphous precursor is a metal selected from the group consisting of Zr, Pd, Pt, Au, Al, Fe, Cu, Sn, Cr and V. 16. The method of claim 15,
Wherein the shape memory alloy comprises a nanocrystalline shape memory alloy using an amorphous precursor comprising crystal grains having a size of 1 nm or more and less than 1 占 퐉.

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