JP2001516812A - 金属被覆物を穏やかに熱処理することにより改良された材料特性を備える構造を製造する方法 - Google Patents

金属被覆物を穏やかに熱処理することにより改良された材料特性を備える構造を製造する方法

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Publication number
JP2001516812A
JP2001516812A JP2000511937A JP2000511937A JP2001516812A JP 2001516812 A JP2001516812 A JP 2001516812A JP 2000511937 A JP2000511937 A JP 2000511937A JP 2000511937 A JP2000511937 A JP 2000511937A JP 2001516812 A JP2001516812 A JP 2001516812A
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Japan
Prior art keywords
coating
additive
deposit
shaped deposit
metal
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Pending
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JP2000511937A
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English (en)
Japanese (ja)
Inventor
チェン，ジミー，クオ−ウェイ
エルドリッジ，ベンジャミン，エヌ
ドザイアー，トーマス，エイチ
イェー，ジュンエ，ジェイ
ハーマン，ゲイル，ジェイ
ハンドロス，イゴー，ワイ
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フォームファクター，インコーポレイテッド
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Publication of JP2001516812A publication Critical patent/JP2001516812A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
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    • H01L2924/30107—Inductance
JP2000511937A 1997-09-17 1998-06-11 金属被覆物を穏やかに熱処理することにより改良された材料特性を備える構造を製造する方法 Pending JP2001516812A (ja)

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Cited By (8)

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JP2006249535A (ja) * 2005-03-11 2006-09-21 Furukawa Electric Co Ltd:The 相分離を利用した分離相、ナノ構造素子及びナノ構造体の製造方法
JP2008524010A (ja) * 2004-12-17 2008-07-10 インテグラン・テクノロジーズ・インコーポレーテッド 微細粒金属およびポリマー材料を含む物品
JP2010505130A (ja) * 2006-09-27 2010-02-18 フォームファクター， インコーポレイテッド 千鳥状の取り付けパターンを有する単一支持構造体のプローブ群
US8052810B2 (en) 2003-04-16 2011-11-08 Sumitomo Electric Industries, Ltd. Metal structure and fabrication method thereof
WO2012063920A1 (fr) * 2010-11-11 2012-05-18 日立金属株式会社 Procédé de production d'une feuille d'aluminium
JP2015002103A (ja) * 2013-06-17 2015-01-05 名古屋メッキ工業株式会社 電子機器のろう付け接続部
KR101748082B1 (ko) 2016-05-18 2017-06-16 세종대학교산학협력단 비정질 전구체를 이용한 나노결정립 형상기억합금 또는 비정질 합금을 포함하는 프로브 팁, 이를 포함하는 프로브 카드 및 이의 형상 회복 방법
KR102409029B1 (ko) * 2022-04-12 2022-06-14 이시훈 프로브 핀

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US6640432B1 (en) 2000-04-12 2003-11-04 Formfactor, Inc. Method of fabricating shaped springs
US7458816B1 (en) 2000-04-12 2008-12-02 Formfactor, Inc. Shaped spring
CN100339985C (zh) * 2000-04-12 2007-09-26 佛姆法克特股份有限公司 成形弹簧以及制造和使用成形弹簧的方法
EP1398831A3 (fr) * 2002-09-13 2008-02-20 Shipley Co. L.L.C. Formation d'espaces d'air
US7521128B2 (en) * 2006-05-18 2009-04-21 Xtalic Corporation Methods for the implementation of nanocrystalline and amorphous metals and alloys as coatings
US9714729B2 (en) * 2011-11-30 2017-07-25 Corning Incorporated Complex structures in refractory bodies and methods of forming
JP5077479B1 (ja) * 2011-12-15 2012-11-21 オムロン株式会社 コンタクトおよびこれを用いた電子部品
FR3041147B1 (fr) 2015-09-14 2018-02-02 3Dis Tech Procede d'integration d'au moins une interconnexion 3d pour la fabrication de circuit integre
US11015255B2 (en) * 2018-11-27 2021-05-25 Macdermid Enthone Inc. Selective plating of three dimensional surfaces to produce decorative and functional effects
CN113005490A (zh) * 2021-03-16 2021-06-22 昆明理工大学 一种通过热处理提高纳米晶镍腐蚀性能的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1696093A1 (de) * 1968-02-03 1971-11-04 Draht Und Federnwerke Veb Verfahren zur Erhoehung der Dauerfestigkeit oberflaechenbehandelter Federn
JPH02221377A (ja) * 1989-02-22 1990-09-04 Toyota Motor Corp Ｔｉ合金製コイルバネ
EP1408337A3 (fr) * 1994-11-15 2007-09-19 FormFactor, Inc. Carte à sondes

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8052810B2 (en) 2003-04-16 2011-11-08 Sumitomo Electric Industries, Ltd. Metal structure and fabrication method thereof
JP2008524010A (ja) * 2004-12-17 2008-07-10 インテグラン・テクノロジーズ・インコーポレーテッド 微細粒金属およびポリマー材料を含む物品
JP2006249535A (ja) * 2005-03-11 2006-09-21 Furukawa Electric Co Ltd:The 相分離を利用した分離相、ナノ構造素子及びナノ構造体の製造方法
JP2010505130A (ja) * 2006-09-27 2010-02-18 フォームファクター， インコーポレイテッド 千鳥状の取り付けパターンを有する単一支持構造体のプローブ群
WO2012063920A1 (fr) * 2010-11-11 2012-05-18 日立金属株式会社 Procédé de production d'une feuille d'aluminium
JP5516751B2 (ja) * 2010-11-11 2014-06-11 日立金属株式会社 アルミニウム箔の製造方法
US9267216B2 (en) 2010-11-11 2016-02-23 Hitachi Metals Ltd. Method for producing aluminum foil
JP2015002103A (ja) * 2013-06-17 2015-01-05 名古屋メッキ工業株式会社 電子機器のろう付け接続部
KR101748082B1 (ko) 2016-05-18 2017-06-16 세종대학교산학협력단 비정질 전구체를 이용한 나노결정립 형상기억합금 또는 비정질 합금을 포함하는 프로브 팁, 이를 포함하는 프로브 카드 및 이의 형상 회복 방법
KR102409029B1 (ko) * 2022-04-12 2022-06-14 이시훈 프로브 핀

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CN1278308A (zh) 2000-12-27
EP1023469A1 (fr) 2000-08-02

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