WO2003081725A2 - Ressort de contact miniaturise - Google Patents

Ressort de contact miniaturise Download PDF

Info

Publication number
WO2003081725A2
WO2003081725A2 PCT/US2003/008520 US0308520W WO03081725A2 WO 2003081725 A2 WO2003081725 A2 WO 2003081725A2 US 0308520 W US0308520 W US 0308520W WO 03081725 A2 WO03081725 A2 WO 03081725A2
Authority
WO
WIPO (PCT)
Prior art keywords
core
film
substrate
spring
springs
Prior art date
Application number
PCT/US2003/008520
Other languages
English (en)
Other versions
WO2003081725A3 (fr
WO2003081725B1 (fr
Inventor
Syamal Kumar Lahiri
Frank Swiatowiec
Fu-Chiung Chong
Sammy Mok
Erh-Kong Chieh
Roman L. Milter
Joseph M. Haemer
Chang-Ming Lin
Yi-Hseng Chen
David Thanh Doan
Original Assignee
Nanonexus, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/178,103 external-priority patent/US6917525B2/en
Priority claimed from PCT/US2002/026785 external-priority patent/WO2003018865A1/fr
Priority claimed from US10/390,994 external-priority patent/US7137830B2/en
Priority claimed from US10/390,098 external-priority patent/US6943149B2/en
Application filed by Nanonexus, Inc. filed Critical Nanonexus, Inc.
Priority to DE10392441T priority Critical patent/DE10392441T5/de
Priority to JP2003579319A priority patent/JP2006508495A/ja
Priority to AU2003218288A priority patent/AU2003218288A1/en
Priority to KR10-2004-7014722A priority patent/KR20040093740A/ko
Publication of WO2003081725A2 publication Critical patent/WO2003081725A2/fr
Publication of WO2003081725A3 publication Critical patent/WO2003081725A3/fr
Publication of WO2003081725B1 publication Critical patent/WO2003081725B1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06716—Elastic
    • G01R1/06727—Cantilever beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06755—Material aspects
    • G01R1/06761—Material aspects related to layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07357—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with flexible bodies, e.g. buckling beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/02—Arrangements of circuit components or wiring on supporting structure
    • H05K7/10—Plug-in assemblages of components, e.g. IC sockets
    • H05K7/1053—Plug-in assemblages of components, e.g. IC sockets having interior leads
    • H05K7/1061—Plug-in assemblages of components, e.g. IC sockets having interior leads co-operating by abutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/018—Switches not provided for in B81B2201/014 - B81B2201/016
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0104—Zirconium [Zr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01044—Ruthenium [Ru]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01045—Rhodium [Rh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01076—Osmium [Os]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01077—Iridium [Ir]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0494—4th Group
    • H01L2924/04941—TiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70—Coupling devices
    • H01R12/71—Coupling devices for rigid printing circuits or like structures
    • H01R12/712—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit
    • H01R12/716—Coupling device provided on the PCB
    • H01R12/718—Contact members provided on the PCB without an insulating housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/22—Contacts for co-operating by abutting
    • H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4092—Integral conductive tabs, i.e. conductive parts partly detached from the substrate

Definitions

  • This invention relates generally to the highly miniaturized springs. More particularly, this invention relates to a family of miniaturized contact springs and a family of methods for increasing the yield strength and fatigue strength of these springs.
  • Miniaturized springs have been widely used as electrical contacts to contact pads or I/O terminals on integrated circuits, PCB-s, interposers, space transformers and probe chips for purposes such as testing, burn-in and packaging because even arrays of such miniaturized springs can be fabricated with a pitch of less than 10 ⁇ m.
  • a miniaturized stress metal film spring usually patterned by photolithography, comprises a fixed portion, also called anchor portion, attached to a substrate and a lifted portion, also called free portion, initially attached to the substrate, which upon release extends away from the substrate forming a three dimensional structure as a result of inherent stress gradient in the spring.
  • FIG. 1 a A typical embodiment of stress metal spring is schematically shown in FIG. 1 a, which comprises an anchor portion 101 associated with an electrical contact or terminal 102 attached to a substrate or electrical component 103, and a free portion 104 with a spring tip 105. Examples of such structures are disclosed in U.S. Patent No. 5,613,861 (Smith) and application PCT /US00/21012 (Chong, Mok).
  • springs include discrete springs, fabricated individually or in a group and subsequently mounted on a substrate, such as those used in wafer test or burn- in assembly, or those comprising integrated solid-state devices such as semiconductor devices. Still other types of such springs are those cantilever types of springs, which are fabricated en masse on a substrate using photolithography, as mentioned in the patent literature such as PCT 01/48818, PCT W097/44676, US Patent 6,184,053, and PCT WO01/09952. Some of these springs are fabricated individually or in a group on a sacrificial substrate and then mounted onto substrates used in the wafer test or burn-in assemblies, or onto those comprising semiconductor devices. FIG.
  • 1 b is a schematic cross view of a typical photo- lithographically patterned freestanding cantilever spring fabricated on sacrificial layers, which comprises a base region 201 at one end that is attached to an electrical contact pad 202 of a substrate 203, a contact tip region 204 at the other end of the spring, and the central main body 205 of the spring connecting the base 201 and the contact tip region 204.
  • the problem in this kind of springs is that they are too long. Shorter and smaller springs are desirable for testing and burn-in of some of the current and next generations of integrated circuits, which comprise contact terminal pads with very small pitch, 20-50 ⁇ m, for example.
  • the method described in application also has an additional problem in controlling lift height after plating.
  • One of the purposes of having a freestanding spring is to provide a framework or structure to support the thicker plated metal. If one plates a spring on only one side, the spring curves to a different lift height based on the stress in the plated film. If the film is tensile it curves up and if it is compressive it pushes it down. Both of these stress conditions are difficult to control for the tolerances and spring lift uniformity needed to test ICs.
  • compressive springs are stronger than tensile springs and the spring with a compressive plated film loses lift height to the point that there is not enough compliance for it to still be a useful probe.
  • One method to build the probe in application WO 01/48870 is to assemble a tip on the plated spring and assemble the spring fabricated on a sacrificial substrate to a second interconnect substrate.
  • the assembly process adds positional placement errors and is more expensive to manufacture than a fully integrated connection button tip as described in the invention herein.
  • the invention herein comprises several means to circumvent the problems associated with the above two methods and provides solutions that allow manufacturing of arrays of springs suitable for meeting the stringent requirements of wafer level IC testing.
  • the invention allows fabrication of arrays of springs with reasonably uniform lift height and properties, as well as durability. For example, it teaches the practice of enveloping the entire spring core, both freestanding and anchor portions, with electrodeposited films with a balanced stress that allows maintenance of spring heights with appropriate uniformity after electrodeposition. In another teaching, it shows a method to plate the springs selectively without the use of any photoresist mask.
  • the miniaturized contact springs are subjected to a large number of contact operations during testing which subject the springs to various levels of stresses including cyclic stresses. Also, in packages that use contact springs to join two components, such as chips and chip carriers, the springs are subjected to stresses during testing and operation. The springs are required to withstand such stresses without failure.
  • the miniaturized springs such as those with a size of around 400 ⁇ m x 60 ⁇ m x 20 ⁇ m, start to fail, i.e. being plastically deformed and/or fractured, typically after 10,000 touchdowns, where the contact force exceeds about 1gf. A major reason of the failure is that the resulting alternating stresses exceed fatigue strength of the spring material.
  • the fatigue strength indicates the alternating stress level at which a material can withstand a specified number of cycles. It is typically some fraction of a material's yield strength, which corresponds to the onset of plastic deformation, i.e. instantaneous permanent deformation. Because a force exceeding about 1 gf is usually required to make good reproducible contacts on aluminum with low contact resistance, as observed in our experiment, the resistance of the springs to failure must therefore be significantly increased to improve the performance and quality of the springs. Springs with larger cross-sections can withstand similar or larger force without failure because the resulting stresses are lower, but they limit the pitch at which springs can be built.
  • contact springs are required to make contacts with the device terminals at an elevated temperature, for example around 100 -C. Such contacts may also be required to allow passage of a relatively high current, for example 250-500 mA, during the operation. Under this condition the contact resistance should be quite low, for example 0.1 milli-ohm, so that the contact tip region of the spring may not get damaged by overheating.
  • One way to achieve the low contact resistance is to increase the contact force, by increasing the thickness of the springs. However, a higher contact force increases the stress developed in the body of the spring, particularly near the base region, and thus increases the probability of early spring failure during repeated touchdowns.
  • contact tip structure should preferably be comprised of materials that do not have strong adherence to the contact pads or terminals. Therefore, what is desired is a mechanism for maximizing yield strength and fatigue strength of the miniaturized springs within the miniaturization requirement.
  • a method to fabricate springs with high resistance to compliant stress that results in uniform spring height and provides for a durable tip structure is desired.
  • This invention provides a solution to increase the yield strength and fatigue strength of miniaturized contact springs, which can be fabricated in arrays with ultra-small pitches. It also discloses a solution to minimize adhesion of the contact pad materials to the spring tips upon repeated contacts without affecting the reliability of the miniaturized springs. In addition, the invention also presents a solution to fabricate the springs that allow passage of relatively higher current without significantly degrading their lifetime. Also, the invention provides a solution for fabricating robust springs for joining die-bonding terminals to corresponding input-output pads of a substrate comprising an inorganic or organic material for reliable package fabrication. The joining can be facilitated, for example, through the use of solder or conducting adhesives including anisotropically conducting adhesive films.
  • the stress metal spring according to this invention comprises a multilayer film structure.
  • the thin films have substantially greater yield strength and fatigue strength than the corresponding bulk materials, and thus these springs allow repeated touchdowns during testing or burn-in without any significant plastic deformation, if any.
  • Deposition of compressively stressed films onto the core films is found useful to increase the spring lifetime. This also allows fabrication of stress metal springs capable of applying large force at the electrical contact pad or terminal.
  • Thin films are deposited with graded transitions in composition, either continuous or in fine discrete steps, across an interface between two different materials, so that the elastic modulus increases, in general, monotonically with depth from the spring surface to the spring core.
  • the resulting springs exhibit a significant increase in lifetime during repeated touchdowns.
  • Suitable materials and/or process are found useful to increase the interface robustness in the multilayer structures.
  • Materials of similar lattice parameters are preferably used in the adjacent films and amorphous or nano-crystalline films are used as interfaces.
  • An interface can be made by either "phasing-in" the materials of two adjacent layers or by using an alloy of the materials of two adjacent layers.
  • the thickness of the free portion of the thin film is preferably within the range of 4-35 ⁇ m, which allows reliable and low electrical contact resistance between the spring tips and contact pads or electrical terminals comprised of different materials.
  • At least one high thermal conductivity film in the multilayer film structure is preferably used for dissipating heat during testing or burning-in at a relatively high current.
  • Alteration of the process parameters during deposition of the films constituting the spring structure is found useful to enhance spring quality and reliability.
  • thin films comprising the coatings of the spring core are deposited with suitable microstructural features, such as ultra-small grain size, e.g. less than 200 nm, for increasing both the yield and fracture toughness of the spring.
  • the force used to make good electrical contacts between the springs and the contact pads is substantially reduced.
  • a suitable range of force for contact on aluminum (Al) is 0.8-10.Ogf.
  • the contact pads made of gold, copper or solder the force to make good electrical contacts is much smaller.
  • the low force photolithographically patterned miniaturized contact springs greatly facilitate the construction of probe card assemblies including probeChips,/.e. substrates with attached probe springs for making contacts with IC terminals, interposers and assembly fixtures for testing and burn-in, as well as packaging, The assembly is greatly simplified by the use of these low force springs, as bending, warping and alignment problems are minimized.
  • the method to improve the lifetime of the springs includes solutions to minimize surface roughness.
  • the free portion of the spring is in a tapered shape.
  • the invention also provides a less expensive and effective solution to electrodeposit overlying films onto the stress metal springs, circuit traces and electrical contact pads without using any mask.
  • the spring tip region also called a buttoned spring tip, is selectively coated using a lithographic process with a material that minimizes adhesion of the contact pad materials during repeated touchdowns. The thickness of the spring tip region is built up prior to the release of the springs from the substrate.
  • a photoresist is applied and patterned to allow selective coating of the tip region, after the spring is lifted and electroplated as required, with a material that minimizes adhesion of the contact pad materials during repeated touchdowns.
  • the solutions for stress metal springs can be applied to other types of cantilever springs.
  • One embodiment is applicable to other cantilever springs, with or without a buttoned contact structure at the spring contact tip region.
  • Multilayer films are selected and deposited in a sequence following a specific principle that results in the fabrication of robust high performance springs with high durability and increased lifetime. The principle requires that the films are to be selected and sequentially deposited in such a way that the elastic modulus of the outer layers of the springs are lower than that of the interior layers and there is a progressive increase in the elastic modulus from the surface layer to the innermost layer of the springs.
  • thin films comprising non - stress metal cantilever springs are deposited with suitable microstructural features, such as ultra-small grain size, e.g. less than 200 nm, for increasing both the yield and fracture toughness of the spring.
  • the non- stress metal cantilever spring layer is comprised of at least one deposited film layer with a built-in compressive stress. Following the same principles, shorter springs with increased robustness and higher strength can be fabricated.
  • the invention is applicable to testing and burn-in of various types of solid state devices, such as silicon and lll-V devices, display devices, surface acoustic devices, micro-electromechanical (MEMS) devices.
  • solid state devices such as silicon and lll-V devices, display devices, surface acoustic devices, micro-electromechanical (MEMS) devices.
  • MEMS micro-electromechanical
  • the invention is also applicable to packages in which electrical terminals of electronic components are bonded to corresponding contact pads of an adjacent substrate.
  • FIG. 1 a is a schematic diagram illustrating a typical stress metal film spring according to the prior art
  • FIG. 1 b is a schematic diagram illustrating a typical cantilever spring according to the prior art
  • FIG. 2 is a diagram illustrating the stress-strain curves of thin films v. corresponding bulk materials
  • FIG. 3a and FIG. 3b are schematic diagrams illustrating a stress metal film spring with a multilayer structure according to the invention
  • FIG. 4 is a schematic diagram showing a stress metal film spring with a multilayer structure comprising at least one high thermal conductivity film according to one embodiment of the invention
  • FIG. 5 is a schematic diagram illustrating a solution for spring design and fabrication where a metal filled via, an insulated polymer film and an electrical trace are used according to one embodiment of the invention
  • FIG. 6 is a schematic diagram of a stress metal film spring formed over a via providing electrical connection to the backside of substrate according to the invention
  • FIG. 7 is a schematic diagram of a stress metal film spring formed and subsequently plated to improve robustness according to the invention.
  • FIG. 8 is a schematic drawing of a plated stress metal film spring coated by photoresist according to the invention.
  • FIG. 9 is a schematic drawing of a plated stress metal spring coated by patterned photoresist, exposing the spring tip according to the invention.
  • FIG. 10 is a schematic drawing of a plated stress metal spring with contact tip material plated on the exposed portion of the tip according to the invention.
  • FIG. 11 is a schematic drawing of a plated stress metal spring with contact tip material after removal of photoresist according to the invention
  • FIG. 12a is a schematic diagram showing a stress metal film spring with varying width in tapered shape according to one embodiment of the invention
  • FIG. 12b is a schematic diagram showing a stress metal film spring in tapered shape wherein the tip area is coated with a contact material according to one embodiment of the invention
  • FIG. 13 is a schematic drawing of plated stress metal springs with contact tip material in an interleaved array according to the invention.
  • FIG. 14a and FIG. 14b are schematic diagrams illustrating two cross sectional views of typical freestanding non-stress metal cantilever springs according to one embodiment of the invention.
  • a stress metal film typically comprises a strong core film composed of materials, such as molybdenum (Mo) or its alloys, tungsten (W) or its alloys, with additional overlying film coatings, such as nickel or nickel-cobalt (Ni-Co) alloy films.
  • Some of these films are relatively thick, typically 4x10 3 to 10 4 nm in thickness, which is required in order to increase the force that needs to be applied by the spring to the contacting surface for establishing good electrical contact. High yield strength of such films is required for ensuring satisfactory performance of the springs.
  • the stress metal springs produced by this invention are batch fabricated, using thin film/IC or MEMS technology, on substrates or electrical components, the springs described herein are particularly suitable for testing, burning-in and packaging (including 3-dimensional packaging and chip to chip-carrier bonding) applications involving probe cards, interposers, space transformers, PCB-s, wafers, electronic components and microchips with highly miniaturized contact pads or I/O terminals with a pitch ranging 3-100 ⁇ m.
  • the existing technologies are mostly not suitable for such applications.
  • the dimensions of the corresponding springs or spring terminals are also very small, typically ranging from 10 to 1 ,000 ⁇ m in length, 3 to 500 ⁇ m in width, and 0.1 to 40 ⁇ m in thickness.
  • the curl radius of the lifted core is typically 20-2,000 ⁇ m. Note that the teachings of this invention can be used also to produce springs or spring terminals outside of the dimensional and pitch ranges indicated. Also note that the teachings of this invention can be applied to both the stress metal springs and any other miniaturized springs comprising thin films.
  • multiple layers of very thin films are used to fabricate the springs to increase the yield strength of thin film spring materials. This is particularly useful for building up the coating layers over the thin film spring core.
  • the stress-strain curves of thin films shown schematically in FIG. 2, are very different from those of the corresponding bulk materials.
  • the materials in thin films exhibit much higher yield strength, i.e. the films maintain their elasticity at a higher stress, and relatively smaller plastic deformation before failure, as compared to the same materials in bulk form.
  • the thin film yield strength is much closer to the theoretical strength of the material than the corresponding bulk material yield strength.
  • the films As the film thickness increases, when greater than about 2 ⁇ m, for example, the films increasingly exhibit bulk stress-strain characteristics. As a result, the elastic limit of thicker films is lower than that of thinner films. In addition, the grain size of very thin films is generally much smaller than the relatively thick films, which also results in an increase in both yield and fracture strengths. Thus, the springs with thinner films are more robust.
  • a discontinuity in the atomic arrangement is deliberately introduced at the interface between two adjacent films so that the two films retain their individual mechanical characteristics and the interface impedes defect propagation from one film to the other.
  • Altering the deposition parameters after a film is deposited to the required thickness is one way of achieving this.
  • Another way to engineer this interface is to sequentially deposit two different materials next to each other. This includes use of two different materials, e.g. Cu and Ni with close lattice parameters in two adjacent layers for enhancing the bonding at the interface. Note that this scheme also works if the lattice parameters of the two adjacent layers are not very close to each other. Using such a scheme, multiple layers of thin films can be deposited to build up the desired spring film thickness.
  • the top layer of the spring is preferably a thin film structure that resists environmental degradation during storage or operation and adhesion of the contacting material to the spring surface.
  • the embodiment is schematically shown in FIGs. 3a and 3b, wherein A, B, C etc. indicate different materials.
  • an asterisk is used to indicate the adjacent layer, e.g. A and A * .
  • the multilayer springs formed in this manner can be annealed at a relatively low temperature, if desired, for a short time, e.g. 150-C for 10 min to facilitate bonding between adjacent layers and relaxation of the internal stresses in the films to impart additional robustness in the spring.
  • the deposition condition may be altered to produce a non-crystalline or crystalline thin film, less than about 200nm, in between two relatively thicker, approximately ⁇ 2000nm, film layers in order to facilitate bonding between adjacent layers.
  • examples of such in-between material films are Au, Ag, Ni, Cu and etc.
  • the spring is comprised of a sputter deposited core of about 1-4 ⁇ m thick Mo-Cr films with a stress gradient across the thickness (compressive bottom to tensile top).
  • the multilayer thin films e.g. Ni or its alloy overlying the core are deposited on all sides of the core, after the free portion of the spring is released, using film deposition techniques such as electroplating techniques (dc and/or pulse deposition), to an overall spring thickness of about 18-35 ⁇ m.
  • the electrodeposition technique both electroplating and electroless, is a preferable technique, for coating the core film.
  • Pulse plating a method for electrodeposition, is particularly useful for the coating, as it tends to produce denser films.
  • Composition modulated electrodeposition techniques can also be used to deposit the multilayer films.
  • stress metal springs whether comprised of multilayer of very thin (less than about 2 ⁇ m thick) films or relatively thicker, e.g. greater than about 2 ⁇ m films, with a thickness of 1-45 ⁇ m for the free portion, are quite suitable for making good electrical contacts with various materials comprising electrical contact pads or electrical terminals on different substrates or electrical components.
  • a preferable thickness range for fabricating the free portion of the springs is 4-35 ⁇ m. Excellent electrical contacts (very low contact resistance) have been obtained between tips at the end of the free portions of these springs, with an appropriate thickness in this preferable range, and electrical contact pads or terminals, which contain mainly gold (Au), copper (Cu) or commonly used lead-free or lead-bearing solders or aluminum (Al).
  • the failure resistance of the springs is substantially increased by electrodepositing, e.g. by electroplating the films onto the core film in such a way that all or at least the relatively thick overlying films, specially those near the spring surfaces, remain under a compressive stress.
  • electrodepositing e.g. by electroplating the films onto the core film in such a way that all or at least the relatively thick overlying films, specially those near the spring surfaces, remain under a compressive stress.
  • the completed spring is designed to be pre-stressed.
  • both the overlying and core material should have high elastic limit that resists plastic deformation.
  • the interface between different film layers should also be strong.
  • the overlying film with compressive stress is comprised of nickel, with a thickness of about 10 ⁇ m on each side of a Mo-Cr core film.
  • the resulting spring withstood many touchdowns without any failure.
  • One of the reasons for spring failure is the development of high tensile stress in the spring surface as it is pressed to make contacts with electrical contact pads or terminals.
  • the fatigue strength of materials is, in general, lower under tensile mean stress than under compressive mean stress.
  • the described solution minimizes the development of tensile stress in spring surfaces when pressed into contact with contact pads or terminals, and thus increases the resistance of the spring to failure.
  • This scheme, and those to be described in the following paragraph, also allow fabrication and use of thin stress metal film springs with relatively large overall thickness that is useful for generating high contact force needed at the electrical contact pad or terminal for some applications.
  • the completed spring is designed to be pre-stressed.
  • Pre-stressing is preferably achieved by compressive stress.
  • the range can be low tensile stress to compressive stress, e.g. tensile 30 MPa to compressive 70 MPa. Stresses are different for different thickness of the Ni plating for the same additive concentration. For thinner films the stress is higher. For example, for 1.5 ⁇ m thick film the stress is about 70MPa compressive.
  • the range of compressive stress that can be produced in plated Ni springs with the same additive concentration is about 6-70MPa (compressive) for thicknesses ranging from 25-1.5 ⁇ m.
  • the stresses for various Ni film thicknesses can be tailored through variation of additive concentration.
  • Another effect of change in additive concentration in the plating solution is reflected on the grain size of the plated films.
  • the grain size was found to be one-fifth (20%) of the samples plated earlier with smaller additive concentration.
  • the smaller grain size increases the yield stress of thin films (d "1/2 dependence). This is an important contributing factor in increasing the lifetime of our springs during repeated touchdowns.
  • a preferred range of grain diameter in the film e.g. Ni that overlies the spring core is 3 - 500 nm, and a typical preferred value is 50 nm.
  • the plated overlying films seem to be stronger as the grains become more equiaxed, e.g. ratio of larger to smaller dimension of grains is less than 2.
  • selection of film materials for deposition of a multilayer stack of films is made in such a way that films with lower elastic modulus are deposited near the spring surface, and films with increasingly higher modulus are deposited towards the core.
  • films are selected and deposited over the core in such a way that it results in a reasonably continuous increase of the elastic modulus from the spring surface to the spring core, namely in graded deposition in compositions.
  • Graded transition in compositions and elastic modulus from the spring surface to the core can be used to distribute the stresses at critical locations, and thus suppress the onset of permanent damage.
  • the critical tensile stresses which results in the nucleation of damage at the surface, are lowered at the surface as the higher modulus beneath the surface spread the stresses from the surface to the interior of the spring. This reduces the probability of crack initiation at the spring surface during repeated touchdowns, and thus the spring lifetime is increased.
  • the spring surface layers i.e.
  • outer surfaces of the overlayer stack consists of palladium alloys (such as those comprising Ni, Co, or Pt), gold alloys (such as those comprising Ni or Co), Pt alloys etc.; whereas the film layers closer to the spring core, e.g. Mo-Cr, are comprised of nickel or Ni alloys, e.g. Ni-Co.
  • the spring lifetime is increased by depositing nickel or its alloy with higher elastic constant onto the core film, e.g. Mo-Cr followed by deposition of successive layers of overlying films that contain Ni with increasing amount of Pd.
  • the outer films in this case contain relatively high concentration of Pd, e.g.
  • the Pd concentration in Ni is changed continuously from the core to the surface.
  • the latter can be achieved through variation of deposition parameters of conventional deposition technique, e.g. electrodeposition, during the deposition process.
  • the core material can be a material with higher elastic modulus than that of other films.
  • Various material combinations can be used to fabricate the multilayer film stack over the stress metal spring core. These are applicable to both very thin (less than 2 ⁇ m) and relatively thick, e.g. 2 -20 ⁇ m, individual constituent films. Such combinations are selected from groups of materials including Ni, Au, Ag, Cu, Co, Rh, Ru, Pt, Os, Pd, TiN, W or their alloys, such as Ni-Co, Pd-Ni, Pd-Co, Co-Pt, Au-Pt, Pd-Rh, Ni-P, Ni-Mo, Ni-Co-Pd, Ni-Mo-W, Ni-P-W and etc.
  • Solid solutions comprising at least two materials, such as Ni with less than about 12% W, or Ni with 2% Mo, or Cu-Rh-Pd or Pd-Ni or Pd-Co, Ni-Co or Co-Pt and etc. are particularly good candidates to fabricate the multilayer thin film stack, as they enhance the mechanical properties of the film.
  • Multilayer films are particularly suitable for making electrical contacts with terminal/contact pads during testing and burn-in process that requires passage of a relatively high current.
  • a common practice in the industry is to make occasional probe contacts to terminal pads at a current level of 250-500mA. This often leads to contact failure because of excessive heat generated at the contact region. Modeling of heat flow has shown that the highest temperature is reached near the spring tip region. Melting of the spring tip regions has also been observed in some cases.
  • a good heat conducting film such as Cu with a typical thickness of about 0.75-2 ⁇ m, in the multilevel stack of films of which the spring is comprised, can overcome the problem. Presence of Cu allows the heat to be dissipated quickly from the tip region and thereby minimize the damage during testing or burn-in. Of course, different thicknesses, e.g. greater than 2 ⁇ m, of the good heat conducting films will also work for this purpose.
  • FIG. 4 is a schematic diagram showing such a spring finger that includes a Cu film for improved thermal conductivity.
  • Other high thermal conductivity materials can also be used instead, or in addition to Cu, for improving the heat dissipation from the spring tip. Examples are: Au, Ag, Al etc.
  • the films with high thermal conductivity can be deposited before or after the spring is lifted. If the film is electrodeposited after the lifting, the high conductivity film can be deposited all around the core film. If the film is to be deposited on one side of the spring, or only at and near the tip region, the deposition can be done before the spring is lifted and patterned.
  • the build up of high temperature near the spring tip region is minimized if the probe-tip to contact pad electrical contact resistance is minimized.
  • the reduction of the contact resistance can be achieved by increasing the force applied by the probe-tip onto the contact pad also.
  • the electrical contact resistance between the spring tip and contact pad or terminal is less than 1 ⁇ when the contact is reliable and stable.
  • a preferable range of values for good electrical contact and good heat dissipation is about ⁇ 0.1-0.2 Ohm.
  • the thin film springs can be strengthened against failure by strengthening the interfaces between different film layers against defect propagation and by enhancing good bonding between two adjacent film layers.
  • the interface between the core spring material Mo-Cr and an adjacent layer of Ni film can be significantly strengthened, and bonding between the two layers at the interface be made substantially stronger, by phasing-in Ni at the end of Mo-Cr deposition.
  • the phasing-in can be achieved as follows. Shortly before the end of Mo-Cr deposition, Ni deposition is initiated. Then the Mo-Cr deposition rate is gradually brought to zero, while adjusting the deposition parameters appropriately increases Ni deposition rate.
  • Ni or its alloy deposition on the core by other methods, such as eletrodeposition, Ni or its alloy is deposited on the Ni surface of the core.
  • eletrodeposition Ni or its alloy is deposited on the Ni surface of the core.
  • Such interface engineering can also be applied to enhance the interface quality between two adjacent electrodeposited film layers.
  • an alloy of A x B ⁇ can be deposited using suitable process parameters.
  • the deposition parameters are changed intermittently during deposition in order to improve the quality of the coating films. It is known that electrodeposition of relatively thick films of a material often shows increased porosity in the film layers near the top of the film typically at a thickness exceeding about 1.5-2 ⁇ m. Consequently, changing the film parameters, e.g. dc plating to pulse plating or changing the current density during deposition, improves the quality of the film significantly. As a result, the film becomes stronger and resists early failure during testing or operation. Variation of deposition parameters during electrodeposition can change the microstructures, e.g. grain size, and crystallographic structures of the deposits, as well as film stresses.
  • FIG. 5 is a schematic diagram illustrating a solution for stress metal spring design and fabrication according to another aspect of the invention, wherein 501 refers to an electrical pad, 502 to a metal filled via, 503 to an insulator film, such as a polymer film, 504 to an electrical trace, 505 to a release layer, 506 a plated film, 507 a spring core, 508 to a plated film at surface, and 509 to a substrate.
  • This design allows establishment of good electrical contacts at reduced force and thus results in a substantial increase in the resistance to failure during repeated touchdowns.
  • the fatigue life of a structure is a strong function of the applied stress.
  • the force should preferably be maintained within a range of about 0.8 to 10.0gf for effective electrical contact between these springs and Al. A higher force tends to damage the contact pads 501 , and a lower force fails to penetrate the surface oxide reproducibly.
  • the force required to make good electrical contacts is significantly smaller, for example 0.2 gf.
  • establishment of a good electrical contact with low contact resistance also allows testing of circuits or devices at a higher current without encountering significant degradation of spring quality due to high heat problem. Consequently, the probe springs with the structure shown in FIG. 5 are desirable for tests or burn-in requiring passage of higher current. Similar springs with multilayer structure comprised of very thin films, less than about 2 ⁇ m for example, are also suitable for such tests or burn-in that require passage of higher current.
  • interposers Another important benefit from low force contacts is related to the fabrication of interposers.
  • probe card assemblies often use interposers in between the ProbeChip (or space transformer) and load-board (PCB that is connected with the tester) to establish electrical connection between the IC to be tested and the tester.
  • Cantilever type of springs is attached to these interposers for facilitating electrical connection.
  • the force applied by each of these interposer springs is relatively high, e.g. 15-30 gf.
  • Interposers having miniaturized stress metal springs fabricated by the present invention can make electrical contacts with opposing contact terminals at a far lower force, e.g.
  • the contact terminals are generally comprised of materials other than aluminum, e.g. gold.
  • Such a small contact force can be applied by these springs consisting of only the core material, e.g MoCr, without any plating.
  • relatively thin layers of plating are preferred, e.g. with gold, in some applications for increasing electrical conductivity of the springs or the mechanical properties, e.g. wear resistance of the spring tips.
  • the total force applied by the interposers having thousands of springs is vastly reduced.
  • the thickness of the spring can increase the spring contact force on contact pads or electrical terminals.
  • Mathematical expressions are available to calculate the force as a function of spring dimensions.
  • the core material e.g. Mo-Cr
  • thickness is kept typically less than about 5-6 ⁇ m to facilitate lifting of the free portion of the spring following its patterning on the substrate.
  • Films are subsequently deposited onto the spring, e.g. by electrodeposition, to increase its thickness for applications requiring increased contact force. Deposition of additional films selectively onto the spring using photolithography or other methods is quite complex and costly due to the non-planar structure of the springs.
  • the electrical contact to the arrays of springs is made from the backside of the substrate 509 by blanket deposition of an electrically conducting thin film onto it or backside patterning the film to give better current density control.
  • the electrical continuity is established using a via, such as 502, through the substrate, which are filled with electrically conducting materials that are in electrical contact with the springs, adhesion layer 505, spring metal 507, traces, e.g. 504, or contact pads, e.g. 501.
  • Preferred substrates comprise inorganic materials such as ceramic, quartz, silicon, glass.
  • Other substrates comprising organic materials, such as polymer, epoxy, FR4 and polyimide can also be used within the scope of this invention.
  • An example of the latter group of substrates are printed circuit boards using FR4, Dupont's Thermount and Nelco's N4000.
  • this problem is eliminated by electrodepositing an envelope of material over the spring core without the use of any photoresist mask as illustrated in FIG.5.
  • the stresses on the two sides of the core spring are also reasonably balanced in this case, thereby minimizing the alteration in the spring lift height due to plating.
  • Maskless plating of the spring cores is thus very desirable for producing an envelope of electroplated films covering all core surfaces (and also other electrically conducting surfaces around the springs, if desired) using substrate through-vias to establish electrical contacts from the substrate-surface opposite to the surface where the springs are located.
  • Figure 6 shows the lifted spring prior to plating and Figure 7 shows the spring after plating.
  • Figure 6 shows the lifted spring prior to plating and Figure 7 shows the spring after plating.
  • Current supplies must be programmed to manage stress in the film as to compensate for changes in the spring thickness which reduce current density.
  • coating materials are platinum group materials including rhodium (Rh), palladium and ruthenium and their alloys comprising two or more additions, e.g.
  • This invention provides a new solution to deposit such a coating very controllably on only the tip region of stress metal springs using a technique that is compatible with the integrated circuit technology.
  • a "button" comprised preferably of a plurality of electrically conducting films is fabricated at the spring tip region for making contacts with the electrical contact pads or terminals.
  • the coating material as mentioned above, is deposited as the final overlayer onto the "button" before the free portion of the probe spring is released from the substrate.
  • the process steps for fabricating springs with "buttoned” tips are as follows. Following the deposition of the stress metal spring core film, e.g. Mo-Cr, a mask, e.g. photoresist, is deposited onto the core film and patterned using techniques, e.g. photolithography, to define a spring. The spring is etched, the photoresist removed, and an additional photo process is followed, such that all of the core film, except the spring tip regions, remains covered with the mask. Subsequently the film, e.g. Rh, that is to be later deposited as overlayers onto the core of the spring is deposited to the desired thickness onto the exposed spring tip regions followed by deposition of appropriately thick, e.g.
  • appropriately thick e.g.
  • films to be deposited onto the spring tip region can also be comprised of materials other than the one that is to be later deposited onto the main body of the spring. Upon removal of the mask, etching is used to undercut the spring and release the free portion of the spring from the substrate. This is followed by deposition of overlying films to the desired thickness onto the main body of the springs, while the spring tip regions already fabricated is kept protected with a mask of, for example, photoresist or polyimide.
  • the thickness of the resulting tip region could be designed to be approximately equal to the remaining part of the lifted springs. Subsequently the mask is removed and the probe springs with the desired thickness of the coating materials on the spring tip regions are obtained. Although a number of film deposition techniques can be used to deposit the overlayers and the final coating layers, electrodeposition is a preferred for such depositions. In another variation of this embodiment, selective deposition of overlying films onto the spring tip regions prior to spring release can also be done after patterning the deposited core film into spring fingers, instead of patterning the spring fingers after the coating films are deposited onto the spring tip regions. The rest of the subsequent process steps are the same for both embodiments.
  • buttons on raised plated springs like the one shown in Figure 7 are described below.
  • the spring tip region is selectively coated (button fabrication) with one or more suitable materials, after the spring is lifted from the substrate, using photolithography.
  • a photoresist is deposited using well-known techniques, such as spinning or spraying or plating, onto the lifted springs.
  • the preferred method is to spin on photo resist.
  • thick photo resist can be applied to the springs because the relatively thick envelope of material over the core stiffens them substantially. Because of this enhanced stiffness the spring height is not affected significantly by the application of photo resist.
  • the spring covered in photo resist is shown in Figure 8.
  • the electrical terminals at the back side of the substrate is used for connection to the power supply, as discussed above.
  • the backside terminals are connected to the springs on the front side of the substrate through metallized vias.
  • the photoresist is then selectively removed from the spring tip regions, including the top surface and the sidewalls of the tip regions, using photomask and photolithography techniques as shown in Figure 9.
  • the tip coating material as described in the preceding paragraph, e.g. Pd-Ni, Pd-Co, is deposited onto the spring tip regions using conventional techniques, preferably electroplating.
  • buttons are comprised of platinum group materials (namely Pd, Pt, Rh, Os, Ru and Ir), Ni, Co, Au and Ag. This structure is shown in Figure 10.
  • the tip buttons are plated following the deposition of the relatively thick envelop of a material e.g. Ni) onto the core, which stiffens the spring substantially. Because of this enhanced stiffness and the relatively small area coverage of the spring by the button, spring lift height is not affected significantly by button plating.
  • the photo resist is removed leaving the final structure as shown in Figure 11. Note the anchor portion 516.
  • a variation of the solution described in the preceding paragraph can also be used to selectively apply coating to the spring tip region following the lifting of the spring core film and deposition of the overlying films.
  • an electrically conducting material such as Au, Ag or Cu
  • This conducting layer is used for providing electrical connection for button electroplating of the spring tips.
  • photoresist is deposited all over the electrically conductive surfaces.
  • the coating material is selectively deposited onto the spring tip regions only. The thin conducting material deposited prior to the photoresist deposition is then removed by wet or dry etching techniques.
  • FIG. 12b illustrates a particular embodiment of the selectively coated spring tip region with an improved spring lifetime, wherein 1215 refers to a tip button with protective coating, such as Pd-Co or Pd-Ni alloy, etc.
  • 1215 refers to a tip button with protective coating, such as Pd-Co or Pd-Ni alloy, etc.
  • the free portion 1218 of the spring is substantially tapered.
  • the spring lifetime is substantially enhanced, and the coating material at the tip region does not show any significant degradation, during repeated touchdowns.
  • Figure 13 is a drawing showing the result of tip (button) plating using photoresist application followed by patterning to expose the tip region and selective coating of the tip region by electroplating of a Pd-Co alloy.
  • buttons can be substantially covered with the plated buttons, although generally only a relatively small area of the spring tip contacts the IC terminals or electrical contact pads on other components of probe card test assemblies for electrical testing or burn-in operations.
  • the large area coverage of the spring tips by the button materials provides flexibility in designing the springs and test assembly.
  • joining of the springs to IC terminals or contact pads of electrical components for packaging applications using techniques such as soldering is greatly facilitated through the use of buttons that substantially covers the spring tips.
  • button plating materials are selected from the group that form good reliable bond with the solder e.g. Sn containing alloys, Pb-Sn or Pb-free solders) commonly used in microelectronic packaging industry.
  • button materials or spring coating materials for making contacts with solders or conductive adhesives in packaging applications are multillayer stack of films comprising platinum group materials, e.g. palladium, platinum, ruthenium etc., as well as cobalt, nickel, gold, copper, cobalt or alloys.
  • the resistance of the stress metal spring to failure can also be increased by designing springs with varying width that increases from the tip area to the base of the finger. Most of the spring fracture during repeated touchdowns occurs near the base of the springs. Because the stress generated during contact with contact pads is, in general, the highest near the base of the spring finger, the stress near the base can be reduced substantially by increasing the width near the base area. For example, the free portion of the spring can be patterned to have a substantially trapezoidal shape. Similar increase in the failure resistance can also be achieved by making the region nearer to the spring-base thicker which, for constant applied force, also reduces the stress in the proximity of the spring-base region.
  • FIGs. 12a and 12b are schematic diagrams showing a particular embodiment 1200 of the springs with varying width in tapered shape, wherein 1216 refers to a fixed spring base and 1218 refers to a free portion of spring with tapering for relatively uniform stress distribution. Having the free portion 1218 of the spring tapered results in a significant increase in the failure resistance of the spring.
  • the key point here is to shape the free portion 1218 of the spring appropriately, in this case through tapering, so that the bending stress is evenly distributed along the spring 1200.
  • the spring compliance is increased because of tapering. This concept thus allows a design solution to maximize force at a minimum stress for a given compliance range.
  • FIG. 12b schematically shows a buttoned and tapered spring which have been found to withstand large number of touchdowns without fracture.
  • stress metal spring core members comprising a free portion and an anchor portion attached to the substrate, are materials with high elastic modulus, such as Mo, Mo-Cr, W, Ti-W.
  • the core member is selectively coated, after the free portion of the spring is lifted, to cover all its exposed surfaces.
  • the result is an envelope comprising at least one metal films deposited by electroplating without mask using metallized through hole vias in the substrate to establish electrical contact from the backside (opposite to the spring side) of the substrate.
  • the envelope balances the stress in the free portion, and extends to the anchor portion without any discontinuity which mechanically weakens the film causing early fracture.
  • Ni or Ni alloy is deposited onto the core member.
  • Additional film such as Pd alloy film is optionally electroplated onto Ni, if needed.
  • Selective deposition of additional layer of the palladium alloy film onto the spring tip region is carried out using conventional photolithography and deposition techniques, such as electro-deposition (electroplating and/or electroless) or sputtering or CVD.
  • Typical thickness of Mo-Cr is 4 ⁇ m.
  • the thickness of electroplated nickel and palladium alloy films on each side of Mo-Cr film are 2-20 and 1-1 O ⁇ m, typically 12 and 4 ⁇ m, respectively. In this case the elastic modulus of the films decreases from the core towards both surfaces of the spring.
  • the thickness of the button comprising additional deposit of palladium alloy film, for example, at the contact tip region is 1- 20 ⁇ m with a typical value of 12 ⁇ m.
  • Another aspect of this invention is to eliminate points of stress concentration on the spring surface. We have observed that often the spring failure, such as crack, is initiated at the surface during repeated touchdowns. Thus, surface roughness needs to be minimized. Much of the roughness on the sidewall of the lifted spring, as shown in FIG. 5, originates during patterning the core film, such as those composed of Mo-Cr, W or Zr-Ni for example, by wet etching. Overlying films, such as 506, subsequently deposited on the core 507 follow the rough contour of the sides, resulting in a rough surface on the side of the completed spring structure. According to this invention, forming the spring core pattern by dry etching involving ionized species minimizes this roughness.
  • the roughness is also minimized using the process of sequential plating and reverse plating (deplating) to build up the spring thickness.
  • Reverse plating parameters are adjusted so that only a fraction of the plated thickness is removed during reverse plating. Polishing the sides of the wet etched core 507 initially or of the fully plated springs by electropolishing, chemical or electrochemical polishing can also minimize the roughness.
  • stand-offs are provided on the substrate or electrical components so that the springs, in which the core film is covered everywhere with the overlying film deposits, are constrained to a maximum overdrive on the electrical contact pads or terminals that is allowed by the designed heights and locations of the stand-offs.
  • the solutions described above can also be used in the manufacturing of various other cantilever springs, which are not stress metal springs that are partially lifted as a result of the presence of an intrinsic stress gradient in the film.
  • One of the major concerns about the performance of these other cantilever springs is also the propensity to failure, e.g. deformation or crack formation, near the base or the anchored end of the cantilever springs, as the stress in this region is the highest when the spring tip-ends are pressed into contact with the contact pads, i.e. input/output (I/O) pads of the wafer or other substrates or components of the test or burn-in assembly.
  • I/O input/output
  • the length of the spring is currently designed to be relatively large, e.g. approximately 700-2,000 ⁇ m.
  • springs of higher thickness are made by electroplating one or more metals or their alloys, such as nickel or nickel alloys, or palladium alloys, on photo-lithographically patterned free standing spring core such as Mo-Cr alloy.
  • the springs are patterned, using photo-lithography, and fabricated by electroplating relatively thick layers of at least one metal or metal alloy films, e.g. nickel or nickel alloys, on seed layers.
  • button type contact structures are also provided at the contact tip regions to improve the contact properties and maintain the contact integrity during repeated touchdowns at the time of wafer testing and burn-in operations.
  • such embodiments still require relatively thick films for constructing the main body of the springs in order to apply the required contact force at the contact tip end.
  • relatively shorter springs which are approximately 100- 700 ⁇ m long, the increased spring thickness results in higher stresses near the base end, resulting in a lower spring lifetime.
  • Described below are solutions for manufacturing shorter cantilever type of springs with or without buttons like contact structures at the spring tip regions, in which the strength at the springs' base or main body regions is strengthened against mechanical failure, resulting in a significant enhancement of the performance, strength, durability, and lifetime of such springs.
  • FIGs. 14a and 14b illustrate two cross-sectional views of a typical freestanding non- stress metal cantilever spring according to one embodiment of the invention.
  • the freestanding cantilever spring comprises a base region 1401 at one end that is attached to an electrical contact pad 1402 of a substrate 1403, a contact tip region 1404 at the other end of the spring, a button 1406 together with the contact tip region 1404, and a main body deposited with a Ni film 1408 and a Pd-alloy film 1409.
  • the spring length can be substantially parallel to the surface of the substrate it is attached to, or it can extend away from the substrate surface making an oblique angle to the surface.
  • the base 1401 , the tip 1404 and the main body of the spring are fabricated with the same materials in the same operation, for example, by using thin film deposition techniques such as electroplating, sputtering, or CVD.
  • the contact tip region 1404 comprises a button type contact structures 1406 for facilitating reliable and durable contacts, which may be fabricated by selectively depositing films on the contact tip region 1404 as an integral part of the tip region or separately fabricated and affixed to the tip region.
  • the base region 1401 may be attached to a post that may be integrally fabricated with the spring, or fabricated separately and joined to the base using conventional techniques, such as soldering, brazing and etc.
  • films may be selectively deposited, using techniques such as electroplating, into holes within sacrificial substrates, followed by polishing.
  • button type contact structures 806 at the spring tip regions 1404 is useful for achieving reliable and durable electrical contacts to the opposing contact pads in a wafer test or burn-in assembly.
  • appropriate materials with desirable contact characteristics and thickness can be selected for constructing such buttons which are not necessarily, but can also comprise, the same materials that comprise the main body 1405 or base 1401 of the spring.
  • selections of the materials for each of the three parts must be such that they impart robustness to all parts of the springs allowing them to withstand the wafer test and burn-in process including repeated touchdowns without failure.
  • Many materials suited for various electroplating applications have been used in making the cantilever type of springs.
  • Non-stress metal cantilever springs manufactured today are still relatively long, for example 1-2 mm.
  • a major objective in the field is to find a means to fabricate arrays of much shorter and robust springs to support the continuing drive of the microelectronic industry to produce deep sub-micron integrated circuits with greater circuit density and concomitant smaller pitch between input/output terminals.
  • This invention makes it possible that arrays of such robust contact springs are fabricated by applying specific material selection principles for the construction of the buttoned or non-buttoned springs, which comprises metal films. Selection of the appropriate materials by applying these principles provides particular methods of film deposition and thus results in the fabrication of contact springs with the desired robustness.
  • a specific material selection principle that has been found to have a highly significant effect in improving the performance and reliability of the springs is as follows.
  • the multilayer films comprising the three parts, i.e., a base, a tip region, and a body, of the spring and the button should have a graded material composition so that the films with lower elastic modulus are deposited near the spring surface that makes contacts with the IC terminals for testing, and films with increasingly higher modulus are deposited towards the opposite surface.
  • the mechanical strength of the button is not as critical a factor as the mechanical strength of the main body and base region of the springs for determining the robustness of the springs.
  • the button films can also be optionally selected and deposited, if needed, in such a way that the modulus of the film at the button surface has lower elastic modulus than the underlying film layers, the modulus of which increases progressively away from the button surface.
  • Such a graded transition in compositions and elastic modulus from the spring contact surface to the opposite surface, either continuously or in discrete steps across an interface between two different materials can be used to distribute the stresses at critical locations, and thus suppress damages to the spring. As a result the lifetime of springs increases. This increases the resistance to mechanical failure in the spring everywhere including the base 801 of the spring as the spring tips 804 are pressed into contact with the contact pads on another substrate, such as semiconductor wafers or other components of a test or burn-in assembly.
  • one exemplary embodiment of the non-stress metal cantilever springs comprises nickel film as a base layer with palladium-approximately
  • the button 1406 on the tip region 1404 can comprise additional layers of films of the said palladium alloy.
  • the button 1406 may be fabricated as an integral part of the contact tip region 1404 or separately affixed to the tip region 1404.
  • Such springs as illustrated in FIGs. 14a and 14b are typically deposited on sacrificial layers, which are subsequently removed to provide the freestanding cantilever springs.
  • the substrate 1403 may also have multilayer metallization and an electrically conducting blind vias or through-vias, as 502 shown in FIG. 5.
  • the films 1408 and 1409 and other additional layers are deposited by conventional techniques such as electroplating.
  • a suitable thin adhesion promoting layer and/or a seed layer, comprising materials such as titanium, may also be deposited prior to the deposition of the electroplated layer, as needed.
  • the thickness of the respective film layers is determined by the desired contact force or spring constant, which can be calculated from various mathematical expressions.
  • Various spring dimensions can be used, 1- 50 ⁇ m as thickness range for example, based on design requirement, for example, regarding force andpitch.. Taking an overall spring thickness of 30 ⁇ m as an illustration, the nickel and the palladium alloy thicknesses in the present embodiment can be 25 ⁇ m and 5 ⁇ m respectively. Thickness of the additional layer of palladium alloy in the button in this case can be 3-20 ⁇ m. It is to be appreciated that the above numbers are used for examples only. A wide variation in the numbers works well for ensuring the robustness of the springs, as long as the basic principle is satisfied.
  • the core film is made of molybdenum-chromium alloy or titanium-tungsten or molybdenum-tungsten, with sequentially deposited overlayers of nickel and palladium alloy films.
  • the button 1406 on the tip region 1404 comprises, as above, additional deposited thickness of the said palladium alloy.
  • the button 1406 may be fabricated by selectively depositing, using photolithography, the additional thickness of palladium alloy film onto the tip region 1404. The discussion on exemplary thickness range, deposition techniques, adhesion promoting layer and seed layer and etc., in the preceding paragraph also applies to this case.
  • the films of the above embodiments of non-stress metal cantilever springs can be preferentially deposited with compressive stress to further improve robustness.
  • the robustness is also further improved by selecting the film deposition parameters appropriately so that the grain size of the films are very small, e.g. 3-500nm. Examples of such deposition parameters include, for example, additive concentration in the electroplating bath, current density, and temperature.
  • the disclosed interconnection apparatus and associated fabrication methods are suitable for various applications, including but not limited to testing of electronic components, wafer level burn-in and packaging of electronic devices.
  • the said electronic components comprise devices such as integrated circuits, liquid crystal displays, MEMS, as well as printed circuit boards, or any combinations thereof.
  • Packaging includes joining and establishment of electrical connections between two components or substrates, using the disclosed contact spring elements, where joining may be accomplished with or without the use of solders or conductive adhesives.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Measuring Leads Or Probes (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Manufacture Of Switches (AREA)

Abstract

L'invention concerne une solution pour augmenter la force de résistance et la résistance à la fatigue des ressorts miniaturisés, qui peuvent être fabriqués dans des réseaux à pas extrêmement petit. Elle concerne aussi une solution pour réduire au minimum l'adhérence des matières de plaquettes de contact aux pointes des ressorts après plusieurs contacts répétés, et ce sans diminuer la fiabilité des ressorts miniaturisés. En outre, l'invention concerne aussi un procédé pour fabriquer des ressorts qui permettent la circulation d'un courant relativement intense sans réduire sensiblement leur durée de vie.
PCT/US2003/008520 2002-03-18 2003-03-18 Ressort de contact miniaturise WO2003081725A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE10392441T DE10392441T5 (de) 2002-03-18 2003-03-18 Eine miniaturisierte Kontaktfeder
JP2003579319A JP2006508495A (ja) 2002-03-18 2003-03-18 小型化されたコンタクトスプリング
AU2003218288A AU2003218288A1 (en) 2002-03-18 2003-03-18 A miniaturized contact spring
KR10-2004-7014722A KR20040093740A (ko) 2002-03-18 2003-03-18 상호접속 장치 및 소형 스프링 제조 방법

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US36562502P 2002-03-18 2002-03-18
US60/365,625 2002-03-18
US10/178,103 US6917525B2 (en) 2001-11-27 2002-06-24 Construction structures and manufacturing processes for probe card assemblies and packages having wafer level springs
US10/178,103 2002-06-24
USPCT/US02/26785 2002-08-23
PCT/US2002/026785 WO2003018865A1 (fr) 2001-08-24 2002-08-23 Procede et appareil de production de contraintes isotropes uniformes dans un film depose par pulverisation
US10/390,994 US7137830B2 (en) 2002-03-18 2003-03-17 Miniaturized contact spring
US10/390,098 US6943149B2 (en) 1999-06-29 2003-03-17 Benzimidazolone peptidomimetics as thrombin receptor antagonists
US10/390,994 2003-03-17
US10/390,098 2003-03-17

Publications (3)

Publication Number Publication Date
WO2003081725A2 true WO2003081725A2 (fr) 2003-10-02
WO2003081725A3 WO2003081725A3 (fr) 2003-12-18
WO2003081725B1 WO2003081725B1 (fr) 2004-03-25

Family

ID=28457983

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/008520 WO2003081725A2 (fr) 2002-03-18 2003-03-18 Ressort de contact miniaturise

Country Status (3)

Country Link
AU (1) AU2003218288A1 (fr)
DE (1) DE10392441T5 (fr)
WO (1) WO2003081725A2 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006017581A1 (fr) * 2004-08-05 2006-02-16 Sv Probe Pte Ltd. Placage d’une pointe de sonde
JP2006102938A (ja) * 2004-10-07 2006-04-20 Palo Alto Research Center Inc 自動リリース型スプリング構造及び関連する方法
WO2007080771A1 (fr) * 2006-01-13 2007-07-19 National University Corporation Shinshu University Sonde de contact
WO2009138906A2 (fr) * 2008-05-12 2009-11-19 Nxp B.V. Dispositifs de système microélectromécanique et leur fabrication
US9102119B2 (en) 2012-06-26 2015-08-11 General Electric Company Encapsulated beam and method of forming

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021200510A1 (de) 2021-01-21 2022-07-21 BSH Hausgeräte GmbH Bildschirm-Vorrichtung mit einer Bildschirmfläche

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166774A (en) * 1990-10-05 1992-11-24 Motorola, Inc. Selectively releasing conductive runner and substrate assembly having non-planar areas
US5280139A (en) * 1990-03-01 1994-01-18 Motorola, Inc. Selectively releasing conductive runner and substrate assembly
US5476211A (en) * 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
US5917707A (en) * 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US20010009305A1 (en) * 1998-10-28 2001-07-26 Joseph Fjelstad Microelectronic elements with deformable leads
US20010009724A1 (en) * 1995-05-26 2001-07-26 Chen Jimmy Kuo-Wei Method of making a product with improved material properties by moderate heat treatment of a metal incorporating a dilute additive

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5280139A (en) * 1990-03-01 1994-01-18 Motorola, Inc. Selectively releasing conductive runner and substrate assembly
US5166774A (en) * 1990-10-05 1992-11-24 Motorola, Inc. Selectively releasing conductive runner and substrate assembly having non-planar areas
US5476211A (en) * 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
US5917707A (en) * 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US20010009724A1 (en) * 1995-05-26 2001-07-26 Chen Jimmy Kuo-Wei Method of making a product with improved material properties by moderate heat treatment of a metal incorporating a dilute additive
US20010009305A1 (en) * 1998-10-28 2001-07-26 Joseph Fjelstad Microelectronic elements with deformable leads

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006017581A1 (fr) * 2004-08-05 2006-02-16 Sv Probe Pte Ltd. Placage d’une pointe de sonde
US7638028B2 (en) 2004-08-05 2009-12-29 Sv Probe Pte. Ltd. Probe tip plating
JP2006102938A (ja) * 2004-10-07 2006-04-20 Palo Alto Research Center Inc 自動リリース型スプリング構造及び関連する方法
WO2007080771A1 (fr) * 2006-01-13 2007-07-19 National University Corporation Shinshu University Sonde de contact
WO2009138906A2 (fr) * 2008-05-12 2009-11-19 Nxp B.V. Dispositifs de système microélectromécanique et leur fabrication
WO2009138906A3 (fr) * 2008-05-12 2010-06-10 Nxp B.V. Dispositifs de système microélectromécanique et leur fabrication
US8853797B2 (en) 2008-05-12 2014-10-07 Nxp, B.V MEMS devices and fabrication thereof
US9102119B2 (en) 2012-06-26 2015-08-11 General Electric Company Encapsulated beam and method of forming
US10183467B2 (en) 2012-06-26 2019-01-22 General Electric Company Encapsulated beam and method of forming

Also Published As

Publication number Publication date
AU2003218288A1 (en) 2003-10-08
WO2003081725A3 (fr) 2003-12-18
DE10392441T5 (de) 2005-07-07
WO2003081725B1 (fr) 2004-03-25

Similar Documents

Publication Publication Date Title
US7137830B2 (en) Miniaturized contact spring
US6640432B1 (en) Method of fabricating shaped springs
US7621044B2 (en) Method of manufacturing a resilient contact
US7048548B2 (en) Interconnect for microelectronic structures with enhanced spring characteristics
KR100252457B1 (ko) 캔틸레버 요소및 희생기층을 사용하는 상호 접속요소의 제작방법
JP4160809B2 (ja) プローブカード・アセンブリ及びキット、及びそれらを用いる方法
EP1136827B1 (fr) Contacteur avec élément de contact au côté du circuit LSI, élément de contact au côté de la plaquette de test pour tester des dispositifs semi-conducteurs et méthode de fabrication d'un tel contacteur
US6246247B1 (en) Probe card assembly and kit, and methods of using same
US6920689B2 (en) Method for making a socket to perform testing on integrated circuits
US7800388B2 (en) Curved spring structure with elongated section located under cantilevered section
US7548082B2 (en) Inspection probe
US20020053734A1 (en) Probe card assembly and kit, and methods of making same
US20070245553A1 (en) Fine pitch microfabricated spring contact structure & method
US7458816B1 (en) Shaped spring
JP2006508495A (ja) 小型化されたコンタクトスプリング
KR20010062766A (ko) 프로브 구조물 및 이의 제조 방법
WO2003081725A2 (fr) Ressort de contact miniaturise
EP1275150A2 (fr) Ressorts faconnes et leurs procedes de fabrication et d'utilisation
KR20040093740A (ko) 상호접속 장치 및 소형 스프링 제조 방법

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PH PL PT RO RU SC SD SE SG SK SL TJ TM TN TR TT TZ UA UG UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
B Later publication of amended claims

Effective date: 20031020

WWE Wipo information: entry into national phase

Ref document number: 2003579319

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 20038062933

Country of ref document: CN

Ref document number: 1020047014722

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 1020047014722

Country of ref document: KR

122 Ep: pct application non-entry in european phase
RET De translation (de og part 6b)

Ref document number: 10392441

Country of ref document: DE

Date of ref document: 20050707

Kind code of ref document: P

WWE Wipo information: entry into national phase

Ref document number: 10392441

Country of ref document: DE

REG Reference to national code

Ref country code: DE

Ref legal event code: 8607