WO2007080771A1 - Sonde de contact - Google Patents

Sonde de contact Download PDF

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Publication number
WO2007080771A1
WO2007080771A1 PCT/JP2006/325726 JP2006325726W WO2007080771A1 WO 2007080771 A1 WO2007080771 A1 WO 2007080771A1 JP 2006325726 W JP2006325726 W JP 2006325726W WO 2007080771 A1 WO2007080771 A1 WO 2007080771A1
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WO
WIPO (PCT)
Prior art keywords
gold
contact probe
contact
plating
conditions
Prior art date
Application number
PCT/JP2006/325726
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English (en)
Japanese (ja)
Inventor
Masatsugu Fujishige
Susumu Arai
Feng Wang
Original Assignee
National University Corporation Shinshu University
Mikuni Kogyo Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by National University Corporation Shinshu University, Mikuni Kogyo Co., Ltd. filed Critical National University Corporation Shinshu University
Publication of WO2007080771A1 publication Critical patent/WO2007080771A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06755—Material aspects
    • G01R1/06761—Material aspects related to layers

Definitions

  • the present invention relates to a contact probe.
  • a contact probe is used to contact an IC chip or an electrode part of an LCD, evaluate an electrical contact state of the component, and inspect a defective product.
  • H is the Brinell hardness of the softer contact
  • P is the contact load
  • Patent Document 1 JP-A-11 201989 (Claim 2)
  • the conventional contact probe has the following problems.
  • the contoured probe with gold plating has the advantage that the contact resistance can be lowered and the stable low contact can be maintained, but the part that comes into contact with other objects during inspection is too soft and durable.
  • contact probes with gold and other metal alloys are superior in durability because they can be harder than gold, which makes it a reliable machine. While it has the advantage of being able to maintain a constant opening and closing, it has the disadvantage that the contact resistance is high and it is difficult to maintain a stable low contact.
  • the present invention has been made to solve the above problems, and an object of the present invention is to provide a contact probe that can reduce contact resistance and is excellent in durability.
  • the present invention provides a gold metal comprising a single metal element of gold having a crystallite force having an average particle diameter in a range of 17 nm or more and 25 nm or less and having a Vickers hardness of 160 Hv or more.
  • the attached film is a contact probe that is formed at a site that is in contact with another object at least during inspection. For this reason, a contact probe with low contact resistance and excellent durability can be obtained. In other words, since a metal film is formed with a plating film that is composed only of gold, the contact resistance is lower than that of a contact probe that forms an alloy film containing a metal other than gold. .
  • the gold-plated film is a gold-plated film having a crystallite force in the range of an average particle size of 17 nm or more and 25 nm or less, and a Vickers hardness of 160 Hv or more.
  • a gold-plated film consisting of a single metal elemental force of gold with an average particle size in the range of 17 nm to 25 nm and a Vickers hardness of 160 Hv or more is a component of all contact members. Alternatively, it may be formed on some constituent members. In the case where it is formed on some constituent members, a gold-plated film having an average particle size of crystallites outside the range of the present invention may be formed on other constituent members. However, it should be formed at least at the part that comes into contact with other objects (including the object to be inspected) at the time of inspection.
  • Another aspect of the present invention is a contact probe in which a Ni-containing layer is formed between the contact surface and the gold plating film of the contact probe in the previous invention.
  • the contact probe according to the present invention includes, for example, an electrode placement step of placing a contact probe before plating to be a cathode and an anode in a non-cyan gold plating bath, and an anode and a cathode.
  • An electrodeposition process in which a pulsed current is passed between them, and during the electrodeposition process, 5 msec or more It can be manufactured by supplying a pulse current with a pulse period in the range of 300 ms or less and a ratio of the pulse on time to the pulse period in the range of 0.001 to 0.5.
  • the above manufacturing method can easily control the thickness of the gold plating film and the time of the electrodeposition process by adopting a pulse current. Therefore, the manufacturing process can be simplified, and the contact probe can be manufactured efficiently and at low cost.
  • the electrodeposition step can be performed by adding a cationic additive to a non-cyan gold plating bath.
  • a manufacturing method is adopted, the size of the gold crystallite is reduced because the cationic additive is adsorbed on the surface of the contact probe and changes the energy of the crystal field or the location where it precipitates. be able to.
  • the cationic additive can be trimethylstearyl ammonium chloride.
  • trimethylstearyl ammonium chloride it becomes easier to control the average particle size of the crystallites to be precipitated, and it is made of a crystallite having a more uniform average particle size. Can be formed on the surface.
  • the source of gold used in the non-cyan gold plating bath includes a non-cyanide gold compound, a salt-metal complex, sulfite.
  • Gold complexes, cysteine gold complexes, acetyl cysteine gold complexes, etc. and alkali metal salts thereof And z or ammonium metal salt can be used.
  • sodium salty oxalate it is preferable to use sodium salty oxalate.
  • the above-mentioned gold supply source is only an example, and other non-cyanide gold salts or gold complexes may be adopted.
  • the gold supply source may be one kind of gold compound or two or more kinds of gold compounds.
  • conductive salt used in the non-cyan gold plating bath known conductive salts, for example, alkali metal salts such as sulfuric acid, sulfurous acid and hydrochloric acid are used. Alternatively, an ammonium salt or the like can be used. Particularly preferred is sodium sulfite. These conductive salts may be used alone or in combination of two or more. A layer containing Ni is broadly interpreted to include various layers such as Ni—P, Ni—B, and Ni alone.
  • Examples of the cationic additive used in the production process of the contact probe according to the present invention include trimethyl stearyl ammonium chloride, lauryl trimethyl ammonium salt, stearyl trimethyl ammonium salt, stearyl dimethyl ammonium- Umbetaine, trimethylbenzyl ammonium, triethylbenzyl ammonium salt, oleimiridazolium salt, polyacrylic acid molecular weight 5000, polyethylene glycol molecular weight 2000, and the like. Particularly preferred is trimethylstearyl ammonium chloride.
  • FIG. 1 is a diagram showing a contact portion between a contact probe and an IC according to an embodiment of the present invention.
  • FIG. 2 is a diagram showing a contact probe according to an embodiment of the present invention arranged to connect an IC and a load board.
  • FIG. 3 is a view showing a state in which the surface of the first cylindrical portion of the barrel is partially peeled in the contact probe shown in FIG.
  • a part of the gold-plated film (the part indicated by A) is shown enlarged on the right side.
  • FIG. 4 is a flowchart showing a manufacturing process of a gold plating film in the contact probe according to the embodiment of the present invention.
  • FIG. 5 is a view showing a part of the wafer inspection apparatus.
  • FIG. 6 shows a gold-plated film obtained by electrodeposition using a direct current (a gold-plated film obtained under the conditions of Comparative Example 1) and obtained by electrodeposition using a pulse current.
  • 4 is a scanning electron microscope photograph of the surface of a gold plating film (gold plating film obtained under the conditions of Example 9).
  • A) is a SEM photograph of the surface of the gold-plated film obtained under the conditions of Comparative Example 1.
  • B is a SEM photograph of the surface of the gold-plated film obtained under the conditions of Example 9.
  • FIG. 7 shows an X-ray diffraction chart of each metallized film shown in FIG.
  • A is an X-ray diffraction chart of a gold-plated film obtained under the conditions of Comparative Example 1.
  • (B) is an X-ray diffraction chart of a gold-plated film obtained under the conditions of Example 9.
  • FIG. 8 is a diagram showing the measurement results of contact resistance of a contact probe having a gold film formed under the conditions of Example 7.
  • FIG. 9 is a diagram showing the measurement results of contact resistance of a contact probe bonded with an alloy of gold and Co.
  • FIG. 10 is a diagram showing an average value and ⁇ deviation of contact resistance values based on the results of effective batches in each contact probe shown in FIGS. 8 and 9.
  • the curve of curve ⁇ ⁇ ⁇ and curve B are the curve of the contact probe with a gold-plated film and the curve of the contact probe with a gold-Co alloy, respectively.
  • FIG. 1 is a diagram showing a contact portion between contact probe 1 and IC 2 according to the embodiment.
  • Solder balls 3 are arranged at intervals L on one side of IC2. In this embodiment, the distance L is set to 0.5 mm. In the future, the distance L tends to become narrower in the future.
  • the tip on one end side of the contact probe 1 is a recess 10a. The recess 10a is formed to facilitate contact with the solder ball 3.
  • FIG. 2 is a view showing the contact probe 1 arranged so as to connect the IC 2 and the load board 4.
  • the internal structure of the contact probe 1 is shown transparently so as to reduce power.
  • the contact probe 1 has a configuration in which the barrel 10, the spring 20, and the plunger 30 are arranged in contact with each other in order, and the outside is covered with a cylinder 40.
  • the barrel 10 is directed from the side that contacts the solder ball 3 to the side that contacts the spring 20, and the first cylindrical portion 11 including the concave portion 10a and the step 12 following the step 12 are narrower than the first cylindrical portion 11.
  • the second cylindrical portion 13 and the step 14 are followed by a third cylindrical portion 15 that is thicker than the second cylindrical portion 13.
  • the plunger 30 has a side force that contacts the load board 4 also directed to the side that contacts the spring 20, so that the plunger 30 has a pointed tip 30 a and a step 32, followed by the step 32 and the fourth column 31.
  • the thick fifth cylindrical portion 33 is arranged in this order.
  • the outer diameter of the first cylindrical portion 11, the outer diameter of the third cylindrical portion 15, the heel diameter of the spring 20, and the outer diameter of the fifth circular column portion 33 are substantially the same size, and the cylinder into which these are inserted It fits inside 40.
  • a constricted portion 41 constricted inward is formed slightly above the longitudinal center of the tube 40.
  • the constricted portion 41 has a shape in which two slopes that are substantially the same as the slope of the step 12 and the slope of the step 14 are connected in the vertical direction.
  • the length of the first cylindrical portion 11 is designed so that it protrudes from the tube 40 even when the step 12 reaches the constricted portion 41. Further, the end of the cylinder 40 on the plunger 30 side is narrowed to a small diameter according to the slope of the step 32.
  • the plunger 30 can move up and down within a range in which the tip force of the cylinder 40 does not protrude inward from the step 32. Further, the barrel 10 can move up and down in a range from a state where the step 12 contacts the constricted portion 41 to a state where the step 14 contacts the constricted portion 41.
  • the contact probe 1 is designed so that the step 14 comes into contact with the constricted portion 41 and the step 32 comes into contact with the narrowed tip of the tube 40 when the spring 20 is in a natural length state. Therefore When the barrel 10 and the plunger 30 are moved inward of the cylinder 40 from the state shown in FIG. 2, the operation is performed by compressing the spring 20.
  • the barrel 10 is made of a copper alloy.
  • a Ni—P plating layer is formed on the surface of the barrel 10, and a gold plating film is further formed on the surface of the Ni—P plating layer.
  • the spring 20 is formed by winding a piano wire.
  • a Ni—P plating layer is also formed on the surface of the spring 20, and a gold plating film is formed on the surface of the Ni—P plating layer.
  • Plunger 30 is made of beryllium copper.
  • a Ni—P plating layer is also formed on the surface of the plunger 30, and a gold plating film is further formed on the surface of the Ni—P plating layer.
  • the material constituting the barrel 10, the spring 20 and the plunger 30 is not limited to the above-described materials, and may be other materials as long as they are robust and excellent in workability. Further, instead of the Ni—P plating layer, a Ni—B layer or a Ni-only layer may be formed.
  • FIG. 3 is a view showing a state where a part of the surface of the first cylindrical portion 11 of the barrel 10 is peeled off.
  • a part of the gold-plated film (the part indicated by A) is shown enlarged on the right side.
  • a Ni-P plating layer l ib exists on the surface 11a of the barrel 10.
  • a Ni film which is a metal, covers the barrel 10 surface.
  • the thickness of the Ni—P plating layer l ib is 2.5 to 4.0 / z m.
  • a gold-plated film 11c exists on the surface of the Ni—P plating layer l ib.
  • the thickness of the gold-plated film 11c is 0.76 m or more.
  • the average particle diameter d of the gold crystallite is supposed to increase theoretically according to the Hall-Petch relationship, although the hardness should theoretically increase.
  • d is less than 17 nm
  • the hardness of the gold-plated film 11c decreases.
  • An appropriate range for the average particle diameter d of the gold crystallites constituting the gold-plated film 11c is 17 nm or more and 25 nm or less. By controlling the gold crystallite within such a range, the Vickers hardness of the gold-plated film 11c can be increased to 160 Hv or more.
  • the gold-plated film 11c does not contain any metal element other than gold, which is not an alloy. For this reason, the outstanding electrical conductivity which gold has can be maintained.
  • the gold plating film 11c may be formed only on the force barrel 10 and the plunger 30 formed on the surface of the barrel 10, the spring 20, and the plunger 30. Also, a gold film 11c is formed on either the barrel 10 or the plunger 30. May be. Further, the gold-coated film lie may be formed only on a part of the barrel 10 or only on a part of the plunger 30.
  • FIG. 4 is a flowchart showing the manufacturing process of the gold-plated film according to the embodiment of the present invention.
  • step S101 a step of forming a Ni—P plating layer ib on the covering body in advance is performed (step S101).
  • Ni—P the composition and conditions of the plating bath can be arbitrarily selected and are not particularly limited.
  • the Ni—P plating layer l ib may be manufactured not only by electrolytic plating but also by electroless plating.
  • another plating film may be formed inside the Ni—P plating layer l ib.
  • a gold bath containing a non-cyanide gold compound, a conductive salt, a cationic additive, and the like is prepared at a predetermined pH and temperature (step S102).
  • sodium chlorophosphoric acid (III) is preferably used as the non-cyanide gold compound
  • sodium sulfite is used as the conductive salt
  • trimethylstearyl ammonium chloride (TMSAC) is preferably used as the cationic additive.
  • TMSAC trimethylstearyl ammonium chloride
  • the reason why sodium sulfite is used as the conductive salt is to improve the conductivity of the plating bath.
  • 2, 2'-bilibyl can be added as a stabilizer.
  • the cathode and the anode are placed in the plating bath (step S103). Thereafter, electrodeposition is performed while applying a nors current while stirring (step S104).
  • electrodeposition is performed while applying a nors current while stirring (step S104).
  • gold ions existing in the plating bath are deposited as gold on the surface of the covering body in the on-time state. Further, in the off-time state, gold deposition stops, gold ions near the interface of the covering body diffuse, and the concentration becomes constant. By repeating this process, While the gold crystallites constituting the plating film are grown, the deposition of the gold plating film lie proceeds.
  • the on-time and the off-time are an energization time and an interruption time of the pulse current, respectively.
  • the pulse period for the staking process using the pulse current is in the range of 10 msec to 275 msec. If the average particle diameter d of the gold crystallites is in the range of 17 nm to 25 nm and the Vickers hardness is 160 Hv or more, the gold-plated film 11c can be manufactured.
  • a particularly preferable pulse period is in the range of 50 msec to 1 OO msec.
  • the duty ratio of the pulse current is preferably adjusted in the range of 0.001 or more and 0.5 or less. Particularly preferred is a range of 0.008 or more and 0.25 or less.
  • the duty ratio is the ratio of the time in the on-time state to the pulse period of the pulse current.
  • the duty ratio is 0.5 or less, the particle size of the precipitated gold crystallites is significantly different from the plating method using direct current electricity. For this reason, the hardness of the obtained gold-plated film 11c is increased, and the film thickness is also uniform. The possibility of pinholes is reduced.
  • the duty ratio is 0.001 or more, deficiency of gold ions in the vicinity of the interface of the body to be bonded can be sufficiently recovered, and the crystallinity of the gold plating film 11c can be improved.
  • the average current density of the pulse current [0038] conductive ⁇ is, 2 ⁇ : L lmAZcm 2 'sec is preferable.
  • the properties of the gold plating film 11c that is analyzed at an average current density in such a range are relatively good.
  • the contact method between the covering body and the eyelash composition is not limited. It is preferable to immerse the covering body in a plating bath and create a turbulent flow by stirring during electrodeposition. A known method can be used as the stirring method, and is not particularly limited.
  • the plating processing time in this embodiment can be set to an appropriate time depending on the desired thickness of the gold plating film 11c, the type of the body to be used, and the like.
  • the contact probe according to the present invention includes a contact probe for inspecting silicon wello (hereinafter referred to as “weno”) in addition to the contact probe 1 for inspecting IC2 as described above.
  • FIG. 5 shows a part of the wafer inspection apparatus.
  • the wafer 51 When inspecting the wafer 51, the wafer 51 is mounted on the wafer chuck 52 and fixed. Next, the needle of the probe card 53 is brought into contact with the electrode of the IC chip on the wafer 51. In order to ensure the contact, the cantilever 54 of the probe card 53 is used. Between the probe card 53 and the test head 55, a performance board 57 fitted with a pogo ring 56 is arranged. Many contact probes 58 are arranged on the upper and lower sides of the performance board 57. The contact probe 58 is for electrical connection between the test head 55 and the probe force mode 53, and is indirectly connected to the wafer 51. As described above, the contact probe according to the present invention is used not only for the contact probe 1 used for inspecting the IC 2 but also for the contact probe 58 for inspecting the wafer 51 before the completion of the IC 2.
  • the gold plating film formed on the surface of the contact probe according to the present invention may be a film containing another substance (organic substance, inorganic substance other than metal, etc.) as long as it does not contain a metal other than gold.
  • a non-ionic additive may be added to the plating bath for electrodeposition. It is also possible to form only a gold-plated film without interposing a layer containing Ni.
  • Table 1 shows the production conditions for each example and each comparative example.
  • 0.005 M sodium gold chloride (05), 0.05 M sodium sulfite, and 0. lgZL 2,2 bibilidil are used, respectively. It was.
  • trimethylstearyl ammonium chloride which is a kind of 0.1 lgZL cationic additive, was added to prepare a gold bath.
  • an anode and a cathode made of a body to which Ni-P was previously applied were placed, and stirred while maintaining the pH at 8 and the temperature at 60 ° C. .
  • the body to be covered was a barrel, a spring and a plunger constituting a contact probe.
  • a pulse power source was connected to the anode and cathode, and a pulse current was applied under the conditions of an average current density of 5 mAZcm 2 'sec, a pulse period of 10 msec, and a duty ratio of 0.28.
  • Plating was performed under the same conditions as in Example 1 except that the current was passed under the conditions of an average current density of 2 mAZcm 2 'sec, a pulse period of 50 msec, and a duty ratio of 0.008.
  • Plating was performed under the same conditions as in Example 1 except that a current was passed under the conditions of an average current density of 5 mAZcm 2 'sec, a pulse period of 50 msec, and a duty ratio of 0.01.
  • Plating was performed under the same conditions as in Example 1 except that a current of current was passed under the conditions of an average current density of 1 lmAZcm 2 'sec, a pulse period of 50 msec, and a duty ratio of 0.5.
  • Plating was performed under the same conditions as in Example 1 except that the current was passed under the conditions of an average current density of 5 mAZcm 2 'sec, a pulse period of 100 msec, and a duty ratio of 0.001.
  • Example 7 Plating was performed under the same conditions as in Example 1 except that the current was passed under the conditions of an average current density of 5 mAZcm 2 'sec, a pulse period of 100 msec, and a duty ratio of 0.01.
  • Plating was performed under the same conditions as in Example 1 except that a pulse current was passed under the conditions of an average current density of 2.5 mAZcm 2 ′ sec, a pulse period of 100 msec, and a duty ratio of 0.02.
  • Plating was performed under the same conditions as in Example 1 except that a pulse current was passed under the conditions of an average current density of 2.5 mAZcm 2 ′ sec, a pulse period of 100 msec, and a duty ratio of 0.05.
  • Plating was performed under the same conditions as in Example 1 except that the current was passed under the conditions of an average current density of 5 mAZcm 2 'sec, a pulse period of 100 msec, and a duty ratio of 0.05.
  • Plating was performed under the same conditions as in Example 1 except that a pulse current was passed under the conditions of an average current density of 1 lmAZcm 2 ′ sec, a pulse period of 275 msec, and a duty ratio of 0.254.
  • diallyldimethylammonium chloride which is a kind of 0.1 lgZL cationic additive, was further added to obtain a gold-plated bath.
  • a pulse power source was connected to the anode and cathode, and a pulse current was passed under the conditions of an average current density of 5 mAZcm 2 'sec, a pulse period of 10 msec, and a duty ratio of 0.01. Except for these, the plating treatment was performed under the same conditions as in Example 1.
  • Example 2 To the same base bath as in Example 1, 0.1 g / L of a non-ionic additive, polyoxyethylene (23) lauryl ether, was added to obtain a gold bath. While stirring the gold bath, a pulse power source was connected to the anode and the cathode, and a pulse current was passed under the conditions of an average current density of 5 mAZcm 2 's ec, a pulse period of 10 msec, and a duty ratio of 0.01. Except for these, the plating treatment was performed under the same conditions as in Example 1.
  • a non-ionic additive polyoxyethylene (23) lauryl ether
  • Plating was performed under the same conditions as in Example 1 except that a direct current with an average current density of 5 mAZcm 2 ⁇ sec was passed.
  • Example 2 (Comparative Example 2) Plating was performed under the same conditions as in Example 1 except that the current was passed under the conditions of an average current density of 5 mAZcm 2 'sec, a pulse period of 1000 msec, and a duty ratio of 0.01.
  • Plating was performed under the same conditions as in Example 1 except that a current was passed under the conditions of an average current density of 5 mAZcm 2 ′ sec, a pulse period of 100 msec, and a duty ratio of 0.9.
  • a scanning electron microscope (SEM) was used to observe the structure of the surface of each contact probe.
  • An X-ray diffractometer was used to identify the gold-plated film composition and crystallite size.
  • a Vickers hardness measuring machine was used to measure the hardness of the gold-plated film.
  • a contact resistance measuring machine was used repeatedly.
  • the durability of the contact probe formed with the gold plating film under the conditions of Example 7 was compared with the durability of the contact probe bonded with an alloy of gold and Co.
  • one batch is a test in which contact resistance is measured so that the contact probe is sandwiched between the top and bottom of the metal plate, and 16 batch tests are performed.
  • the maximum value, minimum value, average value and deviation of contact resistance were determined for each stitch, and the average value and ⁇ deviation of the contact resistance values of both contact probes were compared for the entire 16 batches.
  • Table 3 shows the characteristics of the gold-plated films obtained in the examples and comparative examples.
  • the average crystallite size of the gold-plated film obtained under the conditions of Example 1 was 23 nm, and the Pitzers hardness was 174 Hv. Further, the average crystallite size of the gold-plated film obtained under the conditions of Example 2 was 24 nm, and the Vickers hardness was 175 Hv. The average crystallite size of the gold-plated film obtained under the conditions of Example 3 was 22 nm, and the Vickers hardness was 177 Hv. Further, the average crystallite size of the gold-plated film obtained under the conditions of Example 4 was 24 nm, and the Vickers hardness was 187 Hv. The average crystallite size of the gold-plated film obtained under the conditions of Example 5 was 20 nm, and the Vickers hardness was 183 Hv. Further, the average crystallite size of the gold-plated film obtained under the conditions of Example 6 was 21 nm, and the Vickers hardness was 171 Hv.
  • the average crystallite size of the gold-plated film obtained under the conditions of Example 7 was 21 nm, and the Pitzers hardness was 189 Hv. Further, the average crystallite size of the gold-plated film obtained under the conditions of Example 8 was 23 nm, and the Vickers hardness was 176 Hv. The average crystallite size of the gold-plated film obtained under the conditions of Example 9 was 18 nm, and the Vickers hardness was 193 Hv. The average crystallite size of the gold-plated film obtained under the conditions of Example 10 is 24 nm. The Vickers hardness was 185 Hv. The average crystallite size of the gold-plated film obtained under the conditions of Example 11 was 25 nm, and the Vickers hardness was 174 Hv. The average crystallite size of the gold-plated film obtained under the conditions of Example 12 was 24 nm, and the Vickers hardness was 162 Hv.
  • the average crystallite size of the gold-plated film obtained under the conditions of Comparative Example 1 was 33 ⁇ m, and the Vickers hardness was 97Hv. Further, the average crystallite size of the gold plated film obtained under the conditions of Comparative Example 2 was 27 nm, and the Vickers hardness was 128 Hv. Furthermore, the average crystallite size of the gold-plated film obtained under the conditions of Comparative Example 3 was 33 nm, and the Pitzers hardness was 80 Hv.
  • FIG. 6 shows a gold-plated film obtained by electrodeposition using direct current (gold-plated film obtained under the conditions of Comparative Example 1) and obtained by electrodeposition using pulsed current.
  • the photograph of the surface of a gold plating film (gold plating film obtained on condition of Example 9) of the scanning electron microscope is shown.
  • FIG. 7 shows an X-ray diffraction chart of each metallized film shown in FIG.
  • the gold-plated film obtained by electrodeposition using direct current is composed of non-uniform gold crystallites, whereas pulse current was used.
  • the gold-plated film obtained by electrodeposition had a uniform and fine crystallite force.
  • both gold plating films had a gold crystal peak.
  • the average crystallite size obtained from the half-width by X-ray diffraction was identified, and the average grain size of the gold crystallite in the gold-plated film obtained by electrodeposition using direct current was It was 33nm.
  • the average particle size of the gold crystallites of the gold-plated film obtained by electrodeposition using a pulse current was 18 nm. From these results, it can be seen that the gold-plated film obtained by electrodeposition using a Nors current has a smaller and uniform gold crystallite average particle size. Such a structure is considered to be a factor of the excellent Vickers hardness.
  • the pulse period is in the range of 10 msec to 275 msec.
  • the duty ratio was 0.001 or more and 0.5 or less
  • the Pitzkers hardness was 160 Hv or more. This is due to the formation of a structure of a size suitable for increasing the hardness of gold crystallites with an average particle size of Sl 7 nm to 25 nm.
  • FIG. 8 and FIG. 9 show the measurement results of the contact resistance of the contact probe formed with a gold-plated film under the conditions of Example 7 and the contact probe bonded with an alloy of gold and Co.
  • Figure 10 shows the average and ⁇ deviation of the contact resistance values based on the results of the effective batches for both contact probes.
  • An effective batch is a batch that excludes batches whose measured values indicate abnormalities.
  • the curve of ⁇ and the curve of ⁇ are the curve of the contact probe formed with a gold-plated film and the curve of the contact probe bonded with an alloy of gold and Co, respectively.
  • the vertical axis represents the frequency of the average value of contact resistance every 1000 times.
  • the ⁇ deviations of the contact probe in which the gold plating film was formed under the conditions of Example 7 and the contact probe in which the gold and Co alloy were bonded were 0.93 and 2.51, respectively. I got it. That is, the contact probe formed with a gold film under the conditions of Example 7 As a result, the variation force S was reduced by about 37% of the ⁇ deviation of the contact resistance of the contact probe with Co alloy. From the above results, it was found that the contact probe in which the gold film was formed under the conditions of Example 7 was excellent in contact resistance and durability. Industrial applicability
  • the present invention can be used in industries that manufacture or use gold-plated films.

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  • General Physics & Mathematics (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

La présente invention concerne une sonde de contact capable de réduire une résistance de contact et présentant une excellente durabilité. Un film de dorure (11c) est obtenu à partir d’un simple élément en or, qui se compose d’une cristallite dont le diamètre moyen se trouve dans une plage comprise entre 17 nm et 25 nm et la dureté Vickers est supérieure ou égale à 160 Hv. Le film de revêtement métallique (11c) se forme sur une partie de la sonde de contact qui vient au contact d’un autre objet au moins pour l’inspection.
PCT/JP2006/325726 2006-01-13 2006-12-25 Sonde de contact WO2007080771A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006-006612 2006-01-13
JP2006006612A JP2007187580A (ja) 2006-01-13 2006-01-13 コンタクトプローブ

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Cited By (1)

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CN105448766A (zh) * 2015-12-31 2016-03-30 上海华虹宏力半导体制造有限公司 功率器件失效点定位方法

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JP6392617B2 (ja) * 2013-10-02 2018-09-19 積水化学工業株式会社 導電性粒子、導電材料及び接続構造体

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JP2001007137A (ja) * 1999-06-24 2001-01-12 Nec Corp 半導体装置の製造方法
JP2002056915A (ja) * 2000-08-10 2002-02-22 Tyco Electronics Amp Kk スプリングコンタクト
WO2003081725A2 (fr) * 2002-03-18 2003-10-02 Nanonexus, Inc. Ressort de contact miniaturise
JP2005290471A (ja) * 2004-03-31 2005-10-20 Asahi Kasei Engineering Kk めっき処理物及びめっき処理方法

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JP2001007137A (ja) * 1999-06-24 2001-01-12 Nec Corp 半導体装置の製造方法
JP2002056915A (ja) * 2000-08-10 2002-02-22 Tyco Electronics Amp Kk スプリングコンタクト
WO2003081725A2 (fr) * 2002-03-18 2003-10-02 Nanonexus, Inc. Ressort de contact miniaturise
JP2005290471A (ja) * 2004-03-31 2005-10-20 Asahi Kasei Engineering Kk めっき処理物及びめっき処理方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105448766A (zh) * 2015-12-31 2016-03-30 上海华虹宏力半导体制造有限公司 功率器件失效点定位方法

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