TW473539B - Solvent composition for liquid delivery chemical vapor deposition of metal organic precursors and precursor composition for liquid delivery chemical vapor deposition - Google Patents

Solvent composition for liquid delivery chemical vapor deposition of metal organic precursors and precursor composition for liquid delivery chemical vapor deposition Download PDF

Info

Publication number
TW473539B
TW473539B TW087119256A TW87119256A TW473539B TW 473539 B TW473539 B TW 473539B TW 087119256 A TW087119256 A TW 087119256A TW 87119256 A TW87119256 A TW 87119256A TW 473539 B TW473539 B TW 473539B
Authority
TW
Taiwan
Prior art keywords
volume
scope
solvent
patent application
parts
Prior art date
Application number
TW087119256A
Other languages
English (en)
Inventor
Thomas H Baum
Gautam Bhandari
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Application granted granted Critical
Publication of TW473539B publication Critical patent/TW473539B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S423/00—Chemistry of inorganic compounds
    • Y10S423/09—Reaction techniques
    • Y10S423/14—Ion exchange; chelation or liquid/liquid ion extraction

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Description

經濟部智慧財產局員工消費合作社印製 473539 A7 __ B7 五、發明說明（1 ) 發_明之背晉 發明之镅域 本發明係關於可有效用於有機金屬前驅物之液體輸送化 學蒸氣沈積之溶劑組成物，該有機金屬前驅物包括金屬（沒 -二酮根）前驅物β 祖關技爇說明 在進行化學蒸氣沈積<CVD)方法之液體輸送法中，將固體 前驅物溶解於適當的溶劑介質中，或將液相前驅物蒸發， 並將典型上與遞送氣體（諸如氬或氮）混合之所產生的前驅 物蒸氣輸送至化學蒸氣沈積反應器。前驅物蒸氣流在反應 器中與加熱基材接觸，而完成一或多種期望成份之自蒸氣 相分解並沈積於基材表面上。 在此種液體輸送CVD方法中，有各式各樣的溶劑被用來 溶解或懸浮前驅物物種，利用各種技術使液體溶液或懸浮 液蒸發，包括在含前驅物之液體排出於其上之加熱元件上 急速蒸發，而使溶劑及前驅物物種揮發。 在許多情況*在CVD方法中使用許多種前驅物於形成多 成份沈積薄膜1希望可對各別的前驅物物種使用單一的溶 劑介質，以使操作容易及簡化方法系統，因而避免如對不 同前驅物物種使用不同溶劑介質所會產生之任何有害的溶 劑-溶劑交互作用。此外，希望用於多種物種之溶劑組成物 不會與前驅物或含金屬分子交互作用而生成不穩定的化學 溶液，由於此種不穩定性會使得整體的組成物不適用於液 體輸送。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4 ·1--^------ 丨^^ 裝----I —1 I ^* — — — — — 1! (請先閱讀背面之注意事項再填寫本頁) 473539 A7 -----B7__ 五、發明說明（2 ) 因此，本發明之目的在於提供一種對CVD前驅物具有寬 廣用途之新穎的溶劑組成物.此CVD前驅物諸如包含具β· 二酮根配位子之金屬有機組成物。 本發明之其他目的及優點由隨後之揭示內容及隨附之申 請專利範圍當可更加明白。 發明夕槪沭 本發明係關於供有機金屬前驅物之液體輸送化學蒸氣沈 積用之溶劑組成物。 本發明之組成物包括比例爲A : B : C之溶劑種類A、Β 及C之混合物，其中A係自約3至約7份體積，B係自約2 至約6份體積，及C係存在直至約3份體積，其中此等體 積份數係以混合物之總體積計，及其中A爲C6-Cs烷烴’ B 爲C8-C12烷烴，A及B彼此不同，及C爲乙二醇二甲醚基 溶劑（乙二醇二甲醚、二乙二醇二甲醚、四乙二醇二甲醚等 等）或聚胺。 在一特殊及較佳態樣中，溶劑組成物可包括體積比例大 約爲5:4:1之辛烷、癸烷及聚胺。 可在溶劑組成物之組成物中有效作爲成份C之較佳的聚 胺種類可爲任何適當的聚胺，例如，Ν，Ν，Ν’，Ν’ -四甲基乙 二胺、^^’^”^-五甲基二伸乙三胺、 Ν,Ν,Ν’，Ν",Ν'-六甲基三伸乙四胺、或其他適當的聚 胺成份。 在另一態樣中，本發明係關於供液體輸送化學蒸氣沈積 用之前驅組成物，包括在溶劑混合物中之至少一種有機金 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) 裝i 1 —--f -訂·--------線邊 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 473539 A7 _ B7 五、發明說明（3 ) 屬前驅物成份，此溶劑混合物包括比例爲A : B : C之溶劑 種類A、B及C之混合物，其中A係自約3至約7份體積， B係自約2至約6份體積，及C係存在直至約3份體積， 其中此等體積份數係以混合物之總體積計及其中A爲 C6-Cs烷烴，B爲Cs-C12烷烴，A及B彼此不同，及C爲乙 二醇二甲醚基溶劑（乙二醇二甲醚 '二乙二醇二甲醚、四乙 二醇二甲醚等等）或聚胺。 在此等組成物中之有機金屬前驅物例如可包括一或多種 金屬沒-二酮鹽及/或其加成物。 本發明之其他態樣、特色、及具體例由隨後之揭示內容 及隨附之申請專利範圍當可更加明白。 圖示之簖里說明 圖1係利用緦、鉍及鉅之沒-二酮鹽前驅物在四氫呋喃： 異丙醇：聚胺之S ·_ 2 : 1溶劑組成物中，用於在1 sot：下蒸 發前驅物溶液及沈積鉬酸緦鉍之液體輸送化學蒸氣沈積系 統之以托耳（t 〇 r r )爲單位之上游壓力成以分鐘爲單位之時 間之函數圖。 圖2係利用緦、鉍及鉬之0 -二酮鹽前驅物，在包含5 : 4 : 1 辛烷：癸烷：聚胺之根據本發明之溶劑組成物中，用於在 前驅物溶液於1 80°C下蒸發後使鉅酸鋸鉍沈積之液體輸送 化學蒸氣沈積系統之以托耳爲單位之上游壓力成以分鐘爲 單位之時間之函數圖。 發明之詳細說明、及其較隹具體例 將以下之美國專利申請案之全體揭示內容倂入本文中： 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公楚1" '—丨丨丨丨_丨丨―丨· .丨—丨_ — -丨丨a11·· — —— — — —· (請先閱讀背面之注意事項再填寫本頁) A7 B7___ 五、發明說明（4 ) 1997年1 1月20日提出申請之美國專利申請案 No · 08 / 97 5，3 72 ; 1995年6月7日提出申請之美國專利申 請案No. 08/484,654; 1995年3月31日提出申請之美國 專利申請案No. 08/41 4, 504 : 1997年10月30日提出申請 之美國專利申請案No. 08/960,91 5 :及1997年1 1月20 日提出申請之美國專利申請案No. 08/976,087。 本發明係以發現可有利地用於有機金屬前驅物之液體輸 送化學蒸氣沈積之溶劑組成物爲基礎，該有機金屬前驅物 諸如，比方說爲第II族金屬之金屬/5 -二酮鹽前驅物《經 發現此種溶劑組成物可極度有利地用於自此等；3 -二酮鹽 前驅物進行金屬之沈積，此卢-二酮鹽前驅物包括金屬諸如 鋸、鉍、鉅等等之0 -二酮鹽基錯合物 本發明之組成物包括比例爲A : B : C之溶劑種類A、B 及C之混合物，其中A係自溶液（A + B + C)之約3至約7份體 積* B係自溶液之約2至約6份體積，及C係存在大於零 直至約3份體積之量，其中此等體積份數係以溶液之總體 積計，及其中A爲C6-Cs烷烴，B爲C8-C12烷烴，A及B彼 此不同，及C爲乙二醇二甲醚基溶劑（乙二醇二甲醚 '二乙 二醇二甲醚、四乙二醇二甲醚等等）或聚胺。根據本發明之 甚佳組成物包括辛烷爲溶劑種類A及癸烷爲溶劑種類B’C 爲聚胺或四乙二醇二甲醚，其中各別的溶劑種類A、B及C 之比爲5 : 4 : 1。 在本發明之一特佳態樣中，使用辛烷：癸烷：聚胺之 5:4:1溶劑組成物作爲用於SrBi2Ta 209之液體輸送化學蒸 紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） m閱讀背面之注意事項再填寫本頁) ----丨 ——訂-- -----1--^- 473539 經濟部智慧財產局員工消費合作社印製 A7 B7 _ 五、發明說明（5 ) 氣沈積之各緦、鉍及鉅/3 -二酮鹽前驅物之溶劑種類。 本發明之溶劑組成物可使/5 -二酮鹽前驅物低壓揮發，並 在蒸發及化學蒸氣沈積方法中提供良好的輸送及最少殘餘 物。 當A : B : C溶劑組成物中之C爲聚胺時，溶劑組成物之 聚胺成份可爲任何適當的聚胺。其例子包括Ν,Ν,Ν',Ν’-四 甲基乙二胺、^1^’，]^州"-五甲基二伸乙三胺、 Ν，Ν,Ν’，Ν" ,Ν’ ··，Ν" ’ -六甲基三伸乙四胺等等。 可配合本發明之溶劑組成物使用之金屬沒-二酮鹽前驅 物包括/3 -二酮根組成物，其金屬組成可爲任何適當的金 屬，例如，緦、鉍、鉅、鈮、鉛、鈣、鋇、鐵、鋁、銃、 釔、鈦、鎢、鉬及鑭系金屬諸如Ce、La、Pr、Ho、Eu、Yb 等等。/3 -二酮根配位子可爲任何適當種類，例如，選自包 括下列之沒-二酮根配位子： 2,2,6,6 -四甲基- 3,5 -庚二酮根； 1，1，1 -三氟· 2,4 -戊二酮根； 1，1 , 1 , 5 , 5，5 -六氟-2，4 -戊二酮根； 6,6,7,7,8，&，8-七氟-2,2-二甲基-3,5-辛二酮根； 2，2, 7 -三甲基-3 ,5-辛二酮根； ^，^。，^/。，了”-十氟-二^-庚二酮根：及 1，1,1-三氟-6-甲基-2,4 -庚二酮根》 本發明之溶劑組成物具有使用鉍前驅物，諸如無水單環 參（2,2,6,6-四甲基-3, 5 -庚二酮）鉍及聚胺加成 Sr(thd)2，而用於沈積含鉍薄膜之特殊用途。此種金屬β - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 8 . ---------裝---------訂--------- (請先閱讀背面之注意事項再填寫本頁) 473539 A7 B7 五、發明說明（6 ) 二酮鹽化合物可容易地使用於本發明之溶劑組成物中，而 製備優良的含鉍薄膜•諸如SrBi2Ta209。 本發明之特色及優點由以下的非限制性實施例作更完整 的展示，其中除非特意說明，否則所有份數及百分比係以 重量計。 實施例 將包含7原子百分比Sr (thd)2(五甲基二伸乙三胺）、55 原子百分比Bi(tlid)3& 38原子百分比TaiOiPiKthd)， 其中thd =2,2,6,6-四甲基-3, 5-庚二酮根，於5:4:1辛 烷：癸烷：五甲基二伸乙三胺之溶劑混合物中之溶液計童 至液體輸送化學蒸氣沈積系統，其中使前驅物溶液在190 °C下急速蒸發，然後在400sccm氬中送至CVD室。將前驅 物蒸氣與llOOsccm氧混合，然後再與lOOsccni氬混合，使 結合爲7:3氧：氬比，並通過蓮蓬頭分散器而至維持在χ 托耳之化學蒸氣沈積室。在經加熱至38 5 t表面溫度之基 材上發生分解。基材爲覆蓋鉑之0.5微米行寬Si 02(TE0S) 結構。在基材上所產生之SBT薄膜高度一致，其最小的s,BT 厚度大於最大厚度之90%，與微電子製造的裝置要求一 致。沈積之低溫及非晶形特性有助於沈積薄膜之仿形塗 布。在此等條件下，組成物變化低於相對〇 . 5%(其係使用 X -射線登光方法之精確度）。 圖1係在1 80°C下蒸發前驅物溶液，及利用緦、鉍及鉅 之石-二酮鹽前驅物在四氫呋喃：異丙醇：聚胺之8:2:1 溶劑組成物中’用於沈積钽酸緦鉍之液體輸送系統之以托 本紙張尺度適用中國國家標準（CNSM4規格（210 X 297公髮） (請先閱讀背面之注意事項再填寫本頁) 裝----- tT---------^·Γ 經濟部智慧財產局員工消費合作社印製 A7 ____B7__ 五、發明說明（7 ) 耳爲早位之上游壓力成以分鐘爲單彳立之時間之函數圖。此 種溶劑組成物係迄今爲止在技術中用於前驅物諸如金屬 -二酮鹽及其加成物之溶劑組成物之典型^ 圖2顯不用於在本發明之5 : 4 : 1辛院：癸垸：五甲基二 伸乙二1女溶劑組成物中’蒸發有機金屬前驅物之液體輸送 系統之上游壓力。此種前驅物溶液之前驅物成份爲 8]：(〇€1)2(五甲基二伸乙三胺）、]31(〇(1)3及
Ta{OiPr)4(thd.)’ 其中 11](1=2,2,6,6-四甲基-3,5-庚二酮 根’其中鉍試劑爲無水單環形態。圖2之圖顯示在1 8 〇 下蒸發前驅物溶液之以托耳爲單位之上游壓力成以分鐘爲 單位之時間之函數圖。如圖所示’上游壓力在方法之時間 架構上極度均勻，顯示前驅物在此等溶劑混合物中有良好 的蒸發及輸送性質，並伴隨低量的殘餘物（顯著量的殘餘物 指示使上游壓力顯著增加的阻塞）。 經濟部智慧財產局員工消費合作社印製 圖1之曲線所示之壓力的陡增指示前驅物分解，以致阻 塞液體輸送系統。由於此種阻塞的結果，液體輸送系統無 法將期望量的前驅物在期望速率下輸送至下游的化學蒸.氣 浣積室，因而使整體方法效率降低。 因此，圖1及2之圖顯示本發明之溶劑組成构之優良的 溶劑效率。 雖然本發明已就文中之特殊特色、態樣及具體例作說明 性描述，但應明瞭本發明之用途並不因此受限，熟悉技術 人士當可容易地個自提出其他的變化、修改及具體例。因 此，應將本發明與記述於後之申請專利範圍一致地作廣義 本紙張尺度適用t國國家標準（CNS)A4規格（210 X 297公ί ) 10 473539 A7 _B7 五、發明說明（8 ) 釋解 (請先閱讀背面之注意事項再填寫本頁) 裝丨 訂---------線* 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 11

Claims (1)

  1. 473539— 々* 告本 • ' 1 .....................% I!修正 ^ .r： _ud Αδ Β8 C8 D8 經濟部智慧財產局員工消費合作社印製 六、 申請專利範圍 1 . 一種供有機金屬前驅物之液體輸送化學蒸氣沈積用之 溶劑組成物，包括比例爲A : B : C之溶劑種類A、B及C 之混合物，其中A係自3至7份體積，B係自2.至6份體 積，及C係存在直至3份體積，其中此等體積份數係以混 合物之總體積計’及其中人爲C6-C8烷烴，B爲C8-C12烷烴， A及B彼此不同，及C係選自包括乙二醇二甲醚基溶劑及 聚胺。 2 .如申請專利範圍第1項之組成物，其中，該溶劑種類 C係選自包括乙二醇二甲醚、二乙二醇二甲醚、及四乙二 醇二甲醚之乙二醇二甲醚基溶劑。 3 ·如申請專利範圍第1項之組成物，其中，該溶劑種類 C係選自包括N，N,NW-四甲基乙二胺、Ν,Ν,Ν’，Ν'Ν"-五甲基二伸乙三胺、及H Ν，，Ν" , Ν，"，Ν ··，-六甲基三伸乙 四胺之聚胺。 4 .如申請專利範圍第1項之組成物，其中包括比例爲辛 烷：癸烷：聚胺之辛烷、癸烷及聚胺，其中辛烷係自3至 7份體積，癸烷係自2至6份體積，及聚胺係存在直至3 份體積，其中該體積份數係以溶劑組成物之總體積計。 5 ·如申請專利範圍第1項之組成物，其中，A : B : C以 體積計爲5 : 4 Μ。 6 .如申請專利範圍第1項之組成物，其中，該溶劑種類 〔包括^^^”川”-五甲基二伸乙三胺。 7 ·如申請專利範圍第1項之組成物，其中，該溶劑種類 C包括N，N，N’，N·· ”，Ν"，-六甲基三伸乙四胺》 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (諳先閱讀背面之注意事項再填寫本頁) 裝 δ.ι*· 線#. 六、申請專利範圍 8 .如申請專利範圍第1項之組成物，其中，該溶劑種類 C包括Ν,Ν,Ν’，Ν’-四甲基乙二胺。 (請先閱讀背面之注意事項再填寫本頁) 9. 如申請專利範圍第1項之組成物，其中，該組成物包 括各別體積比爲5:4:1之辛烷、癸烷及聚胺。 10. —種供液體輸送化學蒸氣沈積用之前驅組成物，包括 在溶劑組成物中之金屬；5 -二酮鹽前驅物，該溶劑組成物包 括比例爲A: B: C之溶劑種類Α、Β及C之混合物，其中A 係自3至7份體積，B係自2至6份體積，及C係存在直 至3份體積，其中該體積份數係以混合物之總體積計，及 其中A爲C6-C8烷烴，B爲C8-C12烷烴，A及B彼此不同， 及C係選自包括乙二醇二甲醚基溶劑及聚胺。 1 1.如申請專利範圍第1 〇項之前驅組成物，其中*該溶 劑種類C係選自包括乙二醇二甲醚、二乙二醇二甲醚、及 四乙二醇二甲醚之乙二醇二甲醚基溶劑。 12.如申請專利範圔第10項之前驅組成物’其中，該溶 劑種類C係選自包括Ν,Ν,Ν',Ι'Γ-四甲基乙二胺、 經濟部智慧財產局員工消費合作社印製 Ν，Ν，Ν，，Ν "，Ν "-五甲基二伸乙三胺、及 Ν，Ν，Ν，，Ν ·· , Ν 1 ··，Ν -六甲基三伸乙四胺之聚胺。 1 3 .如申請專利範圍第1 〇項之前驅組成物’其中包括比 例爲辛烷：癸烷：聚胺之辛烷、癸烷及聚胺之溶劑混合物， 其中辛烷係自3至7份體積’癸烷係自2至6份體積’及 聚胺係存在直至3份體積，其中該體積份數係以溶劑混合 物之總體積計。 1 4 .如申請專利範圍第10項之前驅組成物’其中，A : Β : 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公楚） 2 473539 09889s ABCD 六、申請專利範圍 C以體積計爲5 : 4 : 1。 (請先閱讀背面之注意事項再填寫本頁) 1 5 如申請專利範圍第1 〇項之前驅組成物，其中，該溶 劑種類C包括Ν,Ν,Ν’，Ν'ίΓ-五甲基二伸乙三歧。 16‘如申請專利範圍第1〇項之前驅組成物，其中，該溶 劑種類C包括N，N，N，，N，'，N ’ ”，N"，-六甲基三伸乙四胺。 1 7 .如申請專利範圍第1 〇項之前驅組成物，其中，該溶 劑種類C包括Ν,Ν，Ν’，Ν’ -四甲基乙二胺。 18.如申請專利範圍第1〇項之前驅組成物，身中，該有 機金屬前驅物包括金屬yS -二酮鹽前驅物° 19·如申請專利範圍第1〇項之前驅組成物，教中，該有 機金屬前驅物包括第II族金屬。 20.如申請專利範圍第10項之前驅組成物，其中，該有 機金屬前驅物包含選自包括Bi、Ca、Cu、Sr、Ba、pb、Na、 Fe、Al、Sc、Y、Ti、Nb、Ta、W、Mo 及鋼系金壤之金屬。 21 .如申請專利範圍第10項之前驅組成物*其中，該有 機金屬前驅物包括緦、鉍及鉅之石-二酮鹽錯合物。 經濟部智慧財產局員工消費合作社印製 22.如申請專利範圍第10項之前驅組成物，其中，該有 機金屬前驅物包括S r ( t h d ) 2 (五甲基二伸乙三胺）、 Bi( thd)3 及 Ta(0iPr)4( thd)，其中 2,2,6,6-四甲基 -3，5 -庚二酮根。 23 .如申請專利範圍第1 0項之前驅組成物，其中，該有 機金屬前驅钧包括/9-二酮根金屬錯合物，其中該β -二_ 根配位子係選自包括： 2 , 2 , 6，6 -四甲基· 3，5 -庚二酮根： 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 473539 A8 B8 C8 D8 六、申請專利範圍 戊 - 4 2 - 氟三 4 2 -2氟 氟七 六8- 一 f 5 8 5 8 5 7 1 7 IX ΊΧ 根 酮 二 辛 I 5 3 根基 酮甲 :二二 根戊2-酮 2 2 三 三 .V-5， 〆0 基 6 -甲5 氣 6 根 酮 二 辛 1 5 3 7 7 4 2 I 基 甲 及 根 酮 二。 庚根 4’ i -2二 氟庚 (請先閲讀背面之注意事項再填寫本頁) 裝 訂---- •線__ 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4
TW087119256A 1997-11-20 1998-11-21 Solvent composition for liquid delivery chemical vapor deposition of metal organic precursors and precursor composition for liquid delivery chemical vapor deposition TW473539B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/975,372 US5916359A (en) 1995-03-31 1997-11-20 Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition

Publications (1)

Publication Number Publication Date
TW473539B true TW473539B (en) 2002-01-21

Family

ID=25522960

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087119256A TW473539B (en) 1997-11-20 1998-11-21 Solvent composition for liquid delivery chemical vapor deposition of metal organic precursors and precursor composition for liquid delivery chemical vapor deposition

Country Status (7)

Country Link
US (1) US5916359A (zh)
EP (1) EP1054934A4 (zh)
JP (2) JP4861550B2 (zh)
KR (1) KR100530480B1 (zh)
AU (1) AU1701299A (zh)
TW (1) TW473539B (zh)
WO (1) WO1999027030A1 (zh)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6511706B1 (en) 1990-07-06 2003-01-28 Advanced Technology Materials, Inc. MOCVD of SBT using tetrahydrofuran-based solvent system for precursor delivery
US6111124A (en) 1997-10-30 2000-08-29 Advanced Technology Materials, Inc. Lewis base adducts of anhydrous mononuclear tris(β-diketonate) bismuth compositions for deposition of bismuth-containing films, and method of making the same
US7323581B1 (en) 1990-07-06 2008-01-29 Advanced Technology Materials, Inc. Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition
US6344079B1 (en) * 1995-03-31 2002-02-05 Advanced Technology Materials, Inc. Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition
US6444264B2 (en) 1995-03-31 2002-09-03 Advanced Technology Materials, Inc. Method for liquid delivery CVD utilizing alkane and polyamine solvent compositions
US6214105B1 (en) * 1995-03-31 2001-04-10 Advanced Technology Materials, Inc. Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition
US6303391B1 (en) * 1997-06-26 2001-10-16 Advanced Technology Materials, Inc. Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices
JP3957112B2 (ja) * 1997-10-31 2007-08-15 三菱マテリアル株式会社 複合酸化物系誘電体薄膜形成用の溶液原料と誘電体薄膜
US6265026B1 (en) * 1998-01-16 2001-07-24 The Regents Of The University Of California Vapor phase deposition
US6312816B1 (en) * 1998-02-20 2001-11-06 Advanced Technology Materials, Inc. A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators
US6461675B2 (en) 1998-07-10 2002-10-08 Cvc Products, Inc. Method for forming a copper film on a substrate
US6190732B1 (en) 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
KR100289947B1 (ko) * 1998-09-28 2001-05-15 신현국 고유전성박막증착용전구체착화합물및그를이용한박막증착방법
WO2000032608A1 (de) * 1998-11-26 2000-06-08 Infineon Technologies Ag Komplexverbindung eines elements der iv nebengruppe
US6294836B1 (en) 1998-12-22 2001-09-25 Cvc Products Inc. Semiconductor chip interconnect barrier material and fabrication method
US6316797B1 (en) * 1999-02-19 2001-11-13 Advanced Technology Materials, Inc. Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
US6204204B1 (en) * 1999-04-01 2001-03-20 Cvc Products, Inc. Method and apparatus for depositing tantalum-based thin films with organmetallic precursor
US6245655B1 (en) 1999-04-01 2001-06-12 Cvc Products, Inc. Method for planarized deposition of a material
US6623656B2 (en) 1999-10-07 2003-09-23 Advanced Technology Materials, Inc. Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same
US7094284B2 (en) * 1999-10-07 2006-08-22 Advanced Technology Materials, Inc. Source reagent compositions for CVD formation of high dielectric constant and ferroelectric metal oxide thin films and method of using same
US6348705B1 (en) 1999-12-22 2002-02-19 Advanced Technology Materials, Inc. Low temperature process for high density thin film integrated capacitors and amorphously frustrated ferroelectric materials therefor
US6627995B2 (en) 2000-03-03 2003-09-30 Cvc Products, Inc. Microelectronic interconnect material with adhesion promotion layer and fabrication method
KR20010109957A (ko) * 2000-06-05 2001-12-12 윤종용 엘비티 용액, 엘비티 용액의 제조방법 및 이를 이용한엘비티 박막과 전자 소자의 제조방법
JP2004507551A (ja) * 2000-08-28 2004-03-11 アドバンスト　テクノロジー　マテリアルズ，インコーポレイテッド ソース材料組成物および化学的蒸着法による基板上への金属膜形成方法
US6444263B1 (en) 2000-09-15 2002-09-03 Cvc Products, Inc. Method of chemical-vapor deposition of a material
US6960675B2 (en) * 2003-10-14 2005-11-01 Advanced Technology Materials, Inc. Tantalum amide complexes for depositing tantalum-containing films, and method of making same
KR100519800B1 (ko) * 2004-01-13 2005-10-10 삼성전자주식회사 란타늄 산화막의 제조방법 및 이를 이용한 모스 전계효과트랜지스터 및 캐패시터의 제조방법
WO2005121400A1 (ja) * 2004-06-10 2005-12-22 Mitsubishi Materials Corporation 有機金属化学蒸着法用溶液原料及び該原料を用いて作製された複合酸化物系誘電体薄膜
US7166732B2 (en) * 2004-06-16 2007-01-23 Advanced Technology Materials, Inc. Copper (I) compounds useful as deposition precursors of copper thin films
JP4738775B2 (ja) * 2004-08-24 2011-08-03 株式会社豊島製作所 ランタニド系金属含有薄膜製造に用いるｃｖｄ用原料溶液及びこれを用いた薄膜の製造方法
WO2007005088A2 (en) * 2005-07-01 2007-01-11 Honeywell International Inc. Vaporizable metalorganic compounds for deposition of metals and metal-containing thin films
WO2008069821A1 (en) * 2006-12-05 2008-06-12 Advanced Technology Materials, Inc. Metal aminotroponiminates, bis-oxazolinates and guanidinates
US8524931B2 (en) * 2007-01-17 2013-09-03 Advanced Technology Materials, Inc. Precursor compositions for ALD/CVD of group II ruthenate thin films
US7750173B2 (en) * 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
WO2008128141A2 (en) * 2007-04-12 2008-10-23 Advanced Technology Materials, Inc. Zirconium, hafnuim, titanium, and silicon precursors for ald/cvd
US20080254218A1 (en) 2007-04-16 2008-10-16 Air Products And Chemicals, Inc. Metal Precursor Solutions For Chemical Vapor Deposition
US20090275164A1 (en) * 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Bicyclic guanidinates and bridging diamides as cvd/ald precursors
US8168811B2 (en) * 2008-07-22 2012-05-01 Advanced Technology Materials, Inc. Precursors for CVD/ALD of metal-containing films
US8663735B2 (en) * 2009-02-13 2014-03-04 Advanced Technology Materials, Inc. In situ generation of RuO4 for ALD of Ru and Ru related materials
US8507704B2 (en) * 2009-09-08 2013-08-13 Air Products And Chemicals, Inc. Liquid composition containing aminoether for deposition of metal-containing films
KR102621816B1 (ko) * 2020-06-23 2024-01-04 삼성에스디아이 주식회사 박막 증착용 조성물, 박막 증착용 조성물을 이용한 박막의 제조 방법, 박막 증착용 조성물로부터 제조된 박막, 및 박막을 포함하는 반도체 소자

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2839421A (en) * 1955-04-06 1958-06-17 Du Pont An alkoxy aluminum chelate, a dispersion of it in an organic liquid and a water repellant porous object
US3076834A (en) * 1960-03-04 1963-02-05 Dow Chemical Co Chelate-phenol adducts
US3653953A (en) * 1970-01-26 1972-04-04 North American Rockwell Nonaqueous electroless plating
US3647712A (en) * 1970-09-04 1972-03-07 Kerr Mc Gee Chem Corp Mixture of alcohols and fluorinated beta-diketones useful as extractant in recovery of vanadium
US4147556A (en) * 1972-01-12 1979-04-03 Ppg Industries, Inc. Nonflammable beta diketonate composition
SU530875A1 (ru) * 1974-12-03 1976-10-05 Ордена Ленина Институт Химической Физики Ан Ссср Способ стабилизации ароматических и парафиновых углеводородов
US4529427A (en) * 1977-05-19 1985-07-16 At&T Bell Laboratories Method for making low-loss optical waveguides on an industrial scale
US4401474A (en) * 1979-12-03 1983-08-30 Ppg Industries, Inc. Pyrolytic coating reactant for defect and durability control
US4281037A (en) * 1980-08-08 1981-07-28 Dap, Inc. Cleaning and priming composition containing titanium acetylacetonate and method
JPS58203443A (ja) * 1982-05-24 1983-11-26 Hitachi Ltd ホトマスクの白点欠陥修正用組成物
FR2575936B1 (fr) * 1985-01-15 1987-02-13 Rhone Poulenc Spec Chim Procede de purification de solutions aqueuses de sels de terres rares par extraction liquide-liquide
US4898842A (en) * 1986-03-03 1990-02-06 International Business Machines Corporation Organometallic-derived cordierite and other compounds comprising oxides of silicon
JP2729373B2 (ja) * 1987-01-07 1998-03-18 東京応化工業 株式会社 金属酸化膜形成用塗布液
US5034372A (en) * 1987-12-07 1991-07-23 Mitsubishi Denki Kabushiki Kaisha Plasma based method for production of superconductive oxide layers
JP2615469B2 (ja) * 1988-04-21 1997-05-28 松下電器産業株式会社 金属硫化物薄膜の製造方法
US5100871A (en) * 1989-11-28 1992-03-31 General Atomics Method for preparing rare earth-barium-cuprate pre-ceramic resins and superconductive materials prepared therefrom
US5120703A (en) * 1990-04-17 1992-06-09 Alfred University Process for preparing oxide superconducting films by radio-frequency generated aerosol-plasma deposition in atmosphere
US5225561A (en) * 1990-07-06 1993-07-06 Advanced Technology Materials, Inc. Source reagent compounds for MOCVD of refractory films containing group IIA elements
US5204314A (en) * 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
US5280012A (en) * 1990-07-06 1994-01-18 Advanced Technology Materials Inc. Method of forming a superconducting oxide layer by MOCVD
US5859274A (en) * 1997-10-30 1999-01-12 Advanced Technology Materials, Inc. Anhydrous mononuclear tris(β-diketonate) bismuth compositions for deposition of bismuth-containing films, and method of making the same
US5820664A (en) * 1990-07-06 1998-10-13 Advanced Technology Materials, Inc. Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same
US5840897A (en) * 1990-07-06 1998-11-24 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
DE4108731A1 (de) * 1991-03-18 1992-09-24 Solvay Barium Strontium Gmbh Neuartige erdalkalimetall-heptandionat-verbindungen
US5165960A (en) * 1991-07-29 1992-11-24 Ford Motor Company Deposition of magnesium fluoride films
US5376409B1 (en) * 1992-12-21 1997-06-03 Univ New York State Res Found Process and apparatus for the use of solid precursor sources in liquid form for vapor deposition of materials
GB2274456A (en) * 1993-01-22 1994-07-27 Timothy John Leedham Volatile rare earth beta-diketone complexes
US5412129A (en) * 1994-06-17 1995-05-02 Dicarolis; Stephen A. Stabilization of precursors for thin film deposition
US5696384A (en) * 1994-12-27 1997-12-09 Mitsubishi Materials Corporation Composition for formation of electrode pattern
US6303391B1 (en) * 1997-06-26 2001-10-16 Advanced Technology Materials, Inc. Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices

Also Published As

Publication number Publication date
EP1054934A4 (en) 2004-04-21
US5916359A (en) 1999-06-29
AU1701299A (en) 1999-06-15
JP4861550B2 (ja) 2012-01-25
WO1999027030A1 (en) 1999-06-03
EP1054934A1 (en) 2000-11-29
JP2001524597A (ja) 2001-12-04
KR100530480B1 (ko) 2005-11-23
JP2012001819A (ja) 2012-01-05
KR20010040276A (ko) 2001-05-15

Similar Documents

Publication Publication Date Title
TW473539B (en) Solvent composition for liquid delivery chemical vapor deposition of metal organic precursors and precursor composition for liquid delivery chemical vapor deposition
TWI242055B (en) Process for metal metalloid oxides and nitrides with compositional gradients
JP4565897B2 (ja) 薄膜形成用原料及び薄膜の製造方法
US6238734B1 (en) Liquid precursor mixtures for deposition of multicomponent metal containing materials
US6960675B2 (en) Tantalum amide complexes for depositing tantalum-containing films, and method of making same
US6214105B1 (en) Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition
US6444264B2 (en) Method for liquid delivery CVD utilizing alkane and polyamine solvent compositions
US20020068129A1 (en) MOCVD of SBT using toluene-based solvent system for precursor delivery
KR20210041843A (ko) 금속 함유 박막 형성을 위한 신규 전구체 및 이를 이용한 금속 함유 박막 형성 방법 및 상기 금속 함유 박막을 포함하는 반도체 소자.
US6504015B2 (en) Tetrahydrofuran-adducted group II β-diketonate complexes as source reagents for chemical vapor deposition
US6344079B1 (en) Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition
WO2017203775A1 (ja) 薄膜形成用原料及び薄膜の製造方法
TW583333B (en) Deposition and annealing of multicomponent ZrSnTi and HfSnTi oxide thin films using solventless liquid mixture of precursors
JP2023527037A (ja) 金属元素膜上に蒸着されたモリブデン含有膜を形成する方法
JP5214191B2 (ja) 薄膜形成用原料及び薄膜の製造方法
KR20120056827A (ko) 고온에서 원자층 침착에 의해 침착된 고 유전율 막
US6511706B1 (en) MOCVD of SBT using tetrahydrofuran-based solvent system for precursor delivery
WO2008111850A2 (en) Synthesis of molecular metalorganic compounds
US5952047A (en) CVD precursors and film preparation method using the same
JP4107923B2 (ja) イットリウム含有複合酸化物薄膜の製造方法
JP2004256510A (ja) Ｃｖｄ用ビスマス原料溶液及びこれを用いたビスマス含有薄膜の製造方法
TW567241B (en) Copper material for chemical vapor deposition and process for forming thin film using the same
JP4745137B2 (ja) 薄膜形成用原料、薄膜の製造方法及びハフニウム化合物
JP2001214268A (ja) 化学気相成長用アルミニウム原料及びこれを用いた薄膜の製造方法
JPH10324970A (ja) Ｃｖｄ用原料およびこれを用いた成膜法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees