TW439001B - Exposing methods in photolithography used for manufacturing microlectronic devices and a manufacturing method a liquid crystal display using the same - Google Patents
Exposing methods in photolithography used for manufacturing microlectronic devices and a manufacturing method a liquid crystal display using the same Download PDFInfo
- Publication number
- TW439001B TW439001B TW087106712A TW87106712A TW439001B TW 439001 B TW439001 B TW 439001B TW 087106712 A TW087106712 A TW 087106712A TW 87106712 A TW87106712 A TW 87106712A TW 439001 B TW439001 B TW 439001B
- Authority
- TW
- Taiwan
- Prior art keywords
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- boundary
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- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 36
- 238000000034 method Methods 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000206 photolithography Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 24
- 239000011159 matrix material Substances 0.000 claims abstract description 9
- 239000010409 thin film Substances 0.000 claims description 8
- 238000004377 microelectronic Methods 0.000 abstract description 7
- 239000003990 capacitor Substances 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000002079 cooperative effect Effects 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 101100232411 Mus musculus Clns1a gene Proteins 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13625—Patterning using multi-mask exposure
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970066461A KR100502794B1 (ko) | 1997-12-06 | 1997-12-06 | 액정 표시 장치의 패널 제조 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW439001B true TW439001B (en) | 2001-06-07 |
Family
ID=19526616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087106712A TW439001B (en) | 1997-12-06 | 1998-04-30 | Exposing methods in photolithography used for manufacturing microlectronic devices and a manufacturing method a liquid crystal display using the same |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5945256A (https=) |
| JP (1) | JPH11174402A (https=) |
| KR (1) | KR100502794B1 (https=) |
| TW (1) | TW439001B (https=) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100502797B1 (ko) * | 1997-12-01 | 2005-10-19 | 삼성전자주식회사 | 액정 표시 장치 및 그의 제조 방법 |
| KR100282695B1 (ko) * | 1998-04-28 | 2001-03-02 | 윤종용 | 반도체 장치의 제조 방법 |
| TW491959B (en) * | 1998-05-07 | 2002-06-21 | Fron Tec Kk | Active matrix type liquid crystal display devices, and substrate for the same |
| US6306561B1 (en) * | 1999-03-04 | 2001-10-23 | National Semiconductor Corporation | Double metal pixel array for light valve utilizing lateral sublithographic spacer isolation |
| KR100686228B1 (ko) | 2000-03-13 | 2007-02-22 | 삼성전자주식회사 | 사진 식각용 장치 및 방법, 그리고 이를 이용한 액정 표시장치용 박막 트랜지스터 기판의 제조 방법 |
| JP4401551B2 (ja) * | 2000-09-21 | 2010-01-20 | エーユー オプトロニクス コーポレイション | 液晶表示装置の製造方法、表示装置の製造方法、及び液晶表示装置 |
| KR100848087B1 (ko) * | 2001-12-11 | 2008-07-24 | 삼성전자주식회사 | 기판 위에 패턴을 형성하는 방법 및 이를 이용한 액정표시 장치용 기판의 제조 방법 |
| WO2003052502A1 (en) * | 2001-12-14 | 2003-06-26 | Samsung Electronics Co., Ltd. | A manufacturing method of liquid crystal display |
| US7142279B2 (en) * | 2001-12-14 | 2006-11-28 | Samsung Electronics Co., Ltd. | Divisionally exposing an active area in LCD with a plurality of shots |
| KR100840322B1 (ko) * | 2002-02-19 | 2008-06-20 | 삼성전자주식회사 | 액정 표시 장치의 패널 제조 방법 |
| KR100491821B1 (ko) * | 2002-05-23 | 2005-05-27 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
| JP4328515B2 (ja) * | 2002-11-19 | 2009-09-09 | Ｎｅｃ液晶テクノロジー株式会社 | 液晶表示装置及びその製造方法 |
| JP4365594B2 (ja) | 2003-01-27 | 2009-11-18 | シャープ株式会社 | パターン形成方法、薄膜トランジスタ基板の製造方法、液晶表示装置の製造方法、及び露光マスク |
| KR100929672B1 (ko) * | 2003-03-13 | 2009-12-03 | 삼성전자주식회사 | 액정 표시 장치용 표시판의 제조 방법 |
| JP4372576B2 (ja) * | 2003-03-19 | 2009-11-25 | シャープ株式会社 | 露光マスクおよびパターン露光方法 |
| KR100968566B1 (ko) * | 2003-07-24 | 2010-07-08 | 삼성전자주식회사 | 액정 표시 장치 및 이에 포함된 표시판의 제조 방법 |
| KR100692683B1 (ko) * | 2003-08-25 | 2007-03-14 | 비오이 하이디스 테크놀로지 주식회사 | 액정표시장치의 화소전극 형성방법 |
| TWI225961B (en) * | 2003-11-17 | 2005-01-01 | Au Optronics Corp | Method of fabricating a liquid crystal display |
| KR100925984B1 (ko) * | 2004-10-26 | 2009-11-10 | 엘지디스플레이 주식회사 | 액정표시장치 제조방법 |
| US7061581B1 (en) * | 2004-11-22 | 2006-06-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7898641B2 (en) * | 2004-12-02 | 2011-03-01 | Sharp Kabushiki Kaisha | Production process of a display device, and a display device |
| CN104503128B (zh) * | 2014-12-19 | 2018-01-09 | 深圳市华星光电技术有限公司 | 用于显示器的彩膜基板的制造方法 |
| KR20210147640A (ko) | 2020-05-29 | 2021-12-07 | 동우 화인켐 주식회사 | 노광 패턴, 이의 형성에 사용되는 노광 마스크, 및 이를 이용한 노광 패턴 형성 방법 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH061313B2 (ja) * | 1985-02-06 | 1994-01-05 | シャープ株式会社 | 液晶表示装置 |
| US5486896A (en) * | 1993-02-19 | 1996-01-23 | Nikon Corporation | Exposure apparatus |
| JPH06324473A (ja) * | 1993-05-10 | 1994-11-25 | Nikon Corp | フオトマスク及び露光方法 |
| EP0940710A3 (en) * | 1993-12-07 | 1999-12-22 | Kabushiki Kaisha Toshiba | Display device and fabrication method thereof |
| JPH09236930A (ja) * | 1995-12-26 | 1997-09-09 | Fujitsu Ltd | パターン形成方法、一組の露光マスク、薄膜トランジスタマトリクス装置及びその製造方法、液晶表示装置及びその製造方法 |
| US5795686A (en) * | 1995-12-26 | 1998-08-18 | Fujitsu Limited | Pattern forming method and method of manufacturing liquid crystal display device |
| JP3825515B2 (ja) * | 1996-01-17 | 2006-09-27 | 株式会社東芝 | 液晶表示装置の製造方法 |
| JPH11119410A (ja) * | 1997-10-14 | 1999-04-30 | Fujitsu Ltd | パターン設計方法及びパターン設計装置 |
-
1997
- 1997-12-06 KR KR1019970066461A patent/KR100502794B1/ko not_active Expired - Fee Related
-
1998
- 1998-04-28 US US09/066,908 patent/US5945256A/en not_active Expired - Lifetime
- 1998-04-30 TW TW087106712A patent/TW439001B/zh not_active IP Right Cessation
- 1998-05-18 JP JP10135481A patent/JPH11174402A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11174402A (ja) | 1999-07-02 |
| KR100502794B1 (ko) | 2005-10-14 |
| US5945256A (en) | 1999-08-31 |
| KR19990047901A (ko) | 1999-07-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |