JPH11174402A - 微細電子装置の製造時に用いる写真工程における露光方法およびこれを用いた液晶表示装置の製造方法 - Google Patents

微細電子装置の製造時に用いる写真工程における露光方法およびこれを用いた液晶表示装置の製造方法

Info

Publication number
JPH11174402A
JPH11174402A JP10135481A JP13548198A JPH11174402A JP H11174402 A JPH11174402 A JP H11174402A JP 10135481 A JP10135481 A JP 10135481A JP 13548198 A JP13548198 A JP 13548198A JP H11174402 A JPH11174402 A JP H11174402A
Authority
JP
Japan
Prior art keywords
region
boundary
regions
liquid crystal
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10135481A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11174402A5 (https=
Inventor
Dong-Gyo Kim
東 奎 金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH11174402A publication Critical patent/JPH11174402A/ja
Publication of JPH11174402A5 publication Critical patent/JPH11174402A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13625—Patterning using multi-mask exposure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP10135481A 1997-12-06 1998-05-18 微細電子装置の製造時に用いる写真工程における露光方法およびこれを用いた液晶表示装置の製造方法 Pending JPH11174402A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1997P66461 1997-12-06
KR1019970066461A KR100502794B1 (ko) 1997-12-06 1997-12-06 액정 표시 장치의 패널 제조 방법

Publications (2)

Publication Number Publication Date
JPH11174402A true JPH11174402A (ja) 1999-07-02
JPH11174402A5 JPH11174402A5 (https=) 2005-10-06

Family

ID=19526616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10135481A Pending JPH11174402A (ja) 1997-12-06 1998-05-18 微細電子装置の製造時に用いる写真工程における露光方法およびこれを用いた液晶表示装置の製造方法

Country Status (4)

Country Link
US (1) US5945256A (https=)
JP (1) JPH11174402A (https=)
KR (1) KR100502794B1 (https=)
TW (1) TW439001B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006148123A (ja) * 2004-11-22 2006-06-08 Asml Netherlands Bv リソグラフィ装置及びデバイス製造方法
US7267912B2 (en) 2003-03-19 2007-09-11 Sharp Kabushiki Kaisha Exposure mask and pattern exposure method
US7279257B2 (en) 2003-01-27 2007-10-09 Sharp Kabushiki Kaisha Pattern forming method, method of manufacturing thin film transistor substrate, method of manufacturing liquid crystal display and exposure mask

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100502797B1 (ko) * 1997-12-01 2005-10-19 삼성전자주식회사 액정 표시 장치 및 그의 제조 방법
KR100282695B1 (ko) * 1998-04-28 2001-03-02 윤종용 반도체 장치의 제조 방법
TW491959B (en) * 1998-05-07 2002-06-21 Fron Tec Kk Active matrix type liquid crystal display devices, and substrate for the same
US6306561B1 (en) * 1999-03-04 2001-10-23 National Semiconductor Corporation Double metal pixel array for light valve utilizing lateral sublithographic spacer isolation
KR100686228B1 (ko) 2000-03-13 2007-02-22 삼성전자주식회사 사진 식각용 장치 및 방법, 그리고 이를 이용한 액정 표시장치용 박막 트랜지스터 기판의 제조 방법
JP4401551B2 (ja) * 2000-09-21 2010-01-20 エーユー オプトロニクス コーポレイション 液晶表示装置の製造方法、表示装置の製造方法、及び液晶表示装置
KR100848087B1 (ko) * 2001-12-11 2008-07-24 삼성전자주식회사 기판 위에 패턴을 형성하는 방법 및 이를 이용한 액정표시 장치용 기판의 제조 방법
WO2003052502A1 (en) * 2001-12-14 2003-06-26 Samsung Electronics Co., Ltd. A manufacturing method of liquid crystal display
US7142279B2 (en) * 2001-12-14 2006-11-28 Samsung Electronics Co., Ltd. Divisionally exposing an active area in LCD with a plurality of shots
KR100840322B1 (ko) * 2002-02-19 2008-06-20 삼성전자주식회사 액정 표시 장치의 패널 제조 방법
KR100491821B1 (ko) * 2002-05-23 2005-05-27 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판과 그 제조방법
JP4328515B2 (ja) * 2002-11-19 2009-09-09 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置及びその製造方法
KR100929672B1 (ko) * 2003-03-13 2009-12-03 삼성전자주식회사 액정 표시 장치용 표시판의 제조 방법
KR100968566B1 (ko) * 2003-07-24 2010-07-08 삼성전자주식회사 액정 표시 장치 및 이에 포함된 표시판의 제조 방법
KR100692683B1 (ko) * 2003-08-25 2007-03-14 비오이 하이디스 테크놀로지 주식회사 액정표시장치의 화소전극 형성방법
TWI225961B (en) * 2003-11-17 2005-01-01 Au Optronics Corp Method of fabricating a liquid crystal display
KR100925984B1 (ko) * 2004-10-26 2009-11-10 엘지디스플레이 주식회사 액정표시장치 제조방법
US7898641B2 (en) * 2004-12-02 2011-03-01 Sharp Kabushiki Kaisha Production process of a display device, and a display device
CN104503128B (zh) * 2014-12-19 2018-01-09 深圳市华星光电技术有限公司 用于显示器的彩膜基板的制造方法
KR20210147640A (ko) 2020-05-29 2021-12-07 동우 화인켐 주식회사 노광 패턴, 이의 형성에 사용되는 노광 마스크, 및 이를 이용한 노광 패턴 형성 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH061313B2 (ja) * 1985-02-06 1994-01-05 シャープ株式会社 液晶表示装置
US5486896A (en) * 1993-02-19 1996-01-23 Nikon Corporation Exposure apparatus
JPH06324473A (ja) * 1993-05-10 1994-11-25 Nikon Corp フオトマスク及び露光方法
EP0940710A3 (en) * 1993-12-07 1999-12-22 Kabushiki Kaisha Toshiba Display device and fabrication method thereof
JPH09236930A (ja) * 1995-12-26 1997-09-09 Fujitsu Ltd パターン形成方法、一組の露光マスク、薄膜トランジスタマトリクス装置及びその製造方法、液晶表示装置及びその製造方法
US5795686A (en) * 1995-12-26 1998-08-18 Fujitsu Limited Pattern forming method and method of manufacturing liquid crystal display device
JP3825515B2 (ja) * 1996-01-17 2006-09-27 株式会社東芝 液晶表示装置の製造方法
JPH11119410A (ja) * 1997-10-14 1999-04-30 Fujitsu Ltd パターン設計方法及びパターン設計装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7279257B2 (en) 2003-01-27 2007-10-09 Sharp Kabushiki Kaisha Pattern forming method, method of manufacturing thin film transistor substrate, method of manufacturing liquid crystal display and exposure mask
US7267912B2 (en) 2003-03-19 2007-09-11 Sharp Kabushiki Kaisha Exposure mask and pattern exposure method
JP2006148123A (ja) * 2004-11-22 2006-06-08 Asml Netherlands Bv リソグラフィ装置及びデバイス製造方法
JP2009260362A (ja) * 2004-11-22 2009-11-05 Asml Netherlands Bv リソグラフィ装置及びデバイス製造方法

Also Published As

Publication number Publication date
TW439001B (en) 2001-06-07
KR100502794B1 (ko) 2005-10-14
US5945256A (en) 1999-08-31
KR19990047901A (ko) 1999-07-05

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