TW429597B - Ferroelectric memory device and method for fabricating the same - Google Patents

Ferroelectric memory device and method for fabricating the same

Info

Publication number
TW429597B
TW429597B TW088111148A TW88111148A TW429597B TW 429597 B TW429597 B TW 429597B TW 088111148 A TW088111148 A TW 088111148A TW 88111148 A TW88111148 A TW 88111148A TW 429597 B TW429597 B TW 429597B
Authority
TW
Taiwan
Prior art keywords
film
dielectric film
forming
fabricating
memory device
Prior art date
Application number
TW088111148A
Other languages
English (en)
Inventor
Yong-Sik Yu
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Application granted granted Critical
Publication of TW429597B publication Critical patent/TW429597B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
TW088111148A 1998-07-02 1999-07-01 Ferroelectric memory device and method for fabricating the same TW429597B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-1998-0026553A KR100399886B1 (ko) 1998-07-02 1998-07-02 반도체 메모리 소자의 커패시터 형성 방법

Publications (1)

Publication Number Publication Date
TW429597B true TW429597B (en) 2001-04-11

Family

ID=19542805

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088111148A TW429597B (en) 1998-07-02 1999-07-01 Ferroelectric memory device and method for fabricating the same

Country Status (4)

Country Link
US (1) US6235542B1 (zh)
JP (1) JP2000068469A (zh)
KR (1) KR100399886B1 (zh)
TW (1) TW429597B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100343287B1 (ko) * 1999-09-21 2002-07-15 윤종용 고집적 강유전체 메모리 소자의 형성 방법
US6525357B1 (en) * 1999-10-20 2003-02-25 Agilent Technologies, Inc. Barrier layers ferroelectric memory devices
JP4357076B2 (ja) * 2000-03-27 2009-11-04 株式会社東芝 強誘電体メモリ及びその製造方法
KR100372644B1 (ko) * 2000-06-30 2003-02-17 주식회사 하이닉스반도체 비 휘발성 반도체 메모리 소자의 캐패시터 제조방법
US6743643B2 (en) * 2001-11-29 2004-06-01 Symetrix Corporation Stacked memory cell having diffusion barriers
US6531325B1 (en) * 2002-06-04 2003-03-11 Sharp Laboratories Of America, Inc. Memory transistor and method of fabricating same
JP4380625B2 (ja) * 2005-11-24 2009-12-09 トヨタ自動車株式会社 内燃機関の空燃比制御装置
CN109844913B (zh) * 2016-10-24 2022-02-25 三菱电机株式会社 化合物半导体器件

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0516031A1 (en) * 1991-05-29 1992-12-02 Ramtron International Corporation Stacked ferroelectric memory cell and method
US5382787A (en) 1991-07-09 1995-01-17 Kanegafuchi Chemical Industry Co., Ltd. Photoconductive material
US5508226A (en) * 1991-12-13 1996-04-16 Symetrix Corporation Low temperature process for fabricating layered superlattice materialsand making electronic devices including same
US5516363A (en) 1991-12-13 1996-05-14 Symetrix Corporation Specially doped precursor solutions for use in methods of producing doped ABO3 -type average perovskite thin-film capacitors
JPH06151872A (ja) 1992-11-09 1994-05-31 Mitsubishi Kasei Corp Ｆｅｔ素子
US5330931A (en) * 1993-09-22 1994-07-19 Northern Telecom Limited Method of making a capacitor for an integrated circuit
US5527766A (en) 1993-12-13 1996-06-18 Superconductor Technologies, Inc. Method for epitaxial lift-off for oxide films utilizing superconductor release layers
US5622893A (en) * 1994-08-01 1997-04-22 Texas Instruments Incorporated Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
US5541807A (en) * 1995-03-17 1996-07-30 Evans, Jr.; Joseph T. Ferroelectric based capacitor for use in memory systems and method for fabricating the same
JP2871516B2 (ja) 1995-03-22 1999-03-17 株式会社移動体通信先端技術研究所 酸化物超伝導薄膜装置
JPH09246510A (ja) 1996-03-07 1997-09-19 Nikon Corp 赤外線固体撮像装置
US5751061A (en) * 1995-12-18 1998-05-12 Motorola, Inc. Semiconductor diode device with non-planar heatsink and method of manufacture
JP3022328B2 (ja) * 1996-06-19 2000-03-21 日本電気株式会社 薄膜形成方法
US5824590A (en) * 1996-07-23 1998-10-20 Micron Technology, Inc. Method for oxidation and crystallization of ferroelectric material
JPH10294433A (ja) 1997-04-22 1998-11-04 Sharp Corp 強誘電体メモリ素子の製造方法

Also Published As

Publication number Publication date
US6235542B1 (en) 2001-05-22
KR100399886B1 (ko) 2004-02-11
JP2000068469A (ja) 2000-03-03
KR20000007293A (ko) 2000-02-07

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees