TW357438B - Semiconductor manufacturing process with integrated self-aligned silicide and self-aligned contract window - Google Patents

Abstract

A semiconductor manufacturing process with integrated self-aligned silicide and self-aligned contract window, including the following steps: (a) on a substrate, separation with a shallow trench or field oxide layer a first active area and a second active area, being the first active area for forming logic circuits and the second active area for forming memory circuits; (b) forming accordingly on the substrate a gate oxide layer and a polycrystalline silicon layer; (c) forming on the second active area a silicide and a mask layer; (d) on the second active area, defining said layers for forming a polycide gate coated with a mask layer; (e) on the first active area, defining the gate oxide layer and the polycrystalline silicon layer, for forming a polycrystalline silicon gate electrode; (f) forming on the side of the gate structures a lateral wall layer; (g) forming source/drain electrode on the substrate of both sides of the gate electrode structure; (h) forming a blocking layer, coating the structure of the second active area; (i) by using a self-aligned silicide, forming silicide substance on the polycrystaline silicon gate electrode, source/drain electrode in the first active area; (j) forming the first insulator, coating the substrate; and (k) etching the insulation layer by using the blocking layer and the lateral wall layer as blocking layers and for forming on the second active area a self-aligned contact window, for exposing either the source or the drain area for contact area.