TW428324B - Low-noise active-pixel sensor for imaging arrays with high speed row reset - Google Patents
Low-noise active-pixel sensor for imaging arrays with high speed row resetInfo
- Publication number
- TW428324B TW428324B TW088116918A TW88116918A TW428324B TW 428324 B TW428324 B TW 428324B TW 088116918 A TW088116918 A TW 088116918A TW 88116918 A TW88116918 A TW 88116918A TW 428324 B TW428324 B TW 428324B
- Authority
- TW
- Taiwan
- Prior art keywords
- mos transistor
- pixel sensor
- low
- high speed
- imaging arrays
- Prior art date
Links
- 238000003491 array Methods 0.000 title 1
- 238000003384 imaging method Methods 0.000 title 1
- 230000002596 correlated effect Effects 0.000 abstract 1
- 238000005070 sampling Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
- H03F3/087—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with IC amplifier blocks
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/164,923 US6587142B1 (en) | 1998-09-09 | 1998-10-01 | Low-noise active-pixel sensor for imaging arrays with high speed row reset |
Publications (1)
Publication Number | Publication Date |
---|---|
TW428324B true TW428324B (en) | 2001-04-01 |
Family
ID=22596671
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW088116918A TW428324B (en) | 1998-10-01 | 1999-10-01 | Low-noise active-pixel sensor for imaging arrays with high speed row reset |
Country Status (3)
Country | Link |
---|---|
US (1) | US6587142B1 (zh) |
TW (1) | TW428324B (zh) |
WO (1) | WO2000019706A1 (zh) |
Cited By (1)
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---|---|---|---|---|
WO2014083730A1 (ja) * | 2012-11-27 | 2014-06-05 | パナソニック株式会社 | 固体撮像装置およびその駆動方法 |
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US6972125B2 (en) | 1999-02-12 | 2005-12-06 | Genetics Institute, Llc | Humanized immunoglobulin reactive with B7-2 and methods of treatment therewith |
BR0008209A (pt) | 1999-02-12 | 2002-02-19 | Genetics Inst | Imunoglobulina humanizada reativa com moléculas b7 e processos de tratamento com as mesmas |
AU1190501A (en) * | 1999-09-30 | 2001-04-30 | California Institute Of Technology | High-speed on-chip windowed centroiding using photodiode-based cmos imager |
JP4164590B2 (ja) * | 1999-11-12 | 2008-10-15 | 本田技研工業株式会社 | 光センサ回路 |
US7068312B2 (en) * | 2000-02-10 | 2006-06-27 | Minolta Co., Ltd. | Solid-state image-sensing device |
WO2002027763A2 (en) * | 2000-09-25 | 2002-04-04 | Foveon, Inc. | Active pixel sensor with noise cancellation |
WO2003024091A1 (en) * | 2000-11-16 | 2003-03-20 | California Institute Of Technology | Photodiode cmos imager with column-feedback soft-reset |
US6459078B1 (en) * | 2000-12-04 | 2002-10-01 | Pixel Devices International, Inc. | Image sensor utilizing a low FPN high gain capacitive transimpedance amplifier |
US6657487B2 (en) * | 2001-02-05 | 2003-12-02 | Em(Us) Design, Inc | Photodetector preamplifier circuit having a rotating input stage |
US6718069B2 (en) * | 2001-02-22 | 2004-04-06 | Varian Medical Systems, Inc. | Method and system for reducing correlated noise in image data |
DE10123853A1 (de) * | 2001-05-16 | 2002-11-28 | Bosch Gmbh Robert | Schaltungsanordnung, Bildsensorvorrichtung und Verfahren |
US6952240B2 (en) * | 2001-05-18 | 2005-10-04 | Exar Corporation | Image sampling circuit with a blank reference combined with the video input |
US6850651B2 (en) * | 2001-07-02 | 2005-02-01 | Corel Corporation | Moiré correction in images |
DE10135167B4 (de) * | 2001-07-19 | 2006-01-12 | Robert Bosch Gmbh | Schaltungsanordnung, Bildsensorvorrichtung und Verfahren |
EP1333661B1 (en) * | 2002-02-01 | 2011-05-11 | STMicroelectronics Limited | Improved image sensor |
US7289149B1 (en) * | 2002-03-29 | 2007-10-30 | Sensata Technologies, Inc. | Operational transconductance amplifier for high-speed, low-power imaging applications |
DE10216806B4 (de) * | 2002-04-16 | 2006-11-23 | Institut Für Mikroelektronik Stuttgart | Verfahren und Vorrichtung zur FPN-Korrektur von Bildsignalwerten eines Bildsensors |
KR20030096659A (ko) | 2002-06-17 | 2003-12-31 | 삼성전자주식회사 | 이미지 센서의 화소 어레이 영역, 그 구조체 및 그 제조방법 |
US7623169B2 (en) * | 2002-06-26 | 2009-11-24 | Xerox Corporation | Low noise charge gain hybrid imager |
US6903670B1 (en) | 2002-10-04 | 2005-06-07 | Smal Camera Technologies | Circuit and method for cancellation of column pattern noise in CMOS imagers |
CN1708976A (zh) * | 2002-10-29 | 2005-12-14 | 光子焦点股份公司 | 光电传感器 |
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ATE477673T1 (de) * | 2003-12-11 | 2010-08-15 | Advasense Technologics 2004 Lt | Verfahren und vorrichtung zur kompensation von kamerazittern |
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FR2866180B1 (fr) * | 2004-02-06 | 2006-06-23 | St Microelectronics Sa | Procede de traitement des informations delivrees par une matrice de pixels actifs d'un capteur offrant une dynamique et un gain etendus, et capteur correspondant. |
FR2870423B1 (fr) * | 2004-05-12 | 2006-07-07 | St Microelectronics Sa | Dispositif et procede de correction du bruit de reinitialisation et/ou du bruit fixe d'un pixel actif pour capteur d'image |
JP4229884B2 (ja) * | 2004-07-29 | 2009-02-25 | シャープ株式会社 | 増幅型固体撮像装置 |
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KR100705005B1 (ko) * | 2005-06-20 | 2007-04-09 | 삼성전기주식회사 | 씨모스 이미지 센서의 이미지 화소 |
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JP4804254B2 (ja) * | 2006-07-26 | 2011-11-02 | キヤノン株式会社 | 光電変換装置及び撮像装置 |
US7875840B2 (en) * | 2006-11-16 | 2011-01-25 | Aptina Imaging Corporation | Imager device with anti-fuse pixels and recessed color filter array |
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FR2910710B1 (fr) * | 2006-12-21 | 2009-03-13 | St Microelectronics Sa | Capteur d'image cmos a photodiode piegee a faible tension d'alimentation |
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US9609243B2 (en) * | 2007-05-25 | 2017-03-28 | Uti Limited Partnership | Systems and methods for providing low-noise readout of an optical sensor |
US8199236B2 (en) | 2007-09-11 | 2012-06-12 | Simon Fraser University/Industry Liason Office | Device and pixel architecture for high resolution digital |
US7755689B2 (en) * | 2007-10-05 | 2010-07-13 | Teledyne Licensing, Llc | Imaging system with low noise pixel array column buffer |
US7884865B2 (en) * | 2007-12-10 | 2011-02-08 | Intel Corporation | High speed noise detection and reduction in active pixel sensor arrays |
US20100271517A1 (en) * | 2009-04-24 | 2010-10-28 | Yannick De Wit | In-pixel correlated double sampling pixel |
US9191598B2 (en) | 2011-08-09 | 2015-11-17 | Altasens, Inc. | Front-end pixel fixed pattern noise correction in imaging arrays having wide dynamic range |
KR20130049076A (ko) * | 2011-11-03 | 2013-05-13 | 삼성디스플레이 주식회사 | 광검출 화소, 광검출 장치, 및 그 구동방법 |
CN103324323A (zh) * | 2012-03-20 | 2013-09-25 | 君曜科技股份有限公司 | 降低噪声装置与方法 |
CN109218638B (zh) * | 2017-06-30 | 2021-04-02 | 京东方科技集团股份有限公司 | 像素读出电路及驱动方法、x射线探测器 |
KR20220169822A (ko) | 2021-06-21 | 2022-12-28 | 삼성전자주식회사 | 픽셀, 및 이를 포함하는 이미지 센서 |
DE102021128022B3 (de) * | 2021-10-27 | 2023-02-02 | Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg | Bildsensor |
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-
1998
- 1998-10-01 US US09/164,923 patent/US6587142B1/en not_active Expired - Lifetime
-
1999
- 1999-09-30 WO PCT/US1999/022562 patent/WO2000019706A1/en active Application Filing
- 1999-10-01 TW TW088116918A patent/TW428324B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014083730A1 (ja) * | 2012-11-27 | 2014-06-05 | パナソニック株式会社 | 固体撮像装置およびその駆動方法 |
Also Published As
Publication number | Publication date |
---|---|
US6587142B1 (en) | 2003-07-01 |
WO2000019706A1 (en) | 2000-04-06 |
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