TW428226B - Method for defining polysilicon pattern - Google Patents
Method for defining polysilicon patternInfo
- Publication number
- TW428226B TW428226B TW87101561A TW87101561A TW428226B TW 428226 B TW428226 B TW 428226B TW 87101561 A TW87101561 A TW 87101561A TW 87101561 A TW87101561 A TW 87101561A TW 428226 B TW428226 B TW 428226B
- Authority
- TW
- Taiwan
- Prior art keywords
- oxide layer
- cap oxide
- layer
- thickness
- polysilicon
- Prior art date
Links
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW87101561A TW428226B (en) | 1998-02-06 | 1998-02-06 | Method for defining polysilicon pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW87101561A TW428226B (en) | 1998-02-06 | 1998-02-06 | Method for defining polysilicon pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
TW428226B true TW428226B (en) | 2001-04-01 |
Family
ID=21629446
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW87101561A TW428226B (en) | 1998-02-06 | 1998-02-06 | Method for defining polysilicon pattern |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW428226B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100392822C (zh) * | 2005-06-21 | 2008-06-04 | 联华电子股份有限公司 | 限定多晶硅图案的方法 |
-
1998
- 1998-02-06 TW TW87101561A patent/TW428226B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100392822C (zh) * | 2005-06-21 | 2008-06-04 | 联华电子股份有限公司 | 限定多晶硅图案的方法 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |