TW430889B - Method for making semiconductor device with small-sized gate structure - Google Patents

Method for making semiconductor device with small-sized gate structure

Info

Publication number
TW430889B
TW430889B TW88116563A TW88116563A TW430889B TW 430889 B TW430889 B TW 430889B TW 88116563 A TW88116563 A TW 88116563A TW 88116563 A TW88116563 A TW 88116563A TW 430889 B TW430889 B TW 430889B
Authority
TW
Taiwan
Prior art keywords
layer
photoresist
dielectric constant
organic material
low dielectric
Prior art date
Application number
TW88116563A
Other languages
Chinese (zh)
Inventor
Ruei-Jen Huang
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW88116563A priority Critical patent/TW430889B/en
Application granted granted Critical
Publication of TW430889B publication Critical patent/TW430889B/en

Links

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  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

There is disclosed a method for making a small-sized gate structure. The present invention comprises a photoresist reduction process, and an organic material having a low dielectric constant between a polysilicon layer and an antireflective layer. The method comprises providing a semiconductor device having a silicon substrate; sequentially forming a gate oxide and a polysilicon layer on the surface of the silicon substrate; depositing an organic material layer with a low dielectric constant on the polysilicon layer, and forming an antireflective layer on the organic material layer with a low dielectric constant; forming a photoresist layer on the antireflective layer, the photoresist layer being used to define the location of the gate; using the photoresist layer as a mask to etch the antireflective layer and performing a photoresist reduction process during which the organic material layer with a low dielectric constant will be partially etched; using the photoresist layer as a mask to etching the organic material layer with a low dielectric constant during which the photoresist layer will also be partially removed; using the photoresist layer as a mask to etch the polysilicon layer until exposing the upper surface of the gate oxide layer during which the photoresist layer and the antireflective layer will also be removed; and removing the organic material layer with a low dielectric constant on the polysilicon layer to complete the production of the gate structure.
TW88116563A 1999-09-28 1999-09-28 Method for making semiconductor device with small-sized gate structure TW430889B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW88116563A TW430889B (en) 1999-09-28 1999-09-28 Method for making semiconductor device with small-sized gate structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW88116563A TW430889B (en) 1999-09-28 1999-09-28 Method for making semiconductor device with small-sized gate structure

Publications (1)

Publication Number Publication Date
TW430889B true TW430889B (en) 2001-04-21

Family

ID=21642412

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88116563A TW430889B (en) 1999-09-28 1999-09-28 Method for making semiconductor device with small-sized gate structure

Country Status (1)

Country Link
TW (1) TW430889B (en)

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