TW430889B - Method for making semiconductor device with small-sized gate structure - Google Patents
Method for making semiconductor device with small-sized gate structureInfo
- Publication number
- TW430889B TW430889B TW88116563A TW88116563A TW430889B TW 430889 B TW430889 B TW 430889B TW 88116563 A TW88116563 A TW 88116563A TW 88116563 A TW88116563 A TW 88116563A TW 430889 B TW430889 B TW 430889B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- photoresist
- dielectric constant
- organic material
- low dielectric
- Prior art date
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
There is disclosed a method for making a small-sized gate structure. The present invention comprises a photoresist reduction process, and an organic material having a low dielectric constant between a polysilicon layer and an antireflective layer. The method comprises providing a semiconductor device having a silicon substrate; sequentially forming a gate oxide and a polysilicon layer on the surface of the silicon substrate; depositing an organic material layer with a low dielectric constant on the polysilicon layer, and forming an antireflective layer on the organic material layer with a low dielectric constant; forming a photoresist layer on the antireflective layer, the photoresist layer being used to define the location of the gate; using the photoresist layer as a mask to etch the antireflective layer and performing a photoresist reduction process during which the organic material layer with a low dielectric constant will be partially etched; using the photoresist layer as a mask to etching the organic material layer with a low dielectric constant during which the photoresist layer will also be partially removed; using the photoresist layer as a mask to etch the polysilicon layer until exposing the upper surface of the gate oxide layer during which the photoresist layer and the antireflective layer will also be removed; and removing the organic material layer with a low dielectric constant on the polysilicon layer to complete the production of the gate structure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88116563A TW430889B (en) | 1999-09-28 | 1999-09-28 | Method for making semiconductor device with small-sized gate structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88116563A TW430889B (en) | 1999-09-28 | 1999-09-28 | Method for making semiconductor device with small-sized gate structure |
Publications (1)
Publication Number | Publication Date |
---|---|
TW430889B true TW430889B (en) | 2001-04-21 |
Family
ID=21642412
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW88116563A TW430889B (en) | 1999-09-28 | 1999-09-28 | Method for making semiconductor device with small-sized gate structure |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW430889B (en) |
-
1999
- 1999-09-28 TW TW88116563A patent/TW430889B/en not_active IP Right Cessation
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MK4A | Expiration of patent term of an invention patent |