TW405129B - Thin-film component - Google Patents
Thin-film component Download PDFInfo
- Publication number
- TW405129B TW405129B TW087111101A TW87111101A TW405129B TW 405129 B TW405129 B TW 405129B TW 087111101 A TW087111101 A TW 087111101A TW 87111101 A TW87111101 A TW 87111101A TW 405129 B TW405129 B TW 405129B
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- thin
- patent application
- film element
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- 239000010409 thin film Substances 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000011521 glass Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000004642 Polyimide Substances 0.000 claims abstract description 10
- 229920001721 polyimide Polymers 0.000 claims abstract description 10
- 229920003002 synthetic resin Polymers 0.000 claims description 6
- 239000000057 synthetic resin Substances 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 5
- 230000002079 cooperative effect Effects 0.000 claims 1
- 239000003990 capacitor Substances 0.000 abstract description 16
- 238000005452 bending Methods 0.000 abstract description 9
- 150000003071 polychlorinated biphenyls Chemical class 0.000 abstract description 4
- 230000002829 reductive effect Effects 0.000 abstract description 4
- 239000012777 electrically insulating material Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 55
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 5
- 229920000620 organic polymer Polymers 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000218691 Cupressaceae Species 0.000 description 1
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- 241000282806 Rhinoceros Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/006—Thin film resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/29—Terminals; Tapping arrangements for signal inductances
- H01F27/292—Surface mounted devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3442—Leadless components having edge contacts, e.g. leadless chip capacitors, chip carriers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Non-Adjustable Resistors (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Details Of Resistors (AREA)
Description
五、發明説明(1 本發明係關於包含一t絕緣材料基材的薄膜元件, 備兩個U型側接觸及一個電連接至兩個側接觸的 W配 ,r cf· %、”0·構。 此種電結構之實例包括電阻膜、電容器結構與線圈妗 其結合物。 〜構及 開頭段落中提到的薄膜元件類型本身係已知 ,列如, 在吴國專利第4,453,199號中,其提出此種薄膜電容器之描 述》此電容器更特別地包含一玻璃基材,電容器結構係利 用络氣沉積與濺鍍提供於玻璃基材上。此電容器結構係由 鋁或錄之電極層及二氧化矽介電層组成。該電容器結構係 更進一步配備一合成樹脂之鈍化或絕緣覆蓋層,例如聚醯 亞胺。電容器係_構成電容器結構位於基材與覆蓋層之 間。該已知的元件亦包含兩個側接觸。這些側接觸係由利 用濺鍍所提供的鉻、鎳及銀之三層結構组成。 事實上,頃發現已知的薄膜元件類型具有一重要的缺 點,那就是不可接受的高百分比之此種元件未能達成標準 彎曲測試。在這些測試中,元件之電功能係在焊接元件的 印刷電路板(PCB)彎曲一特定角度時受到監控。此種彎曲 測試提供應用此種元件於可撓曲pCBs及受到震動的…^的 可能性及信賴性之指標。 本發明之'目的係排除上述缺點。本發明更特別地係釺 對於提供一種薄膜元件,其忍受標準彎曲測試的能力係較 佳於已知元件之能力。 \ 本發明之這些與其它目的係利用開頭段落提及的薄膜元 件達成,根據本發明,其特徵爲可撓曲層位於基材與至少 -4 A7 il51_29 五、發明説明(2 每個U型侧接觸之兩個支 接提佯於… 调支柱工-之間,其中可撓曲層係直 ,供$基材上,以及層材料之彈性模數小於則〜。 請 先 閱 讀 背 面 之 注 意 事 項 再 填 寫暫 本, 頁 ΡΓΚ Γ月亦基於實驗得到的事實,即在焊接已知的元件於 〈後,機械應力集中可能發生於焊接至基材的側接 柱與基材本身之間。利用目視檢查許多未能通過彎 2試的元件,頃確定這些應力集中造成基材破裂。這經 生不需要的元件電功能變化。未能通過標準-曲測試 的二件I百分比可藉由在欲焊接U型側接觸的支柱之間提 :可撓曲層而實質地降低。頃S現可撓曲層可隨著該應力 集中而懸突。 訂 頃汪意欲形成的可撓曲層係指-層彈性模數小於50 G?a 的材料材料之彈性模數係單位材料面積中必須在該材料 中帶來某些變形度的力量D實際上,彈性模數超過50 GPa =材料證明不足以撓曲而吸收該應力集中至足夠的程度。 最佳的結果可利用彈性模數小於10 GPa的材料之可撓曲犀 達到。 g 理論上,所有種類之電絕緣材料基材可根據本發明而用 於疋件’例如無機材料基材如氧化鋁燒結基材。本發明亦 可成功地應用於具有矽基材的薄膜元件。但最有利地,玻 璃基材係應用於薄膜元件。然而,頃發現焊接側接觸四周 I應力集中所造成的破裂問題在具有玻璃基材的元件中係 最顯著的。頃注意玻璃之彈性模數係大約100 GPa。 根據本發明的薄膜元件之有利的具體實施例之特徵係可 挽曲層提供於面對但遠離電結構的基材表面上,以及該層 5-21 OX 297公漦) Μ B7 05129 五 、發明説明(3 實質地完全覆蓋此表面。此具體實施例對由破璃晶圓製造 的薄膜$件提供大大的保護技術優點。在電結構係提供於 基材之一主要表面及可撓曲層係提供於其它主要表面的具 ~ 體實施例中,可撓曲層可在單一操作而無微影步驟與蝕刻 | 步驟中塗佈而成,以致於實質地完全覆蓋晶圓之該主要表 | 面。本發明之此觀點將在實例中更詳細地解釋。 | · 頃注意根據最後提對的具體實施例的元件可藉由電結構 | 、
面對但遠離該PCB的方式而只焊接在Pcb。本發明可選擇用 J 於焊接處理後電結構面對PCB的元件。此例子中,可挽曲 層與電結構必須提供於相同的主要基材表面,以及可撓曲 一丨丨 層較佳地只存在於U型側接觸之支柱位置上。當提供可撓 | 曲層時,這需要額外的微影步驟與蝕刻步驟。最後,頃注 j 意本發明也可應用於上面所提到的結構中應可焊接至PCB y 上的薄膜元件。在此例子中,可撓曲層必須存在於基材之 | 主要面。 j 另一個令人感興趣的薄膜元件具體實施例之特徵係可撓 丨丨 曲層主要由合成樹脂所組成。頃發現特別是許多有機合成 . 樹脂具有需求的彈性模數,尤其是有機聚合物。可非常適 .丨丨 用於此目的的聚合物係聚醯亞胺。除了需求的可撓西性之 丨 外’此種聚合物之黏著至玻璃基材係最佳的。 •丨 頃發現可撓曲層厚度較佳地係以5與50微米爲範圍。在具 | 有低於5微米厚度的層之例子中,本發明之效果(增進抗彎 | 曲測試性)幾乎觀察不到。若層厚於5〇微米,則發生晶圓製 丨丨 成個別7L件的問題。在這兩個不利的影響之間的最佳折衷 丨 A7五、發明説明(4 ) 可在使用具有10與40微米間之厚唐 序尻範圍的可撓曲層時達 成0 I 本發明之這些與其它觀點將在參考下文描 例後闡明及變得顯而易見。 丹箱X施在圖式中: 圖 圖 圖1係本發明的薄膜元件之第—具體實施例之概要截面 t 圖2係本發明的薄膜元件之第― 乐—具體實施例之概要截面 圖 圖3係本發明的薄膜元件之第三具體實施例之概要截 面 頃/主意,爲了簡潔’圖式係未按比例的。 圖1顯示薄膜電阻器形式的本發明薄膜元件之第一實例。 此電阻器包含具有1_6毫米x0_8毫米及〇42毫米厚之尺寸的 玻璃(史卡特(Schott) AF45)基材(1) ^在基材之兩個主要面 之一的兩端,提供一有機合成樹脂(彈性模數低於5〇 GPa) 之可撓曲層(2),此例子爲聚醯亞胺。可撓曲層之厚度爲2〇 微米。此外,提供兩個U型側接觸(3 ) ^這些側接觸係由蒸 氣沉積的鎳層所组成。該侧接觸係以基材兩端的可撓曲層 正好位於基材表面與每個側接觸支柱(6)之一之間的方式提 供。 基材亦配備一薄膜電阻通道Η )形式的電結構。此通道係 由具有大約20毫微米厚度的濺鍍鎳鉻(NiCr)材料所組成。 電阻通道之兩端係電連接至側接觸。較佳地,電阻通道係 -7 本紙择尺度询州中((,NS)A4規柏( 210X 297公釐) . . '裝 訂------乂‘ (請先閏讀背面之注意事項再填寫本頁) 405129
五、發明説明(5 利用覆蓋層(5)隔離,其較佳地係主要由有機聚合物组成。 良好結果係利用聚醯亞胺保護層達到。 描述於圖1的薄膜元件應以不直接接觸可撓曲層的側接觸 柱(6 )係焊接至pcb的方式鞏固於ρ〔Β上。在鞏固元件至 PCB之後’基材(1)作爲電阻通道之保護層。 圖2顯示本發明薄膜元件之薄膜電容器形式之另一實例。 此電容器亦包含具有L6毫米χ〇 8毫米及〇 42毫米厚之尺寸 的玻璃(史卡特AF45)基材(11)。面對但遠離電結構的基材 王要面係配備一緊接的有機合成樹脂(彈性模數低於5〇(31>&) 可撓曲層(12),此例子爲聚醯亞胺。可撓曲層之厚度爲大 約15微米。此外,提供兩個υ型側接觸(13)。其由具有大 約3 50毫微米厚度的濺鍍銅層組成。該接觸係以可撓曲層正 好位於基材表面與每個側接觸之支柱(18)之一之間的方式 提供。又在此實例中,可撓曲層係直接提供於基材上,即 無中間層。 基材之其它主要面係配備一薄膜電容器形式電結構。此 電容器係包含具有大約2微米厚的鋁之蒸氣沉積的第—與 第二電極層(14 ’ 15),一層具有大约2微米厚度的濺鍍氮化 梦介電層1 6係夾在電極層之間。每個電極之末端之一係連 接至側接觸(13)之一。較佳地,電容器結構係利用較佳地 主要由有機聚合物形成的覆蓋層(17)隔離。良好的結果係 利用聚醯亞胺達成。 描述於圖2的薄膜元件應鞏固於PCB,其利用直接接觸可 撓曲層的側接觸之支柱(18)係焊接於PCB上的方式。在鞏 :_______ -8- 本纸珞尺度进州中阁囚家榡呤((’NS ) Λ4%格(2丨0X297公釐) m I . - In I 1- I I I. . i - - - 士^·I <^ϋ I I I— ' *___- 1 · . --0 I - in - I t—-- - - — 1 I--- -1 I——u I . I__ me ' - I I tm I - I. (請先閱讀背面之注意事項再填寫本頁) 405129 at 五、發明説明戶) "~~ -- 固此元件於PCB之後,電結構係位於面對但遠離pCB的基材 (11)表面上,在此結構中,元件係由覆蓋層(17)保護。 圖3顚示本發明之薄膜電阻器形式的薄膜元件之又另一個 實例。此電阻器包含具有12毫米χ〇6毫米及〇42毫米厚之 玻璃(史卡特AF45)基材(21) ^基材之一主要面之兩端及整 個其它主要面係配備一有機合成樹脂(彈性模數低K5〇GPa) 之(部伤)可撓曲層(22),此例子爲聚酿亞胺。可撓曲層之 厚度係大約35微米。此外,提供兩個u型侧接觸(23)。這 些側接觸係由一層濺鍍鎳層所組成。該侧接觸係以基材之 兩個主要面上的可撓曲層正好位於基材表面與每個側接觸 之兩個支柱(23)之間的方式提供。 基材亦配備一薄膜電阻通道(25)影式的電結構。此電阻 通道係由具有大約20毫微米厚度的濺鍍銅鎳(CuNi)材料所 形成。電阻通道之兩端係電連接至兩個側接觸。較佳地, 電阻通道係利用保護層(26)隔離,其較佳地係主要由有機 聚合物組成。良好結果係利用聚醯亞胺保護層達成。 描述於圖3的薄膜元件具有可鞏固Pcb於兩個方向的重要 優點°電結構可面對PCB或面對但遠離PCB。在任一例子 中’本發明之效果(即改良的抗彎曲性)係達成的。 下表列出標準彎曲測試數據。在此測試中,如關於圖2描 述的’ 一系列根據本發明的2〇個薄膜元件係與—系列沒有 可挽曲層(12)的2〇個薄膜元件比較。兩個系列之元件係根 據標準程序焊接至一 PCB。PCB之底侧係受到一壓縮力,同 時PCB係在末端部份固定。該壓縮力造成Pcb彎曲一角度。 4 ( CNS ) ( 210X297/>f ) 請 .先 閲 讀 背 ιδ 之 注 意 事 項 再 旁 裝 訂 --得5139 五、發明説明(7 A7 B7 列於表之頂行的X値表示關於兩個固定點之間的想像的連 接線上的壓力運用位置上PCB之歪斜。固定點之間的距離 係90毫米《每個X値指出顯現超過1〇0/〇之電容値變化的兩個 1 1.5 2 2.5 3 4 5 6 — 7 Li- - . • 4 2 I B - - - 4 2 2 1 2 5 u Μ)η -Τ. ί[· 合 fl 印 件高的抗標準彎曲測試性。 頃注意圖中的元件只包含一個電結構。然而,本發明 用於包含多於一個電結構的所謂積體薄膜元件時可同樣 良好。此種積體元件之實例包括Rc、111^與11(^。此種元 ^其Έ實例係包含多於一個同型電結構的元件,例如電 陣列或電容陣列。 根據本發明的薄膜元件可利用微影技術製造於基板, 如6吋玻璃晶圓。在清潔基板之後,首先,係塗佈一可 曲層。視元件類型而^,可提供連續可挽曲層(參考_ 可挽曲層須先受到結構化操作(參考I)。隨後,提供電 構層及若需要的化提供保護層。其次,基板轉變成長條 例如利用切斷或裂斷。在側接觸準備之後,長條轉變成1 別π件,例如利用切斷或裂斷。 側本發明的薄膜元件可配備—層位於、基材與每個旧 …一個支柱之間的薄可撓曲層。由於此層Μ 據本發明的元件展現出較佳的抗標準寶曲測試性。結果 10- -----^--Ί 装II {請先閲讀背面之注意事項再填寫本頁) 訂 • HI I I · 405129五、發明説明(s ) A7 B7 若這些元件應用於可撓曲PCBs或受到震動的PCBs時’產品失效百分,比降低。 -11 - 本纸乐尺度珅州中國(’NS ) Λ4規格(210 X 297公麓) (請先閱讀背面之注意事項再填寫本頁) 裝 -11
Claims (1)
- A8 B8 C8 D8 405129 第87丨1丨1〇丨號專利申請案 中文申請專利範園修正本(89年5月) 六、申請專利範圍 1. 種包3 % &緣材料基材之薄膜元件,其配備兩個以 型側接觸及一個電連接至兩個側接觸的電結構,其特點 為可撓曲層位於基材與至少每個u型側接觸之兩個支柱 之之間可校曲層係直接提供於基材表面上,以及層 材料之彈性模數係小於50 GPa。 2. 根據申印專利範圍第丨項之薄膜元件,其特徵為基材係 由玻璃製成。 3. 根據申請專利範圍第丨項之薄膜元件,其特徵為可撓曲 層係提供於面對但遠離電結構的基材表面上,以及層實 为地冗全覆蓋此表面。 4. 根據申請專利範圍第丨或3項之薄膜元件,其特徵為可 挽曲層主要包含一種有機合成樹脂。 5. 根據申請專利範圍第4項之薄膜元件,其特徵為有機合 成樹脂包含聚酿亞胺D 6. 根據申請專利範圍第丨或3項之薄膜元件,其特徵為可 撓曲層之厚度係以5與5〇微米之間為範圍。 - I H- ^1 ΙΊΙ I— n I n - - I 1 I 、ςτ (請先閲讀背面之注意事項再填寫本頁} 經濟部中央標準局WB:工消費合作社印製 -12· Μ氏法尺度適用中國國家揉準(CNS )从胁 〇><297公着)
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1998
- 1998-07-09 TW TW087111101A patent/TW405129B/zh not_active IP Right Cessation
- 1998-12-14 JP JP53352899A patent/JP2001513268A/ja active Pending
- 1998-12-14 EP EP98957080A patent/EP0966759A2/en not_active Withdrawn
- 1998-12-14 WO PCT/IB1998/002021 patent/WO1999033111A2/en not_active Application Discontinuation
- 1998-12-16 US US09/212,629 patent/US6201682B1/en not_active Expired - Fee Related
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US9024204B2 (en) | 2011-07-28 | 2015-05-05 | Cyntec Co., Ltd. | Aresistive device with flexible substrate and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
EP0966759A2 (en) | 1999-12-29 |
WO1999033111A2 (en) | 1999-07-01 |
JP2001513268A (ja) | 2001-08-28 |
WO1999033111A3 (en) | 1999-09-10 |
US6201682B1 (en) | 2001-03-13 |
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