TW396432B - Method for removing etching residues and contaminants - Google Patents

Method for removing etching residues and contaminants Download PDF

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Publication number
TW396432B
TW396432B TW087118930A TW87118930A TW396432B TW 396432 B TW396432 B TW 396432B TW 087118930 A TW087118930 A TW 087118930A TW 87118930 A TW87118930 A TW 87118930A TW 396432 B TW396432 B TW 396432B
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Taiwan
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per minute
substrate
cubic centimeters
standard cubic
oxygen
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TW087118930A
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Simon John Molloy
Daniel Joseph Vithkavage
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Lucent Technologies Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Description

A 7 B7 五、發明説明纟) 發明領域 本發明有關去除光阻蝕刻劑及蝕刻殘留物與污染物及 特別在積體電路裝置蝕刻通路孔中所產生者之氣體電漿處 理方法。 發明背景 半導體積體電路裝置典型包括多層使介電材料置於其 間之垂直堆疊金屬互連層。當微電子電路變得日益整合時 ，該電路之表面積隨著所垂直堆疊金屬互連層數目之增加 而減少。譬如，吾人預料具有一平方公分面積之晶片可能 具有數十至數百層密集之互連層，以有效使用在該 之所有元件。如此，有增加耦合互連層之改善方法 〇 用接觸孔及經由製成該介電層時即放置於其中之通路 孔達成各互連層間之電連接。接觸孔係一電連接該金屬層 至該半導體基材之線管，及通路孔係一電連接可爲鄰接層 或遠側層之二金屬互連層之線管。該接觸及通路孔典型係 由需要使用高溫及反應溶劑以除掉光阻蝕刻劑及去除其他 殘留物與自由離子污染物之蝕刻技術形成。然而，這些方 法有缺點。 例如，第1 A至1 G圖描述涉及用接線柱式接觸及通 路孔建造一積體電路裝置之示範處理步驟之圖解橫截面圖 。於第1A圖中，其顯示一半導體基材1〇，在基材 上面已放置大致顯示爲活化區12之多數電晶體或二 (請先閱讀背面之注意事項再^C本頁) 訂 -線— 〇 經濟部中央標準局員工消費合作社印製
本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -4- 經濟部中央標準局負工消費合作社印製 A7 B7 五、發明説明$ ) 。可包括二氧化矽或其他諸如一氧化鉬（a — T a 2〇5) 、一鈦氧化物（a - τ i Ο x )、或氧化x —(鋇，鋸）鈦 (x 一（ s r ) T i 〇3)介電材料之薄膜之第一介 電層1 4係該基材上方。一譬如由氮化矽構成之蝕 刻停止層1 6 在該介電層上方。接觸孔i 8 (第 1 C至1 D圖所示）形成在第1 a圖之裝置中，以接觸該 基材1 0之活化區1 2。 形成該接觸孔18之裝置之蝕刻操作通常係用一光阻 蝕刻劑罩膜及涉及使用一電漿RIE處理及諸如三氟甲烷 (CHF3)或六氟化硫（S f6)之反應氣體之乾式蝕刻 法施行。參考第1 B圖，一感光性罩膜可用於在該蝕刻停 '止層1 6之選定區域上方澱積一光阻触刻劑層2 〇。用反 應蝕刻劑可控制地蝕刻該蝕刻停止層16及介電層14之 » * % 暴露部份，以暴露該活化區1 2及提供接觸孔1 8 (第 1C圖）。然而參考第1C圖，需要去除該光阻蝕刻劑層 20 ’亦即提供第1D圖之結構。大致在高溫下使用一含 氧電漿施行該層2 0之剝除，例如在約攝氏2 5 0度下。 用於剝除該光阻鈾刻劑之高溫對該製程導致棘手之問 題’因高溫可造成在該接觸或通路孔底部之材料氧化（亦 即這些材料可包括砂、氮化鈦、或鋁）。該光阻蝕刻製程 可造成自由離子污染物（亦即鈉離子、氯離子、氟化物族 離子、或其他離子之有機化合物）變得嵌入晶圓表面（通 常由二氧化矽所構成,）。應移去這些污染物，因其可造-成 電氣裝置或晶體之缺陷、降低氧化物破壞強度、及使該裝 本紙張尺度適用中國國家標準（CNS ) A4規格（210X.297公釐） -5 - (請先閱讀背面之注意事項再^本頁) 訂 線· 經濟部中央標準局員工消費合作社印製 Λ7 __^_____B7 五、發明説明$ ) 置之整體性能及產量惡化。爲去除該污染物，通常施行一 等方向性氧化物蝕刻（例如使用一乾式電漿處理及四氟化 碳/氧氣或三氟化氮/氦氣之氣體混合物）。可使用其他 方法，諸如以一氫氟酸溶液淸洗。無論如何，與光阻蝕刻 劑剝除製程有關之高溫導致氧化或自由離子污染問題，而 不利地影響產品之產量及可靠性及需要使用額外之處理步 驟。 此外，··在剝除該光阻蝕刻劑2 0之後，可保留光阻蝕 刻劑殘留物（例如在該蝕刻停止層1 6之表面上），及在 該接觸或通路孔18處之基材表面及側壁可含有蝕刻劑殘 留物。這些殘留物通常包括含有鈦及鋁之薄膜（非揮發性 •蝕刻產品），該薄膜時常黏著至該接觸或通路孔之側壁。 如此，一旦剝除該光阻蝕刻劑，需要滌淸該結構》這典型 _ ♦ \ 係以諸如硫酸/過氧化氫之溶液或一般商業中習知爲 EKC — 265 (包括羥胺，2 — (2_氨基乙羥）乙醚 、苯鄰二酚（Cathechol)、及一鹼屬緩衝劑之溶液），及 ACT — CMI (二甲替乙醯胺及二乙醇胺之溶液）之溶 液。可隨後施行另一氧化物蝕刻或淸潔步驟以去除該自由 離子污染及氧化層。 當持續製造該積體電路裝置及形成每一族群之通路孔 時，可繼續這光阻蝕刻劑及蝕刻製程以提供另一通路孔， 並重複該淸洗製程。譬如，第1 E圖顯示第1 D圖之接觸 孔18充滿一金屬互連結構2 6，並對該活化區12提-供 —電連接。在該互連結構2 6上已放有一保護層2 8及一 (請先閱讀背面之注意事項再^喊本頁) -裝·
,1T 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐> -6- 經濟部中央標準局員工消費合作社印製 Λ7 _—_B? 五、發明説明·) 介電層3 0。一光阻蝕刻劑層3 1係顯示澱積在該介電層 3 0所選擇區域上方，及施行該電漿蝕刻製程以在暴露區 域提供通路孔3 2，如第1F圖所示。可隨後移去第if 圖之光阻蝕刻劑層3 1以提供第1 G圖之結構。如先前所 討論，在高溫剝除該光阻鈾刻劑3 1將造成自由離子污染 。施加一淸潔溶液以由蝕刻表面3 0及由通路3 2之側壁 或頂部表面去除蝕刻劑或光阻蝕刻劑殘留物。然後施加另 一氧化物餓·刻或淸潔步驟以處理自由離子污染。當塗佈額 外之層時可繼續這些製程，導致經由於製造期間所蝕刻之 很多通路孔提供多重互連區域，隨後施以很多淸洗步驟。 雖然上述蝕刻製程對產生具有多數互連部份之多層積 .體電路裝置是有利的，關於該光阻蝕刻劑剝除及殘留物去 除製程仍有缺點。於該光阻蝕刻劑剝除製程中使用高溫係 - · \ 不利的，因其可能造成自由離子嵌入該基材，而需要額外 之蝕刻或淸洗步驟。用於去除該殘留物之溶劑可能造成溶 劑累積及該電路裝置之腐蝕。當整合各電路裝置及減少該 裝置之表面積時，同樣減少該通路孔之直徑，而增加該溶 劑將變得誘捕於該通路孔及增加潛在腐蝕之可能性。每一 淸潔步驟增加處理時間，及特別當製造一多層結構時，每 一額外步驟可大幅增加全部之處理時間。反應溶劑之使用 亦造成處理問題及健康顧慮。 據此，在涉及積體電路之製造接線柱式通路孔中有需 要用於剝除光阻蝕刻劑層及去除殘留物及污染物之改良-方 法。本發明專注於這些需要。當考慮下面之敘述時可更充 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再本頁) -裝. -訂 Λ7 Λ7 經濟部中央標準局員工消费合作社印製 _______B7 五、發明説明$ ) 分顯現進一·步之優點。 發明槪論 申請人已發現在製造一積體電路裝置之通路孔及接觸 孔時’一氣體電漿製程可應用於去除一光阻蝕刻劑層及改 變每一蝕刻殘留物之成份二者，使得該殘留物可溶於水及 可用去離子水洗滌。該製程涉及將具有蝕刻通路孔或接觸 孔之基材放入一反應爐中；使該基材接觸選自包括氧、氮 、氟、碳氫氟化物（Hydrofluorocarbon)、氟代甲院（ fluoromethane)及碳氫基氨氣體族群之氣體混合物；及以去 離子水洗滌該基材。可在少於約攝氏1 0 0度之溫度下進 '行該製程。較氣體混合物包括氧、氮、及氟代甲烷； 氧、氮、及四氟院（tetra__romethane ):及氧、三氟 化胺（Trifluoroa^^)及四氟烷。最好使用一遙控之 電漿源反應爐。%
W 圖面簡述 爲更佳理解本發明，下面敘述一示範實施例，並一起 考慮其所附圖面，其中： 第1 A至1 G圖說明涉及製造積體電路裝置中通.路孔 及接觸孔之步驟；及 第2圖係本發明方法各步驟之方塊圖。 吾人將了解的是這些圖面用於說明本發明槪念之目-的 及非按比例製作。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ^8~- ---------:裝-- (請先閲讀背面之注意事項再Ϊ本頁) 訂 I.線— 〇 Λ7 __；____ B7 五、發明説明0 ) 主要元件對照表 10 12 14 16 18 20 26 28 30 31 32 發明之詳細敘述 經濟部中央標隼局員工消费合作社印製 基材 活化區 介電層 停止層 接觸孔 光阻蝕刻劑層 互連結構 保護層 · 介電層 光阻蝕刻劑層 通路孔 裝-- f·. (請先閱讀背面之注意事項再於爲本頁) 申請人已發現一種涉及用氣體電漿處理及低溫（少於 約攝氏1 0 0度）製造整合之接線柱式通路孔及接觸孔以 剝除光阻飩刻劑及去除殘留物之新方法。以這製程，該氣 體電漿既剝除該光阻蝕刻劑及去除殘留物，而亦改變該可 溶於水殘留物之成份，以致可使用一去離子水洗滌。如此 該製程避免反應淸洗溶劑之使用及其相關之問題，諸如潛 在之腐蝕、減少產量及可靠性、及健康與安全性顧慮。這 製程之低溫應用進一步避免有關自由離子污染之困難。-本； 發明之方法亦比先前之光阻飩刻劑剝除及殘留物去除方& 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐i ~ ~ '~~ 經濟部中央標準局負工消費合作社印製 _____B? 五、發明説明《) ~ 簡化，減少全部處理時間及增加效率及產量。 例如’參考第2圖，其顯示本發明方法各步驟之方塊 圖。如可由第2圖看出者，該方法具有很少步騾，這將大 幅減少製造設有互連層及通路孔及接觸孔之積體電路之處 理時間。第一步驟（第2圖方塊1 )係應用該領域中已知 之方法施行通路孔蝕刻（或接觸孔鈾刻），諸如用三氟甲 烷或六氟化硫之反應氣體混合物。所用之特別蝕刻法對本 發明並非極重要’及可形成諸如垂直或傾斜之任何型式通 路孔或接觸孔。該蝕刻將有可能涉及使用一欲剝除之光阻 蝕刻劑層。 下一步驟（第2圖方塊2 )將該基材放入一合適之反 ‘應爐或真空室中供施加氣體電漿。在此位置該基材可出現 爲第1 C或1 F圖之反映，亦即具有該蝕刻通路孔及接觸 孔（1 8，3 2 )及欲剝除之光阻蝕刻劑層（2 0，3 1 )。該反應爐可爲買自應用材料公司之一遙控電漿源（ R P S )反應爐，該反.應爐係該領域中已知者。亦可使用 其他在該領域中已知之反應爐，諸如下游或電漿反應爐； 高密度（感耦式）反應爐；三極真空管或其他雙功率型反 應爐；高功率電漿反應爐；及低功率R I E電漿反應爐。 該反應爐應在一給定之低晶圓偏壓模式中操作，該模式含 有約少於5 0電子伏特之最大能量供離子撞擊該晶圓表面 ，亦即該氣體電漿製程中之離子撞擊應盡可能溫和。吾人 已發現一具有1 0 0 0至1 5 0 0瓦應用功率之遙控電-漿 源反應爐運作良好。 (請先閱讀背面之注意事項再：^ί•本頁) -β 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） -10- Λ7 Λ7 經濟部中央標準局貝工消費合作社印製 五、發明説明6 ) 下一步驟（第2圖方塊3)產生一具有低基材偏壓之 電漿，以用選自包括氧、氮、氟、碳氫氟化物、氟代甲烷 及碳氫基氨氣體族群之氣體混合物撞擊該晶圓表面。較佳 之氣體混合物包括氧、氮、及氟代甲烷；氧、氮、及四氟 代甲烷；及氧、三氟化胺及四氟代甲烷。更特別地是使用 包括約（a )每分鐘1 5 0-2 5 0標準立方公分氧氣、 每分鐘1 0 0 — 2 0 0標準立方公分氮氣、及每分鐘 150 — 2.50標準立方公分氟代甲烷（CH3F);(b )每分鐘8 0 0 — 1 0 0 0標準立方公分氧氣、每分鐘 50 — 2 0 0標準立方公分氮氣、及每分鐘1 〇 — 3 0標 準立方公分四氟化碳；（c)每分鐘900 — 1 100標 .準立方公分氧氣、及每分鐘2 0 — 4 0標準立方公分三氟 化氮；及（d )每分鐘7 0 0-9 0 0標準立方公分氧氣 、每分鐘2 0 - 4 0標準立方公分三氟化氮、及每分鐘 1 5 0 — 2 5 0標準立方公分水蒸氣之氣體混合物有利地 蝕刻該晶圓。（單位、(：(：111”意指在標準壓力及溫度下之標準 立方公分/每分鐘。）最後混合物中之水蒸氣係一加至該 電漿之蒸氣及不會取代隨後之液態洗滌水。特別較佳的是 使用包括約（a)每分鐘200標準立方公分氧氣、每分 鐘1 5 0標準立方公分氮氣、及每分鐘2 0 0標準立方公 分氟代甲院；（b)每分鐘970標準立方公分氧氣、每 分鐘1 0 0標準立方公分·氮氣、及每分鐘2 0標準立方公 分四氟化碳；（c ：)每分鐘1 〇 〇 〇標準立方公分氧氣'、 及每分—3 0標準立方公分三氟化氮；及（d )每分鐘 ---------1丨_ .、-.1 ί (請先閲讀背面之注意事項再#¾本頁) 訂 線| 〇 本紙張尺度適用中國國家標準（CNS〉A4規格（2I0X：m公兹） -11 - Λ? Λ? 經濟部中央標準局員工消费合作社印製 五、發明説明$ ) 8 0 〇標準立方公分氧氣、每分鐘3 0標準立方公分三氟 化氮及每分鐘2.0 0標準立方公分水蒸氣之氣體混合物。 又該蒸氣不會取代該液態洗滌水。 該氣體在一相當高之剝除速率下剝除該光阻蝕刻劑 2 5，3 7，而其亦改變來自該蝕刻製程之殘留物成份， 使得該殘留物可溶於水及能以液態洗滌水淸潔。該製程最 好在少於約攝氏1 0 0度之溫度下施行，及更佳係在攝氏 4 0至9 0度之溫度下，而在約1 0至9 0秒時期間施行 該離子撞擊。 最後，施加一液態洗滌水（第2圖方塊4 )以去除現 在可溶於水之殘留物。 現在將參考範例敘述本發明。然而，應了解的是該範 例係供說明用及事實上未限制本發明。 - · ' 範例1 參考第1 E圖，使用一光刻法以在該介電層3 0之選 定區域上方設計一感光聚合物層3 1之圖案。遵循該技藝 中已知之方法，用一 R I E電漿處理及反應蝕刻劑可控制 地蝕刻該介電層3 0之暴露部以提供第1 F圖之結構 。第1F圖之結構係放入一應抖公司之RP S反應爐 。該反應爐壓力設定在1 . 5 0 ( Torr )。以包括氧、 氮、及碳氫氟化物氣體之氣體混^撞擊該基材及特別撞 擊該通路孔側壁，該氣體混合物之相對成份爲每分鐘 -2 0 0標準立方公分氧氣、每分鐘1 5 0標準立方公分氮 本紙張尺度通用中國國家標準（CNS ) A4規格（210X297公釐) -12- ' " ---------^裝-- (請先閱讀背面之注意事項再ri?本頁) 訂 -線| 〇 Λ7 Β7 五、發明説明纟〇 ) 氣、及每分鐘2 Ο 0標準立方公分氟代甲烷。該氣體混合 物係在1 0 0 0瓦下施加至該基材上方達約6 0秒。該溫 度隨時保持在或低於攝氏1 0 0度。這撞擊改變該殘留物 之成份以使其變成可溶於水。其次，該反應爐之壓力降低 至.7陶爾，及施加約每分鐘1 0 0 0標準立方公分氧氣 、每分鐘1 0 0標準立方公分氮氣、及每分鐘2 0標準立 方公分四氟化碳之氣體混合物。該混合物在1 4 0 0瓦下 施加至該基材上方達約3 0秒，而剝除該光阻蝕刻劑層（ 第1 F圖3 1 )。在這位置由該反應爐移去該基材及以去 離子水洗滌該基材係有利的。依諸如該光阻蝕刻劑之純度 狀態而定，吾人可能想要將該基材送回該反應爐以去除自 .由之鈉離子。在該情況下，該反應爐壓力改變至1 . 00 陶爾及在1 4 0 0瓦下施加包括約每分鐘2 3 0標準立方 公分氧氣、每分鐘6 0標準立方公分三氟化氮、及每分鐘 4 0 0標準立方公分四氟化碳之氣體混合物至該基材上方 達約1 5秒。 經濟部中央標隼局員工消費合作社印聚 -------裝II (請先閱讀背面之注意事項再^•本頁) -線| 〇 吾人將了解的是_在此所述實施例僅只供示範及熟練該 技藝之人士可作各種變化及修改，卻未偏離本發明之精神 及範圍。所有此等變化及修改係意欲涵括在所附申請專利 之範圍內。’ 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） -13-

Claims (1)

  1. 經濟部中央標準局員工消費合作社印製 六、申請專利範圍 1 · 一種光阻蝕刻劑剝除及鈾刻殘留物去除之方法， 包括下列步驟： (a )提供一具有光阻蝕刻劑層及蝕刻劑殘留物之 蝕刻基材； (b) 將該基材放入反應爐中用以在該基材表面上 方施加一氣體電漿； (c) 用一氣體混合物蝕刻該基材表面以去除該光 阻蝕刻劑勝及改變該蝕刻劑殘留物之成份，以致該殘留物 可溶於水，其中使該基材之溫度維持在少於約攝氏1 0 0 度下施行蝕刻；及 (-d )以去離子水洗滌該基材。 ' 2 .根據申請專利範圍第1項之方法，其中該氣體係 選自氧、氮、_氟、碳氫氟化物、氟代.甲烷及碳氫基氨氣體 之族群。 3 .根據申請專利範圍第1項之方法，其中該蝕刻基 材具有用於耦合一積體電路裝置各互連層之通路孔或接觸 孔。 4 .根據申請專利範圍第1項之方法，其中該反應爐 係在少於約1 5 0 0瓦下操作之下游或遙控電漿反應爐。 5 .根據申請專利範圍第1項之方法，其中蝕刻該基 材表面之步驟包括在少於約5 0電子伏特之能階下用離子 撞擊該基材表面。 6 ..根據申請專利範圍第1項之方法，其中該氣體混 合物包括選自（a)氧、氮、及氟代甲院；（b)氧、氮 本紙張尺度適用中國國家揉準（CNS ) A4規格（210X297公釐） (請先間讀背面之注意事項再填寫本頁)
    經濟部中央樣準局負工消費合作社印裝 -15- A8 B8 C8 D8 々、申請專利範圍 、及四氟代甲烷；（C )氧、三氟化胺、及四氟代甲烷； (d )氧及三氟化胺；及（e )氧、三氟化胺、及水蒸氣 族群之多數氣體混合物。 7 .根據申請專利範圍第1項之方法’其中該氣體混 合物係選自包括約（a )每分鐘1 5 0 — 2 5 0標準立方 公分氧氣、每分鐘1 0 〇 一 2 0 0標準立方公分氮氣、及 每分鐘150 — 250標準立方公分氟代甲烷；（b)每 分鐘8 0 CT_ 1 〇 〇 〇標準立方公分氧氣、每分鐘5 0 — 2 0 0標準立方公分氮氣、及每分鐘1 〇 一 3 0標準立方 公分四氟化碳；（c)每分_鐘900— 110 0標準立方 公分氧氣.、琴每分鐘2 0 _ 4 0標準立方公分三氟化氮； ‘及（d)每分鐘70 0 — 9 00標準立方公分氧氣、每分 鐘2 0 — 4 0骠準立方公分三氟化氮.、及每分鐘1 5 0 — .2 5 0標準立方公分水蒸氣之族群。 8 .根據申請專利範圍第7項之方法’其中蝕刻該基 材表面之步驟包括在1 4 0 0瓦及1 _ 0陶爾下施加約每 分鐘2 0 0標準立方公分氧氣、每分鐘1 5 0標準立方公 分氮氣、及每分鐘2 0 0標準立方公分氟代甲烷之氣體混 .合物至該基材上方達約6 0秒；在1 〇 〇 〇瓦及· 7陶爾 下施加約每分鐘1 0 0 0標準立方公分氧氣、每分鐘 1 0 0標準立方公分氮氣、及每分鐘2 0標準立.方公分四 氟化碳之氣體混合物至該基材上方達約3 0秒；及在 1 4 0 0瓦及1. 0 0陶爾下施加約每分鐘2 3 0標準'立 方公分氧氣、每分鐘6 0標準立方公分三氟化氮、及每分 本紙張尺度適用中國國家揉準（CNS ) A4规楼( 210X297公釐） ----------- (請先閎讀背面之注意事項再填寫本頁) 訂 tr ABCD 經濟部中央標準局貝工消費合作社印装 六、申請專利範圍 鐘4 0 0標準立方公分四氟化碳之氣體混合物至該基材上 方達約1 5秒。 9 · 一種去除光阻蝕刻劑及蝕刻殘留物之方法，係用 在於基材製造接線柱式通路孔及接觸孔以用於耦合積體電 路裝置各互連層之製程中，該製程係爲施加一光阻蝕刻劑 層至該基材表面之選定部份、留下暴露部份、及施加一反 應蝕刻劑以在該基材表面之暴露部份形成通路孔或接觸孔 之型式，該方法包括下列步驟： (a )將該基材放入反應爐中用以在該基材表面上 方施加一氣體電漿； (b )用一氣體混合物蝕刻該基材表面以去除該光 阻蝕刻劑層及改變該蝕刻劑殘留物之成份，以致該殘留物 可溶於水，其中使該基材之溫度維持在少於約攝氏1 0 0. 度下施行蝕刻；及 (c)以去離子水洗滌該基材。 1 0 .根據申請專利範圍第9項之方法，其中在該基 材中蝕刻垂直或傾斜之接線柱式通路孔。 1 1 .根據申請專利範圍第9項之方法，其中該氣體 係選自氧、氮、氟、碳氫氟化物、氟代甲烷及碳氫基氨氣 體之族群。 1 2 .根據申請專利範圍第9項之方法，其中該反應 爐係在少於約1 5 0 0瓦下操作之下游或遙控電漿反應爐 〇 1 3 .根據申請專利範圍第9項之方法，其中飩刻該 -----------^II (請先閎讀背面之注意事項再填寫本買) 訂 -tr 本紙張尺度逋用中國國家標準（CNS ) A4規格（210X297公釐） -16- A8 B8 C8 D8 々、申請專利範圍 基材之步驟包括在少於約5 0電子伏特之能階下用離子撞 擊該基材表面。 1 4 .根據申請專利範圍第9項之方法，其中該氣體 混合物包括選自（a)氧、氮、及氧代甲焼；（b)氧、 氮、及四氟代甲烷；（c )氧、三氟化胺' 及四氟代甲烷 ;(d )氧及三氟化胺；及（e )氧、三氟化胺、及水蒸 氣族群之多數氣體混合物。 經濟部中央標準局貝工消费合作社印装 1 5 .根據申請專利範圍第9項之方法，其中該氣體 混合物係選自包括約（a )每分鐘1 5 0_ 2 5 0標準立 方公分氧氣、每分鐘1 〇 〇 - 2 0 0標準立方公分氮氣、 及每分鐘.1 50 — 25〇標準立方公分氟代甲烷；（b) 每分鐘800—1000標準立方公分氧氣、每分鐘50 -2 0 0標準-立方公分氮氣及每分鐘.1 〇 - 3 0標準立方 公分四氟化碳；（c)每分鐘900 - 1100標準立方 公分氧氣、及每分鐘20 — 40標準立方公分三氟化氮； 及（d )每分鐘7 0 0 — 9 0 0標準立方公分氧氣、每分 鐘2 0 - 4 0標準立方公分三氟化氮及每分鐘1 5 0 -2 5 0標準立方公分水蒸氣之族群。 1 6 .根據申請專利範圍第9項之方法，其中蝕刻該 基材表面之步驟包括在1400瓦及1.0陶爾下施加約 每分鐘2 0 0標準立方公分氧氣、每分鐘1 5 0標準立方 公分氮氣、及每分鐘2 0 0標準立方公分氟代甲烷之.氣體 混合物至該基材上方·達約6 0秒；及在1 0 · 0 0瓦及._ 7 陶爾下施加約每分鐘1 0 0 0標準立方公分氧氣、每分鐘 -17 (請先鬩讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 396432 A8 B8 C8 D8 六、申請專利範圍 1 0 0標準立方公分氮氣、及每分鐘2 0標準立方公分四 氟化碳之氣體混合物至該基材上方達約3 0秒。 1 7 .根據申請專利範圍第1 6項之方法，另包括在 1 4 0 0瓦及1 . 0 0陶爾下施加約每分鐘2 3 0標準立 方公分氧氣、每分鐘6 0標準立方公分三氟化氮、及每分 鐘4 0 0標準立方公分四氟化碳之第三氣體混合物至該基 材上方達約1 5秒。 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 -18- 本紙張尺度逋用中國國家標準（CNS ) A4規格（21〇Χ25>7公釐）
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