JP2005525706A - 二酸化炭素中でマイクロエレクトロニクス基板をエッチング洗浄するための方法及び組成物 - Google Patents
二酸化炭素中でマイクロエレクトロニクス基板をエッチング洗浄するための方法及び組成物 Download PDFInfo
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- JP2005525706A JP2005525706A JP2004505286A JP2004505286A JP2005525706A JP 2005525706 A JP2005525706 A JP 2005525706A JP 2004505286 A JP2004505286 A JP 2004505286A JP 2004505286 A JP2004505286 A JP 2004505286A JP 2005525706 A JP2005525706 A JP 2005525706A
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- Prior art keywords
- substrate
- carbon dioxide
- cleaning
- composition
- lewis base
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- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 239000000758 substrate Substances 0.000 title claims abstract description 75
- 238000004140 cleaning Methods 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000001569 carbon dioxide Substances 0.000 title claims abstract description 45
- 229910002092 carbon dioxide Inorganic materials 0.000 title claims abstract description 45
- 238000004377 microelectronic Methods 0.000 title claims abstract description 8
- 239000000203 mixture Substances 0.000 title claims description 55
- 238000005530 etching Methods 0.000 title claims description 19
- 239000002879 Lewis base Substances 0.000 claims abstract description 29
- 150000007527 lewis bases Chemical class 0.000 claims abstract description 25
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000002904 solvent Substances 0.000 claims abstract description 9
- 239000007788 liquid Substances 0.000 claims description 31
- 229920002120 photoresistant polymer Polymers 0.000 claims description 23
- 239000004094 surface-active agent Substances 0.000 claims description 23
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 22
- 239000003989 dielectric material Substances 0.000 claims description 18
- 150000001412 amines Chemical class 0.000 claims description 15
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 12
- 239000006184 cosolvent Substances 0.000 claims description 11
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 11
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- 239000002184 metal Substances 0.000 claims description 8
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical group C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 claims description 6
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- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 claims description 4
- 238000011065 in-situ storage Methods 0.000 claims description 4
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 4
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- 239000000356 contaminant Substances 0.000 claims 1
- 230000007613 environmental effect Effects 0.000 claims 1
- -1 etching residue Substances 0.000 description 15
- 239000010410 layer Substances 0.000 description 15
- 239000000243 solution Substances 0.000 description 14
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- 150000002500 ions Chemical class 0.000 description 2
- 229920005610 lignin Chemical class 0.000 description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
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- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 2
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- 239000007800 oxidant agent Substances 0.000 description 2
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- 230000001052 transient effect Effects 0.000 description 2
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- GJFNRSDCSTVPCJ-UHFFFAOYSA-N 1,8-bis(dimethylamino)naphthalene Chemical compound C1=CC(N(C)C)=C2C(N(C)C)=CC=CC2=C1 GJFNRSDCSTVPCJ-UHFFFAOYSA-N 0.000 description 1
- ZQXCQTAELHSNAT-UHFFFAOYSA-N 1-chloro-3-nitro-5-(trifluoromethyl)benzene Chemical compound [O-][N+](=O)C1=CC(Cl)=CC(C(F)(F)F)=C1 ZQXCQTAELHSNAT-UHFFFAOYSA-N 0.000 description 1
- YSQGYEYXKXGAQA-UHFFFAOYSA-N 2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctyl prop-2-enoate Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)COC(=O)C=C YSQGYEYXKXGAQA-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical compound ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 1
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 1
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 1
- BCFOOQRXUXKJCL-UHFFFAOYSA-N 4-amino-4-oxo-2-sulfobutanoic acid Chemical class NC(=O)CC(C(O)=O)S(O)(=O)=O BCFOOQRXUXKJCL-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
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- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
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- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000004072 triols Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- GDJZZWYLFXAGFH-UHFFFAOYSA-M xylenesulfonate group Chemical group C1(C(C=CC=C1)C)(C)S(=O)(=O)[O-] GDJZZWYLFXAGFH-UHFFFAOYSA-M 0.000 description 1
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Abstract
Description
(a)アミンと半極性から極性の共溶媒との一相の溶液を二酸化炭素中に含む第1の洗浄液を提供するステップと、
(b)フッ化水素とルイス塩基の付加物を二酸化炭素中に含む第2の洗浄液を提供するステップと、
(c)基板を洗浄するのに十分な時間にわたって第2の洗浄液に基板を接触させることによって基板を洗浄するステップと、
(d)洗浄するステップ(c)の前、後、または前後の両方に、基板の洗浄を促進するのに十分な時間にわたって第1の洗浄液に基板を接触させることによって基板を洗浄するステップと
によって実施することができる。
一時的な層はフォトレジスト層または反射防止コーティング層であってもよい。加工残渣には、スチレン(stryenic)、アクリル、ノボラック、環状オレフィン無水マレイン酸樹脂類などの無機不純物または有機不純物、フッ素、塩素、臭素またはヨウ素および酸素のイオンによるエッチングおよび配分残渣、タンタル、チタン、銅、アルミニウムまたはタングステンを含有する金属不純物並びにシリカまたはアルミナ研磨剤および酸化剤、緩衝液、安定剤、界面活性剤、不働態化剤、錯化剤、腐食防止剤または他の薬剤などの他の一般的なスラリー添加剤を含有するスラリー残渣を挙げることができる。
本発明を実施するために使用される二酸化炭素組成物は、典型的には、以下を含む。
(a)典型的には、少なくとも40、50、60または70パーセントを保つための二酸化炭素、
(b)必要に応じて、望ましい場合には、0、0.01、0.1、0.5、1または2パーセント〜5または10パーセント以上の界面活性剤、
(c)必要に応じて、望ましい場合には、0、0.01、0.1、1または2〜30、40または50パーセント以上の有機共溶媒、
(d)必要に応じて、いくつかの実施態様においてはあまり好ましくないが、0.01または0.1〜2、5または10パーセントの水(および他の実施態様では、0パーセントの水)および
(e)0.0001%または0.0005%〜4%または5%のフッ化水素ルイス塩基付加物。
フォトレジストは、反応性イオンエッチングを使用して基板に誘電体層をパターン形成するためのマスクとして使用される。このプロセスに使用されるフォトレジストは、以降のステップにおいて除去される。基板を圧力容器に入れ、3,000psiおよび45℃において超臨界CO2を容器に添加する。超臨界CO2が容器に循環したら、ピリジンとHFからなる混合物を添加する。混合物の重量組成は99:1であり、添加した付加混合物の総濃度は全重量の5%である。溶媒混合物を1分間循環させる。この洗浄ステップの次に、30秒にわたって純粋な超臨界CO2によるすすぎを実施する。システムを減圧し、基板を取り出す。
一括有機物除去/フォトレジスト剥離の第1のステップはプラズマアッシングによって実施される。その結果生じたポリマーフォトレジストおよび灰分残渣は、以下のプロセス・ステップにおいて試験パターンから除去される。基板を圧力容器に入れる。2,500psiおよび55℃において超臨界CO2を容器に添加する。超臨界CO2が容器に循環したら、ジブチルアミンとメタノールを含む共溶媒混合物およびダブルテール型(double tailed)リン酸フルオロ界面活性剤(ビス1,1,2,2−テトラヒドロパーフルオロオクチル)リン酸ナトリウムなどのCO2親和性のある部分、およびCO2親和性のない部分を含有する界面活性剤を、基板表面に流動が均一に分布するように容器に添加する。重量による混合物の組成は、85:14:1であり、添加した付加物の総濃度は全重量の3%である。溶媒混合物を30秒間容器に循環させる。次いで、超臨界CO2によるすすぎにより、容器から溶媒混合物を除去する。次いで、ピリジンおよびHFからなる混合物を添加する。重量による混合物の組成は99.5:0.5であり、添加した付加物の総濃度は全重量の8%である。第2の溶媒混合物を10秒間基板に接触させ、次に純粋なCO2によるすすぎを実施する。システムを減圧し、基板を取り出す。
以下のプロセス・ステップを使用して、ポリマーフォトレジストおよびレジスト残渣を試験構造体のビアポスト反応性イオンエッチング(RIE)から除去する。基板を圧力容器に入れる。モルホリンとメタノールを超臨界CO2に加えたものを3,000psiおよび75℃において容器に添加する。重量による混合物の組成は20:80であり、添加した付加物の総濃度は2%である。流体混合物を2分間容器に循環させる。ピリジン、HFおよび高純度界面活性剤からなる第2の洗浄液を第1の洗浄液と交換する。重量による混合物の組成は93:6:1であり、添加した付加物の総濃度は全重量の1%である。第2の混合物を1分間基板に接触させる。最後に、容器に純粋なCO2を添加することによって、純粋な超臨界CO2すすぎを完了させる。システムを減圧し、基板を取り出す。
以下のプロセス・ステップを使用して、ポリマーフォトレジストおよびエッチング残渣を試験構造体のトレンチポストRIEから除去する。基板を圧力容器に入れ、超臨界CO2を2,400psiおよび60℃において容器に添加する。超臨界CO2が容器に循環したら、アミン(イソプロピルアミン)とメタノールからなる混合物を添加する。重量による混合物の組成は90:10であり、添加した付加物の総濃度は全重量の7%である。溶媒混合物を30秒間容器に循環させ、次いで第1の混合物を純粋なCO2によるすすぎによって置換してから、ピリジンとHFからなる第2の洗浄液を添加する。重量による混合物の組成は、99.99:0.01であり、添加した付加物の総濃度は全重量の5%である。混合物を20秒間容器に循環させ、次いで2%ピリジンからなる第3の洗浄液を容器に添加し、均一に分布させ、ウエハの表面に誘導した。次いで、全ての付加化学物質を除去するのに十分な時間にわたってシステムを純粋な超臨界CO2ですすぎ、システムを減圧する。
以下のプロセスを使用して、ラインのバックエンドの洗浄ステップ中にポスト−バリアブレークスルーであるデュアルダマシン構造体からエッチングおよび金属残渣を除去する。基板を容器に入れ、超臨界CO2を70℃において2,700psiの圧力まで容器に添加する。超臨界CO2が容器を循環したら、ピリジンとHFからなる混合物を添加する。重量による混合物の組成は95:5であり、添加した付加物の総濃度は全重量の1%である。溶媒混合物を20秒間循環させる。超臨界CO2すすぎにより溶媒混合物を容器から除去してから、銅キレート錯体と腐食防止剤の水溶液を、ポリ(1,1−ジヒドロパーフルオロオクチルアクリレート)−b−ポリ(エチレンオキシド)などの高純度CO2親和性b−親水性界面活性剤を含有する超臨界CO2エマルジョンに加えたものからなる第2の洗浄液を容器に添加する。エマルジョンを1分間基板に接触させる。次いで、システムを95%超臨界CO2/5%イソプロパノール、次に純粋なCO2ですすぎ、システムを減圧する。
以下のプロセス・ステップを使用して、ポリマーフォトレジストおよびエッチング残渣をデュアルダマシンのビアポスト反応性イオンエッチング(RIE)から除去する。基板を圧力容器に入れ、アミン(ヒドロキシルアミン)およびメタノールを超臨界CO2に加えたものを75℃において3,000psiまで容器に添加する。重量による混合物の組成は70:30であり、添加した付加物の総濃度は5%である。流体混合物を40秒間容器に循環させる。ルイス塩基(チオフェン)とHFからなる第2の溶液を、第1の溶液と交換する。重量による混合物の組成は93:7であり、添加した付加物の総濃度は全重量の2%である。第2の溶媒混合物を15秒間基板に接触させる。次いで、システムを純粋な超臨界CO2ですすぐ。液体CO2とパーフルオロオクタン酸などのCO2親和性の界面活性剤による最後の洗浄を実施して粒子を除去してから、純粋なCO2洗浄を実施する。システムを減圧し、基板を取り出す。
Claims (36)
- フッ化水素とルイス塩基との付加物を二酸化炭素溶媒中に含む洗浄液を提供するステップと、
基板を洗浄するのに十分な時間にわたって、前記洗浄液に前記基板を接触させることによって基板を洗浄するステップと
を含む、マイクロエレクトロニクス基板を洗浄する方法。 - 前記ルイス塩基のpKaが少なくとも5である、請求項1に記載の方法。
- 前記ルイス塩基がアミンである、請求項1に記載の方法。
- 前記ルイス塩基がピリジンまたはポリ(ビニルピリジン)またはトリエチルアミンである、請求項1に記載の方法。
- 前記洗浄液が、
0.001〜20重量パーセントのフッ化水素とルイス塩基との付加物と、
50〜99.999重量パーセントの二酸化炭素と
を含む、請求項1に記載の方法。 - 前記洗浄液が非水性である、請求項1に記載の方法。
- 前記二酸化炭素が液体二酸化炭素である、請求項1に記載の方法。
- 前記二酸化炭素が超臨界二酸化炭素である、請求項1に記載の方法。
- 前記洗浄するステップが、前記基板をすすぎ液で洗浄するステップの後または前に実施され、該すすぎ液が二酸化炭素を含む、請求項1に記載の方法。
- 前記すすぎ液が共溶媒をさらに含む、請求項9に記載の方法。
- 前記基板には、フォトレジスト層が形成されており、前記洗浄するステップが該基板からフォトレジストを除去する、請求項1に記載の方法。
- 前記基板には、エッチング残渣が付着しており、前記洗浄するステップが基板からエッチング残渣を除去する、請求項1に記載の方法。
- 前記基板には、灰分が付着しており、前記洗浄するステップが基板から灰分を除去する、請求項1に記載の方法。
- 前記基板には、金属残渣が付着しており、前記洗浄するステップが基板から金属残渣を除去する、請求項1に記載の方法。
- 前記基板は、酸化物層、フォトレジストまたはエッチング残渣が形成されている低k誘電体材料を含み、前記洗浄するステップが、前記低k誘電体材料から酸化物層、フォトレジストまたはエッチング残渣を除去する、請求項1に記載の方法。
- 前記基板がマイクロエレクトロメカニカル装置であり、前記洗浄するステップが、該基板から加工残渣および/または環境汚染物質を除去する、請求項1に記載の方法。
- 前記付加物がインサイチューにおいて形成される、請求項1に記載の方法。
- 前記付加物が、ルイス塩基を含有する二酸化炭素溶媒に無水フッ化水素を添加することによってインサイチューにおいて形成される、請求項1に記載の方法。
- 前記基板が、加工残渣が付着した無機酸化物を含有する表面を含み、前記付加物が、該無機酸化物を含有する基板を化学的にエッチングして、付着している加工残渣の除去を促進する、請求項1に記載の方法。
- 0.001〜20重量パーセントのフッ化水素とルイス塩基の付加物と、
50〜99.999重量パーセントの二酸化炭素と
を含む、流体組成物。 - 前記組成物が非水性である、請求項20に記載の組成物。
- 前記ルイス塩基のpKaが、少なくとも5である、請求項20に記載の組成物。
- 前記ルイス塩基がピリジンまたはポリ(ビニルピリジン)またはトリエチルアミンである、請求項20に記載の組成物。
- 0.1〜40重量パーセントの共溶媒をさらに含む、請求項20に記載の組成物。
- 0.1〜5重量パーセントの界面活性剤をさらに含む、請求項20に記載の組成物。
- 前記二酸化炭素が液体二酸化炭素である、請求項20に記載の組成物。
- 前記二酸化炭素が超臨界二酸化炭素である、請求項20に記載の組成物。
- 前記流体が0.150g/cc〜1.1g/ccの密度と、0〜80℃の温度を有する、請求項20に記載の組成物。
- (a)アミンと極性共溶媒の一相の溶液を二酸化炭素中に含む第1の洗浄液を提供するステップと、
(b)フッ化水素とルイス塩基の付加物を二酸化炭素中に含む第2の洗浄液を提供するステップと、
(c)基板を洗浄するのに十分な時間にわたって、前記第2の洗浄液に前記基板を接触させることによって基板を洗浄するステップと、
(d)洗浄するステップ(c)の前、後、または前後の両方に、基板の洗浄を促進するのに十分な時間にわたって、前記第1の洗浄液に前記基板を接触させることによって基板を洗浄するステップと
を含む、マイクロエレクトロニクス基板を洗浄する方法。 - 前記アミンが、モルホリン、アニリンまたはジブチルアミンである、請求項29に記載の方法。
- 前記極性共溶媒がC1〜C4アルコールである、請求項29に記載の方法。
- 前記ルイス塩基がピリジンまたはポリ(ビニルピリジン)またはトリエチルアミンである、請求項29に記載の方法。
- 前記洗浄液が、
0.001〜20重量パーセントのフッ化水素とルイス塩基の付加物と、
50〜99.999重量パーセントの二酸化炭素と
を含む、請求項29に記載の方法。 - 前記第1の洗浄液が非水性である、請求項29に記載の方法。
- 前記二酸化炭素が液体二酸化炭素である、請求項29に記載の方法。
- 前記二酸化炭素が超臨界二酸化炭素である、請求項29に記載の方法。
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US10/146,617 US6669785B2 (en) | 2002-05-15 | 2002-05-15 | Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide |
PCT/US2003/014735 WO2003097550A1 (en) | 2002-05-15 | 2003-05-13 | Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide |
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US (2) | US6669785B2 (ja) |
EP (1) | EP1503968A1 (ja) |
JP (1) | JP2005525706A (ja) |
KR (1) | KR20050005400A (ja) |
CN (1) | CN1653012A (ja) |
AU (1) | AU2003237814A1 (ja) |
TW (1) | TW200306346A (ja) |
WO (1) | WO2003097550A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015038229A (ja) * | 2007-03-16 | 2015-02-26 | 日立マクセル株式会社 | 金属膜の形成方法並びに無電解メッキ液 |
JP2021061399A (ja) * | 2019-10-07 | 2021-04-15 | セメス カンパニー,リミテッド | 基板処理装置及び方法 |
Families Citing this family (89)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030051680A (ko) * | 2000-09-26 | 2003-06-25 | 더 유니버시티 오브 노쓰 캐롤라이나 엣 채플 힐 | 이산화탄소에 대해 사용되는 인산 플루오로계면활성제 |
US20030064149A1 (en) * | 2001-09-28 | 2003-04-03 | Miller Seth A. | Methods of applying coatings to micro electromechanical devices using a carbon dioxide carrier solvent |
US20040016450A1 (en) * | 2002-01-25 | 2004-01-29 | Bertram Ronald Thomas | Method for reducing the formation of contaminants during supercritical carbon dioxide processes |
US20050227187A1 (en) * | 2002-03-04 | 2005-10-13 | Supercritical Systems Inc. | Ionic fluid in supercritical fluid for semiconductor processing |
WO2003077032A1 (en) * | 2002-03-04 | 2003-09-18 | Supercritical Systems Inc. | Method of passivating of low dielectric materials in wafer processing |
US7387868B2 (en) * | 2002-03-04 | 2008-06-17 | Tokyo Electron Limited | Treatment of a dielectric layer using supercritical CO2 |
US6677286B1 (en) * | 2002-07-10 | 2004-01-13 | Air Products And Chemicals, Inc. | Compositions for removing etching residue and use thereof |
US7018937B2 (en) * | 2002-08-29 | 2006-03-28 | Micron Technology, Inc. | Compositions for removal of processing byproducts and method for using same |
US7282099B2 (en) * | 2002-09-24 | 2007-10-16 | Air Products And Chemicals, Inc. | Dense phase processing fluids for microelectronic component manufacture |
US20060019850A1 (en) * | 2002-10-31 | 2006-01-26 | Korzenski Michael B | Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations |
US7485611B2 (en) * | 2002-10-31 | 2009-02-03 | Advanced Technology Materials, Inc. | Supercritical fluid-based cleaning compositions and methods |
US7223352B2 (en) * | 2002-10-31 | 2007-05-29 | Advanced Technology Materials, Inc. | Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal |
US6943139B2 (en) * | 2002-10-31 | 2005-09-13 | Advanced Technology Materials, Inc. | Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations |
US6989358B2 (en) * | 2002-10-31 | 2006-01-24 | Advanced Technology Materials, Inc. | Supercritical carbon dioxide/chemical formulation for removal of photoresists |
JP2004158534A (ja) * | 2002-11-05 | 2004-06-03 | Kobe Steel Ltd | 微細構造体の洗浄方法 |
US7419768B2 (en) * | 2002-11-18 | 2008-09-02 | Micron Technology, Inc. | Methods of fabricating integrated circuitry |
US7101443B2 (en) * | 2003-01-29 | 2006-09-05 | Intel Corporation | Supercritical carbon dioxide-based cleaning of metal lines |
US20040266184A1 (en) * | 2003-06-30 | 2004-12-30 | Ramachandrarao Vijayakumar S | Post-deposition modification of interlayer dielectrics |
US20050022850A1 (en) * | 2003-07-29 | 2005-02-03 | Supercritical Systems, Inc. | Regulation of flow of processing chemistry only into a processing chamber |
WO2005054405A1 (en) * | 2003-12-01 | 2005-06-16 | Advanced Technology Materials, Inc., | Removal of mems sacrificial layers using supercritical fluid/chemical formulations |
US20050118832A1 (en) * | 2003-12-01 | 2005-06-02 | Korzenski Michael B. | Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations |
US7553803B2 (en) * | 2004-03-01 | 2009-06-30 | Advanced Technology Materials, Inc. | Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions |
US20050227482A1 (en) * | 2004-03-24 | 2005-10-13 | Korzenski Michael B | Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers |
US20050261150A1 (en) * | 2004-05-21 | 2005-11-24 | Battelle Memorial Institute, A Part Interest | Reactive fluid systems for removing deposition materials and methods for using same |
KR100720866B1 (ko) | 2004-06-15 | 2007-06-11 | 부경대학교 산학협력단 | 이산화탄소에 적용 가능한 신규 아민 계면활성제, 이의 제조방법 및 이를 활용하여 이산화탄소 유체에 의한 각종 전자 기판의 세정 효율을 향상시키는 방법 |
US7250374B2 (en) * | 2004-06-30 | 2007-07-31 | Tokyo Electron Limited | System and method for processing a substrate using supercritical carbon dioxide processing |
KR100641506B1 (ko) * | 2004-09-17 | 2006-11-01 | 동부일렉트로닉스 주식회사 | 반도체 소자 세정 방법 |
US20060102282A1 (en) * | 2004-11-15 | 2006-05-18 | Supercritical Systems, Inc. | Method and apparatus for selectively filtering residue from a processing chamber |
EP1824945A4 (en) * | 2004-11-19 | 2008-08-06 | Honeywell Int Inc | CHEMICALS FOR SELECTIVE REMOVAL FOR SEMICONDUCTOR APPLICATIONS, METHODS OF MANUFACTURE AND IDOINE USES |
US7473517B2 (en) * | 2004-12-29 | 2009-01-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Supercritical developing for a lithographic process |
WO2006081534A1 (en) * | 2005-01-28 | 2006-08-03 | Micell Technologies, Inc. | Compositions and methods for image development of conventional chemically amplified photoresists |
US20060186088A1 (en) * | 2005-02-23 | 2006-08-24 | Gunilla Jacobson | Etching and cleaning BPSG material using supercritical processing |
US20060185693A1 (en) * | 2005-02-23 | 2006-08-24 | Richard Brown | Cleaning step in supercritical processing |
WO2006091312A2 (en) * | 2005-02-23 | 2006-08-31 | Supercritical Systems Inc. | Improved cleaning step in supercritical processing |
US7550075B2 (en) * | 2005-03-23 | 2009-06-23 | Tokyo Electron Ltd. | Removal of contaminants from a fluid |
US7767145B2 (en) * | 2005-03-28 | 2010-08-03 | Toyko Electron Limited | High pressure fourier transform infrared cell |
US20060226117A1 (en) * | 2005-03-29 | 2006-10-12 | Bertram Ronald T | Phase change based heating element system and method |
US7442636B2 (en) * | 2005-03-30 | 2008-10-28 | Tokyo Electron Limited | Method of inhibiting copper corrosion during supercritical CO2 cleaning |
US20060223899A1 (en) * | 2005-03-30 | 2006-10-05 | Hillman Joseph T | Removal of porogens and porogen residues using supercritical CO2 |
US20060219268A1 (en) * | 2005-03-30 | 2006-10-05 | Gunilla Jacobson | Neutralization of systemic poisoning in wafer processing |
US7399708B2 (en) * | 2005-03-30 | 2008-07-15 | Tokyo Electron Limited | Method of treating a composite spin-on glass/anti-reflective material prior to cleaning |
US20060225769A1 (en) * | 2005-03-30 | 2006-10-12 | Gentaro Goshi | Isothermal control of a process chamber |
WO2006113621A2 (en) | 2005-04-15 | 2006-10-26 | Advanced Technology Materials, Inc. | Formulations for cleaning ion-implanted photoresist layers from microelectronic devices |
US7789971B2 (en) | 2005-05-13 | 2010-09-07 | Tokyo Electron Limited | Treatment of substrate using functionalizing agent in supercritical carbon dioxide |
US20070000519A1 (en) * | 2005-06-30 | 2007-01-04 | Gunilla Jacobson | Removal of residues for low-k dielectric materials in wafer processing |
WO2007011708A2 (en) | 2005-07-15 | 2007-01-25 | Micell Technologies, Inc. | Stent with polymer coating containing amorphous rapamycin |
AU2006270221B2 (en) | 2005-07-15 | 2012-01-19 | Micell Technologies, Inc. | Polymer coatings containing drug powder of controlled morphology |
KR100698102B1 (ko) * | 2005-10-05 | 2007-03-23 | 동부일렉트로닉스 주식회사 | 반도체 소자의 금속배선 형성방법 |
KR101444468B1 (ko) * | 2005-10-05 | 2014-10-30 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 에칭후 잔류물을 제거하기 위한 산화성 수성 세정제 |
KR101152139B1 (ko) * | 2005-12-06 | 2012-06-15 | 삼성전자주식회사 | 표시 장치용 세정제 및 이를 사용하는 박막 트랜지스터표시판의 제조 방법 |
WO2007081876A2 (en) | 2006-01-04 | 2007-07-19 | Liquidia Technologies, Inc. | Nanostructured surfaces for biomedical/biomaterial applications and processes thereof |
CA2996768C (en) | 2006-04-26 | 2020-12-08 | Micell Technologies, Inc. | Coatings containing multiple drugs |
US7807219B2 (en) * | 2006-06-27 | 2010-10-05 | Lam Research Corporation | Repairing and restoring strength of etch-damaged low-k dielectric materials |
WO2008042909A2 (en) | 2006-10-02 | 2008-04-10 | Micell Technologies Inc. | Surgical sutures having increased strength |
EP2081694B1 (en) | 2006-10-23 | 2020-05-13 | Micell Technologies, Inc. | Holder for electrically charging a substrate during coating |
US11426494B2 (en) | 2007-01-08 | 2022-08-30 | MT Acquisition Holdings LLC | Stents having biodegradable layers |
JP5603598B2 (ja) | 2007-01-08 | 2014-10-08 | ミセル テクノロジーズ、インコーポレイテッド | 生物分解層を有するステント |
US20080280230A1 (en) * | 2007-05-10 | 2008-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photolithography process including a chemical rinse |
CA2688314C (en) | 2007-05-25 | 2013-12-03 | Micell Technologies, Inc. | Polymer films for medical device coating |
EP2271294B1 (en) | 2008-04-17 | 2018-03-28 | Micell Technologies, Inc. | Stents having bioabsorbable layers |
JP2011528275A (ja) | 2008-07-17 | 2011-11-17 | ミセル テクノロジーズ,インク. | 薬物送達医療デバイス |
US8961701B2 (en) * | 2008-09-24 | 2015-02-24 | Lam Research Corporation | Method and system of drying a microelectronic topography |
US8153533B2 (en) * | 2008-09-24 | 2012-04-10 | Lam Research | Methods and systems for preventing feature collapse during microelectronic topography fabrication |
US8834913B2 (en) | 2008-12-26 | 2014-09-16 | Battelle Memorial Institute | Medical implants and methods of making medical implants |
US20100184301A1 (en) * | 2009-01-20 | 2010-07-22 | Lam Research | Methods for Preventing Precipitation of Etch Byproducts During an Etch Process and/or Subsequent Rinse Process |
US9620410B1 (en) | 2009-01-20 | 2017-04-11 | Lam Research Corporation | Methods for preventing precipitation of etch byproducts during an etch process and/or subsequent rinse process |
CA2756386C (en) | 2009-03-23 | 2019-01-15 | Micell Technologies, Inc. | Drug delivery medical device |
CA2757276C (en) | 2009-04-01 | 2017-06-06 | Micell Technologies, Inc. | Coated stents |
EP2419058B1 (en) | 2009-04-17 | 2018-02-28 | Micell Technologies, Inc. | Stents having controlled elution |
US8304179B2 (en) * | 2009-05-11 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for manufacturing a semiconductor device using a modified photosensitive layer |
EP2453834A4 (en) | 2009-07-16 | 2014-04-16 | Micell Technologies Inc | MEDICAL DEVICE DISPENSING MEDICINE |
US11369498B2 (en) | 2010-02-02 | 2022-06-28 | MT Acquisition Holdings LLC | Stent and stent delivery system with improved deliverability |
US8795762B2 (en) | 2010-03-26 | 2014-08-05 | Battelle Memorial Institute | System and method for enhanced electrostatic deposition and surface coatings |
US10232092B2 (en) | 2010-04-22 | 2019-03-19 | Micell Technologies, Inc. | Stents and other devices having extracellular matrix coating |
JP5183811B2 (ja) * | 2010-06-29 | 2013-04-17 | 安瀚視特股▲ふん▼有限公司 | 液晶表示装置用ガラス基板の製造方法 |
EP2593039B1 (en) | 2010-07-16 | 2022-11-30 | Micell Technologies, Inc. | Drug delivery medical device |
CA2810842C (en) | 2010-09-09 | 2018-06-26 | Micell Technologies, Inc. | Macrolide dosage forms |
US20120177742A1 (en) | 2010-12-30 | 2012-07-12 | Micell Technologies, Inc. | Nanoparticle and surface-modified particulate coatings, coated balloons, and methods therefore |
CN102115915B (zh) * | 2010-12-31 | 2012-08-22 | 百力达太阳能股份有限公司 | 一种单晶硅制绒添加剂以及单晶硅制绒工艺 |
US10464100B2 (en) | 2011-05-31 | 2019-11-05 | Micell Technologies, Inc. | System and process for formation of a time-released, drug-eluting transferable coating |
CA2841360A1 (en) | 2011-07-15 | 2013-01-24 | Micell Technologies, Inc. | Drug delivery medical device |
US10188772B2 (en) | 2011-10-18 | 2019-01-29 | Micell Technologies, Inc. | Drug delivery medical device |
CA2852260C (en) | 2011-10-18 | 2020-09-22 | Micell Technologies, Inc. | Drug delivery medical device |
JP6330024B2 (ja) | 2013-03-12 | 2018-05-23 | マイセル・テクノロジーズ,インコーポレイテッド | 生体吸収性バイオメディカルインプラント |
AU2014265460B2 (en) | 2013-05-15 | 2018-10-18 | Micell Technologies, Inc. | Bioabsorbable biomedical implants |
EP3550943A4 (en) | 2016-12-02 | 2020-07-22 | ULVAC, Inc. | PROCESS FOR PROCESSING A CONNECTION PANEL |
US11004675B2 (en) * | 2017-09-14 | 2021-05-11 | Semes Co., Ltd. | Substrate cleaning composition, substrate treating method, and substrate treating apparatus |
KR102152911B1 (ko) * | 2017-09-14 | 2020-09-08 | 세메스 주식회사 | 기판 세정 조성물, 기판 처리 방법 및 기판 처리 장치 |
US20220044924A1 (en) * | 2020-08-05 | 2022-02-10 | Changxin Memory Technologies, Inc. | Semiconductor structure processing method and manufacturing method |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5783082A (en) * | 1995-11-03 | 1998-07-21 | University Of North Carolina | Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants |
KR19980018262A (ko) | 1996-08-01 | 1998-06-05 | 윌리엄 비.켐플러 | 입출력포트 및 램 메모리 어드레스 지정기술 |
US5908510A (en) | 1996-10-16 | 1999-06-01 | International Business Machines Corporation | Residue removal by supercritical fluids |
US6149828A (en) | 1997-05-05 | 2000-11-21 | Micron Technology, Inc. | Supercritical etching compositions and method of using same |
US6500605B1 (en) * | 1997-05-27 | 2002-12-31 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
US6277753B1 (en) * | 1998-09-28 | 2001-08-21 | Supercritical Systems Inc. | Removal of CMP residue from semiconductors using supercritical carbon dioxide process |
KR100559017B1 (ko) | 2000-08-14 | 2006-03-10 | 동경 엘렉트론 주식회사 | 초임계 이산화탄소를 이용하는 반도체로부터의포토레지스트 및 포토레지스트 잔사의 제거법 |
JP2002237481A (ja) * | 2001-02-09 | 2002-08-23 | Kobe Steel Ltd | 微細構造体の洗浄方法 |
US6890855B2 (en) * | 2001-06-27 | 2005-05-10 | International Business Machines Corporation | Process of removing residue material from a precision surface |
US6763840B2 (en) * | 2001-09-14 | 2004-07-20 | Micell Technologies, Inc. | Method and apparatus for cleaning substrates using liquid carbon dioxide |
US7326673B2 (en) * | 2001-12-31 | 2008-02-05 | Advanced Technology Materials, Inc. | Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates |
US20030196679A1 (en) * | 2002-04-18 | 2003-10-23 | International Business Machines Corporation | Process and apparatus for contacting a precision surface with liquid or supercritical carbon dioxide |
-
2002
- 2002-05-15 US US10/146,617 patent/US6669785B2/en not_active Expired - Fee Related
-
2003
- 2003-03-28 TW TW092107105A patent/TW200306346A/zh unknown
- 2003-05-13 JP JP2004505286A patent/JP2005525706A/ja active Pending
- 2003-05-13 EP EP03736577A patent/EP1503968A1/en not_active Withdrawn
- 2003-05-13 KR KR10-2004-7006169A patent/KR20050005400A/ko not_active Application Discontinuation
- 2003-05-13 CN CNA03810914XA patent/CN1653012A/zh active Pending
- 2003-05-13 AU AU2003237814A patent/AU2003237814A1/en not_active Abandoned
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015038229A (ja) * | 2007-03-16 | 2015-02-26 | 日立マクセル株式会社 | 金属膜の形成方法並びに無電解メッキ液 |
JP2021061399A (ja) * | 2019-10-07 | 2021-04-15 | セメス カンパニー,リミテッド | 基板処理装置及び方法 |
JP7287930B2 (ja) | 2019-10-07 | 2023-06-06 | セメス カンパニー,リミテッド | 基板処理装置及び方法 |
US11942337B2 (en) | 2019-10-07 | 2024-03-26 | Semes Co., Ltd. | Apparatus and method for treating substrate |
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AU2003237814A1 (en) | 2003-12-02 |
WO2003097550A1 (en) | 2003-11-27 |
EP1503968A1 (en) | 2005-02-09 |
US20030216269A1 (en) | 2003-11-20 |
KR20050005400A (ko) | 2005-01-13 |
TW200306346A (en) | 2003-11-16 |
CN1653012A (zh) | 2005-08-10 |
US6669785B2 (en) | 2003-12-30 |
US20040045588A1 (en) | 2004-03-11 |
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