TW374270B - Circuit and method of limiting leakage current in a memory circuit - Google Patents

Circuit and method of limiting leakage current in a memory circuit

Info

Publication number
TW374270B
TW374270B TW087107825A TW87107825A TW374270B TW 374270 B TW374270 B TW 374270B TW 087107825 A TW087107825 A TW 087107825A TW 87107825 A TW87107825 A TW 87107825A TW 374270 B TW374270 B TW 374270B
Authority
TW
Taiwan
Prior art keywords
circuit
semiconductor well
leakage current
memory circuit
limiting leakage
Prior art date
Application number
TW087107825A
Other languages
English (en)
Inventor
James S Caravella
David F Mietus
Jeremy W Moore
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Application granted granted Critical
Publication of TW374270B publication Critical patent/TW374270B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
TW087107825A 1997-05-21 1998-05-20 Circuit and method of limiting leakage current in a memory circuit TW374270B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/859,897 US5898633A (en) 1997-05-21 1997-05-21 Circuit and method of limiting leakage current in a memory circuit

Publications (1)

Publication Number Publication Date
TW374270B true TW374270B (en) 1999-11-11

Family

ID=25331997

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087107825A TW374270B (en) 1997-05-21 1998-05-20 Circuit and method of limiting leakage current in a memory circuit

Country Status (5)

Country Link
US (1) US5898633A (zh)
JP (2) JP4880103B2 (zh)
KR (1) KR100548973B1 (zh)
SG (1) SG65067A1 (zh)
TW (1) TW374270B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990088517A (ko) 1998-05-22 1999-12-27 마 유에 예일 비휘발성메모리셀구조및비휘발성메모리셀을작동시키는방법
US6859408B2 (en) * 2002-08-29 2005-02-22 Micron Technology, Inc. Current limiting antifuse programming path
AT500263B1 (de) * 2004-03-15 2007-04-15 T I P S Messtechnik Gmbh Verfahren und schaltung zum schutz von prüfkontakten bei der hochstrom-messung von halbleiter-bauelementen
KR100649834B1 (ko) 2004-10-22 2006-11-28 주식회사 하이닉스반도체 반도체 메모리 소자의 누설 전류 제어 장치

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324982A (en) * 1985-09-25 1994-06-28 Hitachi, Ltd. Semiconductor memory device having bipolar transistor and structure to avoid soft error
JPS63305545A (ja) * 1987-06-05 1988-12-13 Hitachi Ltd 半導体集積回路装置
JPH04229655A (ja) * 1990-06-26 1992-08-19 Mitsubishi Electric Corp 不揮発性半導体記憶装置における消去方式
JPH04348564A (ja) * 1991-05-27 1992-12-03 Matsushita Electron Corp Ｃｍｏｓ基板電位発生回路
JPH05205488A (ja) * 1992-01-27 1993-08-13 Fujitsu Ltd 不揮発性半導体記憶装置
JPH06237164A (ja) * 1993-02-10 1994-08-23 Hitachi Ltd 電力低減機構を持つ半導体集積回路とそれを用いた電子装置
JPH0621443A (ja) * 1992-04-17 1994-01-28 Nec Corp 半導体集積回路
JPH06216346A (ja) * 1992-11-30 1994-08-05 Sony Corp 半導体装置
JP3373632B2 (ja) * 1993-03-31 2003-02-04 株式会社東芝 不揮発性半導体記憶装置
JP3520532B2 (ja) * 1993-08-06 2004-04-19 ソニー株式会社 Ｎａｎｄ型不揮発性メモリの駆動方法
JPH0863985A (ja) * 1994-08-29 1996-03-08 Mitsubishi Denki Semiconductor Software Kk 不揮発性半導体記憶装置
JPH08191954A (ja) * 1995-01-13 1996-07-30 Nippon Denki Ido Tsushin Kk ゲーム・システム
TW306001B (zh) * 1995-02-08 1997-05-21 Matsushita Electric Ind Co Ltd
JP3641511B2 (ja) * 1995-06-16 2005-04-20 株式会社ルネサステクノロジ 半導体装置
JP3204602B2 (ja) * 1995-07-13 2001-09-04 株式会社東芝 不揮発性半導体記憶装置
JP3606397B2 (ja) * 1995-07-13 2005-01-05 富士通株式会社 携帯電話機
US5640002A (en) * 1995-08-15 1997-06-17 Ruppert; Jonathan Paul Portable RF ID tag and barcode reader
JP3602216B2 (ja) * 1995-09-19 2004-12-15 富士通株式会社 半導体装置
KR19980064091A (ko) * 1996-12-13 1998-10-07 윌리엄비.켐플러 신뢰성과 동작성이 개선된 채널 핫 전자 프로그램 방식 메모리디바이스

Also Published As

Publication number Publication date
SG65067A1 (en) 1999-05-25
KR19980087201A (ko) 1998-12-05
JP4880103B2 (ja) 2012-02-22
JP2010113797A (ja) 2010-05-20
US5898633A (en) 1999-04-27
JP5114470B2 (ja) 2013-01-09
JPH10335583A (ja) 1998-12-18
KR100548973B1 (ko) 2006-04-17

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