SG65067A1 - Circuit and method of limiting leakage current in memory circuit - Google Patents

Circuit and method of limiting leakage current in memory circuit

Info

Publication number
SG65067A1
SG65067A1 SG1998001013A SG1998001013A SG65067A1 SG 65067 A1 SG65067 A1 SG 65067A1 SG 1998001013 A SG1998001013 A SG 1998001013A SG 1998001013 A SG1998001013 A SG 1998001013A SG 65067 A1 SG65067 A1 SG 65067A1
Authority
SG
Singapore
Prior art keywords
circuit
leakage current
limiting leakage
memory circuit
memory
Prior art date
Application number
SG1998001013A
Other languages
English (en)
Inventor
James S Caravella
David F Mietus
Jeremy W Moore
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of SG65067A1 publication Critical patent/SG65067A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Power Sources (AREA)
SG1998001013A 1997-05-21 1998-05-08 Circuit and method of limiting leakage current in memory circuit SG65067A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/859,897 US5898633A (en) 1997-05-21 1997-05-21 Circuit and method of limiting leakage current in a memory circuit

Publications (1)

Publication Number Publication Date
SG65067A1 true SG65067A1 (en) 1999-05-25

Family

ID=25331997

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1998001013A SG65067A1 (en) 1997-05-21 1998-05-08 Circuit and method of limiting leakage current in memory circuit

Country Status (5)

Country Link
US (1) US5898633A (zh)
JP (2) JP4880103B2 (zh)
KR (1) KR100548973B1 (zh)
SG (1) SG65067A1 (zh)
TW (1) TW374270B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990088517A (ko) 1998-05-22 1999-12-27 마 유에 예일 비휘발성메모리셀구조및비휘발성메모리셀을작동시키는방법
US6859408B2 (en) * 2002-08-29 2005-02-22 Micron Technology, Inc. Current limiting antifuse programming path
AT500263B1 (de) * 2004-03-15 2007-04-15 T I P S Messtechnik Gmbh Verfahren und schaltung zum schutz von prüfkontakten bei der hochstrom-messung von halbleiter-bauelementen
KR100649834B1 (ko) 2004-10-22 2006-11-28 주식회사 하이닉스반도체 반도체 메모리 소자의 누설 전류 제어 장치

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324982A (en) * 1985-09-25 1994-06-28 Hitachi, Ltd. Semiconductor memory device having bipolar transistor and structure to avoid soft error
JPS63305545A (ja) * 1987-06-05 1988-12-13 Hitachi Ltd 半導体集積回路装置
JPH04229655A (ja) * 1990-06-26 1992-08-19 Mitsubishi Electric Corp 不揮発性半導体記憶装置における消去方式
JPH04348564A (ja) * 1991-05-27 1992-12-03 Matsushita Electron Corp Ｃｍｏｓ基板電位発生回路
JPH05205488A (ja) * 1992-01-27 1993-08-13 Fujitsu Ltd 不揮発性半導体記憶装置
JPH06237164A (ja) * 1993-02-10 1994-08-23 Hitachi Ltd 電力低減機構を持つ半導体集積回路とそれを用いた電子装置
JPH0621443A (ja) * 1992-04-17 1994-01-28 Nec Corp 半導体集積回路
JPH06216346A (ja) * 1992-11-30 1994-08-05 Sony Corp 半導体装置
JP3373632B2 (ja) * 1993-03-31 2003-02-04 株式会社東芝 不揮発性半導体記憶装置
JP3520532B2 (ja) * 1993-08-06 2004-04-19 ソニー株式会社 Ｎａｎｄ型不揮発性メモリの駆動方法
JPH0863985A (ja) * 1994-08-29 1996-03-08 Mitsubishi Denki Semiconductor Software Kk 不揮発性半導体記憶装置
JPH08191954A (ja) * 1995-01-13 1996-07-30 Nippon Denki Ido Tsushin Kk ゲーム・システム
TW306001B (zh) * 1995-02-08 1997-05-21 Matsushita Electric Ind Co Ltd
JP3641511B2 (ja) * 1995-06-16 2005-04-20 株式会社ルネサステクノロジ 半導体装置
JP3606397B2 (ja) * 1995-07-13 2005-01-05 富士通株式会社 携帯電話機
JP3204602B2 (ja) * 1995-07-13 2001-09-04 株式会社東芝 不揮発性半導体記憶装置
US5640002A (en) * 1995-08-15 1997-06-17 Ruppert; Jonathan Paul Portable RF ID tag and barcode reader
JP3602216B2 (ja) * 1995-09-19 2004-12-15 富士通株式会社 半導体装置
DE69731170T2 (de) * 1996-12-13 2006-02-02 Texas Instruments Inc., Dallas Verbesserungen an oder in Bezug auf Halbleiteranordnungen

Also Published As

Publication number Publication date
TW374270B (en) 1999-11-11
JP5114470B2 (ja) 2013-01-09
KR100548973B1 (ko) 2006-04-17
US5898633A (en) 1999-04-27
JP2010113797A (ja) 2010-05-20
KR19980087201A (ko) 1998-12-05
JP4880103B2 (ja) 2012-02-22
JPH10335583A (ja) 1998-12-18

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